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    William Stallings Computer Organization and Architecture

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    Jannat Happy
    This document summarizes the key differences between the two main types of semiconductor memory: dynamic RAM (DRAM) and static RAM (SRAM). It discusses their basic construction, operation, advantages, and disadvantages. DRAM uses capacitors to store bits which must be periodically refreshed, making it slower but cheaper and more dense than SRAM which uses flip-flops and does not require refreshing. The document also briefly outlines other memory types like ROM, PROM, EPROM, and flash memory.

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    William Stallings Computer Organization and Architecture

    Uploaded by

    Jannat Happy
    28 views22 pages
    This document summarizes the key differences between the two main types of semiconductor memory: dynamic RAM (DRAM) and static RAM (SRAM). It discusses their basic construction, operation, advantages, and disadvantages. DRAM uses capacitors to store bits which must be periodically refreshed, making it slower but cheaper and more dense than SRAM which uses flip-flops and does not require refreshing. The document also briefly outlines other memory types like ROM, PROM, EPROM, and flash memory.

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    chapter 5

    Original Title

    Ch_5

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    This document summarizes the key differences between the two main types of semiconductor memory: dynamic RAM (DRAM) and static RAM (SRAM). It discusses their basic construction, operation, advantages, and disadvantages. DRAM uses capacitors to store bits which must be periodically refreshed, making it slower but cheaper and more dense than SRAM which uses flip-flops and does not require refreshing. The document also briefly outlines other memory types like ROM, PROM, EPROM, and flash memory.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    28 views22 pages

    William Stallings Computer Organization and Architecture

    Uploaded by

    Jannat Happy
    This document summarizes the key differences between the two main types of semiconductor memory: dynamic RAM (DRAM) and static RAM (SRAM). It discusses their basic construction, operation, advantages, and disadvantages. DRAM uses capacitors to store bits which must be periodically refreshed, making it slower but cheaper and more dense than SRAM which uses flip-flops and does not require refreshing. The document also briefly outlines other memory types like ROM, PROM, EPROM, and flash memory.

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    William Stallings

    Computer Organization
    and Architecture

    Chapter 5
    Internal Memory
    Semiconductor Memory Types
    Semiconductor Memory
    • RAM
    —Misnamed as all semiconductor memory is random
    access
    —Read/Write
    —Volatile
    —Temporary storage
    —Static or dynamic
    Memory Cell Operation
    Dynamic RAM
    • Bits stored as charge in capacitors
    • Charges leak
    • Need refreshing even when powered
    • Simpler construction
    • Smaller per bit
    • Less expensive
    • Need refresh circuits
    • Slower
    • Main memory
    Dynamic RAM Structure
    DRAM Operation
    • Address line active when bit read or written
    —Transistor switch closed (current flows)
    • Write
    —Voltage to bit line
    – High for 1 low for 0
    —Then signal address line
    – Transfers charge to capacitor
    • Read
    —Address line selected
    – transistor turns on
    —Charge from capacitor fed via bit line to sense
    amplifier
    – Compares with reference value to determine 0 or 1
    —Capacitor charge must be restored
    Static RAM
    • Bits stored as on/off switches
    • No charges to leak
    • No refreshing needed when powered
    • More complex construction
    • Larger per bit
    • More expensive
    • Does not need refresh circuits
    • Faster
    • Cache
    • Digital
    —Uses flip-flops
    Logic state 1, C1 is high
    and C2 is lowlow; in this
    state T1 & T4 are off and
    T2 & T3 are on
    Stating RAM Structure
    Static RAM Operation
    • Transistor arrangement gives stable logic state
    • State 1
    —C1 high, C2 low
    —T1 T4 off, T2 T3 on
    • State 0
    —C2 high, C1 low
    —T2 T3 off, T1 T4 on
    • Address line transistors T5 T6 is switch
    • Write – apply value to B & compliment to B
    • Read – value is on line B
    SRAM v DRAM
    • Both volatile
    —Power needed to preserve data
    • Dynamic cell
    —Simpler to build, smaller
    —More dense
    —Less expensive
    —Needs refresh
    —Larger memory units
    • Static
    —Faster
    —Cache
    Read Only Memory (ROM)
    • Permanent storage
    —Nonvolatile
    • Microprogramming (see later)
    • Library subroutines
    • Systems programs (BIOS)
    • Function tables
    Types of ROM
    • Written during manufacture
    —Very expensive for small runs
    • Programmable (once)
    —PROM
    —Needs special equipment to program
    • Read “mostly”
    —Erasable Programmable (EPROM)
    – Erased by UV
    —Electrically Erasable (EEPROM)
    – Takes much longer to write than read
    —Flash memory
    – Erase whole memory electrically
    Organisation in detail
    • A 16Mbit chip can be organised as 1M of 16 bit
    words
    • A bit per chip system has 16 lots of 1Mbit chip
    with bit 1 of each word in chip 1 and so on
    • A 16Mbit chip can be organised as a 2048 x
    2048 x 4bit array
    —Reduces number of address pins
    – Multiplex row address and column address
    – 11 pins to address (211=2048)
    – Adding one more pin doubles range of values so x4 capacity
    Refreshing
    • Refresh circuit included on chip
    • Disable chip
    • Count through rows
    • Read & Write back
    • Takes time
    • Slows down apparent performance
    Typical 16 Mb DRAM (4M x 4)
    Packaging
    Module Organisation
    • Contains only 1 bit per word
    —Number of chips equal to the number of bits per
    word
    • A memory module consisting of 256K 8-bit
    words could be organized
    —18-bit address is needed that supplied to the module
    from external source
    —Address lines of a bus
    • Address is presented to 8256K x 1-bit chips
    —Provides the input/output of 1-bit
    Module
    Organisation (2)
    Error Correction
    • Hard Failure
    —Permanent physical defect
    —Harsh environmental abuse, manufacturing defect
    • Soft Error
    —Random, non-destructive
    —No permanent damage to memory
    —Power supply problem, alpha particle
    —Radio active decay
    • Includes logic for both detecting and correcting
    errors
    Error Correcting Code Function
    Error Correcting Code Function (2)
    • No errors are detected
    —Fetched data bits are sent out
    • An error is detected and possible to correct the
    error
    —Data bits + error correction bits fed into a corrector
    and produced a corrected M bits to be sent out
    • An error is detected, but not possible to correct
    it
    —Reported

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