Electronic Devices and Circuits-Manual - August 2018

Electronic Devices and Circuits
Lab Manual
Department of Electrical Engineering
FAST-NU, Lahore
Lab Manual of Electronic Devices and Circuits
Created by: Ms. Farrah Fayyaz, Mr. Aurangzeb
Date: August, 2005
Last Updated by: M. Umar Bashir
Date: August, 2018
Approved by the HOD: Dr. S.M Sajid
Date: August, 2018
2
Table of Contents
S.
Title & Description of Experiment Page #
#
1 Diode Characteristics 5
2 Half wave Rectification 10
3 Full Wave Rectification 17
4 Clipping Circuits 24
5 Clamping Circuits 31
6 Regulated DC Power Supplies using Zener Diode 38
7 Design of DC Power Supply 44
8 BJT Characteristics 45
9 Voltage divider and collector feedback bias 49
10 Common emitter amplifier 58
11 Emitter follower amplifier 63
12 Design of BJT Amplifier 68
13 MOSFET transistor characteristics 69
14 DC biasing of MOSFET 78
15 Design of MOSFET Amplifier 83
16 Appendix A: Lab Evaluation Criteria 84
17 Appendix B: Safety around electricity 85
18 Appendix C: Guidelines on preparing lab reports 87
3
List of Equipments
Sr.
Description
No.
1 Oscilloscope 40 MHZ (CS-4135A)
2 Digital Multimeter (Escort 3136A)
3 Function Generator 10 MHZ (EGC-3236A)
4 Digital Power Supply (Matrix MPS-3005 L-3)
5 Bread board
4
Experiment 1
DIODE CHARACTERISTICS
_____________________________________________________________
OBJECTIVE:
The objective of this lab is to become familiar with the characteristics of a
Silicon diode.
EQUIPMENT:
Instruments
DMM
Components
Resistors: 1 kΩ, 1 MΩ
Diode: 1N4007
THEORY:
DIODE TEST
Many digital multi-meters have a diode test position that provides a convenient way
to test a diode. A typical DMM has a small diode symbol to mark the position of the
function switch. When set to diode test, the meter provides an internal voltage sufficient
to forward bias and reverse bias a diode. This internal voltage may vary among different
makes of DMM, but 2.5 to 3.5 V is a typical range of values. The meter provides a
voltage reading or other indication to show the condition of the diode under test.
With one polarity, the DMM should provide the barrier potential of the diode, while
the reverse connection should result in an ‘OL’ response to support the open-circuit
approximation.
I-V CHARACTERISTICS OF A DIODE
Figure-1
5
The i-v characteristics of a silicon or germanium diode have the general shape shown in
Figure-1. The current through an ideal diode is given by the equation:
i = Is (ev/nVT - 1) (Eq 1)
where ‘v’ is the voltage drop across the junction, ‘Is’ is a constant called the saturation
current and depends on the temperature and the particular geometry and material of the
diode. ‘VT’ is a constant called the thermal voltage and its value at 27˚C is 25.2 mV. ‘n’ is
a constant and its value varies between 1 and 2 depending on the material and physical
structure of a diode. The diode’s response is directional and highly non-linear. When
forward biased, (i.e. v is positive) enormous currents can flow through the diode because
of the exponential dependence of i on v. When reverse biased, (i.e. v is negative) the
current approaches –Is. Is is typically very small. Thus the diode acts like a one-way valve
i.e. current can flow in one direction only. When forward biased, the positive end of the
diode is called the anode, and the negative end is called the cathode.
The cut-in-voltage is determined by extending a straight line tangent to the curve

until it hits the horizontal axis. The intersection with x-axis will determine the cut-in-
voltage or barrier voltage Vo.
DC RESISTANCE OF A DIODE
The DC or static resistance of a diode at any point on the characteristics is determined
by the ratio of the diode voltage at that point, divided by the diode current. That is,
RDC = VD/ID ohms (Eq 2)
AC RESISTANCE OF A DIODE
The AC or dynamic resistance, r D at a particular point on the forward i-v
characteristics of diode can be determined using a tangent line drawn on the characteristic
curves. The slope of this line is equal to 1/rD. So,
rD = Δ V / Δ I ohms (Eq 3)
It can be shown through differential calculus that the AC resistance of a diode in

the vertical-rise section of the characteristics is given by
rD= VT /ID ohms (Eq 4)
PRE LAB
1. Calculate ID for the circuit given in Figure 2 using constant voltage drop model of
a diode.
2. Calculate RDC for this value of ID.
6
PROCEDURE
PART 1: Diode test using diode measurement scale of DMM
a) Perform the diode test using DMM diode testing scale and record the values in
Table-1.
TABLE-1
DMM test for diode using diode measurement scale of DMM
Forward
Reverse
Part 2: Forward-bias diode characteristics
Figure-2
a) Construct the network of Figure-2.

b) Record the measured value of the resistor.
Rmeas = _____________
c) Increase the supply voltage until VR reads 0.1 V. Then measure VD and record in
Table-2. Calculate ID using the equation ID (mA)=VR/Rmeas.
TABLE-2
VR (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VD (V)
VR
ID =
R meas
(mA)
7
TABLE-3
VR (V) 1 2 3 4 5 6 7 8 9 10
VD (V)
VR
ID= (mA)
R meas
d) Repeat step-c for the remaining values of VR.

e) Plot ID versus VD for the figure 2. Finish off the curves by extending the lower
region of the curve to the intersection of the axis at I D = 0 mA and VD = 0 V. Label
each curve and clearly indicate data points.
Part 3: Reverse bias
Figure-3
a) Construct the circuit of Figure-3 and record the measured value of R. Since the
reverse saturation current will be relatively small, a large resistance of 1 MΩ is
required if the voltage across R is to be of measurable dimensions.
Rmeas = _________________
b) Measure the voltage VR. Calculate the reverse saturation current from Is =
VR/(Rmeas||Rm). The internal resistance (Rm) of the DMM is included because of the
large magnitude of the resistance R. If internal resistance of DMM is unavailable,
use a typical value of 10 MΩ.
Rm = _________________
(Measured)VR = _________________
8
(Calculated) Is = _________________
c) Determine the DC resistance level of the diode using the equation RDC = (V-VR)/Is.
(Calculated) RDC = ________________
d) Is the resistance level sufficiently high to be considered open circuit equivalent if

appearing in series with resistors in the low kilo-ohm range?
Post Lab:
Part 4: DC Resistance
a) Plot ID versus VD for the Figure-2. Finish off the curves by extending the lower
region of the curve to the intersection of the axis at ID = 0 mA and VD = 0 V. Label
each curve and clearly indicate data points.
b) Using diode curve of Figure-3 determine the diode voltage at diode current levels
indicated in Table-4. Then determine the resistance at each current level.
TABLE-4
ID(mA) VD RDC
0.2
1
5
10
c) Are there any trends in DC resistance as the diode current increases and we move
up the vertical-rise section of the characteristics?
Part 5: AC Resistance
a) Using the equation rD=∆V/∆I, determine the AC resistance of the silicon diode by
drawing a tangent at ID = 9 mA using the diode curve of Figure-3.
(Calculated) rD = _________________
b) Determine the AC resistance at ID = 9 mA using the equation rD = VT/ID for the

silicon diode.
(Calculated) rD = ________________
c) How do the results of part (a) and (b) compare?
Part 6: Cut-in-voltage
Graphically determine the cut-in-voltage (barrier voltage) of the diode from its
characteristics as defined in the theory. Show the straight-line approximations on
graph.
9
Vo = ________________
10
Experiment 2
HALF WAVE RECTIFICATION
_____________________________________________________________
OBJECTIVE:
To become familiar with half-wave and full-wave rectification
EQUIPMENT:
Instruments
Oscilloscope with probes
Function generator
DMM
Components
Resistors: 2.2 kΩ (2), 10kΩ
Diode: 1N4007 (1)
Capacitor 10uF
THEORY:
A rectifier circuit converts AC voltage into DC voltage. Diodes are used in
rectifier circuits because of their ability to conduct in one direction and block current in
other direction.
The half-wave rectifier utilizes alternate half cycles of the sinusoidal input. The
half-wave signal of Figure-1 normally established by a network with a single diode has
an average or equivalent DC level equal to 31.8% of the peak value, Vm.
Figure-1
In selecting diode for a rectifier design, the peak inverse voltage (PIV) or zener
breakdown voltage parameter must be considered carefully. For typical single-diode half
wave rectification systems, the required PIV level is equal to the peak value of the
applied sinusoidal signal. For the four-diode full-wave bridge rectification system, the
required PIV level is again peak value, but for a two-diode center tapped configuration, it
is twice the peak value of the applied signal. The PIV voltage is the maximum reverse-
bias voltage that a diode can handle before entering the breakdown region.
11
PRE-LAB
Read the procedure and draw all expected waveforms.
PROCEDURE
PART 1: CUT-IN-VOLTAGE
Determine the cut-in-voltage, Vo using the diode checking capability of the DMM.
Vo = ________________
Part 2: Half-wave Rectification
a) Construct a circuit of Figure-3. Record the measured value of the resistance.
Rmeas = _______________
b) Set the input to 1000 Hz, 8 Vp-p sinusoidal volts.
Figure-2 Half-wave rectifier
c) Trace the input on Figure-3 as seen on the oscilloscope.
Figure-3
12
d) Using cut-in-voltage of Part-1, determine the theoretical output voltage V out for
Figure-2 and sketch the expected waveform on Figure-4 for one full cycle using the
same sensitivities used in part 2 (c). Indicate the maximum and minimum values on
the output waveform.
Vout in X-Y mode

Vout in voltage-time mode (Expected)
Figure-4
e) Using the oscilloscope with AC/DC switch to DC, obtain the voltage V out and sketch
the waveform on Figure-5.
Vout in voltage-time mode(Observed) Vout in X-Y mode

Figure-5
f) Switch the AC/DC switch of oscilloscope to the AC position. What is the effect on
the output signal Vout? Does it appear that the area under the curve above the zero-
axis equals the area under the curve below the zero-axis? Discuss the effect of the
AC position on waveforms that have an average value over one full cycle.
13
g) Reverse the diode of Figure-2 and sketch the output waveform obtained on the
oscilloscope on Figure-6.

