Toshiba Discrete Semiconductors

TOSHIBA AMERICA. INC.
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DISCRDE
SEMICONDuaORS
TABLE OF CONTENTS
Pages
1. Product Selection Guides ................................... I-VI
2. Small Signal Transistors ................................... 1- 48

3. Power Transistors 49-283
4. Switching Diodes~ ........................................ 284-298
5. General Purpose Rectifiers ................................. 299 -311
6. Thyristors/PUTs ......................................... 312-328
7. Triacs .................................................. 329-364
8. Surface Mount Devices .................................... 365-404
The information in this guide has been carefully checked and is believed to be reliable, however, no
responsibility can be assumed for inaccuracies that may not have been caught. All information in this
guide is subject to change without prior notice. Furthermore, Toshiba cannot assume responsibility for
the use of any license under the patent rights of Toshiba or any third parties.
PRODUCT INDEX
Small Signal Transistors ~JE13005 .......................... 76
Plastic TO-92 Package ~JEI3006 .......................... 78
2N3903 ............................. 1 ~JEI3007 .......................... 80
2N3904 ............................. 3 ~JE13008 .......................... 82
2N3905 ............................. 7 ~JE13oo9 .......................... 84
2N3906 ............................. 9 TIP29 ............................. 86

2N4123 ............................ 13 TIP29A ............................ 88
2N4124 ............................ 15 TIP29B ............................ 90
2N4125 ............................ 17 TIP29C ............................ 92
2N4126 ............................ 19 TIP30 ............................. 94
2N4400 ............................ 21 TIP30A ............................ 96
2N4401 ............................ 23 TIP30B ............................ 98
2N4402 ............................ 25 TIP30C ........................... 100
2N4403 ............................ 27 TIP31 ............................. 102
2N5400 ............................ 29 TIP31A ........................... 104
2N5401 ............................ 31 TIP31B ........................... 106
2N5550 ............................ 33 TIP31C ........................... 108
2N5551 ............................ 35 TIP32 ............................. 110
~PS2221, ~PS2222 .................. 37 TIP32A ........................... 112
~PS222IA, ~PS2222A ............... 39 TIP32B ........................... 114
~PS2906, ~PS2907 ................. 42 TIP32C ........................... 116
~PS2906A, ~PS2907A ............... 44 TIP4l ............................. 118
~PS-A13, ~PS-AI4 ................ 47 TIP41A ........................... 120
TIP41B ........................... 122
Bipolar Power Transistors TIP41C ........................... 124
~etal TO-3 Package
TIP42 ............................. 126
2N3055 ............................ 49 TIP42A ........................... 128
2N3771 ............................ 51 TIP42B ........................... 130
2N3772 ............................ 53 TIP42C ........................... 132
2N3773 ............................ 55 TIPI20 ............................ 134
2N6546 ............................ 57 TIPI21 ............................ 139
2N6547 ............................ 60 TIPI22 ............................ 144
BU208 ............................. 63 TIPI25 ............................ 149
BU208A ........................... 65 TIPI26 ............................ 154
BUY71 ............................ 68 TIPI27 ............................ 159
Bipolar Power Transistors MOSFET Power Transistors

Plastic TO-220AB Package ~etal TO-3 Package
~JE13002.......................... 70 YTFI50 ........................... 164

~JE13003.......................... 72 YTF151 ........................... 166
WEI3004 .......................... 74 YTFI52 ........................... 168
'YTF153 ........................... 170 YTF611 ........................... 246
YTF220 ........................... 172 YTF612 ........................... 248
,YTF221 ........................... 174 YTF613 ........................... 250
YTF222 ........................... 176 YTF620 ........................... 252
YTF223 ........................... 178 YTF621 ........................... 254
YTF230 ........................... 180 YTF622 ........................... 256
YTF231 ........................... 182 YTF623 ........................... 258
YTF232 ........................... 184 YTF630 ........................... 260
YTF233 ........................... 186 YTF631 ........................... 262
YTF240 ........................... 188 YTF632 ........................... 264
YTF241 ........................... 190 YTF633 ........................... 266
YTF242 ........................... 192 YTF820 ........................... 268
YTF243 ........................... 194 YTF821 ........................... 270
YTF250 ........................... 196 YTF822 ........................... 272
YTF251 ........................... 198 YTF823 ........................... 274
YTF252 ........................... 200 YTF830 ........................... 276
YTF253 ........................... 202 YTF831 ........................... 278
YTF440 ........................... 204 YTF832 ........................... 280
YTF441 ........................... 206 YTF833 ........................... 282
YTF442 ........................... 208
YTF443 ........................... 210
YTF450 ........................... 212 Switching Diodes
YTF451 ........................... 214 Glass DO-35 Package
YTF452 ........................... 216 1N914, 1N194A, 1N914B ............. 284
YTF453 ........................... 218 1N916, 1N916A, 1N916B ............. 286
1N4148 ........................... 288
MOSFET Power Transistors 1N4149 ........................... 290
Metal TO-3 Package
1N4150 ........................... 292
YTF520 ........................... 220 1N4151, 1N4152, 1N4153 ............. 293
YTF521 ........................... 222 1N4154 ........................... 294
YTF522 ........................... 224 1N4446, 1N4447, 1N4448, 1N4449 .... 296
YTF523 ........................... 226 1N4606 ........................... 298
YTF530 ........................... 228
YTF531 ........................... 230
YTF532 ........................... 232 General Purposes Rectifiers
YTF533 ........................... 234 Epoxy Molded DO-41 Package
YTF540 ........................... 236 1N4001-1N4007 .................... 299
YTF541 ........................... 238 1N4001A-1N4007A ................. 301
YTF542 ........................... 240 1N4002B-1N4007B ................. 304
YTF543 ........................... 242 1N5059, 1N5060, 1N5061, 1N5062 ..... 307
YTF610 ........................... 244 1N5624, 1N5625, 1N5626, 1N5627 ..... 310
Thyristors Surface Mount Devices
Plastic TO-202 Package Small Signal Transistors
C106A, C106B, C106D, C106M ....... 312 Plastic SOT -23 Package
T2323B, T2323D, T2323M ........... 315 YTS2221 YTS2222 .................. 365
Plastic TO-220AB Package YTS2221A, YTS2222A .............. 367
YTS2906, YTS2907 ................. 370
C122A, C122B, C122D, C122M ....... 319
YTS2906A, YTS2907A .............. 372
YTS3903 .......................... 375
Plastic TO-92 Package
YTS3904 .......................... 377
C203Y, C203YY, C203A, C203B, YTS3905 .......................... 379
C203C, C203D ..................... 323 YTS3906 .......................... 381
YTS4123 .......................... 383
Programmable Unijunction Transistors
Plastic TO-92 Package YTS4124 .......................... 385
YTS4125 .......................... 387
2N6027, 2N6028 .................... 326
YTS4126 .......................... 389
Triacs YTS4400 .......................... 391
Plastic TO-220AB Package YTS4401 .......................... 393
YTS4402 .......................... 395
2N6346A, 2N6347A, 2N6348A ........ 329
YTS4403 .......................... 397
2N6395, 2N6396, 2N6397, 2N6398 .... 333
2N6401, 2N6402, 2N6403, 2N6404 .... 337
Switching Diodes
MAC222A-4, MAC222A-6, Leadless Glass Package
MAC222A-8 ...................... 341
DLN914, DLN914A, DLN914B ........ 399
T2500B, T2500D, T2500M ........... 345
DLN4148 .......................... 401
Plastic TO-92 Package DLN4446, DLN4447, DLN4448,
MAC94A-4, MAC94A-6 ............ 349 DLN4449 ......................... 403
MAC95-4, MAC95-6 ............... 353
Fast-On Terminal Package

MAC515-4, MAC515-6,
MAC515-8 ........................ 357
MAC525-4, MAC525-6,
MAC525-8 ........................ 361
European Standard Devices*
Small Signal Transistors Power Transistors
Plastic TO-92 Package Plastic TO-126 Package
TBC327, TBC328 BD135 (NP), BD139 (NP), BD139 (NP)
TBC546-TBC548 BD233 (NP), BD235 (NP), BD237 (NP)
TBC556-TBC558 BF469 (NP), BF471 (NP)
TBC559, TBC560 BF470 (NP), BF472 (NP)
BF422, BF423
Plastic SOT-23MOD Package
BCW29, BCW30
BCW31-BCW33
BCW60A-BCW60D
BCW61A-BCW61C
BCW69, BCW70
BCW71 , BCWn
BCX70G-BCX70K
BCX7IG-BCX71J
BAS16
BAV99
BAW56
*Contact nearest Toshiba America Sales office for specification information.

PRODUCT SELECTION GUIDE
TRANSISTOR - BIPOLAR
TO-3 CAN PACKAGE SERIES
~
(V)
VCEO
10 15 16 20 30
2N3773
40 2N4398
2N5301
2N3713 2N3055 2N3772 2N4399

2N3715 2N5302
60
2N3789
2N3791
75 2N5039
2N3714 2N5303
2N3716
80 2N3790
2N3792
90 2N5038
140 2N3773
200 2N6249
275 2N6250
300 2N6546
350 2N6251
400 2N6547
TO-220AB PACKAGE SERIES
~
VCEO (V)
1-1.5 3-4 5 6-8 10-12
TIP29 TIP31 TIP41

40 TIP30 TIP32 TIP42
TIP29A TIP31A TIP120 TIP41 A TSB140*

60 TIP30A TIP32A TIP125 TIP42A TSB145*
TIP29B TIP31B TIP121 TIP41B TSB141*

80 TIP30B TIP32B TIP126 TIP42B TSB146*
TIP29C TIP31C TIP122 TIP41C TSB142*

100
TIP30C TIP32C TIP127 TIP42C TSB147*
MJE13002 MJE13004 MJE13006 MJE13008

300
(TO-126)
MJE13003 MJE13005 MJE13007 MJE13009

400
(TO-126)
*TSBxxx EQUIVALENT TO TIPxxx SERIES. TO-3P (BS) PACKAGE

TO-92MOD PACKAGE SERIES
~)
V (V)
CEO
200 500 600 800
2N4124
25
2N4126
2N4123 MPS-A13
30
2N4125 MPS-A14
2N3903 2N4400 MPS2222

2N3904 2N4401 MPS2222A
40
2N3905 2N4402
2N3906 2N4403
MPS2907
60
MPS2907A
120 2N5400
150 2N5401
160 2N5550
MPS-A43 2N5551
200
MPS-A93
MPS-A42
300
MPS-A92
ii
TRANSISTOR - POWER MOS FET
TO-3 CAN PACKAGE SERIES
~)
10 (A) 60 100 150 200 450 500
4 YTF223 TYF222
5 YTF221 YTF220
7 YTF443 YTF442
8 YTF233 YTF232 YTF441 YTF440
9 YTF231 YTF230
12 YTF453 YTF452
13 YTF451 YTF450
33 YTF153 YTF152
40 YTF151 YTF150
TRANSISTOR - POWER MOS FET

TO-220AB PACKAGE SERIES
~)
10 (A) 60 100 450 500
2 YTF823 YTF822
2.5 YTF821 YTF820
4 YTF833 YTF832
4.5 YTF831 YTF830

13 YTF451 YTF450
14 YTF531 YTF530
24 YTF543 YTF542
27 YTF541 YTF540
33 YTF153 YTF152
40 YTF151 YTF150
iii
GENERAL RECTIFIER
IF(AV) (A) 1.0 3.0
~
VRRM (V) 00-41 00-415 00-4155 Glass Glass
50 1N4001 1N4001A - - -
100 1N4002 1N4002A 1N4002B - -
200 1N4003 1N4003A - 1N5059 1N5624
400 1N4004 1N4004A 1N4003B 1N5060 1N5625
600 1N4005 1N4005A 1N4005B 1N5061 1N5626
800 1N4006 1N4006A - 1N5062 1N5627
1000 1N4007 1N4007A 1N4007B - -
DIODE
~)
Vr(V) 150 200
1N4152
25 (30)
1N4154
1N4151 1N4150
50
1N4153
1N4606
70 1N4607
1N4608
1N914,A,B
1N916,A,B
1N4148
75 1N4149
1N4446
1N4447
1N4448
1N4449
iv
TRIGGER DEVICES
TYPE 2N6027 2N6028
PACKAGE TO-92
*1 2fJA MAX 0.1S ....A MAX

U)
Ip
(J *11 S....A MAX 1.0fJA MAX
~
U)
if *1 0.2-1.6 V 0.2-0.6 V
w
I- VT
(J
cr:
a:
*11 0.2-0.6 V 0.2-0.6 V
cr:
::t:
(J *1 SO ....A MAX 2S ....A MAX
Iv
*11 70fJA MIN 2S ....A MIN
*1: RG=1M!l
*11: RG=10K!l
THYRISTOR
"tYpe High-sensitivity Thyristor General Purpose Thyristor
IT(RMs) (A) .10.8 4 8 12 16
PACKAGE T0-92 TO-202 TO-220AB
30 V C203Y
-100 V
60 V C203YY
- - - -
100 V C203A C106A C122A 2N639S 2N6401
200 V C2038 C1068 C1228 2N6396 2N6402
300 V C203C
400 V C106D C122D 2N6397 2N6403
400 V C203D
600 V - C106M C122M 2N6398 2N6404
*1. Center pin gate type
TRIAC
PACKAGE TO-92 TO-202 TO-220AB T0-3 FAST ON
(Center pin gate)
~
VDRM(V)
200
.10.8
MAC94A-4
.20.8
MAC9S-4
2.5
T23238
.16.0
T2S008
.18.0
MAC222A-4
.112.0
2N6346A
16.0
MACS15-4
25.0
MAC52S-4
400 MAC94A-6 MAC9S-6 T2323D T2S00D MAC222A-6 2N6347A MACS15-6 MACS2S-6
600 - - T2323M T2500M MAC222A-8 2N6348A MAC51S-8 MAC52S-8
*1. 4 mode trigger type

*2. High-sensitivity trigger type
v
SURFACE MOUNT DEVICE
TRANSISTOR & DIODE
TRANSISTOR
SUPER MINI TYPE (SOT-23)
~
V (V)
CEO
200 600
25 YTS4126
YTS4123 YTS2222
30 YTS4124
YTS4125
YTS3903 YTS2222A
YTS3904 YTS2907
40
YTS3905 YTS4400
YTS3906 YTS4401
YTS4402
YTS4403
60 YTS2907A
LEAD LESS DIODE
~
V (V)
R
450 600
25 DLN4154
30 DLN4152
DLN4151 DLN4150
50
DLN4153
DLN4607
70
DLN4608
DLN4148
DLN4149
DLN4446
DLN4447
75 DLN4448
DLN4449
DLN914,A,B
DLN916,A,B
vi
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR 2N3903
TECHNICAL DATA SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SHITO:ING ArID AI1PLIFIER Unit in mm
APPLICATIONS. 5.1 MAX
1 ..
<
FF.ATURES:
(145
..
:0;
r-
Low Leakage Current

1\----4 ~l rz:
I
(155MAX.
ICEV=50nA(Max.), IBEV=-50nA(Max.)
~,
~l
d ~
r-
@ VCE=30V, VBE=-3V •
...
o!
Excellent DC Current Gain Linearity

Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @ IC=50mA, IB=5rnA
Low Collector Output Capacitance
: Cob=4pF(Max.) @ VCB=5V
Complementary to 2N3905
L EMITTER
2. BASE
3. COLLECTOR
.rEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1F
f1Axmurl RATINGS (Ta=25°C) Weight: 0.21g

CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
* 40 V
'*' Collector-Emitter Voltage VCEO
, Emitter-Base Voltage VEBO 6 V
* Collector Current 200 rnA
IC
*
Base Current IB 50 rnA
Collector Power Dissipation 625 mW
(Ta=25°C) Derate Linearly 25°C Pc
5.0 mW/oC
Collector Power Dissipation 1.5 W
(Tc=25°C) Derate Linearly 25°C PC
12 mW/oC
Thermal Resistance 200
Rth(j-a) °C/W
(Junction to Ambient)
Thermal Resistance
Rth(j-c) 83.3 °C/W
(Junction to Ca~e)
Junction Temperature Tj 150 °c
*
Storage Temperature Range Tstg -55-150 °c
*
*In accordance with JEDEC registration data.
The information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA for any infringements of patents or other
rights of the third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA CORPORATION
-1-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
, Collector Cut-off Current ICEV VCE=30V, VBE--3V - - 50 nA
*31<, Base Cut-off Current IBEV VCE=30V, VBE--3V - - -50 nA
Collector-Base
* Breakdown Voltage V(BR)CBO IC=l()PA, IE=O 60 - - V
Collector-Emitter
Breakdown Voltage V(BR) CEO IC=lmA, IB=O 40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOJ£A, IC=O 6 - - V
hFE(l) VCE=lV, IC=O.lmA 20 - -
hFE(2) VCE=lV, IC=lmA 35 - -
. DC Current Gain hFE(3) VCE=lV, IC=lOmA 50 - 150
hFE(4) VCE=lV, IC=50mA 30 - -
hFE(5) VCE=lV, Ic=lOilmA 15 - -
Collector-Emitter VCE(sat)l IC=lDmA, .IB=lmA - - 0.2 V
Saturation Voltage
VCE(sat)2 IC=5DmA, IB=5mA - - 0.3
Base-Emitter
Saturation Voltage
VBE(sat)l IC=lOmA, IB=lmA 0.65 - 0.85
V
VBE(sat)2 IC=50mA, IB=5mA - - 0.95
VCE=2·0V, IC=lOmA
. Transi tion Frequency fT f=lOOMHz
250 - - MHz
Collector Output Capacitance
* Input Cob VCB=5V, IE=O, f=lMHz - - 4 pF
'" Input Capacitance Cib VEB=O. 5V, IC=O, f-lMHz - - 8 pF
'" VoltageImpedance hie 0.5 - 8 kO

Feedback Ratio hre VCE=lOV, IC=lmA 0.1 - 5 xlO- 4
'" Small-Signal Current Gain hfe f=lkHz 50 - 200
'" Collector Output 1 - 40 /lS
'" Noise Figure Admittance NF
hoe
VCE=5V, IC=O.lmA
- - 6 dB
Rg=lkO, f=lOHz -15. 7kHz
10kO
Delay Time td Yin ~t, VOUT
~ • Ctotal<3pll'
- - 35
10.9n
300D8 ... ...
VCc=3.0V
Rise Time tr -0.5 - --0
t r ,tf<1ns, Du=2'!'>
- - 35
Switching Time ns
10kO vOUT
Storage Time tstg
ViD
IN916 ,..~t +CW~l<'Pll' -
I
- 175
or equi ... tit
20/le
Fall Time tf 10.9n_ 0
-IH
vCc=3.0V
t r. tf<l DB. Du=ll'!'>
- - 50
TOBHIBA CORPORATION
-2-
TOSHIBA TRANSISTOR
FOil GENERAL PURPOSE USE SIHTCHING Arm A~'PLIFlm Unit in mm

APPLICATIONS. 5.1I4AX.
x<
FEATURES: ::01
...~
Low Leakage Current 0.45
ICEV=SOnA(Max.). IBEV=-SOnA(Max.) 0.5514AX. '"is
@ VCE=30V. VBE=-3V 0.45 II ~
...
: VCE(sat)=0.3V(Max.) @ IC=SOmA. IB=SrnA L27 L27

: Co b=4pF(Max.) @ VCB=SV
L EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ SO-43
TOSHIBA 2-5FIF
tlAXHlUrl RATINGS (Ta=2S0C) Weight: 0.2lg
'* Collector-Base Voltage VCBO 60 V
'* Collector-Emitter Voltage VCEO 40 V
'* Emitter-Base Voltage VEBO 6 V
Collector Current 200 rnA
'" Base Current
IC
IB SO rnA
, Collector Power Dissipation 625 mW
(Ta=2S0C) Derate Linearly 25°C Pc
5.0 mW/oC
(Tc=2S0C) Derate Linearly 25°C Pc
12 mW/"C
Thermal Resistance
Rth(j-a) 200 °C/W
Thermal Resistance
Rth{j-c) 83.3 °C/W
(Junction to Case)
'* Junction Temperature Tj ISO °c
Storage Temperature Range Tstg -55-ISO °c
'" "'In accordance with JEDEC registration data.
or otherwise under any patent or patent rights of TOSHIBA or others. TOBHIBA CORPORATION
-3-
TECHNICAL DATA

r.ollector Cut-off Current ICEV VCE=30V, VBE=-3V - - 50 nA
* Base Cut-off Current IBEV VCE=30V, VBE=-3V - - -50 nA

· r.ollector-Base
* ~reakdown Voltage V(BR)CBO IC=lOpA, IE=O 60 - - V
Lollector-Emitter
Breakdown Voltage V(BR) CEO IC=lmA, IB=O 40 - - V
· Emitter-Base
'" Breakdown Voltage V(BR)EBO IE=lOpA, IC=O 6 - - V

· DC Current Gain VCE=lV, IC=lOmA 100 - 300
'" hFE(3)
hFE(5) VCE=lV, IC=lOOmA 30 - -
·~ollector-Emitter IC=lOmA, .IB=lmA - - 0.2
'"~aturation Voltage
VCE(sat)l
VCE(sat)2 IC=50mA, IB=5mA - - 0.3
V
· ~ase-Emitter
~aturation Voltage
VBE(sat)l IC=lOmA, IB=lmA 0.65 - 0.85
V
VCE=20V, IC=lOmA
.~ransition Frequency fT f=lOOMHz
300 - - MHz
~ollector
* ~nput Output Capacitanc~ Cob VCB=5V, IE=O, f=lMHz - - 4 pF
Capacitance VEB=O. 5V, IC=O, f=lMHz - - 8 pF
'" ~nput Impedance Cib
hie 1.0 - 10 k{1
'"
'~oltage Feedback Ratio h re VCE=lOV, IC=lmA 0.5 - 8 XIO-4
'" ~mall-Signal Current Gain hfe f=lkHz 100 - 400
'"
·~ollector Output Admittance 1.0 - 40 pS
* hoe
VCE=5V, IC=O.lmA
'~oise
'" Figure NF
Rg=lkO, f=lOHz -15. 7kHz - - 5 dB
lOk{1 C vOUT
Delay Time td Yin
~t ~Ctotal<~PF - - 35
10.91 00no <0 II.
Vcc=5.0V
Rise Time tr -0.5V
'[1,0 - - 35
· Switching Time tr tr<lne, Du = 2'!I> ns
'"
Storage Time tstg VinlN916
'''" ~_.
~ TCto1Al<~PF
'00' - - 200
or equi v. <0 '"
Fall Time tf 10.9Vi-i.

-QIV.
___ 0 vcc=5.0V
t r •t1'<lna. Du=2'!1>
- - 50
'" In accordance with JEDEC registration data.
TOSHIBA CORPORATION
-4-
TOSHIBA SEMICONDUCTOR
2N3904
TECHNICAL DATA
Ie - VCE hFE - Ic
100 ,..-------"'T""-.----,r---r:,..., 1000
Oil
COMMON EMITTER
500
""
.c
300
Ta 125"{; VCE - 1 V
20· ~
~
..:
-55
...'"z 100
Oil
50
''""
:::> 30 ~
" ~
"
A
10
0.1 0.30.5 1 3 5 10 3050 100 300
COLLECTOR CURRENT IC (rnA)
z VCE(sat) - IC
OE-~ _ _L_~_L_~_-L_~~
g 1
... ~ COMMON EMITTER
o 2 4 ..:>
~ ...... 0.5
COLLECTOR-EMITTER VOLTAGE VCE (v) IC/IB 10
~ __ 0.3
~
'"gj~"" Ta = 125"{;
... Oil 0.1
...H>"
~ 0.05
" 25
~ 0.03 -55
... OiI
COMMON EMITTER
I "'"
Oil":
j ~ 0.01
0.30.5 1 II "
IJ I
VCE = 1 v g~ 0.1 3 5 10 30 50 100 300
COLLECTOR CURRENT IC (rnA)
0
I
H
"
... 120 III
~ I 10
VBE(sat) - IC
'"
:::>
" 80 JII COMMON EMITTER
5 Ie/IE 10
'...o" ,.IV 3
~
III11 1
.;!J~71~I
Ta = -05'·~"1
'o"' 40
~
" 0.5
, 25
o 1IJ U 0.3 125
o 0.4 0.8
BASE-EMITTER VOLTAGE
1.2
VBE (v)
1.6
0.1
0.1 0.30.5 1 3 5 10
III 30 50 100 300
COLLECTOR CURRENT IC (mA)
TOSHIBA CORPORATION
-5-
TECHNICAL DATA
50
II II 30
f
Ta
1Ml1"
= 25t
l-
l-
"
...:
....II
...
II
0
e
1\
l"""- .... e
to
e
e
....
';';:
""""
~~
00
1>1>
o .~
10
Cn>
~ 5
,....:
0
:3
~
0
C;; l-
...:
p,
t-- r-
2 ...: 1
0
OOIlllON
f'. f'.
EIIITTE!I
Ta=25t
IIW '" 0.5
0.1 0.:3 0.5 1 :3 :; 10 30
0.01 0.1 1 10
REVERSE VOLTAGE VCB (V)
BASE CURRENT IB (rnA)
VEB (V)
Pc - Ta
E 2.0
rJ] 0:. Tc = Ta
INFINITE HEAT SINK
(g,
to- - NO HEAT SINK
(J;;
"-
["'--.
" r--.
~ r- I"'-.. ~
r- t---
,....'" r- ~
25 50 "15 100 125 150
AMBIENT TEMPERATURE Ta (t)
TOSHIBA CORPORATION
-6-
TOSHIBA TRANSISTOR
TECHNICAL DATA SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE S~JITCHING AND A~lPLIFIER Unit in mm

APPLICATIONS. 5.1llAX
FEATURES:
T .
><
:E
~
Low Leakage Current (145
'1---4 ~ .
I I ~ ~....
ICEV=-50nA(Max.), IBEV=50nA(Max.) 1l55MAX
@ VCE=-30V, VBE=3V .£!.L ' , 0;

: VCE(sat)=-0.4V(Max.) @ IC=-5OmA, IB=-5mA
: Cob=4.5pF(Max.) @ VCB=-5V
L EMITTER
2. BASE
3. COLLECTOR
:!EDEC TO-92
EIAJ SC-43
TOSHIBA 2-5FIF
MAXIMurl RATINGS (Ta=25°C) Weight: 0.2lg

Collector-Base Voltage -40 V
* Collector-Emitter Voltage
VCBO
-40 V
VCEO
* V
Emitter-Base Voltage VEBO -5
* Collector Current IC -200 rnA
* rnA
Base Current IB -50
5.0 mW/oC
(Tc=25°C) Detate Linearly 25°C Pc
12 ml4/oC
Thermal Resistance
(Junction to Ambient) Rth(j-a) 200 °C/W
. Thermal Resistance
Rth(j-c) 83.3 °C/W
(Junction to Case)
Storage Temperature Range Tstg -55 -150 °c
*In Accordance with JEDEC registration data.
-7-
TECHNICAL DATA

· Collector Cut-off Current ICEV VCE=-30V, VBE=3V - - -50 nA
Base Cut-off Current IBEV VCE=-30V, VBE=3V - - 50 nA
· Collector-Base
Breakdown VoltaRe V(BR)CBO IC=-lOJjA, IE=O -40 - - V
· Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-lmA, IB=O -40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOJjA, IC=O -5 - - V
hFE(l) VCE=-lV, IC=-O.lmA 30 - -

hFE(2) VCE=-lV, IC=-lmA 40 - -
· DC Current Gain hFE(3) VCE=-lV, IC=-lOmA 50 - 150
hFE(4) VCE=-lV, IC=-50mA 30 - -
hFE(5) VCE=-lV, IC=-lOOmA 15 - -
· Collector-Emitter VCE(sat)l IC=-lOmA,. IB=-lmA - - -0.25
V
Saturation Voltage VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4
Base-Emitter VBE(sat)l IC=-lOmA, IB=-lmA -0.65 - -0.85
V
Saturation Voltage IC=-50mA, IB=-5mA - - -0.95
VBE(sat)2
VCE=-20V, IC=-lOmA
· Transition Frequency fT f=lOOMHz
200 - - MHz
Collector Output Capacitance Cob VCB=-5V, I~O, f=lMHz - - 4.5 pF

Input Capacitance Cib ¥~i-0.5V, IC-O - - 10 pF
f= MHz
Input Impedance hie 0.5 - 8 kO
Voltage ·Feedback Ratio hre VCE=-lOV, IC=-lmA 0.1 - 5 xlO- 4
Small-Signal Current Gain fife f=lkHz 50 - 200
Collector Output Admittance hoe 1.0 - 40 JjS
VCE=-5V, IC=-O.lmA
Noise Fi!'iure NF
Rg=lkO, f=lOHz -15. 7kHz - - 5 dB
~VOUT - -
Delay Time td(ON) v in
.
01)
I
,
'" Ctotal<4.pF
35
a.5~ .. m
Rise Time tr !-1a.6V
-- . vcc=-3.0V
tr. tf'<ln. - - 35
:SOOn. Du=2'}'o ns
· Switching Time
Storage Time tstg
'~~i. + '00'
lD lN916
or equiv. ~ '"
Ctotal <4.pF
- - 200
Q1V VCc=-3.0V
Fall Time tf la.9V
-- 0
)1'.
t r • tf' <In.
Du=2'}'o
- - 60
In accordance ,...i.th J":DEC registration data.
TOSHISA CORPORATION
-8-
TOSHIBA TRANSISTOR
Unit in mm
FOR GENERAL PURPOSE USE SIlITCHING AND AMPLIFIER
5.11lAX
APPLICATIONS.
! ><
~
FEATURES: ...
l':
0.45
Low Leakage Current
ICEV=-SOnA(Max.), IBEV=SOnA(Max.)
0.551lAX. 1\---4 ~ ,i
0.45
I "ll
d ;&t-
@ VCE=-30V. VBE=3V o ~
L27 L27
: VCE(sat)=-0.4V(Max.) @ IC=-SOmA, IB=-SrnA
: Cob=4.SpF(Max.) @ VCB=-SV
L EIIlITTER
2. BASE
3. COLLECTOR
J"EDEC TO-92
EIAJ" 8C-43
TOSHIBA 2-5 F1F
~1Axmur·' RATINGS (Ta=2S0C) Weight: O.2lg

'" Collector-Emitter Voltage
VCBO
VCEO -40 V
'" Emitter-Base Voltage -S V
'" Collector Current
VEBO
-200 rnA
'" Base Current
IC
IB -SO rnA
Collector Power Dissipation 62S m\~
(Ta=2S0C) Derate Linearly 2SoC Pc
S.O mW/DC
Collector Power Dissipation loS W
(Tc=2S DC) Derate Linearly 2SoC Pc
12 mW/oC
Thermal Resistance
Rth(j-a) 200 °cN
Thermal Resistance 83.3
Rth(j-c) °C/W
(Junction to Case)
Junction Temperature ISO °c
'" Storage Temperature Range -SS -ISO
Tj
·C
'" "'In accordance with JEDEC registration
Tstg
data.
TOSHIBA CORPORATION
or otherwise under any patent or patent rights of TOSHIBA or others.
-9-
TECHNICAL DATA

Collector Cut-off Current
* Base Cut-off Current ICEV VCE=-30V. VBE=3V - - -50 nA
* Collector-Base IBEV VCE=-'30V. VBE=3V - - 50 nA
* Breakdown Volta2e V(BR)CBO IC=-lOpA. IE=O -40 - - V

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-lmA. IB=O -40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOJtA. IC=O -5 - - V
hFE(l) VCE=-lV. IC=-O.lmA 60 - -

hFE(2) VCE=-lV. IC=-lmA 80 - -
· DC Current Gain hFE(3) VCE=-lV. IC=-lOmA 100 - 300
hFE(4) VCE=-lV. IC=-50mA 60 - -
hFE(5) VCE=-lV. IC=-lOOmA 30 - -
· Collector-Emitter VCE(sat)1 IC=-lOmA., IB=-lmA - - -0.25
V
Saturation Voltage
VCE(sat)2 IC=-50mA. IB=-5mA - - -0.4
Base-Emitter
Saturation Voltage
VBE(sat)l IC=-lOmA. IB=-lmA -0.65 - -0.85 V
VBE(sat)2 IC=-50mA. IB=-5mA - - -0.95
VCE=-20V. IC=-lOmA
; Transition Frequency fT f=lOOMHz
250 - - MHz
Collector Output Capacitance Cob Vc!i=-5V. IE=O. f=lMHz - - 4.5 pF

Input Capacitance Cih VEB=-0.5V.IC=0. f=lMHz - - 10 pF
Input Impedance hie 2.0 - 12 kO
Voltage Feedback Ratio h re VCE=-lOV. IC=-lmA 1.0 - 10 xlO-4
Small-Signal Current Gain hfe f=lkHz 100 - 400
· Collector Output Admittance hoe 3.0 - 60 pS
VCE=-5V. IC=-O.lmA
Noise Figure NF
Rg=lkO. f=lOHz -15. 7kHz - - 4 dB
Delay Time td Vin~VOUT - - 35

