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    Unit IV - MCQs

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    Mission Gate2021
    This document contains a multiple choice quiz on MOSFET circuits from an electronics engineering course. The quiz has over 100 questions covering topics like levels of integration, advantages of MOSFETs in VLSI, using MOSFETs as resistors or diodes, inversion layers, channel length, oxide thickness, channel length modulation, and how conduction is affected by channel width and mobility. An answer key is provided but no answers are filled in.

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    Unit IV - MCQs

    Uploaded by

    Mission Gate2021
    101 views8 pages
    This document contains a multiple choice quiz on MOSFET circuits from an electronics engineering course. The quiz has over 100 questions covering topics like levels of integration, advantages of MOSFETs in VLSI, using MOSFETs as resistors or diodes, inversion layers, channel length, oxide thickness, channel length modulation, and how conduction is affected by channel width and mobility. An answer key is provided but no answers are filled in.

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    mcq for electrical

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    Unit IV_MCQs

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    This document contains a multiple choice quiz on MOSFET circuits from an electronics engineering course. The quiz has over 100 questions covering topics like levels of integration, advantages of MOSFETs in VLSI, using MOSFETs as resistors or diodes, inversion layers, channel length, oxide thickness, channel length modulation, and how conduction is affected by channel width and mobility. An answer key is provided but no answers are filled in.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    101 views8 pages

    Unit IV - MCQs

    Uploaded by

    Mission Gate2021
    This document contains a multiple choice quiz on MOSFET circuits from an electronics engineering course. The quiz has over 100 questions covering topics like levels of integration, advantages of MOSFETs in VLSI, using MOSFETs as resistors or diodes, inversion layers, channel length, oxide thickness, channel length modulation, and how conduction is affected by channel width and mobility. An answer key is provided but no answers are filled in.

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    You are on page 1of 8

    Department of Electronics Engineering

    Academic Year 2016-17(Term I)

    Class: SE Sub : Electronic Devices and Circuits(204182)

    Multiple Choice Questions on

    UNIT IV- MOSFET Circuits

    1 Which of the following is/are the level(s) of integration ?


    a) Small Scale Integration c) Large Scale Integration
    b) Medium Scale Integration d) All of these
    2 Why MOSFET preferred in VLSI ?
    a) High packaging density c) High impedance and lower power dissipation
    b) Simpler fabrication process d) All of these
    3 By connecting the drain and gate terminals of MOSFET together, it can be used as ----
    a) resistor b) diode c) BIT d) both a and b
    4 The advantage of MOSFET resistor is that it requires __ space

    a) Less b) more c) very less d) none of these

    5 Inversion layer is also known as---


    a) channel region b) gate region c) drain region d) source region
    6 The channel length of typical integrated circuit MOSFET is less than ---

    a) 1µm b) 1mm c) 10µm d) None of these

    7 The oxide . thickness tox of typical integrated circuit MOSFET is less than---
    a) 100 angstroms b) 200 angstroms c) 400 angstroms d) none of these
    8 As VDs increases beyond VDs(sat) effective channel length ---

    a) decreases b) increases c) does not change d) can not predict

    9 As VDs increases beyond VDs(sat) effective channel length · _decreases. This phenomenon is known
    as ---.
    a) channel. height modulation c) channel width modulation
    b) channel length modulation d) Channel expansion

    10 The value of the conduction parameter is directly proportional to---

    SE_2015Course_EDC_Unit IV Page 1
    a) channel width c) channel length
    b) mobility of the electrons in the inversion layer d) both a and b

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    Answer Key

    Q.N Ans Q.N Ans Q.N Ans Q.No Ans Q.No Ans Q.No Ans
    o o o
    1 2 3 4 5 6
    7 8 9 10 11 12
    13 14 15 16 17 18
    19 20 21 22 23 24
    25 26 27 28 29 30
    31 32 33 34 35 36
    37 38 39 40 41 42
    43 44 45 46 47 48
    49 50 51 52 53 54
    55 56 57 58 59 60
    61 62 63 64 65 66
    67 68 69 70 71 72
    73 74 75 76 77 78
    79 80 81 82 83 84
    85 86 87 88 89 90
    91 92 93 94 95 96
    97 98 99 100 101 102
    103 104 105 106 107 108
    109 110 111 112 113 114
    115 116 117 118 119 120
    121

    SE_2015Course_EDC_Unit IV Page 8

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