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    Technical Data: NPN High Power Silicon Transistor

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    Gmo Hdez
    This document provides technical specifications for two NPN high power silicon transistor models, the 2N3771 and 2N3772. It lists maximum ratings, electrical characteristics, and safe operating areas for the transistors. Key specifications include collector current ratings of 30A for the 2N3771 and 20A for the 2N3772, as well as breakdown voltages up to 100V. Switching times and gain are also specified under various test conditions.

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    Technical Data: NPN High Power Silicon Transistor

    Uploaded by

    Gmo Hdez
    21 views2 pages
    This document provides technical specifications for two NPN high power silicon transistor models, the 2N3771 and 2N3772. It lists maximum ratings, electrical characteristics, and safe operating areas for the transistors. Key specifications include collector current ratings of 30A for the 2N3771 and 20A for the 2N3772, as well as breakdown voltages up to 100V. Switching times and gain are also specified under various test conditions.

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    2N3772

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    2N3772

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    This document provides technical specifications for two NPN high power silicon transistor models, the 2N3771 and 2N3772. It lists maximum ratings, electrical characteristics, and safe operating areas for the transistors. Key specifications include collector current ratings of 30A for the 2N3771 and 20A for the 2N3772, as well as breakdown voltages up to 100V. Switching times and gain are also specified under various test conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views2 pages

    Technical Data: NPN High Power Silicon Transistor

    Uploaded by

    Gmo Hdez
    This document provides technical specifications for two NPN high power silicon transistor models, the 2N3771 and 2N3772. It lists maximum ratings, electrical characteristics, and safe operating areas for the transistors. Key specifications include collector current ratings of 30A for the 2N3771 and 20A for the 2N3772, as well as breakdown voltages up to 100V. Switching times and gain are also specified under various test conditions.

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    TECHNICAL DATA

    NPN HIGH POWER SILICON TRANSISTOR


    Qualified per MIL-PRF-19500/518

    Devices Qualified Level

    JANTX
    2N3771 2N3772
    JANTXV

    MAXIMUM RATINGS
    Ratings Symbol 2N3771 2N3772 Unit
    Collector-Emitter Voltage VCEO 40 60 Vdc
    Collector-Base Voltage VCBO 50 100 Vdc
    Emitter-Base Voltage VEBO 7.0 7.0 Vdc
    Base Current IB 7.5 5.0 Adc
    Collector Current IC 30 20 Adc
    Total Power Dissipation @ TA = +250C (1) 6.0 W
    PT
    @ TC = +250C (2) 150 W
    Operating & Storage Junction Temperature Range 0
    TJ, Tstg -65 to +200 C TO-3*
    1) Derate linearly 34.2 mW/0C for TA > +250C (TO-204AA)
    2) Derate linearly 857 mW/0C for TC > +250C
    *See Appendix A for
    Package Outline
    ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
    Characteristics Symbol Min. Max. Unit
    OFF CHARACTERISTICS
    Collector-Base Breakdown Voltage
    IC = 200 mAdc 2N3771 V(BR)CEO 40 Vdc
    2N3772 60
    Collector-Emitter Breakdown Voltage
    IC = 200 mAdc, RBE = 100 Ω 2N3771 V(BR)CER 45 Vdc
    2N3772 70
    Collector-Emitter Breakdown Voltage
    IC = 200 mAdc, VBE = -1.5 Vdc 2N3771 V(BR)CEX 50 Vdc
    2N3772 90
    Collector-Emitter Cutoff Current
    VCE = 30 Vdc 2N3771 ICEO 5.0 mAdc
    VCE = 50 Vdc 2N3772 5.0
    Emitter-Base Cutoff Current
    VBE = 7.0 Vdc 2N3771 IEBO 2.0 mAdc
    2N3772
    Collector-Emitter Cutoff Current
    VBE = 1.5 Vdc, VCE = 50 Vdc 2N3771 ICEX 500 µAdc
    VBE = 1.5 Vdc, VCE = 100 Vdc 2N3772 500
    6 Lake Street, Lawrence, MA 01841 120101
    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
    2N3771, 2N3772 JAN SERIES

    ELECTRICAL CHARACTERISTICS (con’t)


    Characteristics Symbol Min. Max. Unit
    ON CHARACTERISTICS (3)
    Forward-Current Transfer Ratio hFE
    IC = 15 Adc, VCE = 4.0 Vdc 2N3771 15 60
    IC = 10 Adc, VCE = 4.0 Vdc 2N3772 15 60
    IC = 1.0 Adc, VCE = 4.0 Vdc Both 40 -
    Collector-Emitter Saturation Voltage VCE(sat)
    IC = 15 Adc, IB = 1.5 Adc 2N3771 1.5
    IC = 30 Adc, IB = 6.0 Adc 2N3771 4.0 Vdc
    IC = 10 Adc, IB = 1.0 Adc 2N3772 1.2
    4.0
    IC = 20 Adc, IB = 4.0 Adc 2N3772
    Base-Emitter Voltage (non-saturated) VBE
    IC = 15 Adc, VCE = 4.0 Vdc 2N3771 2.3 Vdc
    IC = 10 Adc, VCE = 4.0 Vdc 2N3772 2.0
    DYNAMIC CHARACTERISTICS
    Small-Signal Cutoff Frequency 40
    hfe
    IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz
    Magnitude of Common Emitter Small-Signal Short-Circuit 6.0 30
    Forward-Current Transfer hfe
    IC = 1.0 Adc, VCE = 4.0 Vdc, f = 100 kHz
    Output Capacitance 1200
    Cobo pƒ
    VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
    SWITCHING CHARACTERISTICS
    Turn-On Time
    VCC = 30 Vdc; IC = 15 Adc; IB1= 1.5 Adc 2N3771 t
    on 10 µs
    VCC = 30 Vdc; IC = 10 Adc; IB1= 1.0 Adc 2N3772 8.0
    Turn-Off Time
    µs
    t 12
    VCC = 30 Vdc; IC = 15 Adc; IB1 =1.5 Adc; IB2 = -1.5 Adc 2N3771 off
    VCC = 30 Vdc; IC = 10 Adc; IB1 = 1.0 Adc; IB2 = -1.0 Adc 2N3772 10
    SAFE OPERATING AREA
    DC Tests
    TC = +250C, 1 Cycle, t = 1.0 s
    Test 1 (2N3771 only)
    VCE = 5.0 Vdc, IC = 30 Adc
    Test 2 (2N3771 only)
    VCE = 40 Vdc, IC = 3.75 Adc
    Test 3 (2N3772 only)
    VCE = 7.5 Vdc, IC = 20 Adc
    Test 4 (2N3772 only)
    VCE = 60 Vdc, IC = 2.5 Adc
    Clamped Inductive
    TA = +250C; duty cycle ≤ 10%; RS = 0.1 Ω
    Test 1 (2N3771 only)
    RBB1 = 2.0 Ω; VBB1 ≤ 14 Vdc; RBB2 = 100 Ω; VCC = 20±5.0 Vdc; VBB2 = 1.5 Vdc; IC = 30 Adc; RL ≤ 0.67 Ω; L= 5.0 mH
    Test 2 (2N3772 only)
    RBB1 = 2.0 Ω; VBB1 ≤ 10 Vdc; RBB2 = 100 Ω; VCC = 40±5.0 Vdc; VBB2 = 1.5 Vdc; IC = 20 Adc; RL ≤ 2.0 Ω; L= 5.0 mH
    (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

    6 Lake Street, Lawrence, MA 01841 120101


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2

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