Multifunction Quad Power Amplifier With Built-In Diagnostics Features
Multifunction Quad Power Amplifier With Built-In Diagnostics Features
Multifunction Quad Power Amplifier With Built-In Diagnostics Features
BLOCK DIAGRAM
IN RF F OUT RF+
16/30dB
Short Circuit
Protection &
OUT RF-
Diagnostic
IN RR R OUT RR+
16/30dB
PW_GND
THERMAL DATA
Symbol Parameter Value Unit
Rth j-case Thermal Resistance Junction to case Max. 1 °C/W
27 TAB
26 DATA
25 PW_GND RR
24 OUT RR-
23 CK
22 OUT RR+
21 VCC2
20 OUT RF-
19 PW_GND RF
18 OUT RF+
17 AC GND
16 IN RF
15 IN RR
14 S_GND
13 IN LR
12 IN LF
11 SVR
10 OUT LF+
9 PW_GND LF
8 OUT LF-
7 VCC1
6 OUT LR+
5 CD-OUT
4 OUT LR-
3 PW_GND LR
2 STBY
1 TAB
D00AU1230
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TDA7562
C8 C7
0.1µF 3300µF
Vcc1 Vcc2
V(4V .. VCC)
7 21 +
2 18
19 OUT RF
DATA 26
20
I2C BUS -
+
CLK 23 22
C1 0.22µF 25 OUT RR
IN RF 16 24
-
+
C2 0.22µF 10
IN RR 15 9 OUT LF
8
C3 0.22µF -
+
IN LF 12 6
3 OUT LR
C4 0.22µF
4
IN LR 13 -
TAB
S-GND 1, 27
14 17 11 5
47K
C5 C6 V
1µF 10µF
D00AU1231A
CD OUT
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TDA7562
ELECTRICAL CHARACTERISTICS
(Refer to the test circuit, VS = 14.4V; RL = 4Ω; f = 1KHz; Tamb = 25°C; unless otherwise specified.)
Symbol Parameter Test Condition Min. Typ. Max. Unit
POWER AMPLIFIER
VS Supply Voltage Range 8 18 V
Id Total Quiescent Drain Current 150 300 mA
PO Output Power EIAJ (VS = 13.7V) 32 35 W
THD = 10% 22 25 W
THD = 1% 20 W
RL = 2Ω; EIAJ (VS = 13.7V) 50 55 W
RL = 2Ω; THD 10% 32 38 W
RL = 2Ω; THD 1% 30 W
RL = 2Ω; MAX POWER 60 W
THD Total Harmonic Distortion PO = 1W to 10W; f = 1kHz 0.04 0.1 %
PO = 1-10W, f = 10kHz 0.02 0.5 %
GV = 16dB; VO = 0.1 to 5VRMS 0.02 0.05 %
CT Cross Talk f = 1KHz to 10KHz, Rg = 600Ω 50 60 dB
RIN Input Impedance 60 100 130 KΩ
GV1 Voltage Gain 1 29.5 30 30.5 dB
∆GV1 Voltage Gain Match 1 -1 1 dB
GV2 Voltage Gain 2 15.5 16 16.5 dB
∆GV2 Voltage Gain Match 2 -1 1 dB
EIN1 Output Noise Voltage 1 Rg = 600Ω 20Hz to 22kHz 50 100 µV
EIN2 Output Noise Voltage 2 Rg = 600Ω; GV = 16dB 15 30 µV
20Hz to 22kHz
SVR Supply Voltage Rejection f = 100Hz to 10kHz; Vr = 1Vpk; 50 60 dB
Rg = 600Ω
BW Power Bandwidth 100 KHz
ASB Stand-by Attenuation 90 110 dB
ISB Stand-by Current 2 100 µA
AM Mute Attenuation 80 100 dB
VOS Offset Voltage Mute & Play -100 0 100 mV
VAM Min. Supply Mute Threshold 7 7.5 8 V
TON Turn ON Delay D2/D1 (IB1) 0 to 1 5 20 ms
TOFF Turn OFF Delay D2/D1 (IB1) 1 to 0 5 20 ms
VSBY St-By/Mute pin for St-By 0 1.5 V
VMU St-By/Mute pin for Mute 3.5 5 V
VOP St-By/Mute pin for Operating 7 VS V
IMU St-By/Mute pin Current VSTBY/MUTE = 8.5V 20 40 µA
VSTBY/MUTE < 1.5V 0 10 µA
CDLK Clip Det High Leakage Current CD off 0 15 µA
CDSAT Clip Det Sat. Voltage CD on; ICD = 1mA 300 mV
