Industrial Automation 1

INDUSTRIAL AUTOMATION
For 6th semester diploma in electronics and

communication engineering
Under the guidance of
Latha
chandan.G.K
JAIN POLYTECHNIC, DVG INDUSTRIAL AUTOMATION6TH SEMESTER
Contents:-
Content 1-4
Power electronics devices 5 – 21
Triggering and commutation of SCR 22 – 31
Choppers, inverters and cycloconverters 32 -
Applications of thyristors
Programmable logic controller (PLC)
VCS and SCADA system
CHANDAN.G.K 1
CHANDAN.G.K 2
Course Content
Unit 1: Power Electronic Devices
Power Electronics-Introduction, need for power devices, features of Power

diode, Power BJT, IGBT and MOSFET. SCR- Symbol, constructional features,
two-transistor analogy, V-I Characteristics, specifications and ratings. Compare
SCR with DIAC and TRIAC. Controlled rectifiers- Single phase half-wave
controlled rectifier, single phase full-wave bridge controlled rectifier (only
resistive load), importance of freewheeling diode. Discuss feasibility of
Germanium Controlled Rectifier controlled applications.
Unit 2: Switching of SCR
Triggering- Definition and need, triggering circuits: R-Triggering, RC–

triggering, Pulse triggering using UJT relaxation oscillators. Commutation:
Need, discussion of natural and forced commutation of SCR. Discussion of
resonant commutation, auxiliary commutation and complementary commutation.
Protection of SCR-Snubbed circuit.
Unit 3: Choppers, Inverters and Cycloconverters
Chopper-Definition, working principle, duty cycle, chopper control schemes,

step-up and step-down chopper, chopper classifications - first quadrant, second
quadrant, two quadrant and four quadrant choppers and applications. Inverters-
Definition, working principle and types. Half-bridge inverter, full-bridge inverter,
series inverter, variable dc link inverter, voltage source and current source
inverters. PWM techniques used in inverters and applications. Cycloconverters-
definition, classification, working of single phase to single phase midpoint
cycloconverter, applications (for resistive load only).
Unit 4: Applications of Thyristors
Photo-electric Control of SCR, Light Dimmer circuit using DIAC and TRIAC,
Burglar alarm circuit. Need for electronic control of motors, armature voltage
CHANDAN.G.K 3
control and field control method for speed control of DC shunt motor. Speed
control of DC motors using dual converters, speed control of Induction motor.
Unit 5: Programmable Logic Controllers
Introduction to PLC, block diagram of overall PLC system, PLC scanning. PLC
Programming-Ladder diagram, programming relation to digital logic gates,
Boolean algebra–simple examples, PLC register basics. PLC timer-retentive and
delay timer functions. PLC counter-up/down counters with examples. Basic
number comparison functions. PID control of continues process with respect to
PLC-PID.
Unit 6: DCS and SCADA System
Data Control System-Introduction, features, hierarchical architecture, advantages

and applications. Introduction to HMI/MMI. SCADA-Introduction, background,
definition, features, typical SCADA system. SCADA architecture-first to fourth
generation. Introduction to SCADA hardware & software, interfacing PLC with
SCADA, applications of SCADA. Comparison of PLC and SCADA.
CHANDAN.G.K 4
UNIT-1
Power Electronic Devices
Need of power electronics devices:-

 The power electronics deals with the study of electronic circuits intended to
control the flow of high electrical energy with high efficiency.
 All the power electronics circuits manages the flow of electrical energy
between the source and load.
Power BJT
Construction:-
 The bipolar junction transistor is a 3 terminal semiconductor devices, in

which the operation depends on the interaction of both the majority and
minority carrier and hence the name bipolar.
CHANDAN.G.K 5
 The BJT is made up of silicon or germanium crystal in which a thin layer of

P type silicon sandwich between the two layers of N type material are
called as NPN transistor.
 Similarly in the PNP transistor, the layer of N type material are sandwich
between the two layers of P type material.
 Figure shows the construction and symbol of NPN and PNP transistor.
 The three terminal of transistor are emitter, base and collector and the
conventional current flow to the EB junction.
 The emitter heavily doped so it can inject a large number of charged
carriers into the base.
 The base is lightly doped and very thin and it passes the injected charge
carriers from the emitter to the collector.
 The collector is moderately doped the injected carriers combine the base
before reaching the collector.
Switching characteristics:-
 The BJT is a current control device and requires the base current for the
collector current to flow.
 When the transistor from the OFF state to ON state, the base emitter
junction must be forward biased and the base current be increased.
 When the transistor is turned OFF, the base emitter junction must be
reverse biased and base current reduces to the zero. Figure shows the
typical characteristics and ideal switching characteristics of NPN transistor.
CHANDAN.G.K 6
Application:-
1. It is used in DC choppers, inverters and UPS.
Insulated gate bipolar transistor (IGBT):-
 A IGBT combines the merits of BJT and MOSFET.

