AHC/AHCT Designer's Guide: September 1998

W O R L D L E A D E R I N L O G I C P R O D U C T S
AHC/AHCT Designer’s Guide

September 1998
Graduate to new performance levels with AHC . . .

• 3-times faster than HCMOS
• Half the static power consumption of HCMOS
• Same low noise as HCMOS
. . . for the same market price as HCMOS.
AHC/AHCT
Designer’s Guide
SCLA013D
February 2000
Printed on Recycled Paper

IMPORTANT NOTICE
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TI warrants performance of its semiconductor products to the specifications applicable at the

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Copyright  2000, Texas Instruments Incorporated

INTRODUCTION
The Advanced High-Speed CMOS (AHC) logic family from Texas Instruments (TI) provides an
effortless migration path for HCMOS users who require higher speed and lower power without
paying a noise or price premium. The AHC logic family also offers the broadest selection of logic
choices, ranging from simple gates/MSI/octals (SN74AHCxxx) to single-gate (SN74AHC1Gxx)
and Widebus (SN74AHC16xxx) devices. Add to that the ability to operate at both 3.3 V and
5 V, and you have a reliable migration path from HCMOS.
Performance characteristics of the AHC family are:
• Low noise – The AHC family allows designers to maintain the same low noise
characteristics of HCMOS without the overshoot and undershoot typical of higher-drive
devices usually required to achieve AHC speeds.
• Low power – The AHC family, by using CMOS technology, has low power consumption
(40-µA maximum static current, one-half that of HCMOS).
• Speed – With typical propagation delays of 5.5 ns (’245), AHC offers three times the speed
of HCMOS.
• Drive – Output-drive current is ±8 mA at 5-V VCC and ±4-mA at 3.3-V VCC.
• 5-V input tolerance at 3.3 V – With the input diode to VCC removed, AHC is specified for
both 5-V and 3.3-V operation.
• Pin-for-pin compatibility – All AHC devices are pin-for-pin compatible with
industry-standard functional pinouts.
• Options – With CMOS- (AHC) and TTL- (AHCT) compatible devices available in
gates/MSI/octals, single gates, and Widebus, the AHC family offers the widest selection of
logic choices on the market.
• Packaging – AHC devices are available in D and DW (SOIC), N (PDIP), DB and DL
(SSOP), DGG and PW (TSSOP), DGV (TVSOP), and DBV (SOT) and DCK (SC–70)
packages. Selected AHC devices are available in military versions (SN54AHCxx).
For more information on these or other TI products, please contact your local TI representative,
authorized distributor, the TI technical support hotline at 972-644-5580, or visit the TI logic home
page at http://www.ti.com/sc/logic.
For a complete listing of all TI logic products, please order our logic CD-ROM (literature number
SCBC001) or Logic Selection Guide (literature number SDYU001) by calling our literature
response center at 1-800-477-8924.
TI and Widebus are trademarks of Texas Instruments Incorporated.
iii
iv
Contents
Your Next Choice: Advanced High-Speed CMOS Logic (AHC) 1
Speed Up Your System With AHC/AHCT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Improve Switching Performance With AHC/AHCT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Technical Comparison of AHC Versus Other CMOS Logic Families (’245 Function) . . . . . . . . . . . . . . . 4
Widebus Minimizes Board Space (SN74AHC16xxx/SN74AHCT16xxx) . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Multiple Package Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Single-gate Logic (SN74AHC1Gxxx/SN74AHCT1Gxxx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Advanced High-Speed Logic Devices 9
Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2. DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.2 Output Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.3 Protection Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.1 Electrostatic Discharge (ESD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.2 Latch-Up Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3. Dynamic Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.1 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2 Quality of the Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.2.1 Cross Talk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.2.2 Ground Bounce . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.3 Signal Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.3.1 Point-to-Point Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.3.2 Bus Lines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.4 Behavior With Slow Signal Edges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
4. Special Application Problems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4.1 Level Matching and Conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4.2 Partial Switching Off of Parts of a System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5. Comparison of AHC and HC Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6. Package Construction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6.1 Single-gate Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
7. Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
8. References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
v
Contents (Continued)
Appendix A: Product Portfolio A–1
Additional Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–3

Product Availability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–3
vi
Your Next Choice: Advanced High-Speed CMOS Logic (AHC)
Speed Up Your System With AHC/AHCT
Do you use HCMOS logic in telecom, computer, industrial, automotive, or consumer applications?
For the same price as HCMOS, would you like to plug in devices with:
• 3-times the speed of HCMOS
• Half the static power consumption of HCMOS
• The same low noise as HCMOS
• A wide supply-voltage range
If so, this designer’s guide is for you . . . and so is advanced high-speed CMOS (AHC).
Convert HC to AHC
Family Positioning
5V
64 BCT 3.3 V
F
Drive – I OL – mA
24 LVC AC/ACT
12
AHC/ HC/HCT
8
AHCT LV
5 10 15 20
Performance – max tpd – ns
AC/ACT Advanced CMOS HC/HCT High-Speed CMOS

AHC/AHCT Advanced High-Speed CMOS LV Low Voltage CMOS
BCT BiCMOS Technology LVC Low Voltage CMOS
F 74F Bipolar Technology
1
Power vs Frequency
70 ’AC11245
60
Power Per Bit – mW
50
’HC240 VCC = 5 V
40
30
’LV244
’AC11245 VCC = 3.3 V
20
’HC240 VCC = 3.3 V
10 ’AHC244 VCC = 5 V
’AHC244 VCC = 3.3 V

0
0 10 20 30 40 50
Frequency – MHz
Triple the Speed, Same Drive, But Less Power Consumption

The AHC family typically replaces the slower 5-V HCMOS family, but is additionally specified at VCC = 3.3 V.
Drive capability is the same as for the HC/HCT family, while speed is comparable to that of the AC/ACT, BCT, and 74F
families. For instance, the typical propagation delay time of octal transceiver SN74AHC245 at VCC = 5 V is 5.5 ns (8.5 ns
maximum) with drive capability of IOH,OL = ±8 mA. The CMOS-compatible AHC device can be used in low-voltage systems.
However, when operated at VCC = 3.3 V, tpd slows to 8.5 ns (typically) at a drive of IOH,OL = ±4 mA.
The comparison of the power consumption between AC, HC, LV, and AHC families shows that for power-critical systems the
use of AHC lengthens battery life.
2
Improve Switching Performance With AHC/AHCT
Switching Characteristics Comparison

5.5 V
VCC = 5 V
5.0 V Load = 50 Ω/50 pF
4.5 V
4.0 V
AC244
3.5 V
3.0 V
HC244
2.5 V
2.0 V
VI
1.5 V
AHC244
1.0 V
0.5 V
0.0 V
–0.5 V
–1.5 V
0 2 4 6 8 10 12 14 16 18 20
HC AHC AC Time – ns
Slew Rate (tPHL) 0.9 0.8 1.8 V/ns
5.5 V
5.0 V
4.5 V
AC244
4.0 V
3.5 V
3.0 V
VI HC244
2.5 V
AHC244
2.0 V
1.5 V
1.0 V
0.5 V
VCC = 5 V
0.0 V
Load = 50 Ω/50 pF
–0.5 V
0 2 4 6 8 10 12 14 16 18 20
HC AHC AC Time – ns
Slew Rate (tPHL) 0.8 0.7 1.5 V/ns
Low Switching Noise

The HCMOS family has very low switching noise, which is achieved primarily through a low slew rate, typically, 0.9 V/ns
and the low drive capability of ±8 mA, resulting in low current spikes during switching. Though the speed of AHC/AHCT has
been increased, the slew rate of AHC/AHCT is even lower than HCMOS. The ground bounce of AHC devices attributed to
simultaneous switching is better than that of the standard HCMOS family. This is specified with the parameters VOL(P) and
VOL(V). For example, SN74AHC244:
VOL(P) (typ) = 0.5 V
VOL(V) (typ) = –0.2 V
3
Ground-Bounce Comparison
AC244
HC244
Noise – 500 mV/Division
AHC244
Time – 1 ns/Division
Technical Comparison of AHC Versus Other CMOS Logic Families (’245 Function)
AHC/AHCT HC/HCT AC/ACT
VCC 5V 3.3 V 5V 2V 5V 3.3 V
Drive –8/8 mA –4/4 mA -8/8 mA 20 µA –24/24 mA –12/12 mA
Speed (typical) 5.5 ns 8.3 ns 18 ns 54 ns 3.5 ns 5 ns
Ground bounce 0.5 V (–0.2 V) N/A 0.6 V (–0.3 V) N/A 1.5 V (–1.8 V) N/A
8.6 pF
Power dissipation capacitance† N/A 40 pF N/A 45 pF N/A
(at 1 MHz)
Quiescent power dissipation 40 µA 80 µA 40 µA
Input 3.3 V 5V 3.3 V 3.3 V
Level conversion option
Output 5V 3.3 V 5V 5V
Widebus package available Yes Yes No No No Yes
† CL = 50 pF, f = 10 MHz unless otherwise specified
4
Widebus Minimizes Board Space
(SN74AHC16xxx/SN74AHCT16xxx)
The trend toward 16-bit and 32-bit Widebus systems to increase data throughput continues unabated, requiring bus drivers that
support these formats.
Many 16-bit bus systems can be supported easily by TI Widebus devices. These are designed to replace the commonly used
8-bit functions. A single 16-bit Widebus package replaces 2 × 8-bit packages. A typical Widebus example is the
SN74AHC16244, which incorporates twice the functionality of an SN74AHC244.
Typical Widebus Example

×2 8-Bit
×1 16-Bit
+ =
5
Multiple Package Options
AHC Packages
PDIP (N) SOIC (D/DW) SOT-23 (DBV) SC-70 (DCK)
DUAL-IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
PIN COUNT 14 16 18 20 28 16 20 28 5 5
Width 6.60 6.60 6.60 6.60 14.22 7.59 7.59 7.59 1.80 1.35
Length 19.69 19.69 23.37 24.77 36.83 10.41 12.95 18.03 3.10 2.2
Pitch 2.54 2.54 2.54 2.54 2.54 1.27 1.27 1.27 0.95 0.65
Height 5.08 5.08 5.08 5.08 5.08 2.65 2.65 2.65 1.3 1.0
SSOP (DB/DL) TSSOP (DGG/PW) TVSOP (DGV)

SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
PIN COUNT 20 48 14 20 48 14 16 20 24 48
Width 5.60 7.59 4.80 4.50 6.40 4.50 4.50 4.50 4.50 4.50
Length 7.50 16.00 5.10 6.60 12.60 3.70 3.70 5.10 5.10 9.80
Pitch 0.65 0.635 0.65 0.65 0.50 0.40 0.40 0.40 0.40 0.40
Height 2.00 2.79 1.20 1.20 1.20 1.20 1.20 1.20 1.20 1.20
All linear dimensions are maximums specified in millimeters.
All devices comprising gate, flip-flop, or bus functions are available with CMOS- and TTL-compatible I/Os, and are available in a broad range
of package options.
PACKAGES
TI NOMENCLATURE PHILIPS MOTOROLA FAIRCHILD TOSHIBA
SOT-23 (new) DBV (5 pin) N/A N/A M5X F
SC-70 (new) DCK (5 pin) N/A N/A P5X FU
PDIP N, NT (24 pin) N P N P
SOIC D, DW (20 pin–>) D M M FN
SSOP DB (24 pin–>), DL (48 pin–>) DB, DL SD MSA, MEA FS
TSSOP PW (–>24 pin), DGG (48 pin–>) PW, DGG DT MTC, MTD ST
TVSOP (new) DGV (≤ 56 pin) N/A N/A N/A N/A
Data sheets are available in the AHC/AHCT Logic Advanced High-Speed CMOS Data Book, literature number SCLD003A,
or at http://www.ti.com/sc/logic.
6
Single-Gate Logic
(SN74AHC1Gxxx/SN74AHCT1Gxxx)
TI’s Single-gate Logic helps designers of handheld systems, such as portable computers, remote control units, and cellular
telephones, to reduce the size and weight of their designs. The extremely small logic devices simplify the layout of printed
circuit boards, and can be used to make simple functional modifications of ASICs without the cost and delay of redesigning.
Nomenclature Package
SN 74 AHC 1G xx DBV R Area:
9 mm2
SOT-23
Tape and Reel 1.8 mm 3.0 mm
Height (max): (DBV)
SOT-23 Package 1.45 mm
Logic Function Lead Pitch:

0.95 mm 3.1 mm
Single-gate
Advanced HCMOS Technology
Nomenclature Package
SN 74 AHC 1G xx DCK R Area:
5 mm2
SC-70
Tape and Reel 1.25 mm 2.1 mm
Height (max): (DCK)
SC-70 Package 1.10 mm
Logic Function Lead Pitch:

0.65 mm 2.0 mm
Single-gate
Advanced HCMOS Technology
The Principle
Standard Gates Single-gate
Board Space Comparison
Quad Gate Single-gate Area Saving
TSSOP 14 Pin SOT-23 5 Pin 24.36 mm2 or
33.66 mm2 (max) 9.3 mm2 (max) 72.7%
Benefits
• Small Package (SOT-23)
• Optimized PCB Layout
• Reduced EMI Noise
• Enhanced ASIC Functionality
Performance
• 3.5-ns typical propagation delay
• ±8-mA output drive
• 20-µA static current
• CMOS (AHC)- and TTL (AHCT)-compatible versions
Cross-Reference Examples
TEXAS INSTRUMENTS TOSHIBA
SN74AHC1G00DBV TC7SH00F
SN74AHCT1G00DBV TC7ST00F
SN74AHCU1G04DBV TC7SHU04F
7
8
Abstract
With the advanced high-speed CMOS family of logic devices, TI has brought to market a series of components that fully meets
today’s requirements for increased speed, that is, reduced signal delay time, and for operation from supply voltages of 5 V and
3.3 V. This document first addresses the electrical characteristics of these new devices. A detailed investigation of
dc parameters, input/output characteristics, and dynamic behavior follows. Power consumption, cross talk between signal
lines, and electromagnetic compatibility also are discussed.
1. Introduction
The introduction of the high-speed CMOS family SN74HC device at the beginning of the 1980s provided the system designer
with a sensible and logical alternative to bipolar logic devices, which, until then had been so widely used. These CMOS devices
featured delay times approximately comparable to those of the low-power Schottky family. The output currents that these
components could deliver were also comparable to those of their bipolar predecessors. An advantage of the CMOS devices
is the wide range of supply voltages (2 V to 6 V) with which these components could be operated. It allowed their effective
application in battery-operated equipment. However, as with all other CMOS devices, lowering the supply voltage meant that
increased delay times had to be tolerated. A few years later, improvements in semiconductor technology made possible the
introduction of the advanced CMOS (AHC) devices. In addition to the advantage of a wide range of supply voltage, these
devices featured significant improvements in drive capability and delay time. As a result, CMOS devices were for the first time
able to penetrate a domain that had been the reserve of fast bipolar logic devices from the SN74F and SN74AS series. Also,
whereas CMOS devices were seldom used in applications with extreme requirements of drive capability and speed, such as
backplane wiring in large computer systems, advanced CMOS devices established a firm position in all applications. Examples
include applications in personal computers and workstations.
With the introduction of notebook computers at the beginning of the 1990s, new requirements were placed on logic devices
to perform well at the supply voltage of 3.3 V, which is usual in battery-operated equipment. The HC and AC devices performed
inadequately with regard to drive capability and delay time at this low supply voltage. As fast logic circuits, the LVC and ALVC
devices were acceptable successors to the AC devices. In drive capability and delay time, these new logic families operating
at a supply voltage of only 3.3 V provided the same results as the well-known AC devices using a supply voltage of 5 V. In
3.3-V applications, a useable successor to the HC devices was still missing. In many applications, the outstanding
characteristics of the LVC and ALVC devices are not required. In fact, the interference resulting from the steep-edges
characteristic of such devices is a disadvantage. They require additional circuit-design precautions, such as multilayer circuit
boards, which, in turn, increase equipment costs unnecessarily. With the introduction of the LV series, the attempt was made
to create quickly an appropriate logic family. Clever modifications of the process steps in semiconductor manufacturing
allowed better performance at a lower supply voltage, but the long-term result was inadequate. Consequently, a new logic
family, which, at a supply voltage of 3.3 V, would have the same, or better characteristics as its well-known predecessor was
needed. Also, several problems associated with interfaces of circuits operating at 3.3 V and 5 V needed to be addressed. For
various reasons, future systems are expected to use both supply voltages.
The logical answer to all these questions is the series of advanced high-speed CMOS devices manufactured in a process that
permits gate lengths of 1 µm. The result is typical delay times of 6 ns at 3-V VCC that, in the past, were measured on ALS
circuits. This document acquaints the system designer with the characteristics of these advanced components. In addition, a
large number of questions with which the designer is often confronted are discussed. Many application problems that can be
solved elegantly with this new logic family are shown.
9
2. DC Characteristics
2.1 Input Circuit

As in all CMOS devices, the input stage consists of a p-channel and an n-channel transistor (see Figure 1) connected in series.
With a high logic level at the input (VI = VCC), the n-channel transistor Q2 is conducting and the p-channel transistor Q1 is
turned off. A low logic level is created at the output of this inverter. The corresponding complementary state applies with a
low logic level at the input (VI = 0 V). In both cases, no current flows through the two transistors. This property is responsible
for the low current drain of CMOS devices in the quiescent state.
VCC
Q1 Q5 Q3
Input
D1
Q2 Q4
Figure 1. Simplified Input of an AHC Device

Transistors Q1 and Q2 are chosen to have the same transfer characteristics to ensure that the switching threshold of a circuit
of this kind is at 50% of VCC (see Figure 2). If the two input transistors Q1 and Q2 have the same characteristics, behavior of
the circuit is ensured over a wide range of supply voltage. For CMOS devices, an optimum noise margin is possible in this way.
Such devices often are used with interfaces when the other sides deliver only TTL-compatible signals with a high logic level
of >2.4 V. To process such signals reliably, a TTL-compatible version with the designation AHCT is available in addition to
the AHC family. To shift the switching threshold to lower values, transistors Q1 and Q2 are made so different in their
characteristics that the switching threshold becomes about 30% of VCC. Using a supply voltage of 4.5 V to 5.5 V, as is usual
with TTL circuits, TTL-compatible threshold voltages for the input stage are achieved (see Figure 3). Such a circuit basically
operates with other supply voltages. In this case as well, the threshold voltage has a specific relationship to the input voltage.
However, under these conditions the threshold voltage is shifted to values that cannot allow an adequate noise margin in the
system. Thus, the TTL-compatible AHCT devices should operate over a range of supply voltage from 4.5 V to 5.5 V.
When a device of this kind is controlled by signals coming from similar devices, and its rise and fall times are only a few
nanoseconds, reliable operation can be expected. However, in many cases, for example, at the interfaces with other parts of
an equipment, this reliability may not be possible. When there are slowly rising edges at the input, oscillation within the device
can occur as a result of high voltage amplification, high cutoff frequency of the transistors, and parasitic components coming
mostly from the package (see Package Construction). To suppress this oscillator, a kind of Schmitt-trigger circuit has been
integrated into the input stage. In addition, the inverted input signal is inverted again with inverter Q3/Q4, and then fed back
through transistor Q5 to the output of the input inverter. The switching thresholds on the positive and negative edges at the input
differ by about 200 mV and the input circuit has the hysteresis characteristic that is typical of Schmitt-trigger circuits. Transfer
characteristics of AHC devices are shown in Figure 2 and those of TTL-compatible AHCT devices are shown in Figure 3.
10
6
VCC = 5 V
5
4
VCC = 3 V
VO – V
3
VCC = 2 V
2
0
0 1 2 3 4 5
VI – V
Figure 2. Transfer Characteristics of AHC Devices
6
VCC = 5.5 V
5
VCC = 4.5 V
4
VO – V
0
0 1 2 3 4 5
VI – V
Figure 3. Transfer Characteristics of AHCT Devices

Hysteresis in the input circuit is intended only to process reliably signals that have a slew rate of <10 ns/V. With a signal swing
of 5 V, this corresponds to rise and fall times of about 50 ns. If signals with considerably longer rise and fall times are processed,
the specially developed Schmitt triggers, such as the SN74AHC(T)14, should be used. These components have a considerably
larger hysteresis of about 800 mV at VCC = 5 V and, therefore, allow processing of very slow edges without any problems.
When the supply voltage changes, switching thresholds and hysteresis change approximately in proportion to the supply
voltage (see Figure 4).
11
5
4
VCC = 5 V
3
VO – V 2
0
0 1 2 3 4 5
VI – V
4
VCC = 3.3 V
3
VO – V
0
0 1 2 3 4 5
VI – V
3
VO – V
VCC = 2 V
2
0
0 1 2 3 4 5
VI – V
Figure 4. Transfer Characteristics of the SN74AHC14 Schmitt Trigger

To process signals having a swing of only about 3 V in a system with a supply voltage of 5 V, the TTL-compatible
SN74AHCT14 Schmitt trigger is available. This device has the same switching characteristics as the previously described
Schmitt trigger, except that appropriate circuitry shifts the switching thresholds into the region of the commonly used
TTL-voltage levels. Figure 5 shows the transfer function of such components.
12
5
4
VCC = 5 V
VO – V
3
0
0 1 2 3 4 5
VI – V
Figure 5. Transfer Characteristics of a TTL-Compatible SN74AHCT Schmitt Trigger

Due to the very low current consumption of CMOS devices in normal operation, only one of the two complementary transistors
connected in series conducts. However, this is true only if the input voltage is more negative than the threshold voltage (Vtn)
of the n-channel transistor or more positive than the supply voltage minus the threshold voltage (VCC – Vtp) of the p-channel
transistor. The threshold voltages Vt of the transistors are, in this case, about 1 V. Over a range of input voltage from
Vtn < Vi < (VCC – Vtp), both transistors simultaneously conduct, such that current flows in the input stage that cannot be
neglected, and that must be added to the supply current ICC of the circuit. Figure 6 shows the current consumption of AHC
and AHCT devices as a function of the input voltage. With both varieties of circuit, the supply current, with the input threshold
voltage which is involved, reaches a maximum of about 1 mA to 2 mA. The effective operation of the Schmitt trigger is
demonstrated by the transfer characteristics of the AHCT device, as well as in the very rapid change in current that arises after
the input voltage exceeds the threshold voltage of ≈1.5 V.
2.5
2.0
I CC – mA
1.5
1.0
0.5
0.0
0 1 2 3 4 5
VI – V
Figure 6. Supply Current as a Function of Input Voltage