Figure-6
Part 3: Half-wave Rectification (continued)
Figure-7
b) Sketch the expected output waveform Vout on Figure-8. Mark the maximum and
minimum values of the waveform.
Vout in voltage-time mode(Expected) Vout in X-Y mode

Figure-8
14
c) Using the oscilloscope obtain the waveform for Vout and record on Figure-9.

Figure-9
d) Reverse the direction of the diode and record the resulting waveform on Figure-10
as obtained using the oscilloscope.
Figure-10
Part 4: Half-wave Rectification

a) Replace 2.2kΩ resistor with a 10uF capacitor in circuit of figure 2.
b) Using the oscilloscope obtain the waveform for Vout and record on Figure-11.
15

Figure-11
c) Now connect 2.2kΩ resistor in parallel with 10uF capacitor in circuit built in
above step.
d) Using the oscilloscope obtain the waveform for Vout and record on Figure-12.
Vout in X-Y mode

Vout in voltage-time mode(Observed)
Figure-12
e) Observe in DC setting and measure Vout peak and Vr (ripple voltage) as follow
Vout = ________________
Vr = ________________
f) Also measure VDC at output using multi meter.

VDC = ________________
16
g) Now replace 2.2k resistor with 10k resistor and repeat step d and e.
Vout in X-Y mode

Figure-13
Vout = ________________
Vr = ________________
POST LAB
a) How do the results of parts 2(d) and 2(e) compare?
b) Are the waveforms of Figure-8 and Figure-9 relatively close in appearance and
magnitude?
c) Compare the results of Figure-9 and Figure-10. What are the major differences
and why?
d) Compare the result of part 4 (e) and (f).
e) Calculate Vav for all observed values in the above performed experiment.
V rpeak
f) Calculate using data achieved in above experiment for both cases.
V DC
g) Calculate Iav for both cases.
h) Calculate Imax for both cases.
17
Experiment 3
FULL WAVE RECTIFICATION
_____________________________________________________
OBJECTIVE:
To become familiar with the full-wave rectification
EQUIPMENT:
Instruments
Function generator
DMM
24 V center-tapped transformer
Components
Resistors: 2.2 kΩ (4), 10kΩ
Capacitors: 10uF
Diode: 1N4007 (4)
THEORY:
The full-wave rectifier utilizes both halves of the input sinusoid. The full-wave rectified
signal of Figure-1 has twice the average or DC level of the half-wave signal, or 63.6% of
the peak value, Vm.
For large sinusoidal inputs (Vm>>VO, VO is the cut-in-voltage of the diode) the
forward-biased transition voltage of a diode can be ignored. However, for situations when
the peak value of the sinusoidal signal is not that much greater than V O, it can have a
noticeable effect on VDC.
Figure-1
Determine the cut-in-voltage, Vo using the diode checking capability of the DMM.
Vo = ________________
18
Part 2 Full-wave rectification (Bridge configuration)
a) Construct the full-wave bridge rectifier of Figure-2.
Figure-2
b) Sketch the expected output waveform Vout on Figure-3.

Figure-3
c) Using the oscilloscope obtain the waveform for Vout and record on Figure-4. Also
label the maximum and minimum values of the waveform.
19

Figure-4
d) Replace diodes D3 and D4 by 2.2 kΩ resistors. Sketch the expected output voltage
Vout on Figure-5. Label the magnitude of the maximum and minimum values.

Figure-5
e) Using oscilloscope, obtain the waveform for Vout and trace on Figure-6 indicating
the maximum and minimum values.
20
Figure-6
Part 3: Full-wave center-tapped configuration

a) Construct the circuit of Figure-7.
Figure-7
Measure the secondary voltages with the DMM set on AC and record this value
below:
(Measured) Vrms = __________
b) Using Vo of Part-1 for each diode sketch the expected output waveform Vout on
Figure-8.
21

Figure-8
c) Using the oscilloscope obtain the waveform for Vout and record on Figure-9.

Figure-9
Also label the maximum and minimum values of the waveform.
Part 4: Full-wave rectifier with filter capacitor:
a) Connect a capacitor in parallel with 2.2k resistor of figure 7.

b) Using the oscilloscope obtain the waveform for Vout and record on Figure 10.
22

Figure-10
c) Observe in DC setting and measure Vout peak and Vr(ripple voltage) as follow
Vout = ________________
Vr= ________________
d) Now replace 2.2k resistor with 10k resistor and repeat part b and c.

Figure-11
Vout = ________________
Vr= ________________
Compare the result of parts (c) and (d).
23
POST LAB
a) How do the waveforms of Parts 2(b) and 2(c) compare?
b) How do the waveforms of Figure-5 and Figure-6 compare?
c) What was the major effect of replacing the two diodes with resistors?
d) How do the waveforms of Parts 3(b) and 3(c) compare?
e) Explain the reason for difference in values of Vr in part 4 (c) and (d)?
f) Calculate Vav for all in observed values in the above performed experiment.
g) Calculate Iav.
h) Calculate Imax.
24
Experiment 4
CLIPPING CIRCUITS
_____________________________________________________________
OBJECTIVE:
To become familiar with the function and operation of limiters
EQUIPMENT:
Instruments
DMM
Function generator
Components
Resistor: 2.2 kΩ
Diode: 1N4007 (2)
Zener diode: (6.8 V)
THEORY:
The primary function of a limiter is to limit a portion of an applied alternating
signal. The process is typically performed by a resistor-diode combination. A DC source
can also be incorporated to provide additional shifts of the applied voltage.
A double limiter limits both the positive and negative peaks of an input
waveform. Single limiters limit either the positive or negative peak.
PROCEDURE:
Determine the cut-in-voltage for the diode using the diode-checking capability of
the DMM. Or assume VO = 0.7 V for silicon diode.
Part 2: Single limiter

a) Construct the limiting circuit of Figure-1. Give a sinusoidal input voltage with peak
value at least greater than VO. (Or give an input of 8 Vp-p sinusoidal at a frequency of
1000 Hz).
Figure-1
Vin (amplitude) = ____________

Vin (frequency) = ____________
25
b) Sketch the expected output waveform for vout on Figure-2. In particular find vout when
the applied signal is at its positive and negative peak and zero volts.

Figure-2
(Calculated) vout (amplitude) when vin is at +ve peak = _______________
(Calculated) vout (amplitude) when vin is at –ve peak = _______________
(Calculated) vout (amplitude) when vin is 0 V = _______________
c) Observe the output voltage using oscilloscope and trace the waveform on Figure-3.

Figure-3
26
d) Reverse the direction of diode in Figure-1 as shown in figure-4.
Figure-4
e) Sketch the expected output waveform for vout on Figure-5. In particular find vout when
the applied signal is at its positive and negative peak and zero volts.

Figure-5
(Calculated) vout (amplitude) when vin is at +ve peak = _______________
(Calculated) vout (amplitude) when vin is at –ve peak = _______________
(Calculated) vout (amplitude) when vin is 0 V = _______________
f) Observe the output voltage using oscilloscope and trace the waveform on Figure-6.

Figure-6
27
g) Replace the diode in Figure-4 with a 6.8 V zener diode and sketch the expected
output waveform in Figure-7.

Figure-7
h) Sketch the observed output waveform in Figure-8.

Figure-8
Part 3: Biased single limiter
a) Construct the biased single limiter circuit of Figure-9. Give an input voltage of
any amplitude at least greater than VO (or give 8 Vp-p at a frequency of 1000 Hz).
28
Figure-9
b) Sketch the expected output waveform for vout on Figure-10.

Figure-10
c) Observe the output voltage using oscilloscope and trace the waveform on Figure-
11.

Figure-11
29
Part 4: Double limiter
a) Construct the double limiter circuit of Figure-12. Give a sinusoidal input voltage
of amplitude at least greater than VO (or give the sinusoidal input of 8 Vp-p at a
frequency of 1000 Hz).
Figure-12
b) Sketch the expected output waveform for vout on Figure-13.

Figure-13
30
c) Observe the output voltage using oscilloscope and trace the waveform on Figure-
14.

Vout in X-Y mode
Figure-14
Post Lab:
a) How does the waveform of Figure-2 compare with the expected result of Figure-3?
b) How does the waveform of Figure-4 compare with the expected result of Figure-4?
c) How does the waveform of Figure-9 compare with the expected result of Figure-9?
d) How does the waveform of Figure-12 compare with the expected result of Figure-
12?
31
Experiment 5
CLAMPING CIRCUITS
________________________________________________________________________
OBJECTIVE:
To become familiar with the function and operation of clampers/ dc restorer
circuits
EQUIPMENT:
Instruments
Function generator
DMM
Components
Resistors: 100 Ω, 1 kΩ, 100 kΩ
Diode: 1N4007
Capacitor: 1μf (2)
THEORY:
Clampers are designed to clamp an alternating signal to a specific level without
altering the peak-to-peak characteristics of the waveform. The best approach to the
analysis of clampers is to use a step-by-step approach. The first step should be an
examination of the network for that part of the input signal that forward biases the diode.
With the diode forward biased the voltage across the capacitor and across the output
terminals can be determined. For the rest of the analysis it is then assumed that the
capacitor will hold on to the charge and voltage level established during this interval of
the input signal. The next part of the input signal can then be analyzed to determine the
effect of the stored voltage across the capacitor and the open-circuit state of the diode.
The analysis of a clamper can be quickly checked by simply noting whether the
peak-to-peak voltage of the output signal is same as the peak-to-peak voltage of the
applied signal. This check is not sufficient to be sure the entire analysis was correct but it
is a characteristic of clampers that must be satisfied.
A voltage doubler is composed of two sections in cascade, a clamp and a peak
rectifier. When excited by a sinusoid the clamping section provides a clamped signal with
one peak clamped to zero volts, and other peak at twice the maximum amplitude. In
response the peak detector section provides a voltage of double the magnitude of input
sinusoid. Because the output voltage is double the input peak the circuit is called a
voltage doubler.
PROCEDURE:
Determine the cut-in-voltage for the diode using DMM. Or assume VO = 0.7 V.
VO = ________________
32
Part 2:
Figure-1
b) Set the input voltage equal to square wave of arbitrary levels i.e. –3 V and +2 V
and 1 kHz.
c) Using the value of VO from Part-1, calculate VC and Vout for the interval of Vin that
causes the diode to be in the ON state.
(Calculated) VC = _________________
(Calculated) Vout = _________________
d) Using the results of Part 2(c), calculate the level of V out after Vin switches to the
other level and turns diode OFF.
(Calculated) Vout = _________________
e) Using the results of Parts 2(c) and 2(d) sketch the expected waveform for V out in
Figure-2 for one full cycle of Vin.