~ lCtotal<4PF
o.5VU '" vcc=-3.0V
Rise Time tr -lo.SV tr,tr<lns
300ns DIl=2%
- - 35
Switching Time ns
lOkO VOUT
Storage Time tstg Yin
lN916 ~i +C tota1 <4PF - - 225
pr equiv. 1;; '"
9.1V~o voo=-3.0V
Fall Time tf -lo.9V t r , tr<lns - - 75
Ops DIl=2%
* In ,ccorJance with JEDEC registration data.
TOSHIBA CORPORATION'
-10-
SEMICONDUCTOR
TOSHIBA TECHNICAL DATA 2N3906
IC - VCE hFE - IC
-100
z: V...-
-0.0
I---
~
1000
COMMON EMITTER
VCE -IV
~~~ ~ Ta 125'C
~ -80
.....- .
,! ~ ./ ~
- 0.6
- E:
o 100
25
-55
~~
o ~ - 0.5
fi()
H
-60 30
V !---
0.4
I o
i§ -40
~I-- ~ - 0.3 10
-0.1 - 0.3 -1 -3 10
COLLECTOR CURRENT
- - 30
IC (mA)
- 100 - 300
... r/~ - 0.2
~ I
H
o -20
o
V- IB=-o,lmA
/" COMMON EMITTER

Ta = 25'C
z VCE(sat) - IC
~ -;1.
o
o -1 -2 -3 -4 ... COMMON EMITTER
~>
p ........ -0.5
COLLECTOR-EMITTER VOLTAGE VCE (V) IC/IB 10
:;; - 0.3
~
r.o~
I.e,
gj : -9),.9.~
~ ~ -0.1 ott>
iii;;
, -0.05 F=
f'~25 f--
i§ -0.03 r-- -55 I--
... 01
00
-200
COMMON EMITTER I
01 ..
~ ~ - 0.01
00 -ell -0.3 -1 -3-10 -30 -100
Hili -300
0;>
VCE= -IV COLLECTOR CURRENT IC (mA)
,-... -160
,!
o
H
-120
~ VBE(sat) - IC
i
o ~>
-10
-5
COMMON EMITTER
'" -80 ... '-' Ic/IB 10
...o ~ -; -3
SJ
~ '"
... ~
.. m
'" Ta--05'C
H
8 -40
ijj
t: ~ 'J
00 ';;
~.:-
...~ fiI
-1
-0.0
-0.3 1\.25
'.
125
J)J .....
010
- - 1.2
"
-0.4 0.8 - 1.6 en H -0. 1
~~ -0.1 -0.3 - -3 -10 - 30 -100 300
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)
TOSHIBA CORPORATION
-11-
2N3906
TECHNICAL DATA
£ -LO
f'1
0
II II 11111 f z: 1 MHz
Ta- 21i"C
I>
-U8 II II 11111
- ~ c- o
.... 0
0
=
0
to .... .c .c 10 COb
- rl
11
o 0'"
0
- :; f'1 Ii --
II
.
o
z
'"
H
3
Cib
~
o
II
OOIlMON
.
~
o 1
EMITTER
Ta = 25"C U5
- U1 -U3 -1 -3 -10 -30
- U01 U1 - -10
BASE CURRENT REVERCE VOLTAGE VCB (V)
VEB (V)
Pc - Ta
<Ii Tc:&: Ta
INFINITE HEAT SINK
~ L6 @ NO HEAT SINK
H
- -
S
'" L2
,~
~
'"
H
~
"- ........
UB
- -"-
t:'i
~ r- "-
®
~ U4-
i;.l
r- ........
:.'ol 0 r--..: ~
o 0 100 125 75
AMBIENT TEMPERATURE Ta ("C)
TOSHIBA CORPORATION
-12-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR 2N4l23
Unit in mm
FOR GENERAL PURPOSE USE SIHTCHING AND M1PLIFIER
5.114AX.
APPLICATIONS.
! I ..;i
FEATURES: ...
r:
0.45
i i~~~
Low Leakage Current
0.55MAX.
~l "
ICBOE50nA(Max.) @ VCB=20V
IEBO=50nA(Max.) @ VEB=3V ~ o 0
d r0-
o!
....
...'"d
: Cob-4pF(Max.) @ VCB=5V
1. E14ITTER
2. BASE
3. COLLECTOR
J"EDEC TO-92
EIAJ" SC-43
TOSHIBA 2-51"11"
t~XIMUM RATINGS (Ta=25"C) Weight: 0.21g

'" Collector-Base Voltage

Collector-Emitter Voltage
VCBO 40
30 V
V
'" Emitter-Base Voltage VCEO

5 V
* Collector Current VEBO
200 rnA
'" Base Current IC
IB 50 rnA
Collector Power Dissipation 625
* (Ta-25"C) Derate Linearly 25"C l'C
5.0
mW
mW/"C
(Tc-25"C) Derate Linearly 25"C Pc
12 mW/"C
Thermal Reisstance
Rth(j-a) 200 "C/W
Thermal Resistance
* (Junction to Case) Rth(j-c) 83.3 "C/W
. Junction Temperature "C
'". Storage Temperature Range Tj 150
"C
'" "'In accordance with JEDEC registration
Tstg
data.
-55-150
- I3-
TECHNICAL DATA

: Collector Cut-off Current ICBO VCB=20V, IE=O - - 50 nA
, Emitter Cut-off Current lEBO VEB=3V, IC=O - - 50 nA
i Collector-Base
Breakdown Voltage V(BR)CBO IC=lOJlA, IE=O 40 - - V
, Collector-Emitter
Breakdown Voltage V(BR)CEO IC=lmA, IB=O 30 - - V
· Emitter-Base
Breakdown Voltage V(BR)EBO IE=l OJlA, IC=O 5 - - V
: DC Current Gain hFE(l) VCE=lV, IC=2mA 50 - 150

Saturation Voltage VCE(sat) IC=50mA, IB=5mA - - 0.3 V
· Base-Emitter
* Saturation Voltage VBE(sat) IC=50mA, IB=5mA - - 0.95 V
· Small Signal Forward
* Current Transfer Ratio I hfel VCE=20V, IC=lOmA,
f=lOOMHz
2.5 - -
: Transition Frequency fT VCE=20V, IC=lOmA
f=lOOMHz
250 - - MHz
*· Collector Output Capacitance Cob VCB=5V, IE=O, f=lMHz - - 4 pF
*· Input Capacitance Cib VEB=0.5V, IC=O, f=lMHz - - 8 pF

Small Siganl Current Gain hfe VCE=lOV, IC= 2mA , f=lkHz 50 - 200
VCE=5V, IC=lOOJlA,
· Noise Figure NF
- - 6 dB
TOSHIBA CORPORATION
-14-
TOSHIBA TRANSISTOR
Unit in mm
FOR GENERAL PURPOSE USE S~lITCHING AIID At~PLlFIER
5.1I1AX.
APPLICATIONS. I
><
.....
~
FEATURES:
0.45
Low Leakage Current ",.
0.55MAX.
ICBO=50nA(Max.) @VCB=20V H
:oi
0.45
IEBo=50nA(Max.) @ VEB=3V ~
....
L27 L27
Complementary to 2N4l26
1. EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5FIF
t1AXH1UM RATINGS (Ta=25°C) Weight: 0.2lg

Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 rnA
5.0 mW/"C
(Tc=25°C) Derate Linearly 25°C Pc
12 mW/oC
. Thermal Resistance
Rth(j-a) 200 °C/W
Thermal Reisstance
Rth(j-c) 83.3 °C/W
(Junction to Case)
TOSHIBA CORPORATION
-15-
SEMICONDUCTOR
TOSHIBA 2N4124
TECHNICAL DATA

*· Collector Cut-off Current ICBO VCB=20V, IE=O - - 50 nA

Emitter Cut-off Current VEB=3V, IC=O - - 50 nA
'"
· Collector-Base
lEBO
* Breakdwon Voltage V(BR)CBO IC=lCJl.oA, IE=O 30 - - V
* Breakdown Voltage V(BR) CEO IC=lmA, IB=O 25 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=l OJlA, IC=O 5 - - V
hFE(l) VCE=lV, IC=2mA 120 - 360

* DC Current Gain hFE(2) VCE=lV, IC=50mA 60 - -
*· Collector-Emi tter
· Base-Emitter
* Saturation Voltage VBE(sat) IC=50mA, IB=5mA - - 0.95 V
· Small Signal Forward VCE=20V, IC=lOmA,
* Current Transfer Ratio Ihfe l
f=lOOMHz
3.0 - -
VCE=20V, IC=lOmA,
- - MHz
*· Transition Frequency fT
f=lOOMHz
300
VCB=5V, IE=O, f=1MHz - - 4 pF

'"· Collector Output Capacitance
Input Capacitance
Cob
VEB=O. 5V, IC=O, f=1MHz - - 8 pF
'" Small Signal Current Gain
Cib
hfe VCE=10V, IC=2mA, f=lkHz 120 - 480
* VCE=5V, IC=100JlA
Noise Figure NF
Rg=1kO, f=lOHz -15. 7kHz
- - 5 dB
* In accordance with JEDEC registration data.
TOBHIBA CORPORATION
-16-
TOSHIBA TRANSISTOR
FOR GErlERAL PURPOSE USE SI!ITCHIrlG Arm ArlPLlFIER Unit in DUn
APPLICATIONS. f>.1I1AX.
I
,.,.<><
FEATURES: ...
Luw Leakage Current
-z:...
ICBo=-50nA(Max.) @ VCB=-20V ,.
IEBO=-50nA(Max.) @ VEB=-3V ~
....
: VCE(sat)=-0.4V(Max.) @ IC=-5OmA, IB=-5mA
1.27 1.27
Low Collector Output Capacitance on
: Co b=4.5pF(Max.) @ VCB=-5V
•d
1. EMITTER
2. BASE
3. COLLECTOR
.rEDEC TO-92
EIAJ 8C-4.3
TOSHIBA 2-5F1F
MAXIMurl RATINGS (Ta=25°C) Weight: 0.21g

Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -30 V
, Emitter-Base Voltage VEBO -4 V
;
Collector Current Ie -200 mA
Base Current IB -50 mA
5.0 mW/"C
(Tc=25°C) Derate Linearly 25°C Pc
12 mW/oC
i Thermal Resistance 200 °C/W
(Junction to Ambient) Rth(j-a)
Thermal Resistance 83.3 °C/W
(.Junction to Case) Rth(j-c)
TOSHIBA CORPORATION
-17 -
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2S0C)

lie Collector Cut-off Current ICBO VCB=-20V, IE=O - - -SO nA
· Emitter Cut-off Current
* Collector-Base lEBO VEB=-3V, IC=O - - -SO
. nA
Breakdown Voltage V(BR)CBO IC=-lOI'A, IE=O -30 - - V

Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOI'A, IC=O -4 - - V
· DC Current Gain hFE(l) VCE=-lV, IC=-2mA SO - ISO

hFE(2) VCE=-lV, IC=-SOmA 2S - -
* Collector-Emitter
Saturation Voltage VCE(sat) IC=-SOmA, IB=-SmA - - -0.4 V
· Base-Emitter
Saturation Voltage VBE(sat) IC=-SOmA, IB=-SmA - - -0.9S V
*· Current
Small Signal Forward
Transfer Ratio Ihfe I
VCE=-20V, IC=-lOmA,
f=lOOMHz
2.0 - -
VCE=-20V, IC=-lOmA,
· Transi tion Frequency fT
f=lOOMHz
200 - - MHz
*lie Collector Output Capacitance Cob VCB=-SV, IE=O, f=lMHz - - 4.S pF

Input Capacitance Cib VEB=-O.SV, IC=O, f=lMHz - - 10 pF
lie· Small Signal Current Gain hfe VCE=-lOV, IC=-2mA,f=lkHz SO - 200
VCE=-SV, IC=-lOOl'A
*· Noise Figure NF
Rg=lkn, f=lOHz -IS. 7kHz
- - S dB
TOSHIBA CORPORATION
-18-
TOSHIBA TRANSISTOR
FOR GENERAL PURPOSE USE SWITCHING ArID AtlPLlFIER Unit in DUD
APPLICATIONS. 5.114AX
I ..
~
FEATURES:
:;;
Low Leakage Curre~ U45
ICBO=-SOnA(Max.)
IEBO=-SOnA(Max.)
@ VCBz-20V
@ VEB=-3V
U5 51lAX.
~.
11~~ll
....
: VCE(sat)=-0.4V(Max.) @ IC=-SOmA, IB=-SmA
: Cob-4.SpF(Max.) @ VCB=-SV
Complementary to 2N4l24
1. EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1F
MAXIMUt1 RATINGS (Ta=2S0C) Weight: 0.2lg

Collector-Base Voltage VCBO -2S V
*
Collector-Emitter Voltage -2S V
* Emitter-Base Voltage
VCEO
-4 V
VEBO
*
Collector Current IC -200 mA
*
Base Current IB -SO mA
Collector Power Dissipation 62S mW
(Ta=2S0C) Derate Linearly 2SoC Pc
S.O mW/DC
Collector Power Dissipation loS W
(Tc=2S0C) Derate Linearly 2S DC Pc
12 mW/DC
Thermal Resistance DC/W
(Junction to Ambient) Rth(j-a) 200
Thermal Resistance ·C/W
(Junction to Case) Rth(j-c) 83.3
lSO DC
* Junction Temperature
Storage Temperature Range Tstll
T1
-SS -lSO ·C
* *In accordance with JEDEC registration data.
TOSHIBA CORPORATION
-19-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2S·C)

, Cut-off Current
Colle~tor
* Emitter Cut-off ICBO VCB--20V, IE-O - - -50 nA
* Collector-Base Current lEBO VEB=-3V, IC=O - - -50 nA
* Breakdown Voltage V(BR)CBO IC=-lOpA, IE=O -25 - - V

, Collector-Emitter
RreakdownVoltage V(BR)CEO IC=-lmA, IB=O -25 - - V
Emitter-Base
Breakdown Voltage V(RR)EBO IE=-lOpA, IC=O -4 - - V
DC Current Gain hFE(l) VCE=-lV, IC=-2mA 120 - 360

hFE(2) VCE=-lV, IC=-SOmA 60 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC=-SOmA, IR=-SmA - - -0.4 V
Base-Ent! tter
Saturation Voltage VBE(sat) IC=-SOmA, IR=-SmA - - -0.95 V
VCE=-20V, IC=-lOmA,
Current Transfer Ratio hfe
f=lOOMHz
2.5 - -
VCE=-20V, IC=-lOmA,
Transition Frequency fT
f=lOOMHz
250 - - MHz
Collector Output Capacitance Cob VCB=-SV,IE=O, f=IMHz - - 4.5 pF

Input Capacitance Cib VER=-O. SV, IC=O, f=lMHz - - 10 pF
Small Signal Current Gain hfe VCE=-lOV, IC=-2mA,f=lkHz 120 - 480
Noise Figure NF VCE=-SV, IC=-100pA

- - 4 dB
TOSHIBA CDRPORATIDN
-20-
TOSHIBA TRANSISTOR
FOR GENERAL PURPOSE USE SIJITCHING ArID M1PLIFIER Unit in DIm
APPLICATIONS. 5.114AX
! .....
~
FEATURES:
oJ
Low Leakage Current (l45
ICEy=lOOnA(Max.), IBEV=-lOOnA(Max.) I 'rl ~z

,I ~1 ~
0.5514AX
@ VCE=3SV, VBE=-0.4V Q..45

: VCE(sat)=0.4V(Max.) @ IC=lSOmA, IB=lSmA
: Cobz6.5pF(Max.) @ VCB=SV
L EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5FIF
MAXIMU~l RATINGS (Ta=25°C) Weight: 0.2lg

Collector-Base Voltage 60 V
'" Collector-Emitter Voltage VCBO
VCEO 40 V
'" Emitter-Base Voltage VEBO 6 V
'" Base Current
IC 600
100
mA
IB mA
Collector Power Dissipation mW
'" (Ta m 2S·C) Derate Linearly 2S·C Pc 625
5.0 mW/oC
W
'" Collector Power Dissipation
(Tc=2S0C) Derate Linearly 2S·C Pc
loS
12 mW/oC
Thermal Resistance
'" Thermal
(Junction to Ambient) Rth(j-a) 200 ·C/W
'" (JunctionResistance
to Case) Rth(j-c) 83.3 ·C/W
·C
* Junction Temperature
Storage Temperature Range
Tj ISO
·C
-5S-lS0
* "'In accordance with JEDEC Tstg
registration data.
TOSHIBA CORPORATION
-21-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UN}
*'· Collector Cut-off Current ICEV VCE=35V, VBE--0.4V - - 100 nil.
*'.· Base Cut-off Current IBEV VCE=35V, VBE~-0.4V - - -100 nA

;I< Collector-Base
Breakdown Voltage V(BR)CBO IC=O.lmA, IE=O 60 - - V
. Collector-Emitter
· Emitter-Base
Breakdown Voltage V(BR)EBO IE=O.lmA, IC=O 6 - - V
hFE(l) VCE=lV, IC=lmA 20 - -

·DC Current Gain hFE(2) VCE=lV, IC=lOmA 40 - -
hFE(3) VCE=lV, IC=150mA 50 - 150
hFE(4) VCE=2V, IC=500mA 20 - - --
'Collector-Emitter
Saturation Voltage
VCE(sat)1 IC=150mA, IB-l5mA - - 0.4 \;
VCE(sat)2 IC=500mA, IB-50mA - - 0.75
· Base-Emi t ter VBE(sat)1 IC=150mA, IB=15mA 0.75 - 0.95 V
Saturation Voltage
VCE=lOV, IC=20mA
Transition Frequency fT 200 - - MHz
f=lOOMHz
Collector Output Capacitance Cob VCB=5V, IE=O, f=lMHz - - 6.5 pF
· Input Capacitance
'"· Input Impedance Cib VEB=0.5V, IC=O, fzlMHz - - 30 pF
'" tage Feedback Ratio hie 0.5 - 7.5 kG
'"·· Vol hre VCE=lOV, IC=lmA 0.1 - 8 xlo-4
*· Small-Signal Current Gain hfe f=lkHz 20 - 250
'" Collector Output Admittance hoe 1.0 - 30 liS

lkO VOUT
Delay Time td "in
~i ,+CtOtal<l np!" - - 15
~ ... tr(scopa)<4.ns
201'0
Vcc=30V
Rise Time tr 16~fl·0 - - 20
-2V
t r <2ns, Du ~2%
· Switching Time ns
lkO vOUT
Storage Time tstg ~in
VBB=-4V
~f fCtotal <lOp!"
~ ,j,t r (ocopa)<4.no
- - 225
VCC=30V
Fall Time tf ~s
16VR tf<20ns
- - 30
-14.V- --0 Du52%
TOaHIBA CORPORATION
- 22-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR 2N440l
Unit in mm
FOR GENERAL PURPOSE USE SHITCHING ArID AMPLIFIER
5.1 MAX
APPLICATIONS.
! ><
::i
FEATURES: ~
Low Leakage Current (l45
ICEV=lOOnA(Max.), IBEv=-lOOnA(Max.) (l55MAX. iH~lz

@ VCE=35V, VBE=-0.4V
(l45 I , "l1 '"r:51
d
...
: VCE(sat)=0.4V(Max.) @ IC=150mA, IB=15mA
: Cob=6.5pF(Max.) @ VCB=5V
1. EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1F
Weight: 0.2lg
- DC)
MAXIt1UM RATINGS (Ta-25
*
*
* Collector Current
Base Current
IC
IB
600
100
rnA
rnA
(Ta=25 DC) Derate Linearly 25 DC Pc
5.0 mW/DC
(Tc=25 DC) Detate Linearly 25 DC Pc mW/DC
12
i (Jun"rion ro Amhi .. nr' Rth(j-a) 200
(Junction to Case) Rth(j-c) 83.3
Junction Temperature 150 DC
* Tj
DC
-55 -150
* Storage Temperature Range Tstg
or otherwise under any patent or patent rights of TOSHIBA or others. TCSHIBA CORPORATION
-23-
TECHNICAL DATA

Collector Cut-off Current ICEV VCE=3SV, VBE=-0.4V _. - 100 nA
. Base Cut-off Current IBEV VCE=3SV, VBE=-0.4V - - -100 nA
. Collector-Base
Collector-Emitter
.. Emitter-Base
Breakdown Voltage V(BR)EBO IE=O.lmA, IC=O 6 - - V
. DC Current Gain hFE(3) VCE=lV, IC=lOmA 80 - -
hFE(4) VCE=lV, IC=lSOmA 100 .- 300
hFE(S) VCE=2V, IC=SOOmA 40 - -
Collector-Emitter
Saturation Voltage
VCE(sat)l IC=lSOmA,. IB-lSmA - - 0.4 V
VCE(sat)2 IC=SOOmA, IB-SOmA - - 0.7S
Base-Emitter VBE(sat)l IC=lSOmA, IB=lSmA 0.7S - 0.9S
V
Saturation Voltage
VBE(sat)2 IC=SOOmA, IB=SOmA - - 1.2
VCE=lOV, IC=20mA
f=lOOMHz
2S0 - - MHz
Collector Output Capacitance Cob VCB=SV, IE=O, f-lMHz - - 6.S pF

Input Capacitance Cib VEB=O. SV, IC=O, f-lMHz - - 30 pF
Input Impedance hie 1.0 - IS kn
VCE=lOV, IC-lmA
Voltage Feedback Ratio hre
f=lkHz
0.1 - 8 xlO-4
Small-Signal Current Gain hfe 40 - SOO
Collector Output Admittance hoe 1.0 - 30 I'S
Delay Time td ~VOUT - - IS

in ~ +Ctotal<lOPP
20l'B "'tr(IICOpB)<4.na
VCC=30V
Rise Time tr _1;J1.0 - - 20
Switching Time t r <2ns, Du~2% ns
lk c::
Storage Time tstg iv1n VOUT
~i ,*Ctotal<lOPP - - 22S
"'t r (scope)<4.nB
"BB=-'
Fall Time tf l6V ft

20l'B VcC=30V
t <2008
-l4.V· • ·0 ~$2""
- - 30
TOSHIBA CORPORATION
-24-
TOSHIBA TRANSISTOR
TECHNICAL DATA
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
Unit in mm
FOR GEtlERAL PURPOSE USE SIJITCIfI NG ArID At1PLI FI ER
APPLICATIONS.
! ..
FEATURES: .
~
..;
Cl45
Low Leakage Current
Cl55MAX.
.H~r~·
ICEv=-lOOnA(Max.). IBEv=lOOnA(Max.)
@ VCE=-35V, VBE=0.4V
Cl45 I ~l ~....
1.27 L27
: VCE(sat)=-0.4V(Max.) @ IC=-150mA, IB=-15mA '"d•
: Cob-8.5pF(Max.) @ VCB=-lOV
Complementary to 2N4400 L EIIlITTER
2. BASE
:l. COLLECTOR
;rEDEC TO-92
EIAJ 6C-43
TOSHIBA 2-5F1F
MAXIMUM RATINGS (Ta=25·C) Weight: 0.2lg

'" Collector-ElIIitter Voltage
VCBO
-40 V
'" Emitter-Base Voltage
VCEO
-5 V
VEBO
IC -600 mA
* Base Current IB -100 mA

* (Ta-25·C) Derate Linearly 25·C Pc
5.0 mW/"C
* (Tc-25·C) Detate Linearly 25·C Pc
12 mW/·C
Thermal Resistance
* (Junction to Ambient) Rth(j-a) 200 ·c/w
Thermal Resistance
* (Junction to Case) Rth(j-c) 83.3 ·c/u
·C
* Junction Temperature Tj
-55-150
150
·C
Storage Temperature Range
* *In accordance with JEDEC
Tstg
registration data.
TOSHIBA CORPORATION
-25-
2N4402
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2s0C)

* Base Cut-off Current ICEV VCE=-3sV, VBE-0.4V - - -100 nA
* Collector-Base IBEV VCE=-3sV, VBE O.4V E

- - 100 nA
* Breakdown Voltalle V(BR)CBO IC=-O.lmA, IE=O -40 - - V

Collector-Emitter
* Breakdown Voltage V(BR)CEO IC=-lmA, 18"0 -40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-O.lmA, IC=O -5 - - V
hFE(l) VCE=-lV, IC=-lmA 30 - -

hFE(2) VCE=-lV, IC=-lOmA 50 - -
* DC Current Gain
'" hFE(3) VCE=-2V, IC=-lsOmA 50 - 150
hFE(4) VCE=-2V, IC=-sOOmA 20 - -
Collector-Emitter VCE(sat)l IC=-lsOmA, IB~-lsmA - - -0.4 V
Saturation Voltage
VCE(sat)2 IC=-sOOmA, IBc-sOmA - - -0.75
VBE(sat)l IC=-lsOmA, IB=-lsmA -0.75 - -0.95
* Base-Emitter
Saturation Voltage VBE(sat)2 IC=-sOOmA, IB=-sOmA - - -1.3
V
VCE=-lOV, IC=-20mA
* Transition Frequency fT
f=lOOMHz
150 - - MHz
* Collector Output Capacitance Cob VCB=-lOV, IE=O, f=lMHz - - 8.5 pF

Input Capacitance
* Input Impedance Cib VEB=-O.SV, IC=O, f=UDlz - - 30 pF
'" Voltage Feedback Ratio hie 0.75 - 7.5 kO

VCE=-lOV, IC=-lmA
h re 0.1 - 8 xlO-4
'" Small-Signal Current Gain hfe
f=lkHz
30 - 250
* 1.0 - 100
* Collector Output Admittance hoe I'S
Delay Time td
"in
lkO
11:'
o VOUT
+CtOta1<lOpJl'
- - 15
~ '" t r (scope)<4-na
2VU-0 VCC=-30V
Rise Time tr -16V tr<2nB
20l'B Du;;;2%
- - 20
Switching Time ns
Storage Time tstg ~1nv~~r+Ctotal<WpP
o
VOUT - - 225
VBB=~v g ,j,tr(B~ope)<~nB
avU VCC=-30V
Fall Time tf
-16V
o
tf<2llnB
- - 30
20l'B Du:;!;2%
TOBHIBA CORPORATION.
-26-
TOSHIBA SEMICONDUCTOR TOSHIBA TRANSISTOR
TECHNICAL DATA 2N4403
Unit in mm
FOR GENERAL PURPOSE USE SHITCHIIIG AND AMPLI FIER
5.1Io1AX.
APPLICATIONS.
! '"
;!
FEATURES: ..."
Q45
Low Leakage Current
Q55MAX. IIf-! ~I"
I ~1 ~
ICEV=-lOOnA(Max.), IBEV=IOOnA(Max.)
@ VCE=-35V, VBE=0.4V ~.
~ -;
1.27 1.27
: VCE(sat)=-0.4V(Max.) @ IC=-150mA, IB=-15rnA
~l I!
~I...
! !
V ••
!
: Cob=8.5pF(Max.) @ VCB=-IOV 23
1. EMITTER
2. BASE
3. COLLECTOR
J EDEC TO-92
EIAJ SC-43
TOSHIBA 2-5F1F
t·1AXIr·1U~1 RATINGS (Ta=25°C) We1ght 0.21g

Collector-Base Voltage
* Collector-Emitter Voltage VCBO -40
-40
V
V
* VCEO
Emitter-Base Voltage -5 V
* VEBO
Collector Current IC -600 rnA
*
Base Current IB -100 rnA
* (Ta=25°C) Derate Linearly 25°C Pc
5.0 mWoC
* (Tc=25°C) Derate Linearly 25°C Pc
12 mW/oC
* IThermal Resistance
(Junction to Ambient) Rth(j-a) 200 °C/W
Thermal Resistance
* (Junction to Case) Rth(j-c) 83.3 °C/W
* Storage Temperature Range Tstg -55 -150 °c
*
-27-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAlL UNIT
* Collector Cut-off Current ICEV VCE=-35V, VBE=0.4V -100 nA
'" Base Cut-off Current IBEV VCE=-35V, VBE=0.4V 100 nA
* Collector-Base
V(BR)CBO IC=-O.lmA, IE=O -40 - V
Breakdown Voltage
* Collector-Emitter
V(BR)CEO IC=-lmA, IB=O -40 - V
Breakdown Voltage
'" Emitter-Base -5
Breakdown Voltage V(BR)EBO IE=-O.lmA, IC=O - V
hFE(l) VCE=-lV, IC=-O.lmA 30

hFE(2) VCE=-lV, IC=-lmA 60
* DC Current Gain hFE(3) ,vCE=-lV, IC=-lOmA 100
* hFE(4) VCE=-2V, IC=-150mA 100 300
hFE(5) VCE=-2V, IC=-500mA 20
* Collector-Emitter VCE(sat)l IC=-150mA, IB--15mA -0.4 V
Saturation Voltage
VCE(sat)2 -0.75
'" Base-Emitter VBE(sat)l IC=-150mA, IB=-15mA -0.75 -0.95
V
Saturation Voltage -1.3
VBE(sat)2 IC=-500mA, IB=-50mA
VCE=-lOV, IC=-20mA 200 MHz
'" Transition Frequency
f=lOOMHz
* Collector Output Capacitance Cob VCB=-lOV, IE=O, f=lMHz 8.5 pF
* Input Capacitance Cib VEB=-0.5V,IC=O, f=lMHz 30 pF
* Input Impedance hie 1.5 15 kO
* Voltage Feedback Ratio h re
VCE=-lOV, IC=-lmA 0.1 8 xlO- 4
* Small-Signal Current Gain hfe
f=lkHz 60 500
* Collector Output Admittance hoe 1.0 1001'S
Delay Time Vin lkO elJ1 VOUT

Ctotal <lOp!'
15
~ l tr (BCOpe)<4.ns
~-----------+--------~ 2V VCC=-30V ~--~-----+----~
* Switching
Rise Time tr -16UOt r <2ns
Time~__________-+________-+____2_0~I'_B__
D_U~~_~2~%________-+____
20
-r____+-__--i ns
no VOUT
Storage Time tstg in ~!+Ctotal<lOP!' 225
~__________-+________~ VBB=4.V ~~"'tr(Bcnpe)<'nB ~__~____-+____~
Fall Time
-~::UO t:r:::
20l's Du:;;;2%
OV 30
TOSHIBA CORPORATION
-28-
TOSHIBA TRANSISTOR
FOR GENERAL PURPOSE USE HIGH VOLTAGE Unit in mm

AMPLIFIER APPLlCATIOfJS. 5.11lAX
I I
...~
FEATURES:
High Collector Breakdown Voltage
..
:E
":
0.45
,1----+ ~l .
~T ~
VCBO=-130V, VCEO=-120V 0.5511AX.
Low Leakage Current 0.45

I d t-
o!
rl
: ICBO=-lOOnA(Max.) @ VCB=-lOOV ~
: VCE(sat)=-0.5V(Max.) @ IC=-50mA, IB=-5mA
Low Noise: NF=8dB(Max.)
L EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ 8C-43
TOSHIBA 2-5FIF
~lAXIMur~ RATINGS (Ta=25°C) Weight: 0.2lg

Emitter-Base Voltage VEBO -5 V
5.0 mW;oC
Pc
(Tc=25°C) Derate Linearly 25°C mW/oC
12
Thermal Resistance °C/W
Rth(j-a) 200
Thermal Resistance °C/W
Rth(j-c) 83.3
(Junction to Case)
* Storage Temperature Range Tstg -55 -150 °c
*
TOSHIBA CORPORATION
-29-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO

VCB=-lOOV, IE-O - - -100 nA
VCB=-lOOV, IE-O,Ta-lOO°C - - -100 p.A
*',
Emitter Cut-off Current lEBO VEB=-3V, IC-O - - -50 nA
iii Collector-Base
Breakdown Voltage V(BR)CBO IC=-O.lmA, IE-O -130 - - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOp.A, IC=O -5 - - V
hFE(l) VCE=-5V, IC=-lmA 30 - -
DC Current Gain hFE(2) VCE=-:-5V, IC=-lOmA 40 - 180
hFE(3) VCE=-5V, IC=-50mA 40 - -
;
Collector-Emitter
Saturation Voltage
VCE(sat) 1 IC=-lDrnA, IB=-lmA - - -0.2 V
VCE(sat) 2 IC=-50mA, IB=-5mA - - -0.5
Base-Emitter
Saturation Voltage
VBE(sat) 1 IC=-lOmA, IB=-lmA - - -1.0 V
VBE(sat) 2 IC-~50mA, IB=-5mA - - -1.0
VCE--lOV, IC=-lOmA,
f-lOOMHz
100 - 400 MHz
* Collector Output Capacitance Cob VCB--lOV, IE-O, f=lMHz - - 6 pF
*
Small Siganl Current Gain hfe VCE--lOV,IC--lmA,f=lkHz 30 - 200
VCE--5V, IC--250p.A
Noise Figure NF
Rg-lkO, f-lOHz -15. 7kHz
- - 8 dB
TOSHIBA CORPORATION
-30-
TOSHIBA TRANSISTOR
FOR GENERAL PURPOSE USE HIGH VOLTAGE Unit in mrn

A"PLIFIER APPLICATIOtIS. 5.1 MAX.
1 ><
:i
FEATURES:
"
.;
High Collector Breakdown Voltage Cl45
'H~I",
~1 ~
Cl55J4AX.
: VCBO=-160V, VCEO=-lSOV
Low Leakage Current ~ II o-i
: ICBO=-SOnA(Max.) @ VCB=-120V ~
~~
: VCE(sat)=-O.SV(Max.) @ IC=-SOmA, IB=-SrnA
d •
Low Noise: NF=8dB(Max.) , .j.. ~
1 2 3 o-i
.;
1. EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ 8C-43
TOSHIBA 2-5F1F
We1ght 0.21g
r~AXIMur1 -
RATINGS (Ta-2S0C)
* Collector-Base Voltage
VCBO -160
-150
V
V
VCEO
*
* Collector Current IC -600 rnA
* Base Current IB -100 rnA
Collector Power Dissipation 625 rnW
* (Ta-2s0C) Derate Linearly 25°C Pc
5.0 mW/oC
* (Tc-2s·C) Derate Linearly 2S·C Pc
12 mW/·C
Thermal Resistance
* (Junction to Ambient) Rth(j-a) 200 ·C/W
Thermal Resistance
* (Junction to Case) Rth(j-c) 83.3 ·cN
Junction Temperature Tj 150 ·C
* ·C
Storage Temp.erature Range -55-150
* *In Tstg
accordance with JEDEC registration data.
- 31-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNI1

VCB=-120V, IE=O - - -50 nA
VCB=-120V,IE=O, Ta=lOO°C - - -50 itA
". Emitter Cut-off Current lEBO VEB=-3V, IC=O - - -50 nA
, Collector-Base
*' Breakdown Voltage V(BR)CBO IC=-O.lmA, IE=O -160 - - V
Collector-Emitter
Emitter-Base
* Breakdown Voltage V(BR)EBO IE=-lOItA, IC=O -5 - - V
hFE(l) VCE=-5V, IC=-lmA 50 - -

DC Current Gain hFE(2) VCE=-5V, IC=-lOmA 60 - 240
hFE(3) VCE=-5V, IC=-50mA 50 - -
Collector-Emitter
Saturation Voltage
VCE(sat) 1 IC=-lOmA, IB=-lmA - - -0.2 V
VCE(sat) 2 IC=-50mA, IB=-5mA - - -0.5
* Base-Emitter
Saturation Voltage
VBE(sat) 1 IC=-lOmA, IB=-lmA - - -1.0 V
VBE(sat) 2 IC=-50mA, IB=-5mA - - -1.0
Transition Frequency fT VCE=-lOV, IC=-lOmA,

f=lOOMHz
100 - 300 MHz
* Collector Output Capacitance Cob VCB=-lOV, IE=O, f=lMHz - - 6 pF

Small Siganl Current Gain hfe VCE=-lOV, IC=-lmA, f=lkHz 40 - 200
VCE=-5V, IC=-250ItA
Noise Figure NF
- - 8 dB
TOBHI_ CORPORATION
-32-
TOSHIBA TRANSISTOR
FOR GENERAL PURPOSE USE HIGH VOLTAGE Unit in mm

AtlPLIFIER APPLIC/'.TIOflS. 1i.lI4AX
! ><
~
FEATURES:
......
VCBO=160V, VCEO=140V
Cl45
Cl55J4AX. jri~1 ~.;~

d ...
Low Leakage Current Cl45
• oj
....
: ICBO=lOOnA(Max.) @ VCB=lOOV
: VCE(sat)-0.25V(Max.) @ IC=50mA, IB-5rnA
Low Noise: NF-IOdB(Max.)
L EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ 8C-4.3
TOSHIBA 2-:lFlF
rlAXI~lurl RATIrlGS (Ta=25°C) Weight: 0.218

* 140
Collector-Emitter Voltage VCEO V
* V
Emitter-Base Voltage 6
* VEBO
* Base Current IB 100 rnA
* (Ta-25°C) Derate Linearly 25°C Pc
5.0 mWoC
* (Tc-25°C) Derate Linearly 25°C Pc
12 rnW/oC
Thermal Resistance
* (Junction to Ambient) Rth(j-a) 200 °C/W
Thermal Resistance
* (Junction to Case) Rth(j-c) 83.3 °C/W

* Storage Temperature Range -55-150 ·C
* Tsts
-33-
TECHNICAL DATA

VCB=lOOV, IE=O - - 100 nA
VCB=lOOV, IE=O, Ta=lOO·C - - 100 IlA
Emitter Cut-off Current lEBO VEB=4V, IC=O - - SO nA
* Collector-Base
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOIlA, IC=O 6 - - V
hFE(l) VCE=SV, IC=lmA 60 - -

. DC Current Gain
;& hFE(2) VCE=SV, IC=lOmA 60 - 2S0
hFE(3) VCE=SV, IC=SOmA 20 - -
: Collector-Emitter
Saturation Voltage
VCE(sat) 1 IC=lOmA, IB=lmA - - O.lS V
VCE(sat) 2 IC=50mA, IB=5mA - - 0.2S
Base-Emitter
Saturation Voltage
VBE(sat) 1 IC=lOmA, IB=lmA - - 1.0 V
VBE(sat) 2 IC=SOmA, IB=SmA - - 1.2
VCE=lOV, IC=lOmA,
f=10OMHz
100 - 300 MHz
* Collector Output Capacitance Cob VCB=lOV, IE=O, f=lMHz - - 6 pF

Input Capacitance Cib VEB=O.SV, IC=O, f=lMHz - - 30 pF
*
'" Small Signal Current Gain hfe VCE=lOV,IC=lmA, f=lkHz SO - 200
'" Noise Figure NF VCE=SV, IC=2S0IlA

Rg=lkO, f=loHz -IS. 7kHz
- - 10 dB
;& In accordance with JEDEC registration data.
TOSHIBA CORPORATION
-34-
TOSHIBA TRANSISTOR
Unit in mm
FOR GENERAL PURPOSE USE HIGH VOLTAGE
Af·1PLIFIER APPLICATIONS. 5.1I11AX.
><
FEATURES: ...'"
::;
.;
!l46
VCBO=180V, VCEO=160V U66111AX. 1r--4~l ~ ,~.
Low Leakage Current ~, I ,d ~
.-<
: ICBO=50nA(~lax.) @ VCB=120V
1.27 1.27
~1
~l
Low Noise: NF=8dB(Max.) iTT
"",oil
T
~ 23
L EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
EIAJ SC-43
TOSHIBA 2-6F1F
We1ght 0.21g
t·1AXUMl RATINGS (Ta=25 DC)
CHARACTERISTIC SYtfBOL RATING UNIT
*
* V
Emitter-Base Voltage VEBO 6
* Collector Current 600 rnA
IC
*
* (Ta=25 DC) Detate Linearly 25 DC Pc
mW/DC
5.0
(Tc=25 DC) Derate Linearly 25 DC Pc
12 mW/DC
Thermal Resistance
'* (Junction to Ambient) Rth(j-a) 200 DC/W
Thermal Resistance 83.3 DC/W
(Junction to Case) Rth(j-c)
Junction Temperature Tj ISO DC
"" Storage Temperature Range Tstg -55 -150 DC
*
-35-
TECHNICAL DATA


VCB=120V. IE=O - - SO nA
VCB=120V. IE=O. Ta=lOO°C - - SO IJA
Emitter Cut-off Current lEBO VEB=4V. IC=O - - SO nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=O.lmA. IE=O 180 - - V
Collector-Emitter
Emi tter-Base
Breakdown Voltage V(BR)EBO IE=lO.uA, IC=O 6 - - V
hFE(l) VCE=SV, IC=lmA 80 - -

DC Current Gain hFE(2) VCE=SV, IC=lOmA 80 - 2S0
hFE(3) VCE=SV, IC=SOmA 30 - -
Collector-Emitter VCE(sat) 1 IC=lOmA, IB=lmA - - O.lS
V
Saturation Voltage
VCE(sat) 2 IC=SOmA, IB=SmA - - 0.2
* Base-Emitter VBE(sat) 1 IC=lOmA, IB=lmA - - 1.0 V

Saturation Voltage
VBE(sat) 2 IC=SOmA, IB=SmA - - 1.0
VCE=lOV. IC=lOmA,
Transition Frequency fT f=lOOMHz
100 - 300 MHz
* Collector Output Capacitance Cob VCB=lOV, IE=O, f=lMHz - - 6 pF
* Input Capacitance Cib VEB=O.SV, IC=O, f=lMHz - - 20 pF

Small Signal Current Gain hfe VCE=lOV, IC=lmA, f=lkHz SO - 200
*
Figure VCE=SV. IC=2SQ.aA - - 8 dB
* Noise NF
Rg=lkO, f=lOHz -IS. 7kHz
TOSHISA CORPORATION
- 36-
TOSHIBA TANSISTOR
TOSHIBA SEMICONDUCTOR MPS2221. MPS2222
FOR GENERAL PURPOSE USE Unit in nun

MEDIUM-SPEED SWITCHING AND AUDIO TO
5.lMAX· 1
VHF FREQUENCY APPLICATION. I
><
~
FEATURES: .
".
DC Current Gain Specified : 0.1- 500rnA

1\---4 ~ i
n
Low Collector-Emitter Saturation Voltage 0.55MAX.
: VCE(sat)=1.6V(Max.) @ IC=500rnA 0.45 I , ~r d ~

'"z-;
rl
High Transition Frequency

: @ IC=20rnA, fT=250MHz (Min.)
Complementary to MPS2906, MPS2907.
."' l.27 L27
III
~1
d
l 2 3
l. EMITTER
2. BASE
3. OOLLECTOR
MAXIMUtl RATINGS (Ta=25°C)
JEDEO TO 92
CHARACTERISTIC SYMHOL RATING UNIT EIAJ SO-43
Collector-Base Voltage VCBO 60 V TOSHIBA 2-5FlF
Collector-Emitter Voltage VCEO 30 V Weight :0.2lg

Total Device Dissipation
@ Ta=25°C Pc 625 mW
Derate above 25°C 5.0 mW/oC

@ Tc=25°C Pc 1.5 W
Derate above 25°C 12 mW/"C

Storage Temperature Range Tstg -55- 150 °c
-37-
TOSHIBA SEMICONDUCTOR MPS2221, MPS2222
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25°C, Unless otherwise noted)

MPS2Z21 MPS2222
CHARACTERISTIC SYMBOL TEST CONDITION UNIT
MIN. MAX. MIN. MAX.
Collector Cut-off Current ICBO VCB=50V, IE=O - 10 - 10 nA

Collector Cut-off Current ICBO VCB=50V, ' IE=O, Ta=150°C - 10 - 10 itA
Emitter Cut-off Current lEBO VEB=3V, IC=O - 10 - 10 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=lOltA, IE=O 60 - 60 V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC=lOmA, IB=O 30 - 30 - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOJtA, IC=O 5 - 5 - V
VCE=lOV, IC=O.lmA LO - 35 -
VCE=lOV, IC=1.OmA 25 - 50 -
VCE=lOV, IC=lOmA 35 - 75 -
DC Current Gain hFE VCE=lOV, IC=150mA 40 120 100 300
VCE=lOV, IC=500mA 20 - 30 -
VCE=lV, IC=150mA 20 - 50 -
VCE-lOV, IC-lOmA
Ta=-55°C
15 - 35 -
Collector-Emitter IC=150mA, IB=15mA - 0.4 - 0.4
V
Saturation Voltage VCE(sat)
IC=500mA, IB=50mA - 1.6 - 1.6
Base-Emitter IC=150mA, IB=15mA 0.6 2.0 - 1.3
V
VBE(sat)
Saturation Voltage IC=500mA, IB=50mA - 2.6 - 2.6
Transition Frequency fT VCE=20V, IC=20mA,f=100MHz 250 - 250 - MHz
~<?l~e",tor uutput
Capac~tance Cob VCB=lOV, IE=O, f=lOOkHz - 8.0 - 8.0 pF
Input Capacitance Cib VEB=0.5V, IC=O, f=lOOkHz - 30 - 30 pF
TOSHISA CORPORATION
-38-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR MPS2221A. MPS2222A
FOR GENERAL PURPOSE USE Unit in mm

5.1 lAAY
VHF FREQUENCY APPLICATION. I
FEATURES: .~
',----I- ~ '"
DC Current Gain Specified : 0.1-500mA U45
~l ~
n ~ "IAV
Low Collector-Emitter Saturation Voltage
: VCE(sat)=l.OV(Max.) @ IC=500mA
U45 II rl

: @ IC=20mA MPS222lA ; 250MHz(Min.)
.
..
1.27 1.27
MPS2222A ; 300MHz(Min.) '"d
Complementary to MPS2906A, MPS2907A. ..!
1 2 3
! I
~1
1. EMITTER
2. BASE
3. COLLECTOR
JEDEC TO-92
MAXIrlUr1 RATINGS (Ta=25°C) EIAJ SC 43
CHARACTERISTIC SYMBOL RATING UNIT TOSHIBA 2-5FIF
Collector-Base Voltage VCBO 75 V Weight : O.2lg

@ Tc=25°C Pc 625 mW
Derate above .25°C 5.0 mW/oC

@ Ta=25°C Pc 1.5 W
Derate above 12 mW/·C

- 39-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25°C, Unless otherwise noted)

MPS2221A MPS2222A
MIN. MAX. MIN. MAX.
Collector Cut-off Current ICBO VCB=60V, IE=O - 10 - 10 nA
Collector' Cut-off Current ICBO VCB=60V, IE=O, Ta=150°C - 10 - 10 itA
Collector Cut-off Current ICEX VCE=60V, VBE=-3V - 10 - 10 nA
Emitter Cut-off Current lEBO VEB=3.0V, IC=O - 10 - 10 nA
Base Cut-off Current IBL VCE=60V, VBE=-3V - 20 - 20 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=lOltA, IE=O 75 - 75 - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOltA, IC=O 6.0 - 6.0 - V
VCE=lOV, IC=O.lmA 20 - 35 -
VCE=lOV, IC=1.OmA 25 - 50 -
VCE=lOV, IC=lOmA 35 - 75 -
VCE=lOV, IC=500mA 25 - 40 -
VCE=lV, IC=150mA 20 - 50 -
VCE=lOV, IC=lOmA
Ta=-55°C
15 - 35 -
Collector-Emitter
VCE(sat)
IC=150mA, IB=15mA - 0.3 - 0.3
V
Saturation Voltage
IC=500mA, IB=50mA - 1.0 - 1.0
Base-Emitter IC=150mA, IB=15mA 0.6 1.2 0.6 1.2
VBE(sat) V
Saturation Voltage
IC=500mA, IB=50mA - 2.0 - 2.0
Transition Frequency fT VCE=20V, IC=20mA,f=100MHz 250 - 300 - MHz
I~olle~torOutput Cob VCB=lOV, IE=O, f=lOOkHz - 8.0 - 8.0 pF
Capac~tance
Input Capacitance Cib VEB=0.5V, IC=O, f=lOOkHz - 25 - 25 pF

Collector-Base VCB=20V, IE=20mA
Time Constant Cc,rbb' f=3l.8MHz - 150 - 150 pS
Noise Figure NF VCE=lOV, IC=lOOJ.A - - - 4.0 dB

R~=lk.O f=lkHz
Delay Time td VCC=30V, VBE(off)=-0.5V - 10 - 10
I~=150mA, IB1=15mA
Switching Rise Time tr Fig. 1 - 25 - 25
ns
Time Storage Time VCC=30V, IC=150mA - 225 - 225
tstg
IBl=-IB2=15mA
Fall Time tf Fig. 2 - 60 - 60
TOBHIBA CORPORATION
-40-
TOSHIBA SEMICONDUCTOR MPS2221A, MPS2222A
TECHNICAL DATA
Fig. 1 DELAY AND RISE TIME EQUIVALENT Fig. 2 STORAGE TIME AND FALL TIME
TEST CIRCUIT EQUIVALENT TEST CIRCUIT
30V 30V
1 :O;100P8
<5.Ona co
o
+16V '" ~-""--<l OUTPUT
~--r--() OUTPUT
-3.0V
Pw=1-100P8 DUTY CYCLE=2.0%
DUTY CYCLE=2.0%
SCOPE RISE TIME < 4n8
.. Cs : TOTAL SHUNT CAPAC ITANCE
TOSHIBA CORPORATION
-41-
TOSHIBA TRANSISTOR
FOR HIGH-SPEED SWITCHING USE Unit in mm

DC TO VHF AMPLIFIER APPLICATIONS AND
5.1MAX.
COMPLEMENTARY CIRCUITRY.
!
FEATURES:
~
""""
High DC Current Gain Specified : -0.1- -sOOmA
'I---t ~
0.45
~i)
~I
0.55MAX.
: @ IC=-sOmA, fT=200MHz(Min.) 0.45 I ~I [~
Low Collector-Emitter Satulation Voltage
: VCE(sat)=-1.6V(Max.) @ IC=-sOOmA
~~
Complementary to MPS222l, tIPS2222.
• •• 1 2 3
L EMITTER
2- BASE
3. COLLHlOTOR
~1AXIMUM RATINGS (Ta=2s0C) JEDHlO TO 92
CHARACTERISTIC SYMBOL RATING UNIT EIAJ SO 43
Collector-Base Voltage VCBO -60 V TOSHIBA 2-5FIF
Collector-Emitter Voltage VCEO -40 V Weight : 0.2lg
@ Ta=2soC Pc 625 mW
@ Tc=2soC Pc 1.5 W
Derate above 25°C 12 mW/oC

-42-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2SoC, Unless otherwise noted)

MPS2906 MPS2907
MIN. MAX. MIN. MAX.
Collector Cut-off Current ICBO VCB=-SOV, IE=O - -20 - -20 nA
Collector Cut-off Current ICBO VCB=-SOV, IE=O, Ta=lSO°C - -20 - -20 JlA
Collector Cut-off Current ICEX VCE=-30V, VBE=O.SV - -SO - -SO nA

Base Cut-off Current IBL VCE=-30V, VBE=O.SV - -SO - -SO nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=-lOJlA, IE=O -60 - -60 - V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-lOmA, IB=O -40 - -40 - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOJlA, IC=O S.O - S.O - V
VCE=-lOV, IC=-O.lmA 20 - 3S -
VCE=-lOV, IC=-1.OmA 2S - SO -
DC Current Gain hFE
VCE=-lOV, IC=-lOmA 3S - 7S -
VCE=-lOV, IC=-lSOmA 40 120 100 300
VCE=-lOV, IC=-SOOmA 20 - 30 -
Collector-Emitter IC=-lSOmA, IB=-lSmA - 0.4 - -0.4
VCE(sat) V
Saturation Voltage
IC=-SOOmA, IB=-SOmA - 1.6 - -1.6
Base-Emitter IC=-lSOmA, IB--1SmA - 1.3 - -1.3

VBE(sat) V
Saturation Voltage
IC=-SOOmA, IB=-SOmA - 2.6 - -2.6
VCE=-20V, IC=-SOmA
200 - 200 - MHz
Collector Output
Capacitance Cob VCB=-lOV, IE=O, f-lOOkHz - 8.0 - 8.0 pF
Input Capacitance Cib VEB=-2.0V, IC-O - 30 - 30 pF

f=lOOkHz
TOBHIBA CORPORATION
-43-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR MPS2906A.MPS2907A
FOR HIGH SPEED SWITCHING USE Unit in mm

I 5.HIAX. I
COMPLEMENTARY CIRCUTRY.
~
FEATURES: ~
High DC Current Gain Specified : -0.1- -500mA
H~I ~
nL~
High Transition Frequency 0.5514AX.
: @ IC·-50mA, fT=200MHz(Min.) 0.4.5 ~ ~

. Low Collector-Emitter Satulation Voltage
: VCE(sat)=-1.6V(Max.) @ ICa -500mA
~~
Complementary to MPS2221A, MPS2222A.
. •• i
1 2 3 ~
1. EMITTER
2. BASE
3. COLLECTOR
llAXII1UM RATINGS (Ta=25°C)
J'EDEC TO 92
CHARACTERISTIC SYMBOL RATING UNIT EIAJ' se 4.3
Collector-Base Voltage VCBO -60 V TOSHIBA 2-5F1F
Collector-Emitter Voltage VCEO -60 V Weight : 0.2lg

Emitter-Base Voltage VEBO -5.0 V
@Ta=25°C Pc 625 mW
Total Device DiSSipation

@Tc=25°C Pc 1.5 W

Storage Temperature Range Tatg -55 -150 °c
TOSHIBA CORPORATION
-44-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta-2S·C. Unless otherwise noted)

MPS2906A MPS2907A
MIN. MAX. MIN. MAX.
Collector Cut-off Current ICBO VCBz-SOV, IE=O - -10 - -10 nA
Collector Cut-off Current ICBO VCB=-SOV. IE=O. Ta=150·C - -10 - -10 IJA
Collector Cut-off Current ICEX VCE=-30V. VBE=0.5V - -50 - -50 nA
Base Cut-off Current IBL VCE=-30V. VBE=0.5V - -50 - -50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC--lOIJA. IE-O -60 - -60 - V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-lOmA. IB=O -60 - -60 - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOIJA. IC=O 5.0 - -5.0 - V
VCE=-lOV. IC=-O.lmA 40 - 75 -
VCE=-lOV. IC=-l.OmA 40 - 100 -
DC Current Gain hFE
VCE=-lOV. IC=-lOmA 40 - 100 -
VCE=-lOV. IC=-150mA 40 120 100 300
VCE=-lOV. IC=-500mA 40 - 50 -
Collector-Emitter IC=-150mA. IB=-15mA - 0.4 - -0.4
VCE(sat) V
Saturation Voltage
IC=-500mA, IB=-50mA - 1.6 - -1.6
Base-Emitter IC=-150mA, IB=-15mA - 1.3 - -1.3

V
Satulation Voltage VBE(sat)
IC=-500mA, IB=-50mA - 2.6 - -2.6
VCE=-20V. ICa -50mA
200 - 200 - MHz
Collector Output
Capacitance Cob VCB=-lOV. IE=O. f=lOOkHz - 8.0 - 8.0 pF
VBE=-2.0V. IC=O
Input Capacitance Cib f=lOOkHz - 30 - 30 pF
Turn-on Time ton VCC=-30V. IC=-150mA - 45 - 45

Delay Time td IBl--15mA - 10 - 10
Switching
Time
Rise Time tr Fig. 1 - 40 - 40
ns
Turn-off Time toff VCC--6.0V. IC--150mA - 100 - 100
Storage Time tstg -IBl-IB2--l5mA - 80 - 80
TOSHISA CORPORATION
-45-
TOSHIBA SEMICONDUCTOR MPS2906~ MPS2907A
TECHNICAL DATA
Fig. 1 DELAY AND RISE TIME Fig. 2 STORAGE AND FALL TIME
TEST CIRCUIT TEST CIRCUIT
-30V +15V -l!.OV

INPOT INPUT
Zo=50n
RISE TIMES: 2.0 DS

Zo=50n
PRl"=150 PPB ,,,S
RISE TIMES: 2.01'8
...,
d
r.::lIo-_ _ _O...;O..TPUT OUTPUT
_0 1 : L S IN~T'--f-....JV<_H TO OSCILLOSCOPE TO OSCILLOSCOPE

_. [J
6V
RISE TlMES:5.0Ds RISE TIMES: 5.0 DS
20008
TOSHIBA CORPORATION
-46-
TOSHIBA DARLINGTON TRANSISTOR
TOSHIBA SEMICONDUCTOR MPS-A13. MPS-A14
FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE Unit in mm

APPLICATIONS. 5.lMAX
FEATURE:
! I ;,..
..;
High DC Current Gain @ IC=lOOmA
MPS-A13 hFE=lO, 000 Min.
U45
.l-------t ~
I I ~1
z
'U55"AY H
MPS-A14 hFE=20,000 Min. ,..

:0;
M.L..
....o!
l.27 L27
"'d... !!
~l
I
"",,,,,oil
l 2 3
L EMITTER
rlAXItlut~ RATINGS (Ta-25°C) 2.BASE
3.COLLECTOR
JEDEC TO 92
Collector Base Voltage VCBO 30 V
EIAJ SC 43
Collector Emitter Voltage VCEO 30 V TOSHIBA 2-5FlF
Emitter-Base Voltage VEBO 10 V Weight : O.2lg
Ta=25°C Pc 625 mW
Derate above 25°C 5.0 mW/"C

Tc=25°C Pc 1.5 W

EQUIVALENT CIRCUIT
~
______ ~~LLECTOR
, ,
BASE:
, L ______ J
,
:
EMITTER
TOSHIBA CORPORATION
-47-
TOSHIBA SEMICONDUCTOR MPS-A13. MPS-A14
TECHNICAL DATA

Collector Cut-off Current ICBO VCB=30V, IE=O - - 100 nA
Emitter Cut-off Current lEBO VEB=lOV, IC=O - - 100 nA
Collec tor- Base
Collector-Emitter
Breakdown Voltage V(BR)CEO IC=O.lmA, IB=O 30 - - V
hFE(l)
(MPS-A13)
5000 - -
VCE=5.0V, IC=lOmA
hFE(l) 10.000 - -
(MPS-A14)
DC C;;urrent Gain
hFE(2) 10,000 - -
(MPS-A13)
VCE=5.0V, IC=lOOmA
hFE(2) 20,000 - -
(MPS-A14)
Collector-Emitter
Saturation Voltage VCE(sat) IC=lOOmA, IB=O.lmA - - 1.5 V
Base-Emitter On
Voltage VBE(ON) VCE=5V, IC=lOOmA - - 2.0 V
Transition Frequency fT VCE= 5V,IC=10mA,f=100MH 125 500 - MHz

COller;tor uutput
Capac~tance Cob VCB=lOV, IE=O, f=lMHz - 3.5 8.0 pF
Noise Figure NF VCE=5.0V, IC=1.OmA - 2.0 - dB

RS=lOOkO., f=1.0kHz
TOSHIBA CORPORATION
-48-
TOSHIBA TRANSISTOR
2N3055
TECHNICAL DATA
SILICON NPN TRIPLE DIFFUSED TYPE
GENERAL PURPOSE POWER TRANSISTOR Unit in mm

POWER REGULATOR, SWITCHING ANO SOLLENOID ¢25.0MAX. '"
01
DRIVES APPLICATIONS. ><'

~21.0MAX.1
'i1
><'
~
FEATURES: 01
oj
II ~j
/I II ~
High Gain at High Current
Low Saturation Voltage: VCE(sat) <1.1V, @I C=4A,IB=O.4A +0.09
¢1.0-0.04 Iii
Excellent Area of Safe Operatings
"'''
dd
MAXIMUM RATINGS (Ta=25 0 C) +1
<0
30.2±0.2 ~
CHARACTERISTIC SYMBOL RATING UNIT rl
* Collcetor-Base Voltage VCBO 100 V l~

Collector-Emitter Sustaining +0.08
* VCER(SUS) 70 V ¢4.0-0.15
VOl
-'Tj """
"01
VoltaRe (RRl1=IOO 0)
* Collector-Emitter Sustaining
Vnl .. ",,"p VCEO(SUS) 60 V ~ 1.J.1
.... 1 . /
f'" dd
+1
Ol
d
rl
* Emitter-Base Voltage VEBO 7 V
40.0MAX.
* Collector Current IC 15 A
* Base Current IB 7 A 1. BASE
2- EMITTER
* Collector Power Dissipation 115 ~J
(Tc-25 0 C) ·Derate Linearly Pc COLLECTOR (CASE)
0.66 W/ ·C JEDEC TO 204MA/TO 3
* Junction Temperature Ti 200 °c EIAJ TC 3,TB 3
* Storage Temperature Range Tst!>; -65 - 200 °c TOS!lIBA 2-21DIA
ELECTRICAL CHARACTERISTICS (Ta=25 0 C) WHght 12.6g

* Collector Cut-off Current ICEX VCE=IOOV, VBE=-1.5V - - 5 rnA
* Collector Cut-off Current Ir.F.x Vr.F.=IOOV,VBE=-1.5V,Tc=150 o C - - 30 rnA
* Collector Cut-off Current Ir.F.O Vr.E=30V, IR=O - - 0.7 rnA
* Emitter Cut-off Current lEBO VEB=7V, IC=O - - 5 rnA
* Collector-Emitter ** IC=0.2A, RBE=IOOO

Sustaining Voltage VCER(SUS 70 - - V
* Collector-Emitter ** IC=0.2A, IB=O

SustaininR VoltaRe VCEO(SUS 60 - - V
VCE=4V, IC=4A 20 - 70
* DC Current Gain hFE
VCE=4V, IC=IOA 5 - -
* Base-Emitter Voltage VRF. Vr.E=4V, Ir.=4A - - 1.8 V
* Collector-Emitter
VCE(sat)
Ir.=4A, IR=0.4A - - 1.1 V
Saturation Voltage
IC=IOA, IB=3.3A - - 8 V
* Small Signal Current Gain fhfe VCE=4V, IC=IA, f=lOkHz 20 - - kHz
ICut-off Freauencv
Small Signal Current Gain
* Second Breakdown Collector Ihfe l VCE=4V, IC=IA, f=IMHz 2.5 - -
* vCE=40v, t =ls -
: (Base Forward Bias)
Is/h
(;:;on reneth.ivel
2.87 - A
* In Accordance With JEDEC Registration Data.

** The sustaining voltages VCER(SUS) and VCEO(SUS) MUST NOT be measured Q.Il a curve tracer.
TOSHIBA CORPORATION
-49-
SEMICONDUCTOR
TOSHIBA 2N3055
TECHNICAL DATA
Ie - VeE hFE - Ie
500
-I-
'"
-
COMMON EMITTER Te=25"C 1>0 300 - I - Te 100"C
16 ""
'<
~
~4 ",.2 1.5
I Z
H
100
25
~
0
llj ".. 1.0 ;E
--
H
z...
12 U8 50
...z v::: U6
55
~ 30
::J0< U4 !30
::>
0 8
t/':: U3 COMMON EMITTER
10 VCE 4V ~
0<
...
0 ~ U2 8
5
0 Ul UOl U03 Ul U3 1 3 10
'"
..:>
..:>
0
4 U05 COLLECTOR CURRENT IC CA)
0 U03
IH' UOIA VBE(sat) - Ie
0
I 1l
COMMON EMITTER
0 2 6 8 10
COLLECTOR-EMITTER VOLTAGE Ic/IB 10
VCE CV)
VeE(sat) - Ie Te=-55"C
COMMON EMITTER
IC/IB 10
II
~25
ov·.t. f= 100
'0'0 U03 Ul U3 1 3 10
~~~~100 COLLECTOR CURRENT IC CA)
~ 25
:3 16
.;!
o
H
12 'A'
~I"'"
U03 Ul U3 1
COLLECTOR CURRENT Ic CA)
3 10
8 I-- -
lj<
(.,~
"-.-55
100
'j(
SAFE OPERATING AREA
4
If!
'II COMMON EMITTER
o /)V VCE=4V
o U8 1.6 2.4 3.2 4.0 4.8
BASE-EMITTER VOLTAGE VBE (V)
Pe - Tc
~ 150
~
0<
~ P< 100
0
- r-..
o
P<Z
o i'-- .......
O<H
~;;; 50
1'00....,
oP< ........
"'H
..:>'"
..:>'"
.......
........
OH
00 I"-....
U~ 10 30 100 o A 40 80 120 160 200 240
COLLECTOR-EMITTER VOLTAGE VCE Cv) CASE TEMPERATURE ·Te C"C)
TOSHIBA CORPORATION
-50-
TOSHIBA TRANSISTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER, POWER SWITCHING, Unit in nun

