2SK3667

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3667
Switching Regulator Applications
Unit: mm

• Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.)

• High forward transfer admittance: |Yfs| = 5.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 600 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V
1: Gate
DC (Note 1) ID 7.5 2: Drain
Drain current Pulse (t = 1 ms) A 3: Source
IDP 30
(Note 1)
Drain power dissipation (Tc = 25°C) PD 45 W JEDEC ―
Single pulse avalanche energy
EAS 189 mJ JEITA SC-67
(Note 2)
TOSHIBA 2-10U1B
Avalanche current IAR 7.5 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ Weight : 1.7 g (typ.)

Channel temperature Tch 150 °C

Storage temperature range Tstg -55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2
Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W

1
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG = 25 Ω

3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Gate-source breakdown voltage V (BR) GSS IG =±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 0.75 1.0 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 4 A 1.5 5.5 ⎯ S
Input capacitance Ciss ⎯ 1300 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 12 ⎯ pF

Output capacitance Coss ⎯ 120 ⎯

10 V ID = 4 A VOUT
Rise time tr VGS ⎯ 20 ⎯
0V
Turn-on time ton RL = 50 Ω ⎯ 50 ⎯
50 Ω
Switching time ns
Fall time tf ⎯ 35 ⎯
VDD ≈ 200 V

Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 150 ⎯

Total gate charge Qg ⎯ 33 ⎯

Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 7.5 A ⎯ 18 ⎯ nC

Gate-drain charge Qgd ⎯ 15 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 7.5 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 30 A

Forward voltage (diode) VDSF IDR = 7.5 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 7.5 A, VGS = 0 V, ⎯ 1200 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 12 ⎯ μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3667 Part No. (or abbreviation code)
Please contact your TOSHIBA sales representative for details as to
Lot No.
(weekly code) environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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 2SK3667

ID – VDS ID – VDS
10 20
COMMON SOURCE 10 COMMON SOURCE
10,8 6
Tc = 25°C 8 Tc = 25°C
PULSE TEST PULSE TEST

(A)
(A)

8 5.5 16
6

DRAIN CURRENT ID
DRAIN CURRENT ID

5.25
6 12

5 5.5
4 8
5.25
4.75
5
2 4.5 4
4.75
4.5
VGS = 4V
VGS = 4 V
0 0
0 4 8 12 16 20 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

20 10
VDS (V)

COMMON SOURCE
VDS = 20 V
(A)

16 8
PULSE TEST
ID = 10 A
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

12 6 COMMON SOURCE
Tc = 25℃
PULSE TEST
8 4

Tc = −55°C 5
100
4 2
25 2.5

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

100 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON-RESISTANCE

Tc = 25°C
PULSE TEST

10 Tc = −55°C
RDS (ON) (Ω)
⎪Yfs⎪ (S)

25 1

100
1
VGS = 10 V､15V
COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 0.1
0.1 1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) – Tc IDR – VDS

4 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON-RESISTANCE

VGS = 10 V Tc = 25°C

DRAIN REVERSE CURRENT

PULSE TEST PULSE TEST
3

10
RDS (ON) ( Ω)

IDR (A)
ID = 7.5A
2
4

1
1 2 10

1
3 VGS = 0, −1 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5

Ciss
GATE THRESHOLD VOLTAGE

4
(pF)

1000
C

3
Coss
CAPACITANCE

Vth (V)

100

COMMON SOURCE
COMMON SOURCE Crss
10 VDS = 10 V
VGS = 0 V 1
f = 1 MHz ID = 1 mA

Tc = 25°C PULSE TEST

1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
60 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VGS

400 16
VDS
VDD = 100 V
DRAIN-SOURCE VOLTAGE

40
GATE-SOURCE VOLTAGE

300 12
PD (W)

200

400
200 8
20 COMMON SOURCE
VGS ID = 7.5 A
100 4
Tc = 25°C
PULSE TEST

0 0 0
0 40 80 120 160 200 0 10 20 30 40 50

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2
0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 400

ID max (PULSED) *

100 μs *
AVALANCHE ENERGY

300
(A)

10 ID max (CONTINUOUS)
EAS (mJ)

1 ms *
DRAIN CURRENT ID

200

1 DC OPERATION
Tc = 25°C 100

* SINGLE NONREPETITIVE PULSE 0

0.1 Tc=25℃
25 50 75 100 125 150

CURVES MUST BE DERATED

CHANNEL TEMPERATURE (INITIAL)
LINEARLY WITH INCREASE IN Tch (°C)
TEMPERATURE.
VDSS max
0.01 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 5.88 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
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equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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