Figure-2
33
f) Use the oscilloscope to view output waveform Vout. Record the resulting waveform
in Figure-3.

Figure-3
g) Reverse the diode of Figure-1. Determine the levels of V C and Vout for the interval
of Vin that causes the diode to be in the ON state.
(Calculated) VC = _________________
(Calculated) Vout = _________________
h) Using the results of Part 2(g) calculate the level of V out after Vin switches to the
other level and turns diode OFF.
(Calculated) Vout = _________________
i) Using the results of Parts 2(g) and 2(h) sketch the expected waveform for V out on
Figure-4.

Figure-4
j) Using oscilloscope view output waveform Vout. Record the resulting waveform in
Figure-5.
34

Figure-5
Part 3: Effect of R
a) Determine the time constant (τ=RC) for the network of Figure-1 for the interval of
the input signal that causes the diode to assume the OFF state and be approximated
by an open circuit.
(Calculated) τ = _____________
b) Calculate the period of the applied signal and then determine half the period to
correspond with the time interval that the diode is in the OFF state during the first
cycle of the applied signal.
(Calculated) T = ___________
(Calculated) T/2 = ___________
c) The discharge period of an RC network is about 5τ. Calculate the time interval
established by 5τ using the result of Part 3(a) and compare to T/2 calculated in Part
3(b).
(Calculated) 5τ = _____________
d) Change R to 1 kΩ and calculate the new value of 5τ.
(Calculated) 5τ = _____________
e) How does the 5τ calculated in Part 5(d) compare to T/2 of the applied signal? How
would you expect the new value of R to affect the output waveform Vout?
35
f) For R=1 kΩ in Figure-1 give sinusoidal input. Record the output waveform on
Figure-6. Use waveform using DC position on oscilloscope.
Figure-6
g) Switch the input to square wave signal and observe the output. Record it in Figure-
7.
Figure-7
h) Change R to 100 Ω and calculate the new value of 5τ.

(Calculated) 5τ = ____________
i) How does the 5τ calculated in the previous part compare to T/2 of the applied
signal? What effect will the lower value of R have on the waveform?
j) For R=100 Ω in Figure-1 and give sinusoidal input. Record the output waveform on
Figure-8. Observe waveform using DC position on oscilloscope.
36
Figure-8
k) Switch to square wave signal and record the observation in Figure-9.
Figure-9
Part 4: Voltage Doubler

Figure-10
b) Give a sinusoidal input of 8 Vp-p at f =1 kHz.

c) Draw the expected output voltage on Figure-11.
37
Figure-11
d) View vout on oscilloscope and trace the result on Figure-12.
Figure-12
Post Lab:
a) How will you compare the waveform of Figure-3 with the expected waveform of
Figure-2?
b) How will you compare the waveform of Figure-5 with the expected waveform of
Figure-4?
c) Thinking back to the clampers analyzed in this experiment why is it important for
the time interval specified by 5τ to be much larger than T/2 of the applied signal?
d) Comment on the resulting waveform of Figure-6 and 7. Is it distorted as you
expected it to appear? Why?
e) Comment on the resulting waveform of Figure-8 and 9. Compare it to the
waveforms for R= 100 kΩ and R = 1 kΩ?
f) Based on results of part 3 establish a relationship between 5τ and the period of the
waveform (T) that will ensure that the output waveform has the same characteristics
as the input. Note that the relation is between 5τ and T and not T/2.
g) Explain the behavior of the circuit shown in figure 10?
38
Experiment 6
REGULATED DC POWER SUPPLIES USING ZENER DIODE
______________________________________________________
OBJECTIVE:
To design a regulated DC power supply using a zener shunt regulator. To learn to use a
three terminal IC voltage regulator and compare its characteristics with that of the zener
shunt regulator.
EQUIPMENT:
Instruments
DMM
DC Power Supply
Components
Resistors: 1k Ω
Variable= 50k Ω
Zener diode: 6.8V
IC LM7805 (5V)
THEORY:
The schematic diagram of a zener shunt regulator is depicted in circuit diagram of
figure-1. The unregulated power supply input Vs to the shunt regulator is obtained from a
diode bridge rectifier with filter capacitor. The zener diode employed in the circuit should
have a breakdown voltage that is a few volts higher than the lowest value V smin of the
input voltage Vs. The zener diode thus operates in the reverse breakdown region, and the
voltage Vo across it (the load voltage) is held fairly constant despite the fairly large
voltage swing of the input signal Vs.
Figure-1
39
The zener diode can be modeled as a voltage source V in series with a dynamic
Zo
resistance rz. Replacing the zener diode by this model, analysis of the circuit of figure
below yields the following expression for the output voltage Vo of the regulator:
Figure-2
R r
V o =V zo +V s z −I L (R ∥ r z ) ( Eq 1)
R+r z R+ r z
Line Regulation
Line regulation means to observe change in output voltage while input voltage is varying
with no load. The line regulation of a voltage regulator is the ratio of the output voltage
ripple to the input voltage ripple. We have
∆Vo rz
Line regulation= = (Eq 2)
∆ V s R+r z
Load regulation
The load regulation means finding change in output voltage while input is fixed but load
is varying. The load regulation of a voltage regulator is the ratio of the change in output
voltage to the load current change that caused it. We have
∆Vo
Load regulation= =−( r z ∥ R) ( Eq 3)
∆IL
The lower the line or load regulation, the better the voltage regulator. Note that increasing
the value of the resistor R lowers the line regulation. There is, however, a limit on how
large R can be. If R is too large the zener diode can come out of the breakdown and the
regulator will not work as intended. The value of R should be such that the zener diode
remains in breakdown even when the supply voltage is at its lowest i.e., when V s = Vsmin.
Let I be the minimum value of zener current I that will be tolerated. The value of I
Zmin Z Zmin
chosen should lie in the reverse breakdown region of the diode characteristic. Let I beLmax
40
the highest possible load current I . To maintain the minimum zener current I , we select
L Zmin
R as follows:
V Smin−V Zo−I Zmin r z

R= (Eq 4)
I Zmin + I Lmax
Three terminal voltage regulators

The LM78XX is a series of three terminal IC voltage regulators that delivers positive
output voltages. The XX denotes the output voltage for example the LM7805 is a 5V
regulator chip. These IC voltage regulators have internal current limiting and other safety
features, and have characteristics that are far superior to zener shunt regulators. The three
terminals of the regulator are the input, ground, and output terminals. A three terminal
regulator can be substituted in place of the resistor R and the zener diode in the circuit of
Figure-1. The input terminal of the regulator connects to the unregulated power supply,
the output terminal to the load, and the ground terminal forms the common node.
PRE LAB:
1. Assume that the full-wave rectifier with capacitor filter that you designed in
experiment 4 is the input to a zener shunt regulator. Use the zener diode 6.8V
for your shunt regulator. The regulator should supply 6.8V to a load that has a
minimum resistance of 1KΩ. Choose an appropriate value for the zener series
resistor. Show all your design work and state any assumptions.
2. Determine the theoretical values for the line regulation and load regulation of
your regulator.
Note: The following are the specifications of the zener diode
Vz = 6.8V, IZmax = 5mA Use the zener resistance rz = 20Ω and IZK = 0.2mA to calculate
the value of Vzo for the zener diode model.
PROCEDURE:
Part 1:
Line Regulation
1. Connect the circuit as given below
41
Figure-3
3. Recode the values in the following tables:
TABLE-1
VS 5 6 6.5 7 7.5 8 8.5 9 9.5 10
Vout
VS 10.5 11 11.5 12 13 14 15 16 17 18
Vout
TABLE-2
VS 6 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 8.4

IZ
VS 8.8 9 9.5 10 10.5 11 11.5 12 13 14
IZ
3. Find the VZK =__________ (knee voltage) from the above readings
4. Find IZK = ________ (knee current) from the above readings.
5. Now find rZ = ∆Vout/∆IZ = ________________
6. Find Line regulation = ∆Vout/∆Vs
Load Regulation
42
1. Connect circuit as follow:
Figure-4
2. Record the values in following tables
TABLE-3
RL 1K 5K 10K 20K 30K 40K 50K

VOUT
IL
3. Find Load regulation = ∆Vout/∆IL
Part 2:
Line Regulation
1. Replace the zener diode with one LM7805 voltage regulator IC in figure-3.
2. Pin configuration of LM7805 is given below
3. Repeat Line Regulation for IC and record in following tables

TABLE-4
VS 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11
Vout
43
VS 12 13 14 15 16 17 18 19 20
Vout
TABLE-5
VS 6 6.4 6.6 6.8 7 7.2 7.4 7.6 7.8 8 8.4 8.8 9 9.5 10
IZ
4. Find the VZK =__________ (knee voltage) from the above readings,
5. Now find rZ = ∆Vout/∆IZ = ________________
6. Find Line regulation = ∆Vout/∆Vs =___________________
Load Regulation
1. Replace the zener diode with one LM7805 voltage regulator IC in figure-4.
1. Repeat load regulation for IC and record the values in following tables
TABLE-6
RL 1K 5K 10K 20K 30K 40K 50K

VOUT
IL
3. Find Load regulation = ∆Vout/∆IL
POST LAB:
a) Replace the zener diode in Fig-1 by its circuit model and derive Eq-1.
b) Draw characteristics for zener regulator and regulator IC (LM7805) separately
c) Find rz from graph for both cases.
d) Eq 4 specifies the value of the series resistor R. Explain how this equation is
obtained.
44
Design Experiment 7
Design of DC Power Supply
Problem Statement
Design a 6.8 V DC Power Supply with a AC Sinusoidal Voltage Source. The
Zener Diode is specified to have V z=6.8 V at I z=5 mA ,r z=20 Ω and I zk =0.2 mA.
 Draw the Circuit of Power Supply SLO 4.1

 Find the unknowns in the circuit. SLO 4.2
o Input Supply Voltage
o Resistor Value before Diode (if required)

o Average and RMS DC Voltage after Rectification
o Resistor Value if placed after rectification for step down
 Implement the circuit SLO 4.3

