1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Single Channel IGBT Gate Driver IC

1EDI05I12AF
1EDI20I12AF
1EDI40I12AF
1EDI60I12AF

Data Sheet
Rev. 2.0, 2014-11-10

Industrial Power Control

Edition 2014-11-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Revision History
Page or Item Subjects (major changes since previous revision)
Rev. 2.0, 2014-11-10
all pages Final DS, completion of parameters and editorial changes
Rev. 1.01, 2014-10-14
all pages completion of parameters

Trademarks of Infineon Technologies AG

AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.

Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26

Data Sheet 3 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Table of Contents

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.2 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3 Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.1 Undervoltage Lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.2 Active Shut-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3.3 Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4 Non-Inverting and Inverting Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.5 Driver Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2 Operating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.1 Voltage Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.2 Logic Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.3 Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.4 Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.5 Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.6 Active Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Timing Diagramms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8.1 Reference Layout for Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8.2 Printed Circuit Board Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Data Sheet 4 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

List of Figures

Figure 1 Typical Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 2 Block Diagram 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF and 1EDI60I12AF . . . . . . . . . . . . . . . 9
Figure 3 PG-DSO-8-51 (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4 Application Example Bipolar Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5 Application Example Unipolar Supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6 Propagation Delay, Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7 Typical Switching Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 8 UVLO Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 9 PG-DSO-8-51 (Plastic (Green) Dual Small Outline Package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 10 Reference Layout for Thermal Data (JEDEC 1s0p, 100mm², Copper thickness 35 μm) . . . . . . . . 21

Data Sheet 5 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

List of Tables

Table 1 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 2 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 3 Operating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 4 Voltage Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5 Logic Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6 Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 7 Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 8 Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 9 Active Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Data Sheet 6 Rev. 2.0, 2014-11-10

1EDI EiceDRIVER™ Compact
Single Channel IGBT Gate Driver IC Separate output
variant for IGBT

1 Overview

Main Features
• Single channel isolated IGBT Driver
• Input to output isolation voltage up to 1200 V
• For high voltage power IGBTs
• Up to 10 A typical peak current at rail-to-rail outputs
• Separate source and sink outputs

Product Highlights
• Galvanically isolated Coreless Transformer Driver
• Wide input voltage operating range
• Suitable for operation at high ambient temperature
ED-
Compact
Typical Application
• AC and Brushless DC Motor Drives
• High Voltage DC/DC-Converter and DC/AC-Inverter
• Induction Heating Resonant Application
• UPS-Systems
• Welding
• Solar

Description
The 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF, and 1EDI60I12AF are galvanically isolated single channel IGBT
driver in a PG-DSO-8-51 package that provide minimum output currents up to 6 A at separated output pins.
The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to
support even 3.3 V microcontroller.
Data transfer across the isolation barrier is realized by the Coreless Transformer Technology.
Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and active
shutdown.

Product Name Gate Drive Current (min) Package

1EDI05I12AF ±0.5 A PG-DSO-8-51
1EDI20I12AF ±2.0 A PG-DSO-8-51
1EDI40I12AF ±4.0 A PG-DSO-8-51
1EDI60I12AF ±6.0 A PG-DSO-8-51

Data Sheet 7 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Overview

VCC1 VCC2,H

OUT+
IN+
EiceDRIVERTM 1EDIxxI12AF
IN-

OUT-

GND1 GND2,H

Control

VCC1 VCC2,L

OUT+
IN+
EiceDRIVERTM 1EDIxxI12AF
IN-

OUT-

GND1 GND2,L

Figure 1 Typical Application

Data Sheet 8 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Block Diagram

2 Block Diagram

VCC1 1 UVLO UVLO 5 VCC2

VCC2

input
IN+ 2 filter
& &
active TX RX 6 OUT+
GND1 filter
VCC1 Shoot
through
input protection
IN- 3 filter 7 OUT-

GND1 4 8 GND2

Figure 2 Block Diagram 1EDI05I12AF, 1EDI20I12AF, 1EDI40I12AF and 1EDI60I12AF

Data Sheet 9 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Pin Configuration and Functionality

3 Pin Configuration and Functionality

3.1 Pin Configuration

Table 1 Pin Configuration

Pin No. Name Function
1 VCC1 Positive Logic Supply
2 IN+ Non-Inverted Driver Input (active high)
3 IN- Inverted Driver Input (active low)
4 GND1 Logic Ground
5 VCC2 Positive Power Supply Output Side
6 OUT+ Driver Source Output
7 OUT- Driver Sink Output
8 GND2 Power Ground

1 VCC1 GND2 8

2 IN+ OUT- 7

3 IN- OUT+ 6

4 GND1 VCC2 5

Figure 3 PG-DSO-8-51 (top view)

3.2 Pin Functionality

VCC1
Logic Input supply voltage of 3.3 V up to 15 V wide operating range.