DC-DC CONVERTER AND REGULATOR APPLICATIONS [IJ
¢2tiOMAX d
FEATURES: • -H
. High Collector Dissipation : PC=150W (Tc=25°C) ~ IfLOMAXJ ~ ~

. High Collector Current : IC=30A (D.C) "l
. II ~I-
'"
MAXIMUM RATINGS (Ta=25°C)
+ClO9m
¢LO-ClO4
Collector-Base Voltage VCBO 50 V "'''
'*
dd
+1
Collector-Emitter Voltage 3Cl2±Cl2 '"
'* (VBE--l. 5V, RBE=lOO n) VCEX 50 V .-l
rl
Collector-Emitter Voltage 40 V l~
'* VCEO
+ClOB
'* Emitter-Base Voltage VEBO 5 V ¢4.0-Cl15
VO "'"
~ """ r!
Ol M
DC IC A ~
30 0
Collector Current
Peak ICM 30 A ./"
d
rl '"
Ol
DC IB 7.5 A 4ClOMAX
Base Current 1. BASE
Peak IBM 15 A
2. EMITTER
Collector Power Dissipation COLLECTOR(CASE)
Pc 150 W
(Tc=25°C) JEDEC TO-204MA/To-3
'* Junction Temperature Tj 200 °c EIAJ
TOSHIBA
TC-3,TB-3
2 21DIA
'* Storage Temperature Range Tstg -65 'V 200 °c
Weight l2.6g
ELECTRICAL CHARACTERISTICS (Ta-25°C)
'* Collector Cut-off Current ICBO VCB=50V, IE=O - - 2 rnA
'* Collector Cut-off Current 1CEX VCE=50V, VBE=-1.5V - - 2 rnA

VCE=30V, VBE=-1.5V
Collector Cut-off Current 1 CEX
Tc=150°C - - 10 rnA
'* Collector Cut-off Current ICEO VCE=30V, IB=O - - 10 rnA
'* Emitter Cut-off Current lEBO VEB=5V, IC=O - - 5 rnA
'* Collector-Emitter
Breakdown Voltage V(BR)CEO 1C=200rnA, 1B=O 40 - - V
VCE=4V, IC=15A 15 - 60
hFE
DC Current Gain VCE=4V, IC=30A 5 - -
Base-Emitter Voltage VBE VCE=4V, IC=15A - - 2.7 V
Collector-Emitter
IC=lSA, IB=1. SA - - 2 V
VCE (sat) IC=30A, IB=6A - - 4 V
VCE =4V, IC=lA 0.2 - - MHz
'* Transition Frequency fT
'* Small Signal Forward

Current Transfer Ratio hfe
VCE=4V, IC=lA
f=lkHz
40 - -
,*1n Accordance with JEDEC Registration Data.
TOBHIBA CORPORATION
- 51-
SEMICONDUCTOR
TOSHIBA 2N3771
TECHNICAL DATA
Ie - VeE hFE - Ie
32 500
P- 2.5
1 COMMON
..,~ 300
£
~~
~
..&.
L6
r--
L2
EMITTER
Tc=25'C
I ;;" 100
.... - Tc 100'C
25
-~
-
0.9 50
6 V 0.6
!O
::lI:>""
30
55
"
,r 0.45
0.3 0
0 10
_r-'
COMMON EMITTER "
~~
8
0.15 A
5
VCE 4V
~
IIl=0.05A 0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR CURRENT IC (A)
Q
o 2 6 8 10 VBE(sat) - Ie
0
COLLECTOR-EMITTER VOLTAGE VCE (v) COMMON EMITTER
Ic/Ill 10
VeE(sat) - Ie 3
5
~
~ COMMON EMITTER
..
....
3
IC/IIl=10
J.rt
1
Tc=-~ 5'C
~~
"I>
1 25
<II~
100
~
t'IJ,-... (15
.c,
.&l ""
.. m
<;; 0.3
~
'f'
/'0'0 ~ 25
0.00 0.1 0.3 1
COLLECTOR CURRENT
3
Ie (A)
10 30
f
....
(j: 0.1
...c~ 1'100
3 32
COMMON EMITTER
~ "" 0.05 o
U/
~~ 0.03 ,..-:
....
24 h VCE=4V
""""
00
-.0
rt
'" ~100
01> 0.01
0.01 0.03 0.1 0.3
COLLECTOR CURRENT
3
IC (A)
10 30
6f- - ~If!! ;--55
SAFE OPERATING AREA !.

