Assignment - EEE 103

ROYAL UNIVERSITY OF DHAKA Fall 2021
ASSIGNMENT
Program: B.Sc. (HON’S) in CSE (EVE)
Course Code & Title

EEE 103 - Electronics Engineering
Submitted by
Submitted to
 Junction Diode
Junction diode is a semiconductor with n-type and p-type materials that are chemically combined,
forms a junction that allows conduction in one direction only.
 Symbol
 Static I-V Characteristics

 Forward Biased PN Junction Diode
A p-n junction diode is two-terminal or two-electrode semiconductor device, which allows the electric
current in only one direction while blocks the electric current in opposite or reverse direction. If the
diode is forward biased, it allows the electric current flow. On the other hand, if the diode is reverse
biased, it blocks the electric current flow.
In n-type semiconductors, free electrons are the majority charge carriers whereas in p-type
semiconductors, holes are the majority charge carriers. When the n-type semiconductor is joined with
the p-type semiconductor, a p-n junction is formed.
The process of applying the external voltage to a p-n junction semiconductor diode is called biasing.
If the p-n junction diode is forward biased, it allows the electric current flow. Under forward biased
condition, the p-type semiconductor is connected to the positive terminal of battery whereas; the n-type
semiconductor is connected to the negative terminal of battery.
In forward biased p-n junction diode anode (p-type semiconductor) terminal is a positive terminal
whereas cathode (n-type semiconductor) terminal is negative terminal.
Anode terminal supplies holes to the p-n junction. In other words, anode is the source of positive
charge carriers (holes), the positive charge carriers (holes) begins their journey at anode terminal and
travel through the diode and ends at cathode terminal.
Cathode supplies free electrons to the p-n junction. In other words, cathode is the source of free
electrons, the negative charge carriers (free electrons) begins their journey at cathode terminal and
travel through the diode and ends at anode terminal.
The free electrons are attracted towards the anode or positive terminal whereas the holes are attracted
towards the cathode or negative terminal.
The holes which moves from positive terminal (anode) to the negative terminal (cathode) is the
conventional direction of current. The free electrons moving from negative terminal (cathode) to the
positive terminal (anode) actually carry the electric current. However, due to the convention the current
direction is from positive terminal to the negative terminal.
 Forward Biased PN Junction Diode characteristics

A diode has a depletion region with a fixed barrier potential. This depletion region has a predefined
width. This width will vary for a Silicon diode and a Germanium diode. The width highly depends on
the type of semiconductor used to make p-n junction, the level of doping etc. When apply a voltage to
the terminals of diode, the width of depletion region slowly starts decreasing. The reason for this is, in
forward bias we apply voltage in a direction opposite to that of barrier potential. The p-side of diode is
connected to positive terminal and n-side of diode is connected to negative terminal of battery. So the
electrons in n-side get pushed towards the junction (by force of repulsion) and the holes in p-side get
pushed towards the junction. As the applied voltage increases from 0 volts to 0.7 volts,
the depletion region width reduces to zero. This means depletion region vanishes at 0.7 volts of applied
voltage. This results in increased diffusion of electrons from n-side to p-side region and the increased
diffusion of holes from p-side to n-side region. In other words, “minority carrier” injection happens
on both p-side (in a normal diode (without bias) electrons are a minority on p-side) and n-side (holes
are a minority on n-side) of the diode.
As the voltage level increases, the electrons from n-side gets pushed towards the p-side junction.
Similarly holes from p-side get pushed towards the n-side junction. Now there arises a concentration
gradient between the number of electrons at the p-side junction region and the number of electrons at
the region towards the p-side terminal. A similar concentration gradient develops between the number
of holes at the n-side junction region and the number of holes at region near the n-side terminal. This
results in movement of charge carriers (electrons and holes) from region of higher concentration to
region of lower concentration. This movement of charge carriers inside p-n junction gives rise to
current through the circuit.

Assignment - EEE 103

Uploaded by

Copyright:

Available Formats

Assignment - EEE 103

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Assignment - EEE 103

Uploaded by

Copyright:

Available Formats

ROYAL UNIVERSITY OF DHAKA Fall 2021

Program: B.Sc. (HON’S) in CSE (EVE)

Course Code & Title

 Static I-V Characteristics

 Forward Biased PN Junction Diode characteristics

You might also like