IN+ Non Inverting Driver Input

IN+ non-inverted control signal for driver output if IN- is set to low. (Output sourcing active at IN+ = high and
IN- = low)
Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN+. An internal
weak pull-down-resistor favors off-state.

Data Sheet 10 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Pin Configuration and Functionality

IN- Inverting Driver Input

IN- inverted control signal for driver output if IN+ is set to high. (Output sourcing active at IN- = low and IN+ = high)
Due to internal filtering a minimum pulse width is defined to ensure robustness against noise at IN-. An internal
weak pull-up-resistor favors off-state.

GND1
Ground connection of input circuit.

VCC2
Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply
pin.

OUT+ Driver Source Output

Driver source output pin to turn on external IGBT. During on-state the driving output is switched to VCC2.
Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event.
During turn off the OUT+ terminal is able to sink approx. 100 mA.

OUT- Driver Sink Output

Driver sink output pin to turn off external IGBT. During off-state the driving output is switched to GND2. Switching
of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output voltage at a low
level.

GND2 Reference Ground

Reference ground of the output driving circuit.
In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the
negative supply voltage.

Data Sheet 11 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Functional Description

4 Functional Description

4.1 Introduction
The 1EDI EiceDRIVER™ Compact is a general purpose IGBT gate driver. Basic control and protection features
support fast and easy design of highly reliable systems.
The integrated galvanic isolation between control input logic and driving output stage grants additional safety. Its
wide input voltage supply range support the direct connection of various signal sources like DSPs and
microcontrollers.
The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass diode
and enhance dV/dt control.

+5V VCC1 VCC2

+15V
100n 1µ
10R
SGND OUT+
GND1
3R3
IN IN+ OUT-

IN- GND2 1µ 0V
-8V

Figure 4 Application Example Bipolar Supply

4.2 Supply
The driver can operate over a wide supply voltage range, either unipolar or bipolar.
With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage
of -8V at GND2 relative to the emitter of the IGBT as seen in Figure 4. Negative supply can help to prevent a
dynamic turn on due to the additional charge which is generated from IGBT’s input capacitance.
For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this
case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on (see
Figure 5).

+5V VCC1 VCC2

+15V
100n 1µ
10R
SGND OUT+
GND1
3R3
IN IN+ OUT-

IN- GND2

Figure 5 Application Example Unipolar Supply

Data Sheet 12 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Functional Description

4.3 Protection Features

4.3.1 Undervoltage Lockout (UVLO)

To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output
independently. Operation starts only after both VCC levels have increased beyond the respective VUVLOH levels
(see also Figure 8).
If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip
before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches the
power-up voltage VUVLOH1 again.
If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and signals
from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again.
Note: VVCC2 is always referred to GND2 and does not differentiate between unipolar or bipolar supply.

4.3.2 Active Shut-Down

The Active Shut-Down feature ensures a safe IGBT off-state in case the output chip is not connected to the power
supply or an under voltage lockout is in effect. The IGBT gate is clamped at OUT- to GND2.

4.3.3 Short Circuit Clamping

During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller capacitance. An
additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage.
A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher currents are
expected or tighter clamping is desired external Schottky diodes may be added.

4.4 Non-Inverting and Inverting Inputs

There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while
IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high, please see Figure 7. A
minimum input pulse width is defined to filter occasional glitches.

4.5 Driver Outputs

The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of
gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to
the low internal voltage drop, switching behaviour of the IGBT is predominantly governed by the gate resistor.
Furthermore, it reduces the power to be dissipated by the driver.

Data Sheet 13 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Electrical Parameters

5 Electrical Parameters

5.1 Absolute Maximum Ratings

Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of
the integrated circuit. Unless otherwise noted all parameters refer to GND1.

