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    Auger Recombination PDF

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    The document discusses various types of radiative and non-radiative recombination processes in semiconductors. It describes exciton recombination, which involves the recombination of an electron-hole pair bound by Coulomb forces. It also discusses band-to-band recombination, Auger recombination, and Shockley-Read-Hall transitions. Auger recombination is a non-radiative process involving three charge carriers where the excess energy is transferred as kinetic energy to the third carrier. It is more dominant in heavily doped and narrow bandgap semiconductors.

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    Auger Recombination PDF

    Uploaded by

    viper
    69 views14 pages
    The document discusses various types of radiative and non-radiative recombination processes in semiconductors. It describes exciton recombination, which involves the recombination of an electron-hole pair bound by Coulomb forces. It also discusses band-to-band recombination, Auger recombination, and Shockley-Read-Hall transitions. Auger recombination is a non-radiative process involving three charge carriers where the excess energy is transferred as kinetic energy to the third carrier. It is more dominant in heavily doped and narrow bandgap semiconductors.

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    The document discusses various types of radiative and non-radiative recombination processes in semiconductors. It describes exciton recombination, which involves the recombination of an electron-hole pair bound by Coulomb forces. It also discusses band-to-band recombination, Auger recombination, and Shockley-Read-Hall transitions. Auger recombination is a non-radiative process involving three charge carriers where the excess energy is transferred as kinetic energy to the third carrier. It is more dominant in heavily doped and narrow bandgap semiconductors.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    69 views14 pages

    Auger Recombination PDF

    Uploaded by

    viper
    The document discusses various types of radiative and non-radiative recombination processes in semiconductors. It describes exciton recombination, which involves the recombination of an electron-hole pair bound by Coulomb forces. It also discusses band-to-band recombination, Auger recombination, and Shockley-Read-Hall transitions. Auger recombination is a non-radiative process involving three charge carriers where the excess energy is transferred as kinetic energy to the third carrier. It is more dominant in heavily doped and narrow bandgap semiconductors.

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    Radiation in Semiconductors

    Relation between absorption and emission spectra

    At thermal equilibrium, the rate of spontaneous photon


    emission 𝑅𝑠𝑝 𝝂 in the interval d𝝂 is given by
    𝟐𝝎𝒌𝒂
    𝜶=
    𝒄
    Near-Band gap radiative transition

    Exciton recombination:

    An exciton is a bound state of an electron and an


    electron hole which are attracted to each other by the
    electrostatic Coulomb force.

    It is an electrically neutral quasiparticle that exists in


    insulators, semiconductors and in some liquids.
     An exciton can form when a photon is absorbed by a
    semiconductor.

     This excites an electron from the valence band into the


    conduction band. In turn, this leaves behind a positively
    charged electron hole (an abstraction for the location from
    which an electron was moved).

     The electron in the conduction band is then effectively


    attracted to this localized hole by the repulsive Coulomb
    forces from large numbers of electrons surrounding the hole
    and excited electron.

     This attraction provides a stabilizing energy balance.

     Consequently, the exciton has slightly less energy than the


    unbound electron and hole
    The recombination of the exciton pair (electron –hole pair)
    results in a narrow and sharp peak in the emission spectra

    Probability of exciton recombination is low in in-direct bandgap semiconductors


    Band to Band recombination
    If the temperature of the sample is high enough such that 𝑘 𝑇 > 𝜖𝑔

    If there are sufficient free carriers in the semiconductor producing


    local field to dissociate the exciton

    Most of the photo generated carriers exist as separate holes and


    electrons in the band

    Most of these carriers live mean life and combine radiatively


    Auger recombination
    •Occurs in heavily doped semiconductors
    •Non radiative recombination process
    •Three charge carriers are involved
    •Excess energy by recombination is transferred
    by Columbic collision as KE of a third free carrier
    •The third carrier raised in energy deep in to the
    respective band
    •The carrier finally thermalize back to the
    bottom of the band
    • The total recombination rate of the
    spontaneous emission is

    Auger recombination
    Shockely-Read-Hall
    transitions (recombination at Spontaneous radiative recombination
    defects and traps)

    The carrier life time of Auger recombination,

    C Auger recombination coefficient

    Auger recombination is very effective bulk recombination


    process at high carrier densities
    • The energy taken by the third particle is

    The efficiency of Auger recombination depends on the


    concentration of excess charge carriers

    •More dominant in narrow bandgap semiconductors


    •Rate increases with increases with increase in T and
    decrease with band gap energies
    •Plays important role in junction lasers
    • C conduction band
    • HH heavy hole band
    • LH light hole band
    • SO Split-off bands

    • CCCH- is dominant in n-type materials


    • CHHL &CHHS in P-type materials
    • CHHS process more dominant in low band gap
    materials

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