Manual Wafer Profiler CVP21 System: Standard Operating Procedure

4D LABS, Simon Fraser University 8888 University Drive, Burnaby, B.C.
V5A 1S6
E nanofabrication@4dlabs.ca T 778.782.8084 F 778.782.3765 W www.4dlabs.ca
Manual Wafer Profiler CVP21 System
Standard Operating Procedure
Revision: 1.0 — Last Updated: Mar.24/2016, Revised by Tom Cherng
Overview
This document describes how to operate the WEP- Wafer Profiler CVP21 in the 4D Labs
Nanofabrication Facility. It is intended to be a reference for trained users of the system and is not a substi-
tute for training by Nanofabrication Facility staff.
Revision History
# Revised by: Date Modification

1 Tom Cherng 2016/03/31 Initial Release
2
3
4
5
Document No. 4DSOP000X

4D LABS, Simon Fraser University 8888 University Drive, Burnaby, B.C. V5A 1S6
Table of Contents
Overview.................................................................................................................................................. 1
Revision History........................................................................................................................................ 1
Table of Contents ..................................................................................................................................... 2
General Information ................................................................................................................................. 3
1. The Electrochemical cell ................................................................................................................... 3
2. Carrier concentration measurement .................................................................................................. 4
3. Etching condition ............................................................................................................................. 5
4. Measurement procedure................................................................................................................... 6
Operation ................................................................................................................................................ 7
1. Start Program .................................................................................................................................. 7
2. Prepare for process start................................................................................................................... 7
3. Start parameters ............................................................................................................................ 10
4. Process Start .................................................................................................................................. 11
How the process starts and description of the process confirmation windows ............. 11
5. Start measurements ....................................................................................................................... 11
6. Etch/Profiling Process ..................................................................................................................... 14
7. End of Etching/Profile ..................................................................................................................... 15
References and Files ............................................................................................................................... 16
Contact Information ............................................................................................................................... 16
2
General Information
1) Do not modify the Mechanical system or unscrew any parts.
2) Fellow the chemical security data sheets.
3) Check the used fluids for compatibility with the equipment materials!
4) The ventilation need flush air!
5) The housing might heat up!
6) The cell stage mechanics is very sensitivity!
7) The wafer hood is attached to a precision mechanics!
8) The measurement electronics is very sensitivity!
1. The Electrochemical cell

The electrochemical cell is schematically shown on figure 1.
The sample is pressed against a sealing ring in the electrochemical cell containing an electrolyte. The ring
opening defines the contact area. The depletion region is created by applying a potential between the sem-
iconductor and the platinum electrode measured with respect to the reference saturated calomel electrode.
The etching conditions are controlled by the current circuit between the semiconductor and the counter
electrode.
Fig. 1 Electrochemical cell
3
2. Carrier concentration measurement

Depending of the charge of the ions in solution adjacent to the interface, carriers may be attracted (accu-
mulation) or repelled (depletion) in the field-affected region. To measure carrier concentration by CV meth-
ods, conditions must be such that a region depleted of carriers is formed. For a p-type semiconductor,
where the majority carriers are holes, this condition is satisfied by positive ions in solution, as shown in
Figure 2. By making the semiconductor more negative than its equilibrium value, positive ions are attracted
to the interface and holes are repelled. For a n-type semiconductor, where the majority carriers are elec-
trons, negative ions are required and thus the semiconductor must be made more positive than its equilib-
rium value (also shown on Figure 2).
Fig. 2 P-type and N type semiconductor carrier concentration
The well-known equations for depletion width Wd and capacitance C for a metal/semiconductor apply also
to this system:
2(∅ − 𝑉)𝜀0 𝜖𝑟 1/2

𝑊𝑑 = ( )
𝑞𝑁
𝑞𝑁𝜀0 𝜀𝑟
𝐶 = 𝐴( )
2(∅ − 𝑉)
C = Capacitance
ɸ = ‘Built in’ or contatct potential
V = Applied voltage
A = Effective contact or etch area
ε0 = Permittivity of free space
4
εr = Relative permittivity of the semiconductor