In normal operation of a CMOS device, the effect previously described is not relevant, because the high and low logic levels
supplied by the outputs of another CMOS device always ensure that the transistor in question turns off. However, if such
devices are, for example, controlled by bipolar circuits, results are different. With a high logic level at the output, these supply
a voltage that can only be >2.4 V. TTL-compatible CMOS devices, such as those from the SN74AHCT series, recognize such
a level as being a high logic state. However, for previously stated reasons, under these conditions a supply current flows in the
input stage (see Figure 6), which is significant, particularly with battery-operated equipment. To give system designers specific
information about these phenomena, TTL-compatible CMOS-device data sheets have values for the ∆ICC parameter (see
Table 1). ∆ICC specifies how much the supply current increases when the high logic level that is typically supplied by a TTL
device is applied to one of its inputs. Data sheets show a considerably higher value than that given in Figure 6, but Figure 6
shows only the typical behavior of an AHC or AHCT device. As a result of process and parameter variations and to account
for the worst case, values in the data sheets must be used.
13
Table 1. Specification of ∆ICC
SN74AHCT245
PARAMETER TEST CONDITIONS Vcc UNIT
MIN MAX
∆ICC One input at 3.4 V, Other inputs at VCC or GND 5.5 V 1.5 mA
Input characteristics of an AHC device depend on the input of the inverter with a diode connected in parallel (see Figure 1)
that is part of the electrostatic discharge (ESD) protection circuit for the input. In addition, the diode limits negative-going
overshoots caused by line reflections and improves the quality of the signal. Over a voltage range of 0 ≤ VI ≤ 7 V, the circuit
has an extremely high resistance, as indicated by the value of II in Table 2. When a device’s output that is in an inactive
high-impedance state is connected internally in parallel with an input, as in bidirectional circuits, for example, SN74AHC245,
IOZ should be used as the effective input current (see Table 2). The value of IOZ is the sum of the leakage currents of the input
and output circuits.
Table 2. Specification of the Input Current
SN74AHC245
PARAMETER TEST CONDITIONS UNIT
MIN MAX
II VI = VCC or GND ±1 µA
IOZ† VO = VCC or GND, VI(OE) = VIL or VIH ±2.5 µA
† The parameter IOZ includes the input leakage current.
Input voltages greater than 7 V must be avoided to preclude damage to the gate oxide of the input stage. This damage is not
necessarily permanent, but will adversely affect the expected lifetime of the circuit. The gate oxide of AHC devices is only
200 Å thick. An input voltage of 7 V corresponds to a field strength over the gate oxide of 350 kV/cm. Although breakdown
of the oxide is expected only at input voltages above 10 V, electrons tunnel increasingly into the gate oxide at field strengths
greater than 350 kV/cm, influencing characteristics of the transistors and causing failure.
In practice, negative input voltages are of greater interest. These voltages result from negative-going overshoots generated by
line reflections. To limit these negative overshoots and improve the quality of the signal, an effective clamping diode (D1 in
Figure 1) is used. Figure 7 shows a typical input characteristic of an AHC device. The input is at a high resistance with positive
input voltages (0 V ≤ VI ≤ 7 V). With negative input voltages, the clamping diode conducts. It also limits negative-going
overshoots at higher currents to voltages of about –1 V (see Figure 7).
7
6
5
4
VI – V
3
2
1
0
–1
–2
–100 –80 –60 –40 –20 0 20
II – mA
Figure 7. Input Characteristic of an AHC Device
14
2.2 Output Circuit
The simplified output circuit of an AHC device is shown in Figure 8. Only those components necessary to understand the
behavior of the circuit are shown.
VCC
Q1
D1
Internal
Logic Output
Q2
D2
Figure 8. Output of an AHC Device

The internal circuit of the device that drives the load consists of two complementary MOS transistors, Q1 and Q2, connected
in series to deliver the necessary output currents. Diodes D1 and D2 are parts of the ESD protection circuit. These diodes, which
are created as parasitics during the manufacture of the device, also are intentionally integrated into the internal device circuit.
Currents shown in Table 3, which are extracted from the data sheet, are measured under test conditions that produce correct
operation of these devices. These values ensure the operation without problems of several logic devices connected together,
but give only limited information about their actual behavior.
Table 3. DC Voltage Specifications of the AHC Outputs
SN74AHC245
PARAMETER TEST CONDITIONS VCC UNIT
MIN TYP MAX
2V 1.9 2
IOH = –50 mA 3V 2.9 3
VOH 4.5 V 4.4 4.5 V
IOH = –4 mA 3V 2.58
IOH = –8 mA 4.5 V 3.94
2V 0.1
IOL = 50 mA 3V 0.1
VOL 4.5 V 0.1 V
IOL = 4 mA 3V 0.36
IOL = 8 mA 4.5 V 0.36
IOZ † VO = VCC or GND, VI(OE) = VIL or VIH 5.5 V ±0.25 mA
† The parameter IOZ includes the input leakage current.
Figure 9 shows the high- and low-logic output characteristics of AHC devices for various supply voltages. Figure 10 shows
the capacitive loading effect on AHC devices.
Output characteristics of AHC devices with 3-state outputs in the inactive high-impedance state are shown in Figure 11. The
output data are based on the simplified circuit of the output stage in Figure 8. In the operating state discussed here, output
transistors Q1 and Q2 are nonconducting. Over a range of output voltage from 0 V ≤ VO ≤ VCC, the circuit is, accordingly,
at a high resistance. If the output voltage is raised to a value above VCC + 0.7 V, or reduced to below –0.7 V, diode D1 or D2,
respectively, conducts and will limit the output voltage. The output characteristic with VCC = 0 V is shown in Figure 11. At
this supply voltage, the output transistors do not conduct. The circuit then behaves like two diodes connected in parallel but
with opposite polarities. These curves apply to circuits with 3-state outputs and to those with the push-pull output stage, which
is usual with all CMOS devices.
15
0 30
VCC = 4.5 V TA = 25°C
VCC = 4.5 V
(MAX)
I OH – Output High Current – mA
I OL – Output Low Current – mA

TA = 25°C
(TYP)
–10 20
TA = 85°C
(MIN) TA = 85°C
(MAX)
–20 10
TA = 25°C TA = 25°C
(MIN) (TYP)
–30 0
2.5 2.9 3.3 3.7 4.1 4.5 0 0.4 0.8 1.2 1.6 2.0
VOH – Output High Voltage – V VOL – Output Low Voltage – V
0 30
TA = 85°C
VCC = 3.0 V (MIN) VCC = 3.0 V
I OH – Output High Current – mA
I OL – Output Low Current – mA
–10 TA = 25°C 20 TA = 25°C

(MIN) (TYP)
TA = 25°C
(TYP) TA = 25°C
–20 10 (MAX)
TA = 85°C
(MAX)
–30 0
1.0 1.4 1.8 2.2 2.6 3.0 0 0.4 0.8 1.2 1.6 2.0
VOH – Output High Voltage – V VOL – Output Low Voltage – V
Figure 9. Output Characteristics of an AHC Device
16
16
TA = 85°C (MAX)
0.13 ns/pF
t pd – Propagation Delay Time – ns

12 TA = 25°C (MAX)
0.115 ns/pF
TA = 25°C (TYP)
4 0.07 ns/pF
0
50 100 150 200
CL – Load Capacitance – pF
Figure 10. Capacitive Loading Effect on AHC Devices
7
VCC = 5 V
6
4
VCC = 3.3 V
VO – V
2
VCC = 0 V
1
–1
–2
–100 –50 0 50 100
IO – mA
Figure 11. Output Characteristics in High-Impedance State With Supply Voltage Switched Off
17
2.3 Protection Circuits
Because of their small internal structures, all integrated circuits are susceptible to ESD. An additional problem arises with
complementary MOS circuits whose internal structures form parasitic thyristors, which under certain conditions, can be fired
and cause a short circuit. Destruction of the device usually is the unavoidable consequence. Therefore, when developing and
manufacturing integrated circuits, semiconductor manufacturers must take precautions to protect them from ESD.
2.3.1 Electrostatic Discharge (ESD)

ESD occurs when two bodies with different charges are brought together and an equalization of their charges takes place. This
effect is well-known from the situation in which someone walks on a carpet and becomes charged, then touches a metallic
object, such as a door handle or water tap. The current that flows as the charge is equalized can be felt as a tingle, or even an
unpleasant shock, at the point of body contact. As a result of high charging voltages of several kilovolts and the high currents
that result, semiconductors can be destroyed in these circumstances. In practice, three established test procedures reflect the
various situations that can arise:
Human-Body Model
This model simulates the situation in which the energy stored in the human body is discharged into the device under test. In
this case, a 100-pF capacitor is charged to ±2000 V, then discharged through a resistor of 1.5 kΩ into the device under test.
The rise time of the discharge current must be less than a nanosecond.
Machine Model
In this model, immunity to disturbances that contain considerably more energy but have a significantly longer current rise time
is tested. For this purpose, a 200-pF capacitor is charged to ±200 V, then discharged without any series resistor into the device
under test. The inductances of the lines in the measurement setup (L > 500 nH) reduce the rate of rise of the discharge current
sufficiently.
Charged-Device Model
This test simulates the situation in which an integrated circuit is charged, for example, by sliding along a plastic transport rail
before insertion by an automatic insertion machine, then is discharged when it touches the printed circuit board. The
capacitance of the integrated circuit including package, in which the energy is stored, is then only a few picofarads, but at the
instant of the discharge extremely short rise times can be expected. With integrated circuits as currently used, withstanding
±1000 V can be regarded as sufficient in this test.
The engineer who designs integrated circuits must provide protection circuits that will withstand the stresses of the tests
described above. A distinction must be made between two destructive processes. High energy levels with relatively long rise
times (machine model) in which the protection circuit must be designed with sufficient ability to conduct current away. With
the two other test methods, the danger is that, because of the extremely short rise times, the protection circuit will only partially
conduct and is overloaded in this region.
Conventional protection circuits consist of diodes or zener diodes that conduct away the currents and limit the voltages.
Resistors in series with the circuit to be protected limit the current. Besides reliably diverting the current, whereby the circuit
must be protected against thermal overload, the device also must be protected against excessive voltages, for example, to avoid
a breakdown of the gate oxide of an MOS transistor. In general, a combination of various methods is used to obtain
optimum results.
Figure 12 shows protective circuits used for advanced high-speed CMOS devices. To meet the requirements outlined
previously, the protective circuit is constructed in two stages. The input is first protected by a thyristor consisting of transistors
Q2 and Q3. This provides coarse protection. If the input voltage rises above about 15 V, transistor Q1 breaks down and fires
the thyristor. The latter then short circuits the high currents. Resistors R1 and R2 have values of only a few ohms. Therefore,
the holding current of the thyristor is several tens of mA. When the current is reduced again at the end of the discharge, the
thyristor is extinguished. Transistors Q4, Q5, and Q6 operate as fine protection and are intended principally to protect the input
from excessive voltages. When there are overvoltages at the input, these transistors are driven into breakdown and limit the
voltage, while resistor R3 limits the current.
18
VCC
Q7 Q9
Q4
Q5 D1
Input Output
R3
R1
Q3 D2
Q8 Q10
Q2
Q1 Q6
R2
Figure 12. ESD Protection Circuits

