BFR96TS

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.
Observe precautions for handling.

Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.

Features
D High power gain
D Low noise figure
D High transition frequency

94 9308 13623

1
BFR96TS Marking: BFR96TS
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 15 V
Emitter-base voltage VEBO 2.5 V
Collector current IC 100 mA
Total power dissipation Tamb ≤ 45 °C Ptot 700 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg –65 to +150 °C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 RthJA 150 K/W
plated with 35mm Cu

Document Number 85037 www.vishay.com

Rev. 5, 22-Jan-01 1 (9)
BFR96TS
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 ICES 100 mA
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10 mA
Collector-emitter breakdown voltage IC = 5 mA, IB = 0 V(BR)CEO 15 V
DC forward current transfer ratio VCE = 10 V, IC = 70 mA hFE 25 75 150

Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified

Parameter Test Conditions Symbol Min Typ Max Unit

Transition frequency VCE = 10 V, IC = 70 mA, f = 500 MHz fT 5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.84 pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.4 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 3.5 pF
Noise figure VCE = 10 V, IC = 70 mA, ZS = 50 ,W F 3.3 dB
f = 500 MHz
VCE = 10 V, IC = 70 mA, ZS = 50 ,W F 4.0 dB
f = 800 MHz
Power gain VCE = 10 V, IC = 70 mA, ZS = 50 ,W Gpe 11.5 dB
ZL = ZLopt, f = 800 MHz
Linear output voltage – two VCE = 10 V, IC = 70 mA, dIM = 60 dB, V1 = V2 500 mV
tone intermodulation test f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50W
Third order intercept point VCE = 10 V, IC = 70 mA, f = 800 MHz IP3 37 dBm

www.vishay.com Document Number 85037

2 (9) Rev. 5, 22-Jan-01
 BFR96TS
Vishay Semiconductors
Common Emitter S–Parameters
Z0 = 50 W, Tamb = 25_C, unless otherwise specified

S11 S21 S12 S22

LIN LIN LIN LIN
VCE/V IC/mA f/MHz ANG ANG ANG ANG
MAG MAG MAG MAG
deg deg deg deg
100 0.691 –68.6 11.94 137.4 0.044 59.4 0.807 –28.82
300 0.552 –135.5 6.04 100.7 0.071 46.5 0.521 –45.0
500 0.518 –162.6 3.85 84.4 0.087 49.4 0.453 –51.6
800 0.499 173.8 2.47 68.1 0.114 55.7 0.444 –63.0
5 1000 0.488 162.5 1.99 59.7 0.136 58.7 0.458 –71.3
1200 0.477 152.5 1.68 52.3 0.161 60.2 0.478 –79.3
1500 0.459 139.2 1.37 43.1 0.203 60.5 0.515 –91.2
1800 0.446 125.8 1.15 34.7 0.247 59.0 0.553 –102.4
2000 0.427 118.9 1.05 29.9 0.272 57.6 0.577 –109.4
100 0.538 –92.3 17.08 126.6 0.035 57.6 0.672 –38.9
300 0.465 –152.7 7.31 94.9 0.060 57.1 0.389 –51.7
500 0.452 –173.7 4.51 81.7 0.085 61.7 0.341 –57.7
800 0.444 167.6 2.87 67.7 0.125 64.1 0.343 –69.2
5 10 1000 0.436 157.3 2.31 60.3 0.153 64.0 0.359 –77.5
1200 0.429 148.6 1.96 53.5 0.182 63.0 0.379 –85.2
1500 0.413 136.4 1.59 44.7 0.227 60.3 0.415 –96.2
1800 0.403 124.0 1.35 36.5 0.271 57.0 0.451 –106.4
2000 0.387 116.8 1.24 31.8 0.294 54.8 0.474 –112.6
100 0.387 –134.8 22.79 112.9 0.024 65.1 0.467 –52.1
300 0.401 –172.7 8.44 89.5 0.055 71.8 0.255 –60.2
500 0.400 174.0 5.13 79.0 0.088 72.5 0.234 –67.0
800 0.401 160.7 3.25 67.1 0.137 69.9 0.249 –79.7
30 1000 0.392 152.5 2.61 60.5 0.170 67.7 0.269 –87.9
1200 0.390 144.5 2.21 54.2 0.202 64.8 0.291 –95.2
1500 0.375 133.8 1.81 46.1 0.249 60.2 0.326 –105.1
1800 0.365 121.9 1.54 38.3 0.293 55.6 0.362 –113.7
2000 0.351 115.4 1.41 33.6 0.315 52.7 0.383 –119.0