Table 2 Absolute Maximum Ratings

Parameter Symbol Values Unit Note /
Min. Max. Test Condition
1)
Power supply output side VVCC2 -0.3 40 V
Gate driver output VOUT VGND2-0.3 VVCC2+0.3 V –
Positive power supply input side VVCC1 -0.3 18.0 V –
Logic input voltages (IN+,IN-) VLogicIN -0.3 18.0 V –
Input to output isolation voltage (GND2) VISO -1200 1200 V
Junction temperature TJ -40 150 °C –
Storage temperature TS -55 150 °C –
2)
Power dissipation (Input side) PD, IN – 25 mW @TA = 25°C
2)
Power dissipation (Output side) PD, OUT – 400 mW @TA = 25°C
2)
Thermal resistance (Input side) RTHJA,IN – 145 K/W @TA = 85°C
2)
Thermal resistance (Output side) RTHJA,OUT – 165 K/W @TA = 85°C
ESD capability VESD,HBM – 2 kV Human Body
Model3)
1) With respect to GND2.
2) See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly with layout and
heat dissipation of components in close proximity.
3) According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).

Data Sheet 14 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Electrical Parameters

5.2 Operating Parameters

Note: Within the operating range the IC operates as described in the functional description. Unless otherwise
noted all parameters refer to GND1.

Table 3 Operating Parameters

Parameter Symbol Values Unit Note /
Min. Max. Test Condition
1)
Power supply output side VVCC2 13 35 V
Power supply input side VVCC1 3.1 17 V –
Logic input voltages (IN+,IN-) VLogicIN -0.3 17 V –
2) 3)
Switching frequency fsw – 1.0 MHz
Ambient temperature TA -40 125 °C –
3)
Thermal coefficient, junction-top Ψth,jt – 4.8 K/W @TA = 85°C
3)
Common mode transient immunity |dVISO/dt| – 100 kV/μs @ 1000 V
(CMTI)
1) With respect to GND2.
2) do not exceed max. power dissipation
3) Parameter is not subject to production test - verified by design/characterization

5.3 Electrical Characteristics

Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures
given below. Typical values represent the median values at TA = 25°C. Unless otherwise noted all voltages
are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 5 to 7).

5.3.1 Voltage Supply

Table 4 Voltage Supply

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition

UVLO threshold input VUVLOH1 – 2.85 3.1 V –

chip VUVLOL1 2.55 2.75 – V –
UVLO hysteresis input VHYS1 90 100 – mV –
chip (VUVLOH1 - VUVLOL1)
UVLO threshold output VUVLOH2 – 12.0 12.7 V –
chip (IGBT supply) VUVLOL2 10.5 11.1 – V –
UVLO hysteresis output VHYS2 700 850 – mV –
chip (VUVLOH2 - VUVLOL2)

Data Sheet 15 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Electrical Parameters

Table 4 Voltage Supply (cont’d)

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition

Quiescent current input IQ1 – 0.65 1.0 mA VVCC1 = 5 V

chip IN+ = High,
IN- = Low
=>OUT = High
Quiescent current output IQ2 – 1.2 2.0 mA VVCC2 = 15 V
chip IN+ = High,
IN- = Low
=>OUT = High

5.3.2 Logic Input

Note: Unless stated otherwise VCC1 = 5.0V

Table 5 Logic Input

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition

IN+,IN- low input voltage VIN+L,VIN-L – – 30 % of VCC1

IN+,IN- high input voltage VIN+H,VIN-H 70 – – % of VCC1
IN+,IN- low input voltage VIN+L,VIN-L – – 1.5 V –
IN+,IN- high input voltage VIN+H,VIN-H 3.5 – – V –
IN- input current IIN- – 70 200 μA VIN- = GND1
IN+ input current IIN+, – 70 200 μA VIN+ = VCC1

5.3.3 Gate Driver

Table 6 Gate Driver

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition
1)
High level output peak IOUT+,PEAK – – A
current (source) IN+ = High,
1EDI05I12AF 0.5 1.3 IN- = Low,
1EDI20I12AF 2.0 4.0 VVCC2 = 15 V
1EDI40I12AF 4.0 7.5
1EDI60I12AF 6.0 10.0
1)
Low level output peak IOUT-,PEAK – – A
current (sink) IN+ = Low,
1EDI05I12AF 0.5 0.9 IN- = Low,
1EDI20I12AF 2.0 3.5 VVCC2 = 15 V
1EDI40I12AF 4.0 6.8
1EDI60I12AF 6.0 9.4
1) voltage across the device V(VCC2 - OUT+) or V(OUT- - GND2) < VVCC2.

