PD - 97175B

IRLR3110ZPbF
IRLU3110ZPbF
Features
l Advanced Process Technology HEXFET® Power MOSFET
l Ultra Low On-Resistance D
l 175°C Operating Temperature
l Fast Switching VDSS = 100V
l Repetitive Avalanche Allowed up to Tjmax
Description G RDS(on) = 14mΩ
Specifically designed for Industrial applications,
this HEXFET® Power MOSFET utilizes the latest S
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications. D-Pak I-Pak
IRLR3110ZPbF IRLU3110ZPbF

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 63
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 45 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 42
IDM Pulsed Drain Current c 250
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS (Thermally limited) Single Pulse Avalanche Energy d 110 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 140
IAR Avalanche Current c See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Reflow Soldering Temperature, for 10 seconds 300
Mounting Torque, 6-32 or M3 screw y
10 lbf in (1.1N m)y
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 1.05
RθJA Junction-to-Ambient (PCB mount) ij ––– 40 °C/W
RθJA Junction-to-Ambient j ––– 110

HEXFET® is a registered trademark of International Rectifier.

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.077 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 11 14 mΩ VGS = 10V, ID = 38A e
––– 12 16 VGS = 4.5V, ID = 32A e
VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V VDS = VGS, ID = 100µA
gfs Forward Transconductance 52 ––– ––– S VDS = 25V, ID = 38A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 100V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V
Qg Total Gate Charge ––– 34 48 ID = 38A
Qgs Gate-to-Source Charge ––– 10 ––– nC VDS = 50V
Qgd Gate-to-Drain ("Miller") Charge ––– 15 ––– VGS = 4.5V e
td(on) Turn-On Delay Time ––– 24 ––– VDD = 50V
tr Rise Time ––– 110 ––– ID = 38A
td(off) Turn-Off Delay Time ––– 33 ––– ns RG = 3.7Ω
tf Fall Time ––– 48 ––– VGS = 4.5V e
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
G

and center of die contact S

Ciss Input Capacitance ––– 3980 ––– VGS = 0V

Coss Output Capacitance ––– 310 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1820 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 320 ––– VGS = 0V, VDS = 0V to 80V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 63 MOSFET symbol D

(Body Diode) A showing the

ISM Pulsed Source Current ––– ––– 250 integral reverse G

(Body Diode)c p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 38A, VGS = 0V e
trr Reverse Recovery Time ––– 34 51 ns TJ = 25°C, IF = 38A, VDD = 50V
Qrr Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRLR/U3110ZPbF

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
100

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

4.5V 4.5V
3.5V 3.5V
3.0V 3.0V
2.7V 100 2.7V
BOTTOM 2.5V BOTTOM 2.5V
10

1
10
2.5V
0.1 2.5V
≤60µs PULSE WIDTH ≤60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
0.01 1
0.1 1 10 100 1000 0.1 1 10 100 1000
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 150
T J = 25°C
Gfs, Forward Transconductance (S)

125
ID, Drain-to-Source Current (Α)

100 T J = 175°C
100

10 75 T J = 175°C

50
T J = 25°C
1
25 V DS = 10V
VDS = 25V
≤60µs PULSE WIDTH 300µs PULSE WIDTH
0.1 0
0 2 4 6 8 10 12 14 16 0 25 50 75
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current
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 IRLR/U3110ZPbF

100000 5.0
VGS = 0V, f = 1 MHZ
ID= 38A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd

VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd
4.0
10000 VDS= 80V
VDS= 50V
C, Capacitance(pF)

Ciss
3.0

1000
Coss
2.0
Crss
100
1.0

10 0.0
1 10 100 0 10 20 30 40
VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

T J = 175°C
100
100 100µsec

T J = 25°C 1msec
10

10msec
10 DC
1
Tc = 25°C
Tj = 175°C
VGS = 0V
Single Pulse
0.1 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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70 3.0
ID = 63A

RDS(on) , Drain-to-Source On Resistance

60 Limited By Package VGS = 10V
2.5
50
ID, Drain Current (A)

2.0

(Normalized)
40

30
1.5

20
1.0
10

0 0.5
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C) T J , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance

Case Temperature vs. Temperature

10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
0.10 R1 R2
0.1 R1 R2 Ri (°C/W) τi (sec)
0.05 τJ
τJ
τC
0.383 0.000267
τ
τ1 τ2
0.02 τ1 τ2 0.667 0.003916
0.01
0.01 Ci= τi/Ri
Ci i/Ri
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLR/U3110ZPbF

300
15V

EAS , Single Pulse Avalanche Energy (mJ)

ID
TOP 4.4A
250
L DRIVER 6.5A
VDS
BOTTOM 38A
200
RG D.U.T +
V
- DD
IAS A 150
20V
VGS
tp 0.01Ω

100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
50
tp

0
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
QG

10 V
QGS QGD 3.0
VGS(th) Gate threshold Voltage (V)

VG 2.5

2.0
Charge
Fig 13a. Basic Gate Charge Waveform 1.5 ID = 100µA
ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A

L 0.5
VCC
DUT
0 0.0
1K -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( °C )

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature
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 IRLR/U3110ZPbF

100

Allowed avalanche Current vs avalanche

Duty Cycle = Single Pulse
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
Avalanche Current (A)

10
0.05
0.10

Allowed avalanche Current vs avalanche

1
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

150 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
125 ID = 38A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of T jmax. This is validated for

every part type.
100 2. Safe operation in Avalanche is allowed as long as
neither Tjmax nor Iav (max) is exceeded.
3. Equation below based on circuit and waveforms shown in
75 Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
50
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
25 6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
vs. Temperature EAS (AR) = PD (ave)·tav
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IRLR/U3110ZPbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
- „ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
V DS

VGS
D.U.T.
RG
+
-VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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D-Pak (TO-252AA) Package Outline

D-Pak (TO-252AA) Part Marking Information

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IRLR/U3110ZPbF
I-Pak (TO-251AA) Package Outline

I-Pak (TO-251AA) Part Marking Information

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRLR/U3110ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL

16.3 ( .641 ) 16.3 ( .641 )

15.7 ( .619 ) 15.7 ( .619 )

12.1 ( .476 ) 8.1 ( .318 )

FEED DIRECTION FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Notes:
 Repetitive rating; pulse width limited by … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.16mH † This value determined from sample failure population. 100%
RG = 25Ω, IAS = 38A, VGS =10V. Part not tested to this value in production.
recommended for use above this value. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material).
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ Rθ is measured at TJ approximately 90°C.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/09
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