 The BJT has a lower conduction losses in the ON state and the MOSFET
turned ON and OFF much faster.
 The IGBT has a high impedance gate, which require a small amount of
energy to switch the device.
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 The turn ON and turn OFF timer are order of 1 micro sec with the voltage
rating of 1700V and 1200Amps.
 Figure b shows the basic structure of IGBT.
 It has P+ layer substrate called collector.
 When the gate is positive with respective to the emitter, the gate – emitter
voltage is more than the threshold voltage of IGBT and N – channel is
formed in the P – region.
 This N – channel short the circuits of N– with N+ emitter region.
 An electron movement in the N – channel causes hole injection from P+
substrate region into the N- layer and establishes a forward current.
IGBT characteristics:-
CHANDAN.G.K 8
 Figure shows the circuit diagram to find the characteristics of IGBT.

 Figure a shows the static VI characteristics of IGBT.
 Figure b shows the transfer characteristics of IGBT.
 Figure c shows the ideal characteristics of IGBT.
 When the IGBT is turned ON by increasing the gate voltage, so that gate
emitter voltage is greater than the threshold voltage VGET.
 When the IGBT is turned OFF by decreasing the gate voltage so that gate
emitter voltage is lesser than the threshold voltage VGET.
Note:-
CHANDAN.G.K 9
1. Turn ON – G increase – VGE increase with increase in VGET.

2. Turn OFF – G decrease – VGE decrease with decrease in VGET.
Advantages:-
1. Lower switching losses.
2. Lower gate drain requirements.
3. Greater efficiency with less size and less cost.
Disadvantages:-
1. It is more expensive than BJT.
Applications:-
1. It is used in AC and DC motors, UPS system, power supply for relays and
contactors.
Power MOSFET (metal oxide semiconductor field effect transistor):-

 A power MOSFET has three terminals called drain, source and gate.
 The power MOSFET is a voltage control device.
 It is a unipolar device and its operation depends on the flow of majority
charge carriers.
 It is free from the break down voltage.
 The power MOSFET has 2 types.
1. N – Channel enhancement MOSFET.
2. P – Channel enhancement MOSFET.
N – Channel enhancement MOSFET:-
CHANDAN.G.K 10
 Figure a shows the schematic symbol of N – Channel enhancement

MOSFET and figure b shows the basic structure of MOSFET.
 On the P – substrate 2 heavily doped n+ regions are defused and an
insulating layer of silicon dioxide is grown on the surface.
 This insulating layer is also deposited on the gate of the MOSFET.
 When the gate is made positive with respective source, an electric field is
established which induces the negative charges in the P – substrate below
the sio2 layer.
 If VGS is made positive, the drain current ID is gradually increases the gate
voltage hence the name of the device is called N – channel MOSFET.
Characteristics of N – Channel enhancement MOSFET:-
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 Figure shows the transfer characteristics of N – Channel power MOSFET.
CHANDAN.G.K 12
 It shows the variation of drain current ID as a function of gate source

voltage VGS.
 There is a threshold voltage VGST below which the device is OFF.
 The magnitude of VGST is in the order of 2 – 3 volts.
 The figure shows the output characteristics of N – Channel power
MOSFET.
 It indicates the variation of drain current ID as a function of drain source
voltage VDS.
 The VDS is almost linear value on the resistance is given by
RDS = VDS / ID
 If VDS is increased, the output characteristics is respectively flat, an
indicating a drain current constant.
 The load line intersect the output characteristics at A and B, A indicates
fully ON condition and B indicates fully OFF condition acts as switch.
Comparison between MOSFET, BJT and IGBT:-

BJT MOSFET IGBT
BJT is a current MOSFET is a voltage IGBT is a voltage
controlled device. controlled device. controlled device.
The input impedance of The input impedance of The input impedance of
BJT is low. MOSFET is high. IGBT is high.
The drive circuit of BJT The drive circuit of The drive circuit of
is complex. MOSFET is simple. IGBT is simple.
Conduction losses are Conduction losses are Conduction losses are
low. high. low.
Switching losses are high Switching losses are low Switching losses are low
for high frequency. for high frequency. for high frequency.
BJT is a bipolar device. MOSFET is a unipolar IGBT is a bipolar device.
device.
BJT is minority carrier MOSFET is majority IGBT is minority carrier
device. carrier device. device.
SCR (silicon control rectifier):-