A two-stage protection circuit also is to be found at the output of the circuit. The previously mentioned thyristor (Q11, Q12,
and Q13) provides coarse protection. Diodes D1 and D2 limit the voltages at the output to tolerable levels.
2.3.2 Latch-Up Protection

When manufacturing complementary MOS circuits, p-n-p-n structures are created internally as a result of the various
differently doped regions (see Figure 13). Such structures are thyristors because the anodes and the cathodes are connected
to the VCC and GND, respectively, of the integrated circuit, and inputs and outputs of the circuit form the gates of these
thyristors. If a sufficiently high current is injected into a termination of this kind, the thyristor fires. A short circuit is produced
between the supply-voltage rails, resulting in a high probability that the component will be destroyed.
N-Channel P-Channel
Transistor Transistor
VCC
S G D D G S
P+ N+ N+ N+ P+ P+
RS RW
N-Well
P-Substrate
Figure 13. Parasitic Transistors in a CMOS Device
19
In the early days of CMOS technology, the latch-up effect was a major problem for system designers. Often, many additional
precautions had to be taken in a system to avoid excessive currents in the connections to integrated-circuit devices. This
inevitably increased the cost of the complete equipment. To counteract the disadvantage of CMOS devices at that time,
precautions were taken later when designing the device to prevent latch-up from occurring. This began with the choice of a
high-resistance substrate to prevent the spreading of undesired currents. In addition, n- or p-doped guard rings (see Figure 14)
were placed around critical parts of the circuit that were connected to the corresponding supply-voltage rails. These guard rings
function as additional collectors of the parasitic transistors. Since these collectors are considerably closer to the corresponding
base-emitter areas than the bases of the complementary transistors, they take the major part of the current that wanders about
in the substrate. In this way, the thyristor is not completely eliminated. However, its sensitivity is reduced to such an extent
that, under normal operating conditions, triggering the thyristor is not expected. During the characterization of a new
component (type testing), its resistance to latch-up also is checked. With AHC circuits, a current of ±300 mA is applied to
all relevant pins of the device under test. At an ambient temperature of 125°C and VCC = 7 V, latch-up must not occur. At room
temperature, currents of more than 1 A typically are necessary to cause latch-up.
Four Guard Rings
P-Channel
N-Channel
Transistor
Transistor VCC
S G D D G S
P+ N+ N+ P+ N+ P+ N+ P+ P+
RS RW
N-Well
P-Substrate
Figure 14. Guard Rings in a CMOS Device
20
3. Dynamic Behavior
An important parameter when choosing a device is the delay time. Table 4 gives a comparison between HC/HCT and AC/ACT
devices. Advanced high-speed CMOS devices are about three times faster than comparable HC devices; AHC and the
TTL-compatible AHCT devices have only minor differences with regard to their dynamic characteristics.
Table 4. Comparison of the Delay Times of HC and AHC Devices
DEVICE SN74HC SN74HCT SN74AHC SN74AHCT
’244 buffer 13 ns 15 ns 5.8 ns 5.4 ns
’245 transceiver 15 ns 14 ns 5.8 ns 4.5 ns
’373 latch 15 ns 20 ns 5 ns 5 ns
’374 flip-flop 17 ns 25 ns 5.4 ns 5 ns
3.1 Power Dissipation

The power dissipation of a CMOS circuit is made up of three distinct components:
• Quiescent power dissipation, Pr
• Internal switching losses, Ps
• Losses Pl, that result from the load connected to the output
The following expression thus applies:
P ges +P )P )P
r s l (1)
The quiescent power dissipation, Pr, is calculated as the product of the supply voltage, VCC, and the quiescent current, ICC,
as given in the data sheet. This quiescent current results primarily from the leakage currents of the reverse-biased p-n junctions
in the integrated circuit. At room temperature, it is only a few nanoamperes. This current usually can be neglected, but leakage
currents in depletion layers typically double with a temperature increase of 10°C. In equipment that is operated at high
temperatures, this leakage current can be significant.
The switching loss, Ps, results from charging, discharging, and switching processes inside the device. The charge and discharge
of the internal capacitances of the circuit make up a minor part of the total. The major part comes from the current spikes that
occur when switching every CMOS stage and which, in this case, primarily affect the output stage. If a CMOS output stage
(shown in Figure 8) is switched from a high to low logic level or vice versa, the control voltage on the gate of the transistor
within the device only rises (or falls) in a finite time from low to high. The complementary transistor also is being driven in
this finite time. Thus, at the moment of switchover, both transistors conduct simultaneously for several nanoseconds.
Therefore, a considerable current flows for a short time (see Figure 15) in the circuit. When measuring this current, care must
be taken not to capacitively load the output being measured.
ICC
VI
2
Ch1: 4mA Ch2: 5V 12.5ns
Figure 15. Current Spikes When Switching an AHC Output
21
The charge, Q, and the energy consumed can be calculated at every switching cycle from the amplitude of the current and its
waveform over a period of time. In this way, switching loss, Ps, can be calculated. In practice, a simpler process is used. The
supply current, ICCS, of the circuit being considered is measured at a specific input frequency, fI, but the output must not be
loaded. This current consumption can be thought of as generated by an equivalent power-dissipation capacitance, Cpd, at the
output of the circuit. The following expression then applies:
I CCS +C @V @fpd CC I (2)
or
C pd + VI @ fCCS
CC I
(3)
This power-dissipation capacitance, Cpd, is given in the data sheet. In a particular application, the following formula can be
used to calculate the switching loss Ps:
Ps +C @V @f
pd CC
2
I (4)
Where:
VCC = Supply voltage (V)

fI = Input frequency (Hz)
Cpd = Power-dissipation capacitance (F)
For circuits with 3-state outputs, such as the SN74AHC244, two Cpd values are given. One is for the case in which the output
is active, and the other for the case in which the output is in the inactive high-impedance state.
The third component of the total power dissipation, Pges, is contributed by the charging and discharging of the load connected
to the output. The simplified assumption is that the load connected consists of a capacitor, CL. The power dissipation, Pl,
resulting from this load can be calculated as follows:
PI +C @V @f
L CC
2
O (5)
Neglecting the quiescent power dissipation, Pr, the following expression gives total power dissipation:
P ges + ǒC @ f ) C @ f ǓV
pd I L O CC
2
(6)
For a SN74AHC244, the data sheet gives a power-dissipation capacitance, Cpd, of 8.6 pF. With a capacitive load, CL, of 50 pF
and VCC = 5 V, the following then applies:
P ges + (8.6 pF @ f ) 50 pF @ f )5
I O
2
(7)
With a buffer such as the SN74AHC244, the input and output frequencies are the same (fI = fO). In this case, the resulting power
dissipation per output becomes:
P ges + 1.47 mWńMHz (8)
Figure 16 provides a comparison between the theoretical power dissipation calculated from the formula above and the
dissipation actually measured. There is good correlation between the theoretical result and the measurements made. Figure 17
shows the measurement results at a supply voltage VCC = 3.3 V and load of 50 pF or with no load at the output.
22
700
SN74AHC244
VCC = 5 V
600 CL = 47 pF
Eight Outputs Switching Measured
Power Dissipation – mW
500
Calculated
400
300
200
100
0
0 10 20 30 40 50 60
Frequency – MHz
Figure 16. Power Dissipation of SN74AHC244 Bus-Interface Device (VCC = 5 V)
500
SN74AHC244
VCC = 3.3 V
400 Eight Outputs Switching
Power Dissipation – mW
CL = 47 pF
300
200
CL = 0 pF
100
0
0 10 20 30 40 50 60
Frequency – MHz
Figure 17. Power Dissipation of SN74AHC244 Bus-Interface Device (VCC = 3.3 V)
3.2 Quality of the Waveforms

An important parameter that significantly affects a circuit or system is the quality of the waveforms. The signals transmitted
by the output of an integrated circuit are influenced in many ways en route to the receiver. One form of interference is cross
talk, which is coupled from nearby lines to the line where the transmission is occurring. With fast logic circuits, additional
interference is generated within the circuits themselves, which can be traced back to the voltage drops across the inductances
of the package. Last, waveform distortions occur as a result of reflections along the line.
23
3.2.1 Cross Talk
The cross talk between adjacent signal lines results from the undesirable inductive and capacitive coupling between them. A
precise mathematical treatment of this phenomenon is very complicated, particularly because the precise electrical
characteristics of the lines, such as the line inductance and capacitance and the line mutual inductance and mutual capacitance,
must be known. For the system designer, it usually is sufficient to know the behavior of typical configurations to draw
conclusions about similar situations in other applications. Typical line configurations are illustrated in Figure 18.
a) Transmission in Same Direction

(far-end cross talk)
G1 G2
VCC
G4 G3
b) Transmission in Opposite Direction

(near-end cross talk)
G1 G2
VCC
G3 G4
Figure 18. Power Transmission in Same and Opposite Directions

For the following measurements, a measurement setup was used in which on a circuit board two 0.6-mm wide, conductors with
a spacing of 0.6 mm were run parallel over a distance of 25 cm. Experience has shown that significantly different results are
not obtained with a narrower conductor width, provided the ratio of conductor width to conductor spacing is 1:1.
If gate G1 is switched to have transmission in the same direction (see Figure 18a), the change of voltage is coupled inductively
and capacitively into the line running parallel with it. The interfering signal first encounters the low resistance output of gate
G4, where it is largely short circuited. After the waveform arrives at the end of the line subjected to this interference, only a
low level of interference voltage will be measurable at the input of gate G3 (see Figure 19). With respect to cross talk, this
configuration, known as far-end cross talk, is not critical.
Disturbing Signal
Signal on Disturbed Line “High”
Signal on Disturbed Line “Low”
2
Ch1: 2V Ch2: 2V 12.5ns
Figure 19. Far-End Cross Talk With Line Length of 25 cm
24
The behavior is different with transmission in opposite directions (see Figure 18b). The interfering signal, which is coupled
into the disturbed line when gate G1 is switched, encounters the high-resistance input of G3 and has significant effects. The
disturbance then runs to the end of line G3–G4 (output at G4). Because the output impedance of this gate typically is
significantly lower than the line impedance, the interfering waveform is reflected with reversed polarity. After its return, the
disturbance will arrive at the input of gate G3. At this point, an interfering pulse can be expected, the length of which is
determined as a result of its doubled signal propagation time on this line. Line length directly influences the magnitude of the
interference. This considerably more critical manifestation of cross talk is known as near-end cross talk. In the example shown,
AHC devices should not have been disturbed. Their switching threshold is typically about 2.5 V, providing an adequate noise
margin. In contrast, the situation is different when G3 (see Figure 18b) has a TTL-compatible input stage with a threshold
voltage of 1.5 V. In this case, the switching threshold of the circuit that is disturbed is clearly exceeded and experience has
shown that this can lead to false triggering. As mentioned previously, the length of the interference pulse, tw, is in accordance
with the doubled signal propagation time on the line in question. With a line having a length of 25 cm and a typical signal
propagation time of 6 ns/m (see Figure 20), the width of the resulting interference pulse is:
tw + 2 @ t @ l + 2 @ 6 nsm @ 25 cm + 3 ns
p (9)
Disturbing Signal
2
Ch1: 2V Ch2: 2V 12.5ns
Figure 20. Near-End Cross Talk With Line Length of 25 cm