N = Carrier concentration
Wd = Depletion width
q = Charge of the electron
Hence, there is a linear relationship between 1/C2 and V which allows to determine N:
1 2(∅ − 𝑉)
2
=
𝐶 𝑞𝑁𝜀0 𝜀𝑟 𝐴2
The charge density at the edge of the depletion layer is therefore given by
1 𝐶3
𝑁= ×
𝑞𝜀0 𝜀𝑟 𝑑𝐶/𝑑𝑉
Thus N is determined by the measurement of A, C and dC/dV. Parameters C and dC/dv are obtained by
using a slowly modulated high frequency voltage. A must be measured precisely.
3. Etching condition
The advantages of using an electrolyte are apparent when the dissolution process is considered. Depth pro-
filing is achieved by dissolving the semiconductor electrolytically, The dissolution process results in an in-
creasing separation of electric charge which depends on the presence of holes. For p-type semiconductors,
holes are the majority carriers and dissolution is readily achieved by forward biasing the electrolyte-
semiconductor junction. For n-type material, holes are generated by illuminating and reverse biasing the
junction. The light with a short enough wavelength promotes electrons from the valence to the conduction
band, leaving holes behind that are attracted to the surface by reverse biasing the junction (see figure 3).
For this to happen the wavelength λ must obey the condition: 𝜆 ≤ ℎ𝑐 /𝐸𝑔
Fig. 3 P-type and N-type semiconductor Etching Mechanism
5
The etching depth Wr depends on the dissolution current Idis according to the relationship from the frarady’s
law of electrolysis:
𝑀
𝑊𝑟 = ∫ 𝐼 𝑑𝑡
𝑧𝐹𝜌𝐴 𝑑𝑖𝑠
With
Z = Dissolution valancy ( number of charge carrier required to dissolve one semiconductor atom)
F = Faraday constant
= Semiconductor density
M= semiconductor molecular weight
A = Contact area
The measurement depth of the carrier density is W = Wd+Wr
4. Measurement procedure
To perform a measure one must :

1. Obtain an I-V plot, from which it is possible to derive the bias voltage range for capacitance measure-
ment and to create etching conditions.
2. Perform a C-V curve to obtain the measurement potential.
3. using information obtained above, perform the depth profile.
Performance limitations:
Carrier concentration 1013cm-3 to 1020cm-3
Depth range: 0.05m to 50 m
Depth resolution 1nm
Carrier frequency: 0.3 kHz to 25 kHz
Modulation frequency 0.01 kHz to 2.55 kHz.
6
Operation
1. Start Program
Fig 4. Program start screen
2. Prepare for process start

1) Before Start, the screen must look like Fig 4. The Green central button shows “ Load Data”.
2) Place the wafer on the wafer table. The vacuum is checked by a sensor. If vacuum is OK, this is shown
on the Equipment overview as a white background color field in wafer table.
7
Fig.5 Load wafer

3) Apply In-Ga-Eutectic at positions of Front contacts. Scratch in the In_Ga-Eutectic with a sharp steel
knife.
Fig. 6 Apply In-Ga alloy for ohmic contact
4) Check the cell around the sealing ring: It must be clean to achive precise control of measurement area.
If not: Risen with water and blow ring dry with Nitrogen pistol.
5) Insert the Reference electrode into the cell.
8
Fig. 7 Insert reference electrode

6) Check that all fluid tubes are connected correctly.
- to the cell
- to the cell inlet valve and
- to the drain outlet valve
7) Place wafer table vertical. Screw wafer table to fix the vertical position.
Tighten the screw
Fig. 8 Put the wafer table vertical.
9
3. Start parameters
How to enter the parameters which are necessary to start a measurement.

1. Press the green checkbox “load data “ The window startup Data appear,
Fig. 9 Load data window
2. Enter sample origin and name; select sample geometry and type; contact type(usually “front con-
tact”); contact ring( usually “large ring”); Layer type always select”-“.
3. Step width: typically 0.05μm for Silicon; Etch Depth: typically 0.5μm or 1μm for surface layer analy-
sis.
4. End Procedure: Select "Standard”. Comment: Enter any text you want User: Enter your short
name.
5. Storage path: Only if you want. Then press OK.
10
4. Process Start
How the process starts and description of the process confirmation windows
1. Confirmation window will appear: Press "Ring and sample cleaned".(Be careful that no dust is on
sample. If you are not sure, better blow again with Nitrogen Pistol
2. Confirmation window will appear: Press "SCE is ok"
3. Confirmation window will appear: Check cleaning bottle: If cleaning is missing, refill.Check electro-
lyte bottle: If enough electrolyte, press "Enough electrolyte and cleaning" else refill electrolyte
and press " Electrolyte refreshed" (Then question "Reset timer?" will appear, confirm Yes)
4. Confirmation window will appear: Check drain can. If too full, exchange by empty drain can, and pre-
pare full drain can to be emptied. Press "Drain can ok"
5. Information window will appear: Press "Yes"
6. Information window will appear: Press "Start Auto"
7. Now the window Automation appears. This window keeps visible all the time, until the complete
wafer is measured.
8. Check "Quick cleaning", if after this wafer you want to measure the next wafer. Then no water is
used. If "Quick cleaning" is unchecked, after the last measurement of this wafer the cleaning will use
water (depending on the End Procedure settings ). If you want to interrupt wafer measurement, press
"Automation End" (and, if already etching, "Pause" in the etch window)
5. Start measurements
Contact burning, Contact measurement, electrolyte loading and AC frequency

Analysis
The following procedure will run automatically. Do not disturb, do not press buttons! (If you want to
interrupt automation, press "Automation End" in the automation window
(If you are not using automation, but if you proceed manually, then always follow the green buttons)
1) The electronics is tested. First System test is done. The sample is not connected during this test.
11
2) Next: Contact measurement. During measurement I, V and R is shown in a small wait window. DC
current is applied through one front contact in and through the other out, and the voltage is measured.
The IV graph should be linear with center 0, 0.
Fig. 10 Check contact

