IPW50R280CE,IPP50R280CE

MOSFET
500VCoolMOSªCEPowerTransistor PG-TO247 PG-TO220
tab
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Drain
Extremelylowswitchingandconductionlossesmakeswitching Pin 2
applicationsevenmoreefficient,morecompact,lighterandcooler.
Gate

Features Pin 1

•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Source
Pin 3
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)

Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 550 V
RDS(on),max 0.28 Ω
ID 18.1 A
Qg,typ 32.6 nC
ID,pulse 42.9 A
Eoss @ 400V 3.2 µJ

Type/OrderingCode Package Marking RelatedLinks

IPW50R280CE PG-TO 247
5R280CE see Appendix A
IPP50R280CE PG-TO 220

Final Data Sheet 1 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 18.1 TC = 25°C
Continuous drain current1) ID A
- - 11.4 TC = 100°C
Pulsed drain current2) ID,pulse - - 42.9 A TC=25°C
Avalanche energy, single pulse EAS - - 231 mJ ID =5.2A; VDD = 50V
Avalanche energy, repetitive EAR - - 0.35 mJ ID =5.2A; VDD = 50V
Avalanche current, repetitive IAR - - 5.2 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V
-20 - 20 static;
Gate source voltage VGS V
-30 - 30 AC (f>1 Hz)
Power dissipation (non FullPAK)
Ptot - - 119 W TC=25°C
TO-247, TO-220
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Mounting torque (non FullPAK) TO-247,
- - - 60 Ncm M3 and M3.5 screws
TO-220
Continuous diode forward current IS - - 12.8 A TC=25°C
Diode pulse current 2)
IS,pulse - - 42.9 A TC = 25°C
VDS=0...400V,ISD<=IS,Tj=25°C,
Reverse diode dv/dt3) dv/dt - - 15 V/ns
tcond<2µs
VDS=0...400V,ISD<=IS,Tj=25°C,
Maximum diode commutation speed3) dif/dt - - 500 A/µs
tcond<2µs

2Thermalcharacteristics

Table3Thermalcharacteristics(nonFullPAK)TO-247,TO-220
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.05 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

1)
Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
2)
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 3 Rev.2.2,2016-06-13
 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

3Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.35mA
- - 1 VDS=500V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
- 0.25 0.28 VGS=13V,ID=4.2A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.66 - VGS=13V,ID=4.2A,Tj=150°C
Gate resistance RG - 3 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 773 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 49 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
Co(er) - 40 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 173 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=5.2A,
Turn-on delay time td(on) - 8 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=5.2A,
Rise time tr - 6.4 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=5.2A,
Turn-off delay time td(off) - 40 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=5.2A,
Fall time tf - 7.6 - ns
RG=3.4Ω

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 4.2 - nC VDD=400V,ID=5.2A,VGS=0to10V
Gate to drain charge Qgd - 17.1 - nC VDD=400V,ID=5.2A,VGS=0to10V
Gate charge total Qg - 32.6 - nC VDD=400V,ID=5.2A,VGS=0to10V
Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=5.2A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet 4 Rev.2.2,2016-06-13
 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.85 - V VGS=0V,IF=5.2A,Tf=25°C
Reverse recovery time trr - 230 - ns VR=400V,IF=5.2A,diF/dt=100A/µs
Reverse recovery charge Qrr - 2.2 - µC VR=400V,IF=5.2A,diF/dt=100A/µs
Peak reverse recovery current Irrm - 17.5 - A VR=400V,IF=5.2A,diF/dt=100A/µs

Final Data Sheet 5 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
102
120

110
1 µs
100
101
90 10 µs

80
100 µs
70 1 ms
Ptot[W]

ID[A]
100 10 ms
60

50
DC
40

30 10-1

20

10

0 10-2
0 40 80 120 160 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

1 µs
101

10 µs 100
0.5
ZthJC[K/W]
ID[A]

1 ms 100 µs 0.2
100
0.1
10 ms
0.05
10-1 0.02
DC
10-1 0.01

single pulse

10-2 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 6 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

Typ.outputcharacteristicsTj=25°C Typ.outputcharacteristicsTj=125°C
60 35

30 20 V
50
10 V
20 V

25
40
10 V 8V
8V 20
7V
ID[A]

ID[A]
30

15
7V
6V
20
10
5.5 V
6V
10 5.5 V 5V
5
5V 4.5 V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance
1.80 0.80

1.60 0.70

1.40 0.60

5.5 V 6.5 V
1.20 0.50 98%
5V 6V 7V
RDS(on)[Ω]

RDS(on)[Ω]

typ
1.00 0.40
10 V

0.80 0.30

0.60 0.20

0.40 0.10

0.20 0.00
0 10 20 30 40 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=4.2A;VGS=13V

Final Data Sheet 7 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

Typ.transfercharacteristics Typ.gatecharge
50 10

45 9
25 °C

40 8 120 V

35 7
400 V

30 6

VGS[V]
ID[A]

25 5

20 150 °C 4

15 3

10 2

5 1

0 0
0 2 4 6 8 10 0 10 20 30 40
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=5.2Apulsed;parameter:VDD

Avalancheenergy Drain-sourcebreakdownvoltage
260 580

240

220 560

200
540
180

160
520
EAS[mJ]

VBR(DSS)[V]

140

120
500
100

80
480
60

40 460
20

0 440
0 25 50 75 100 125 150 175 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
EAS=f(Tj);ID=5.2A;VDD=50V VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

Typ.capacitances Typ.Cossstoredenergy
4
10 4.5

4.0

Ciss 3.5
103

3.0

2.5

Eoss[µJ]
C[pF]

102
Coss
2.0

1.5

101
Crss 1.0

0.5

100 0.0
0 100 200 300 400 500 0 100 200 300 400 500
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS)

Forwardcharacteristicsofreversediode
102

101

125 °C
25 °C
IF[A]

100

10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD[V]
IF=f(VSD);parameter:Tj

Final Data Sheet 9 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 10 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

6PackageOutlines

Figure1OutlinePG-TO247,dimensionsinmm/inches

Final Data Sheet 11 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

Figure2OutlinePG-TO220,dimensionsinmm/inches

Final Data Sheet 12 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

7AppendixA

Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.2,2016-06-13

 500VCoolMOSªCEPowerTransistor
IPW50R280CE,IPP50R280CE

RevisionHistory
IPW50R280CE, IPP50R280CE

Revision:2016-06-13,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-06-29 Release of final version
2.1 2014-06-06 Removal of TO-220FP
2.2 2016-06-13 Updated ID ratings, Zth, SOA & Power Dissipation Curves

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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©2016InfineonTechnologiesAG
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.2,2016-06-13