There are various ways to reduce cross talk between signal lines. One method is to shorten the length of signal paths. In most
cases, this will solve the problem because most connecting paths on circuit boards are significantly shorter than 25 cm. With
a line length of 12 cm, which covers the majority of connections on circuit boards, signal propagation time, tp, is 0.75 ns; thus,
the width of the interference impulses, tw, that can be expected is 1.5 ns. Under these conditions, at least as far as cross talk
is concerned, there should be no more problems. Also, with appropriate construction of the circuit board, the coupling between
the signal lines can be reduced. One precaution consists of incorporating a continuous ground plane under the signal lines. This
usually is achieved by correct construction of multilayer circuit boards. With these boards, supply voltage layers (VCC and
ground), which lie directly over one another, reduce disturbances on the supply voltage rails and produce significantly less
cross talk.
As shown in Figure 21, screening between critical lines provides a significant improvement in every case. For these
measurements, an additional ground line having a width of 0.6 mm was placed between the signal lines. As a result of the
reduction of the undesired coupling, the amplitude of the coupled signal was reduced. With construction of this kind,
transmission over considerably greater distances also is possible. Having a ground layer under the signal lines and a
signal-return ground line beside the signal line significantly improves the electromagnetic compatibility of the circuit. Both
precautions reduce the area of the effective antenna. In this way, the danger of undesirable radiation of electromagnetic energy
and the sensitivity of the circuit to radiation from outside is reduced.
25
Disturbing Signal

2
Ch1: 2V Ch2: 2V 12.5ns
Figure 21. Near-End Cross Talk With Screening Between the Lines and Line Length of 25 cm
3.2.2 Ground Bounce

Shifts of the ground potential (ground bounce) can have various causes. They can result from voltage drops across the ohmic
resistance of the ground connections of a circuit. These dc voltage drops can be neglected in most cases. The situation is
different with voltage drops that result from rapid current changes in the inductances of the lines. The inductances of the
connections within an integrated circuit have significant implications for proper operation of the device. If one or more outputs
in an integrated circuit are switched simultaneously, voltage drops on the supply voltage connections can influence the potential
at an output that is not involved. The expression used in this case is simultaneous switching noise interference as a result of
switching several outputs at the same time.
This behavior can be explained in more detail by referring to the circuit in Figure 22. The input of inverter Q1/Q2 is switched
from a low to a high logic level while the input of inverter Q3/Q4 is at a high logic level. The current that flows when discharging
capacitor C1 results in a voltage drop across inductances, Lg, of the connections within the package, in this case, primarily the
inductance of the ground connections. This raises the internal ground potential of the integrated circuit. This change of voltage
can be calculated using the following formula:
m + L @ didt (10)
It is this change of voltage that appears with undiminished amplitude at the output of inverter Q3/Q4, and the output potential
should remain constant. Circuits connected to its output may be influenced by this disturbance. The same effect, but with
opposite polarity, occurs when the output in question is at a high logic level and the other outputs of the circuit are switched
from a low to a high logic level.
26
VCC
Lg
Q1 Q3
Lg C1
VCC
Lg
C2
Q2 Q4
Lg
Figure 22. Formation of Shifts of Ground Potential

The interference voltage that can be expected at an output that is in a quiescent state is proportionately higher as the number
of outputs that switched simultaneously is increased. These disturbances commonly are known as simultaneous-switching
noise, and only devices that can switch several outputs simultaneously are affected. Of principal interest are bus-interface
circuits with 4, 8, 16, and even 20 outputs. To evaluate these effects, the measurement setup in Figure 23 has proven to be most
effective. With an n-channel circuit, n – 1 outputs are driven simultaneously, while the remaining outputs stay in a quiescent
state. All outputs have a 50-pF load (load capacitance includes probe and jig capacitance). This capacitance has proven to be
a good choice. Smaller capacitors are not recommended because they would be charged and discharged so rapidly during the
switching process that the current could not reach its maximum value. Conversely, capacitors larger than 50 pF do not give
rise to any higher currents because currents are limited by the drive capability of the circuit under investigation.
VCC To
VCC DIR VCC VCC Oscilloscope
A1 OE Ri = 50 Ω
A2 B1 R2
A3 B2
A4 B3
A5 B4 C C C R1 R2
A6 B5 C R1
A7 B6 C R1
A8 B7 C R1
GND B8 C R1
C R1
C = 47 pF
R1 = 500 Ω
R2 = 450 Ω
Figure 23. Circuit for Evaluating Simultaneous-Switching Noise (8-Bit SN74AHC245, VCC = 5 V)
Figure 24 shows the interference voltage that arises when simultaneously switching several outputs as measured on an
SN74AHC245 bus-interface device in a dual-in-line (N) package. The measured output B2 (see Figure 23) is at a low logic
level, while seven other outputs are switched simultaneously from high to low.
27
VCC = 5.5 V
Seven Outputs Switching
Simultaneously
Output B3 Ch1: 1V Ch2: 1V 5ns
1
Output B2
2
Figure 24. Simultaneous-Switching Noise of SN74AHC245 (VCC = 5.5 V)

With a reduction of the supply voltage, the output current supplied by the circuit is also reduced. The simultaneous-switching
noise (see Figure 25) also is reduced.
VCC = 3.3 V
Seven Outputs Switching
Output B3 Simultaneously
1
Output B2
2
Ch1: 1V Ch2: 1V 5ns
Figure 25. Simultaneous-Switching Noise of SN74AHC245 (VCC = 3.3 V)

A general conclusion can be drawn from the considerations detailed previously that packages intended for surface mounting
(for example, the SO package) should show significantly better behavior than packages that are considerably larger and are
intended for through-hole mounting (DIL package), because their smaller mechanical dimensions should lead to lower values
for the inductances of the internal connections. These conclusions are basically correct, as shown in Table 5. However, if the
inductances of the supply pins of a circuit are reduced, the primary result will be an increase in speed because of improved
voltage response, which is, for example, evidenced by a significantly shorter delay time. For this reason, the interference
voltages measured on SO packages typically are only about 10% to 20% smaller than with DIL packages. Only when critical
inductances are reduced to below about 2 nH will the interference become smaller in proportion to the reduction of the
inductances. Below this value, experience has shown that the speed of the circuit is determined by the limits imposed by the
semiconductor technology.
Table 5. Inductances of a 20-Pin Package
PIN INDUCTANCE AT THE PIN INDUCTANCE IN THE
PACKAGE ENDS OF THE PACKAGE MIDDLE OF THE PACKAGE
(PINS 1, 10, 11, 20) (PINS 5, 6, 15, 16)
DIL 13,7 nH 3,4 nH
SO 4,2 nH 2,4 nH
28
Besides the effect of the voltage drop across the inductances of the supply lines, the amplitude of the noise voltage also is
determined by the cross talk between the pins of the package. One of the consequences is that the measured interference voltage
is at a maximum at those pins that have simultaneously switching outputs on both sides. Conversely, interference voltages at
the ends of the package are significantly lower. When low distortion of the signal is particularly important in specific
applications, the latter situation can be attained by appropriate routing of the signals. As a result of the many supply voltage
connections distributed around the perimeter of Widebus packages (see Figure 26), harmful inductance is reduced in
accordance with the number of parallel electrical connections. Also, supply lines between the signal lines reduce the coupling
between signal lines, further contributing to the low level of interference voltage.
1OE 1 48 2OE
1Y1 2 47 1A1
1Y2 3 46 1A2
GND 4 45 GND
1Y3 5 44 1A3
1Y4 6 43 1A4
VCC 7 42 VCC
2Y1 8 41 2A1
2Y2 9 40 2A2
GND 10 39 GND
2Y3 11 38 2A3
2Y4 12 37 2A4
3Y1 13 36 3A1
3Y2 14 35 3A2
GND 15 34 GND
3Y3 16 33 3A3
3Y4 17 32 3A4
VCC 18 31 VCC
4Y1 19 30 4A1
4Y2 20 29 4A2
GND 21 28 GND
4Y3 22 27 4A3
4Y4 23 26 4A4
4OE 24 25 3OE
Figure 26. Pin Layout of an SN74AHC16244 Widebus Device
3.3 Signal Transmission

The principal purpose of digital devices (besides implementing logic functions) is driving other digital circuits. In some cases,
the devices can be connected on a printed circuit board by printed wires that are only a few millimeters long or in other cases,
a bus line connects several other transmitters and receivers (transceivers). The behavior of AHC circuits under a variety of
operating conditions is discussed in the following paragraphs.
3.3.1 Point-to-Point Connections

For point-to-point connections (see Figure 27), line impedances of 70 Ω to 100 Ω for the conductors on circuit boards can be
assumed. The line is terminated at its end by a circuit that essentially is as shown in Figure 27. For positive voltages, this line
termination has a high resistance and negative-going overshoots are limited by clamping diode D1. Under these conditions,
AHC circuits will have no problem driving the loads connected to them.
29
G1 G2
D1
Figure 27. Typical Point-to-Point Connection

Figure 28 shows the waveform at the beginning and at the end of a line having an impedance, ZO, of about 100 Ω. Because
output impedance of the circuit is about 35 Ω, overshoots and undershoots at the end of the line are sufficiently limited. The
clamping diode at the input of the receiver circuit limits negative voltages to acceptable values.
Beginning of Line
End of Line
2
Ch1: 1V Ch2: 1V 5ns
Figure 28. Waveform in a Point-to-Point Connection

In some cases it may be necessary to take additional precautions to reduce distortion resulting from reflections at the line ends.
The options are to provide an appropriate termination at the end of the line or a matching circuit at the beginning of the line.
a) G1 G2
D1
b) G1 G2
Rt
c) G1 G2
Rt
Ct
d) G1 G2
Rs
Figure 29. Line Termination and Matching
30
The use of clamping diodes (D1 in Figure 29a) is the most effective method of termination, especially when the protection
diodes already incorporated in the input circuits of AHC devices can take on this job. In some cases, limiting positive
overshoots may also be advisable. In this case, additional diodes should be connected between the input and the positive
supply-voltage connection terminal.
The use of termination resistors of the proper value at the end of the line (Rt in Figure 29b) produce ideal waveforms. However,
the higher power dissipation in the termination resistors, which results from this arrangement, usually outweighs the advantage
of the low distortion of the signal.
If a termination at the end of the line cannot be avoided, connecting a termination resistor and a capacitor in series is
recommended. This blocks dc from the terminating network and reduces power consumption of the circuit. Capacitor Ct in
Figure 29c is chosen so that the time constant Rt × Ct is approximately four times the signal propagation time along the line.
A more elegant method of preventing undershoots and overshoots at the end of the line consists of matching the output
impedance of the line driver with a series resistor (Rs in Figure 29d) to the line impedance. This makes optimum matching
possible, without adversely affecting the balancing of the line.
3.3.2 Bus Lines