 Measure the Voltages and Current and write in the form of a table. SLO 4.4
 Compare the measured values with theoretical values and find the % error.
SLO
4.5
 Find and discuss limitations of the design Circuits SLO 4.6
o Load Regulation
o Line Regulation
o Minimum Value of RL for which diode still operates in breakdown region.
45
Experiment 8
BJT CHARACTERISTICS
_____________________________________________________________
OBJECTIVE:
To observe the collector characteristics of BJT
EQUIPMENT:
Instruments
DMM
Components
Resistors: 1 kΩ, 330 kΩ
Variable Resistors: 5 kΩ, 1 MΩ
Transistor: 2N3904 or equivalent
THEORY:
The BJT consists of three semiconductor regions: emitter (n-type), base (p-type),
and collector (n-type). Such a transistor is called an npn transistor. Another transistor, a
dual of the npn has a p-type emitter, an n-type base and a p-type collector and is
appropriately called a pnp transistor.
The transistor consists of two pn junctions, the emitter-base junction (EBJ) and
the collector-base junction (CBJ). Different modes of operation of the BJT are obtained
depending on the bias condition (forward or reverse) of each of these junctions.
The relationships between the voltages and the currents associated with a bipolar
junction transistor under various operating conditions determine its performance. These
relationships are collectively known as the characteristics of the transistor. These
characteristics are mentioned in the data sheet of the transistor given by the manufacturer.
It is one of the objectives of this laboratory experiment to experimentally measure these
characteristics and to compare them to their published values.
PROCEDURE:
b) Set the voltage VRB to 3.3 V by varying the 1 MΩ variable resistor. This adjustment
will set IB = VRB/RB to 10 μA as indicated in Table-1.
c) Then adjust VCE to 2 V by varying the 5 kΩ variable resistor as required by the first
reading of Table-1.
d) Measure the voltages VRC and VBE and record in Table-1.
46
Figure-1
e) Vary the 5 kΩ variable resistor to increase V CE from 2 V to the values appearing in

Table-1. Note that IB is maintained at 10 μA for a range of VCE levels.
f) For each value of VCE, measure and record VRC and VBE.
g) Repeat steps (b) through (f) for all values of VRB indicated in Table-1. Each VRB
will establish a different level of IB for the sequence of VCE values.
h) After all data have been obtained, compute the values of IC from IC=VRC/RC and IE
from IE=IC+IB. Use the measured resistor value for RC.
i) For each line of Table-1 calculate the corresponding levels of α and β using α=I C/IE
and β=IC/IB and complete the Table-1.
47
Table-1
RC (measured) =
VRB IB VCE VRC IC VBE IE

α β
(V) (μA) (V) (V) (mA) (V) (mA)
(calc) (calc)
(meas) (calc) (meas) (meas) (calc) (meas) (calc)
2
4
6
3.3 10 8
10
12
14
16
2
4
6
6.6 20 8
10
12
14
2
4
9.9 30 6
8
10
2
4
13.2 40
6
8
2
16.5 50 4
6
POST LAB:
48
1) Using data of Table-1, plot the collector characteristics of the transistor on graph
paper. This will be the plot of IC versus VCE for the various values of IB. Choose an
appropriate scale for IC and label each IB curve. VCE should be along x-axis and IC
should be along y-axis. You would get 5 curves for five different values of I B.
Extrapolate the graphs to meet the Origin.
Answer these questions by looking at the values from the table and from the graph:
a) Is there a significant variation in α and β from one region of characteristics to

another?
b) In which regions are the largest values of β found? Specify using the relative levels
of VCE and IC.
c) In which region are the smallest values of β found? Specify using the relative levels
of VCE and IC.
d) Find the largest and smallest levels of β and mark their locations on the graph paper
using notation βmax and βmin.
e) In general, did β increase or decrease with increase in IC?
f) In general, did β increase or decrease with increase in VCE?
2) Use a second graph paper to plot the VBE vs IB characteristics. Take VBE on the x-axis
and IB on the y-axis. Explain what the resulting curve means.
3) Use another graph paper to plt the V CE vs VBE characteristics. Take VBE along x-axis
and VCE along y-axis. Explain what the resulting curve means.
49
Experiment 9
VOLTAGE DIVIDER AND COLLECTOR FEEDBACK BIAS
________________________________________________________________________
OBJECTIVE:
To determine the quiescent operating conditions of the voltage divider and collector
feedback bias BJT configurations
EQUIPMENT:
Instruments
DMM
Components
Resistors: 680 Ω, 1.8 kΩ, 2.2 kΩ (2), 3.3 kΩ, 6.8 kΩ, 33 kΩ, 390 kΩ, 1MΩ
Transistors: C828, 2N3904
THEORY:
Bipolar transistors operate in three modes: cutoff, saturation and active. In each of
these modes, the physical characteristics of the transistor and the external circuit
connected to it uniquely specify the operating point of the transistor. In the cutoff mode,
there is only a small amount of reverse current from emitter to collector, making the
devise an open switch. In the saturation mode there is a maximum current flow from
collector to emitter, making the device a closed switch. The amount of this current
depends upon the external circuit connected to the transistor. Both of these modes are
used in digital circuits.
Active region of the transistor characteristics is employed for amplification with
minimum distortion. A DC voltage is applied to the transistor, forward biasing the base-
emitter junction and reverse biasing the base-collector junction, typically establishing a
quiescent point near or at the center of the linear region.
In this experiment we will investigate two biasing networks: voltage divider bias
and collector feedback bias configuration.
VOLTAGE DIVIDER BIAS
The voltage-divider bias circuit employs a feedback arrangement that makes the
base-emitter and collector-emitter voltages primarily dependent on the external circuit
elements and not the beta of the transistor. Thus, even though the beta of the individual
transistors may vary considerably, the location of the Q-point on the load line will remain
essentially fixed.
COLLECTOR FEEDBACK BIAS
In collector feedback bias circuit the base resistor is connected to the collector
terminal of the transistor and not to fixed supply voltage V cc. Thus the voltage across the
base resistance of the collector feedback configuration is a function of the collector
voltage and in turn to collector current. In particular this circuit demonstrates the
principal of negative feedback, in which the tendency of an output variable to increase or
decrease will result in a decrease or increase in the input variable respectively. For
instance, if Ic increases, Vc will reduce which will lower the level of I B, thus offsetting the
increase of Ic. The result is a design less sensitive to variations in its parameters.
50
PROCEDURE:
Part 1: Determining β
A) Construct the circuit of Figure-1 using 2N3904 transistor. Insert the measured
resistance values.
Figure-1
RB(meas) =__________
RC(meas) =__________
RE(meas) =__________
b) Measure the voltages VB and VRC.
(Measured) VB = _________
(Measured) VRC = _________
c) Using the measured resistor values calculate the resulting base current,
IB = VRB / RB = (VCC – VB) / RB = _________
The voltage VRB was not measured directly for determining IB because of the
loading effect of the meter across the high resistance of RB.
d) Also calculate the collector current,

IC = VRC / RC = _________
e) Calculate β (=IC/IB) of the transistor and use this value for all the calculations in this
experiment.
β (3904) = ___________
51
f) Replace 2N3904 in the circuit of Figure-1 by C828 transistor. Repeat the above
steps to find β of this transistor.
(Measured) VB = _________
(Measured) VRC = _________
IB = _________
IC = _________
β (C828) = _________
Part 2: Voltage divider configuration
a) Construct the circuit of Figure-2 using 2N3904 transistor.
Figure-2
b) Record the measured value of each resistor.

R1meas = ___________
R2meas = ___________
RCmeas = ___________
REmeas = ___________
c) Using value of β determined in Part 1 for both transistors, calculate the theoretical
values of VB, VE, VC, VCE, IE, IC, and IB for the circuit of Figure-2 and record in
Table-1.
52
d) Measure VB, VE, VC and VCE and record in Table-2. Calculate currents IE and IC.
Also measure voltages VR1 and VR2 and calculate currents I1 and I2 (I1=VR1/R1 and
I2=VR2/R2) using measured resistor values. Calculate the current IB using
Kirchhoff’s current law (IB=I1-I2). Insert the calculated current levels for I E, IC and
IB in Table-2.
e) Replace the 2N3904 transistor in your circuit of Figure-2 with C828 transistor.
Measure the voltages VB, VE, VCE, VRC, VR1 and VR2. Also calculate IC, IE I1, I2 and
determine IB using measured values of resistors. Record all the values in Table-2.
f) Calculate the percentage change in β, IC, VCE and IB from the data in Table-2 and
record your results in Table-3. Use following equations for your calculations:
|β 828 −β 3904| |I C ,828−I C ,3904|

%∆ β = |β 3904| x 100% %∆ Ic = |I C ,3904| x 100%
|V CE,828−V CE,3904| |I B,828−I B,3904|

%∆ VCE = |V CE,3904| x 100% %∆ IB = |I B,3904| x 100%
Table-1
Theoretical Calculated Values

VC
Transistor VB VE VCE IB IC IE
(volts
Type (volts) (volts) (volts) (μA) (mA) (mA)
)
2N3904
C828
Table-2
Measured Values Calc from measured values

Transistor VB VC VE VCE IB IC
IE (mA)
Type (volts) (volts) (volts) (volts) (μA) (mA)
2N3904
C828
Table-3
(Note: The calculations in Table-3 are for data in between the two rows of Table-2)
%∆β % ∆ IC % ∆ VCE % ∆ IB
53
Part 3: Collector feedback configuration
Figure-3
Record the measured value of each resistor.

RBmeas = ___________
RCmeas = ___________
b) Using value of β determined in Part 1 for both transistors, calculate the theoretical
values of IB, IC, VB, VC and VCE and record in Table-4.
c) Measure VB, VC and VCE and record in Table-5. Also calculate currents IB and IC
using measured resistance values and record in Table-4.
d) Replace the 2N3904 transistor in your circuit of Figure-3 with C828 transistor.
Measure the voltages VB, VC and VCE and insert in Table-5. Also calculate the
currents IB and IC using measured values of resistors. Insert the values of currents in
Table-5.
e) Calculate the percent change in β, IC, VCE and IB from the data in Table-4 and
record your results in Table-5. Use following equations for your calculations.
Record your results in Table-6
|β 828 −β 3904| |I C ,828−I C ,3904|

%∆ β = |β 3904| x 100% %∆ Ic = |I C ,3904| x 100%
54
|V CE,828−V CE,3904| |I B,828−I B,3904|

%∆ VCE = |V CE,3904| x 100% %∆ IB = |I B,3904| x 100%
Table-4
Transistor
VB VC VCE IB IC
Type
2N3904
C828
Table-5
Transistor VB VC VCE
IB (μA) IC (mA)
Type (volts) (volts) (volts)
2N3904
C828
Table-6
%∆β % ∆ IC % ∆ VCE % ∆ IB
Part 4: Collector Feedback Configuration (with RE)
55
Figure-4
Record the measured value of each resistor.