 Silicon control rectifier is a thyristor family device.
 The name thyristor is derived from the combination of the terms thyratorn
and transistor.
CHANDAN.G.K 13
 This means the thyristor is a solid state device and are compact.
 It has the typical voltage rating of 10KV and current rating of 3000 AMPS
and power capability is 30 MV.
Construction:-
 SCR is a 4 layer 3 junction unidirectional device with 3 terminals anode,

cathode and gate.
 Figure a shows the symbol of SCR and figure b shows the layer diagram of
SCR.
 It is a rectifier constructed with silicon material and it has a gate terminal
for control purpose.
 The gate terminal determines, the rectifier switches from the open circuit to
the short circuit state because of its high temperature and power capability.
V – I characteristics and modes of operation:-

 The V – I characteristics of SCR and modes of operation.
 There are 3 modes of operation are
1. Forward condition mode:- when the SCR is in the forward conduction
mode. The junction J1 and J3 are forward bias and J2 will break down, this
is due to avalanche effect. There is a free carrier movement across all the
junctions resulting anode to cathode forward current IA this device is said to
be ON state.
2. Forward blocking mode:- when the anode is made positive with respective
to cathode the junction J2 is reverse bias and leakage flow through the
device is called forward blocking mode.
CHANDAN.G.K 14
3. Reverse blocking mode:- when the cathode is made positive with respect to
the anode, the junction J1 and J3 are reverse biased and a small leakage
current will flow through the SCR is called as reverse blocking mode.
Two transistor analogy:-
CHANDAN.G.K 15
 Figure shows the two transistor analogy of SCR.

