Zibo Seno Electronic Engineering Co.,Ltd.

7N60 7N65
Power MOSFET

7.0 Amps, 600/650 Volts

N-CHANNEL POWER MOSFET
1 1
„ DESCRIPTION
TO-220 ITO-220/TO-220F
7N60 7N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
1 1
switching applications in switching power supplies and adaptors.
TO-262/I2PAK TO-263/D2PAK
„ FEATURES
* RDS(ON) = 1.0Ω @VGS = 10 V
RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra Low Gate Charge (Typical 29 nC ) 1
1
* Low Reverse Transfer Capacitance ( CRSS = typical 16pF )
* Fast Switching Capability TO-251/IPAK TO-252/DPAK
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Pin Assignment
Ordering Number Package
1 2 3
TO-220 G D S
ITO-220/TO-220F G D S
7N60
TO-262/I2PAK G D S
7N65 TO-263/D2PAK G D S
TO-251/IPAK G D S
TO-252/DPAK G D S
Note: Pin Assignment: G: Gate D: Drain S: Source

Part No. Package Packing

7N6* -TU TO-251 75pcs / Tube
7N6* -TR TO-252 2.5Kpcs / 13” Reel
7N6* -TU TO-252 75pcs / Tube
7N6* -TU TO-220 50pcs / Tube
7N6* -TU ITO-220 50pcs / Tube
7N6* -TU TO-262 50pcs / Tube
7N6* -TU TO-263 50pcs / Tube
7N6* -TR TO-263 800pcs / 13" Reel

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7N60 7N65
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
7N60 600 V
Drain-Source Voltage VDSS
7N65 650 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 7.0 A
Continuous ID 7.0 A
Drain Current
Pulsed (Note 2) IDM 29.6 A
Single Pulsed (Note 3) EAS 530 mJ
Avalanche Energy
Repetitive (Note 2) EAR 14.2 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220 142 W
TO-220F 48 W
PD
Power Dissipation TO-262/I2PAK 142 W
(TC = 25°С)
TO-263/D2PAK 142 W
Junction Temperature TJ +150 °С
Ambient Operating Temperature TOPR -55 ~ +150 °С
Storage Temperature TSTG -55 ~ +150 °С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=7.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤7.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER SYMBOL RATING UNIT

TO-220/ITO-220/TO-220F 62.5
Junction to Ambient TO-262/TO-263 θJA °C/W
TO-251/ TO-252 160
TO-220/TO-262/TO-263 1.25

Junction to Case ITO-220/TO-220F θJC 3.5 °C/W

TO-251/ TO-252 2.5

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7N60 7N65
Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
7N60 600 V
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA
7N65 650 V
Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA
Forward VGS = 30V, VDS = 0V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -30V, VDS = 0V -100 nA
ID = 250 μA, Referenced to
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.67 V/°С
25°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =3.51A 1.2 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1400 pF
Output Capacitance COSS VDS =25V, VGS =0V,f =1MHz 180 pF
Reverse Transfer Capacitance CRSS 16 21 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD (ON) 70 ns
VDD =300V, ID =7.0A,
Turn-On Rise Time tR 170 ns
RG=25Ω
Turn-Off Delay Time tD(OFF) 140 ns
(Note 1, 2)
Turn-Off Fall Time tF 130 ns
Total Gate Charge QG VDS=480V, VGS=10V, 29 38 nC
Gate-Source Charge QGS ID=7.0A 7 nC
Gate-Drain Charge QGD (Note 1, 2) 14.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD =7.0 A 1.4 V
Continuous Drain-Source Current ISD 7.0 A
Pulsed Drain-Source Current ISM 29.6 A
Reverse Recovery Time tRR VGS = 0 V, ISD = 7.0A, 320 ns
Reverse Recovery Charge QRR di/dt = 100 A/μs (Note1) 2.4 μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature

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7N60 7N65
Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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7N60 7N65
Power MOSFET
„ TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS
IAS

RD
VDD
ID(t)
VDS(t)
VDD
10V D.U.T.
tp
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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7N60 7N65
 TYPICAL CHARACTERISTICS Power MOSFET
On-State Characteristics Transfer Characteristics

10 VGS 10
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
1

0.1

Notes:
1. 250µs Pulse Test Notes:
2. TC=25°C 1. VDS=50V
0.1 2. 250µs Pulse Test
0.1 1 10 2 4 6 8 10
Drain-to-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

On-Resistance Variation vs. On State Current vs.

Drain Current and Gate Voltage Allowable Case Temperature
6
10
Reverse Drain Current, IDR (A)

5
Drain-Source On-Resistance,

4 VGS=20V
RDS(ON) (Ω)

3 VGS=10V
1

Notes:
1 1. VGS=0V
Note: TJ=25°C 2. 250µs Test
0 0.1
0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain Current, ID (A) Source-Drain Voltage, VSD (V)

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7N60 7N65
Power MOSFET
 TYPICAL CHARACTERISTICS(Cont.)

Drain-Source On-Resistance, RDS(ON)

Drain-Source Breakdown Voltage, BVDSS

(Normalized)
(Normalized)

Maximum Drain Current vs. Case

Transient Thermal Response Curve
Temperature
7.5
1
6.25
D=0.5

0.2 5.0

0.1
0.1 3.75
0.05

0.02
2.5
0.01
Notes:
1. θJC (t) = 1.18°C/W Max. 1.25
Single Pulse
2. Duty Factor, D=t1/t2
0.01 3. TJM-TC=PDM×θJC (t)
0
10-5 10-4 10-3 10-2 10-1 100 101 25 50 75 100 125 150
Square Wave Pulse Duration, t1 (sec) Case Temperature, TC (°C)

Safe Operating Area – 600V

Operation in This Area is Limited by RDS(on)

101 100µs
1ms

10ms
100
DC
Notes:
10-1 1. TJ=25°C
2. TJ=150°C
3. Single Pulse

10-2 600
100 101 102 103
Drain-Source Voltage, VDS (V)

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