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Silicon-Carbide (Sic) Power Devices

Silicon carbide has emerged as the most viable candidate for next-generation power semiconductors due to its low resistance, high temperature and frequency performance compared to silicon. It allows for fewer components, reducing complexity. Key applications include high-efficiency inverters for solar, wind, electric vehicles, industrial equipment and air conditioners as well as high-voltage switches. Silicon carbide has 10 times the electric field breakdown capability of silicon, with higher thermal conductivity and temperature operation due to its wide bandgap.

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84 views2 pages

Silicon-Carbide (Sic) Power Devices

Silicon carbide has emerged as the most viable candidate for next-generation power semiconductors due to its low resistance, high temperature and frequency performance compared to silicon. It allows for fewer components, reducing complexity. Key applications include high-efficiency inverters for solar, wind, electric vehicles, industrial equipment and air conditioners as well as high-voltage switches. Silicon carbide has 10 times the electric field breakdown capability of silicon, with higher thermal conductivity and temperature operation due to its wide bandgap.

Uploaded by

venktesh22
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Silicon-carbide (SiC) Power Devices

Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-
loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and
high-voltage performance when compared to silicon. SiC also allows designers to use fewer
components, further reducing design complexity.

SiC Technology Applications:

 High-efficiency inverters in DC/AC converters for solar and wind power


 Power converters for electric and hybrid vehicles
 Power inverters for industrial equipment and air conditioners
 High-voltage switches for X-ray generators
 Thin-film coating processes

Silicon-carbide (SiC) Power Devices (169)





SiC is a better power semiconductor than Si, because of a 10-times


higher electric-field breakdown capability, higher thermal
conductivity and higher temperature operation capability due to a
wide electronic bandgap.

SiC excels over Si as a semiconductor material in 600-V and


higher-rated breakdown voltage devices. SiC Schottky diodes at
600-V and 1200-V ratings are commercially available today and
are already accepted as the best solution for efficiency
improvement in boost converter topologies. In addition, these
diodes find use in solar inverters, because they have lower
switching losses than the Si PIN freewheeling diodes now used in
that application.

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