 For Vg = VBE2 = 0, the base current IB2 and collector current TC2 = 0. The
base current is too small to turn ON Q1 and hence both the transistor are in
the OFF state result is high impedance between the collector and emitter
and hence SCR behaves as open switch.
 When Vg is chosen sufficiently large to turn ON Q2, this will rise and turns
Q1 is ON and collector current IC1 and base current IB2 will increase this
results anode to cathode resistance. The SCR behaves as a closed switch
(ON state). This action is called latching action.
SCR terminology:-
1. Control rectification property:-
 The SCR are used to obtain variable output voltages and it is controlled by
the rectification.
 It is a technique in which SCR is turned ON by short pulse at a desired
firing angle and turned OFF by using appropriate communication
technique.
2. Firing angle and conduction angle:-
 The time after the input voltage starts to go positive until the thyristor is
fired is called firing angle (∝).
 The SCR will turn OFF by natural commutation when the current becomes
zero is called conduction angle ( β ).
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3. Gate controlled:-
 When the SCR is forward bias by applying a positive voltage between the
gate and cathode, this method is called as gate controlled.
4. Phase controlled:-
 The average current of SCR can be varied by controlling the firing angle in
each half cycle is called phase controlled.
5. Commutation:-
 The process of turning OFF the SCR is known as commutation and it
cannot be turned OFF by simply removing the gate pulse.
6. Forward break over voltage (VB0):-
 It is the voltage above which the SCR entries the conduction region in the
absence of gate signal.
7. Reverse break over voltage (VBR):-
 When the reverse biased on SCR is increased beyond the reverse break over
voltage, the avalanche break down occurs at larger currents.
8. Latching current (IL):-
 It is the minimum current required to latch the device from OFF state to ON
state. It is defined as the minimum current required to trigger the device in
mili amps.
9. Holding current (IH):-
 It is defined as the minimum current required to hold the device and returns
to its OFF state.
 The value of this current is very small and lesser than the latching current
may be 3 to 5 mili amps.
10. Gate current (IG):-
 The current which is applied to the gate of the device for control purpose is
known as gate current.
 It may be of 2 types
1. Minimum gate current:- the minimum gate current is the minimum value
of the trigger the device.
2. Maximum gate current:- the maximum gate current is the maximum
value of current to applied to the device safely.
Applications of SCR:-
1. Relay controllers.
2. Time delay circuits.
3. RPS.
CHANDAN.G.K 17
4. Static switches.
5. Motor controllers, heat controllers and phase controllers.
6. Choppers, inverters, cycloconverters.
7. Battery charges.
8. Protective devices.
Controlled rectifier:-
Single phase half – wave controlled rectifier:-
CHANDAN.G.K 18
 Fig show the single phase half wave controlled rectifier using resistive load
and its quadrant of operation.
 The half wave rectifier conducts during only one half cycle and produces
one output pulse and hence it is referred as one pulse converter.
 During the positive half cycle, the thyrister T1 anode is positive with
respect its cathode until the thyrister is triggered by the gate pulse.
 When the thyrister is fired at an angle∝, the supply voltage is applied across
the load and it is directly connected to the AC supply.
 By varying the firing angle∝, the output voltage can be controlled and the
voltage drop across the load is in the order of one volt.
 During the negative half cycle, the thyrister T1 blocks the flow of load
current and no voltage is applied across the load resistance as shown in the
relevant wave forms.
Single phase full wave bridge controlled rectifier:-
CHANDAN.G.K 19
 Fig shows the single phase full wave bridge controlled rectifiers with a
highly inductive load (RLE) type.
 During the positive half cycle, the thyrister T1 and T2 are forward biased
and fired is connected load, the thyrister T1 and T2 will continue to conduct
beyond ω t = π , even when the input voltage is negative.
 During the negative half cycle the thyrister T3 and T4, are forward biased
and apply the voltage across the thyrister T1 and T2 as reversed blocking
voltage.
 Hence T1 and T2 will be turned OFF due to natural commutation and load
current transferred from T1 and T21, to T3 and T4.
 Fig shows the relevant wave forms of full wave bridge rectifier.
 During the period ∝¿ π the input voltage and input current are positive and
converter is said to be in the rectification mode.
 During the period from π ¿( π +∝) the input voltage is negative and input
current is positive, there will be a reverse power flow from the load to the
supply and hence it is said to be inversion mode.
CHANDAN.G.K 20
05 Marks questions
Remember
1. What is the relevance of power electronics? Mention its applications.
2. Define holding and Latching current in SCR.
3. List the features of power diode.
4. What is the function of SCR? List its applications.
5. List the applications of SCR and define holding current.
6. List the applications of IGBT and power BJT.
7. How does SCR switch differ from diode switch?
Understand
1. Distinguish between SCR and TRIAC.
2. Classify the types of power semiconductor devices.
3. Explain the working of SCR.
4. Explain the characteristics of power diode.
5. Explain the characteristics of IGBT.
6. Discuss the structure of power MOSFET.
7. Discuss the structure of power BJT.
8. Discuss the structure/construction of IGBT.
9. Explain the characteristics of power BJT.
10. Explain the characteristics of MOSFET.
11. Explain the structure of SCR.
12. Explain two transistor analogy of SCR.
13. Compare DIAC and TRIAC.
14. Compare SCR and TRIAC.
15. Discuss the importance of freewheeling diode.
16. Explain Full wave mid-point controlled rectifier.
Applying
1. Draw switching times characteristics of BJT and explain.
2. Write the V-I characteristics of SCR.
3. Sketch the circuit of Single Phase half wave controlled rectifier.
4. Sketch the circuit of Full wave mid-point controlled rectifier.
5. Sketch the circuit of Full Wave Bridge controlled rectifier.
6. Sketch the circuit of Half Wave Bridge controlled rectifier.
CHANDAN.G.K 21
Evaluate
1. Compare IGBT and MOSFET.
2. Compare BJT and MOSFET.
3. Evaluate the expression for anode current of SCR.
4. Chose the suitable circuit for mid-point controlled rectification and explain.
5. Summarise the applications of Thyristors.
6. Evaluate the expression for two transistor analogy of SCR.
10 Marks questions
Remember
1. Define power electronics. Mention any 8 applications of power electronics.
2. Name any 5 applications of SCR and IGBT each.
Understand
1. Explain the characteristics and working principle of power BJT.
2. Explain the characteristics and working principle of MOSFET.
3. Differentiate BJT, IGBT and MOSFET.
4. Differentiate SCR, TRIAC and DIAC.
5. Explain two transistor analogy of SCR with circuit diagram.
Applying
1. Sketch the V-I characteristics of SCR and explain its working.
2. Sketch and explain the characteristics of IGBT.
3. Sketch and explain the Single Phase half wave controlled rectifier.
4. Sketch and explain the Full wave mid-point controlled rectifier.
5. Sketch and explain the Full wave bridge controlled rectifier.
6. Sketch and explain the half wave bridge controlled rectifier.
CHANDAN.G.K 22
UNIT-2
Triggering and commutation of SCR