RBmeas = ___________
RCmeas = ___________
REmeas = ___________
b) Using value of β determined in Part 1 for both transistors, calculate the theoretical
values of IB, IC, IE, VB, VC and VCE and record in Table-7.
c) Measure VB, VC, VE and VCE and record in Table-8. Also calculate currents IB, IC
and IE using measured resistance values and record in Table-8.
d) Replace the 2N3904 transistor in your circuit of Figure-4 with C828 transistor.
Measure the voltages VB, VC, VE and VCE and insert in Table-8. Also calculate the
currents IB, IC and IE using measured values of resistors. Insert the current values in
Table-8.
e) Calculate the percent change in β, IC, VCE and IB from the data in Table-8 and
record your results in Table-9. Use following equations for your calculations.
|β 828 −β 3904| |I C ,828−I C ,3904|

%∆ β = |β 3904| x 100% %∆ Ic = |I C ,3904| x 100%
56
|V CE,828−V CE,3904| |I B,828−I B,3904|

%∆ VCE = |V CE,3904| x 100% %∆ IB = |I B,3904| x 100%
Table-7
Transistor
VB VC VCE IB IC
Type
2N3904
C828
Table-8
Transistor VB VC VE VCE
IB (μA) IC (mA) IE (mA)
Type (volts) (volts) (volts) (volts)
2N3904
C828
Table-9
%∆β % ∆ IC % ∆ VCE % ∆ IB
57
POST LAB:
a) For the three configurations investigated in this experiment, how does the Q point
location (defined by IC and VCE) change when the 2N3904 transistor was replaced by
C828?
b) Which configuration appears to have the better stability factor?
c) How do the calculated and measured values of Table-1 and Table-2 compare for
C828 transistor?
d) How do the calculated and measured values of Table-3 and Table-4 compare for
C828 transistor?
e) How do the calculated and measured values of Table-4 and Table-5 compare for
2N3904 transistor?
f) How do the calculated and measured values of Table-7 and Table-8 compare for
2N3904 transistor?
g) How do the calculated and measured values of Table-7 and Table-8 compare for
C828 transistor?
58
Experiment 10
COMMON EMITTER AMPLIFIER
________________________________________________________________________
OBJECTIVE:
The objective is to measure the ac and dc voltages in a common-emitter amplifier. To
obtain measured values of voltage amplification (Av), input resistance (Ri) and output
resistance (Ro) for loaded and unloaded operation.
EQUIPMENT:
Instruments
Oscilloscope
DMM
Function Generator
Components
Resistors: 1 kΩ (2), 3.3 kΩ (2), 12 kΩ, 56 kΩ
Capacitors: 10 μF (2), 100μF
THEORY:
The common emitter amplifier configuration provides large voltage gain
(typically tens to hundreds) and provides moderate input and output resistance. The ac
signal voltage gain is defined as
Av = Vo/Vin ( Eq 1)
The input resistance, R i is the resistance of the amplifier as seen by the input
signal. The output resistance, Ro is the resistance seen from load looking into the output
of the amplifier.
For the voltage divider dc bias configuration, all dc bias voltages can be
approximately determined without knowing the exact value of transistor beta. The
transistor ac dynamic resistance re, can be calculated using equation:
re = VT/IE (Eq 2)
AC VOLTAGE GAIN: The ac voltage gain of a common emitter amplifier (under no-load)
can be calculated using equation:
Av = -Rc/re (Eq 3)
AC INPUT RESISTANCE: The ac input resistance is calculated using equation:

Ri = R1||R2||(β+1)(re) (Eq 4)
AC OUTPUT RESISTANCE: The ac output resistance is calculated using equation:

Ro = Rc …… (Eq 5)
59
PROCEDURE:
Part 1: Common-emitter dc bias
a) Construct the circuit as shown in Figure-1.
Figure-1
b) Record the measured values of all the resistors.
R1=_____________
R2=_____________
RC=_____________
RE=_____________
c) Calculate dc bias values of the circuit. Record calculated values below:
(Calculated) VB = ____________
(Calculated) VE = ____________
(Calculated) VC = ____________
(Calculated) IE = ____________
(Calculated) re = ____________
d) Measure the dc voltages
(Measured) VB = ____________
(Measured) VE = ____________
(Measured) VC = ____________
60
e) Calculate the dc emitter current using measured values of VE and RE

IE=VE/RE
IE = ____________
f) Calculate the ac dynamic resistance, re using IE calculated from measured values

re = VT/IE
re = ____________
Part 2: AC Voltage Gain
A) Calculate the amplifier voltage gain for a bypassed emitter using Equation- (iii).
(Calculated) Av = ____________
b) Apply an ac input signal, Vsig=10mVp at f=1 kHz. Observe and measure the ac
output voltage, Vout on the oscilloscope.
(Measured) Vout = ____________
c) Calculate the circuit no-load voltage gain using measured values.

Av =Vout/Vsig
(Measured) Av = ____________
d) Using the oscilloscope observe and record input waveform, V sig and output voltage
waveform, Vout in Figure-2
Figure- 2
61
Part 3: AC Input Resistance
a) Calculate Ri using Equation- (iv).

(Calculated) Ri = ___________
b) To measure RI connect an input measurement resistor, Rx=1 kΩ as shown in

Figure-3. Apply input voltage Vsig = 10 mV p− p ¿and measure Vin for an undistorted
¿
output.
Figure-3
c) Solving for Vin using

Ri
Vin= Vsig
Ri+ Rx
we get,
Vin
Ri= Rx
Vsig−Vin
(Measured) Ri = _____________
Part 4: AC Output Resistance
a) Calculate Ro using Equation- (v).

(Calculated) Ro = ____________
b) Remove input measurement resistor, Rx. For input of Vsig,p-p=20mV, measure the
output voltage, Vout.
(Measured, unloaded output voltage) Vout = ____________
62
c) Now connect load RL=3.3 kΩ and measure Vout.
(Measured, loaded output voltage) VL = ____________
d) The output resistance can be obtained from

RL
VL= Vout
Ro+ RL
for which
Vout −VL
Ro= RL
VL
Ro = __________
63
Experiment 11
EMITTER FOLLOWER AMPLIFIER
________________________________________________________________________
OBJECTIVE:
The objective is to measure the dc and ac voltages in emitter follower (common-
collector) amplifier and also to measure the values of voltage amplification (A v), input
resistance (Ri) and output resistance (Ro)
EQUIPMENT:
Instruments:
Oscilloscope
DMM
Function Generator
Components:
Resistors: 120 Ω, 1 kΩ, 12 kΩ, 33 kΩ, 100 kΩ
Capacitors: 10 μF (2)
THEORY:
The main purpose of the common-collector (CC) or emitter follower (EF)
amplifier is to connect a source having a large resistance Rs to a load with a relatively low
resistance. It provides nearly unity voltage gain, high input and low output resistance.
AC VOLTAGE GAIN: The ac voltage gain of a CC amplifier can be calculated using
ro||RL
Av =
re+ ro||RL ( Eq 1)
AC INPUT IMPEDANCE: The ac input resistance is
Ri = R1 || R2 || ( β+1 ) [re + (ro || RL)] (Eq 2)
AC OUTPUT RESISTANCE: The ac output resistance is
Ro = re (Eq 3)
ignoring the source resistance.
64
PROCEDURE:
Part 1: DC Bias
a) Calculate dc bias values for the EF circuit of Figure-1 and record below.
Figure-1
(Calculated) VB = ____________
(Calculated) VE = ____________
(Calculated) VC = ____________
(Calculated) IE = ____________
b) Calculate re using re=VT/IE (Eq 4)

(Calculated) re = ____________
c) Connect the circuit of Figure-1. Set V cc = +10 V. Measure the dc bias of the circuit
measuring values of
(Measured) VB = ____________
(Measured) VE = ____________
(Measured) VC = ____________
65
d) Determine the dc emitter current using measured values of VE and RE

IE = VE/RE
IE = ____________
e) Determine the ac dynamic resistance, re using IE calculated from measured values
re = ____________
f) Compare the dc voltages, current IE and dynamic resistance re calculated in step-a,
with the values obtained in step-b.
Part 2: AC Voltage Gain

a) Calculate the ac voltage gain of the CE amplifier in Figure-1 using Equation-(i).
(Calculated) Av = ____________
b) Apply an ac input signal, Vsig = 1Vp and frequency =1k. Measure the resulting ac
output voltage, Vout.
(Measured) Vout = ____________
c) Determine the circuit ac voltage gain using the following equation:
Av = Vout/Vsig
(Measured)Av = ____________
d) Compare the voltage gain calculated in step-a, with that measured in step-b.
e) Using the oscilloscope observe and record input waveform, V sig and output voltage
waveform, Vout in Figure-2
Figure-2
Part 3: Input Resistance, Ri
a) Obtain the ac input resistance of the EF amplifier in Figure-1 using Equation- (ii).
(Calculated) Ri = ____________
66
b) To measure Ri connect input measurement resistor, Rx = 100 kΩ as shown in

Figure-3. Apply input voltage Vsig = 1Vp and measure Vin for an undistorted output.
Figure-3
(Measured) Vin = ____________

c) Determine Ri using
Ri
Vin= Vsig
Ri+ Rx
we get,
Vin
Ri= Rx
Vsig−Vin
(Measured) Ri = ____________
Remove resistor Rx.
d) Compare the ac input resistance calculated in step-a with that measured in step-b.
Part 4: Output Resistance, Ro
a) Determine the ac output resistance of the CC amplifier using Equation- (iii).
(Calculated) Ro = ____________
b) For an input of Vsig= 0.1 Vp at frequency, f =1 kHz measure the output voltage, Vout
when no load is connected.
(Measured, unloaded) Vout = ____________
c) Now connect load RL=120 Ω and measure VL
(Measured, loaded) VL = ____________
67
d) The output resistance can be determined from