In addition to point-to-point connections previously mentioned, bus lines have great importance in computer systems. In this
application several transmitter and receiver circuits, or combinations of them as transceivers, are situated along a line (see
Figure 30). Each of these circuits loads the system with its input capacitance, which leads to a significantly longer signal
propagation time (tp ≈ 20 ns/m) and to line impedances, ZO, of about 30 Ω.
Bus
Figure 30. Bus Line

Because line impedances are now the same as, or smaller than, the output impedances of the AHC circuits, no more undershoots
or overshoots occur at the end of the line (see Figure 31). Thus, in general, it is possible to dispense completely with line
terminations. However, because of the unfavorable impedance relationships, four to six signal-propagation time periods will
have passed before the desired logic level is reached. In smaller systems, and with bus lines having a length of only a few
centimeters, this disadvantage is acceptable. The possibility of being able to dispense almost entirely with precautions to
prevent reflections along the line usually completely outweighs the disadvantage of the longer settling time. With longer bus
lines and their resultant longer settling times, voltage levels will exist for a longer time at the inputs of the receivers connected
to the bus, which do not conform to the nominal voltage of the input signal. Figure 31 shows that with the incident wave at
the end of the line, a level has been reached that is only very close to the threshold voltage of the receivers that are connected.
In these circumstances, operation of the circuit without problems cannot be ensured. With longer bus lines and when shorter
settling times are needed, components with better drive capability, such as those from the series SN74LVC and SN74ALVC,
should be used.
31
Zo = 30 Ω
tp = 10 ns
Beginning of Line
End of Line
2
Ch1: 1V Ch2: 1V 25ns
Figure 31. Waveform on a Bus Line
3.4 Behavior With Slow Signal Edges

During the development of the AHC devices, precautions were taken to prevent the internal circuit of the devices from
oscillating with input signals having slow edges. The hysteresis built into the input stages provides for operation without
problems only with signals that are usually delivered by logic circuits. The permissible transition time of the input signal is
given in the data sheet as tB = 10 ns/V. With a signal swing of 5 V, this corresponds to a rise and fall time tr/t < 45 ns. If a typical
rise time of the output signals of AHC circuits of tr/f < 5 ns is assumed, there is a sufficient margin available within the circuit.
In practice, input circuits also can typically process signals with significantly slower edges. Figure 32 shows the behavior of
SN74AHC244 bus-interface device when it is controlled by extremely slow signals (tf ≈ 100 ns). Even under these conditions,
the device shows no tendency to oscillate. However, this example should not tempt the system designer generally to allow
signals with such slow edges. If rise times of the input signal that lie outside the previously given specification can be expected,
the Schmitt trigger, which has been specially developed for this application, always should be used.
VCC = 5 V
RL = 500 Ω
Input Output
1
Ch1: 1V Ch2: 1V 12.5ns
Figure 32. Behavior With Extremely Slow Input Signals
32
4. Special Application Problems
For several years, systems have been designed and manufactured to use two or more supply voltages, 3.3 V and 5 V. The reason
is that, with the introduction of the so-called low-voltage logic circuits, all components needed were not available and, in some
cases, still are not. Therefore, often there was no alternative but to use integrated circuits requiring a supply voltage of 5 V in
systems conceived for a supply voltage of 3.3 V. Special circuit techniques are then required at the interfaces. The problems
involving the use of several supply voltages can be expected to increase in the future. With components having structures of
<0.5 µm being manufactured, still lower operating voltages will be needed, and the problem mentioned above will appear again
in another form. Level conversion and matching will remain an applications problem.
4.1 Level Matching and Conversion

Level matching between parts of circuits that operate with different supply voltages, for example, 3.3 V and 5 V, is very simple
if AHC and AHCT circuits are used (see Figure 33). Protection circuits at the inputs of these components do not contain any
diodes between the input and the supply-voltage connection. The problem of feedback from a part of the circuit that is switched
off does not exist.
VCC = 3.3 V VCC = 5 V
AHCT
Any 3-V ABT, BCT
Logic Circuit ALS, AS, F
etc.
AHC
Any 5-V
LVC
Logic Circuit
LVT
Figure 33. Level Conversion

All circuits designed for VCC = 3.3 V deliver TTL-compatible signal levels at their outputs. When controlling parts of the
circuit that operate at VCC = 5 V, TTL-compatible devices must be used on the 5-V side. Also, these integrated circuits must
not have any of the clamping diodes mentioned above. For this purpose, AHCT devices, as well as all bipolar and BiCMOS
circuits are suitable. HCT and ACT devices should not be used. Level problems should not be expected when choosing suitable
interface circuits for level converters from 5 V to 3 V. With few exceptions, for example, ALVC, devices that have been
designed for VCC = 3.3 V can be controlled with a signal swing of up to 5 V. Also, in this case, care must be taken that only
components are used on the 3.3-V side that do not contain the clamping diodes mentioned above. Circuits from the series
SN74HC, SN74AC, and SN74LV are not suitable for this purpose.
Table 6. Level Converters, 5 V to 3.3 V
FROM TO VCC = 3 V
VCC = 5 V LV LVC ALVC HC AC AHC LVT ALVT
Bipolar TTL No Yes No No No Yes Yes Yes
BiCMOS (ABT, BCT) No Yes No No No Yes Yes Yes
CMOS No Yes No No No Yes Yes Yes
Table 7. Level Converters, 3.3 V to 5 V

TO VCC = 5 V
FROM
VCC = 3.3 V BIPOLAR BiCMOS
AHCT HC AC
TTL (ABT, BCT)
Any circuit Yes Yes Yes No No
33
4.2 Partial Switching Off of Parts of a System
Partial switching off of parts of a system occurs when part of an equipment or installation is switched off (without supply
voltage) while other parts of the equipment remain in normal operation. This operating situation occurs regularly at the
interfaces with other equipment. The same state can be observed frequently within a module that operates with several supply
voltages, for example, 3.3 V and 5 V. Since the individual power supplies are not switched on and off simultaneously and in
coordination, the case in which one or other power supply does not deliver the required voltage must be considered. The
simplified output circuit of an AHC/AHCT device is shown in Figure 8. Diode D1 short circuits the output to ground when
the supply voltage is switched off (VCC = 0 V). Since this diode has a very low resistance (see Figure 11), this operating state
is a defined low-logic level. To this extent, such a circuit provides a defined level. This behavior has disadvantages in bus
systems. If the supply voltage of one of the subscribers connected to the bus is switched off, its output short circuits the complete
bus line. A solution in such a case can be provided only by using bipolar and BiCMOS circuits, which do not have the diodes
shown in Figure 8 in their output stages. In this connection, special mention should be made of the circuits from the SN74ABT
and SN74LVT series.
Many of the interface problems discussed here can be solved very easily using integrated circuits specially developed for this
purpose, such as the bidirectional 8-bit Widebus transceiver SN74LVC4245 (see Figure 34), or its 16-bit Widebus version
SN74ALVC164245. These components have two separate supply-voltage connections [VCCA (5 V) and VCCB (3.3 V)]. In this
way it is possible to solve the problems previously discussed by means of appropriate circuitry within the component. The
engineer developing a system will no longer be concerned with these problems.
(5 V) VCCA 1 24 VCCB (3.3 V)

DIR 2 23 VCCB (3.3 V)
A1 3 22 OE
A2 4 21 B1
A3 5 20 B2
A4 6 19 B3
A5 7 18 B4
A6 8 17 B5
A7 9 16 B6
A8 10 15 B7
GND 11 14 B8
GND 12 13 GND
Figure 34. Pin Layout of SN74LVC4245 Transceiver
34
5. Comparison of AHC and HC Circuits
High-speed CMOS and advanced CMOS circuits have been used for more than a decade in many diverse applications. The
HC circuits feature comparatively simple application rules, and this has encouraged their widespread use. AC circuits are found
in applications in which high speed (i.e., short delay times) and high drive capability are required. The latter advantages must
be weighed against the considerable internal noise (ground bounce, cross talk, etc.) that these circuits generate.
The ideal situation was a combination of the advantages of both logic families. Maintaining the moderate drive capability of
HC circuits, which ensures a low internal-noise level, and incorporating the technical advantages offered by a modern
manufacturing process with structures of 1 µm, the creation of the advanced high-speed CMOS family became a reality. In
addition, particular attention was paid to the increasing trend toward applications operating with supply voltages of only 3.3 V.
A number of improvements were also incorporated that facilitate applications with these components: changes to the input
circuits, and improved ESD protection. The most important parameters are summarized in Table 8.
Table 8. Comparison of the Logic Families
PRODUCT FAMILY
AHC HC LVC AC
Technology CMOS CMOS CMOS CMOS
Structure (gate length) 1 µm 2–3 µm 0.8 µm 1 µm
5-V tolerant? Yes No Yes No
Gate and bus-interface circuits available? Yes Yes Yes Yes
Widebus circuits (16 bit) available? Yes No Yes Yes
Bus-hold circuit? No No Yes No
VCC = 5 V VCC = 3.3 V VCC = 5 V VCC = 3.3 V VCC = 5 V
Supply current, ICC (’245) 40 µA 40 µA 80 µA 10 µA 40 µA
Output current –8/8 mA –4/4 mA –6/6 mA –24/24 mA –24/24 mA
Delay time, tpd(max) (’245) 6.5 ns 10 ns 26 ns 7.5 ns 9 ns
Input capacitance, Ci (’245) 2.5 pF 4.6 pF 3.3 pF 4.5 pF
Input/output capacitance, Cio (’245) 8 pF 16 pF 5.4 pF 15 pF
6. Package Construction
The trend toward further miniaturization of equipment and appliances is continuing, as indicated by the huge range of portable
battery-operated equipment now available. Manufacturers of semiconductors are making a major contribution to this trend,
because miniaturization can be realized only with smaller packages and corresponding progress in manufacturing technology.
System designers always should remain aware of the problems involved in the use of modern packages.
Special manufacturing techniques when encapsulating the integrated circuits (chips) in their packages are employed to
overcome problems that can occur. Everything possible must be done to eliminate humidity inside the package. This humidity
has less to do with possible corrosion of the integrated circuits because, for the last 20 years, surfaces of all chips have been
passivated with a glass layer (nitride), and possible corrosion has lost its significance. Any humidity trapped in the package
shows up as a problem with the soldering techniques, for example, flow-soldering baths, now used for surface-mounted
components. During the soldering process, humidity can vaporize and cause the package to burst (the “popcorn” effect).
Immediately after manufacture, the devices must be stored in a special packing (Dry Pack) and, in some cases, in
air-conditioned rooms.
The handling of ever-smaller packages presents a problem for the manufacturing engineer. With a pin spacing of only 0.4 mm,
such as that attained with the thin shrink small-outline packages (TSSOP), exceptional demands are placed on soldering
techniques, such as the accuracy with which the components are placed in assembly and the precise control of the soldering
process. In the past, difficulty in controlling the soldering process often has been responsible for delaying the introduction of
smaller packages.
35
Although maximum permissible power dissipation of the small packages is of secondary significance only for the AHC
circuits, miniaturization of components obviously has reduced their ability dissipate heat. The relationships are explained in
Table 9. With AHC circuits in the middle-speed class, thermal impedance usually is of little importance; these devices have
an extremely low quiescent current drain. Also, in the frequency range up to about 10 MHz, in which these components should
be used, the dynamic power dissipation is kept within reasonable limits. In individual cases, for example, at high clock
frequencies or with the use of Widebus circuits, the system designer should calculate the power dissipation that can be expected
to prevent overloading of these components.
Table 9. Thermal Impedance of 20-Pin Packages
PACKAGE
PARAMETER UNIT
DIL SOP SSOP TSSOP TVSOP
Thermal impedance, θJA 67 96.6 104.2 148.9 179.5 °C/W
Figure 35 provides mechanical dimensions of the various packages in which AHC/AHCT families are available. This table
is not all inclusive because the many variants of different numbers of package pins from 14 to 56 cannot be shown in the space
available. The spectrum of available packages extends from the very well-known and much-used dual-in-line package (DIL),
through the well-established small outline package (SO) and up to the thin very small-outline package (TVSOP). With a pin
spacing of only 0.4 mm (16 mil) and a height of 1.2 mm, this package is ideal for use in chip cards.
24-Pin SSOP
24-Pin SOIC
Height = 2 mm
Height = 2.65mm 24-Pin SSOP Volume = 140 mm3
24-Pin SOIC Volume = 437 mm3 Area = 70 mm2 Lead pitch = 0.65 mm
Area = 165 mm2 Lead pitch = 1.27 mm
24-Pin TSSOP
48-Pin SSOP
Height = 1.1 mm
24-Pin TSSOP Volume = 59 mm3
Height = 2.74 mm
48-Pin SSOP Volume = 469 mm3
24-Pin TVSOP
Height = 1.2 mm
48-Pin TSSOP 24-Pin TVSOP Volume = 38 mm3
Height = 1.1 mm 5-Pin SOT-23 (DBV)

