SB3H90 and SB3H100

New Product Vishay Semiconductors

formerly General Semiconductor

High Voltage Schottky Rectifier Reverse Voltage 90 to 100V

DO-201AD Forward Current 3.0A

1.0 (25.4)
Features
Min. • Plastic package has Underwriters Laboratory
0.210 (5.3) Flammability Classification 94V-0
0.190 (4.8) • Low power loss, high efficiency
Dia.
• For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
0.375 (9.5) • Guardring for overvoltage protection
0.285 (7.2) • High temperature soldering guaranteed:
250°C/10 seconds at terminals

Mechanical Data
Case: JEDEC DO-201AD molded plastic body
1.0 (25.4)
Min. Terminals: Plated axial leads, solderable per
0.052 (1.32) MIL-STD-750, Method 2026
0.048 (1.22) Polarity: Color band denotes cathode end
Dia.
Mounting Position: Any
Weight: 0.04 oz., 1.12g
Dimensions in inches and (millimeters)

Maximum Ratings and Thermal Characteristics (T A = 25°C unless otherwise noted)

Parameter Symbol SB3H90 SB3H100 Unit

Maximum repetitive peak reverse voltage VRRM 90 100 V
Maximum working reverse voltage VRWM 90 90 V
Maximum DC blocking voltage VDC 90 100 V
Maximum average forward rectified current at TL = 90°C IF(AV) 3.0 A
Peak forward surge current
8.3ms single half sine-wave superimposed on IFSM 100 A
rated load (JEDEC Method)
Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ IRRM 1.0 A
Critical rate of rise of reverse voltage dv/dt 10,000 V/µs
RθJA 30
Maximum thermal resistance(2) °C/W
RθJL 10
Storage temperature range TSTG –55 to +175 °C
Maximum operating junction temperature TJ +175 °C

Electrical Characteristics (TA = 25°C unless otherwise noted)

Maximum instantaneous IF = 3.0A, TJ = 25°C 0.80

VF V
forward voltage at: (1) IF = 3.0A, TJ = 125°C 0.65
Maximum DC reverse current TJ = 25°C 20 µA
IR
at rated DC blocking voltage TJ = 125°C 4 mA
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

Document Number 88720 www.vishay.com

1-Jul-02 1
SB3H90 and SB3H100
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 -- Forward Current Fig. 2 -- Maximum Non-repetitive Peak
Derating Curve Forward Surge Current
4.0 100

Peak Forward Surge Current (A)

Resistive or Inductive Load TJ = TJ max.
Average Forward Current (A)

0.375" (9.5mm) lead length 8.3ms single half sine-wave

80 (JEDEC Method)
3.0

60
2.0

40

1.0
20

0 10
0 25 50 75 100 125 150 175 1 10 100

Lead Temperature (°C) Number of Cycles at 60 Hz

Fig. 3 -- Typical Instantaneous Forward Fig. 4 -- Typical Reverse

Characteristics Characteristics
100 1000
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)

TJ = 175°C
10 TJ = 150°C
100
TJ = 125°C
TJ = 150°C
10
1 TJ = 100°C
TJ = 100°C
TJ = 125°C
1
0.1 TJ = 25°C

0.1
TJ = 25°C
Pulse Width = 300 s
1% Duty Cycle
0.01 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100

Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction Fig. 6 - Typical Transient
Capacitance Thermal Impedance
1,000
Transient Thermal Impedance (°C/W)

100
TJ = 25°C
f = 1.0 MHz
Junction Capacitance (pF)

Vsig = 50mVp-p

10

100

10 0.1
0.1 1 10 100 0 0.1 1 10 100

Reverse Voltage (V) t, Pulse Duration (sec.)

www.vishay.com Document Number 88720

2 1-Jul-02