CMP3803/CMB3803/CMI3803

N-Ch 30V Fast Switching MOSFETs

General Description Product Summary

The 3803 is N-ch MOSFETs

BVDSS RDSON ID
with extreme high cell density ,
30V < 4m 150A
which provide excellent RDSON
and gate charge for most of the
Applications
synchronous buck converter
HIGH CURRENT, HIGH SPEED SWITCHING
applications. DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
Features AUTOMOTIVE ENVIRONMENT

Simple Drive Requirement

TO220 / TO263 / TO262 Pin Configuration
Fast Switching
Low On-Resistance

G GD
D S
S
TO-220 TO-263 G D S TO-262
Absolute Maximum Ratings (CMP3803) (CMB3803) (CMI3803)

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V
VGS Gate-Sou ce Voltage 20 V
ID@TC=25 Continuous Drain Current 1 150 A
1
ID@TC=100 Continuous Drain Current 85 A
2
IDM Pulsed Drain Current 450 A
3
EAS Single Pulse Avalanche Energy 600 mJ
IAS Avalanche Current 85 A
PD Total Power Dissipation 240 W
TSTG Storage Temperature Range -65 to 175
TJ Operating Junction Temperature Range -65 to 175

Thermal Data

Symbol Parameter Typ. Max. Unit

R JA Thermal Resistance Junction-ambient 1 --- 62.5 /W
R JC Thermal Resistance Junction-case --- 0.7 /W

1
CMP3803/CMB3803/CMI3803
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V

RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=40A --- --- 4 m

VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 --- 3 V

VDS=30V , VGS=0V --- --- 1

IDSS Drain-Source Leakage Current uA
VDS=30V , VGS=0V ,TC=125 --- --- 10
IGSS Gate-Source Leakage Current VGS 20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS>ID(on) X RDS(on )max , ID=15A --- 50 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- --- 4.7
Qg Total Gate Charge I D = 100A --- 85 120
Qgs Gate-Source Charge V DD = 2 4 V --- 26 --- nC
Qgd Gate-Drain Charge VGS = 4.5V --- 40 ---
Td(on) Turn-On Delay Time V DD = 1 5 V --- 42 ---
Tr Rise Time ID = 4 0 A --- 110 ---
ns
Td(off) Turn-Off Delay Time R G =4.7 Ω --- 150 ---
Tf Fall Time V GS=4.5V --- 80 ---
Ciss Input Capacitance --- 4500 ---
Coss Output Capacitance VDS=25V , VGS=0V , f=1MHz --- 1000 --- pF
Crss Reverse Transfer Capacitance --- 420 ---

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1
IS Continuous Source Current --- --- 150 A
2
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 450 A
2
VSD Diode Forward Voltage VGS=0V , IS=100A , TJ=25 --- --- 1.5 V

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=56A

2
 CMP3803/CMB3803/CMI3803
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics

1000

T J = 2 5°C

I D , D rain-to-So urce C urren t (A )

100 TJ = 1 75 °C
ID- Drain Current (A)

10

0.1

V DS = 2 5V
2 0µ s P U L S E W ID TH
0.01
A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Vds Drain-Source Voltage (V)
V G S , G ate-to -So urce Voltag e (V)
Output Characteristics Typical Transfer Characteristics

2.0 140
I D = 1 20 A
R D S (on ) , D rain-to-S ource O n R esistance

�
LIMITED BY PACKAGE
120

1.5
100
I D , Drain Current (A)
(N orm alized)

80
1.0
60

40
0.5

20

V G S = 10 V 0
0.0 A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175

T J , Junction T em perature (°C ) TC , Case Temperature ( ° C)

Normalized On-Resistance Maximum Drain Current Vs.

Vs. Temperature Case Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

0.05

0.02
0.01 � SINGLE PULSE
(THERMAL RESPONSE)
� P DM

t1
t2

0.01
� Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Maximum Effective Transient Thermal Impedance, Junction-to-Case