48-Pin TSSOP Volume = 119 mm3
Height = 1.45 mm
5-Pin SOT-23 Volume = 12 mm3
48-Pin TVSOP Area = 9 mm2 Lead pitch = 0.95 mm
5-Pin SC-70 (DCK)

Height = 1.2 mm
48-Pin TVSOP Volume = 75 mm3
Area = 63 mm2 Lead pitch = 0.4 mm 5-Pin SC-70 Height = 1.1 mm
Area = 5 mm2 Volume = 5 mm3
Lead pitch = 0.65 mm
Figure 35. Selected Package Dimensions
36
6.1 Single-gate Logic
System designers often are confronted with the need for another gate or inverter to complete the design. The reason for this
additional component may be, for example, that a signal from one circuit can supply the logic level needed by the subsequent
circuit only after inversion. Or, at the last moment, it may be realized that the logical combination of two signals (AND, OR)
is needed to implement the required function. Finally, it can be determined that the input signal needs to be amplified or that
a Schmitt trigger is required to make an edge steeper so that a following circuit will operate properly.
In the past when this situation arose, it was necessary to incorporate an additional 14- or 16-pin package, which might have
been only 25% utilized. Besides the cost of this additional component, the space required becomes of great importance when
equipment and systems need to be miniaturized. To meet this need, the Microgate Logic and Picogate Logic packages have
been developed. The Microgate Logic circuits are supplied in a 5-pin SOT-23 package, and the Picogate Logic circuits in the
still smaller SC-70 package (Figure 35). The dimensions of Microgate Logic conform to those of the SOT-23, which has long
been used for small-signal transistors and has been extended with two additional pins. It should be emphasized that the 5-pin
SOT-23 package originally was introduced for use with analog circuits. In analog circuit practice there are far fewer
opportunities to construct circuits (such as amplifiers) with standardized components than is the case in digital circuitry where
all circuits are basically derived from gates or inverters. Because amplifiers or comparators are chosen for specific functions
in the application, the SOT-23 package containing the required function is the logical choice.
Because the SOT-23 package has only five pins, of which two need to be reserved for the supply voltage, the functions that
can be integrated into them are limited: AND, NAND, OR, NOR, EXOR gates, and inverters. Other functions, such as the
Schmitt trigger, are available that are particularly needed in interfaces. An available often-used function is the unbuffered
inverter, designated as ’04U (U = unbuffered). This device has applications in oscillators, and can be used as an analog
wideband amplifier.
7. Summary
With their advanced high-speed CMOS logic family, TI has created a series of components that combines the advantages of
many integrated circuits that are already well known, without having to accept many of their disadvantages:
• All CMOS circuits have low power requirements in common.
• Delay times have been much improved in comparison with HC devices.
• Values have been reached that were previously possible only with AC devices.
The high driveability of the latter family has not been incorporated – this is reserved for the AC, LVC, and ALVC families –
but instead they have been limited in this respect to values that are usual for high-speed CMOS. From the point of view of
interference that integrated circuits themselves generate, these components are easy to use. This ease of use extends from their
dynamic-power dissipation and low cross talk between signal lines to the precautions necessary to ensure the electromagnetic
compatibility of a circuit or system.
8. References
1. Texas Instruments, AHC/AHCT, HC/HCT, and LV CMOS Logic Data Book, literature number SCLD004.
2. Texas Instruments, Semiconductor Group Package Outlines Reference Guide, literature number SSYU001.
3. Fachverband Bauelemente der Elektronik: Messung der EME von integrierten Schaltungen (Professional
Association for Electronic Components: Measuring the EME of Integrated Circuits).
4. Texas Instruments, Digital Design Seminar, literature number SDYDE01A.
37
38
Appendix A
Product Portfolio
1
2
ADDITIONAL LITERATURE
For more information on the AHC product line, please visit:
http://www.ti.com/sc/ahc
http://www.ti.com/sc/littlelogic
If you would like additional AHC literature, please call 1-800-477-8924 and ask for the following items:
TITLE LITERATURE NUMBER
Logic Selection Guide and Data Book CD-ROM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SCBC001
Logic Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDYU001
Logic Solutions Overview Brochure (1998) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SCAB003
AHC/AHCT Logic Advanced High-Speed CMOS Data Book . . . . . . . . . . . . . . . . . . . . . . . SCLD003
Design Considerations for Logic Products Application Book (1997) . . . . . . . . . . . . . . . . . SDYA002
Design Considerations for Logic Products Application Book Volume 2 (1999) . . . . . . . . SDYA018
PRODUCT AVAILABILITY
Refer to the following codes for column entries on the following pages.
military package description and availability

CDIP (ceramic dual-in-line package) CFP (ceramic flat package) CQFP (ceramic quad flat package)
J = 14/16/20 pins WA = 14 pins (small outline) HV = 68 pins
JT = 24/28 pins W = 14/16/20 pins HT = 84 pins
WD = 48/56 pins HS = 100 pins
schedule CPGA (ceramic pin grid array)
HFP = 132 pins
✔ = Now GB = 68/84/120 pins LCCC (leadless ceramic chip carrier)

FK = 20/28 pins
✛ = Planned
★ = Please see the corresponding device data sheet for correct military nomenclature
or visit http://www.ti.com/sc/docs/military for TI military product information.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 A–3

APPENDIX A
AHC
NO. AVAILABILITY LITERATURE

DEVICE DESCRIPTION
PINS MIL PDIP SOIC SOT SSOP TSSOP TVSOP REFERENCE
SN74AHC00 14 Quad 2-Input NAND Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS227E
SN74AHC02 14 Quad 2-Input NOR Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS254G
SN74AHC04 14 Hex Inverters ✔ ✔ ✔ ✔ ✔ ✔ SCLS231I
SN74AHCU04 14 Unbuffered Hex Inverters ✔ ✔ ✔ ✔ ✔ ✔ SCLS234G
SN74AHC05 14 Hex Inverters with Open-Drain Outputs ✔ ✔ ✔ ✔ ✔ SCLS357E
SN74AHC08 14 Quad 2-Input AND Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS236D
SN74AHC14 14 Hex Schmitt-Trigger Inverters ✔ ✔ ✔ ✔ ✔ ✔ SCLS238E
SN74AHC32 14 Quad 2-Input OR Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS247D
SN74AHC74 14 Dual D-Type Flip-Flops with Set and Reset ✔ ✔ ✔ ✔ ✔ ✔ SCLS255F
SN74AHC86 14 Quad 2-Input Exclusive-OR Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS249E
SN74AHC123A 16 Dual Retriggerable Monostable Multivibrators with Reset ✔ ✔ ✔ ✔ ✔ ✔ SCLS352D
SN74AHC125 14 Quad Bus Buffers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS256F
SN74AHC126 14 Quad Bus Buffers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS257I
SN74AHC132 14 Quad 2-Input NAND Gates with Schmitt-Trigger Inputs ✔ ✔ ✔ ✔ ✔ SCLS365D
SN74AHC138 16 3-to-8 Line Inverting Decoders/Demultiplexers ✔ ✔ ✔ ✔ ✔ ✔ SCLS258H
SN74AHC139 16 Dual 2-to-4 Line Decoders/Demultiplexers ✔ ✔ ✔ ✔ ✔ SCLS259G
SN74AHC157 16 Quad 2-to-4 Line Data Selectors/Multiplexers ✔ ✔ ✔ ✔ ✔ ✔ SCLS345E
SN74AHC158 16 Quad 2-to-4 Line Data Selectors/Multiplexers ✔ ✔ ✔ ✔ ✔ SCLS346D
SN74AHC240 20 Octal Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS251E
SN74AHC244 20 Octal Buffers and Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS226G
SN74AHC245 20 Octal Bus Transceivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS230F
SN74AHC273 20 Octal D-Type Flip-Flops with Clear ✔ ✔ ✔ ✔ ✔ ✔ SCLS376D
SN74AHC367 16 Hex Buffer/Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS424C
SN74AHC373 20 Octal Transparent D-Type Latches with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS235F
SN74AHC374 20 Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS240F
SN74AHC540 20 Inverting Octal Buffers and Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS260G
SN74AHC541 20 Octal Buffers and Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS261J
SN74AHC573 20 Octal Transparent D-Type Latches with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS242H
SN74AHC574 20 Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS244F
SN74AHC594 16 8-Bit Shift Registers with Output Registers ✔ ✔ ✔ ✔ SCLS423B
SN74AHC595 16 8-Bit Shift Registers with 3-State Output Registers ✔ ✔ ✔ ✔ ✔ SCLS373D
SN74AHC16240 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS326F
SN74AHC16244 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS327F
SN74AHC16373 48 16-Bit Transparent D-Type Latches with 3-State Outputs ✔ ✔ ✔ SCLS329F
commercial package description and availability