50
IC MAX, (PULSED)- f-
f-+: "" 100"'.- 'if
~ 30 200"'.- A,V
"~. i~~
<Il 0
~
.1'0_,\
-CCONTINUOUS) l.ms· o 0.8 L6 2.4. 4.0 4.8
4> ~~::\ ..... BASID-EMITTER VOLTAGE

10 ~ 0.,0 "<II- > ,.... 100m.- VBE (V)
"'\>.1'.~~-/'; Pe - Tc
I
o
5
11111
C O.j.
,
£
~~150
200
.
gj
3
_ SINGLE NONREPETITIVE
PULSE Tc=25'C ~~ 100
I"-
~ CURVES MUST BE DERATED
~ 0:; ....
0"
r-....
.. <II
o
o
1
LINEARLY WITH INCREASE 0
fil e: 50
IN TEMPERATURE ""
(j:
""'" r-...
0. 51 3 10 30 100
""'"
gS 00 40 80 120 160 200 240 280 320
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE Tc ('C)
TOSHIBA CORPORATION
-52-
TOSHIBA TRANSISTOR
TECHNICAL DATA 2N3772
HIGH POI~ER AMPLIFIER, POWER SWITCHING Unit in mm

DC-DC CONVERTER AND REGULATOR APPLICATIONS ¢25.0MAX. '"
",
d
><
;j ±!
FEATURES: ;j 1.¢21.0MAX·.1 ><
<0
:'11~
",
High Collector Dissipation : PC=150W (Tc=25 0 C) ci
High Collector Current : IC=20A (D.C) II
MAXIMUM RATINGS (Ta=25 O C)

+0.09
¢1.0-D.04
1
CHARACTERISTIC SYMBOL RATING UNIT <or-
dd
+1
* Collector-Base Voltage VCBO 100 V 3D.2±D.2 '~
r
rl
(VBE=-1.5V, RBE=lOOn) VCEX 100 V
¢4.0t&~
Emitter-Base Voltage
VCEO 60 V
A-
___T
'" e.",
I~~
~
::;
* DC
VEBO
IC 20
7 V
A
~ 1.
r-/
+1
m
;;l
0
'"
",
Collector Current
* Peak ICM 30 A 40. a MAX.
Base Current DC IB 5 A 1. BASE

* Peak IBM 15 A 2. EMITTER
COLLECTOR ( CASE)
* Collector Power Dissipation
(Tc=25 0 C) Pc 150 W JEDEC TO-204MA/TO-3
EIAJ TC-3. TB-3
Junction Temperature °c
* Storage Temperature Range
Tj 200
-65'" 200 °c
TOSHIBA 2 21DIA
* Tstg
Weight . l2.6g
ELECTRICAL CHARACTERISTICS (Ta=2S o C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. ~1AX. UNIT
* Collector Cut-off Current ICBO VCB=lOOV, IE=O - - 5 mA

- -
* Collector Cut-off Current
ICEX VCE=lOOV, VBE=-1.5V
VCE=30X, VBE=-1.5V
- - 10
.
5 mA
* ICEX Tc=lSO C
mA
* Collector Cut-off Current ICEO VCE=SOV, IB=O - - 10 mA

Emitter Cut-off Current lEBO VEB=7V, lC=O - - 5 mA
* Collector-Emitter
* Breakdown Voltage V(BR)CEO lC=200mA, lB=O 60 - - V
VCE=4V, IC=lOA 15 - 60
* DC Current Gain hFE
VCE=4V, lC=20A 5 - -
* Base-Emitter Voltage VBE VCE=4V. IC=lOA - 1.0 2.2 V
* Collector-Emitter
VCE(sat)
lC=lOA, IB=lA - 0.3 1.4 V
Saturation Voltage
lC=20A, lB=4A - - 4 V
Transition Frequency fT VCE=4V, lC=lA 0.2 - - MHz
* Small Signal Current Gain I hrer VCE=4V, IC=lA, f=lkHz 40 - -
*
* In Accordance with. JEDEC Registration Data.
TDSHIBA CORPORATION
- 53-
SEMICONDUCTOR
TOSHIBA 2N3772
TECHNICAL DATA
IC - VCE
24 500
COMMON EMITTER I :
!Xl
300
ilL COMMON EMITTER
Tc=25t III
20 1.6 I VCE=4V
3: L' L4
L2
I :z;
...
H 100
Tc=100t
~ 0
0
H
1.0 E< 50 25
16 :z;
E< 1/ 0.8 !Xl 30
:z;
!Xl gj --r- Il1o..
0.65
V' I- -55
~
p
gj 12 0
p V 0.5 10
0
0.3 8
'"
0
E< 8
0.2
0.03 0.1 0.3 1 3 10 30
~
H
0
0.1
0 4 VBE(sat) - IC
0.06
IE' 0.02A COMMON EMITTER
Ic/IB 10
1.6 3.2 4.8 6.4 ao 9.6
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
Tc=-1I5t ~
COMMON EMITTER
~<25
IC/IB=10 1001I11L
0.03 0.1 0.3 1 3 10
Y.
.y'}.Q I 25
~c;..:: "-M <' 20
I HI
H
o
16
.., rLJl
.::I~ .... -55
,..100
0.03 0.1 0.3 1 3 10 ~I I

COLLECTOR CURRENT IC (A) If I
SAFE OPERATING AREA
I I
1/11 COMMON EMITTER
j
VCE=4V
'l/
0.4 0.8 L2 L6 2.0 2.4 2.S 3.2
BASE-EMITTER VOLTAGE VEE (V)
Pc - Tc
~ 200
~
gj ~ 150
.. SINGLE NONREPETITIVE ~
p.,:z; ......
PULSE Tc=25t p:j g 100
OE<
E<'"
1 CURVES MUST BE DERATED
LINEARLY WITH INCREASE ~e:
HOl
50 "-
IN TEMPERATURE HOl
OH
oA I'...
0.~1~--~-3~~-W~1~0--~~3~0~~~1~OtO~~ 40 80 120 160 200 .240 280 320
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE Tc (t)
TOSHIBA CORPORATION
-54-
TOSHIBA TRANSISTOR
2N3773
TECHNICAL DATA
HIGH PO~JER AMPLIFER POWER SWITCHING Unit in mm

DC-DC CONVERTER Arm'REGULATOR APPLICATIONS
¢25.0MAX. '" N
d
FEATURES: ><
;j 1¢21.0MAX.I ~ ~
High Collector-Emitter Sustaining Voltage: ~
II Ii ~-'!'.
VCEO(SUS)=140V (Min. ) @IC=0.2A, IB=O '" II II
Excellent Area of Safe Operatings.
MAXIMUI1 RATINGS (Ta=25°C)
+0.09
¢LO-0.04
II
CHARACTERISTIC SYMBOL RATHlG UNIT "'<-
dd
Collector-Base Voltage VCRO 160 V +1
* Collector-Emitter Voltage VCEX 160 V
30.2±0.2
'"
.-1
*
rl
Collector-Emitter Voltage VCEO 140 V 1~

* Emitter-Base Voltage VIiBO 7 V +0.08 <-'"
* ¢4.0-0.15
Wi """ ><
r
N'"
;j
rlr~
DC IC 16 A +1d 0
Collector Current Q)
Peak ICM 30 A 1-L./

d
rl '"
N
DC IB 4 A
Base Current 4 0. 0 MAX.
* Peak IBM 15
150
A
W
L BASE
Collector Power Dissipation
* (Tc-25°C)
Derate Linearly above 25°C
Pc
0.855 w/oc
2. EMITTER
COLLECTOR (CASE)
JEDEC TO 204MA/TO 3
* Storage Temperature Tstg -65 ~ 200 °c
EIAJ TC 3, TB 3
* TOSHIBA
Weight
2
12 6g
21DIA
ELECTRICAL CHARACTERISTICS Ta=25°C)

Collector Cut-off Current ICBO VCB=140V, IE=O - - 2.0 rnA
* Collector Cut-off Current - - 2.0
* Collector Cut-off Current
ICEX
ICEX
VCE=140V, VBE=-1.5V
VCE=1 4OV , VB~-1.5V, Tc=150°C - - 10
rnA
rnA
* Collector Cut-off Current ICEO VCE=120V, IB=O - - 10 rnA
* Emitter Cut-off Current lEBO VEB=7V, IC=O - - 5.0 rnA
* Collector-Emiiter VCEX(stnll Ic=O.lA, VBE=-1.5V
* Sustaining Vo tage RBE=lOO n 160 - - V
Collector-Emitter ** IC=0.2A,
Sustaining Voltage VCER(SUS) RBE=lOO n 150 - - V
Collector-Emitte~ **
Sustaining Voltage VCEO(SUS) IC=0.2A, IB=O 140 - - V
DC Current Gain
VCE=4.0V, IC=8A 15 - 60
hFE
VCE=4.0V, IC=16A 5 - -
* Base-Emitter Voltage VBE VCE=4.0V, IC=8A - - 2.2 V
Ic=8A, IB=0.8A - - 1.4 V
* Collector-Emitter
Saturation Voltage VCE (sat)
Ics 16A, IB=3.2A - - 4.0 V
* Small Signal Current Gain hfe VCE-4V, IC=1.0A, f=lkHz 40 - -

* Current Transfer Ratio Ihfe I VCE"'4V, Ic=1.0A, f=50kHz 4 - -
*In Accordance w~th JEDEC Registration Data.
**The sustaining voltages VCEX(SUS), VCER(SUS) and VCEO(SUS) MUST NOT be measured on a curve
tracer.
or otherwise under any patent or patent nghts of TOSHIBA or others. TDSHIBA CORPORATION
-55-
TECHNICAL DATA
Ie - VeE
500
2.0 COMMON EMITTER Tc=25t IZ1
COMMON EMITTER
LO 300
3
18
'"
.<: III
Tc=100t
VCE=4V
Cl8
o '"..:
H 100
H
12
rt Cl8
" 50 25
Cll'j ~
I
I o
0:;
8
'/
Cl4.
Cl3
n2
~
::>
0
0
I'>
30
10 -~
-55
,
...o 5
ClOl Cl03 Cll Cl3 1 3 10
~
Cll
H
t nos COLLECTOR CURRENT IC (A)
o
o IB Cl02A VBE(sat) - Ie
I I 0 COMMON EMITTER
o 2 4. 6 8 10
IC/IB 10
COLLECTOR-EMITTER VOLTAGE VCE (v)
VeE(sat) - Ie Tc=-55t ~
COMMON EMITTER
III ~ 5
IC/IB 10 25
100
·0 ~ Cl03 Cll Cl3 1 3 10
Q~
~
,,0~ COLLECTOR CURRENT IC (A)
55
"25
==
-
3:
o
16
COMMON EMITTER
Ie - VBE
-,
H
12
VC~4V
/J
Cl03 Cll 1 3 10 rl
I 8 .1", ;
'I'QII 'fr_
SAFE OPERATING AREA o
25
0:;
...o -55
~H
4
"'J. I
o
o a A'/JV
o Cl4 Cl8 1.2 L6 2.0
I
o
0:;
3H-+++I-Il--
III p';> 150
0
Pe - Tc
~ g", r-.
~
o
PULSE Tc.=25t Jl:j
0'"
g 100
o CURVES MUST BE DERATED "'<Ii