Triggering:-
 Switching a thyristor ON is called triggering or firing.
 The following five methods of triggering of an SCR are follows.
Thermal triggering:-
 In the semi-conductor device, the width of depletion layer of SCR
decreases and temperature increases.
 The leakage current to the reversed biased PN junction doubles for ever 8ºC
raising temperature.
 At a certain temperature, the reversed biased junction breaks down and the
thyrister starts conducting.
 This method of triggering is called thermal triggering.
Radiation triggering:-
 In this method the light particles are made to bombard the reversed biased
middle junction, this causes an increased in the number of electron hole
pairs leading to the instantaneous flow of current.
 For radiation triggering, the device must have high value of rate of change
of voltage are used in electrical isolation between the signal and load.
 Example:- LASCR (light activated silicon control rectifier).
Voltage triggering:-
 When the voltage applied between the anode and cathode of the SCR is
increased, the width of the depilation layer starts decreasing.
 At the forward break over voltage, the depilation layer vanishes causing the
reverse biased junction to collapse.
 This results an instantaneous triggering of the device and generate the
electron hole pairs increases the number of charge carriers.
dv/dt triggering:-
 When a positive anode to cathode voltage is applied across the SCR, the
central junction is reversed biased.
 The depilation layer developed at central junction and act as a dielectric.
CHANDAN.G.K 23
 The P and N layers act as a 2 plates of a capacitor, if a forward voltage is

applied to the central junction, the changing current will flow and turns ON
the device and give by the equation. IC = C dv
Dt
Gate triggering:-
 In this method the SCR is operated with an anode voltage less than the
forward break over voltage.
 The SCR is triggered into the conduction by applying a low power signal
between the gate and cathode.
 If once the SCR is switched ON, the gate has no further control on the
device current.
 The gate pulse can be supplied either from a DC source or AC source.
 It provides a large turn ON gain, which is the ratio of anode current to the
gate current and it consumes low power.
R – Triggering:-
Rmin – limit the gate current.

R – Set to zero.
RB - limit the forward gate voltage.
 The resistor triggering circuits are simplest more economical and they
suffer from the range of firing angle 0º to 90º.
 Fig shows the R – triggering circuit and wave forms.
CHANDAN.G.K 24
 The limiting resister Rmin is placed between anode and gate to limit the
gate current, even if R2 is said to zero.
 The stabilizing resistor is used to limit the forward gate voltage.
 In a pure resistive circuit the gate current is in phase with the applied
voltage Vs and the delay angle increases with R.
 The minimum triggering is obtained with R is equal to zero and the
thyrister T1 conducts during its positive half cycle.
 Since the desired amount of gate current is reach before 90º and it is not
possible to extend the firing angle ∝ beyond 90º.
 The maximum firing angle can be obtained by a circuit will be 0º<∝< 90º.
 The diode D prevents the breakdown of the gate to cathode junction during
negative half cycle.
 During the negative half cycle the thyrister T1 act as a open switch and the
load voltage is zero.
RC – triggering:-
CHANDAN.G.K 25
 Figure shows RC triggering circuit by relevant wave forms.

 In the negative half cycle the capacitor charges negatively to diode D2.
 As soon as the supply voltage Vs process the zero and becomes positive, C
begins to charge to R.
 As soon as the capacitor or voltage Vc reaches the gate trigger voltage Vg+
and the SCR is fired and can be controlled from 0 to 180º.
 In the positive half cycle the capacitor is charged through the resistor R and
voltage across C reaches the positive valve and thyrister T1 is trigger.
 The charging of capacitor can be controlled by the variable resistor.
 The diode D1 prevents the breakdown of gate to cathode junction during
negative half cycle.
Commutation:-
 The gate has no control after it has been triggered into the conduction, the
device brought back the blocking mode either by the reducing the forward
current below the holding current, this must be achieved by external means
turn OFF process is called commutation.
 There are 2 types of commutation:-
1. Natural commutation.
2. Forced commutation.
Natural commutation:-
 When the SCR is connected to an AC source, the current goes through its
natural zero at the end of every half cycle and a reverse voltage appears
automatically across the SCR, hence the SCR will be turned OFF.
CHANDAN.G.K 26
 This process is called natural commutation and it is also called as line

commutation or class F commutation.
 It is used in line commutated rectifiers and inverters.
 Fig shows the circuit diagram and wave forms of natural commutation.
 The thyristor circuit is excited by an AC source.
 During the positive half cycle, the thyristor does not conducts and hence the
SCR will be turn OFF.
Forced commutation:-
 In the DC circuits there is no natural zero of the current.
 In such a circuits, the SCR will be turned OFF by a special commutation
circuits using additional components are inductance and capacitance.
 This process of commutation is called forced commutation.
 The forced commutation are classified as below,
1. Resonant commutation or load commutation (class A).
2. Self-commutation (class B):- in self-commutation, the commutating
components L and C do not carry the load current.
3. Auxiliary or voltage commutation (class C):- it uses a capacitor, an
inductor and an auxiliary thyristor to achieve the commutation of main
thyristor.
4. Complementary commutation (class D):- it uses two thyristor. One for
triggering and another for thyristor turns OFF.
5. External pulse commutation (class E):- it uses an auxiliary or pulse
transistor.
Comparison between forced commutation and natural commutation:-