3) If this Contact-IV graph is very nonlinear (as in the graph shown here), better press "End automation",
check the contacts, perhaps scratch again a bit with a knife. Then press "Actions" –"Start automa-
tion" to continue the automated process.
4) Video window opens and Cells drive to the wafer.
5) Cell load with electrolyte.
6) After end of cell load, the camera image should be sharp and no bubbles should be visible.
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Fig. 11 Load cell

7) Rest potential measurement. The rest potential is the voltage between SCE and semiconductor, if no
current is flowing.
8) C-V Analysis. The AC impedance of the semiconductor/electrolyte interface is measured at 3 frequency

and amplitude.
Fig. 12 C-V analysis
9) C-V measurement. Durnig the measurement, the values are shown in a wait window. In the graphs the
top graph is CV, the bottom is IV graph.
Fig.13 C-V measurement
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6. Etch/Profiling Process
How to control the Profiling process, consisting of alternating

etch/measurement steps
1) After the start measurements, etching is started.
Fig. 14 Start Etching

2) The etching is controlled by etch voltage and etch lamp power (UV light “on” only for n type etching).
Only the step width and the end depth may be adapted. The approximate time until end of step / end
of measurement is shown.
Fig. 15 Etching and C-V
14
3) “Auto end” should be checked – it means that data storage and cell unload is done automatically at
the end of the process.
4) After end of each etch step, automatically a video image is stored, and the new N value from the slope
of the 1/C2 graph.
5) Before, a relax time is needed, to allow the electrolyte/semiconductor interface to change gently from
etch voltage to measurement voltage. You may check the video about the contact and de-bubbler at
this period.
7. End of Etching/Profile
How the Profiling process is terminated

1) After the end depth is reached, the process will be finished automatically ( If “Auto End” is checked).
2) The standard end procedure is: Store data to pr_last; store image to Pr_last; store data to Pr_Data;
unload (Quick cleaning, no water); Drive cell back and Reset measurement windows.
3) During the unload cycle a process window is displayed. Also, during driving back cell, a motor process
window is displayed. Then the wafer table will drive to the next position. The new index is shown in
the title line.
4) The complete procedure starting from Start Measurement restart for the measurement at the next posi-
tion.
5) If all position are measured, then a green window “Finished” appears. The LED Becon then is yellow.
The LED “Process End” at the front of the equipment is on.
6) Please put the wafer table to horizontal position, and unload the wafer.
7) Now the window “Next measurement follows” appears. If you have no further measurement, press
“Regular end”, then you will be asked to return the SCE to the SCE container. After this, please put
the wafer table back to vertical position, close the equipment, shut down windows and switch off
equipment.
15
References and Files

Wafer Profiler CVP21 User Manual.
Contact Information
Questions or comments in regard to this document should be directed towards Tom Cherng
(cherng@4dlabs.ca) in 4D LABS at Simon Fraser University, Burnaby, BC, Canada.
16

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4D LABS, Simon Fraser University 8888 University Drive, Burnaby, B.C.

Manual Wafer Profiler CVP21 System

Standard Operating Procedure

Revision: 1.0 — Last Updated: Mar.24/2016, Revised by Tom Cherng

# Revised by: Date Modification

Document No. 4DSOP000X

2) Fellow the chemical security data sheets.

4) The ventilation need flush air!

5) The housing might heat up!

6) The cell stage mechanics is very sensitivity!

7) The wafer hood is attached to a precision mechanics!

8) The measurement electronics is very sensitivity!

1. The Electrochemical cell

Fig. 1 Electrochemical cell

2. Carrier concentration measurement

Fig. 2 P-type and N type semiconductor carrier concentration

2(∅ − 𝑉)𝜀0 𝜖𝑟 1/2

εr = Relative permittivity of the semiconductor

Fig. 3 P-type and N-type semiconductor Etching Mechanism

The measurement depth of the carrier density is W = Wd+Wr

To perform a measure one must :

Fig 4. Program start screen

2. Prepare for process start

Fig.5 Load wafer

Fig. 6 Apply In-Ga alloy for ohmic contact

Fig. 7 Insert reference electrode

Tighten the screw

Fig. 8 Put the wafer table vertical.

How to enter the parameters which are necessary to start a measurement.

Fig. 9 Load data window

2. Confirmation window will appear: Press "SCE is ok"

5. Information window will appear: Press "Yes"

6. Information window will appear: Press "Start Auto"

Contact burning, Contact measurement, electrolyte loading and AC frequency

Fig. 10 Check contact

4) Video window opens and Cells drive to the wafer.

5) Cell load with electrolyte.

Fig. 11 Load cell

8) C-V Analysis. The AC impedance of the semiconductor/electrolyte interface is measured at 3 frequency

Fig. 12 C-V analysis

Fig.13 C-V measurement

How to control the Profiling process, consisting of alternating

Fig. 14 Start Etching

Fig. 15 Etching and C-V

How the Profiling process is terminated

References and Files

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