~ e: 50
r-...
Cl5 LINEARLY WITH INCREASE HOJ
H!7l
IN TEMPERATURE OH
01'> r-..
Cl33~~~~10~--~~3~0~~~1~0~0~~-3~0~0~ 40 80 120 180 200 240 280 320
COLLECTOR-EMITTER VOLTAGE VCE (v) CASE TEMPERATURE Tc (t)
TO.HIIIA CORPORATION
-56-
TOSHIBA TRANSISTOR
TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE
SWITCHING REGULATOR AND HIGH VOLTAGE Unit in nnn
SWITCHING APPLICATIONS.
><
¢25.0MAX.
. "~
HIGH SPEED DC-DC CONVERTER, RELAY AND SOLENOID ;i fi2J.OMAX]
II II ~ ~
DRIVER APPLICATIONS. '"
<'l ~I-
1\ 11
FEATURES: . +(l09
jOLO-(104 Iii
High Sustaining Voltage : VCEO(SUS)=300V ( Min.)
"'"
dd
+1
High Collector Current : IC=15A (Max.) 3(l2±(l2 <0
..;
rl
Excellent Switching Times
l~
¢4.0:t:g~~
W l "- "'"'" ><
;i
~~~
~1
1 \+1 '" d
0
""1/ '" rl
4(lOMAX.
MAXIMUM RATINGS (Ta=250C) L BASE

CHARACTERISTIC SYMBOL RATING UNIT 2. EMITTER
COLLECTOR (CASE)
Collector-Base Voltage VCBO 650 V JEDEC TO 204MA/TO 3
* Collector-Emitter Voltage VCEV 650 V ErA.! TC 3,TB 3
* Collector-Emitter Sustaining TOSHIBA

VCEX(SUS) 350 V 2-21E1A
Voltage
Collector-Emitter Sustaining Weight : 15.8g
* Voltage VCEO(SUS) 300 V
Emitter-Base Voltage 9 V
* VEBO
* Collector Current I DC IC 15 A
I Peak ICM 30 A
* Base Current IB 10 A
* Emitter Current IE - 25 A
* Collector Power I Tc=250C 175 W
Dissipation
I Tc=lOOoC Pc 100 W
Derate Linearly above 25°C 1 W/oC
200 °c
* Junction Temperature Tj
* Storage Temperature Range Tstg -65- 200 °c
Thermal Resistance 8jc 1 °C/W
*
* Lead Temperature °c
TL 275
(3.l7nnn from case for 5s)
TOSHIBA CORPORATION
-57-
2N6546
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=250C)

* Collector Cut-off Current ICEV VCE=650V, VBE=-1.5V 1 rnA
* Collector Cut-off Current ICEV VCE=650V,VBE=-1.5V; Tc=lOO C 4 rnA
* Collector Cut-off Current ICER VCE=650V, RBE=50{4 Tc=lOOoC 5 rnA
* Emitter Cut-off Current lEBO VEB=9V, IC=O 1 rnA
* Collector-Emitter ** IC=8A, Vclamp=350V, Tc=lOOoC 350 - - V

Sustaining Voltage (No te: 1) ~ CEX (SUS) I--=-----=----'=="-----''-----=-o+----h---+---+---l
IC=15A,Vclamp=200V, Tc=lOO C 200 - - V
* Collector-Emitter 300 V
Sustaining Voltage
VCE=2V, IC=5A 12 60
* DC Current Gain
VCE=2V, IC=lOA 6 30
IC=lOA, IB=2A 1.5 V
* Collector-Emitter
VCE(sat) IC=15A, IB=3A 5 V
Saturation Voltage
IC=lOA, IB=2A, Tc=lOOoC 2.5 V
* Base-Emitter VBE(sat)
IC=lOA, IB=2A 1.6 v
Saturation Voltage IC=lOA, IB=2A, Tc=lOOoC 1.6 V
* Transition Frequency fT VCE=lOV, IC=0.5A, f=lMHz 6 28 MHz

* Collector Output Capacitance Cob VCB=lOV, IE=O, f=lMHz 125 500 pF
~~=:=~=:~y~T=:=:=:~e__~~~:~:__--4IBl~m ~~
VOO:~~i~UT~_:~~_:~ ~_:~~5__:_:~
__
* Switching storage Time tstg INPUr - - 4.0 IlS
Time ~------------+--~=--4 IBl=-IB2=2A IB2
Fall Time tf DUTY CYCLE < 20/0 - - 0.7 Il s
Storage Time tstg 0 - - 5.0 Il S

See Fig.l Tc=lOO C
Fall Time tf - - 1.5 IlS
* Second Breakdown Collector

ls/b
VCE=lOOV, t=ls 0.2 A
·r.llrrpnt(Base forward biased) (non reoetitive)
* In Accordance with JEDEC Registration Data.

** The sustaining voltages VCEX(SUS) and VCEO(SUS) MUST NOT be measured on a curve tracer.
Notel: Test condition VCC=20V, L=1801lH, (Lr=0.05Q)
Fig.l : Inductive Load Switching Time Test Circuit.

L=1801lH
(Lr=ClOiSQ)
Vclamp = 350V Vcc=20V
IB=2A ICp=lOA
f=lkHz
DUTY CYCLE:S: 30/0
TOSHIBA CDRPORATIDN
-58-
SEMICONDUCTOR
TOSHIBA 2N6546
TECHNICAL DATA
Ie - VeE
20 16
COMMON EMITTER
3
COMMON EMITTER
I 'I
,::, 16
I To=25'C
0
12
VCE=2V
r--f;; f//J
-
H
1.4
'"
- --
L2
~
o ~
~ 'f--...l00
.... r--
:::::
H
1.0_ ~
I-- -55
2 ......::: (l8_ gj 8
h~ (l6 "
0 '(1/
~r- ~ r- (l4
'...."
0
II /
-
0 4
~ ,....- I 'H" /I
/" (l2
"
0
0
/..L '/
4V (l1
0
o (l4 (l8 L2
BASE-EMITTER VOLTAGE VBE: (V)
L6 2.0
lB' (l05A
0
0
o 2 4, 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE CV) VCE(sat) - Ie
3
'....o"
H
COMMON EMITTER
IC/IB=5 11111
~ 1
500
o<~~
COMMON EMITTER
"~> 0. 5
~ 300 "'~
VCE=2V "'~ (l 3 Cl i-
~""
'"
'" 10 0
'" "."
.... ~~~
~
25
-55
i~
H
;3 50 r=r=
!-=t=
To 100'C
~ > (l0
(l
1~~
30 o
25 i; § (l053 '""
~~
10 --55 HH
00 0.01
0> (l01 (l03 (l1 (l3 1 3 10 20
5
COLLECTOR CURRENT IC CA)
~01 (l03 (l1 (l3 1 3 10 20
COLLECTOR CURRENT Ic CAl
Pe - TC
20
VBE(sat) - Ie
20 '...."
0
H
0
COMMON EMITTER < I"
IC/I;) 5 '"'Ii'
H~
" 15 0
..... f'...
5 "'~
~F
H
A 0
3
'" I'.
, ~ 10
""
0
To-I00'C
1
'"
'...."
5
3 \25
100
0
0
'"
H
H
50
..... ,
1/ 0
"
0
(l 1 Q
(l01 (l03 (l1 (l3 1 3 10 20 o 40 80 120 160 200
COLLECTOR CURRENT IC CA) CASE TEMPERATURE To ('C)
TOSHISA CORPORATION
-59-
TOSHIBA TRANSISTOR
SWITCHING REGULATOR AND HIGH VOLTAGE Unit in nun

SWITCHING APPLICATIONS. M
,025.01IAX.
HIGH SPEED DC-DC CONVERTER, RELAY AND SOLENOID M·
\7J21.0I4AxJ M ii
.,
;i ::i oS
DRIVER APPLICATIONS. '"
<1
II
q
II
~I-
II
FEATURES: ,01.0:!:~g~
High Sustaining Voltage : VCEO(SUS)=400V ( Min.) .,,,
dd
High Collector Current : IC=15A (Max.) +1
:3U2±U2 '"....
rl
Excellent Switching Times
l~
+UOB
,04.0-U15
A: ,I 'I """ "'0
J~~
+1
g
~J
0
' 0>
1 l/ ~ 'co"
4.UOI4AX.
MAXIMUM RATINGS (Ta-2SoC) 1. BASE
CHARACTERISTIC SYMBOL RATING UNIT 2. EMITTER
COLLECTOR (CASE)
Collector-Base Voltaie VCBO 850 V 'TO 204.MA/TO :3
JEDEC
~ Collector-Emitter Voltage VCEV 850 V EIAJ. TC-3. TB-3
~ Collector-Emitter Sustaining
450 V TOSHIBA 2-21EIA
Voltage VCEX(SUS
~ Collector-Emitter Sustaining
400 V Weight : l5.8g
Voltage VCEO(SUS
~ Emitter-Base Voltage VEBO 9 V
I DC IC 15 A
~ Collector Current
Peak ICM 30 A
I
~ Base Current IB 10 A
~ Emitter Current IE - 25 A
~ Collector Power ITc=25OC 175 W
Dissipation
ITc=lOOoC Pc 100 W
Derate, Linearly above 25°C 1 wloc
U c
j
Junction Temperature Tj 200
j
Storage Temperature Range Tstg -65- 200 °c
Thermal Resistance 8jc 1 °CIW
Lead Temperature °c
TL 275
(3.l7nun from case for 5s)
rights of the thin:j parties which may result from its use. No license is granted by implication
TOaHIBA CORPORATION
-60-
SEMICONDUCTOR
TOSHIBA 2N6547
TECHNICAL DATA

* Collector Cut-off Current ICEV VCE=850V, VBE=-1.5V - - 1 rnA
* Collector Cut-off Current ICEV VCE=850V,VBE=-1.5V,Tc=100oC - - 4 rnA
* Collector Cut-off Current ICER VCE=850V,RBE=500, Tc=lOOoC - - 5 rnA
* Emitter Cut-off Current lEBO VEB=9V, IC=O - - 1 rnA
* Collector-Emitter ** IC=8A, Vc l amp =450V, Tc=100oC 450 - - V

Sustaining Voltage (Note:1) VCEX(SUS) IC=15A, Vc l amp =300V,Tc=10OoC 300 - - V
* Collector-Emitter **
Sustaining Voltage VCEO(SUS) IC=O.lA, IB=O 400 - - V
DC Current Gain VCE=2V, IC=5A 12 - 60

* hFE
VCE=2V, IC=lOA 6 - 30
IC=lOA, IB=2A - - 1.5 V
* Collector-Emitter
Saturation Voltage VCE(sat) IC=15A, IB=3A - - 5 V
IC=lOA, IB=2A, Tc=lOOoC - - 2.5 V
* Base-Emitter
VBE(sat)
IC=lOA, IB=2A - - 1.6 V
Saturation Voltage
IC=lOA, IB=2A, Tc=lOOoC - - 1.6 V
* Transition Frequency fT VCE=lOV, IC=0.5A, f=lMHz 6 - 28 MHz
* Collector Output Capacitance Cob VCB=10V, IE=O, f=lMHz 125 - 500 pF

Delay Time td lOO.us VCC=250V - - 0.05 .us
* Switching
Rise Time
Storage Time
tr
'ruDia IB2
INPUT
~-'"'
lju.
OUTFUT -
-
-
-
1.0
4.0
.us
.us
tstg
Time IBl =-IB2=2 A IB2
Fa1l Time tf DUTY CYCLE s;: 2'7'0 - - 0.7 .us
Storage Time tstg - - 5.0 .us
See Fig.1 Tc=100°C
Fa1l Time tf - - 1.5 .us
* Second Breakdow~ Collector VCE=lOOV, t=ls
Current(Base forward biased) Is/b (non repetitive)
0.2 - - A
* In Accordance with JEDEC Registration Data.
** The sustaining voltages VCEX(SUS) and VCEO(SUS) MUST NOT be measured on a curve tracer.
Note.l Test condition VCC=20V, L=180.uH (L r =0.050)
Fig. 1 Inductive Load Switching Time Test Circuit
L=lBO.uH
Cr.,.=(lO50)
Vclamp= 4.50V VCC=20V
ICp=lOA
TOaHIBA CORPORATION
-61-
2N6547
TECHNICAL DATA
IC - VCE
20 16
OOMMON EMITTER ~ OOMMON EMITTER I ,)
I TC=25"C
,j
o
VOE=2V ,-- t;' //1
3 16 12
'l f:::.l
H
0
lot-- f- 1.2_
... 'f -
......-: t:::: f-- ....-
H
1.0 ~ 1:5
...z ~ 8
II ~ ....-
12 0.8
"o (II
~ 0.6
...['o:1 IIIIi
0
~ ~
-
~ 8 0.4, 4,
...
0
0 / ~
o AI
"'"' V 0.2
o
VL V
'0"' 4, 0.4, 0.8 1.2 1.6 2.0
0
V 0.1
IB 0.05A
I 0
2 6 8 10
OOLLEOTOR-EMITTER VOLTAGE VOE (V) VCE(sat) - IC
z 3
0
...
H COMMON EMITTER
III
hFE - Ic 01 1 IC/IB-5
50 0 ...t:>
oo(;~"@
~
<~ 0.5
f;)
30 0 OOMMON EM.ITTER
VOE=2V
ca~
p:+,.....,. 0.3 ~o _
'"z "
"a>
+> ,\cf ~_ 25
10 0 ...
...
..&~ -55
H
< 5 of=f= i 1J 0.1
0>
... 30
r--r- Tc 100"C J, ~
o
0.05
~ 25 1; 1;1 0.03
~ 55
~;'i
t:> 10
0 '"''"'~
g 0.01
0
5 0.01 0.03 0.1 0.3 1 3 10 20
<=>
3 COLLECTOR CURRENT IC (A)
0.01 0.03 0.1 0.3 1 3 10 20
COLLECTOR CURRENT 10 CA)
Pc - Tc
200
VBE(sat) - IC z
0
20 H
z
o
H".,....... 10
COMMON EMITTER
E-<
<
P-<
150
"-
... ~ IC/IB 5 H
ca~ .....
~~
00;0
5 H~
<=> 0
"-
~ ~
00
~';;1
"...... '"
H
~
a>
3
1
Tc=10 O"C ~
~P-<
~
~
~
100
" "- ........
:.I" 0.5 ...0
0
50
l~
00,",
0.3
\'25
100 "'"'
.....
r--..
<0
"'~ II '"'
0
0
~
0.1 o
0.01 0.03 0.1 0.3 1 3 10 20 o 4,0 80 120 160 200
COLLECTOR CURRENT Ie CA) CASE TEMPERATURE Tc ("C)
TOBHIBA CORPORATION
-62-
SEMICONDUCTOR TOSHIBA TRANSISTOR
TOSHIBA BU208
TECHNICAL DATA
SILICON NPN TRIPLE DIFFUSED HESA TYPE
COLOR TV HORIZOtlTllL OUTPUT APPLICATIOtIS. Unit in mm

COLOR TV S~JITCHING REGULATOR APPLICATIONS. ,.;
¢25.0MAX.
FEATURES:
,,'
;J f21'21.0MAX1 ,,'
;J--=l
;J
.
<Xl
! "I ''""
High Voltage : VCES=1500V
Low Saturation Voltage : VCE(sat)=5V (Max.)
'"
+0.09
91'1.0-0.03
Fall Time : tf=0.71's (Typ. )
Glass Passivated Base-Collector Junction '"-H
d
30.2±0.2 0
..<
rl
1~
MAXIl~Ull RATINGS (Ta=25 0 C) +0.08

x: l.-4f '""" ,.;
91' 4.0 -0.15
2 'fI '"-H
d
;J
0
~lJ
0
Collector-Emitter Voltage VCES 1500 V :/ d'" <d'"

51/ rl

40.0MAX
Collector Current I DC IC 5 A
1. BASE
2. EMITTER
I Peak ICM 7.5 A
COLLECTOR (CASE)
Base Current (Peak) IBM 4 A
JEDEC TO 3
Total Power Dissipation
Ptot 12.5 W EIAJ TC-3. TB-3
(Tc S:95°C)
Uc TOSHIBA 2 21B1A
Junction Temperature Tj +115
Mounting Kit No. AC42C
Weight : 17.0g
Thermal Resistance Rth(j-c) 1.6 °C!W
ELECTRICAL CHARACTERISTICS (Tc=25 0 C)

CHARACTERISTIC SnIBOL TEST CONDITION MIN. TYP. HAX. UNIT
Collector Cut-off Current ICES VCE=1500V, VBE=O - - 1 mA
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lmA, IC=O 5 - - V
DC Current Gain hFE VCE=5V, IC=4.5A 2.25 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC=4.5A, IB=2A - - 5 V
Base-Emitter
Saturation Voltage VBE(sat) IC=4.5A, IB=2A - - 1.5 V
Collector-Emitter
Sustaining Voltage VCEO(SUS) IC=100mA, IB=O, L=25mH 700 - - V
Transition Frequency fT VCE=5V, IC=O.lA

---_.-. "------
- 7 - MHz
Collector Output Capacitance Cob VCB=10V, IE=O, f=lMHz - 125 - pF
Switching Time
.I Fall Time tf ICH=4.5A, IB(end)=1.8A - 0.7 - I's
'I Storage Time t stg ICH=4.5A, IB(end)=1.8A - 10 - I'S
The information contained herein is presented only as a guide fDr the applicatiDns Df Dur
products. No. respDnsibility is assumed by TOSHIBA fDr any infringements of patents or Dther
rights Df the third parties which may result from its use. No. license is granted by implicatio.n
TOSHIBA CtlRPORATION
Dr otherwise under any patent or patent rights of TOSHIBA Dr Dthers.
-63-
TOSHIBA SEMICONDUCTOR BU208
TECHNICAL DATA
IC - VCE
10 100
COMMON EMITTER
50
.<:'"
f« To 25'C
30
<'
~
8
,., II
H
0
H
<>1
'" 10 II
'",., 6 '",., 0
~ ~
5
o~~
~'"
:::> :::> 3 &tJ.
0
0 I
4 0
0::
0
'"
0
'" 110 30 50 100 300 500 1000 3000 5000
I
'"
..:l
..:l
0
2
COLLECTOR CURRENT Ic (mA)
0
00 2 4 6 8 10 1.4
COLLECTOR-EMITTER VO~TAGE VCE (V) E: COMMON EMITTER
>'"'"
To = 25'C
1.2
VCE(sat) - IB
'~" b::=:=:
\ ::=:=:::: :;::::: F-
\\ 1\ 1\\ '"
..:l
0
>
1.0 r-- - .;:~ol>
;::;-
\ \ &1
1\ r\ \ \. '"'" '~~5
r-- H
~
(18 4.0
\ \ \. 't '"
OJ
3.0
\ \ 1\.1"-
~
<>1
,,4.5 "' (16
(14 (18 1.2 1.6 2.0
I\~ ~4 ~ I---
BASE CURRENT IB (A)
~\- f'... r--....

"- ~ Pc - To
COMMON EMITTER
To = 25'C
" r-.......
~
H
20
INFINITE HEAT SINK
0
o (14 (18 1.2 1.6 2.0
~
H
OJ 15
BASE CURRENT IB (A) OJ
H
'"
!; 10
\
o~
~ 0
o::~
o 5
\
'"f;l
~
o 0
1\
o 0 20 40 60 80 100 120
CASE TEMPERATURE To (t)
TOSHIIIA CORPORATION
- 64-
TOSHIBA TRANSISTOR
BU208A
TECHNICAL DATA
SILICON NPN TRIPLE DIFFUSED MESA TYPE
COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in rom

COLOR TV SWITCHING REGULATOR APPLICATIONS.
)2I25.0MAX
>< !<f21.0MAX
FEATURES: ;i
High Voltage : VCES=lSOOV ''""
Low Saturation Voltage: VCE(sat)=lV (Max.) +0.09
)211.0-0.03
Fall Time : tf=0.7fts (Typ.)
Glass Passivated Collector-Base Junction
'"
d
+I
30.2±0.2 o
.....-1
1~
MAXIMUM RATINGS (Ta=2S o C) +0.08
104.0 0.15 x:~-{D-"----':""k~~ ~
r-----------------------1-------+---------t---~1
Collector-Emitter Voltage 1'.'
, T, 0 0
VCES 1500 V 1 -' Ol '"
/ .... '"
Emitter-Base Voltage VEBO 5 V 40.0MAX.
Collector Current I DC IC 5 A
L BASE
I Peak ICM 7.5 A 2.EMITTER
COLLECTOR (CASE)
Base Current (Peak) IBM 4 A
JEDEC TO 3
Total Power Dissipation
P tot 12.5 W EIAJ TC-3, TB-3
(Tc;:;;; 95°C)
U TOSHIBA 2 21B1A
Junction Temperature Tj +115 c
Mounting Kit No. AC42C
Storage Temperature Range Tstg -65-+115 °c
Weight: l7.0g
Thermai Resistance Rth(j-c) 1.6 °C/W
ELECTRICAL CHARACTERISTICS (Tc=2S o C)

Collector Cut-off Current ICES VCE=lSOOV, VBE=O - - 1 rnA
Emit ter-llase
Breakdown Voltage V(BR)EBO IE=lrnA, IC=O 5 - - V
DC Current Gain hFE VCE=SV, IC=4.5A 2.25 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC=4.5A, IB=2A - - 1 V
Base-Emitter
Saturation Voltage VBE(sat) IC=4.SA, IB=2A - - 1.5 V
Collector-Emitter IC=lOOmA, IB=O
Sustaining Voltage VCEO(SUS L=2SmH
700 - - V
Transition Frequency fT VCE=SV, IC=O.lA - 7 - MHz

Collector Output Capacitance Cob VCB=lOV, IE=O, f=IMHz - 125 - pF
Switching Tl.me
. • IFa11 Time tf ICM=4.SA, IB (end)=1. SA - 0.7 - fts
IStorage Time tstg I~4.SA, IB (end)=1. SA - 10 - tis
TOSHIBA CORPORATION
-65-
TOSHIBA SEMICONDUCTOR BU208A
TECHNICAL DATA
100
COMMON EMITTER
~ 50 Tc 25"(;
.q
, - VCE
IC
zH
30
L ~
OOMMON EMITTER 2~ I-"' ;§
...z 10
1 III
~
Tc=25"C
k-": I-"' ~ p 'o~~~10
6
V., V r- ~ "
gj 5
oS"
'"
0 3
1·[
'< 5
lL I.--...- I-""'" V r- 1000 ~
~
0
A
I I
o I.V ;"'" V . . . 1--- ~OO lio 30 100 300 1000 3000
OOLLECTOR OURRENT IC (mA)
10000
H
...z (f / ,,/
.........
., I-"'
~
.......-
1/ / ' " .-!P- - ~
,\
,,/
i
o
0::
...o
3
'I , /
'I , / ......
,,/
...-
......... ~ -
~
400
-r--
I
-
-
10
VCE(sat) -
\
IB
OOMMON EMITTER
Tc = 25"C
~ I' /' 200
8
o
o
2
'I ./
...- ~
[ 1\ \
1 \
1
r/"
'/
/
-
/' 100
IB=50mA
6
I\~
\~ ~4
\
f\
~
'\
,
0
0
o 2 4 8 10 1\
OOLLEOTOR-EMITTER VOLTAGE VOE Cv)
1\ \
2
I\, '\
"r--..
0
o U4 U8
. 1'-
L2 1.6
'1'-0....
2.0
BASE OURRENT IB CA)
1.4
OOMMON EMITTER
Tc = 25"C z
o
>"'" 1.2 ...
H
Pc - Tc
"~ \.-,::::: ~ INFINITE HEAT SINK

E-<
~ LO r-- t-- -~"

"\.c~ -- I:::::: ~ ~
r- '"'"
H
A
15
,
0:; ...-:::::
4
\
"
E-<
E-<
U8
........ 3
H
5 \
"i:i'" U6 1\120
o U4 U8 1.2 1.6 2.0 20 40 60 80 100
BASE CURRENT IB CA) OASE TEMPERATURE Tc C"C)
TOSHISA CORPORATION
-66-
TOSHIBA SEMICONDUCTOR BU208A
TECHNICAL DATA
TYPICAL DRIVE CONDITION DATA DRIVE CONDITION DATA

L5 , 5 L5
j , PEAK CO LLECTOR PEAK COLLECTOR II
~ L3
I'
,
CURRENT
IOp=4.5A S 1. 3
CURRENT
ICp=3.4A
V !/
I V
1.1
, ''''
"- fX,
t ar1<B
FORWARD BASE
CURRENT
~ L1
AMBIENT
TEMPERATURE lL
.~
II
J
,
IBl(end)=LSA E-< To=25'C
..J II I
0.9 :ilI'<'" 0. 9
1/ /
"- ....
'" I' -
To =6 5"(;
I~r E-< Ii 112
I;;
1/LO
...-- tf
" ... " 0.7 I"I'\.
~
0.7
f"'.. tj. ~ IJ,!{' II IJ Is
-=oY... -
~ ~ ... ..,..
I - r-
'- ~ r--- 25'(;\ ., 5 '"
o ['\. L
0.5
0.3
r--- b,
1
~
0:;
o
E-<
o
~
0. 5 -
0. 3
.. V
IIlIt: ~ I"':: ~ ~
/
0.6
I-
!::::
0.1 0.2 0.3 0.4 0.5 0.6
1 0.7 '8o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
BASE CURRENT GRADIENT -<l.IB/d t (A./tta) BASE CURRENT GRADIENT -dIB/dt (A./tta)
DRIVE CONDITION DATA

L5
PEAK COLLEC-
TOR CURRENT
I
1.3 ICp=3.4A .1 lL
AMBIENT II I
1.1
TEMPERATURE
To=65"(;
...,~ I II
1/
;- ~L2 r- r· O
II ...,~"
0.9
1,\ I 1i.8
t- f-
0.7
I'-, Hill I 11
~ I" I IL
...... ~
0.5 'IIIIIi ~ L
~ ;>~ 0.6 t-
3
0.0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
BASE CURRENT GRADIENT -dIB/dt (A/tta)
TOSHIBA CORPORATION
-67 -
TECHNICAL DATA BUY71

SILICON NPN TRIPLE DIFFUSED MESA TYPE
TV HORIZONTAL OUTPUT APPLICATION. Unit in nun

¢25.0MAX.
M
:li
FEATURES: ~. ~
Ir~
M
:li<Xl
High Voltage : VCEX=2200V
Fast Switching : tf=0.7lts (Typ.)
t1 . ""i ",1-
t1
¢l.o:!:~g~
'"d
-H
0
3D.2±D.2 .-l
rl
MAXIMUM RATINGS (Ta=25 0 C) 1~

CHARACTERISTIC SYMBOL RATING UNIT ¢~o:!:&~g
Collector-Base Voltage 2200 V x:
v;: ""'-.... '" :li><
d
VCBO f~!)- -H
0
0
~
/'
Peak Collector-Emitter
Voltage VCEX 2200 V ./' '"d ''""
rl
Collector-Emitter Voltage SOO V 4,D.OMAX.

VCEO
Emitter-Base Voltage VEBO 5 V 1. BASE
2. EMITTER
Collector Current IC 2 A COLLECTOR (CASE)
Base Current IB 2 A J'EDEC TO-3

EIA.f TC 3. TB 3
Collector Power Dissipation
(Tc,,; SO·C) Pc 10 W TOSHIBA 2-21B1A
Junction Temperature Tj 100 °c Weight : l7.0g

ELECTRICAL CHARACTERISTICS (Ta=25 0 C)

CHARACTERISTIC SYMBOL TEST CONDITION HIN. TYP. MAX. UNIT
Collector-Emitter Cut-off
Current ICEX VCE=2200V, VBE=-2V - - 1 rnA
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOOrnA, IC=O 5 - - V
Collector-Emitter
Saturation Voltage VCE(sat) IC=1. SA, IB=1.5A - - 10 V
Base-Emitter
Saturation Voltage VBE(sat) IC=1.5A, IB=1. SA - - 1.5 V
Transition Frequency fT VCE =5V, IC=O.lA - 4 - MHz

Collector Output Capacitance Cob VCB=lOV, IE=O, f=1.0MHz. - 50 - pF
Icp=1. 2A
Fall Time tf
IBl(end)=0.55A
- 0.7 - ItS
TOSHIBA CORPORATION
-68-
SEMICONDUCTOR BUY71
TOSHIBA
TECHNICAL DATA
Ie - VeE (LOW VOLTAGE REGION)

1.8 100
- ,..1'1
COMMON EMITTER COMMON EMITTER
;.!.-
- ,..- -" 50 Tc 25"C

TC=25"C
--- -
~
~ ~
'< 1.4
o LV
,..-
~
~
~ ..
zH
co
30 VCE=15V
Nl"
r--
-----
10
H
V...... v i---
~ '"
z
1'1
~
5 10/
'" 1.0
V~ 1 iilp
Io /~ r- i-- ~
0
0
A
3 5/
II \
- -
.. 0.8
-
~ -
-
a ~ 1 2
i-- ~
'"f.1 5~
COLLECTOR CURRENT IC CA)
H
(j 0.4
~~
o 1--1"""
'V IB=10mA 2.0
I 0 ~
COMMON EMITTER
Tc=25"C
I I II
2
COLLECTOR-EMITTER VOLTAGE
4 6 8
VCE (V)
10
H
0
1.5 I fl
r--
'"Z
~
p
1.0
d
.
"'
1 5
1\ COMMON EMITTER .. 0
a
H
II
'"
\ Tc=25"C
'"
1'1
0 (15
\ H
H
a ·1
0
11 JJ
(16 (18 1.0 1.2
\1 BASE-EMITTER VOLTAGE V BE (V)
(15 -
i:st\
\L ,
1\
(14 (18 1.2

'J.
1.6 2.0 2.4
BASE CURRENT IB (A)
Pe - Tc
I'"
p
!\ ..
o
a
\ '"f.1
H
H
a
o
\
20 40 60 80
\
100
CASE TEMPERATURE Tc ("C) COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA CORPORATION
-69-
TOSHIBA MJE13002
INDUSTRIAL APPLICATIONS
Unit in DUD
SI~ITCHINGREGULATOR.
&3I4AX. pi 3.1 ±U1
DC-DC CONVERTER, AC-DC INVERTER.
,c,. ,-"'.J:2.J
HIGH VOLTAGE, HIGH SPEED SIJITCHING APPLICATION.
SPECIFICATION FEATURES:
• VCEO(SUS)=300V(Min.)
VCEV-600V Blocking Capability ~111----1-
1.0l4AX
Excellent Switching Time: tr=lps(Max.), 1.914AX
...
'"
;Ii
tf=0.7ps(Max.) ......o
MAXIMUH RATINGS (Ta-2S·C)

CHARACTERISTIC
SYMBOL
VCEO(SUS)
RATING
300
UNIT
V
2.3±U1
~k
...
~rYiF=f1~
. 2.3+U1
><
Collector-Emitter Voltage VCEV 600 V

1. BASE
Emitter-Base Voltage VEBO 9 V 2. COLLECTOR
3. E141TTER
Collector Current DC IC 1.5 A JEDEC
Pulse ICp 3 EIAJ
Base Current DC IB 0.75 A TOSHIBA 2-SJIB
Pulse IBP 1.5 Weight: 0.81g

~--------------+----4--~---4-------4----4
Emitter Current DC IE 2.25
A
Pulse IEP 4.5
@Ta=2S·C IDerate Above 2S·C 11.2 mW/·C
Collector Power Dissipation 40 W
@Ta=2S"C IDerate Above 2S·C 320 mW/"C
Storage,Temperature Range Tstg -65-150 ·C
THERr~ALCHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Jurtction to Case Rth(j-c) 3.12 ·C/W
Thermal Resistance, Junction to Ambient Rth(j-a) 89 ·C/W
Maximum Lead Temperature for Soldering ·C
Purposes (0.32mm from case for 5 seconds) TL 275
TOSHIBA CORPORATION
-70-
SEMICONDUCTOR
TOSHIBA MJEl3002
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tc=2S·C Unless otherwise noted)

Collector-Emitter Voltage VCEO(SUS) IC=IDmA, IB=O 300 - - V
VCE=600V, VBE=-I.SV - - I rnA
~ollector Cut-off Current ICEV VCE=600V, VBE=-I.SV
Tc=IOO·C
- - 5 rnA
Emitter Cut-off Current lEBO VEB=9V, IC=O - - I rnA

DC Current Gain hFE(I) VCE=2V, IC=O.SA 8 - 40
hFE(2) VCE=2V, IC=IA 5 - 25
VCE(sat)1 IC=O.SA, IB=O.IA - - 0.5
r.ollector-Emitter
VCE(sat)2 IC=IA, IB=0.2SA - - 1
Saturation Voltage VCE(sat)3 IC=1. SA, IB=O.SA - - 3 V
IC=lA, IB=0.2SA
VCE(sat)4 Tc=IOO·C - - I
VBE(sat)1 IC=O.SA, IB=O.lA - - 1

Base-Emitter VBE(sat)2 IC=lA, IB=0.2SA - - 1.2
V
Saturation Voltage
IC=lA, IB=Q.2SA
VBE(sat)3
Tc=100·C
- - 1.1
Transition Frequency fT VCE=IOV,IC=lOOrnA,f=IMHz 4 10 - MHz

VCB=lOV, IE=O
Collector Output Capacitance Cob
f=O.lMHz
- 20 - pF
Second Breakdown Collector

r.urrent with Base Forward Is/b Ref. Figure
Biased
~lamped Inductive SOA
~ith Base Reverse Biased RBSOA Ref. Figure
Switching Time
Delay Time td Resistive Load - - 0.1 p's
Characteristics
Rise Time tr (VCC=12SV, IC=lA - - 1 p's
(1) Storage Time tstg IBl=-IB2=0.2A,tp=2Sp.s - - 4 p.s
Fall Time tf Duty Cycle <1%) - - 0.7 p.s
Storage Time tsv Inductive Load - - 4 p.s

Switching Time (ICclA, Vclamp=300V
Crossover
~haracteristics
(2) Time tc IBl c O.2A, VBE(off)C-S\ - - 0.75 p.s
TceIOO·C)
Fall Time tfi - 0.15 - p's
TOSHISA CORPORATION
-71-
TOSHIBA TRANSISTOR
SEMICONDUCTOR MJE13003
TOSHIBA
SWITCHING REGULATOR Unit in mm
DC-DC CONVERTER, AC-DC INVERTER. c
a3MAX. ¢3.1 ±Cll
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION. --;~

~ #1.. ..-
~If I V '" d
.., to ::::
--
~ ~ ')
A\(.::tb.. .-+1
SPECIFICATION FEATURES: ~ ~
lii ....
VCEO(SUS)=400V(Min.) ~
, r~
VCEV=700V Blocking Capability
LOMAX.
Excellent Switching Time : tr=lJts (Max.) , L9l!AX :z
....
tf=0.7#s(Max.) Cl75±Cll5
.....
lii
0
MAX Itlur·1 RATINGS (Ta=2S·C) 2.3±Cll 2.3±Cll
~~9Uit{l~
Collector-Emitter Voltage VCEO(SUS) 400 V
Collector-Emitter Voltage VCEV 700 V L BASE
Emitter-Base Voltage VEBO 9 V 2. COLLECTOR
3. EMITTER
Collector Current DC Ie 1.5 A JEDEC -
Pulse ICp 3 EIAJ
DC IB 0.75 TOSHIBA 2-BJ1B
Base Current A
Pulse IBP 1.5 Weight: 0.81g
DC IE 2.25
Emitter Current A
Pulse IEP 4.5
@Ta=2S·C IDerate Above·2S·C Pc
11.2 mW/"C
Pc
@Ta=2S·C IDerate Above 2S·C 320 mWI"C
Storage Temperature Range Tst!!: -65-150 ·C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case Rth(j-c) 3..12 ·C/W
Maximum Lead Temperature for Soldering 275 ·C
Purposes (0.32mmfrom case for 5 seconds) TL
TOSHIBA CORPORATION
-72-
SEMICONDUCTOR
TOSHIBA MJE13003
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tc~25·C Unless otherwise noted)

Collector-Emitter Voltage VCEO(SUS) IC=lOmA, IB=O 400 - - V
VCE=700V, VBE=-1.5V - - I mA
Collector Cut-off Current ICEV VCE=700V, VBE =-1.5V
Tc=lOO·C
- - 5 mA
Emitter Cut-off Current lEBO VEB=9V, IC=O - - 1 mA

DC Current Gain hFE(l) VCE=2V, IC=0.5A 8 - 40
hFE(2) VCE=2V, IC=lA 5 - 25
VCE(sat)l IC=0.5A, IB=O.lA - - 0.5
Collector-Emitter VCE(sat)2 IC=lA, IB=0.25A - - 1

V
Saturation Voltage VCE(sat)3 IC=1.5A, IB=0.5A - - 3
IC=lA, IB=0.25A
VCE(sat)4
Tc=lOO·C
- - 1
VBE(sat)l IC=0.5A, IB=O.lA - - 1

Base-Emitter
Saturation Voltage VBE(sat)2 IC=lA, IB=0.25A - - 1.2 V
IC=lA, IB=0.25A
VBE(sat)3
Tc=lOO·C - - 1.1
Transition Frequency fT ~CE=lOV,IC=lOOmA,f=lMHz 4 10 - MHz

VCB=lOV, IE=O
f=O.lMHz
- 20 - pF

Current with Base Forward Is/b Ref. Figure
Biased
Clamped Inductive SOA
RBSOA Ref. Figure
with Base Reverse Biased
Switching Time
Delay Time td Resistive Load - - 0.1 p.s
Characteristics Rise Time tr (VCC=12.5V, lC=lA - - 1 p.s

(1) Storage Time tstg IBl--IB2=0.2A, tp=25p.s - - 4 p.s
Fall Time tf Duty Cycle <1%) - - 0.7 p.s
Storage Time tsv Inductive Load - - 4 p.s

Switching Time Crossover (IC=lA, Vclamp=300V
Characteristics
(2) Time tc IB1=0.2A, VBE(off)=-5V - - 0.75 p.s
Fall Time tfi Tc=lOO·C) - 0.15 - p's
TOSHIBA CORPORATION
-73-
TOSHIBA TRANSISTOR
TOSHIBA SILICON NPN TRIPLE DIFFUSED TYPE
TECHNICAL DATA
Unit in mm
SWITCHING REGULATOR. lo.314AX. ¢:l.6±o.2
I'LL VI' ::ll ili
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION.
..ili
)< ~ .,... .<
..,:i
-1
'..." [
VCEO(SUS)=300V(Min.)
Excellent Switching Time : tr=O. 7p'S (Max. ) ,
tf=0.9p.s(Max.)
'"oj
L6MA';1
I
,.;
H
:&
0
...
oj
r I
~ I
MAXIMU~' RATINGS (Ta=25·C)
2.54 2.5' ~
CHARACTERISTIC
SYMBOL
VCEO(SUS)
RATING
300
UNIT
V
iPi:
Col
..,
,
.-l
10
d '..
~~
,
.. -2-3-
-1 •
_ to
oj
.t.
Collector-Emitter Voltage VCEV 600 V 1. BASE

Emitter-Base Voltage 9 V 2. COLLECTOR (HEAT SINK)
VEBO :l. EMITTER
Collector Current DC IC 4
A JEDEC TO-220AB
Pulse ICp 8 EIAJ 8C-46
DC IB 2 TOSHIBA 2-10A3A
Base Current A
Pulse IBP 4 Mounting Kit No. AC75
Weight : 1.8g
Emitter Current DC IE 6 A
Pulse IEP 12
@Ta=25·C IDerate Above 25·C Pc
16 mW/·C
Collector Power 'Dissipation 75 W
Pc
@TA=25·C· IDerate Above 25·C 600 mW/·C
Storage Temperature Range Tstg -65 -150 ·C
Thermal Resistance, Junction to Case Rth(j-c) 1.67 ·C/W
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 ·C/W
Purposes (O.32mm from case for 5 seconds) TL
TOSHIBA CORPORATION
-74-
SEMICONDUCTOR
TOSHIBA MJE13004
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tc=25·C Unless otherwise noted)

ollector-Emitter Voltage VCEO(SUS) IC=IOmA, IB=O 300 - - V
~ollector Cut-off Current ICEV

VCE=600V, VBE=-1.5V - - 1 rnA
VCE=600V, VBE=-1.5V
Tc=100·C
- - 5 rnA
~itter Cut-off Current lEBO VEB=9V, IC=O - - 1 rnA

pC Current Gain hFE(l) VCE=5V, IC=lA 10 - 60
hFE(2) VCE=5V, IC=2A 8 - 40
VCE(sat)l IC=lA, IB=0.2A - - 0.5
r.ollector-Emitter
~aturation Voltage
VCE(sat)2 IC=2A, IB=0.5A - - 0.6
V
VCE(sat)3 IC z 4A, IB=lA - - 1
IC=2A, IB=0.5A
VCE(sat)4
Tc=lOO·C
- - 1
VBE(sat)l IC=lA, IB=0.2A - - 1.2

!Base-Emitter
~aturation Voltage
VBE(sat)2 IC=2A, IB=0.5A - - 1.6 V
IC=2A, IB=0,.5A
VBE(sat)3
Tc=lOO·C
- - 1.5
~ransition Frequency fT VCE=10V, IC=500rnA,f=IMHz 4 - - MHz

VCB=lOV, IE=O
~ollector Output Capacitance Cob - 55 - pF
f=O.IMHz
~econd Breakdown Collector
urrent with Base Forward Is/b Ref. Figure
/Biased
~lamped Inductive SOA
pith Base Reverse Biased RBSOA Ref. Figure
~witching Time
Delay Time td Resistive Load - - 0.1 ps
r.haracteristics
Rise Time tr (VCC=125V, IC=2A - - 0.7 ps
(1) Storage Time tstg IBl=-IB2=0.4A tp=25ps - - 4 ps
Duty Cycle <1%)
Fall Time tf - - 0.9 ps
Switching Time
Storage Time tsv Inductive Load - - 4 ps
l;haracteristics (IC=2A, Vclamp=300V
Crossover
(2) Time tc IBl=0.4A, VBE(off)=-5V - - 0.9 ps
Tc=lOO·C)
Fall Time tfi - 0.16 - ps
TOSHIBA CORPORATION
-75-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR MJE13005
SWITCHING REGULATOR Unit in DUn
1 Cl3MAX. ¢3.6±Cl2
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION. I'IM" ::lI a~
.. -:xv
.,... k
rr
SPECIFICATION FEATURES: ..,~
. VCEO(SUS)-400V(Min.) a< '...."
'"t1
. Excellent Switching Time: trEO. 7ps(Max.),
f---
z
....
a
tf=O. 9#s Olal<.) 1.6MAX.
~
II 0
...
t1
I-
2.114 2.1\4-
><
<
MAXmUM RATINGS (Ta-25·C) :IE
CHARACTERISTIC
SYMBOL
VCEO(SUS)
RATING
400
UNIT
V ~~-'t-~-3-tt-f,
'"
::l
I
cl '" '"
Collector-Emitter Voltage VCEV 700 V

1. BASE
Emitter-Base Voltage VEBO 9 V 2. COLLECTOR (HEAT SINK)
3- EMITTER
Collector Current DC Ie 4
A JEDEC TO-220AB
Pulse ICp 8 EIAJ SC 46
Base Current DC IB 2 TOSHIBA 2-10A3A
A
Weight : 1.8g
Pulse IEP 12
Collector Power Dissipation 2 w
Pc
@Ta=25·C IDerate Above 25·C 16 mW/·C
Pc
Storage Temperature Range Tstg -65-150 ·C
THERI4AL CHARACTERISTICS
Thermal Resistance, Junction to Case Rth(1-c) 1.67 ·C/W
Thermal Resistan~e, Junction to Ambient Rth (j-a) 62.5 ·C/W
~ximum Lead Temperature for Soldering
TL 275 ·C
Purposes (0.32mm from case for 5 seconds)
Th~ information contained herein is presented only as a guide for the applications of our
-76-
SEMICONDUCTOR
TOSHIBA MJE13005
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tc-25·C Unless otherwise noted)

Collector-Emitter Voltage VCEO(SUS} IC=lOrnA, IB=O 400 - - V
VCE=700V, VBE=-1.5V - - 1 mA
Collector Cut-off Current ICEV VCE-700V, VBE=-1.5V
Tc=lOO·C
- - 5 mA

DC Current Gain hFE(l) VCE=5V, IC=lA 10 - 60
hFE(2) VCE=5V, IC=2A 8 - 40
VCE(sat)1 IC=lA, IB=0.2A - - 0.5
Collector-Emitter VCE(sat}2 IC=2A, IB=0.5A - - 0.6
V
Saturation Voltage VCE(sat}3 IC=4A, IB=lA - - 1
IC=2A, IB=0.5A
VCE(sat}4 Tc=lOO·C - - 1
VBE(sat}l IC=lA, IB=0.2A - - 1.2

Base-Emitter
Saturation Voltage VjlE(sat}2 IC=2A, IB=0.5A - - 1.6 V
IC=2A, IB=0.5A
VBE(sat}3
Tc=lOO·C
- - 1.5
Transition Frequency fT VCE=lOV, IC=500mA,f=lMHz 4 - - MHz

VCB=lOV, IE=O
f=O.lMHz
- 55 - pF

Biased
Clamped In~uctive SOA RBSOA Ref. Figure
~e1ay Time td Resistive Load - - 0.1 ps
Switching Time ~ise Time tr (VCC=l25V, IC=2A - - 0.7 ps
Characteristics
(I) ~torage Time
'all Time
tstg
tf
IBl=-IB2=0.4A tp=25ps
Duty Cycle <l%)
-- -
-
4
0.9
ps
ps
~tor~ge Time tsv Inductive Load

(IC=2A, Vclamp=300V
- - 4 ps
Switching Time
Characteristics r.rossover Time
(2) tc IBI-0.4A, VBE(off)=-5V .- - 0.9 ps
Tc-lOO·C)
'all Time tfi - 0.16 - ps
TOSHIBA CORPORATION
-77-
TOSHIBA TRANSISTOR
TECHNICAL DATA
Unit in mm
SWITCHING REGULATOR. 1D.3I4AX. pJ3.6±D.2
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION.
VCEO(SUS)=300V(Min.) .~
~'~~~r+rL-----4
VCEV*600V Blocking Capability
Excellent Switching Time: tr=I.Sps(Max.), '"....::E
tf=0.7ps(Max.)
1.614AX
II o
~
....
.
.. .
I ~2.54.,j~
~~XIMUM RATINGS (Ta=2S"C)
CHARACTERISTIC
SYMBOL RATING
300
UNIT
V
CkF
.
..,
....
d
2.54
..'
-1 - 2 - 3-
oj
VCEO(SUS) 1 I
Emitter-Base Voltage VEBO 9 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Collector Current DC IC 8 A JEDEC TO-220AB

Pulse ICp 16 EIA:!

A
Weight : 1. 8g
Pulse IEP 24
Pc
@Ta=2S"C IDerate Above 2S"C 16 mW/"C
Pc
@Ta=2S"C I
Derate Above 2S"C 640 mW/"C
Junction Temperature Tj ISO "C
Storage Temperature Range TsU -6S-150 "C
Thermal Resistance, Junction to Case Rth (j-c) I.S6 "C/W
Thermal Resistanoe, Junction to Ambient Rth(j-a) 62.5 "C/W
Maximum Lead Temperature for Soldering
Purposes (0.32mm from case for S seconds) TL 275 "c
TOSHISA CORPORATION
-78-
TOSHIBA
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tc~25·C Unless otherwise noted)

Collector-Emitter Voltage VCEO(SUS) IC=IOmA, IB=O 300 - - V
Collector Cut-off Current ICEV

VCE=600V, VBE=-1.5V - - 1 mA
VCE~600V, VBE=-l. 5V
Tc=lOO·C
- - 5 mA
DC Current Gain hFE(l) VCE=5V, IC=2A B - 60

hFE(2) VCE=5V, IC=5A 5 - 30
VCE(sat)l IC=2A, IB=0.4A - - 1
Collector-Emitter VCE(sat)2 IC=5A, IB=lA - - 2

V
Saturation Voltage VCE(sat)3 IC=BA, IB=2A - - 3
lC=5A, IB=lA
VCE(sat)4 Tc=lOO·C - - 3
VBElsat)l lC=2A, IB=0.4A - - 1.2

Base-Emitter VBE{sat)2 IC=5A, IB=lA - - 1.6
V
Saturation Voltage IC=5A, IB=lA
VBE(sat)3
Tc=lOO·C - - 1.5
Transition Frequency fT VCE=10V,IC=500mA,f=lMHz 4 - - MHz

VCB=IOV, IE=O
Collector Output Capacitance Coh
f=O.lMHz
- 90 - pF

Current with Base Forward Is/h Ref. Figure
Biased
with Base Reverse Biased RBSOA Ref. Figure
Switching Time
Delay Time td Resistive Load - - 0.1 p's
Characteristics Rise Time tr (VCC=125V, lC=5A - - 1.5 p.s

IBl=-IB2=IA, tp=25p.s
(1) Storage Time tstg
Duty Cycle <1%)
- - 3 p.s
Fall Time tf - - 0.7 p.s
Inductive Load
Switching Time Storage Time tsv
(IC=5A, Vclamp=300V
- - 2.3 p's
Characteristics
(2) IBI=lA, VBE(off)=-5V
Crossover
Time
tc Tc=lOO·C) - - 0.7 p's
TOSHIBA CORPORATION
-79-
TOSHIBA TRANSISTOR
TECHNICAL DATA
Unit in mm
SWITCHING REGULATOR.
lo.3MAX. ¢3.5±U2
!IL~r :;}.<
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION. ...~
.xv
SPECIFICATION FEATURES: .. '" ..,'<"
:Ii
<
:0;; ...
III
. VCEO(SUS)=400V(Min.) '"t'l
r-i :z:
Excellent Switching Time : tr-l. 51'S (Max.) ~
tf=0.7Ils (Max.)
L6I4AX.
U76
II 0
t'l
....
I
2.54 2.54
.<<
RATINGS (Ta=25·C)
-.M,
MAXIMU~' :0;;
~Pf
N lO _ co .J
CHARACTERISTIC SYMBOL RATING UNIT ..,
.
....
d ".
·1 - 2 - -
N J
Collector-Emitter Voltage VCEO(SUS) 400 V
1
Emitter-Base Voltage VEBO 9 V 2. OOLLECTOR (HEAT SINK)
3. EMITTER
Collector Current DC IC 8 A :rEDEC TO-220AB
Pulse ICp 16 EIAJ SO-46
Base Current DC IB 4 A TOSHIBA 2-10A3A

Weight : 1. 8g
DC IE 12
Emitter Current A
Pulse IEP 24
Pc
Pc
@Ta=2S·C IDerate·Above 2S·C 640 mW/·C
Junction Temperature Tj ISO ·C
Storage Temperature Range Tstg -6S -ISO ·C
THERI·1AL CHARACTERISTICS
CHARACTERISTIC SYMBOL !-\AX. UNIT
Thermal Resistance, Junction to Case Rth(i-c) I.S6 ·C/W
Thermal Resistance, Junction to Ambient Rth (j-a) 62.5 ·C/W
Purposes (0.32mm from case for 5 seconds) TL
- 80-
SEMICONDUCTOR
TOSHIBA MJE13007
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tc~25°C Unless otherwise noted)


VCE~700V, VBE=-1.5V - - 1 mA
ICEV VCE=700V, VBE=-1.5V
- - 5 mA
Tc=lOO·C
DC Current Gain hFE(l) VCE=5V, IC=2A 8 - 60

hFE(2) VCE=5V, IC=5A 5 - 30
VCE(sat)l IC=2A, IB=0.4A - - 1
Collector-Emitter VCE(sat)2 IC=5A, IB=lA - - 2

V
Saturation Voltage VCE(sat)3 IC=8A, IB=2A - - 3
IC=5A, IB=lA
VCE(sat)4
Tc=lOO·C - - 3
VBE{sat)l IC=2A, IB=0.4A - - 1.2

Base-Emitter VBE(sat)2 IC=5A, IB=lA - - 1.6
V
Saturation Voltage IC=5A, IB=lA
VBE(sat)3
Tc=lOO·C
- - 1.5
Transition Frequency fT VCE =10V,IC=500mA,f=lMHz 4 - - MHz

VCB=lOV, IE=O
f=O.lMHz - 90 - pF

Biased
Clamped Inductive SOA Ref. Figure
with Base Reverse Biased RBSOA
Switching Time
Delay Time td Resistive Load - - 0.1 p.s
Characteristics Rise Time tr (VCC=125V, IC=5A - - 1.5 p.S

(1) Storage Time tstg IBl=-IB2=lA, tp=25p.s - - 3 P.S
Fall Time tf Duty Cycle <1%)

- - 0.7 p.S
Inductive Load
Switching Time
Storage Time tsv
(IC=5A, Vclamp=300V,
- - 2.3 P.S
Characteristics
(2) Crossover IBl~lA, VBE(off)--5V
Time tc
Tc-lOO·C)
- - 0.7 p.s
TOSHIBA CORPORATION
- 81-
TOSHIBA TRANSISTOR
TOSHIBA
Unit in DUD
SWITCHING REGULATOR.
1 (l3MAX. ¢!l.6±(l2
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION. ~·fPfr ~~ .. ~
'" ..,<
SPECIFICATION FEATURES: ..
<
:E
:IE
....'" ,
VCEO(SUS)=300V(Min.) 0/
O'l f-
VCEV=600V Blockng Capability ,- ,.;
. Excellent Switching Time : tr=lJls (Max. ) , ; I
tf=O. 71's (Max. )
L6l4AX.
~
I 0
O'l
....
I
I
...
<
....i¥t~
2.54 2.54
1Pi
:E
MAXIMUM RATINGS (Ta=25·C)
CHARACTERISTIC SYMBOL RATING UNIT ..,.-i
Collector-Emitter Voltage VCEO(SUS) 300 V , -1-2-3-

VEBO
!l. EMITTER
DC IC 12
Collector Current A J"EDEC TO-220AB
Pulse ICp 24 EIAJ SC-46

A
DC 18 Weight : 1. 8g
Emitter Current IE A
Pulse IEP 36
Pc
@Ta=25·C ~rate Above 25·C 16 mW/·C
Pc
@Ta=25·C ~rate Above 25·C 800 mW/·C
THERr·IAL CHARACTERISTICS
CHARACTE~ISTIC SYMBOL MAX. UNIT
rights of the thi~d parties which may result from its use. No license is granted by implication
TOSHIBA CORPORATION
or otlierwise under any patent or patent rights of TOSHIBA or others.
- 82-
SEMICONDUCTOR
TOSHIBA MJE13008
TECHNICAL DATA


VCE z 600V, VBE=-1.5V - - 1 mA
ICEV VCE=600V, VBE=-1.5V
Tc=lOO·C
- - 5 mA
DC Current Gain hFE(I) VCE=5V, IC=5A B - 40

hFE(2) VCE=5V, IC=BA 6 - 30
VCE(sat)I IC=5A, IB=lA - - I
Collector-Emitter
VCE(sat)2 IC=BA, IB=1.6A - - 1.5
Saturation Voltage VCE(sat)3 IC=12A, IB=3A - - 3 V

IC=BA, IB=1.6A
VCE(sat)4
Tc=lOO·C
- - 2
VBE(sat)l IC=5A, IB=IA - - 1.2

Base-Emitter VBE(sat)2 IC=BA, IB=1.6A - - 1.6
V
Saturation Voltage IC=BA, IB=1.6A
VBE(sat)3
Tc=IOO·C
- - 1.5
Transition Frequency fT VCE=IOV, IC=500mA,f=lMHz 4 - - MHz

VCB=lOV, IE=O
f=O.lMHz
- 130 - pF

Biased
with Base Reverse Biased RBSOA Ref. Figure
Delay Time td Resistive Load - - 0.1 /lS
Switching Time
Characteristics
Rise Time tr (VCC=125V, IC=BA - - 1 /lS
(1) Storage Time tstg IBI =-IB2=1. 6A, tp=25/ls - - 3 /lS

Duty Cycle <1%)
Fall Time tf - - 0.7 /lS
Inductive Load
Switching Time Storage Time tsv
(IC=BA, Vclamp=300V,
- - 2.3 /lS
Characteristics
(2) -Crossover IBl=I.6A, VBE(off)=-5V
Time tc Tc=IOO·C) - - 0.7 /lS
TOSHIBA CORPORATION
- 83-
TOSHIBA TRANSISTOR
TECHNICAL DATA
Unit in DUD
SWITCHING REGULATOR
1 Cl3J.!AX. ¢3.6±Cl2
[~
HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATION. ~_Mr ~I ~
~
SPECIFICATION FEATURES: 0<

-:xv t1
t-
<
o<
'" ..,'"
< ...'"
VCEO(SUS}=400V(Min.} '"
w
t1
I~
Excellent Switching Time : t r =lpsWax.} ,
f---1!
tf=0.7ps(Max.} L6W\X.
~ I
2.54 2.54 !;!
'"w ...'"
MAXIMUM RATINGS (Ta=25"C)
CHARACTERISTIC
SYMBOL
VCEO(SUS}
RATING
400
UNIT
V
~~
~
...
'"d ..... -
-1-2-3- ~J,
T
VEBO 3. EMITTER
Collector Current DC Ie 12
A JEDEC TO-220AB
Pulse ICp 24 EIAJ so 46
A
Weight : I.Sg
Emitter Current DC IE IS A
Pulse IEP 36
@Ta=25"C IDerate Above 25"C Pc mW!"C
16
Pc
@Tac 25"C [Derate Above 25"C SOD mW"C
Junction Temperature Tj 150 "C
Storage Temperature Range Tstg -65-150 "C
THERI4AL CHARACTERISTICS
CHARACTERISTIC SYHBOL MAX. UNIT
Thermal Resistance, Junction to Case Rth(j-c} 1. 25 "C/W
Thermal ReSistance, Junction to Ambient Rth (j-a) 62.5 "C!W
Maximum Lead Temperature for Soldering "C
The information contained herein is presented only as a guide for the applIcatIOns of our
TOBHIBA CORPORATION
- 84-
SEMICONDUCTOR
TOSHIBA MJE13009
TECHNICAL DATA

Collector-Emitter Voltage VCEO(SUS) IC=IDmA, IB=O 400 - - V
~';E=7L.:lV, VBE=-1.5V - - I mA
Collector Cut-off Current ICEV VCE=700-v, VBE=-1.5V
Tc=lOO·C - - 5 mA
Emitter Cut-off Current lEBO VEB=9V, IC=O - - I mA
DC Current Gain hFEU) VCE=5V, IC=5A B - 40

hFE(2) VCE=5V, IC=BA 6 - 30
VCE(sat)1 IC=5A, IB=lA - - I
VCE(sat)2 IC=BA, IB=1.6A - - 1.5
Collector-Emitter
Saturation Voltage
VCE(sat)3 IC=12A, IB=3A - - 3 V
IC=BA, IB=1.6A
VCE(sat)4
Tc=lOO·C
- - 2
VBE(sat)l IC=5A, IB=IA - - 1.2

Base-Emitter
Saturation Voltage
VBE(sat)2 IC=8A, IB=1.6A - - 1.6 V
IC=8A, IB=1.6A
VBE(sat)3
Tc=IOO·C
- - 1.5
Transition Frequency fT VCE=IOV, IC=500mA,f=IMHz 4 - - MHz

VCB=lOV, IE=O
Collector Output Capacitance Cob - 130 - pF
f=O.lMHz
Biased
RBSOA Ref. Figure
Dealy Time td Resistive Load - - 0.1 itS
Switching Time
Characteristics
Rise Time tr (VCC=125V, IC=8A - - 1 itS
(1) Storage Time tstg IBI=-IB2=1.6A, tp=25lts - - 3 itS

Duty Cycle <1%)
Fall Time tf - - 0.7 ItS
Inductive Load
Switching Time
Storage Time tsv
(IC-8A, Vclamp=300V,
- - 2.3 itS
Characteristics
(2) Crossover IBI=I.6A, VBE(off)=-5V
Time tc Tc=lOO·C) - - 0.7 itS
TOSHIBA CORPORATION
-85-
TOSHIBA TIP29
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS Unit in DUll
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1Q.:3I4AX. ¢3.6±Q.2
SWITCHING.
FEATURES:
High Collector Power Dissipation : PC=30W @Tc=2S·C
~~ -1j ~~ ~.
to
...'"
~.
~L'
High Collector Current : IC(Dc}=lA(Max.} , .
High DC Current Gain: hFE=40(Min.} @VCE=4V, IC=0.2A '"
H
:0;
a
Complementary to TIP30 J.5:'x.1 ...'" I
~
2.54 2.54
..
;!
MAXIMUM RATINGS (Ta=2S·C) 1&' "3::1---t ~

t'J
..4
d '"
........
. 1 . 2·
~1
I
1. BASE
Collector-Emitter Voltage VCEO 40 V 2. COLLECTOR(HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO S V
JEDEC TO-220AB
Collector Current I DC IC 1
A EIAJ SC-46
I Pulse ICp 3 TOSHIBA 2-10AIA
Continuous Base Current IB 0.4 A Weight: 1.9g
Collector Power Ta=2S·C I Pc
2
W
Dissipation
Tc=2S·C I 30
Unclamped Inductive Load
Energy ES/B 32 mJ
Junction Temperature Tj ISO ·C

Thermal Resistance, Junction to Ambient Rth(j-a) 62.S ·C/W
TOBHIBA CORPORATION
·or otherwise under any patent or patent rights of TOSHIBA or others.
- 86-
SEMICONDUCTOR
TOSHIBA TIP29
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR) CEO IC=30mA, IB=O 40 - - V
Collector Cut-off Current ICEO VCE=30V, IB=O - - 0.3 mA

Collector Cut-off Current ICES VCE=40V, VBE=O - - 0.2 mA
DC Current Gain hFE(l) VCE=4V, IC=0.2A 40 - -

hFE(2) VCE=4V, IC=lA 15 - 75
Base-Emitter Voltage VBE VCE=4V, IC=lA - - 1.3 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=lA, IB=125mA - - 0.7 V
VCE=lOV, IC=0.2A
Small-Signal Current Gain hfe 20 - -
f"lkHz
VCE=lOV, IC=0.2A
Small-Signal Current Gain I hfe I 3 - -
f=lMHz
Switching Time ITurn-on Time ton IC=lA, IBl=-IB2=100mA - 0.5 - p's
ITurn-off Time toff VBE(off)=-4.3V, RL=30n - 2.0 -
TOSHIBA CORPORATION
- 87-
TOSHIBA TIP29A
TECHNICAL OAT A
HIGH POWER SWITCHING APPLICATIONS. Unit in DDIl
HA~flER DRIVE. PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1U3MAX ¢3.6±U2
SWITCHING.
FEATURES:
• High Collector Power Dissipation : Pe=30W @Tc=25°C
High Collector Current : IC(Dc)=lA(Max.)
High DC Current Gain: hFE=40(Min.) @VCE=4V. Ic=0.2A ~L" .
Complementary to TIP30A L5:.x.1
~
><
2.54 2.54 ;j
1&111
'" d .. ,
~
MAXIMUM RATINGS (Ta=25°e) .-4 .-.
.1.2.3+--t
CHARACTERISTIC SYMBOL RATING UNIT , ::l1
L BASE
3. EMITTER
JEDEC TO 220AB
Collector Current I DC Ie 1 A EIAJ SC-46
I Pulse Icp 3 TOSHIBA 2-10AIA
Continuous Base Current IB 0.4 A Weight : 1. 9g
Collector Power I Ta=25°C Pc
2
W
Dissipation
I Tc=25°C 30
Unc1amped Inductive Load
Energy ES/B 32 mJ

Thermal Resistance. Junction to Case Rth(j-c) 4.17 °C/W
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 °C/W
Maximum Lead Temperature for Soldering 260 °c
Purposes (3.2DD1l from case for 10 seconds) TL
-88-
SEMICONDUCTOR
TOSHIBA TIP29A
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR) CEO IC=30mA, IB=O 60 - - V
Collector Cut-off Current ICEO VCE=30V, IB=O - - 0.3 rnA

Collector Cut-off Current ICES VCE=60V, VBE=O - - 0.2 rnA
Emitter Cut-off Current lEBO VEB=5V, IC=O - - 1 rnA
hFE(2) VCE=4V, IC=lA 15 - 75
Collector-Emitter
Saturation Voltage VCE(sat) IC=lA, IB=125rnA - - 0.7 V
VCE=lOV, IC=O.2A
Small-Signal Current Gain hfe
f=lkHz
20 - -
VCE=lOV, IC=0.2A
Small-Signal Current Gain Ihfe I
f=lMHz
3 - -
Switching Time ITurn-on Time ton lC=lA, IBl=-IB2=100mA - 0.5 - pS
ITurn-off Time toff VBE(off)=-4.3V, RL=300. - 2.0 -
ToaHI_ CORPORATION
-89-
TOSHIBA TIP298
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS Unit in mrn
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD l<1314AX ¢3.6±Q2
SWITCHING.
FEATURES:
High Collector Power Dissipation : PC=30W @Tc=2S"C
High Collector Current : IC(DC)=lA(Max.)
High DC Current Gain: hFE=40(Min.) @VCE=4V, IC=0.2A
Complementary to TIP30B
MAXIMUM RATINGS (Ta=2S"C)

Collector-Base Voltage VCBO 80 V L BASE
Collector-Emitter Voltage VCEO 80 V a COLLECTOR(HEAT SINK)
3. EMITTER
JEDEC TO-220AB
A EIAJ 8C-46
I Pulse ICp 3 TOSHIBA 2-10A1A
Continuous Base Current IB 0.4 A Weight : 1. 9g
Collector Power I Ta=2S"C Pc
2
W
Dissipation
I Tc=2S"C 30
Energy ES/B 32 mJ

Storage Temperature Range Tstg -65 -150 "c
Thermal Resistance, Junction to Case Rth(j-c) 4.17 "C/W
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 "C/W
Maximum Lead Temp.erature for Soldering "C
'or otherwise under any pat~nt or patent rights of TOSHIBA or others. TOSHIBA CORPORATION
-90-
SEMICONDUCTOR
TOSHIBA TIP298
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=30mA, IB-O BO - - V

Collector Cut-off Current ICES VCE=BOV, VBE=O - - 0.2 mA
Emitter Cut-off Current lEBO VEB=SV, IC=O - - 1 mA
DC Current Gain hFE(1) VCE=4V, IC=0.2A 40 - -

hFE(2) VCE=4V, IC=IA 15 - 75
Collector-Emitter
Saturation Voltage VCE(sat) IC=IA, IB=12SmA - - 0.7 V
VCE=IOV, IC=0.2A
i=lkHz
20 - -
VCE-IOV, IC-0.2A
f=IMHz
3 - -
Switching Time ITurn-on Time ton IC-lA, IBI--IB2-100mA - 0.5 - liS
ITurn-off Time toff VBE (ofO--4. 3V, RL~300 - 2.0 -
TOSHIBA CORPORATION
-91-
TOSHIBA TIP29C
TeCHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS Unit in I1I1II
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ~
¢3.6±Cl2
SWITCHING.
!l ~(
xy ~~I·
~ ~
~ ..
~
FEATURES:
0 to
High Collector Power Dissipation : PC=30W @Tc=2s"C
'"
....
~L'
High Collector Current : IC(DC)=lA(Max.)
..
. High DC Current Gain : hFE=40(Min.) @VCE=4V, IC=O.2A
",,'
....
:&
Complementary to TIP30C L5:X.1
0
Jll§..
'"
....
I
2.54 2.54 ~
"'~
tod III
..• ~
MAXIMUM RATINGS (Ta=2s"C) "" n."2.~+-t
CHARACTERISTIC SYMBOL RATING UNIT ~1
L BASE
3. EIoIITTER
JEDEC TO 220AB
Collector Current l DC IC I
A EIAJ SC-46
Continuous Base Current IB 0.4 A Weight : 1.9g
Collector Power I Ta=2s"C Pc
2
W
Dissipation
I Tc=2s"C 30
Unc1amped Inductive Load 32
Energy ES/B mJ

Storage Temperature Range Tstg -65-150 "C
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 "C/W
TL 260
TOSHISA CORPORATION
-92-
SEMICONDUCTOR
TOSHIBA TIP29C
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2s·C)

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=30mA. IB=O 100 - - V
Collector Cut-off Current ICEO VCE=60V. IB=O - - 0.3 rnA

Collector Cut-off Current ICES VCE=lOOV. VBE=O - - 0.2 rnA
Emitter Cut-off Current lEBO VEB=sV. IC=O - - 1 rnA
DC Current Gain hFE(l) VCE-4V. IC*0.2A 40 - -
hFE(2) VCE=4V. IC=lA 15 - 75
Base-Emitter Voltage VBE VCE=4V. IC=lA - - 1.3 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=lA. IB=12srnA - - 0.7 V
VCE=lOV. IC=0.2A
Small-Signal Current Gain hfe f=lkHz
20 - -
VCE=lOV. IC=0.2A
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=lA. IBl=-IB2=100mA - 0.5 - /lS
ITurn-off Time toff VBE(off)=-4.3V. RL=300 - 2.0 -
TOSHISA CORPORATION
-93-
TOSHIBA TIP30
TECHNICAL DATA
SILICON PNP TRIPLE DIFFUSED TYPE
HIGH POWER SWITCHING APPLICATIONS Unit in mm
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ~
¢:l.6 ±Cl 2
SWITCHING. !'t ~r
xy ;jj~. -+ .
~ ..,i
~
FEATURES:
0
High Collector Power Dissipation : PC=30W @Tc=2SoC

'"
....
High Collector Current
~Lo
: IC(DC)=-lA(Max.)
High DC Current Gain : hFE=40 (Min. ) @VCE=-4V, IC=-0.2A
.. Z
H
::Ii
Complementary to TIP29 LMIAX
0
t1
.Qll..
....
I
2.1i. 2.1i4 i
.; .T.~.!::\---1 ~
1&Ul
.., d ..•
MAXIMUM RATINGS (Ta-2S0C)
,
CHARACTERISTIC SYMBOL RATING UNIT ~I
Collector-Base Voltage VCBO -40 V L BASE
Collector-Emitter Voltage VCEO -40 V 2- COLLECTOR(HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO -S V
;rEDEC TO 220AB
Collector Current I DC IC -1 A EIA;r SC-46
I Pulse ICp -3 TOSHIBA 2-10AIA
Continuous Base Current IB -0.4 A Weight : 1.9g
Collector Power Ta=2SoC I Pc
2
W
Dissipation
Tc-2S·C I 30
Energy EsIB 32 mJ
Junction'Temperature Tj lSO ·C
Storage Temperature Range Tstg -6S-1S0 ·C
Thermal Resistance, Junction to Ambient Rth(j-a) 62.S ·C/W
Maximum Lead Temp~rature for Soldering 260 ·C
TOSHIBA CORPORATION
-94-
SEMICONDUCTOR
TOSHIBA TIP30
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-30mA, IB=O -40 - - V
Collector Cut-off Current ICEO VCE=-30V, IB=O - - -0.3 rnA

Collector Cut-off Current ICES VCE=-40V, VBE=O - - -0.2 rnA
Emitter Cut-off Current lEBO VEB=-sV, IC=O - - -1 rnA
DC Current Gain hFE(l) VCE=-4V, IC=-O.2A 40 - -

hFE(2) VCE=-4V, IC=-lA 15 - 75
Base-Emitter Voltage VBE VCE=-4V, IC=-lA - - -1.3 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=-lA, IB=-12srnA - - -0.7 V
VCE=-lOV, IC=-0.2A
f=lkHz
20 - -
VCE=-lOV, IC=-0.2A
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=-lA, IBl=-rB2=-100mA - 0.3 - fJS
~urn-off Time toff VBE(off)=4.3V, RL=30n - 1.0 -
TOBHIBA CORPORATION
-95 -
TOSHIBA TIP30A
TECHNICAL OAT A
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ~ ¢3.6±U2
SWITCHING.
FEATURES:
High Collector Power Dissipation : PC=30W @Tc=25°C
High Collector Current : IC(DC}=-lA(Max.}
High DC Current Gain: hFE=40(Min.} @VCE=-4V, IC=-0.2A
Complementary to TIP29A
..
2.54 2.54 ~
MAXIMur~ RATINGS (Ta=25°C) ~lk~_~.~~

L BASE
Collector-Emitter Voltage VCEO -60 V 2. OOLLEOTOR(HEAT SINK)
3. EIIIITTER
JEDEO TO 220AB
Collector Current I DC IC -1 A EIAJ SO-46
Pulse I ICp -3 TOSHIBA 2-10A1A
Continuous Base Current IB -0.4 A Weight : 1. 9g
Collector Power
Dissipation
I Ta=25°C Pc
2
W
I Tc=25°C 30
ES/B 32 mJ
Energy
Thermal Resistance, Junction to Case Rth(j-c} 4.17 °C/W
Thermal Resistance, Junction to Ambient Rth(j-a} 62.5 °C/W
TOSHIBA CORPORATION
SEMICONDUCTOR
TOSHIBA TIP30A
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2S"C)

Collector-Emitter
Collector Cut-off Current ICEO VCE=-30V, IB=O - - -0.3 riIA

Emitter Cut-off Current lEBO VEB=-SV, IC=O - - -1 rnA
DC Current Gain hFE(I) VCE=-4V, IC=-0.2A 40 - -
hFE(2) VCE=-4V, IC=-lA 15 - 75
Base-Emitter Voltage VBE VCE=-4V, IC=-lA - - -1. 3 V
Collector-Emitter
Saturation Voltage VCE(sat) lC=-lA, lB=-12SrnA - - -0.7 V
VCE=-lOV, IC=-0.2A
f=lkHz
20 - -
VCE=-lOV, IC=-0.2A
Small-Signal Current Gain ) hfe)
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=-lA, lB1=-IB2=-100rnA - 0.3 - "s
trurn-off Time toff VBE (off)=4. 3V, RL=300 - 1.0 -
TOBHIBA CORPORATION
-97 -
TOSHIBA TIP30B
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS . Unit in I!IIlI
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1 0. 3 IIAX ¢:l.6 ±o. 2
SWITCHING.
~.
'1 ~l'
FEATURES: xy i~~I'
~ ~ I'l
High Collector Power Dissipation : PC=30W @Tc=2S"C &d
.-<
High Collector Current : IC(DC)=-lA(Max.)
~L'
High DC Current Gain : hFE=40(Min.) @VCE=-4V, IC=-0.2A
.. "'....;
L5~.1
:E
Complementary to TIP29B 0
t1
0.76 . 1;1
.-<
I
2.54 2.54 ~
"'~
d
I'l III
..• ~
MAXIMUM RATINGS (Ta=2S0C) .-t :/:'l-d+-t
- - ..
Collector-Emitter Voltage VCEO -80 V 2. COLLECTOR(HEAT SINK)
3. EMITTER
JEDEC TO 220AB
Collector Current I DC IC -1
A EIAJ SC-46
Continuous Base Current IB -0.4 A Weight : 1.9g
Collector Power I Ta=2S"C Pc
2
W
Dissipation
J Tc=2SoC 30
Energy ES/B 32 mJ

Storage Temperature Range Tstg -65 -150 "C
Thermal ReSistance, Junction to Ambient Rth(j-a) 62.5 "C/W
TL 260
-98-
SEMICONDUCTOR
TOSHIBA TIP30B
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-30mA, 1B=0 -80 - - V

DC Current Gain hFE(l) VCE=-4V, IC=-O.2A 40 - -

hFE(2) VCE=-4V, IC=-lA 15 - 75
Base-Emitter Voltage VBE VCE=-4V, IC=-lA - - -1.3 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=-IA, IB=-12srnA - - -0.7 V
VCE=-IOV, IC=-0.2A
f=lkHz
20 - -
VCE=-IOV, IC=-0.2A
Small-Signal Current Gain Ihfel f=IMHz
3 - -
Switching Time ~urn-on Time ton IC=-lA, IBI=-IB2=-100mA - 0.3 - IJS
~urn-off Time toff VBE(off)=4.3V, RL=30n - 1.0 -
TOSHIBA CORPORATION
-99-
TOSHIBA TIP30C
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS. Unit in mm
HAMMER DRIVE, PULSE ~10TOR DRIVE AND INDUCTIVE LOAD
SWITCHING.
FEATURES:
High Collector Power Dissipation : Pc=30W @Tc=25·C
High Collector Current : IC(DC)=-lA(Max.)
High DC Current Gain: hFE=40(Min.) @VCE=-4V, IC=-0.2A
Complementary to TIP29C
2.54 2.54 li
MAXHIUM RATINGS (Ta=25·C)
~~d::::b.......
.-i
I!! ~ ~
:-[1 - 2.:l-::r=::--T
CHARACTERISTIC SYMBOL RATING UNIT ;:j!
1. BASE
:l. EMITTER
JEDEC TO-220AB
Collector Current I DC IC -1 A EIAJ SC-46
Continuous Base Current IB -0.4 A Weight : 1. 9g
Collector Power I Ta=25·C Pc
2
W
Dissipation
I Tc=25·C 30
Energy ES/B 32 mJ

TL 260
. The information contained herein is presented only as a guide for the applications of our
TOSHISA CORPORATION
-100-
SEMICONDUCTOR
TOSHIBA TIP30C
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-30mA, IB-O -100 - - V