Natural commutation Forced commutation
Requires AC voltage at input. Requires DC voltage at input.
External components are not required. External components are required.
Used in controlled rectifiers, AC Used in choppers , inverters etc.
voltage controller.
SCR turns OFF due to negative supply SCR turns OFF due to current and
voltage. voltage both.
No power loss takes place during Power loss takes place during
commutation. commutation.
Zero cost. Significant cost.
CHANDAN.G.K 27
Comparison between load and line commutation:-

Parameters Load commutation Line commutation
Nature of source. The source voltage is The source voltage is
DC. AC.
Commutation Inductor and capacitor No additional
components. are employed for commutating elements
commutation. are required.
Nature of load. Circuit parameters are Under damped load is
chosen such that R, L not necessary.
and C form an
underdamped circuit.
Other name. Self-commutation. Natural commutation.
Applications. Series inverter. Controlled rectifiers and
cycloconverters.
Protection of SCR:-
 The SCR must be protected against some abnormal conditions are listed
above.
1. Protection against over current:-
 If a thyristor is subjected to over current, its junction temperature may
Exide the rate value and device may be damaged.
 Protection of over current is achieved by using circuit breakers and fuses in
series with the thyristor.
CHANDAN.G.K 28
2. Protection against over voltage:-

 The thyristor are very sensitive to the over voltage causes the circuit by un
wanted turn ON of a thyristor due to the reverse break down.
 The thyristor can be protected against over voltage by using VDR (voltage
dependent resistor) in parallel connection.
 If there is any increase in the voltage the fuse will blow out due to high
current.
3. Protection against large di/dt:-
 When a thyristor is forward biased and it is turned ON by a gate pulse,
conduction of anode current begins near the gate cathode junction.
 If there is a rise in the anode current, the current density in the junction J2
will be high since only a small area of this region will be conducting
immediately.
 The large di/dt turn on must be kept below the acceptable limit ranging
from 20 to 500 amps.
 The inductor opposes the rapid change in the current flowing to the SCR
can be protected against large di/dt.
4. Protection against large dv/dt (snubber circuit):-
 When the forward voltage across anode and cathode of a thyristor, J1 and
J3 are forward biased and J2 is reverse biased.
 The J2 has the characteristics of capacitor due to the charges existing across
the junction.
 Since the current is directly propositional to the rate of change of voltage
applied across it.
 A large dv/dt can turn ON the SCR even in the absence of gate current,
their by causing short circuits and mal functioning of control scheme.
 Hence a special circuit is known as snubber circuit is used for limiting the
dv/dt across the thyristor.
 The snubber circuit consist of series RC circuit connected across the
thyristor.
 When a dv/dt is high the capacitor behaviour has a short circuit because the
voltage across capacitor cannot change instantaneously and the snubber
circuit prevents the SCR from turning ON.
5. Gate protection:-
 The triggering pulse is applied between the gate and cathode.
CHANDAN.G.K 29
 The diodes D1 and D2 protect the gate circuit from the negative gate
voltage and allow the positive gate pulses.
 The resistor R limits the gate current, the resistor RG and capacitor C is used
to increase the dv/dt capability.
05 Marks questions
CHANDAN.G.K 30
Remember
1. Define Triggering and Commutation of SCR.
2. List the turn ON methods of SCR. Explain any two.
3. Define natural and forced commutation. List the types.
4. Mention the different methods for protection of SCR.
5. List the types of Commutation methods.
Understand
1. Explain briefly the turn ON methods of SCR.
2. Compare Natural and forced commutation.
3. Briefly explain Natural commutation, forced commutation and resonant
commutation.
4. Explain snubber circuit to protect SCR.
5. Explain over voltage and over current protection of SCR.
6. Explain dv/dt protection of SCR.
7. Explain Gate protection of SCR.
Applying
1. Sketch and Explain Resonant commutation.
2. Sketch the circuit for Auxiliary commutation.
3. Sketch the circuit for Complementary commutation.
4. Write the neat circuit diagram of SCR being triggered by UJT.
5. Sketch the circuit for RC-triggering method to turn ON SCR.
6. Sketch and explain R-triggering method to turn ON SCR.
10 Marks
Remember
1. List the types of Commutation methods. Explain any two methods.
2. List the different triggering methods of SCR and explain.
Understand
1. Explain the different methods for protecting the SCR.
2. Explain RC-triggering method to turn ON SCR with circuit diagram.
Applying
CHANDAN.G.K 31
1. Sketch and explain pulse triggering using UJT relaxation oscillator to turn ON
SCR.
2. Sketch and Explain Auxiliary commutation.
3. Sketch and Explain Complementary commutation.
UNIT-3
CHANDAN.G.K 32
Choppers, Inverters and Cycloconverters
05 Marks questions
Remember
1. Define Chopper. Mention its applications.
2. Define Inverter. Mention its applications.
3. Define Cycloconverter. Mention its applications.
4. Define Step-up and step-down chopper.
5. Define Cycloconverters. Explain its working principle.
Understand
1. Explain the basic principle of chopper operation.
2. Explain different Chopper control Schemes.
3. Explain the working principle of Step-up chopper.
4. Explain the working principle of step-down chopper.
5. Classify the chopper. Explain First Quadrant chopper.
6. Explain Second Quadrant chopper.
7. Explain Two Quadrant chopper.
8. Explain Four Quadrant chopper.
9. Write a short note on Inverters.
10. Classify the inverters based on commutation and explain.
Applying
1. Write a short note on Voltage source inverter.
2. Write a short note on current source inverter.
3. Sketch and explain the working principle of Series Inverter.
4. Sketch and explain the working principle of Full Bridge Inverter.
5. Write the circuit diagram of Single phase to single phase midpoint
cycloconverter.
6. Sketch and explain the working principle of Half Bridge Inverter.
Evaluate
1. Compare Voltage source inverter and current source inverter.
2. Summarise the applications of Cycloconverter.
3. Summarise the applications of Inverters.
CHANDAN.G.K 33
4. Predict and sketch the waveform of PWM techniques used in inverters.