RL
VL= Vout
Ro+ RL
for which
Vout −VL
Ro= RL
VL
Ro = ____________
e) Compare the CC output impedance calculated in step-(a) from that measured in

step-(b).
Design Experiment 12
68
Design of BJT Amplifier
Problem Statement
Design the bias network of a common emitter amplifier to establish a current
I E =1 mA using a power supply of V cc=12 V . The thermal voltage VT at room
temperature is 25 mV .Find the experimental value β of the given transistor if β is used in
calculations. . Input Voltage Signal which is to be amplified is 20 mV Peak to Peak at 1
KHz.
1. Draw the circuit of CE amplifier with Emitter Resistance and Bypass Capacitor.
SLO 4.1
2. Find all the unknown parameters in the drawn circuit. SLO 4.2
3. Implement the circuit on Bread board. SLO 4.3
o Check Breadboard connections
o DMM and Oscilloscope knowledge
4. Measure all dc voltages and currents which were calculated in (2). Compare the
measured with theoretical values and find % error. Show all your measurements in
the form of a table. SLO 4.4
5. Find the below parameters both from theoretical and measured values. Explain the
behavior of amplifier in terms of the results obtained. SLO 4.5
o r e , A v , R¿ , R o
6. Find the Maximum Input Voltage Swing which can be applied at base. How can
we improve the gain and input resistance of the amplifier? SLO 4.6
Experiment 13
MOSFET TRANSISTOR CHARACTERISTICS
_____________________________________________________________
69
OBJECTIVE:
The objective is to familiarize with the basic regions of operation of a MOSFET
transistor.
EQUIPMENT:
Instruments:
Dual DC Power Supply
DMM
Components:
CD4007
Resistors
THEORY:
The MOSFET device is a four terminal device with connections for the drain, gate,
source, and body as shown in the symbol in Fig 1. However, a more common symbol
used to identify the MOSFET is shown in Fig 2 and is what will be used in this
experiment. The MOSFET devices used in this lab have the body internally connected to
the source such that the body terminal is not externally accessible. Shown in these figures
are N-channel MOSFETs.
Figure-1 Figure-2
To study the MOSFET we connect two external voltage sources to the device as shown in
Figure 3. These provide a drain-source voltage VDS and a gate-source voltage VGS.
Figure-3
The voltage VDS may cause drain-source current IDS to flow provided a path exists from
the drain to the source inside the device. This internal current path can be controlled by
the gate-source voltage VGS. For a sufficiently high VGS, an internal current path, called the
channel, is established between the drain and the source. The higher the VGS value the
70
easier it is to flow for the drain-source current IDS. Note that the only DC current in the
MOSFET is IDS since the gate is internally insulated from the channel.
By operating the MOSFET in particular bias regions, based on the VGS, VDS, and IDS
values, it can be used to perform a variety of functions. The two regions that the
MOSFET device can operate in are the ohmic (linear or triode) and saturation(active)
regions. Both of these regions will be explored in this experiment through the exploration
of a few of the MOSFET device implementations. These regions can be graphically
represented. Shown in Figure 4 is the MOSFET IDS / VDS curve for constant values of VGS.
Notice that, the ohmic (triode) region exists where VDS is very small and the curve is
nearly linear, hence another name for the region, the linear region. As VDS increases, the
curve begins to flatten. When VDS is equal to the saturation voltage, VD(SAT), the device
enters the saturation region. This voltage, VD(SAT), is determined by the voltage VGS of the
MOSFET along with a physical parameter of the MOSFET called the threshold voltage
VT.
Figure-4
For a MOSFET, VD(SAT)=VGS–VT, and for VDS(SAT)≥VD≥0, the device is in the ohmic(linear
or triode) region of operation, and for VDS≥VD(SAT)≥0, the device is in the saturation region
of operation. The current flowing through the device in the ohmic(linear or triode) region
of operation is given by the following equation:
W 1
I DS =uo Cox
L [
( V GS−V t ) V DS − (V DS)2
2 ] ( Eq 1)
71
Given the VGS and VDS values as well as the physical MOSFET sizing W/L and the
physical parameter uoCox, the current IDS can be found for the ohmic(linear or triode)
region. The W/L parameter is the width of the device divided by its length and the
fabrication process of the device determines the physical parameter uoCox. In this region
of operation, the MOSFET acts as a voltage controlled resistor where the value of drain-
source resistance can be found by taking the partial derivative of IDS with respect to VDS as
shown below:
∂ I DS W 1
u C
[
∂V DS o ox L [
( V GS−V t ) V DS − 2 ( V DS )
2
]]
W 1
¿ uo C ox ( ( V GS −V t ) −V DS ) = (Eq 2)
L r ohmic
The device can also be operated in the saturation region. This region is primarily used for
amplification of an input signal. However, amplification will be studied in subsequent
experiments; in this experiment we are limiting the discussion to DC bias conditions in
the saturation region of operation. The current I DS in the saturation region of operation
can be found from the following equation (for simplicity, λ is assumed to be zero):
1 W
I DS = u o C ox ( V GS−V t ) 2 ( Eq 3)
2 L
In this region, the device acts as a voltage-controlled current source, hence its use as an
amplifier. The current source created is not ideal and is shunted by a small signal
equivalent resistance referred to as rds. The small signal resistance rds will be studied in
more detail later. For this experiment, the concern is with find the current IDS based on the
values of VGS and VDS.
Figure-5
In the saturation region, the MOSFET can be connected to act similar to a diode. The
MOSFET is commonly called diode-connected when configured as in Figure 5. The
voltage across the device can be set to provide a reference voltage that may be needed in
a particular application. The equation to find the voltage across the device can be found
72
by solving equation below for VGS since the VGS of the device is equal to VDS. This
equation for VMOSDIODE is shown below:
ID
V MOSDIODE =V t +
√ 1
2
u o C ox
W
( )
L
( Eq 4)
By diode-connecting the device, the saturation region is virtually guaranteed. Knowing

the IDS, W/L, and uoCox the voltage VMOSDIODE can be found.
In laboratory you will use the MOSFET Chip CD4007. The NMOS has
μoCox=166.67μA/V2, W/L=3 and VT = 1.2V. Assume VA =1/λ =100V.
The Pin Diagram of the CD4007 Chip is in Figure 6.
Figure-6
73
Pre Lab:
1. For the MOSFET shown in Figure 3, solve for the drain-source current IDS,
indicate the region of operation, and, if necessary, solve for the drain-source
resistance rohmic for the following conditions.
a) VGS = 3V ; VDS = 0.5V

b) VGS = 5V ; VDS = 0.5V
c) VGS = 2V ; VDS = 3V.
2. Desiring a MOSFET resistor with a resistance of 100kΩ, find the value of VGS
needed to create this resistor given VDS=0V.
3. For the MOSFET shown in Fig 7, solve for VDS=VMOSDIODE and the value of R.
(Hint: Write a KCL equation at the drain of the MOSFET and use Equations 3
and 4.)
Figure-7
Procedure:
Key Points:
1. You will be using CD4007 MOSFET array as in this experiment. This array
contains three NMOS and three PMOS transistors as shown in Fig.6.
2. The bulk (or substrates) of all NMOS transistors are connected to the V SS (pin 7)
and all PMOS substrates are connected to VDD (pin 14). When using this array pin
7 should be connected to the most negative supply voltage or to the source of the
transistor. Pin 14 is the substrate of the PMOS and must be connected to the most
positive supply voltage in the circuit.
3. CD4007 MOSFET array should not be connected to circuits with the power on
because high transient voltages may cause permanent damage. Therefore, do not
74
apply input signals until you have connected PIN 7 and 14; otherwise, serious
damage to the device could result.
4. It should be mentioned that the transistor characteristics of CD4007 could vary

considerably from chip to chip. The transistors may come from a different batch,
what can explain why the threshold voltage, the trans-conductance parameter and
the output resistance is different.
Precaution: MOSFET transistors are very susceptible to breakdown due to electrostatic

discharge. It is recommended that you always ground yourself before picking up the
MOSFET chip. Do not touch any of the pins of the chip.
Note: Use jumper wires as possible as short on your board to connect the pins of the
transistors.
Part a:
a) Verify the values of the resistors that you are going to use by measuring their
resistances with a multimeter. Make sure that all resistors are within 2% of their
marked values. This will assure that your current measurements are accurate
b) Prepare the power supply for VGS to ensure a DC voltage of +4V (before
connecting to the circuit. Prepare the other power supply for VDS to ensure a DC
voltage of 0V (before connecting to the circuit.
c) Observe the schematic shown in Fig.8. Notice that the numbers correspond to the
pin connections on the CD4007 chip.
d) Connect the circuit as shown in Fig 8. Measure and record the drain current IDS as
VDS is varied from 0V to +5V with VGS = 4V. Take data points in 0.2V increments
in order to have a sufficient number of values since these will be used to plot
IDS/VDS.
Figure-8
e) Repeat the above mentioned procedure in part (d) for VGS = 3V, and VGS = 2V.
75
Table-1
IDS
VDS VGS = 2V VGS = 3V VGS = 4V
0.4
0.8
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
4.2
4.4
4.6
4.8
5
f) With VDS = 5V, determine the value of VGS at which the current IDS becomes
negligible; assume for the purposes here that this means 5uA. This value of VGS is
close to the threshold voltage, V T, of the transistor for the MOSFET we are
working with.
Figure-9
76
Part b:
a) Connect the circuit as shown in Fig 9 with the ohmmeter across the drain and
source. Again, note the pin connections to the CD4007 chip. Vary VGS and notice
the change in resistance values. Measure and record the values of resistance for
VGS = 1.5V, 2V, 3V, 4V, and 5V.
Table-2
rohmic(meas
VGS ured)
1.5
V
2V
3V
4V
5V
b) Using Equation 2 for the drain-source resistance rohmic for a MOSFET in the
ohmic(linear or triode) region of operation, find the resistance of the MOSFET for
the following conditions given; kn = 166.67μA/V2, W/L=3, VT = 1.2V and VDS=0.
Compare these with the values obtained above. Complete a table of results
compiling the measured and calculated values.
Table-3
rohmic(calcu
VGS lated)
1.5
V
2V
3V
4V
5V
Part c:
a) Prepare a DC current supply to a value of 100u A to the circuit as shown in Fig
10. (Hint: Use the R value that you found on pre lab step 4 ). If necessary (if IDS ≠
100 uA) vary the DC current supply IDS(by varying the Potentiometer) to 100 uA.
77
Figure-10
b) Measure and record to voltage across the MOSFET and RPOT as shown Fig 10.
c) Now vary the DC current supply IDS (by varying the Potentiometer) to the
following values: 75 uA, and 50 uA. Measure and record the values of RPOT and
VDS for each condition.
Table-4
RPOT(measured VDS(measured
IDS ) )
100u
A
75uA
50uA
d) Using Equation 4 for the
voltage of a diode-connected MOSFET, calculate the voltages for the following
conditions given. Compare these values with those obtained above. Complete a
table of results compiling the measured and calculated values.
Table-5
RPOT(calculate VDS(calculate
IDS d) d)
100u
A
75uA
50uA
POST LAB:
a) Using the data collected in “Part a” plot a family of curves for the three values of
VGS overlaid on the same graph. There should be one curve for each of the three
values of VGS (2V, 3V and 4V). Label each curve with the appropriate VGS values
and label approximately where the ohmic(linear or triode) and saturation regions
exist.
78
b) Why would it be necessary to create a resistor from a MOSFET in “part c”?

