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    Isc BD263: Isc Silicon NPN Darlington Power Transistor

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    Andrew
    The document provides specifications for the BD263 silicon NPN Darlington power transistor from INCHANGE Semiconductor. It has a collector-emitter breakdown voltage of 60V, a minimum DC current gain of 750 at 1.5A collector current, and is designed for use as an output device in general-purpose amplifier applications. It has maximum ratings including a collector current of 4A, collector-emitter voltage of 60V, and power dissipation of 36W.

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    Isc BD263: Isc Silicon NPN Darlington Power Transistor

    Uploaded by

    Andrew
    28 views2 pages
    The document provides specifications for the BD263 silicon NPN Darlington power transistor from INCHANGE Semiconductor. It has a collector-emitter breakdown voltage of 60V, a minimum DC current gain of 750 at 1.5A collector current, and is designed for use as an output device in general-purpose amplifier applications. It has maximum ratings including a collector current of 4A, collector-emitter voltage of 60V, and power dissipation of 36W.

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    The document provides specifications for the BD263 silicon NPN Darlington power transistor from INCHANGE Semiconductor. It has a collector-emitter breakdown voltage of 60V, a minimum DC current gain of 750 at 1.5A collector current, and is designed for use as an output device in general-purpose amplifier applications. It has maximum ratings including a collector current of 4A, collector-emitter voltage of 60V, and power dissipation of 36W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views2 pages

    Isc BD263: Isc Silicon NPN Darlington Power Transistor

    Uploaded by

    Andrew
    The document provides specifications for the BD263 silicon NPN Darlington power transistor from INCHANGE Semiconductor. It has a collector-emitter breakdown voltage of 60V, a minimum DC current gain of 750 at 1.5A collector current, and is designed for use as an output device in general-purpose amplifier applications. It has maximum ratings including a collector current of 4A, collector-emitter voltage of 60V, and power dissipation of 36W.

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    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Darlington Power Transistor BD263

    DESCRIPTION
    ·Collector–Emitter Breakdown Voltage—
    : V(BR)CEO = 60V
    ·DC Current Gain—
    : hFE = 750(Min) @ IC= 1.5 A

    APPLICATIONS
    ·Designed for use as output devices in complementary
    general-purpose amplifier applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 80 V

    VCEO Collector-Emitter Voltage 60 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current-Continuous 4 A

    IB Base Current 0.1 A

    Collector Power Dissipation


    PC 36 W
    TC=25℃

    Ti Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Darlington Power Transistor BD263

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA 2.5 V

    VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V 2.5 V

    ICEO Collector Cutoff Current VCE= 80V; IB= 0 0.5 mA

    VCB= 80V; IE= 0 0.2


    ICBO Collector Cutoff Current mA
    VCB= 80V; IE= 0;TC= 100℃ 2.0

    IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA

    hFE DC Current Gain IC= 1.5 A ; VCE= 3V 750

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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