Document Number 85037 www.vishay.com

Rev. 5, 22-Jan-01 3 (9)
BFR96TS
Vishay Semiconductors

S11 S21 S12 S22

LIN LIN LIN LIN
VCE/V IC/mA f/MHz ANG ANG ANG ANG
MAG MAG MAG MAG
deg deg deg deg
100 0.370 –150.0 23.94 109.0 0.022 69.6 0.399 –55.7
300 0.395 –177.8 8.62 87.9 0.055 75.4 0.221 –62.3
500 0.396 171.3 5.23 78.1 0.090 74.8 0.208 –69.7
800 0.395 159.1 3.30 66.7 0.140 71.1 0.229 –82.8
50 1000 0.389 150.9 2.66 60.2 0.173 68.2 0.250 –90.8
1200 0.386 143.3 2.25 54.0 0.206 65.1 0.273 –98.0
1500 0.373 133.2 1.83 45.8 0.253 60.1 0.308 –107.5
1800 0.363 121.7 1.56 38.2 0.297 55.4 0.343 –115.7
2000 0.348 115.4 1.43 33.5 0.319 52.5 0.364 –120.8
5
100 0.374 –157.4 24.17 107.0 0.021 73.0 0.364 –56.8
300 0.397 179.7 8.60 87.1 0.055 77.4 0.206 –62.5
500 0.399 170.0 5.19 77.7 0.090 75.7 0.197 –70.3
800 0.398 158.4 3.29 66.2 0.141 71.6 0.221 –83.6
70 1000 0.394 150.3 2.65 59.8 0.175 68.6 0.243 –91.7
1200 0.389 143.3 2.24 53.5 0.207 65.3 0.267 –98.8
1500 0.378 132.8 1.82 45.4 0.255 60.3 0.303 –108.2
1800 0.368 121.7 1.55 37.7 0.299 55.4 0.338 –116.3
2000 0.355 114.9 1.42 32.9 0.321 52.5 0.359 –121.3
100 0.710 –62.3 12.15 140.0 0.036 61.8 0.844 –23.2
300 0.542 –129.2 6.46 103.2 0.061 48.7 0.591 –36.7
500 0.497 –157.8 4.14 86.6 0.075 51.4 0.528 –42.4
800 0.479 177.3 2.66 70.2 0.099 58.2 0.519 –52.7
5 1000 0.464 165.3 2.14 61.8 0.118 61.7 0.533 –60.5
1200 0.454 155.0 1.81 54.5 0.141 63.7 0.550 –68.3
1500 0.438 141.0 1.45 45.0 0.178 64.5 0.585 –79.8
1800 0.427 127.6 1.23 36.5 0.219 63.7 0.623 –91.0
2000 0.410 119.7 1.11 31.8 0.244 62.4 0.646 –98.1
10
100 0.544 –83.4 17.99 129.3 0.029 60.1 0.722 –31.2
300 0.436 –146.3 7.94 96.9 0.052 58.8 0.463 –40.3
500 0.417 –169.2 4.94 83.4 0.073 63.5 0.419 –45.2
800 0.410 170.8 3.14 69.6 0.109 66.4 0.419 –55.8
10 1000 0.397 160.5 2.52 62.1 0.134 66.8 0.433 –63.6
1200 0.394 151.1 2.13 55.5 0.160 66.1 0.450 –71.3
1500 0.384 139.1 1.73 46.6 0.201 63.8 0.483 –82.5
1800 0.372 125.9 1.46 38.1 0.241 61.1 0.520 –93.0
2000 0.357 118.6 1.33 33.4 0.264 59.0 0.542 –99.6

