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    Bipolar Junction Transistors (BJTS) 1

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    ጁንታው ነኝ
    The bipolar junction transistor (BJT) consists of three doped semiconductor regions (emitter, base, collector) that form two back-to-back p-n junctions. In an npn BJT, the emitter and collector are n-type and the base is p-type. In operation, the emitter-base junction is forward biased, injecting electrons into the base, while the collector-base junction is reverse biased. Most electrons pass through the thin base and are collected at the collector, resulting in a much larger collector current than base current. BJTs are commonly used as linear amplifiers, where the input is between the base and emitter and the output is between the collector and

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    Bipolar Junction Transistors (BJTS) 1

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    ጁንታው ነኝ
    57 views19 pages
    The bipolar junction transistor (BJT) consists of three doped semiconductor regions (emitter, base, collector) that form two back-to-back p-n junctions. In an npn BJT, the emitter and collector are n-type and the base is p-type. In operation, the emitter-base junction is forward biased, injecting electrons into the base, while the collector-base junction is reverse biased. Most electrons pass through the thin base and are collected at the collector, resulting in a much larger collector current than base current. BJTs are commonly used as linear amplifiers, where the input is between the base and emitter and the output is between the collector and

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    Bipolar Junction Transistors (BJTs) 1

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    The bipolar junction transistor (BJT) consists of three doped semiconductor regions (emitter, base, collector) that form two back-to-back p-n junctions. In an npn BJT, the emitter and collector are n-type and the base is p-type. In operation, the emitter-base junction is forward biased, injecting electrons into the base, while the collector-base junction is reverse biased. Most electrons pass through the thin base and are collected at the collector, resulting in a much larger collector current than base current. BJTs are commonly used as linear amplifiers, where the input is between the base and emitter and the output is between the collector and

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    57 views19 pages

    Bipolar Junction Transistors (BJTS) 1

    Uploaded by

    ጁንታው ነኝ
    The bipolar junction transistor (BJT) consists of three doped semiconductor regions (emitter, base, collector) that form two back-to-back p-n junctions. In an npn BJT, the emitter and collector are n-type and the base is p-type. In operation, the emitter-base junction is forward biased, injecting electrons into the base, while the collector-base junction is reverse biased. Most electrons pass through the thin base and are collected at the collector, resulting in a much larger collector current than base current. BJTs are commonly used as linear amplifiers, where the input is between the base and emitter and the output is between the collector and

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    of 19

    Bipolar Junction Transistor (BJT)

    • The bipolar junction transistor is a semiconductor


    device constructed with three doped regions.
    • These regions essentially form two ‘back-to-
    back’ p-n junctions in the same block of
    semiconductor material (silicon).
    • The most common use of the BJT is in linear
    amplifier circuits (linear means that the output is
    proportional to input). It can also be used as a
    switch (in, for example, logic circuits).
    npn-BJT Structure
    • The ‘npn’ version of the BJT consists of
    two n regions separated by a p region (as
    the name suggests). A schematic of an npn
    transistor is shown.

    n-type p-type n-type


    BJT Structure
    • The three regions are known as the
    emitter, base and collector regions.
    • Electrical connections are made to each of
    these regions.
    npn-BJT Structure

    E
    Emitter Base Collector C
    (n-type) (p-type) (n-type)

    B
    npn BJT Symbol
    npn BJT Symbol

    C
    B

    E
    pnp BJT Symbol
    • In the symbol for a pnp BJT transistor the
    direction of the arrow on the emitter is
    reversed
    C
    B
    E
    BJT Circuits
    • The CE (Common Emitter) configuration is the
    one most commonly encountered since it provides
    both good current and voltage gain for ac signals.

    • In the CE configuration the input is between the


    base and the emitter. The output is between the
    collector and the emitter.
    Current Directions (Convention)
    • We define currents directions such that the
    collector current (IC) and base current (IB)
    flow into the device whereas the emitter
    current (IE) flows out of the device.
    • THIS IS IMPORTANT; we shall shortly
    treat the transistor as a current node and
    write
    IC + IB = IE (Kirchhoff)
    Current Flow Convention

    E
    Emitter Base Collector C
    (n-type) (p-type) (n-type)
    IE
    IC

    IB B
    npn BJT Structure
    • The emitter (E) is heavily doped (n-type).

    • The collector (C) is moderately doped n-


    type.

    • The base (B) is lightly doped with opposite


    type to the emitter and collector (i.e. p-type
    in the npn transistor).
    B-E and C-B Junctions

    • The p-n junction joining the base and


    emitter regions is called the base-emitter
    (B-E) junction. (or emitter-base, it doesn’t
    really matter)

    • The p-n junction between the base and


    collector regions is called the collector-base
    (C-B) junction.(or base-collector)
    Basic Operation

    • In normal operation for analogue (linear amplifier)


    circuits the emitter-base junction is forward biased
    and the collector-base junction is reverse biased.
    BJT Operation

    • The forward bias between the base and


    emitter injects electrons from the emitter
    into the base and holes from the base into
    the emitter.

    E B C
    E (p) C
    (n) B (n)
    BJT Operation
    • As the emitter is heavily doped and the base
    lightly doped most of the current transport across
    this junction is due to the electrons flowing from
    emitter to base.
    BJT Operation
    • The base is lightly doped and physically
    very thin.
    • Thus only a small percentage of electrons
    flowing across the base-emitter (BE)
    junction combine with the available holes in
    this region.
    BJT Operation
    • Most of the electrons (a fraction α which is close
    to 1, e.g. 0.98) flowing from the emitter into the
    base reach the collector-base (CB) junction.

    • Once they reach this junction they are ‘pulled’


    across the reverse biased CB junction into the
    collector region i.e. they are collected.

    • Those electrons that do recombine in the base


    give rise to the small base current IB.
    BJT Operation
    • The electrons ‘collected’ by the collector at the C-
    B junction essentially form the collector current
    in the external circuit.
    Input- Output Characteristics of
    CE Configuration

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