5. Evaluate the expression for duty cycle of chopper and explain.
10 Marks
Understand
1. Explain Four Quadrant chopper with circuit diagram.
2. Explain PWM techniques used in inverters.
Applying
1. Sketch and explain Single phase to single phase midpoint cycloconverter.
2. Sketch and explain the working principle of Variable DC link inverter.
UNIT-4
CHANDAN.G.K 34
Applications of Thyristors
05 Marks questions
Understand
1. Explain over voltage protection of motors.
2. Discuss over current protection of motors.
3. Explain Light Dimmer circuit using DIAC and TRIAC.
4. Explain Burglar Alarm circuit using SCR.
Applying
1. Sketch the block diagram for Speed control of DC motors using Dual
converters.
2. Sketch the block diagram for speed control of single phase Induction motor.
3. Sketch the block diagram for speed control of three phase Induction motor.
4. Write the circuit diagram for Photo Electric Control of SCR.
5. Write the circuit diagram for Light Dimmer circuit using DIAC and TRIAC.
6. Sketch the circuit of Burglar Alarm circuit using SCR.
7. Sketch the block diagram for Armature voltage control method for speed
control of DC shunt motor.
8. Sketch the block diagram for Armature Field control method for speed control
of DC shunt motor.
10 Marks
Understand
1. Explain the Photo Electric Control of SCR with circuit diagram.
2. Explain Light, Dimmer circuit using DIAC and TRIAC with circuit diagram.
3. Sketch and explain the Burglar Alarm circuit.
Applying
1. Sketch and explain the Armature voltage control method for speed control of
DC shunt motor.
2. Sketch and explain the Armature Field control method for speed control of DC
shunt motor.
3. Sketch and explain the Speed control of DC motors using Dual converters.
CHANDAN.G.K 35
4. Sketch and explain the speed control of single phase Induction motor.
5. Sketch and explain the speed control of three phase Induction motor.
UNIT-5
CHANDAN.G.K 36
Programmable Logic Controllers
05 Marks questions
Remember
1. Define PLC. Explain its advantages.
2. List the hardware components of PLC.
3. Define ladder diagram? Write and label its parts.
4. List the any 5 symbols used in ladder diagrams.
5. List and explain PLC Registers.
6. List and explain PLC timers with examples.
Understand
1. Explain overall PLC system.
2. Discuss Process Scanning of PLC.
3. Explain the significance of Ladder diagram in PLC programming.
4. Describe General characteristics of Registers.
5. Explain Up/down Counter with examples.
6. Explain Holding Registers, and Input & Output Registers.
Applying
1. Write the ladder diagram, truth table for basic logic gates.
2. Write the ladder diagram and truth table for the expression Y= (A and B) or C.
3. Describe Retentive and Delay timer functions.
4. Write short note on PLC up/down counter.
5. Differentiate between relay logic panel & PLC based control panel.
Create
1. Design ladder diagram for DE Morgan’s theorem expressions.
2. Construct ladder diagram for the Boolean expression Y= (AB+BC+CD).
3. Write the block diagram of PID module.
4. Prepare the list of functional features of Ladder diagram.
5. Prepare the list of functional features of PLC.
10 Marks questions
CHANDAN.G.K 37
Remember
1. A) Define PLC. Explain its advantages.
B) List and explain PLC Registers.
2. A) Define ladder diagram? Write and label its parts.
b) List any five symbols used in ladder diagrams.
Understand
1. Define PID? Explain its control process with respect to PLC.
2. Explain PLC timers with diagram.
3. Explain jump with return and non-return functions.
Applying
1. Write the block diagram of overall PLC system and explain.
2. Write the ladder diagram, truth table for basic logic gates and explain.
3. Write the ladder diagram and truth table for the following expressions:
(i)Y1= (A and B) or C, (ii) Y2= (A or B) and C.
UNIT-6
CHANDAN.G.K 38
DCS and SCADA System
05 Marks questions
Remember
1. Define SCADA. List its features.
2. Define DCS. Mention its features.
3. Mention the features of SCADA.
4. List the applications of SCADA.
5. List the Advantages of DCS.
Understand
1. Explain concept of HMI and MMI.
2. Explain the significance of SCADA.
3. Explain working of HMI with sketch.
4. Explain working of MMI with sketch.
5. Explain the concept of SCADA hardware.
6. Explain the concept of SCADA software.
7. Explain the method of interfacing SCADA with PLC.
8. Compare SCADA and PLC.
9. Explain first (monolithic) generation architecture of SCADA.
10. Explain Second (distributed) generation architecture of SCADA.
11. Explain third (Networked) generation architecture of SCADA.
Application
1. Justify the interfacing of SCADA with PLC.
2. Describe SCADA hardware.
3. Describe SCADA software.
4. Write the block diagram of fourth generation SCADA architecture.
5. Write the block diagram of hierarchical architecture of DCS.
10 Marks questions
Understand
1. Describe SCADA hardware and software.
2. Explain the block diagram of DCS system.
CHANDAN.G.K 39
3. Explain fourth (Internet) generation architecture of SCADA.