Collector Cut-off Current ICES VCE=-lOOV, VBE=O - - -0.2 rnA
Emitter Cut-off Current lEBO VEB=-5V, IC=O - - -1 rnA
DC Current Gain hFE(l) VCE=-4V, IC=-0.2A 40 - -

hFE(2) VCE=-4V, IC=-lA 15 - 75
Base-EmitteL Voltage VBE VCE=-4V, IC=-lA - - -1.3 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=-lA, IB=-125rnA - - -0.7 V
VCE=-IOV, IC--0.2A
f=lkHz
20 - -
VCE=-IOV, IC--0.2A
Small-Signal Current Gain Ihfel
f=IMHz
3 - -
Switching Time ITurn-on Time ton IC=-IA, IBI--IB2=-10D,mA - 0.3 - JlS
ITurn-off Time toff VBE(off)-4.3V, RL=30n - 1.0 -
TOSHIBA CORPORATION
-101-
TOSHIBA TIP 31
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS Unit in DUD
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD lCl3MAX ¢3.6±Cl2
SWITCHING. I
!l .M~ ~~ . -4. -
~ ~ ~
~
FEATURES:
High Collector Power Dissipation : PC=40W @Tc=25'C "'....'"
~L'
: IC(DC)=3A(Max.)
.. ,,;
High DC Current Gain : hFE=25(Min.) @VCE=4V, IC=lA H
. Complementary to TIP32 L5:X.1

::Ii
0
Cl76 '"
....
I
.;
2.5<1- 2.5<1- iii
"'~ III
'" d ..• !i
t·1AXIMur~ RATINGS (Ta=2S'C) ~ ±r.1.'!3f----i
3. EMITTER
JEDEC TO 220AB
Collector Current I DC IC 3 A EIAJ SC-<l-6
Continuous Base Current IB 1 A Weight : 1.9g
Collector Power I Ta=2S'C Pc
2
W
Dissipation
I Tc=2S'C 40
Energy ES/B 32 mJ

Storage Temperature Range Tstg -6S-l50 ·C
Thermal Resistance, Junction to Case Rth(j-c) 3.125 'C/W
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 'C/W
The information contained herein is presented only as a guide for the applications 0 our
rights of the third parties which may result from its use. No license is granted by ImplIcatIon
TOSHIBA CORPORATION
-102-
SEMICONDUCTOR
TOSHIBA TIP 31
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. tyPo MAX. UNIT
Collector-Emitter
Breakdown Voltage V(BR) CEO IC= 30mA , IB-O 40 - - V

Emitter Cut-off Current lEBO VEB=SV, IC=O - - 1 rnA
DC Current Gain hFE(l) VCE=4V, IC=lA 2S - -
hFE(2) VCE=4V, IC=3A 10 - SO
Base-Emitter Voltage VBE VCE=4V, IC=3A - - 1'.8 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=3A, IB=37SrnA - - 1.2 V
VCE=lOV, IC=O.SA
f=lkHz
20 - -
VCE=lOV, IC=O.SA
Small-Signal Current Gain Ihie I
f=lMHz
3 - -
Switching Time ~urn-on Time ton IC=lA, IBl=-IB2=100rnA - O.S - pS
ITurn-off Time toff VBE(off)=-4. 3V, RL=30 0 - 2.0 -
TOSHIBA CORPORATION
-103 -
TOSHIBA TIP31A
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS Unit in IIIlll
HAMtlER DRIVE, PULSE ~IOTOR DRIVE AND INDUCTIVE LOAD 1 Cl3MAX ¢3.6±Cl2
SWITCHING.
.c:P.(~
i ~~ . ~. -
4", ~ .,i
~
FEATURES:
High Collector Power Dissipation : Pc=40W, @Tc=25 DC
'"
....
~L' ,
High Collector Current : IC(DC)=3A(Max.)
High DC Current Gain: hFE=25(Min.) @VCE=4V, IC=lA :z.'
Complementary to TIP32A L5:X

~'~
II "'
::Ii
0
'"
....
I
2.54 2.54 i
rlAXIMUM RATINGS (Ta=25 DC)
~~d-l-.I!!
..-1 ... I , ~
=n -2.::i::r---1
Collector-Emitter Voltage VCEO 60 V 2. OOLLECTOR(HEAT SINK)
3. EMITTER
~--------------~~--------4--------4L---------~----4I~J~E~D~E~0__________~T~O~-~2~2~O~A~B~-;
A EIAJ SO-46
Collector Power I Ta=25 DC Pc
2
W
Dissipati.on
I Tc=25 DC 40
Energy ES/B 32 mJ
Junction Temperature Tj 150 DC

Storage Temperature Range Tstg -65 -150 DC
Thermal Resistance, Junction to Case Rth(j-c) 3.125 DC/W
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 DC/W
Maximum Lead Temperature for Soldering DC
TL 260
TOSHIBA CORPORATION
-104-
SEMICONDUCTOR
TOSHIBA TIP31A
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=30mA, IB=O 60 - - V

DC Current Gain hFE(l) VCE=4V, IC=lA 25 - -
hFE(2) VCE=4V, IC=3A 10 - 50
Collector-Emitter
Saturation Voltage VCE(sat) IC=3A, IB=375rnA - - 1.2 V
VCE=IOV, IC=0.5A
f=lkHz
20 - -
VCE=IOV, IC=0.5A
Small-Signal Current Gain Ihfel 3 - -
f=IMHz
Switching Time ITurn-on Time ton IC=lA, IBI=-IB2=100mA - 0.5 - flS

ITurn-off Time toff VBE(off)=-4. 3V, RL=30 (} - 2.0 -
TOSHIBA CORPORATION
-105 -
TOSHIBA TIP31B
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1USMAX ,¢3.6±U2
SWITCHING.
FEATURES:
• High Collector Power Dissipation : PC=40W @Tc=2s·C
• High Collector Current : IC(DC)=3A(Max.)
High DC Current Gain: hFE=2s(Min.) @VCE=4V, IC=IA
Complementary to TIP32B
2.54 2.54 g
N\l~111d
.-. ~
.. ,
·1· 2.~+---t
t')
MAxmur~ RATINGS (Ta=2s·C) ,..:;

3. EMITTER
JEDEC TO-220AB
A EIAJ SC-46
Contin.uous Base Current IB 1 A \Jeight : 1. 9g
Collector Power I Ta=2s·C Pc
2
W
Dissipation
I Tc=2s·C 40
Energy ES/B 32 mJ

-106-
SEMICONDUCTOR
TOSHIBA TIP31B
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25"C)

Collector-Emitter


hFE(2) VCE=4V, IC=3A 10 - 50
Collector-Emitter
Saturation Voltage VCE(sat) IC=3A, IB=375rnA - - 1.2 V
VCE=lOV, IC=0.5A
f=lkHz
20 - -
VCE=lOV, IC=0.5A
Small-Signal Current Gain I hfe I
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=IA, IBl=-IB2=lOOrnA - 0.5 - lAS
ITurn-off Time toff VBE(off)=-4.3V, RL=30n - 2.0 -
-107-
TOSHIBA TIP31C
TeCHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS Unit in tmIl
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ~ ¢:3.6 ±o. 2
SWITCHING.
FEATURES:
High Collector Power Dissipation : PC=40W @Tc=25·C
~L"
High DC Current Gain: hFE=25(Min.) @VCE=4V, IC=lA .
Complementary to TIP32C L5~X.1
0.76
2.54 2.54 ~

~!ldL ....
,-1
I!! 1 ~ ~
::r.-·l . 2·:i::r----1
Collector-Base Voltage VCBO 100 V 1. BASE
Collector-Emitter Voltage "VCEO 100 V 2. COLLECTOR(HEAT SINK)
3. EMITTER
JEDEC TO 220AB
Collector Current I DC IC 3 A EIAJ SC-46
Continuous Base Current IB 1 A Weight : 1. 9g
2 W
Dissipation
I Tc=25·C 40
Unclamped Inductive Load 32
Energy ES/B mJ

Purposes (3.2tm1l from case for 10 seconds) TL
TOSHIBA CORPORATION
-108-
SEMICONDUCTOR
TOSHIBA TIP31C
TECHNICAL DATA

Collector-Emitter

Collector Cut-off Current ICES VCE=lOOV, VBE=O - - 0.2 mA
Emitter Cut-off Current lEBO VEB=sV, IC=O - - 1 mA

hFE(2) VCE=4V, IC=3A 10 - 50
Collector-Emitter
Saturation Voltage VCE(sat) IC=3A, IB=37smA - - 1.2 V
VCE=lOV, IC=O.sA
f=lkHz
20 - -
VCE=lOV, IC=O.sA
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=lA, IBl=-IB2=100mA - 0.5 - I'S
ITurn-off Time toff VBE(off)=-4.3V, RL=30 n - 2.0 -
TOSHIBA CORPORATIDN
-109-
TOSHIBA TIP32
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS. Unit in nun
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD HI3MAX ¢!l.6±Cl2
SWITCHING.
~.
:l .t1:!(~
FEATURES: .~ ~ ~I·
~ ..,~
. High Collector Power Dissipation : PC=40W @Tc=2SoC
'"
....
High Collector Current : IC(DC)=-3A(Max.)
High DC Current Gain : hFE=2S(Min.) @VCE=-4V, IC=-lA
Complementary to TIP3l
~L'
J.o:x.1
' . Z
H
;IIi
0
t1
....
~ I
2.04 2.04 ~
MAXIMUM RATINGS (Ta=2S0C)
"'!i:h. d+---t ~
M
ttl d _. •lll
,•'
~1
1. BASE
Collector-Emitter Voltage VCEO -40 V 2. COLLECTOR (HEAT SINK)
!l. EMITTER
Emitter-Base Voltage VEBO -S V
JEDEC TO 220AB
I Pulse Icp -S TOSHIBA 2-10A1A
ContinuQus Base Current IB -1 A Weight : 1.9g
Collector Power I Ta=2SoC Pc
2
W
Dissipation
I Tc=2SoC 40
Energy ES/B 32 mJ
Junction Temperature Tj ISO °c

Storage Temperature Range Tstg -6S-lS0 °c
Thermal Resistance, Junction to Case Rth(j-c) 3.125 °C/W
TL 260 °c
Purposes (3.2mm from ~ase for 10 seconds)
-110-
SEMICONDUCTOR
TOSHIBA TIP32
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR) CEO IC=-30mA, IB=O -40 - - V

DC Current Gain hFE(l) VCE=-4V, IC=-lA 25 - -

hFE(2) VCE=-4V, IC=-3A 10 - 50
Base-Emitter Voltage VBE VCE=-4V, IC=-3A - - -1.8 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=-3A, IB=-37srnA - - -1.2 V
VCE=-10V, IC=-O.sA
f=lkHz
20 - -
VCE=-10V, IC=-O.sA
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=-lA, IB1=-IB2=-100mA - 0.3 - IlS
'Turn-off Time toff VBE (off)=4. 3V, RL=300 - 1.0 -
TOSHIBA CORPORATION
-lll-
TOSHIBA TIP32A
TECHNICAL OAT A
HIGH POWER SWITCHING APPLICATIONS. Unit in =
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD
SWITCHING.
FEATURES:
High Collector Power Dissipation : Pc c 40W @Tc=25·C
High DC Current Gain: hFE=25(Min.) @VCE=-4V, IC=-lA
Complementary to TIP3lA
2.54 ~
MAXHIUM RATINGS (Ta=25·C)
"'il':h -"d-----1 ~
t")
...:i
d ..
--
2-.
,
~1
1. BASE
3. EMITTER
JEDEO TO 220AB
I Pulse ICp -5 TOSHIBA

Weight : 1. 9g
2-10A1A
Continuous Base Current IB -1 A
2
W
Dissipation
I Tc=25·C 40
Energy ES/B 32 mJ

Purposes (3.2= from case for 10 seconds) TL
TOSHIBA CORPORATION
-112-
SEMICONDUCTOR
TOSHIBA T I P32A
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta-2S"C)

Collector-Emitter
Breakdown Voltage V(BR)CEO IC--30mA, IB-O -60 - - V
Collector Cut-off Current ICEO VCE=-30V, IB-O - - -0.3 rnA

Collector Cut-off Current ICES VCE=-60V, VBE-O - - -0.2 rnA
Emitter Cut-off Current lEBO VEB=-SV, IC-O - - -1 rnA
DC Current Gain hFE(l) VCE=-4V, IC--lA 25 - -
hFE(2) VCE=-4V, IC--3A 10 - SO
Base-Emitter Voltage VBE VCE=-4V, IC--3A - - -1.8 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=-3A, IB=-37SrnA - - -1.2 V
VCE=-lOV, IC=-O.SA
f=lkHz
20 - -
VCE=-lOV, IC=-O.SA
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=-lA, IB1=-IB2=-100mA - 0.3 - p.s
ITurn-off Time toff VBE(off)=4.3V, RL=300 - 1.0 -
TOSHIBA CORPORATION
-113-
TOSHIBA TIP32B
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ~ ¢3.6±Cl2
SWITCHING.
~"*( 12!I ~ . 4· -
~ to~
~
FEATURES:
,
. High Collector Power Dissipation : PC=40W @Tc=25°C
'...."
High DC Current Gain : hFE=25(Min.) @VCE=-4V, IC=-lA
~L' . . ....
:oi
Complementary to TIP3lB L5:X.1
0
t1
....
~~" I
2.54 2.54 ~
1&1 II
to d ." ~
MAXIMUM RATINGS (Ta=25°C) M • r-"2.~+---t
r
Collector-Emitter Voltage VCEO -80 V 2. 0 OLLEOTOR (HEAT SINK)
3. EIoIITTER
JEDEO TO 220AB
Continuous Base Current IB -1 A Weight: 1.9g

Collector Power l Ta=25°C Pc
2
W
Dissipation
I Tc=25°C 40
Energy ES/B 32 mJ
Junction ·Temperature Tj 150 °c

The information cont.iined herein is presented only as a guide for the applications of our
TOSHIBA CORPORATION
-1l4-
SEMICONDUCTOR
TOSHIBA TIP32B
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2s"C)

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-30rnA, IB=O -80 - - V

DC Current Gain hFE(1) VCE=-4V, IC=-lA 25 - -

hFE(2) VCE=-4V, IC=-3A 10 - 50
Collector-Emitter
Saturation Voltage VCE(sat) IC=-3A, IB=-37srnA - - -1.2 V
VCE=-lOV, IC=-O.sA
f=lkHz
20 - -
VCE=-lOV, IC=-O.sA
f=lMHz
3 - -
Switching Time ~urn-on Time ton IC=-lA, IBl=-IB2=-100mA - 0.3 - JlS

p'urn-off Time toff VBE(off)=4.3V, RL=30 0 - 1.0 -
TOSHIBA CORPORATION
-115 -
TOSHIBA TIP32C
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUciIVE LOAD lU3)(AX ¢3.6±U2
SWITCHING. I
FEATURES:
High Collector Power Dissipation : Pc=40W @Tc=25°C
~.
High DC Current Gain: hFE=25(Min.) @VCE=-4V, IC=-lA
: IC(DC)--3A(Max.)
.
H
::Ii
Complementary to TIP3lC ,.,....o
2.54 2.54
..;i
"'~LY;I II ~
MAXIMUM RATINGS (Ta=25°C) ~
'" d
.1'.-dd--t
.• ,
CHARACTERISTIC SYMBOL RATING UNIT , ~l
Collector-Base Voltage VCBO -100 V 1. BASE

3. EMITTER
Emitter~Base Voltage VEBO -5 V
JEDEC TO 220AB
Continuous Base Current IB -1 A Weight : 1. 9g

2
W
Dissipation
I Tc=25°C 40
Unclamped Inductive Load 32
ES/B mJ
Energy
TOSHIBA CORPORATION
-116-
SEMICONDUCTOR
TOSHIBA TIP32C
TECHNICAL' DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. uNIT
Collector-Emitter

Collector Cut-off Current ICES VCE=-lOOV, VBE=O - - -0.2 rnA
Emitter Cut-off Current lEBO VEB=-5V, IC=O- - - -1 rnA
DC Current Gain hFE(1) VCE=-4V, IC=-lA 25 - -

hFE(2) VCE=-4V, IC=-3A 10 - 50
Collector-Emitter
Saturation Voltage VCE(sat) IC=-3A, IB=-375rnA - - -1.2 V
VCE=-lOV, IC=-0.5A
f=lkHz
20 - -
VCE=-lOV, IC=-O.5A
Small-Signal Current Gain lhfe I 3 - -
f=lMHz
Switching Time I Turn-on Time ton IC=-lA, IBl=-IB2=-100mA - 0".3 - ps

I Turn-off Time toff VBE(off)=4.3V, RL=30n - 1.0 -
TOBHIBA CORPORATION
-1l7-
TOSHIBA TIP41
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD lCl!3MAX j1I!3.6±Cl2
SWITCHING.
FEATURES:
High Collector Power Dissipation : PC=6SW @Tc=2S·C
High Collector Current : IC(DC)=6A(Max.}
High DC Current Gain: hFE=lS(Min.} @VCE=4V, IC=3A
Complementary to TIP42
MAXIMur4 RATINGS (Ta=2S·C)

Collector-Emitter Voltage VCEO 40 V a OOLLEOTOR(HEAT SINK)
!3. EMITTER
JEDEO TO 220AB
A EIAJ SO-4.6
I Pulse Icp 10 TOSHIBA 2-10AIA
Continuous Base Current IB 3 A Weight : 1. 9g
Collector Power
Dissipation
I Ta=2S·C Pc
2
W
I Tc=2S·C 6S
Energy ES/B 62.S mJ

Thermal Resistance, Junction to Ambient Jl.th(j-a) 62.S ·C/W
TL 260
TOSHIBA CORPORATION
-118 -
SEMICONDUCTOR
TOSHIBA TIP41
TECHNICAL DATA

Collector-Emitter

Emitter Cut-off Current lEBO VEB=SV, IC=O - - 1 rnA

hFE(2) VCE=4V, IC=3A 15 - 75
Collector-Emitter
Saturation Voltage VCE(sat) IC=6A, IB=0.6A - - 1.5 V
VCE=lOV, IC=O.SA
f=lkHz
20 - -
VCE=lOV, IC=O.SA
Small-Signal Current Gain lhfe 1
f=lMHz
3 - -
Switching Time I Turn-on Time ton IC=6A, IBl=-IB2=0.6A - 0.6 - /.IS
I Turn-off Time toff VBE(off)=-4V, RL=SO - 1.0 -
TOSHIBA CORPORATION
-119-
TOSHIBA TIP41A
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD p13.6±112
~
SWITCHING.
Ii...cD!:::~ ~~ . 4· •
4",
~
FEATURES:
~ to~
High Collector Power Dissipation : PC=6sW @Tc=2s·c
''""'
High DC Current Gain : hFE=ls(Min.) @VCE=4V, IC=3A
Complementary to TIP42A
L5:'X.1
~L' ' . :i
H
:Ii
0
~~
''""' I
~
2.54 2.54 ;j
1&111
t'J d .•• ~
MAXIMUM RATINGS (Ta=2s·C) .-4
,
......
- 1- 2- ~+---1
Collector-Emitter Voltage VCEO 60 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBe 5 V
JEDEO TO 220AB
Collector Current I DC IC 6 A EIAJ SO-46
I Pulse ICp 10 TOSHIBA 2-10A1A
Collector Power ITa=-2s·C Pc
2
W
Dissipation
ITc=2s·C 65
Energy ES/B 62.5 mJ

Thermal Resistance, Juncti,on to Case Rth(j-c) 1.92 ·C/W
TL 260
-120-
SEMICONDUCTOR
TOSHIBA TIP41A
TECHNICAL DATA

Collector-Emitter


hFE(2) VCE=4V, IC=3A 15 - 75
Collector-Emitter
VCE=lOV, IC=0.5A
f=lkHz
20 - -
VCE=lOV, IC=0.5A
Small-Signal Current Gain Ihfe l
f=IMHz
3 - -
Switching Time ITurn-on Time ton IC=6A, IBl=-IB2=0.6A - 0.6 - p.s
ITurn-off Time toff VBE (off)=-4V, RL=5!l - 1.0 -
TOBHIBA CORPORATION
-121-
TOSHIBA TIP418
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD la.3101AX ¢3.6±a.2
SWITCHING.
FEATURES:
High Collector Power Dissipation : PC=6sW @Tc=2s·c
High DC Current Gain: hFE=ls(Min.) @VCE=4V, IC=3A ~[.
Complementary to TIP42B 1.5:X.1
~
2.54. 2.54. ~
~I ~I J ~ ~~
MAXIMUM RATINGS (Ta=2s·C) ~1 3±r-1.-r3-.
CHARACTERISTIC SYMBOL RATING 'UNIT , ~1
L BASE
Collector-Emitter Voltage VCEO 80 V 2. OOLLEOTOR(HEAT SINK)
3. EMITTER
J'EDEC TO 220AB
Collector Current I DC IC 6 A EIAJ' SO-4.6
Continuous. Base Current IB 3 A Weight : 1. 9g

Collector Power Ta=2s·C I Pc
2
W
Dissipation
Tc=2s·C I 65
Unc1amped Inductive Load 62.5 mJ
Energy ES/B

Purposes (3.2mm from case 10 seconds) TL
products. No responsibility is assumed by TOSHlBA for any infringements of patents or other
TOSHISA CORPORATION
or otherwise under any patent or patent ~ghts of TOSHIBA or others.
-122-
SEMICONDUCTOR
TOSHIBA TIP41B
TECHNICAL DATA

Collector-Emitter

Collector Cut-off Current ICES VCE=80V, VBE=O - - 0.4 mA
Emitter Cut-off Current lEBO VEB=SV, IC=O - - 1 mA

hFE(2) VCE=4V, IC=3A IS - 7S
Collector-Emitter
Saturation Voltage VCE(sat) IC=6A, IB=0.6A - - 1.S V
VCE=lOV, IC=O.SA
f=lkHz
20 - -
VCE=lOV, Ic=O.SA
Small-Signal Current Gain J hf'e I
f=IMHz
3 - -
Switching Time ITurn-on Time ton IC=6A, IBl=-IB2=0.6A - 0.6 - ps
ITurn-off Time toff VBE(off)=-4V, RL=SO - 1.0 -
TOSHISA CORPORATIDN
-123-
TOSHIBA TIP41C
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ¢3.6±0.2
~
SWITCHING.
ll..Get ~~ .
FEATURES:
High Collector Power Dissipation : PC=65W @Tc-25'C
Complementary to TIP42C
: IC(DC)=6A(Max.)
High DC Current Gain : hFE=15(Min.) @VCE=4V. IC=3A
~L'
L5M'AX.
xr,
..
~ .,i
'"
....
",'
....
:Ii
..,....
0
d
0.76 I
.<
2.54 2.54- ;j
...
.,N~ 111
..
~
MAXII1UM RATINGS (Ta=2S'C) ~ +1'-1. --

CHARACTERISTIC SYMBOL RATING UNIT ;oJ!
Collector-Base Voltage VCBO 100 V 1. BASE
Collector-Emitter Voltage VCEO 100 V 2. COLLECTOR (HEAT SINlt)
3. EMITTER
JEDEC TO 220AB
Collector Current I DC IC 6 A EIAJ 8C-46
I Pulse ICp 10 TOSHIBA

Weight : 1.9g
2-10AIA
Continuous Base Current IB 3 A
Collector Power Ta-25'C I Pc
2
W
Dissipation
lTc-25°C 65
Energy ES/B 62.5 mJ

Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 'C/W
Maximum Lead Tem~erature for Soldering 260 °c
The information ·contained herein is presented only as a guide for the applications of our
product~. No responsibility is assumed by TOSHIBA for any infringements of patents or other
TOSHIBA CORPORATION
-124-
SEMICONDUCTOR
TOSHIBA TIP41C
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC= 30mA , IB&O 100 - - V

Collector Cut-off Current ICES VCE=lOOV, VBE&O - - 0.4 mA
Emitter Cut-off Current lEBO VEB=SV, ICKO - - 1 mA

hFE(2) VCE=4V, IC=3A 15 - 75
Collector-Emitter
VCE=IOV, IC=0.5A
f=lkHz
20 - -
VCE=lOV, IC=O.SA
f=lMHz
3 - -
SWitching Time ITurn-on Time ton IC=6A, IBI=-IB2=0.6A - 0.6 - itS
ITurn-off Time toff VBE (off)=-4V, RL=S.o - 1.0 -
TOSHIBA CORPORATION
-125-
TOSHIBA TIP42
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1U314AX ¢3.6±U2
SWITCHING.
FEATURES:
~L·· .
High DC Current Gain: hFE=15(Min.) @VCE=-4V, IC=-3A .,.;
H
Complementary to TIP41 Lo:x.1 ::Ii

o
t1
....
J!.ll..
2.04 2.54 ~
~~d-L...
I!!_' ~
MAXIMUM RATINGS (Ta=25°C) .-l
+-1- 2-::i::r--T,
CHARACTERISTIC SYMBOL RATING UNIT gj!
Collector-BaSe Voltage VCBO -40 V
L BASE
3. EMITTER
JEDEC TO-220AB
I Pulse ICp -10 TOSHIBA
Weight : 1. 9g
2-10A1A
Continuous Base Current IB -3 A
2
W
Dissipation
I Tc=25°C 65
Energy ES/B 62.5 mJ

TOSHIBA CORPORATION
-126-
SEMICONDUCTOR
TOSHIBA TIP42
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-30mA, IB-O -40 - - V
Collector Cut-off Current ICEO VCE=-30V, lB=O - - -0.7 rnA

DC Current Gain hFE(l) VCE=-4V, lC=-0.3A 30 - -

hFE(2) VCE=-4V, lC=-3A 15 - 75
Base-Emitter Voltage VBE VCE=-4V, lC=-6A - - -2.0 V
Collector-Emitter
Saturation Voltage VCE(sat) lC=-6A, IB=-0.6A - - -1.5 V
VCE=-lOV, IC=-O.SA
f=lkHz
20 - -
VCE=-lOV, IC=-O.SA
f=lMHz
3 - -
Switching Time ITurn-on Time ton lC=-6A, lBl=-IB2=-0.6A - 0.4 - p.s
ITurn-off Time toff VBE(off)=4V, RL=SO - 0.7 -
TOSHIBA CORPORATION
-127 -
TOSHIBA TIP42A
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1Cl311AX ¢3.6±Cl2
SWITCHING.
~c !~.
~ ~
-4. .
~
FEATURES:
,
High Collector Power Dissipation : PC=6SW @Tc=2S·C '"....'"
]'5~L'
High DC Current Gain: hFE=lS(Min.) @VCE=-4V, IC=-3A
' . ,.;
....
• Complementary to TIP4lA :x.1 :Ii
0
t1
....
I
(176 t
2.54 2.54 ~
N~llr
....1 d _. . , ~
:h. 2.i:t==f
t')
....
MAXIMUM RATINGS (Ta=2S·C)
CHARACTERISTIC SYMBOL RATING UNIT ~
]. BASE
3. EMITTER
Emitter-Base Voltage VEBO-S V
JEDEO TO 220AB
Collector Current 1~_D_C____~__I_C~__~____-_6__~ A EIAJ SO-46
I Pulse ICp -10 TOSHIBA 2-1010.110.
Collector Power I TiI:=2S·C Pc 2
W
Dissipation
I Tc=2S·C 65
Unclamped Inductive
ES/B 62.5 mJ
Energy
Junction .Temperature Tj 150

Storage Temperature Range Tstg -65 -150
CHARACTERISTIC SYMBOL MAX. uNIT
Maximum Lead Temperature fbr Soldering 260 ·C
Purposes (3.2mm from case for 10 seconds)' TL
TOSHIBA CORPORATION
-128-
SEMICONDUCTOR
TOSHIBA TIP42A
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage V(BR)CED IC=-30rnA, IB=O -60 - - V
Collector Cut-off Current ICED VCE=-30V, IB=O - - -0.7 rnA

Emitter Cut-off Current lEBO VEB=-5V, IC=O - - -1 rnA
DC Current Gain hFE(1) VCE=-4V, IC=-0.3A 30 - -

hFE(2) VCE=-4V, lC=-3A 15 - 75
Base-Emitter Voltage VBE VCE=-4V, lC=-6A - - -2.0 V
Collector-Emitter
Saturation Voltage VCE(sat) IC=-6A, lB=-0.6A - - -1.5 V
VCE=-lOV, lC=-0.5A
f=lkHz
20 - -
VCE=-lOV, lC=-0.5A
f=lMHz
3 - -
Switching Time
I Turn-on Time ton lC=-6A, lBl=-IB2=-0.6A - 0.4 - itS
I Turn-off Time toff VBE(off)=4V, RL=50 - 0.7 -
TOSHIBA CORPORATION
-129-
TOSHIBA TIP428
TECHNICAL DATA
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ID.3I4AX ¢3.6±D.2
SWITCHING.
FEATURES:
• High Collector Power Dissipation : PC=65W @Tc=25·C
High DC Current Gain: hFE=15(Min.) @VCE=-4V, IC=-3A ~L" .
Complementary to TIP4lB 1.5:x.1
~
2.54 2.54 i
~~d
..4 I!!
.L~ .';-1 ,~
=n -2.:3::r---t
1. BASE
3. EMITTER
JEDEC TO 220AB

Collector Power ITa=25·C Pc
2
W
Dissipation
ITc=25·C 65
Unclamped Inductive Load 62.5
ES/B mJ
Energy
TOSHIBA CORPORATION
-130-
SEMICONDUCTOR
TOSHIBA TIP428
TECHNICAL DATA

Collector-Emitter
Collector' Cut-off Current ICEO VCE=-60V, IB=O - - -0.7 rnA

DC Current Gain hFE(l) VCE=-4V, IC=-0.3A 30 - -

hFE(2) VCE=-4V, IC=-3A IS - 7S
Collector-Emitter
Saturation Voltage VCE(sat) IC=-6A, IB=-0.6A - - -1.5 V
VCE=-lOV, IC=-O.SA
f=lkHz
20 - -
VCE=-lOV, IC=-O.SA
f=lMHz
3 - -
Switching Time ITurn-on Time ton IC=-6A, IBl=-IB2=-0.6A - 0.4 - IlS
ITurn-off Time toff VBE(off)=4V, RL=Sn - 0.7 -
TOSHIBA CORPORATION
-131-
TOSHIBA TIP42C
TECHNICAL DATA
HIGH POWER SWITCHING APPLICATIONS. Unit in IIIlII
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD 1 0. 3 MAX ¢3.6±o.2
SWITCHING.
FEATURES:
. High Collector Power Dissipation : PC=6SW @Tc=2S'c
~( 1--1iI ~ .
, ~ ..,~
III
....
~.
~L'I ..
High DC Current Gain : hFE=lS(Min.) @VCE=-4V, IC=-3A
.;
....
:Ii
0
Complementary to TIP4lC l.5:X ~
0ili'6 I
~
2.5~ 2.54 ~
"'~
..,
d III
..• ~
r1AXII1UM RATINGS (Ta=2S'C) ..-l :h -2-3::1---1
---

l. BASE
Collector-Emitter Voltage VCEfl -100 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
JEDEC TO 220AB
A EIAJ SC-46
I Pulse ICp -10 TOsHIBA 2-10AIA
Continuous Base Current- IB -3 A Weiget : 1.9g
Collector Power ITa=2S'C Pc
2
W
Dissipation
ITc=2S'C 65
ES/B 62.5 mJ
Energy
Purposes (3.2111l11 from case for 10 seconds) TL
TOSHIBA CORPORATION
-132-
SEMICONDUCTOR
TOSHIBA TIP42C
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS
Collector-Emitter
Breakdown Voltage V(BR) CEO IC=-30mA, IB=O -100 - - V

Collector Cut-off Current ICES VCE=-IOOV, VBE=O - - -0.4 rnA
Emitter Cut-off Current lEBO VEB=-sV. IC=O - - -1 rnA
DC Current Gain hFE (1) VCE=-4V, IC--0.3A 30 - -

hFE(2) VCE=-4V, IC=-3A 15 - 75
Collector-Emitter
Saturation Voltage VCE(sat) IC=-6A, IB=-0.6A - - -1.5 V
VCE=-IOV, IC=-O.sA
f=lkHz
20 - -
VCE=-IOV, IC=-O.sA
f=IMHz
3 - -
Switching Time ITurn-on Time ton IC=-6A, IBl=-IB2=-0.6A - 0.4 - p.s
ITurn-off Time toff VBE(ofi)=4V, RL=sn - 0.7 -
TOSHIBA CORPORATION
- 133-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR TIP120
(DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. Unit in nnn
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ¢3.6±0.2
DRIVE APPLICATIONS. ~
V~
/< 'f-' ~~.
FEATURES: ~ ~
'"
'"
....
IT
~C
High Collector Current : IC{DC)=5A{Max.)
High DC Current Gain: hFE=lOOO{Min.) @VCE=3V, IC=3A ...
H
:>l
Complementary to TIP125 l.5MAX
0
t1
....
0.76 I
2.54, 2.54, ~
51~~1
~
j
,
r,1AXIMUll RATINGS (Ta=25°C) ~I
l. BASE
CHARACTERISTIC SYMBOL RATING UNIT 2. COLLECTOR (HEAT SINK)
3. EMITTER
Collector-Base Voltage VCBO 60 'V
J'EDEC TO 220AB
Collector-Emitter Voltage VCEO 60 V EIAJ' SC-4,6
Emitter-Base Voltage VEBO 5 V TOSHIBA 2-10AIA
Col1eetor Current I DC IC 5
A Mounting Kit No. AC75
Weight : 1.9g
I Pulse ICp 8
Cont'inuous Base Current IB 0.1 A EQUIVALENT CIRCUIT
Collector Power
Dissipation
l Ta=25°C Pc
2
W r- _____ C~~lC::~,
I Tc=25°C 65
Energy ES/B 50 mJ
BASE
'~'
I
I
I
I
I
I
I :::::5kO :::::2000 I
Junction Temperature Tj 150 °c I I
Storage Temperature Range Tstg -65 -150 °c L --------.t.---' EMITTER
Thermal Resistance, 'Junction to Case Rth(j-c) 1. 92 °C/W
TL 260 °c
Purposes (3.2nnn from case for 10 seconds)
products, No responsibility is assumed by TOSHIBA for any infringements of patents or other
rights of the third parties which may result from its use, No license is granted by implication
or otherwise under any patent or patent rights of TOSHIBA or others, TOBHIBA CORPORATION
-134-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS(Ta=25°C)
Collector-Emitter
Breakdown Voltage VBR(CEO) IC=30mA, IB=O 60 - - V
Collector Cut-off Current I CBO VCB=60V, IE=O - - 200 I1A
Collector Cut-off Current I CEO VCE =30V, IB=O - - 0.5 mA

hFE(2J VCE=3V, IC=3A 1000 - -
Base-Emitter Voltage VBE VCE =3V, IC=3A - - 2.5 V
Collector-Emitter VCE(sat)(l) IC=3A, IB=l2mA - - 2
V
Saturation Voltage
VCE(sat) (2) IC=5A, IB=20mA - - 4
IC=3A
Switching Time
Turn-on Time ton
IBl=-IB2=l2mA - 1.5 - IJS
VBE(off)=-5V
Turn-off Time toff
RL=lOO - 8.5 - IJS
TOSHIBA CORPORATION
-135-
SEMICONDUCTOR
TOSHIBA TIP120
TECHNICAL DATA
Ie - VeE Ie - VeE
6 6
I I COMMON EMITTER COMMON EMITTER
----
3 5
L4 1.2 1.0 To= 25""C
<' 5
Cl8 I To = 100""C
,......
- r-
~
'/ .- Cl8
~ - t-- I.--- !- Cl6 ,!!;2
0 0 r- [ -
~
H
/1/ f- Cl6 H
I---" !-
Cl5 - t--
4
...z 4
fI.,- ...
'"
[;j
'"
0
:3
,-
.-
,...... l- f-
.- ,...... f-r-
,...... l- f-
Cl4
Cl:3
'"'"
~
0
:3
If,
fL b--"
V ~
I-"""" I-
-- - ~
........ I--- r-
Cl2
r/ l.-- I-
..."'
0
0
'"
..:l
..:l
2
1
~ - r- IB- Cl2mA "'...
0
0
'"
..:l
2
1
IB-CllmA
1
1..1
0
0 I I ..:l
0
0
1
a I a 0 I ..1
a
a 2 4 10 6 8 12 14 a 2 4 10 12 614 8
COLLECTOR-EMITTER VOLTAGE VCE (v) COLLECTOR-EMITTER VOLTAGE VCE (v)