CDTHD Clip Det THD level D0 (IB1) = 1 5 10 15 %
D0 (IB1) = 0 1 2 3 %
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TDA7562
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TDA7562
Figure 2. Quiescent Current vs. Supply Voltage Figure 5. Distortion vs. Output Power (4Ω)
Id (mA) THD (%)
250 10
230
Vin = 0 Vs = 14.4 V
210 RL = 4 Ohm
NO LOADS
190
1
170
150 f = 10 KHz
130
0.1
110 f = 1 KHz
90
70
50 0.01
8 10 121 41 6 18 0.1 1 10
Vs (V) Po (W)
Figure 3. Output Power vs. Supply Voltage (4Ω) Figure 6. Distortion vs. Output Power (2Ω)
Po (W) THD (%)
70 10
65
60 Po-max Vs = 14.4 V
RL = 4 Ohm
55 f = 1 KHz RL = 2 Ohm
50 1
45 THD = 10 %
f = 10 KHz
40
35
30 f = 1 KHz
0.1
25
20 THD = 1 %
15
10
5 0.01
8 9 10 11 12 13 14 15 16 17 18 0.1 1 10
Vs (V) Po (W)
Figure 4. Output Power vs. Supply Voltage (2Ω) Figure 7. Distortion vs. Output Power (4Ω)
Po (W) THD (%)
80 10
75
Po-max
70
RL = 2 Ohm Vs = 14.4 V
65 f = 1 KHz RL = 4 Ohm
60 Po = 4 W
55 1
50 THD = 10 %
45
40
35
30 0.1
25 THD = 1 %
20
15
10
5 0.01
8 9 10 11 12 13 14 15 16 10 100 1000 10000
Vs (V) f (Hz)
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TDA7562
Figure 8. Distortion vs. Frequency (2Ω) Figure 11. Power Dissipation & Efficiency vs.
Output Power (4Ω, STD, SINE)
THD (%) Ptot (W) n (%)
10 90 90
80 Vs = 14.4 V 80
RL = 4 x 4 Ohm n
Vs = 14.4 V 70 f = 1 KHz SINE 70
RL = 2 Ohm
1 Po = 8 W 60 60
50 50
Ptot
40 40
0.1
30 30
20 20
10 10
0.01
10 100 1000 10000 0 0
f (Hz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26
Po (W)
Figure 9. Crosstalk vs. Frequency Figure 12. Power Dissipation vs. Average
Ouput Power (Audio Program
CROSSTALK (dB) Simulation, 4Ω)
90
Ptot (W)
80 45
70 40 Vs = 14 V
RL = 4 x 4 Ohm
35 GAUSSIAN NOISE
60
CLIP
RL = 4 Ohm START
30
50 Po = 4 W
Rg = 600 Ohm
25
40
20
30
15
20
10 100 1000 10000 10
f (Hz)
5
0 1 2 3 4 5
Po (W)
Figure 10. Supply Voltage Rejection vs. Freq. Figure 13. Power Dissipation vs. Average
Ouput Power (Audio Program
SVR (dB) Simulation, 2Ω)
90
Ptot (W)
80 90
80
70 Vs = 14 V
70 RL = 4 x 2 Ohm
GAUSSIAN NOISE CLIP
60 START
60
50 50
Rg = 600 Ohm 40
40 Vripple= 1 Vpk
30
30
20
20
10 100 1000 10000 10
f (Hz)
0
0 1 2 3 4 5 6 7 8
Po (W)
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TDA7562
Figure 14. Restart timing without Diagnostic Enable (Each 1mS time, a sampling of the fault is done)
Out
1mS 1mS 1mS 1mS
1-2mS
t
Overcurrent and short
circuit protection intervention Short circuit removed
(i.e. short circuit to GND)
t
Overcurrent and short
Short circuit removed
(i.e. short circuit to GND)
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TDA7562
As for SHORT TO GND / Vs the fault-detection thresholds remain unchanged from 30 dB to 16 dB gain setting.