www.vishay.com Document Number 85037

4 (9) Rev. 5, 22-Jan-01
 BFR96TS
Vishay Semiconductors

S11 S21 S12 S22

LIN LIN LIN LIN
VCE/V IC/mA f/MHz ANG ANG ANG ANG
MAG MAG MAG MAG
deg deg deg deg
100 0.356 –122.3 24.66 115.3 0.021 66.0 0.525 –40.2
300 0.351 –167.1 9.31 90.0 0.048 72.5 0.333 –42.5
500 0.349 178.4 5.65 80.5 0.077 73.6 0.313 –48.0
800 0.351 164.4 3.59 68.7 0.121 71.6 0.323 –60.0
30 1000 0.348 155.5 2.88 62.2 0.150 69.7 0.340 –68.3
1200 0.343 147.4 2.44 56.0 0.179 67.3 0.358 –76.2
1500 0.334 136.6 1.97 47.6 0.222 63.2 0.390 –87.2
1800 0.328 124.7 1.68 39.6 0.262 59.1 0.426 –97.0
2000 0.312 117.3 1.53 35.0 0.283 56.5 0.447 –103.1
100 0.325 –137.8 26.14 110.8 0.019 69.8 0.457 –41.9
300 0.337 –172.8 9.52 89.1 0.049 75.9 0.299 –42.2
500 0.339 174.8 5.78 79.3 0.079 75.7 0.286 –48.2
800 0.343 162.2 3.65 68.1 0.123 72.6 0.300 –61.0
10 50 1000 0.337 154.3 2.94 61.8 0.153 70.1 0.318 –69.7
1200 0.334 146.6 2.48 55.6 0.183 67.4 0.338 –77.6
1500 0.327 136.1 2.02 47.5 0.226 63.0 0.370 –88.5
1800 0.322 124.1 1.70 39.6 0.267 58.7 0.406 –98.2
2000 0.311 118.2 1.55 34.6 0.288 55.9 0.428 –104.1
100 0.323 –145.1 26.39 108.4 0.018 72.0 0.424 –41.8
300 0.339 –175.6 9.46 88.1 0.049 76.9 0.287 –41.1
500 0.339 174.1 5.74 78.8 0.079 76.3 0.278 –47.7
800 0.344 162.0 3.62 67.5 0.124 72.8 0.295 –61.0
70 1000 0.341 153.8 2.92 61.1 0.154 70.4 0.313 –69.7
1200 0.340 146.2 2.46 55.0 0.184 67.6 0.333 –77.6
1500 0.333 135.6 1.99 46.8 0.227 63.0 0.367 –88.7
1800 0.326 14.2 1.68 39.0 0.268 58.6 0.403 –98.4
2000 0.318 117.8 1.54 34.0 0.289 55.9 0.425 –104.4

Document Number 85037 www.vishay.com

Rev. 5, 22-Jan-01 5 (9)
BFR96TS
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C unless otherwise specified)
800 2.0

C cb – Collector Base Capacitance ( pF )

P tot – Total Power Dissipation ( mW )

700
1.6
600

500 1.2
400

300 0.8

200
0.4
100
f=1MHz
0 0
0 25 50 75 100 125 150 0 4 8 12 16 20
16780 Tamb – Ambient Temperature ( °C ) 13598 VCB – Collector Base Voltage ( V )

Figure 1. Total Power Dissipation vs. Figure 3. Collector Base Capacitance vs.
Ambient Temperature Collector Base Voltage

7000 5
f T – Transition Frequency ( MHz )

6000
4
F – Noise Figure ( dB )

5000 f=800MHz
4000 3

3000 2
2000
f=500MHz
VCE=10V 1 VCE=10V
1000 f=500MHz ZS=50 W
0 0
0 20 40 60 80 100 0 10 20 30 40 50 60 70
13597 IC – Collector Current ( mA ) 13599 IC – Collector Current ( mA )

Figure 2. Transition Frequency vs. Collector Current Figure 4. Noise Figure vs. Collector Current

www.vishay.com Document Number 85037

6 (9) Rev. 5, 22-Jan-01
 BFR96TS
Vishay Semiconductors
VCE = 10 V, IC = 70 mA , Z0 = 50 W
S11 S12
j 90°
120° 60°
j0.5 j2

150° 2.0 GHz 30°

j0.2 j5
2.0 GHz 1.0

ÁÁÁ ÁÁÁÁÁÁ 1.0

ÁÁÁ ÁÁÁÁÁÁ 1
0 0.2 0.5 1 2 5 180° 0.1 0.2 0.4 0°

0.1

–j0.2 –j5
–150° –30°

–j0.5 –j2
–120° –60°
13 542 –j 13 543 –90°

Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient

S21 S22
90° j
120° 60°
j0.5 j2

150° 1.0 30°

j0.2 j5

ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁ
0.3

1
180°
2.0 GHz
20 40 0° 0
ÁÁÁ
ÁÁÁ
ÁÁÁÁÁÁ
0.2 0.5 1

1.0
2
0.3
0.1
5

–j0.2 2.0 GHz –j5

–150° –30°

–j0.5 –j2
–120° –60°
13 544 –90° 95 545 –j

Figure 6. Forward transmission coefficient Figure 8. Output reflection coefficient

Document Number 85037 www.vishay.com

Rev. 5, 22-Jan-01 7 (9)
BFR96TS
Vishay Semiconductors
Dimensions of BFR96TS in mm

96 12244

www.vishay.com Document Number 85037

8 (9) Rev. 5, 22-Jan-01
 BFR96TS
Vishay Semiconductors
Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 85037 www.vishay.com

Rev. 5, 22-Jan-01 9 (9)