AON6403

30V P-Channel MOSFET

General Description Product Summary

The AON6403 combines advanced trench MOSFET VDS -30V

technology with a low resistance package to provide ID (at VGS= -10V) -85A
extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 3.1mΩ
and battery protection applications.
RDS(ON) (at VGS = -4.5V) < 4.3mΩ

100% UIS Tested

100% Rg Tested

DFN5X6 D
Top View Bottom View Top View

1 8

2 7

3 6

4 5 G

PIN1 S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C -85
ID
Current G TC=100°C -67 A
C
Pulsed Drain Current IDM -280
Continuous Drain TA=25°C -21
IDSM A
Current TA=70°C -17
Avalanche Current C IAR -72 A
Repetitive avalanche energy L=0.1mH C EAR 259 mJ
TC=25°C 83
B
PD W
Power Dissipation TC=100°C 33
TA=25°C 2.3
PDSM W
Power Dissipation A TA=70°C 1.4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14 17 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

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 AON6403

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 -1.7 -2.2 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -280 A
VGS=-10V, ID=-20A 2.6 3.1
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.6 4.4
VGS=-4.5V, ID=-20A 3.5 4.3 mΩ
gFS Forward Transconductance VDS=-5V, ID=-20A 82 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6100 7600 9120 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 930 1320 1720 pF
Crss Reverse Transfer Capacitance 630 1050 1470 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 2 4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 130 163 196 nC
Qg(4.5V) Total Gate Charge 63 79 95 nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs Gate Source Charge 18 22 26 nC
Qgd Gate Drain Charge 20 33 46 nC
tD(on) Turn-On DelayTime 13 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, 18 ns
tD(off) Turn-Off DelayTime RL=0.75Ω, RGEN=3Ω 135 ns
tf Turn-Off Fall Time 52 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 21 26 32 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 63 78 94 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment .
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 2: Nov. 2010

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AON6403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150
-3.5V 150
VDS=-5V
120 -4V
120
-10V -3V
90 90
-ID (A)

-ID(A)
60 60

125°C
30 VGS=-2.5V 30
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-VDS (Volts) -VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

5 1.6
Normalized On-Resistance VGS=-10V
ID=-20A
4 1.4
VGS=-4.5V
RDS(ON) (mΩ )

17
3 1.2
5
VGS=-4.5V
2
VGS=-10V ID=-20A
10
2 1

1 0.8
0 5 1015 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
18
Voltage (Note E)
(Note E)

9 1.0E+02
ID=-20A
8 1.0E+01
7 40
1.0E+00
6
RDS(ON) (mΩ )

1.0E-01 125°C
-IS (A)

5 125°C
1.0E-02
4 25°C
1.0E-03
3
25°C 1.0E-04
2

1 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON6403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 12000

VDS=-15V 10000
8 ID=-20A
Ciss

Capacitance (pF)
8000
-VGS (Volts)

6
6000
4
4000 Coss

2
2000

Crss
0 0
0 30 60 90 120 150 180 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 400

350
100.0 RDS(ON) 10µs 10µs TJ(Max)=150°C
300
limited TC=25°C
100µs
-ID (Amps)

250
Power (W)

10.0
1ms
17
DC 200 5
10ms
1.0
150
2
10
100
0.1
TJ(Max)=150°C
TC=25°C 50
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
-VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=1.5°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6403

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

230.0 90
-IAR (A) Peak Avalanche Current

200.0 80

Power Dissipation (W)

70
TA=25°C
170.0
60
140.0 TA=150°C TA=100°C 50

110.0 40
30
80.0
20
TA=125°C
50.0 10

20.0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

100 10000

TA=25°C
80 1000
-Current rating ID(A)

Power (W)

60 17
100 5
2
40
10
10
20

1
0 0.0001 0.01 1 100 10000
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=55°C/W 40

0.1

PD
0.01

Single Pulse Ton

T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6403

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev 2: November 2010 www.aosmd.com Page 6 of 6