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    Switching Diode: 1N4148 / 1N4150 / 1N4448 / 1N914B

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    Emilio García
    This document provides information on switching diodes, specifically models 1N4148, 1N4150, 1N4448, and 1N914B. These diodes feature a glass sealed envelope, high speed switching capabilities, and high reliability. They have an epitaxial planar silicon construction and absolute maximum ratings including forward voltages up to 100V and forward currents up to 450mA. Electrical characteristics include forward voltage values between 0.54V to 1V and reverse leakage currents below 5μA.

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    Switching Diode: 1N4148 / 1N4150 / 1N4448 / 1N914B

    Uploaded by

    Emilio García
    14 views2 pages
    This document provides information on switching diodes, specifically models 1N4148, 1N4150, 1N4448, and 1N914B. These diodes feature a glass sealed envelope, high speed switching capabilities, and high reliability. They have an epitaxial planar silicon construction and absolute maximum ratings including forward voltages up to 100V and forward currents up to 450mA. Electrical characteristics include forward voltage values between 0.54V to 1V and reverse leakage currents below 5μA.

    Original Description:

    Swhitching diode datasheet

    Original Title

    trr-1n914b-rohm

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    © © All Rights Reserved

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    This document provides information on switching diodes, specifically models 1N4148, 1N4150, 1N4448, and 1N914B. These diodes feature a glass sealed envelope, high speed switching capabilities, and high reliability. They have an epitaxial planar silicon construction and absolute maximum ratings including forward voltages up to 100V and forward currents up to 450mA. Electrical characteristics include forward voltage values between 0.54V to 1V and reverse leakage currents below 5μA.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views2 pages

    Switching Diode: 1N4148 / 1N4150 / 1N4448 / 1N914B

    Uploaded by

    Emilio García
    This document provides information on switching diodes, specifically models 1N4148, 1N4150, 1N4448, and 1N914B. These diodes feature a glass sealed envelope, high speed switching capabilities, and high reliability. They have an epitaxial planar silicon construction and absolute maximum ratings including forward voltages up to 100V and forward currents up to 450mA. Electrical characteristics include forward voltage values between 0.54V to 1V and reverse leakage currents below 5μA.

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    © All Rights Reserved
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    1N4148 / 1N4150 / 1N4448 / 1N914B

    Diodes

    Switching diode
    1N4148 / 1N4150 / 1N4448 / 1N914B
    ∗This product is available only outside of Japan.

    !Applications !External dimensions (Units : mm)


    High-speed switching

    !Features CATHODE BAND (BLACK)


    1) Glass sealed envelope. (GSD) Type No. φ 0.5±0.1

    2) High speed.
    3) High reliability. C A

    φ 1.8±0.2
    29±1 3.8±0.2 29±1

    !Construction ROHM : GSD


    Silicon epitaxial planar EIAJ : −
    JEDEC : DO-35

    !Absolute maximum ratings (Ta = 25°C)


    IFSM
    VRM VR IFM IO IF 1µs P Tj Topr Tstg
    Type
    (V) (V) (mA) (mA) (mA) (A) (mW) (°C) (°C) (°C)

    1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200

    1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200


    1N4448
    (1N914B) 100 75 450 150 200 2 500 200 −65~+200 −65~+200

    !Electrical characteristics (Ta = 25°C)


    VF (V) BV (V) Min. IR (µA) Max. Cr (pF) trr (ns)
    Type @25°C @150°C VR=6V
    @ @ @ @ @ @ @ @ @ @ @ @ @ @ VR=0 IF=10mA
    0.1mA 0.25mA 1mA 2mA 5mA 10mA 20mA 30mA 50mA 100mA 200mA 250mA 5µA 100µA VR (V) VR (V) f=1MHz RL=100Ω
    0.025 20
    1N4148 75 100 50.0 20 4 4
    1.0 5.0 75
    0.54 0.66 0.76 0.82 0.87
    1N4150 − 50 0.1 50 100.0 50 2.5 4
    0.62 0.74 0.86 0.92 1.0
    0.62 0.025 20
    1N4448
    − 100 50.0 20 4 4
    (IN914B) 5.0 75
    0.72 1.0
    The upper figure is the minimum VF and the lower figure is the maximum VF value.
    1N4148 / 1N4150 / 1N4448 / 1N914B
    Diodes

    !Electrical characteristic curves (Ta = 25°C)


    100 3.0

    CAPACITANCE BETWEEN TERMINALS : CT (pF)


    50 100°C f=1MHz
    3000 2.5
    FORWARD CURRENT : IF (mA)

    REVERSE CURRENT : IR (nA)


    20 1000
    70°C 2.0
    10
    300
    5 1.5
    50°C
    100
    2
    30 1.0
    Ta=25°C
    1
    °C
    25°C

    Ta=25°C
    Ta=75°C

    Ta=−25

    10 0.5
    Ta=1

    0.5

    3
    0.2 0
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 0 5 10 15 20 25 30
    FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V)

    Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between


    terminals characteristics

    3 100
    REVERSE RECOVERY TIME : trr (ns)

    PULSE
    VR=6V
    SURGE CURRENT : Isurge (A)

    50 Single pulse
    Irr=1/10IR

    2 20

    10

    1 5

    0 1
    0 10 20 30 0.1 1 10 100 1000 10000
    FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms)

    Fig. 4 Reverse recovery time Fig. 5 Surge current characteristics


    characteristics

    0.01µF D.U.T.

    5Ω
    PULSE GENERATOR SAMPLING
    50Ω
    OUTPUT 50Ω OSCILLOSCOPE

    INPUT

    100ns

    OUTPUT
    trr
    0
    0.1IR
    IR

    Fig. 6 Reverse recovery time (trr) measurement circuit

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