4. Explain the concept of SCADA hardware and software.
Application
1. Sketch and explain elements of SCADA System.
2. Sketch the block diagram for second and third generation SCADA architecture
and Explain.
CHANDAN.G.K 40

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What are some of the components of a PLC system?

What are some of the components of a PLC system?

INDUSTRIAL AUTOMATION

For 6th semester diploma in electronics and

Under the guidance of

Unit 1: Power Electronic Devices

Power Electronics-Introduction, need for power devices, features of Power

Unit 2: Switching of SCR

Triggering- Definition and need, triggering circuits: R-Triggering, RC–

Unit 3: Choppers, Inverters and Cycloconverters

Chopper-Definition, working principle, duty cycle, chopper control schemes,

Unit 4: Applications of Thyristors

Unit 6: DCS and SCADA System

Data Control System-Introduction, features, hierarchical architecture, advantages

Power Electronic Devices

Need of power electronics devices:-

 The bipolar junction transistor is a 3 terminal semiconductor devices, in

 The BJT is made up of silicon or germanium crystal in which a thin layer of

Insulated gate bipolar transistor (IGBT):-

 A IGBT combines the merits of BJT and MOSFET.

 Figure shows the circuit diagram to find the characteristics of IGBT.

1. Turn ON – G increase – VGE increase with increase in VGET.

Power MOSFET (metal oxide semiconductor field effect transistor):-

 Figure a shows the schematic symbol of N – Channel enhancement

Characteristics of N – Channel enhancement MOSFET:-

 Figure shows the transfer characteristics of N – Channel power MOSFET.

 It shows the variation of drain current ID as a function of gate source

Comparison between MOSFET, BJT and IGBT:-

SCR (silicon control rectifier):-

 SCR is a 4 layer 3 junction unidirectional device with 3 terminals anode,

V – I characteristics and modes of operation:-

Two transistor analogy:-

 Figure shows the two transistor analogy of SCR.

Single phase half – wave controlled rectifier:-

Single phase full wave bridge controlled rectifier:-

Triggering and commutation of SCR

 The P and N layers act as a 2 plates of a capacitor, if a forward voltage is

Rmin – limit the gate current.

 Figure shows RC triggering circuit by relevant wave forms.

 This process is called natural commutation and it is also called as line

Comparison between forced commutation and natural commutation:-

Comparison between load and line commutation:-

2. Protection against over voltage:-

Choppers, Inverters and Cycloconverters

4. Predict and sketch the waveform of PWM techniques used in inverters.

Programmable Logic Controllers

DCS and SCADA System

3. Explain fourth (Internet) generation architecture of SCADA.

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