LFBGA (low-profile fine-pitch ball grid array) PLCC (plastic leaded chip carrier) SOIC (small-outline integrated circuit) TSSOP (thin shrink small-outline package)
GKE = 96 pins FN = 20/28/44/68/84 pins D = 8/14/16 pins PW = 8/14/16/20/24/28 pins
GKF = 114 pins QFP (quad flatpack) DW = 16/20/24/28 pins DGG = 48/56/64 pins
PDIP (plastic dual-in-line package) RC = 52 pins (FB only) SOP (small-outline package) TVSOP (thin very small-outline package)
P = 8 pins PH = 80 pins (FIFO only) PS = 8 pins DGV = 14/16/20/24/48/56 pins
N = 14/16/20 pins PQ = 100/132 pins (FIFO only) NS = 14/16/20/24 pins DBB = 80 pins
NT = 24/28 pins TQFP (plastic thin quad flatpack) QSOP (quarter-size outline package) SOT (small-outline transistor)
PAH = 52 pins DBQ = 16/20/24 pins DBV = 5 pins
PAG = 64 pins (FB only) DCK = 5 pins
schedule PM = 64 pins SSOP (shrink small-outline package)
PN = 80 pins DB = 14/16/20/24/28/30/38 pins
✔ = Now PCA, PZ = 100 pins (FB only) DBQ = 16/20/24
✛ = Planned PCB = 120 pins (FIFO only) DL = 28/48/56 pins
A–4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPENDIX A
AHC

DEVICE DESCRIPTION
SN74AHC16374 48 16-Bit Edge-Triggered D-Type Flip-Flops with 3-State Outputs ✔ ✔ ✔ SCLS330F
SN74AHC16540 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS331E
SN74AHC16541 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS332E
SN74AHC1G00 5 Single 2-Input NAND Gates ✔ SCLS313F
SN74AHC1G02 5 Single 2-Input NOR Gates ✔ SCLS342E
SN74AHC1G04 5 Single Inverters ✔ SCLS318H
SN74AHC1GU04 5 Single Inverters ✔ SCLS343I
SN74AHC1G08 5 Single 2-Input AND Gates ✔ SCLS314F
SN74AHC1G125 5 Single Bus Buffers with 3-State Outputs ✔ SCLS377D
SN74AHC1G126 5 Single Bus Buffers with 3-State Outputs ✔ SCLS379C
SN74AHC1G14 5 Single Schmitt-Trigger Inverters ✔ SCLS321G
SN74AHC1G32 5 Single 2-Input OR Gates ✔ SCLS317G
SN74AHC1G86 5 Single 2-Input Exclusive-OR Gates ✔ SCLS323F

APPENDIX A
AHCT

DEVICE DESCRIPTION
SN74AHCT00 14 Quad 2-Input NAND Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS229G
SN74AHCT02 14 Quad 2-Input NOR Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS262H
SN74AHCT04 14 Hex Inverters ✔ ✔ ✔ ✔ ✔ ✔ SCLS232J
SN74AHCT08 14 Quad 2-Input AND Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS237H
SN74AHCT14 14 Hex Schmitt-Trigger Inverters ✔ ✔ ✔ ✔ ✔ ✔ SCLS246L
SN74AHCT32 14 Quad 2-Input OR Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS248H
SN74AHCT74 14 Dual D-Type Flip-Flops with Set and Reset ✔ ✔ ✔ ✔ ✔ ✔ SCLS263J
SN74AHCT86 14 Quad 2-Input Exclusive-OR Gates ✔ ✔ ✔ ✔ ✔ ✔ SCLS250I
SN74AHCT123A 16 Dual Retriggerable Monostable Multivibrators with Reset ✔ ✔ ✔ ✔ ✔ ✔ SCLS420C
SN74AHCT125 14 Quad Bus Buffers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS264K
SN74AHCT126 14 Quad Bus Buffers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS265L
SN74AHCT132 14 Quad 2-Input NAND Gates with Schmitt-Trigger Inputs ✔ ✔ ✔ ✔ ✔ SCLS366E
SN74AHCT138 16 3-to-8 Line Inverting Decoders/Demultiplexers ✔ ✔ ✔ ✔ ✔ ✔ SCLS266I
SN74AHCT139 16 Dual 2-to-4 Line Decoders/Demultiplexers ✔ ✔ ✔ ✔ ✔ ✔ SCLS267J
SN74AHCT157 16 Quad 2-to-4 Line Data Selectors/Multiplexers ✔ ✔ ✔ ✔ ✔ SCLS347H
SN74AHCT158 16 Quad 2-to-4 Line Data Selectors/Multiplexers ✔ ✔ ✔ ✔ ✔ SCLS348G
SN74AHCT240 20 Octal Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS252H
SN74AHCT244 20 Octal Buffers and Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS228I
SN74AHCT245 20 Octal Bus Transceivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS233H
SN74AHCT273 20 Octal D-Type Flip-Flops with Clear ✔ ✔ ✔ ✔ ✔ SCLS375C
SN74AHCT367 16 Hex Buffers/Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ SCLS418C
SN74AHCT373 20 Octal Transparent D-Type Latches with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS239J
SN74AHCT374 20 Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS241I
SN74AHCT540 20 Inverting Octal Buffers and Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS268I
SN74AHCT541 20 Octal Buffers and Line Drivers with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS269L
SN74AHCT573 20 Octal Transparent D-Type Latches with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS243K
SN74AHCT574 20 Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs ✔ ✔ ✔ ✔ ✔ ✔ SCLS245I
SN74AHCT594 16 8-Bit Shift Registers with Output Registers ✔ ✔ ✔ ✔ SCLS417B
SN74AHCT595 16 8-Bit Shift Registers with 3-State Output Registers ✔ ✔ ✔ ✔ SCLS374E
SN74AHCT16240 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS333H
SN74AHCT16244 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS334H
SN74AHCT16245 48 16-Bit Bus Transceivers with 3-State Outputs ✔ ✔ ✔ SCLS335H
SN74AHCT16373 48 16-Bit Transparent D-Type Latches with 3-State Outputs ✔ ✔ ✔ SCLS336G
SN74AHCT16374 48 16-Bit Edge-Triggered D-Type Flip-Flops with 3-State Outputs ✔ ✔ ✔ SCLS337G
commercial package description and availability

LFBGA (low-profile fine-pitch ball grid array) PLCC (plastic leaded chip carrier) SOIC (small-outline integrated circuit) TSSOP (thin shrink small-outline package)
GKE = 96 pins FN = 20/28/44/68/84 pins D = 8/14/16 pins PW = 8/14/16/20/24/28 pins
GKF = 114 pins QFP (quad flatpack) DW = 16/20/24/28 pins DGG = 48/56/64 pins
PDIP (plastic dual-in-line package) RC = 52 pins (FB only) SOP (small-outline package) TVSOP (thin very small-outline package)
P = 8 pins PH = 80 pins (FIFO only) PS = 8 pins DGV = 14/16/20/24/48/56 pins
N = 14/16/20 pins PQ = 100/132 pins (FIFO only) NS = 14/16/20/24 pins DBB = 80 pins
NT = 24/28 pins TQFP (plastic thin quad flatpack) QSOP (quarter-size outline package) SOT (small-outline transistor)
PAH = 52 pins DBQ = 16/20/24 pins DBV = 5 pins
PAG = 64 pins (FB only) DCK = 5 pins
schedule PM = 64 pins SSOP (shrink small-outline package)
PN = 80 pins DB = 14/16/20/24/28/30/38 pins
✔ = Now PCA, PZ = 100 pins (FB only) DBQ = 16/20/24
✛ = Planned PCB = 120 pins (FIFO only) DL = 28/48/56 pins

APPENDIX A
AHCT

DEVICE DESCRIPTION
SN74AHCT16540 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS338G
SN74AHCT16541 48 16-Bit Buffers/Drivers with 3-State Outputs ✔ ✔ ✔ SCLS339G
SN74AHCT1G00 5 Single 2-Input NAND Gates ✔ SCLS316H
SN74AHCT1G02 5 Single 2-Input NOR Gates ✔ SCLS341G
SN74AHCT1G04 5 Single Inverters ✔ SCLS319I
SN74AHCT1G08 5 Single 2-Input AND Gates ✔ SCLS315H
SN74AHCT1G14 5 Single Schmitt-Trigger Inverters ✔ SCLS322J
SN74AHCT1G32 5 Single 2-Input OR Gates ✔ SCLS320H
SN74AHCT1G86 5 Single 2-Input Exclusive-OR Gates ✔ SCLS324H
SN74AHCT1G125 5 Single Bus Buffers with 3-State Outputs ✔ SCLS378E
SN74AHCT1G126 5 Single Bus Buffers with 3-State Outputs ✔ SCLS380E

APPENDIX A
AHCT

AHC/AHCT Designer's Guide: September 1998

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W O R L D L E A D E R I N L O G I C P R O D U C T S

AHC/AHCT Designer’s Guide

Graduate to new performance levels with AHC . . .

Printed on Recycled Paper

TI warrants performance of its semiconductor products to the specifications applicable at the

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE

Copyright  2000, Texas Instruments Incorporated

TI and Widebus are trademarks of Texas Instruments Incorporated.

Your Next Choice: Advanced High-Speed CMOS Logic (AHC) 1

Speed Up Your System With AHC/AHCT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Advanced High-Speed Logic Devices 9

Appendix A: Product Portfolio A–1

Additional Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A–3

Speed Up Your System With AHC/AHCT

AC/ACT Advanced CMOS HC/HCT High-Speed CMOS

’AHC244 VCC = 3.3 V

Triple the Speed, Same Drive, But Less Power Consumption

Switching Characteristics Comparison

Low Switching Noise

VOL(V) (typ) = –0.2 V

Typical Widebus Example

SSOP (DB/DL) TSSOP (DGG/PW) TVSOP (DGV)

Logic Function Lead Pitch:

Logic Function Lead Pitch:

2.1 Input Circuit

Figure 1. Simplified Input of an AHC Device

Figure 2. Transfer Characteristics of AHC Devices

Figure 3. Transfer Characteristics of AHCT Devices

Figure 4. Transfer Characteristics of the SN74AHC14 Schmitt Trigger

Figure 5. Transfer Characteristics of a TTL-Compatible SN74AHCT Schmitt Trigger

Figure 6. Supply Current as a Function of Input Voltage

Figure 7. Input Characteristic of an AHC Device

Figure 8. Output of an AHC Device

I OL – Output Low Current – mA

I OL – Output Low Current – mA

–10 TA = 25°C 20 TA = 25°C

Figure 9. Output Characteristics of an AHC Device

t pd – Propagation Delay Time – ns

Figure 10. Capacitive Loading Effect on AHC Devices

2.3.1 Electrostatic Discharge (ESD)

Figure 12. ESD Protection Circuits

2.3.2 Latch-Up Protection

Figure 13. Parasitic Transistors in a CMOS Device

Figure 14. Guard Rings in a CMOS Device

3.1 Power Dissipation

Figure 15. Current Spikes When Switching an AHC Output

I CCS +C @V @fpd CC I (2)

VCC = Supply voltage (V)

P ges + 1.47 mWńMHz (8)

Figure 16. Power Dissipation of SN74AHC244 Bus-Interface Device (VCC = 5 V)

Figure 17. Power Dissipation of SN74AHC244 Bus-Interface Device (VCC = 3.3 V)

3.2 Quality of the Waveforms

a) Transmission in Same Direction

b) Transmission in Opposite Direction

Figure 18. Power Transmission in Same and Opposite Directions

Signal on Disturbed Line “High”

Signal on Disturbed Line “Low”

Figure 19. Far-End Cross Talk With Line Length of 25 cm

Signal on Disturbed Line “High”