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    Iit Jammu-Class Test Course Code - EFD009U2M Time: 1 Hrs. Max. Marks 20 This Question Paper Contains One Page

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    Diksha
    This 1-hour test paper contains 7 questions about semiconductor physics and p-n junction diodes. It assesses the students' understanding of: 1) The variation of Fermi level and minimum conductivity with doping concentration and temperature in n-type semiconductors. 2) Calculating carrier concentrations in a new semiconductor given its material properties. 3) The origin of contact potential in abrupt p-n junctions and how the junction potential depends on majority and minority carriers. 4) Estimating hole current in terms of minority carrier concentration for an abrupt homojunction diode. 5) Drawing band diagrams and determining fields and carrier concentrations from given doping concentrations for an abrupt

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    Iit Jammu-Class Test Course Code - EFD009U2M Time: 1 Hrs. Max. Marks 20 This Question Paper Contains One Page

    Uploaded by

    Diksha
    37 views1 page
    This 1-hour test paper contains 7 questions about semiconductor physics and p-n junction diodes. It assesses the students' understanding of: 1) The variation of Fermi level and minimum conductivity with doping concentration and temperature in n-type semiconductors. 2) Calculating carrier concentrations in a new semiconductor given its material properties. 3) The origin of contact potential in abrupt p-n junctions and how the junction potential depends on majority and minority carriers. 4) Estimating hole current in terms of minority carrier concentration for an abrupt homojunction diode. 5) Drawing band diagrams and determining fields and carrier concentrations from given doping concentrations for an abrupt

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    This 1-hour test paper contains 7 questions about semiconductor physics and p-n junction diodes. It assesses the students' understanding of: 1) The variation of Fermi level and minimum conductivity with doping concentration and temperature in n-type semiconductors. 2) Calculating carrier concentrations in a new semiconductor given its material properties. 3) The origin of contact potential in abrupt p-n junctions and how the junction potential depends on majority and minority carriers. 4) Estimating hole current in terms of minority carrier concentration for an abrupt homojunction diode. 5) Drawing band diagrams and determining fields and carrier concentrations from given doping concentrations for an abrupt

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    37 views1 page

    Iit Jammu-Class Test Course Code - EFD009U2M Time: 1 Hrs. Max. Marks 20 This Question Paper Contains One Page

    Uploaded by

    Diksha
    This 1-hour test paper contains 7 questions about semiconductor physics and p-n junction diodes. It assesses the students' understanding of: 1) The variation of Fermi level and minimum conductivity with doping concentration and temperature in n-type semiconductors. 2) Calculating carrier concentrations in a new semiconductor given its material properties. 3) The origin of contact potential in abrupt p-n junctions and how the junction potential depends on majority and minority carriers. 4) Estimating hole current in terms of minority carrier concentration for an abrupt homojunction diode. 5) Drawing band diagrams and determining fields and carrier concentrations from given doping concentrations for an abrupt

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    IIT JAMMU- CLASS TEST

    Course code - EFD009U2M

    Time: 1 hrs. Max. Marks 20


    Note: All questions are compulsory and marks are mentioned against each question
    This question paper contains one page

    Figures at the right hand margin indicate marks


    All parts of a question should be answered at one place
    Q. No Marks
    Draw the variation of the Femi level of a n-type semiconductor with doping concertation 2
    1 and with temperature. Plot for all possible temperatures.
    Show that the minimum conductivity of a semiconductor occurs when 𝑛# = 2
    2 𝑛% &(𝜇) /𝜇+ ), where 𝑛# is the electron concentration in the conduction band, 𝜇) , 𝜇+ are
    the hole and electron mobility respectively, 𝑛% is the intrinsic carrier concentration.
    3 A new semiconductor has Nc = 1019cm, Nv = 5 ´ 1018 cm-3 and Eg = 2 eV. If it is doped 3
    with 1017 atoms/cm3 donors (fully ionized), calculate the electron, hole and intrinsic
    carrier concentration at room temperature.
    Discuss the origin of contact potential in an abrupt p-n junction diode and show that 3
    4 the junction potential for p-n junction diode depends on the ratio between the majority
    carriers of one side to the minority carrier of other side.
    5 Estimate the hole current in an abrupt p-n homo-junction diode at an applied bias V in 3
    terms of its minority carrier concentration.
    An abrupt Si p-n junction has Na = 1017/cm3 on one side and Nd = 1015/cm3 on other side 5
    6 with the intrinsic carrier concentration of 1010/cm3. Draw the equilibrium band diagram
    of the junction. Determine the maximum electric filed and minority carrier
    concentration at the p-type and n-type at equilibrium. Assume the dielectric constant of
    Si is 11.8.
    7 Draw the equilibrium band alignments for the following band homojunctions 2

    Ef1
    Ef3
    (a)
    Ef2

    Ef2
    (b)
    Ef3
    Ef1

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