MB2S, MB4S & MB6S

Vishay General Semiconductor

Miniature Glass Passivated Single-Phase

Surface Mount Bridge Rectifier
FEATURES
~ • UL recognition, file number E54214
~ • Saves space on printed circuit boards
• Ideal for automated placement
• High surge current capability

~ • Meets MSL level 1, per J-STD-020, LF maximum

peak of 250 °C
• Solder dip 260 °C, 40 s
~
• Component in accordance to RoHS 2002/95/EC
TO-269AA (MBS) and WEEE 2002/96/EC

TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
PRIMARY CHARACTERISTICS rectification for power supply, lighting ballaster, Battery
charger, home appliances, office equipment, and
IF(AV) 0.5 A
telecommunication applications.
VRRM 200 V, 400 V, 600 V
IFSM 35 A MECHANICAL DATA
IR 5 µA Case: TO-269AA (MBS)
VF 1.0 V Epoxy meets UL 94V-0 flammability rating
TJ max. 150 °C Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MB2S MB4S MB6S UNIT
Device marking code 2 4 6
Maximum repetitive peak reverse voltage VRRM 200 400 600 V
Maximum RMS voltage VRMS 140 280 420 V
Maximum DC blocking voltage VDC 200 400 600 V
Maximum average
on glass-epoxy P.C.B. 0.5 (1)
forward output rectified IF(AV) A
on aluminum substrate 0.8 (2)
current (Fig. 1)

Peak forward surge current 8.3 ms single half

IFSM 35 A
sine-wave superimposed on rated load
Rating for fusing (t < 8.3 ms) I2t 5.0 A 2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad

Document Number: 88661 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 01-Feb-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
MB2S, MB4S & MB6S
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNIT
Maximum instantaneous
0.4 A VF 1.0 V
forward voltage drop per diode
Maximum DC reverse current at rated TA = 25 °C 5.0
IR µA
DC blocking voltage per diode TA = 125 °C 100
Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MB2S MB4S MB6S UNIT
RθJA 85 (1)
Typical thermal resistance RθJA 70 (2) °C/W
RθJL 20 (1)

Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2S-E3/45 0.22 45 100 Tube
MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

0.8 35
TA = 40 °C
Average Forward Rectified Current (A)

Aluminum Substrate
0.7 Single Half Sine-Wave
Peak Forward Surge Current (A)

30

0.6
25
0.5
20 f = 50 Hz f = 60 Hz
0.4 Glass
Epoxy
15
0.3 P.C.B.

10
0.2

0.1 Resistive or Inductive Load 5

1.0 Cycle

0 0
0 20 40 60 80 100 120 140 160 1 10 100
Ambient Temperature (°C) Number of Cycles

Figure 1. Derating Curve for Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88661
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 01-Feb-08
 MB2S, MB4S & MB6S
Vishay General Semiconductor

10 30
Instantaneous Forward Current (A)

TJ = 25 °C
25 f = 1.0 MHz

Junction Capacitance (pF)

TJ = 150 °C Vsig = 50 mVp-p

1 TJ = 25 °C 20

15

0.1 10

Pulse Width = 300 µs

1 % Duty Cycle 5

0.01 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 1 10 100 1000
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Figure 3. Typical Forward Voltage Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode

100
Instantaneous Reverse Leakage

TJ = 125 °C
10
Current (µA)

0.1

TJ = 25 °C

0.01
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-269AA (MBS)
0.029 (0.74)
0.017 (0.43) Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)

0.161 (4.10) 0.272 (6.90)

0.144 (3.65) 0.252 (6.40)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55) 0 to 8° 0.205 (5.21)
0.195 (4.95) 0.105 (2.67)
0.095 (2.41)
0.049 (1.24)
0.106 (2.70) 0.039 (0.99)
0.090 (2.30) 0.062 (1.57)
0.058 (1.47)

0.0075 (0.19) 0.008 (0.20) 0.016 (0.41)

0.114 (2.90) 0.0065 (0.16) 0.004 (0.10) 0.006 (0.15)
0.094 (2.40) 0.114 (2.90) 0.018 (0.46)
0.038 (0.96) 0.110 (2.80) 0.014 (0.36)
0.019 (0.48) 0.058 (1.47)
0.054 (1.37)

Document Number: 88661 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 01-Feb-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
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Vishay

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1