Name some advantages of doing so.
c) Why would a MOSFET be connected like a diode in “part c”? Would the voltage
set by the MOSFET be helpful in circuit design?
79
Experiment 14
DC BIASING OF MOSFET
________________________________________________________________________
OBJECTIVE:
In this lab, we will be studying basic MOSFET circuits; we will design and analyze
some DC biasing circuits.
EQUIPMENT:
Instruments
DMM
Dual power supply
Component
Resistors: 100kΩ, 10kΩ (3), 100 kΩ potentiometer
CD4007 chip
THEORY:
The Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
The physical configuration of MOSFET is as follow:
Figure-1
The source and drain regions are a different semiconductor type than the bulk or body. In
the n MOSFET the source and drain regions are n-type, the bulk/body is p-type. In the p
MOSFET the source and drain regions are p-type, the bulk or body is n-type. Between
the source and the drain is the gate. But the gate is not directly connected to the silicon.
Between the gate and the silicon is a very thin silicon-dioxide insulator, which is at the
surface of the device.
The n MOSFET works as follows: First, assume the bulk is grounded so V B = 0. Then a
positive voltage is applied between the gate and the source, with the gate voltage larger
than the source voltage. This pulls electrons out of the source towards the surface of the
device. However, since at the surface, below the gate, there is an insulating oxide, the
electrons build up along the surface just below the gate and the oxide. This build-up of
electrons forms a conducting channel (which is actually called the ‘channel’) between the
80
source and drain. The electrons in the channel can then be pulled into the drain by a drain
voltage that is higher (more positive) than the source voltage.
There are two main operational modes: saturation, and linear/triode. Our basic
configuration and equation for saturation in the n MOSFET (V B = VS, VGS > Vt and VDS
>= VGS - Vt) is:
1 W
I D = K 'n ( V GS−V t )2 (1+ λ .V DS ) (Eq 1)
2 L
The parameter λ is typically very small and can often be neglected. In this lab, unless said
otherwise, assume the parameter λ is zero.
Our basic equation for the linear/triode region in the n MOSFET (VB = VS, VGS > Vt and
VDS <= VGS - Vt) is:
W 1
I D =K 'n [ ( V GS−V t ) V DS − (V DS)2 ] (Eq 2)
L 2
The DC gate current is zero (IG = 0), the DC source current is equal to the drain current:
IS = I D
Biasing:
The common-source amplifier with a NMOS transistor is shown in Figure 2. The biasing
is done by fixing the gate voltage with a voltage divider and also by using a source
resistor RS. The source resistor gives negative feedback and stabilizes the bias current as
a function of temperature variations and transistor characteristics. This is a popular
biasing scheme for discrete transistor circuits. Other biasing methods are possible, such
as using a drain-to-gate feedback resistor, or using a constant-current source. The latter
one is popular in integrated circuits. We will focus on the first method, illustrated in
Figure 2.
Figure-2
81
Biasing: Rule of Thumb while designing a circuit

For proper biasing we can use the following rule-of-thumb. We select the source resistor
value such that the voltage VS at the source terminal is about one third to one fifth of the
power supply VDD. The resistance RD is chosen such that the drain voltage V D is about in
the middle of VDD and VS. These two conditions give us the resistor values of RS and RD
for a specified drain current. The gate voltage can then be easily calculated as follows.
Since the transistor is operating in the saturation region (see previous lab), we know that
the current-voltage relationship is given by,
1 W
I D = K 'n ( V GS−V t )2 VDS > VGS - Vt (Eq 3)
2 L
To obtain certain bias current ID we need to apply gate-source voltage VGS equal to
2I D
V GS=V t +
√
K 'n
W
L
The corresponding gate voltage VG is then equal to
(Eq 4)
2ID
VG = VGS + VS ¿ V s +V t +
√ K 'n
W
L
(Eq 5)
Once the gate voltage VG is known, one can find the values of the resistor RG1 and RG2. We
choose the resistors such that the parallel resistor is relatively large to ensure a large input
resistance of the amplifier and prevent loading of the signal source Rin=RG1||RG2.
The factor (VGS-Vt) is called the saturation voltage and corresponds to the minimal drain-
source voltage required to keep the transistor in saturation. It is sometimes called the
overdrive voltage.
2 ID
V GS−V t=
√ ' W
Kn
L
=V DSat (Eq 6)
PRE-LAB:
Your task is to design the NMOS circuit given in Figure with a bias current I D = 0.6mA.
The source voltage VS should be 3V and the drain voltage VD should be chosen such that
it is in the middle of VS and VDD. The input resistance should be Rin larger than 15 kΩ.
The NMOS transistor (CD4007 array) has the following characteristics: V t = 1.2V K 'n
.W/L=0.7mA/V2
82
λ=0.004V-1 (note: since source-bulk terminal are shorted you won't need to use to
calculate the threshold voltage).
a) Find the value of VD.
b) Find the resistor values RS, and RD. Select values that are available in the lab.
c) Using the actual resistor value of RS find VS and VG.
d) Find the values of the resistors RG1, and RG2.
e) What is the total DC power dissipation in the amplifier? (Hint: power

dissipation is VDD x Itotal).
PROCEDURE:
You will be using the CD4007 MOSFET array that contains three NMOS and three
PMOS transistors as shown in figure 6 of previous experiment.
Note: The key point to remember when using this array is that the substrate of the NMOS
(bulk connection) is connected to pin 7 and should always be connected to the most
negative supply voltage. Pin 14 is the substrate of the PMOS and must be connected
to the most positive supply voltage in the circuit.
The goal of this experiment is to bias the transistor of Figure according to the hand
calculations made in pre-lab. After building the circuit you will verify the biasing
voltages and currents.
Part a:
Build the circuit of Figure 2 (RG1 = 100kΩ, RG2 = 100kΩ variable, RS = 5KΩ(two 10kΩ
in parallel combination) and RD = 10kΩ). Use the transistor between the pins 3, 4 and 5.
Notice that we have connected the bulk (pin 7) to the source (pin 5) of the NMOS
transistor. This can be done since we are only using a single NMOS transistor in the
array. For the biasing resistor RG2 use 100kΩ potentiometer.
Measure the DC voltage at the drain. It is important is position the drain voltage V D
around 9 or 10 V. Adjust the potentiometer R G2 so that VD is around 9V. After adjusting
the gate voltage, measure the gate and source voltages. Measure ID and record
VD = __________
VG = __________
VS = __________
VGS = __________
83
ID = __________
Part b:
Current Mirrors:
Figure-3
a) Connect the circuit as given in Figure 3

b) Use 1 kΩ resistors for RREF and RL.
c) The measure voltage across RREF and calculate the current, IREF
d) Also measure the “output” current IO.
e) Record readings in the following table for different values of RREF and RL.
Table 1
RREF 1 kΩ 500Ω
IREF IREF IREF IREF
RL IO IO
(calculated) (measured) (calculated) (measured)
1 kΩ
500Ω
0Ω
Post Lab:
Compare the results of table1 for following cases:
84
a) Values of IREF and IO for different values of RREF.

b) Values of IREF and IO for different values of RL.
85
Design Experiment 15
Design of MOSFET Amplifier
Problem Statement
As an Electronics Engineer, You have to design an amplifier whose gain is less
dependent on transistor parameters and changes linearly. Design a biasing circuits for
Common Source Amplifier having source degenerative resistance with Bypass Capacitor
at Source with I D =0.57 mA and Vs=2.80V for a Load Resistance R Lof 100 kΩ. AC
input signal which is to be amplified is of 0.4V amplitude (0.4 Vpp) and 5kHz frequency
The internal resistance of Source R sig is 5 kΩ .The NMOS has these parameters
k 'n=166.67 μA/V 2 ,W / L=3 and V t =1V . Use Vcc=15 Vfor calculations.
 Draw the circuit SLO 4.1
 Find the unknowns in the Drawn Circuit SLO 4.2
 Implement the circuit on Bread board. SLO 4.3
o Check Breadboard connections
o DMM and Oscilloscope knowledge
 Measure all dc voltages and currents which were calculated in (2). Compare the
measured with theoretical values and find % error. Show all your measurements
in the form of a table. SLO 4.4
 Find the below parameters both from theoretical and measured values. Explain the
behavior of amplifier in terms of the results obtained. SLO 4.5
o A v , R ¿ , Ro
 Limitations SLO 4.6

o Maximum Input Voltage Swing which can be applied at Gate.
o Minimum Value of Vg to remain in Saturation Region.
86
Appendix A: Lab Evaluation Criteria

Labs with projects
1. Experiments and their report 50%
a. Experiment 60%
b. Lab report 40%
2. Quizzes (3-4) 15%
3. Final evaluation 35%
a. Project Implementation 60%
b. Project report and quiz 40%
Labs without projects

1. Experiments and their report 50%
a. Experiment 60%
b. Lab report 40%
2. Quizzes (3-4) 20%
3. Final Evaluation 30%
i. Experiment 60%
ii. Lab report, pre and post
experiment quiz 40%
Notice:
Copying and plagiarism of lab reports is a serious academic misconduct. First instance of
copying may entail ZERO in that experiment. Second instance of copying may be
reported to DC. This may result in awarding FAIL in the lab course.
87
Appendix B: Safety around Electricity