Data Sheet 16 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Electrical Parameters

5.3.4 Short Circuit Clamping

Table 7 Short Circuit Clamping

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition

Clamping voltage (OUT+) VCLPout – 0.9 1.3 V IN+ = High,

(VOUT - VVCC2) IN- = Low,
OUT = High
IOUT = 500 mA
pulse test,
tCLPmax = 10 μs)

5.3.5 Dynamic Characteristics

Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V.

Table 8 Dynamic Characteristics

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition

Input IN to output propa- TPDON 270 300 330 ns CLOAD = 100 pF

gation delay ON VIN+ = 50%,
Input IN to output propa- TPDOFF 270 300 330 ns VOUT=50% @ 25°C
gation delay OFF
Input IN to output propa- TPDISTO -30 5 40 ns
gation delay distortion
(TPDOFF - TPDON)
Input pulse suppression TMININ+, 230 240 – ns –
IN+, IN- TMININ-
1)
Input IN to output TPDONt – – 14 ns CLOAD = 100 pF
propagation delay ON VIN+ = 50%,
variation due to temp VOUT=50%
1)
Input IN to output TPDOFFt – – 14 ns CLOAD = 100 pF
propagation delay OFF VIN+ = 50%,
variation due to temp VOUT=50%
1)
Input IN to output TPDISTOt – – 8 ns CLOAD = 100 pF
propagation delay VIN+ = 50%,
distortion variation due to VOUT=50%
temp (TPDOFF-TPDON)
Rise time TRISE 5 10 20 ns CLOAD = 1 nF
VL 20%, VH 80%
Fall time TFALL 4 9 19 ns CLOAD = 1 nF
VL 20%, VH 80%
1) The parameter is not subject to production test - verified by design/characterization

Data Sheet 17 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Electrical Parameters

5.3.6 Active Shut Down

Table 9 Active Shut Down

Parameter Symbol Values Unit Note /
Min. Typ. Max. Test Condition
1)
Active shut down voltage V ACTSD – 2.2 2.5 V IOUT-/IOUT-,PEAK=0.1,
VCC2 open
1) With reference to GND2

Data Sheet 18 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Timing Diagramms

6 Timing Diagramms

50 %
IN+
80 %
50 %
20 %
OUT
TRISE TFALL
TPDON TPDOFF

Figure 6 Propagation Delay, Rise and Fall Time

IN+

IN‐

OUT

Figure 7 Typical Switching Behavior

IN+
VUVLOH 1
VCC1 VUVLOL 1

V UVLOH 2
V UVLOL 2
VCC2

OUT
Figure 8 UVLO Behavior

Data Sheet 19 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Package Outlines

7 Package Outlines

Figure 9 PG-DSO-8-51 (Plastic (Green) Dual Small Outline Package)

Data Sheet 20 Rev. 2.0, 2014-11-10

 1EDI EiceDRIVER™ Compact
Separate output variant for IGBT

Application Notes

8 Application Notes

8.1 Reference Layout for Thermal Data

The PCB layout shown in Figure 10 represents the reference layout used for the thermal characterisation. Pin 4
(GND1) and pin 8 (GND2) require each a ground plane of 100 mm² for achieving maximum power dissipation. The
Separate output variant for IGBT is conceived to dissipate most of the heat generated through these pins.
The thermal coefficient junction-top (Ψth,jt) can be used to calculate the junction temperature at a given top case
temperature and driver power dissipation:
T j = Ψ th ,jt ⋅ P D + T top

Figure 10 Reference Layout for Thermal Data (JEDEC 1s0p, 100mm², Copper thickness 35 μm)

8.2 Printed Circuit Board Guidelines

The following factors should be taken into account for an optimum PCB layout.
• Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.
• The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained
to increase the effective isolation and to reduce parasitic coupling.
• In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept
as short as possible.

Data Sheet 21 Rev. 2.0, 2014-11-10

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG