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    Silicon Epitaxial Planar Transistor 2SA1235A: Galaxy Electrical

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    GABRIEL ALFONSO
    This document provides specifications for the 2SA1235A silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of excellent saturation voltage and linear DC gain - Applications for low frequency voltage amplification - Maximum ratings and package information for the SOT-23 package - Electrical characteristics including gain, voltage, and capacitance - Packaging outline and soldering footprint dimensions

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Silicon Epitaxial Planar Transistor 2SA1235A: Galaxy Electrical

    Uploaded by

    GABRIEL ALFONSO
    39 views4 pages
    This document provides specifications for the 2SA1235A silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of excellent saturation voltage and linear DC gain - Applications for low frequency voltage amplification - Maximum ratings and package information for the SOT-23 package - Electrical characteristics including gain, voltage, and capacitance - Packaging outline and soldering footprint dimensions

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    2sa1235a_galaxy

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    This document provides specifications for the 2SA1235A silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of excellent saturation voltage and linear DC gain - Applications for low frequency voltage amplification - Maximum ratings and package information for the SOT-23 package - Electrical characteristics including gain, voltage, and capacitance - Packaging outline and soldering footprint dimensions

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    39 views4 pages

    Silicon Epitaxial Planar Transistor 2SA1235A: Galaxy Electrical

    Uploaded by

    GABRIEL ALFONSO
    This document provides specifications for the 2SA1235A silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of excellent saturation voltage and linear DC gain - Applications for low frequency voltage amplification - Maximum ratings and package information for the SOT-23 package - Electrical characteristics including gain, voltage, and capacitance - Packaging outline and soldering footprint dimensions

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    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1235A

    FEATURES
    Pb
    z Small collector to emitter saturation voltage
    Lead-free
    VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA).
    z Excellent lineary DC forward current gain.
    z Super mini package for easy mounting.

    APPLICATIONS
    z PNP epitaxial type transistor designed for low frequency. SOT-23
    z Voltage amplify application.

    ORDERING INFORMATION
    Type No. Marking Package Code

    2SA1235A ME/MF/MG SOT-23

    MAXIMUM RATING @ Ta=25℃ unless otherwise specified


    Symbol Parameter Value Units

    VCBO Collector-Base Voltage -50 V

    VCEO Collector-Emitter Voltage -50 V

    VEBO Emitter-Base Voltage -6 V

    IC Collector Current -Continuous -200 mA

    PC Collector Dissipation 150 mW

    Tj,Tstg Junction and Storage Temperature -55~125 ℃

    Document number: BL/SSSTC094 www.galaxycn.com


    Rev.A 1
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1235A

    ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V

    Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -50 V

    Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V

    Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA

    Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA

    VCE=-6V,IC=-1mA 150 800


    DC current gain hFE
    VCE=-6V,IC=-0.1mA 90

    Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V

    Transition frequency fT VCE=-6V, IC=-10mA 200 MHz


    Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF
    VCE=-6V,IE=0.3mA,
    Noise figure NF 20 dB
    f=100MHz,RG=10kΩ

    CLASSIFICATION OF hFE(1)
    Rank E F G

    Range 150-300 250-500 400-800

    Marking ME MF MG

    Document number: BL/SSSTC094 www.galaxycn.com


    Rev.A 2
    BL Galaxy Electrical Production specification

    Silicon Epitaxial Planar Transistor 2SA1235A

    PACKAGE OUTLINE
    Plastic surface mounted package SOT-23

    SOT-23
    Dim Min Max
    A 2.85 2.95
    B 1.25 1.35
    C 1.0Typical
    D 0.37 0.43
    E 0.35 0.48
    G 1.85 1.95
    H 0.02 0.1
    J 0.1Typical
    K 2.35 2.45
    All Dimensions in mm

    SOLDERING FOOTPRINT

    Unit : mm

    PACKAGE INFORMATION
    Device Package Shipping

    2SA1235A SOT-23 3000/Tape&Reel

    Document number: BL/SSSTC094 www.galaxycn.com


    Rev.A 3
    www.s-manuals.com

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