HD8205A

N-Channel Enhancement Mode Power MOSFET

Description D1 D2
The HD8205A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate G1 G2

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other Switching application. S1 S2

Schematic diagram
General Features
● VDS = 20V, ID = 6A
RDS(ON) < 34mΩ @ VGS=2.5V
RDS(ON) < 24mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired Marking and pin Assignment

● Surface Mount Package

Application
●Battery protection
●Load switch
●Power management TSSOP-8 top view

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±10 V
Drain Current-Continuous ID 6 A
Drain Current-Pulsed (Note 1) IDM 25 A
Maximum Power Dissipation PD 1.5 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 21 - V
Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V - - 1 μA

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 HD8205A
Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.7 1.2 V
VGS=4.5V, ID=4.5A - 20 24 mΩ
Drain-Source On-State Resistance RDS(ON)
VGS=2.5V, ID=3.5A - 26 34 mΩ
Forward Transconductance gFS VDS=5V,ID=4.5A - 10 - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 600 - PF
VDS=8V,VGS=0V,
Output Capacitance Coss - 330 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 140 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 10 20 nS
Turn-on Rise Time tr VDD=10V,ID=1A - 11 25 nS
Turn-Off Delay Time td(off) VGS=4.5V,RGEN=6Ω - 35 70 nS
Turn-Off Fall Time tf - 30 60 nS
Total Gate Charge Qg - 10 15 nC
VDS=10V,ID=6A,
Gate-Source Charge Qgs - 2.3 - nC
VGS=4.5V
Gate-Drain Charge Qgd - 1.5 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.7A - 0.75 1.2 V
Diode Forward Current (Note 2) IS - - 1.7 A

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production

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 HD8205A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd ton toff
tr tf
td(on) td(off)
Rl
Vin 90%
D Vout 90%
Vgs Rgen VOUT INVERTED
G 10% 10%

90%
S VIN 50% 50%

10%
PULSE WIDTH

Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

ID- Drain Current (A）

PD Power(W)

TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

Figure 3 Power Dissipation Figure 4 Drain Current
Rdson On-Resistance(mΩ)
ID- Drain Current (A)

Vds Drain-Source Voltage (V) ID- Drain Current (A)

Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

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 HD8205A

Normalized On-Resistance
ID- Drain Current (A)

Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)

Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
Rdson On-Resistance(mΩ)

C Capacitance (pF)

Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)

Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

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 HD8205A

ID- Drain Current (A)

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area
Transient Thermal Impedance
r(t),Normalized Effective

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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 HD8205A

SOT23-6 PACKAGE INFORMATION