They are as follows:
Concerning SHORT ACROSS THE SPEAKER , the threshold varies from 30 dB to 16 dB gain setting, since
different loads are expected (either normal speaker's impedance or high impedance). The values in case of 30
dB gain are as follows:
If the Line-Driver mode (Gv= 16 dB and Line Driver Mode diagnostic = 1) is selected, the same thresholds will
change as follows:
MULTIPLE FAULTS
When more misconnections are simultaneously in place at the audio outputs, it is guaranteed that at least one
of them is initially read out. The others are notified after successive cycles of I2C reading and faults removal,
provided that the diagnostic is enabled.
The table below shows all the couples of double-fault possible. It should be taken into account that a short circuit
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TDA7562
S. GND (so) / S. GND (sk) in the above table make a distinction according to which of the 2 outputs is shorted
to ground (test-current source side= so, test-current sink side = sk). More precisely, so = CH+, sk = CH-.
FAULTS AVAILABILITY
All the results coming from I2Cbus, by read operations, are the consequence of measurements inside a defined
period of time. If the fault is stable throughout the whole period, it will be sent out.
To guarantee always resident functions, every kind of diagnostic cycles will be reactivate after any I2C reading
operation. So, when the micro reads the I2C, a new cycle will be able to start, but the read data will come from
the previous diag. cycle (i.e. The device is in turned On, with a short to Gnd, then the short is removed and micro
reads I2C. The short to Gnd is still present in bytes, because it is the result of the previous cycle. If another I2C
reading operation occurs, the bytes do not show the short). In general to observe a change in Diagnostic bytes,
two I2C reading operations are necessary.
FAST MUTING
The muting time can be shortened to less than 1ms by setting (IB2) D5 = 1. This option can be useful in transient
battery situations (i.e. during car engine cranking) to quickly turnoff the amplifier for avoiding any audible effects
caused by noise/transients being injected by preamp stages.
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TDA7562
SDA
SCL
SCL
I2CBUS
SDA
D99AU1032
START STOP
SCL 1 2 3 7 8 9
SDA
MSB
ACKNOWLEDGMENT
START D99AU1033 FROM RECEIVER
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TDA7562
SOFTWARE SPECIFICATIONS
All the functions of the TDA7562 are activated by I2C interface.
The bit 0 of the "ADDRESS BYTE" defines if the next bytes are write instruction (from µP to TDA7562) or read
instruction (from TDA7562 to µP).
Chip Address:
D7 D0
1 1 0 1 1 0 0 X D8 Hex
X = 0 Write to device
X = 1 Read from device
If R/W = 0, the µP sends 2 "Instruction Bytes": IB1 and IB2.
IB1
D7 X
Diagnostic enable (D6 = 1)
D6
Diagnostic defeat (D6 = 0)
Offset Detection enable (D5 = 1)
D5
Offset Detection defeat (D5 = 0)
Front Channel
D4 Gain = 30dB (D4 = 0)
Gain = 16dB (D4 = 1)
Rear Channel
D3 Gain = 30dB (D3 = 0)
Gain = 16dB (D3 = 1)
Mute front channels (D2 = 0)
D2
Unmute front channels (D2 = 1)
Mute rear channels (D1 = 0)
D1
Unmute rear channels (D1 = 1)
CD 2% (D0 = 0)
D0
CD 10% (D0 = 1)
IB2
D7 X
D2 X
D1 X
D0 X
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TDA7562
If R/W = 1, the TDA7562 sends 4 "Diagnostics Bytes" to µP: DB1, DB2, DB3 and DB4.