In all the Electrical Engineering (EE) labs, with an aim to prevent any unforeseen
accidents during conduct of lab experiments, following preventive measures and safe
practices shall be adopted:
 Remember that the voltage of the electricity and the available electrical current in
EE labs has enough power to cause death/injury by electrocution. It is around
50V/10 mA that the “cannot let go” level is reached. “The key to survival is to
decrease our exposure to energized circuits.”
 If a person touches an energized bare wire or faulty equipment while grounded,
electricity will instantly pass through the body to the ground, causing a harmful,
potentially fatal, shock.
 Each circuit must be protected by a fuse or circuit breaker that will blow or “trip”
when its safe carrying capacity is surpassed. If a fuse blows or circuit breaker
trips repeatedly while in normal use (not overloaded), check for shorts and other
faults in the line or devices. Do not resume use until the trouble is fixed.
 It is hazardous to overload electrical circuits by using extension cords and multi-
plug outlets. Use extension cords only when necessary and make sure they are
heavy enough for the job. Avoid creating an “octopus” by inserting several plugs
into a multi-plug outlet connected to a single wall outlet. Extension cords should
ONLY be used on a temporary basis in situations where fixed wiring is not
feasible.
 Dimmed lights, reduced output from heaters and poor monitor pictures are all
symptoms of an overloaded circuit. Keep the total load at any one time safely
below maximum capacity.
 If wires are exposed, they may cause a shock to a person who comes into contact
with them. Cords should not be hung on nails, run over or wrapped around
objects, knotted or twisted. This may break the wire or insulation. Short circuits
are usually caused by bare wires touching due to breakdown of insulation.
Electrical tape or any other kind of tape is not adequate for insulation!
 Electrical cords should be examined visually before use for external defects such
as: Fraying (worn out) and exposed wiring, loose parts, deformed or missing
parts, damage to outer jacket or insulation, evidence of internal damage such as
pinched or crushed outer jacket. If any defects are found the electric cords should
be removed from service immediately.
 Pull the plug not the cord. Pulling the cord could break a wire, causing a short
circuit.
 Plug your heavy current consuming or any other large appliances into an outlet
that is not shared with other appliances. Do not tamper with fuses as this is a
potential fire hazard. Do not overload circuits as this may cause the wires to heat
and ignite insulation or other combustibles.
 Keep lab equipment properly cleaned and maintained.
 Ensure lamps are free from contact with flammable material. Always use lights
bulbs with the recommended wattage for your lamp and equipment.
88
 Be aware of the odor of burning plastic or wire.

 ALWAYS follow the manufacturer recommendations when using or installing
new lab equipment. Wiring installations should always be made by a licensed
electrician or other qualified person. All electrical lab equipment should have the
label of a testing laboratory.
 Be aware of missing ground prong and outlet cover, pinched wires, damaged
casings on electrical outlets.
 Inform Lab engineer / Lab assistant of any failure of safety preventive measures
and safe practices as soon you notice it. Be alert and proceed with caution at all
times in the laboratory.
 Conduct yourself in a responsible manner at all times in the EE Labs.
 Follow all written and verbal instructions carefully. If you do not understand a
direction or part of a procedure, ASK YOUR LAB ENGINEER / LAB
ASSISTANT BEFORE PROCEEDING WITH THE ACTIVITY.
 Never work alone in the laboratory. No student may work in EE Labs without the
presence of the Lab engineer / Lab assistant.
 Perform only those experiments authorized by your teacher. Carefully follow all
instructions, both written and oral. Unauthorized experiments are not allowed.
 Be prepared for your work in the EE Labs. Read all procedures thoroughly before
entering the laboratory. Never fool around in the laboratory. Horseplay, practical
jokes, and pranks are dangerous and prohibited.
 Always work in a well-ventilated area.
 Observe good housekeeping practices. Work areas should be kept clean and tidy
at all times.
 Experiments must be personally monitored at all times. Do not wander around
the room, distract other students, startle other students or interfere with the
laboratory experiments of others.
 Dress properly during a laboratory activity. Long hair, dangling jewelry, and
loose or baggy clothing are a hazard in the laboratory. Long hair must be tied
back, and dangling jewelry and baggy clothing must be secured. Shoes must
completely cover the foot.
 Know the locations and operating procedures of all safety equipment including
fire extinguisher. Know what to do if there is a fire during a lab period; “Turn off
equipment, if possible and exit EE lab immediately.”
89
Appendix C: Guidelines on Preparing Lab Reports

Each student will maintain a lab notebook for each lab course. He will write a report for
each experiment he performs in his notebook according to the following format.
LAB REPORT FORMAT
Your report must include following:
1. Introduction: Introduce area explored in the experiment.

2. Objective: What are the learning goals of the experiment?
3. Measurements: In your own words write how the experiment is performed (Do
not copy/paste the procedure).
a. Issues: Which technical issues were faced during the performance of the
experiment and how they were resolved?
b. Graphs, if any
4. Conclusions: What conclusions can be drawn from the measurements?
5. Applications: Suggest a real world application where this experiment may apply.
6. Answers to post lab questions (if any).
Sample Lab Report
Introduction
An RC circuit is a first order circuit that utilizes a capacitor as an energy storage element
whereas a resistor as an energy wastage element. RC circuits are building blocks of
electronic devices and their thorough understanding is important in comprehending
advance engineering systems such as transistors and transmission lines.
An RC circuit can be operated with both DC and AC sources. In this lab we study
transient response of RC circuits with a square wave as a DC source. During the DC
operation of an RC circuit the voltage across the capacitor or the resistor show energy
storing (capacitor charging) and dissipating (capacitor discharging via resistor)
mechanisms of the circuit. The capacitor charging or discharging curves then lead to
determine time constant of the circuit where the time constant signifies time required by
the RC circuit to store or waste energy.
Objective:
To study transient response of a series RC circuit
90
Measurements:
The circuit used for the experiment is shown in Fig. 1. Both input (a square wave) and
output (voltage across capacitor) waveforms are monitored on an oscilloscope. The
capacitor charging is observed during "on" part of the square waveform whereas the
capacitor discharging is observed during "off" part of the square waveform (Draw
graphs). We measure the time constant from the capacitor charging or discharging curve.
While keeping the capacitor value constant, we also measure time constants with various
resistor values (Table 1).
Fig.1. The circuit used in the experiment
TABLE I. Time constant as a function of the resistor values
Resistance
270 Ω 330 Ω 470 Ω 1 kΩ 2.2 kΩ 3.3 kΩ
(Nominal)
Resistance
(Measured)
Time constant
(Calculated)
Time constant
(Measured)
Capacitance
(Measured)
Issues:
Mention any issue(s) you encountered during the experiment and how they were resolved
Conclusions:
From the measurements following conclusions can be drawn:
a) The capacitor charging and discharging curves are exponential.

b) The time constant is directly proportional to the resistor value.
91
Both of the above conclusions are also easily verifiable by solving differential equation
for the RC circuit.
Applications:
An RC circuit can be employed for a camera flash. The capacitor discharges through the
flash light during a picture taking event.
Required Graphs:
Use separate graph paper for plotting all required graph.
92

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Electronic Devices and Circuits

Department of Electrical Engineering

Created by: Ms. Farrah Fayyaz, Mr. Aurangzeb

Date: August, 2005

Last Updated by: M. Umar Bashir

Date: August, 2018

Approved by the HOD: Dr. S.M Sajid

Date: August, 2018

2 Half wave Rectification 10

3 Full Wave Rectification 17

6 Regulated DC Power Supplies using Zener Diode 38

7 Design of DC Power Supply 44

9 Voltage divider and collector feedback bias 49

10 Common emitter amplifier 58

11 Emitter follower amplifier 63

12 Design of BJT Amplifier 68

13 MOSFET transistor characteristics 69

15 Design of MOSFET Amplifier 83

16 Appendix A: Lab Evaluation Criteria 84

17 Appendix B: Safety around electricity 85

18 Appendix C: Guidelines on preparing lab reports 87

1 Oscilloscope 40 MHZ (CS-4135A)

2 Digital Multimeter (Escort 3136A)

3 Function Generator 10 MHZ (EGC-3236A)

4 Digital Power Supply (Matrix MPS-3005 L-3)

I-V CHARACTERISTICS OF A DIODE

The cut-in-voltage is determined by extending a straight line tangent to the curve

RDC = VD/ID ohms (Eq 2)

It can be shown through differential calculus that the AC resistance of a diode in

rD= VT /ID ohms (Eq 4)

Part 2: Forward-bias diode characteristics

a) Construct the network of Figure-2.

d) Repeat step-c for the remaining values of VR.

Part 3: Reverse bias

(Calculated) RDC = ________________

d) Is the resistance level sufficiently high to be considered open circuit equivalent if

b) Determine the AC resistance at ID = 9 mA using the equation rD = VT/ID for the

Part 2: Half-wave Rectification

a) Construct a circuit of Figure-3. Record the measured value of the resistance.

b) Set the input to 1000 Hz, 8 Vp-p sinusoidal volts.

Figure-2 Half-wave rectifier

c) Trace the input on Figure-3 as seen on the oscilloscope.

Vout in X-Y mode

Vout in voltage-time mode(Observed) Vout in X-Y mode

Vout in voltage-time mode(Observed) Vout in X-Y mode

Vout in voltage-time mode(Expected) Vout in X-Y mode

Vout in voltage-time mode(Observed) Vout in X-Y mode

Vout in voltage-time mode(Observed) Vout in X-Y mode

Part 4: Half-wave Rectification

Vout in voltage-time mode(Observed) Vout in X-Y mode

Vout in X-Y mode

f) Also measure VDC at output using multi meter.

Vout in X-Y mode

Part 2 Full-wave rectification (Bridge configuration)

a) Construct the full-wave bridge rectifier of Figure-2.

Vout in voltage-time mode(Expected) Vout in X-Y mode

Vout in voltage-time mode(Observed) Vout in X-Y mode

Vout in voltage-time mode(Expected) Vout in X-Y mode

Vout in voltage-time mode(Observed) Vout in X-Y mode

Part 3: Full-wave center-tapped configuration