DB1
D7 Thermal warning active (D7 = 1)
D5 X
D4 X
Channel LF
D3 Normal load (D3 = 0)
Short load (D3 = 1)
Channel LF
D2 No output offset (D2 = 0)
Output offset detection (D2 = 1)
Channel LF
D1 No short to Vcc (D1 = 0)
Short to Vcc (D1 = 1)
Channel LF
D0 No short to GND (D1 = 0)
Short to GND (D1 = 1)
DB2
D6 X
D5 X
D4 X
D3 Channel LR
Normal load (D3 = 0)
Short load (D3 = 1)
D2 Channel LR
No output offset (D2 = 0)
Output offset detection (D2 = 1)
D1 Channel LR
No short to Vcc (D1 = 0)
Short to Vcc (D1 = 1)
D0 Channel LR
No short to GND (D1 = 0)
Short to GND (D1 = 1)
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TDA7562
B3
D7 Stand-by status (= IB1 - D4)
D5 X
D4 Channel RF
Turn-on diagnostic (D4 = 0)
X
D3 Channel RF
Normal load (D3 = 0)
Short load (D3 = 1)
D2 Channel RF
No output offset (D2 = 0)
Output offset detection (D2 = 1)
D1 Channel RF
No short to Vcc (D1 = 0)
Short to Vcc (D1 = 1)
D0 Channel RF
No short to GND (D1 = 0)
Short to GND (D1 = 1)
DB4
D7 X
D6 X
D5 X
D4 X
D3 Channel RR
RNormal load (D3 = 0)
Short load (D3 = 1)
D2 Channel RR
No output offset (D2 = 0)
Output offset detection (D2 = 1)
D1 Channel RR
No short to Vcc (D1 = 0)
Short to Vcc (D1 = 1)
D0 Channel RR
No short to GND (D1 = 0)
Short to GND (D1 = 1)
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TDA7562
X0000000 XXX1XX11
X0XXXXXX XXX0XXXX
XX1XX11X XXX1XXXX
4 - Offset detection procedure stop and reading operation (the results are valid only for the offset detection bits
(D2 of the bytes DB1, DB2, DB3, DB4).
Start Address byte with D0 = 1 ACK DB1 ACK DB2 ACK DB3 ACK DB4 ACK STOP
■ The purpose of this test is to check if a D.C. offset (2V typ.) is present on the outputs, produced by input
capacitor with anomalous leackage current or humidity between pins.
■ The delay from 4 to 5 can be selected by software, starting from T.B.D. ms
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TDA7562
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.45 4.50 4.65 0.175 0.177 0.183 OUTLINE AND
B 1.80 1.90 2.00 0.070 0.074 0.079 MECHANICAL DATA
C 1.40 0.055
D 0.75 0.90 1.05 0.029 0.035 0.041
E 0.37 0.39 0.42 0.014 0.015 0.016
F (1) 0.57 0.022
G 0.80 1.00 1.20 0.031 0.040 0.047
G1 25.75 26.00 26.25 1.014 1.023 1.033
H (2) 28.90 29.23 29.30 1.139 1.150 1.153
H1 17.00 0.669
H2 12.80 0.503
H3 0.80 0.031
L (2) 22.07 22.47 22.87 0.869 0.884 0.904
L1 18.57 18.97 19.37 0.731 0.747 0.762
L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626
L3 7.70 7.85 7.95 0.303 0.309 0.313
L4 5 0.197
L5 3.5 0.138
M 3.70 4.00 4.30 0.145 0.157 0.169
M1 3.60 4.00 4.40 0.142 0.157 0.173
N 2.20 0.086
O 2 0.079
R 1.70 0.067
R1 0.5 0.02
R2 0.3 0.12
R3 1.25 0.049
R4 0.50 0.019
V 5˚ (Typ.)
V1 3˚ (Typ.) Flexiwatt27 (vertical)
V2 20˚ (Typ.)
V3 45˚ (Typ.)
(1): dam-bar protusion not included
(2): molding protusion included
V
C
B
V
H
H1
V3
H2 A
H3
O
R3
R4
L4
V1
R2
N
L2
R
L L1
V1
L3
V2
R2 D
R1
L5 R1 R1
Pin 1
E
G G1 F
FLEX27ME
M M1
7139011
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TDA7562
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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