Ie - VeE
6
I COMMON EMITTER 50000
COMMON EMITTER
<' 5.0 4.5 4.0 I Tc=-55""C :30000
5 VCE 3V
~
0
V- I-' I--" .... ~;.. ~
...... I--" f-"""
2.5
'"
i>.
~""
.Q
H
4 I---' ,...... F- ~ r-- r-- 10000 ~
...z .....- I--'" l- j...-1"
I--- I--- '~"
H
()O
'"
[;j :3 I---" ...... I-- f-r- :"4 5000
qY ~
r.,..1- I-- f- r- 1.0 ... :3000
0/ ';.'1
'"
0
I--- I- ~ 1li
..."'
0
2
I--- f- ':;'6
r-- r--
~ 1000
LV 1/'0'0 .......
0
Cl4 r-- r-- 0
'"
..:l
..:l
0
1
r- IB Cl2mA
0
A 500
0
1 1 0 200 IL' Jl
2 4 10 12 146 8 Cl03 Cll Cl3 1 3 10 :30
COLLECTOR-EMITTER VOLTAGE VCE (v) COLLECTOR CURRENT IC (A)
VCE(sat) - Ie VBE(sat) - Ie
5
3
IC/IB 250
...'"
o~
Hi> IC/IB=250
-
~
01~ 1
TO=-55""C ~ .....:'" ..,.
~
OJ~ Cl5
... '"
gj~ Cl3 To 55"C
.,,"25 ...
1
Cll
100
II
Cl:3 1 :3 10 :30
n
H
OJ..:l
iii§:
Cll
Cl05
Cl03
Cl03 Cll
1-_ ."25
100
Cl3 1
-- f-:
3 10 :30
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
TOSHI_ CORPORATION
-136-
SEMICONDUCTOR
TOSHIBA TIP120
TECHNICAL OAT A
VCE(sat) - Tc
3: 5 COMMON EMITTER
1 /
COMMON EMITTER
VCE=3V
.5f 4
1/ I I I I I I
... I II I I
''"" J 1:;1
§
0
IX:
...
0
&l
3
2 "
"I
II
:u
1/
~f
'"
II
''"P/
I
t:=:
- IB= 20mA,
12
2
IC =5A
r--
r-
3
1
f=
t-
H
H
0 A J 1 I
0
o VI V V I I
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -80 -40 o 40 80 120 160
BASE-EMITTER VOLTAGE VBE (V) CASE TEMPERATURE To (t)
IC L (UNCLAMPED INDUCTIVE LOAD)

.:) 20
COMMON EMITTER o
H VCC= 20V
VCE=3V
10 RBB2 = 100.{).
To = 25 t
3.2
Bee Figure 2
"'<"
5
~ 2.4 3 ~> lUll

""8,,, r-.,'IJ.r I I
........
-
o So
po !-- r---
........ f:::" ::- t:- IC =5A
...iii
...
1.6
I"- -. r- r-
"-
-. r-
H -. -. t- 3
1
~ 0.8 1
0.5
'"
iti'" o
-80 -40 o 40 80 1m 160 3 10 30 100
CASE TEMPERATURE To ("C) UNCLAMPED INDUCTIVE LOAD L (mH)
Pc - Tc Pc - Ta
70 3.5
IX: IX:
...
0
0",
~
60
Rth(j-o)";; 1.92"C/W
...
0
0",
~
3.0
Rth(j-a)";; 62.5 "C/W
"'~
H
"'~
H
H 0 H 0
OP< 50 oP< 2.5
0 0
m
"''''
00
40 '"0 0
"'''' 2.0
"'H "'H ......
"' ...
H<
30
z'"
H<
... P< 1.5
"'P<
ZH ZH .......
om 0'"
om
::;A
'"
H 20
" o~
::;A
1.0
~~ 10
" ~a 0.5 .......
<0
::;P<
"I" <0
::;P< " .......
20 40 60 80 100 120 140 160 00 20 40 60 80 100 120 140 160
CASE TEMPERATURE To (t) AMBIENT (Free-Ai r) TEMPERATURE Ta ("e)
TOSHIBA CORPORATION
-137 -
SEMICONDUCTOR
TOSHIBA TIP120
TECHNICAL DATA
SAFE OPERATING AREA

~r-~r-~"~~--r-~rr~~~
10 10 LI. JpUH~)*
10 MAX. (CONTINUOUS)
L III ~
U' l-t
00 •
r----
I
H
o
5~::+=~~++++~~~=+=t~~~~~·tl==~
3 "'0"",
I--+-+-+-++H+I ?> 0,6"\~\-+-+-1-H-H+---l
I--+--++++++'H- 0 ~ ~'cf--+-H++-I+---I
%?>"
n5~*
1 ~~~~~~!~~~c>~v"~'?t-~'tml~~
SINGLE NONREPETITIVE
PULSE Tc = 25"C
OURVES MUST BE DERATED
LINEARLY WITH INOREASE
IN TEMPEHATURE.
nl.~__~~~LU~__-L-L-L~~~~
1 3 10 30 100
OOLLEOTOR-EMITTER VOLTAGE VCE (V)
IB
MONITOR
TUT VOE
r-- - - - - - - - , MONITOR
I I
VIN
(PULSE)
Cl
o
....
II
of
Voc=i=30V
(A) The VIN waveform is obtained by using amplifier circuit and the signal source
is supplied by generator with the following characteristics:
tr,tf<lSns, tw=20ps, Du:S:l%
(B) VIN, RBBl and RBB2 are varied to obtain desired base current levels.
Figure 1. SWITCHING TIME MEASUREMENT CIRCUIT

TUT
r - ------, IC,VOE lA
RBBl I
I
I
MONITOR
vIN I
10
( PULSE) Cl I I 0
0
I I
....0 I I
II IL _ _ _ _ _ _ _ _ I L=100mH
~ _ J VCER(SUS)
'"
0::
Vee=20V
VeE
20V
VOE(sat)
Input pulse width is increased until ICp=lA.
Figure 2. INDUCTIVE LOAD SWITCHING TEST
TOBHIBA CORPORATION
-138-
TOSHIBA TRANSISTOR
TOSHIBA SEMICONDUCTOR TIP 1 2 1
(DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. Unit in nun
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD
~ ¢3.6±0.2
DRIVE APPLICATIONS.
~. /' b(~
~I ~I .
~
FEATURES:
/< 1/ :;; .,~
High Collector Power Dissipation : PC=65W @Tc=25°C '"
rl

~L
: IC(DC)=5A(Max.)
",.
High DC Current Gain: hFE=lOOO(Min.) @VCE=3V, IC=3A H

:0;
0
Complementary to TIP126 L5MAX. O'l
0.76
rl
i
2.54 2.54 ~
'111£1.i-~1..1~+--t ~
.,
rl
d
...
~I
T
MAXIMUM RATINGS (Ta=25°C) 1. BASE

CHARACTERISTIC SYMBOL RATING UNIT 2. OOLLEOTOR (HEAT SINK)
3. EMITTER
JEDEO TO 220AB
Collector Emitter Voltage VCEO 80 V EIAJ SO-46
Emitter-Base Voltage VEBO 5 V TOSHIBA 2-10A1A
Mounting Kit No. AC75
A Weight : 1.9g
I Pulse ICp 8
Continuous Base Current IB 0.1 A EQUIVALENT CIRCUIT
2
W r ______ O:~L~~::,
Dissipation
I Tc=25°C 65
I
."~
I
BASE
Unclamped Inductive Load I
ES/B 50 mJ I I
Energy
I
I
I
• I
I
I
---J,- __
L - -- - -- J
EM ITTER
Purposes (3.2nun from case for 10 seconds) TL 260 °c
-139-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25'C)

Collector-Emitter
Breakdown Voltage VBR(CEO) IC=30rnA, IB=O 80 - - V
Collector Cut-off Current I CBO VCB =80V, IE=O - - 200 p.A
Collector Cut-off Current ICED VCE=40V, IB=O - - 0.5 rnA

hFE(2) VCE=3V, IC=3A 1000 - -
Collector-Emitter VCE(sat) (1) IC=3A, IB=12rnA - - 2
V
Saturation Voltage
VCE(sat) (2) IC=5A, IB=20rnA - - 4
IC=3A
Turn-on Time ton IBl=-IB2=12rnA - 1.5 - p's
Switching Time
VBE(off)=-SV
Turn-off Time toff RL=lOO - 8.5 - p.s
TOSHIBA CORPORATION
-140-
SEMICONDUCTOR
TOSHIBA T , P121
TECHNICAL DATA
IC - VCE IC - VCE
6 6
---------
I I I COMMON EMITTER I I COMMON EMITTER
:;: L4 1.2 1.0 Tc = 25'C :;: 5
0.8 I Tc=100"C
5
.....
~ ....... ........ ~-
-----
0
0.8 I..-+- r- - 0
0.6 ;> - -
H
1,/ ~ 0.6
- -
H
4 ..... ~
...z
-
4
...
- L ,,'"
- -
0.5 0.3
z rt.~ ........
ty .....
- --
::l'" §'"
~ 0.4
.....
0.2 - -
-
3
-
3
0.3 .....
..'"
0
0
E-<
2
,.. -
r/
IB-0.2 mA
I
- ....
D
0
2
IB=o.lmA
I
0 0
'"
H I '"
H 1 I
H H
0
0
I I 0
0
I I
o J o I o o I
o 2 4 6 8 10 12 14 c 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE
6
I I COMMON EMITTER 50000
OOMMON EMITTER
3 Tc=-55"C
-- --- -
5.0 4.5 4.0
0
5
i.-": ...-: ..... ...I---"K ~ <0 r- 2.5'
'"
30000
VOE=3V
..... "'" -
H
~v
...z 4
~o - - 10000
::l'" 3
r....--
~
I-"
~ I-" ;: - - ..i"l
0 5000
..;>
"U
~q.~
~- <\~
3000
f- f-
.
'"
0
0
E-<
2
----
.- ~
1.0
0.6 - r-
E-<
z
::l'" 1000 /
"
I,-y,':>
0 - r- '"
0
'"
H
H
0
0.
IB 0.2mA r- 0
A 500
0
o I o I V I
o 2 8 10
4 12 14 0.1 0.3 3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V) OOLLECTOR OURRENT 10 (A)
VCE(sat) - IC VBE(sat) - IC
z 10 5
:::... 5
COMMON EMITTER
OOMMON EMITTER
Iu/IB 250
~> 3
IO/IB= 250
.....
"'~
"'~
+->
...'" "
~
...
~
ill>
D
~
'"
m
1
0.5
0.3
Tc = -55'C
" 25
-... Tc 55"C
1-"100 ,-::f::
rb
0
~
...
DO
..
"'HH
HE-<
'" 0.1 II ~:25
100
00
0> o.°aoo 0.1 0.3 1 3 10 30 0.1 0.3 1 3 10 30
COLLECTOR CURRENT IC (A) OOLLECTOR CURRENT IC (A)
TOSHIBA CORPORATION
-141-
SEMICONDUCTOR
TOSHIBA TIP121
TECHNICAL DATA
VCE(sat) - Tc
10
~ 5 COMMON EMITTER '...."
0
H COMMON EMITTER
1 I
VCE =:3V ~> 5
H
0
1 I I D~
4,
I II 1/ :;: :3 I
.... "'~ .., I I
''"" I ,vI
:3 ....~ ~ t--- ......;
0
~ ..,~I '"
Ii
1f '"
':'1 ....HO
~>
'"
~
1
IB= 20mA • IC=5A
@j
2
/:1 II II .. 12 - 3
f=
=
I
....0
V 0
'" 0.5 2 1 ~
'"
~
~
0
1
)I 1 1 ~~
....
~.... I I
~~
0 VI 1/ / 00 I I
0. 8 1.2 1.6 2.0 2.4, 0> 0.2
().4, 2.8 -80 -4,0 o 4,0 80 120 160
BASE-EMITTER VOLTAGE VBE (V) CASE TEMPERATURE To ("C)
IC L (UNCLAMPED INDUCTIVE LOAD)

3:o 20
E 4.0
COMMON EMITTER
VCE= :3V H
VCC = 20V
10 RBB 2= loon
.... To = 25'C
i
o
5
3
~
see Figure 2
I
...... r- @j
....o <<1"'60 II
...... t:-- r--."'.r r--
- -
t- IC=5A
r- h- I- I-- -r- ~o 1
:3 o
I- '-
1
-4,0 o 4,0 80 100 160 :3 10 30 100

CASE TEMPERATURE To ("C) UNCLAMPED INDUCTIVE LOAD L (mH)
Pc - Tc Pc - Ta
70 3.5
Rth (j -0) .,;; 1.9 2"C/w Rth (j -a) .,;; 6 2.5 'C/W
......
'\ ......
" '\ r......

I'
'\ t-....
20 4,0 60 60 100 120 14,0 160 20 4,0 60 80 100 120 14,0 160
CASE TEMPERATURE To ("C) AMBIENT (Free-Air) TEMPERATURE Ta ("C)
TOSHIBA CORPORATION
-142-
SEMICONDUCTOR TIP121
TOSHIBA
TECHNICAL DATA
SAFE OPERATING AREA

20
I 11111111
10 IC MAX. (PULSED)'"
I II
==
~
<>:
~
IC MAX. (CONTINUOUS) ~~<i'°Ot:
5
0
~.,.==
~'"
H
... 3
.". '?<>.\
""i>1gj c"'~
'.".,..., ~
"'0\'O~
'"
0
0:
1
...
0
0 0.5 II! SINGLE NONREPETITIVE
i>1
>< PULSE Tc 25'(;
><
0 0.3
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.1
1 10 30 100
IB
MONITOR
TUT VCE
r---------, MONITOR
RBB1 I I
(PU~~~)o---JWr---~~~I~~~ :
I
I
c:o
IL _________ JI ....
II
.t
VCC*30V
t r .tf<15ns. tw=20tlS. Du~l%
(B) VIN. RBB1 and RBB2 are varied to obtain desired base current levels.
TUT
r---------.., IC. VCE lA
I I
I MONITOR IC
VIN
(PULSE) o
L=lOOmH
VCER(SUS)
20V
VCC=20V - - - VCE(sat)
TOSHIBA CORPORATION
-143 -
TOSHIBA TRANSISTOR
(DARLINGTON POWER)
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ,03.6±U2
~
DRIVE APPLICATIONS.
.
~
-/~
I,
~ ~I r-~I ><
FEATURES: '" ;I
High Collector Power Dissipation : PC a 6sW @Tc=2s·C '"'"
.-t
High Collector Current : IC(DC)=sA(Max.)

High DC Current Gain: hFE=lOOO(Min.) @VCE=3V. IC=3A
Complementary to TIP127
~C ,,;
H
:II
0
L5MAX
U76
'"
.-t
I
2.54 2.54 ~
lL1ft11
::l .....
·1· 2·3·l
...r-
~I
T
MAXIMUM RATINGS (Ta=2s·C)
L BASE
CHARACTERISTIC SYMBQL RATING UNIT 2. COLLECTOR (HEAT SINK)
3. EMITTER
JEDEC TO 220AB
Collector Emitter Voltage VCEO 100 V EIAJ SC-46
Emitter-Base Voltage VEBO 5 V TOSHIBA 2-10A1A
Mounting Kit No. AC7s
A Weight : 1.9g
I Pulse ICp 8
EQUIVALENT CIRCUIT
Continuous Base Current IB 0.1 A
Collector Power I Ta=2s·C 2
COLLECTOR
Dissipation
I Tc=2s·C
Pc
65
W
r - - - - - -- -
I
~---,
~5~
I
Unclamped Inductive Load BASE
I
Energy ES/B 50 mJ I I
I I
I I
Junction Temperature Tj 150 ·C I I
Storage Temperature Range Tstg -65-150 ·C L.--------i--...J

EMITTER
Thermal Resistance, Junction to Case Rth(j-c) 1. 92 ·C/W
TL 260
-144-
TeCHNICAL DATA

Collector-Emitter
Breakdown Voltage VBR(CEO) IC=30mA, IB=O 100 - - V
Collector Cut-off Current ICBO VCB=lOOV, IE=O - - 200 /.lA
Collector Cut-off Current ICEO VCE =50V, IB=O - - 0.5 mA


hFE(2) ·VCE=3V, IC=3A 1000 - -
Collector-Emitter VCE(sat) (1) IC=3A, IB=12mA - - 2
V
Saturation Voltage
VCE(sat) (2) IC=5A, IB=20mA - - 4
IC=3A
Switching Time
Turn-on Time ton IBl=-IB2=12mA - 1.5 - /.ls
Turn-off Time toff VBE(ofO=-5V - 8.5 - /.lS

RL=lOO
TOSHIBA CORPORATION
-145-
SEMICONDUCTOR
TOSHIBA TIP122
TECHNICAL DATA
Ie - VeE Ie - VeE
6 6
I
COMMON EMITTER I I COMMON EMITTER
-- -
1.4 1.2 1.0 Tc=25'C <' Cl8 I To = 100"(;
3
-- --
5
k-' ......
5 '-"
:.,..1' L- .1 Cl8 ...l- Cl6 I- ~1i
Cl6 I- f- ...... - l - ~ r- r-
- -----
0 0
H
4 IL--" L- t - I- ' -
H
4 ~ 2:
...
Z rll--" I-- ~ ...
Z
II, I-""" I- Cl3
1'1
I---' L- Cl4 1'1
tv: I---' I-
~
3
I-""" i-- Cl3 ~
3
V- I--'"' ...... ....
Cl2 t- t-
0 0
.,.
0:;
...
0
..,..,~
2
1
/'
Ir- I-- - IB- Cl2mA
I
f-
...~
..,..,1'1
0
2
1
If"
l- I-""
IB-Cl1mA
I
I
0
0
I I I 0
0
JI
o J 0 I I o I 0
o 2 10 12 14
6 8 02468101214
COLLECTOR-EMITTER VOLTAGE VCE (v) COLLECTOR-EMITTER VOLTAGE VCE (V)
Ie - VeE
6
I I
I COMMON EMITTER 50000
COMMON EMITTER
TC=-55'C
3 5.0 4.5 ·4.0 30000
0
5
i;": ~ I---' ... H
~ 2.5 kt""
VCE 3V
H
...z 4 J.~ i.--' L--' I-"'""

[....0 ...... L--' ~
....- '"io
f..-
l- I-
Z
10000
.c.,
-
;;'4 l- I-
~ ~ ......
5000 0"
3 I-- I-- ;;;
H
~); <0
D
0 l- I-"" I-- I-- I--
t- 1.0 ... 3000
~ ~u
~
.... 1- I--t
0:;
...
0 2
l- i-
Cl6 l- t-
~ 1000
LV II ",, ,
/
..,..,
0
1'1
1
·J:.4 l- f- o
500
0 IB Cl2mA f-
0
o I 0 0 1/
o 2 4 10 12 14
6 8 Cl1 Cl3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (v) COLLECTOR CURRENT IC (A)
VeE(sat) - Ie
10 VBE(sat) - Ie
z 5
o COMMON EMITTER
...~£ :
3 COMMON EMITTER
IC/IB 250
Ic/IB= 250
-
_~nll
~--;; TC=-55'C I-~
1
gj ~ 1 -1M!' co:
... ~
~ ~ 0. 5 Tc 55'C
~> Cl 3 " 25
'\J.OO
d:
o
,.........
"'1'1
..,~~... 0. 1 II S;25
..,.., Cl05
Cl03
100
00 Cl05 Cl03 Cll Cl3 10 30
0> Cl03 Cl1 Cl3 3 10 30 3
COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A)
TOBHIBA CORPORATION
-146-
SEMICONDUCTOR
TOSHIBA TIP122
TECHNICAL DATA
VCE(sat) - Tc
10
...'"
0
3 5 COMMON EMITTI!lR
I I
H COMMbN EMITTI!lR
0
VCE= :3V 02:;:- 5
H
4
II II I ...;;j~
o~
... I I I ., :3
1 1
~ :3
I [..)1 ~
~
w
gj
~t '"r;f ''""I ~,....
... ~ IB=20mA. IC =5A
0
... '" r-
0
...'"
0
2 .::,
Ii I
II
iii>
H
I
0
1
12 t-- :3
=
0
'"
..< 1 II 'Oc
" '"
0
...
0.5 2
t-- 1 -
..<
0 /I I J "'-<
..<E-< ~ J
0
VI V / ..<..<
00 I I
0.4 0. S 1.2 1.6 2.0 2.4 2.S 0> 0.2
00 -40 0 40 SO 120 160
BASE-EMITTER VOLTAGE VBE (vl CASE TEMPERATURE To eel
~ IC L(UNCLAMPED INDUCTIVE LOAD)

~ 20
£ 4.0
COMMON EMITTI!lR o
H
VCC = 20V
VCE=:3V
10 RBB2= 1000
To = 25·C
3.2
5 see Figure 2
2.4 :3 1>.-- I I I II
r- lJ",so II
r-
1.6
r-.: t:- t:::: l:::- I-- I- IC =5A r--iliJ r--
r- I-- ;::: l - t- r--
r-- I-- ,.... :3
o.S 1
0. 5
o-00 o 40
O. :3
1 :3
80 120 160 10 30 100
CASE TEMPERATURE To eel UNCLAMPED INDUCTIVE LOAD L (mR)
Pc - Tc Pc - Ta
70 3.5
Rth (j 1 -s; 1.92"C/W Rth (j -a 1 -s; 6 2.5 "C/W
i§
E-I.-... 60
-0
'o~~
" 3.0
~e "'~
..<
c3 0 50 (3 0 2.5
op< 0P<
g; Z 40
00
OH r-..
"'~ ~
...
30
ZH ......
oro
o ~ 20
'\
~~ "
,,~
;i~
10
'\
1,\
" '"
o
o 20 40 60
CASE TEMPERATURE
00 100 120
To eel
140 160 20 40 60
AMBIENT(Free-Air) TEMPI!lRATURE
ilO 100 120 140
Ta
" eC)
160
TOSHIBA CORPORATION
-147-
TOSHIBA
TECHNICAL DATA
SAFE OPERATING AREA

20
I 11111111
10 IC MAX. (PULSED),.
I I II
<To ~ I
3: 5
IC MAX. (CONTINUOUS) f= o
o
r--
r--
~.-
0
H
-00 "\1
... 3
'"
IZl 'i~~
ffi "'~
"Ii'6'.1,
0 1 (> '4>
~
...
0
0 U5 ,. SINGLE NONREPETITIVE
IZl PULSE Tc=25"C
H
H
0
U3
IN TEMPERATURE.
Ul
1 3 10 30 100
IB
MONITOR
TUT VCE
~
.---------, MONITOR IBl
RBBl I
VIN I IB2
(PULSE) r
I
c:o ton
I
I ....
L _________ J I II
H
900
~
VCC*30V
tr,tf <lSns. tw=20l's, Du :5:1%
(B) VIN, RBB1 and RBB2 are varied to obtain desired base current levels.
TUT
r__---------
r
. .r IC' VCE x - - - - 1A
VIN I MONITOR
(PULSE) c:o o
o
....
II L=100mH
1-1--- VCER(SUS)
~ 20V
VCC=20V ---VCE(sat)
TOSHIBA CORPORATION
-148-
TOSHIBA TRANSISTOR
TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE
(DARLINGTON POWER)
HAMMER DRIVE, PULSE ~lOTOR DRIVE AND INDUCTIVE LOAD
DRIVE APPLICATIONS. -----
1U3MAX. ¢3.6±U2
FEATURES:
Jj ~[ i~~l·
~ ~
'"ul
High Collector Power Dissipation : Pc=65W @Tc=25°C rl
IT
~C
High DC Current Gain: hFE=lOOO(Min.) @VCE=-3V, IC=-3A "'.....:
::01
0
Complementary to TIP120 1.5 MAX
U76
'"
rl
I
.-...~
2.54
1llffl r
2.54
'" d . I
.-1 •
··1-2·3 -
~I
T
MAXIMUM RATINGS (Ta=25°C) 1. BASE

3. EMITTER
J"EDEC TO 220AB
Collector-Emitter Voltage VCEO -60 V ErA.T 8C-46
Emitter-Base Voltage VEBO -5 V TOSHIBA 2-10AlA
Collector Current I DC IC -5 A
Weight : 1. 9g
I Pulse ICp -8
Continuous Base Current IB -0.1 A
Collector Power
Dissipation
I Ta=25°C Pc
2
W
I Tc=25°C 65
ES/B 50 mJ
Energy
Thermal Resistance, Junction to Case Rth(j-c) 1. 92 °c/w
Thermal Resistance, Junction to Ambient Rth(j-a) 62.5 °c/w
Purposes (3.2mm from case for 10 seconds) TL 260 °c
-149-
.TOSHIBA SEMICONDUCTOR TIP125
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage VBR(CEO) IC=-30mA, IB=O -60 - - V
Collector Cut-off Current ICBO VCB=-60V, IE=O - - -200 /.fA
DC Current Gain hFE(1) VCE=-3V, IC=-O.SA 1000 - -
hFE(2) VCE=-3V, IC=-3A 1000 - -
Collector-Emitter VCE(sat) (1) IC =-3A, IB=-12rnA - - -2 V
Saturation Voltage
VCE(sat) (2) IC=-SA, IB=-20mA - - -4
IC=-3A
Turn-on Time ton - 1.5 - "s
Switching Time IBl=-IB2=-12rnA
Turn-off Time toff VBE(off)=SV - 8.5 - "s
RL=lon
TOSHIBA CORPORATION
-150-
SEMICONDUCTOR
TOSHIBA TIP125
TECHNICAL DATA
IC - VCE IC - VCE
---{! -6
I I COMMON EMITTER COMMON EMITTER
----..... --
~
To = 25"C To=100"C
-::. -5
-3.0 -2.5
I
~
<: -5
-2.5
_I""""" -L5
V '-"" f-"'" 2.0 V r.- ~O
H " ~ I--'"' -1.5 S I'l I- ..... LO
z'"
-4,
V I--'"' I-"
" ..... I-- -1.0 .
z
-4
~V I--'"'
..... -a6 '-
~ 1,'" I- I ~p l- I-
..... .....
-3 -3
0.4.
p U6 f--"'
" ...... l- I-" "
..'"
0
"
-2 U4,
0.3
-
-
.."'"
0 -2 ..... f- I
0.2
'"
..:1
..:1
0
-1
IB 0.2mA '" ..:1
..:1
0
-1 :"--"""" IB=-o.lmA
" I 0 '" J ..1 OJ

-2 -4, -6 -8 -10 -12 -14 2 -4 ---{! 8 10 -12 -14.
IC - VCE
---{! 10000
COMMON EMITTER
~ COMMON
To=-55"C
5000 ~G
<: -6.0
~
-5 EMITTER
i-"" l.- I- -5.0 l- I- 4.0 I-- ,,()() -""
.."
H
IY "
I-""" _I- -3.0 ..... ...'"
"'
3000 ~~ I
~
I-'"" !""-..
~
VCE=-3V
I- .....
-4,
'""'1'1'
V I
~ ~ V V~ ~",,,, r-- l '
l.- I- I- ~
I--'"' 2.0 <:
::l
p
"
-3
l- I- I-- -1.4 ".z 1000
.."'"
0 -2 I-
""""
-1.0
I ::l'"
p
500
'"
..:1
..:1 -1
IB- 0.6mA
"
"A
300
V
./
0
" I I
o
o -2 -4 -10-6 -8
I I 0
-12 -14 100
,
COLLECTOR-EMITTER VOLTAGE -0.1 -0.3 -1 -3 -10
VCE (V)
VCE(sat) - IC
COMMON EMITTER VBE(sat) - IC
-10 IC/IB-250
COMMON EMITTER
Ic/ IB= 250
-5
-3
--~""
_ To=-55"C .",:::iii~
To =-55"(;
-1
25 1 25 P'
-0.5 1--100
-0.3
-0.1 -0.3 -3 -1
= 100
0.3 3 -10
-10
COLLECTOR CURRENT IC CA) COLLECTOR CURRENT IC CAl
TOBHIBA CORPORATION
- 151-
SEMICONDUCTOR
TOSHIBA TIP125
TECHNICAL DATA
VCE(sat) - Tc
-6 -10
COMMON EMITTER
z0
COMMON EMITTER
'< -5 VCE=-3V ...
H
-5
1/1 ~>
~
0 ... ~ -3
H
-4 1/, <>:
IB= -2OmA IC=~
I-- I--
... JI I
OJ
~
;0
-3
!iC
II
.CJ
.,j.?/1
'I>
IJ &1 ';;<II
...
...
.;o?
H
~
P:1 -l
-12
-2
F= =
-3
-1 F= F=
~ -2
...
0
0
"'j 1/ i§
"'O'l
-0.5
O'l I oc
-1 O'l<>:
"
" I I " ...
0
0
/ / I ""
00
0:>
-0.2
-80 -40 o 40 80 120 160 200
-0.4 -0.8 -1.2 -L6 -2.0 -2.4 - 2.8
CASE TEMPERATURE Tc ('"C)
'< IC - L (UNCLAMPED INDUCTIVE LOAD)

-20
~ -4.0 H
o VC C =- 20V
COMMON EMITTER RBB2=100Q
-10
!l -3.2
VCE=-3V
~
[j
Tc = 25'"C
-5 see Figure 2
~
D
o
... -2.4 IC 5A -3 ~ II
o"
:> -,.... ...i§ <9_./1<>
6'0",
II
~
3 r--;""
......&1 -1.6
--
!~ -0.8
1
-- o
o -1
o
-80 -40 o 40 80 120 ISO 3 10 30 100
CASE TEMPERATURE Tc ('"C) UNCLAMPED INDUCTIVE LOAD L (mH)
Pc - Tc Pc - Ta
70 3.5
Rth( j-c )$;L92"C/W ~ Rth( j-a) $;S2.5"C/W
60 ~;- 3.0
~~
50 g~ 2.5
fll
40 g~ 2.0
DH
Z ...
30 ~ ~ 1.5
I'
i
ZH
0",
"\ ~ 1.0 ......

1'\ ......
~I
10
1,\ 0.5
o ~ ......
o 20 40 60 80 100 120 140 160 ~ 20 40 60 80 ~ 120 ~ ~
CASE TEMPERATURE Tc CC) AMBIENT.(Free-Air) TEMPERATURE Ta ('"C)
TOSHIBA CORPORATION
-152-
SEMICONDUCTOR
TOSHIBA TIP125
TECHNICAL DATA
SAFE OPERATING AREA
3
o
=
-
-
H
CURVES MUST BE DERATED

IN TEMPERATURE.
-U!1L---~_~3~~~~_1~O~--L--GO~~~U_UlOOL---~
COLLECTOR-EMITTER VOLTAGE VCE (v)
IB
MONITOR
TUT VCE
r - - - - - - - - --, MONITOR
RBBl I I
-VIN O----J~----~-+-4'--~-( :
(PULSE) : co
I .-i
IL __________ J I II
.t
VCC=-30V
is supplied by genetator with the following characteristics:
tr. tf <15ns. tw=20Jts. Du ~ 1%
(B) -VIN. RBBl and RBB2 are varied to obtain desired base current levels.
IC =t~:;."') -20V
VCE
VOER(SUS)
TOBHIBA CDRPDRATIDN
-153 -
TOSHIBA TRANSISTOR
(DARLINGTON POWER)
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD ¢3.6±o.2
~
V~
FEATURES: ..x V ~'tI~ ~
:::II •
....'"
High Collector Power Dissipation : PC=65W @Tc=25·C
'"
High DC Current Gain: hFE=lOOO(Min.)
Complementary to TIP12l
@VCE=-3V, IC=-3A
~L "':
H
:::II
0
L5MAX.
0.76
t'l
....
i
NAXIMUM RATINGS (Ta z 25·C)

1. BASE
CHARACTERISTIC SYMBOL RATING UNIT a COLLECTOR (HEAT SINK)
3. EM.I"r'l'ER
JEDEC TO 220AB
Collector-Emitter Voltage VCEO 80 V EIAJ SC-4,6
Emitter-Base Voltage VEBO -5 V TOSHIBA 2-10A1A
A
Weight : 1. 9g
I Pulse ICp -8
Continuous Base Current IB -0.1 A EQUIVALENT CIRCUIT
2
W r- _______ r~~L~CTOR
Dissipation
I Tc=25·C 65
i ~~l
Unclamped Inductive Load BASE
Energy ES/B 50 mJ
Junction Temperature Tj 150 ·C I 0:: 5k{J. 0::120.0.
IL _________ ±___ I
JI
EMITTER
TL 260
TOSHIBA CORPORATION
-154-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=ZsOC)

Collector-Emitter
Breakdown Voltage VBR(CEO) IC=-30rnA, IB-O -80 - - V
Collector Cut-off Current ICBO VCB=-80V, IE=O - - -ZOO p.A

Emi tter Cut-off Current lEBO VEB=-sV, IC=O - - -Z rnA
DC Current Gain hFE(1) VCE=-3V, IC=-O.sA 1000 - -

hFE(Z) VCE=-3V, IC=-3A 1000 - -
Base-Emitter Voltage VBE VCE=-3V, IC=-3A - - -Z.s V
Collector-Emitter VCE(sat) (1) IC=-3A, IB=-lZrnA - - -Z V
Saturation Voltage
VCE(sat)(Z) IC=-sA, IB=-ZOmA - - -4
IC=-3A
Turn-on Time ton
IB1=-IBZ=-lZrnA
- 1.5 - p.s
Switching Time
Turn-off Time toff' VBE(off)=sV
RL=lon
- 8.5 - p.s
TOSHIBA CORPORATION
-155-
SEMICONDUCTOR
TOSHIBA TIP126
TECHNICAL DATA
Ie - VeE Ie - VeE
-6 -6
COllllON EI4ITTER I I COMMON EMITTER
'<
~
-5
-3.0 -2.5
..... ..- f-
To=25'C
-- -2.0 I
'< -5
-2.5
......: ~ ~2.0 I--

I Tc =100'C
-- r- L5
-
0 , / [;..- 0
H
I.t I--'" I- ~ I--
H
-L5 J..-'" I-
~ 1.0
JV ,..I-
-
-4
t:
-4
-LO ... ~ 'f" I-
I/.'f" " -0.6 ~
~ JV-
Sl~ I-- I I' I-- r--
v ..
-
-3 -3
.~
'"
0
...[!l -2
I-
-0.6
-(14
I-
0
[!l
... -2 "
~,.. ~
-0.4
,
-0.3 I' 0.2
~
0
I-
0
-1
IB -0.2mA ~
0
-1
J..-::t'"" IB= -Q.lmA
0 0
o I a o J I 10J
0-24-68101214 o 2 -4 -6 8 10 -12 -14
Ie - VeE hFE - Ie
-6 10000
COIIMON EMI.TTER
-
COIIMON
'< -5
-60 To =-55'C
500 O~()o(, EMITTER
J...- f-"" ~ 1'"""'1i:0 I- -4.0
0
~ r--?"~
H
... -4 ~ f-"" L,...- l-

I~ l- f-
I- ~ -3.0
I
3000
9
I
'l>}r " rI\ VCE=-3V
~
III -3
J..-'" l - I-- r- -2.0 "~ V ~v :~~ ~
I"-
'"
0 l - i- ...... j..- -1.4 ... 1000
l - I--
~o
~ -1.0
-2
...
0
0
I 500
~ -1
I B --0.6mA
30o /
H
0
0 I V
0
o I
o -2 8 4 10 12-6 14 10 0
COLLECTOR-EMITTER VOLTAGE VCE (V) -0.1 -0.3 -1 -3 10
VeE(sat) - Ie
0
COllllON EMITTER VBE(sat) - Ie
-lID
0 IC/IB 250 COIIMON EMITTER
IC/IB-250
5
1
Tc=-55"(; ~~ To--55"(;
r- 25 25 ~
5F= 100 ~ 100
3 5
-0.3 1 3 10 -0.3 -1 3 -10
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT Ic (A)
TOBHIBA CORPORATION
-156-
TOSHIBA
TECHNICAL DATA
VCE(sat) - Tc
6 0
5 VCE=-3V
o Ifl
H
... -4
v. 3
IB=-20mA
Ic = -5A
.....-r-
- f--
II I
"
~ 12 -3
N
-3
o lQ/~/~ 2 = ;::::: -1
==
[!j
... 2
...~/ '/ 5
~
j -1 J II
o
o 1/ I
o / / I 40 o 40 80 120 160 200
o 0.4 -0.8 1.2 L6 2.0 2.4 2.8
CASE TEMPERATURE Tc ("C)
IC - L (UNCLAMPED INDUCTIVE LOAD)

j
e -4.0
COMMON EMITTER H
o
-20
-10
VCC= -20V
RBB=100Q.
>
I"!
III VCE=-3V ... Tc = 25't
~
-3.2
see Figure 2
I"!
-5
gj ~
Q -2.4 IC 5A o
-3 0>-8 I 1
~
o
-- ...'oo"
-.....;;;"'05O"'j I
>
~ -1.6
......
i -0.8
I'--.
- "'-
-3
1 r-r-
r-r-
~
'oo" -1
r-...
I
I"!
~ 0
III 80 40 o 40 80 120 160 3 10 30 100
CASE TEMPERATURE Tc ("C) UNCLAI4PED INDUCTIVE LOAD L (mH)
Pc - Tc Pc - Ta
70 3.5
...'"
0
o~ 60
Rth (j -c);:';; 1.9 2"C/W Rth(j-a) ~62.5·C/W
~~
'"
00
oP<
50
00
::>"
00
::>H
40 '"::>"
00
::>H
2.0
r-...
"'"
H< 30 "~ ~... 1.5
"'P<
"H
000 "H
000
r-...
000
::Ii'"
iil",
H 20
"' " o
::Ii'"
$IHill
e3 1.0 r-...
I'
......
HI"! 10 ."\ 0.5
1,\
~H~
::liP<.
o I"-,
"'~
;l~
o
" ......
o 20 40 60 80 100 120 140 160 o 20 40 60 80 100 120 140 160
CASE TEMPERATURE Tc ee) AMBIENT(Free-Air) TEMPERATURE Ta Cc)
TOSHIBA CORPORATION
-157-
SEMICONDUCTOR
TOSHIBA TIP126
TECHNICAL DATA
SAFE OPERATING AREA
• SINGLE NONREPETITIVE
PULSE Tc=25"C
CURVES MUST BE DERATED
LINEARLY WI'fH INCREASE
IN TEMPERATURE
-Ul~ __~~~~~u-__~~~~uu~__~
-1 -3 -10 -3) -100
IB MONITOR
TUT VCE
r---------~ MONITOR
I I
I I
-VINo---~~--~~~~I~__{ :
(PULSE) I co
rl
'" I
: ______ J II
VBB "'
~
VCC=-30V
tr, tf <15ns, tw=20ps, Du ~ 1%
(B) -VIN, RBBl and RBB2 are varied to obtain desired base current levels.
TUT
IC=t:1A
vCE(sat)
L=100mH VCE -20V
- - VCER(SUS)
VCC=-20V
Input pulse width is increased until ICp=-lA.
TOSHIBA CORPORATION
-158-
TOSHIBA TRANSISTOR
(DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS

Unit in mm
HAMMER DRIVE, PULSE MOTOR DRIVE 913.6 ±U2
~
AND INDUCTIVE LOAD DRIVE APPLICATIONS.
FEATURES: ~ ~l 12lt ~I~ ><
~
High Collector Power Dissipation : PC=65W
High Co.1lector Current
High DC Current Gain : hFE=lOOO(Min.)
@Tc=25°C
: IC(DC)=-5A(Max.)
@VCE=-3V, IC=-3A
~L'
'"....
<d
.;
H
::s
rr
Complementary to TIP122 0
l.5MAX. <1
....
U? 6 I
><
2.54 2.54 :l
111ft 1 I
;j d
t-~
..... 1
...
":

~1
L BASE
3. EMITTER
Collector-Base Voltage VCBO -100 V JEDEC TO 220AB
Collector Emitter Voltage VCEO 100 V EIAJ SC-46
Emitter-Base Voltage VEBO -5 V TOSHIBA 2-10A1A
A
Weight : 1. 9g
I Pulse ICp -8
Continuous Base Current IB -0.1 A EQUIVALENT CIRCUIT
2
W r- _____ C~~LrT::,
Dissipation
I Tc=25°C 65
Energy ES/B 50 mJ
BASE
'~'
I
I
I
I
,~ I
I ::::5kO 1200 :
Storage Temperature Range Tstg -65 -150 °c :- - - - -.- ---L--- J
EMITTER
CHARACTER1STIC SYMBOL MAX. UNIT
Thermal Resistance, Junct·ion to Case Rth (i-c) 1.92 °C/W
Purposes (3.2mm from case for 10 seconds) TL 260 °c
-159-
TECHNICAL DATA

Collector-Emitter
Breakdown Voltage VBR(CEO) IC=-30mA, IB=O -100 - - V
Collector Cut-off Current I CBO VCB=-lOOV, IE=O - - -200 /.IA
Collector Cut-off Current ICEO VCE=-SOV, IB=O - - -0.5 rnA
DC Current Gain hFE(l) VCE=-3V, IC=-O.SA 1000 - -

hFE(2) VCE=-3V, IC=-3A 1000 - -
Collector-Emitter VCE(sat) (1) IC=-3A, IB=-12rnA - - -2 V
Saturation Voltage
VCE(sat) (2) IC=-SA, IB=-20mA - - -4
IC=-3A
Turn-on Time ton IBl=-IB2=-12rnA
- 1.5 - /.IS
Switching Time
VBE(off)=SV
Turn-off Time toff RL=lOO
- 8.5 - /.IS
TOBHIBA CORPORATION
-160-
TECHNICAL DATA
IC - VCE IC - VCE
-6 -6
-
I COMMON EMITTER I I
-
COMMON EMITTER
:;;
H
0
-5
-4 ~ ~ I--""
/
-3.0
....
-2.5 Tc = 25"C
l - I-'"
l- I-- I-
-
-2.0_L
L5
:;;
H
0
-5
~ --
- -
-2.5
~ ....... ~O
-
Tc= 100"C
-1.5
-1.0
" --
-4
... ~V l.;- I--"" ... ~V _I"""
.... --
-1.0
-U6 -
'" '"
i
0
~
...
-3
-2
'Y' I-
......
l- I-- I-'"
_-U6
I
U4 -
iii'"
p
0
[§
-3
-2
~
IV. 10'
fJ ~
I--""
- -U4
I
a
U3 -
...f;3 U2
~
H
-1 H -1 ~ I-'" I B - -UlmA
H IB U2mA H
a
0
0
0
I I
o I 0
o J I I 10
o -2 -4 -6 -8 -10 -12 -14 o -2 -4 -6 -8 -10 -12 -14
IC - VCE
-6 10000
----- -
COMMON EMITTER
..
~
-5
l.;- I-"'"
-6,0 Tc = -55"C
-~ I-- . -4.0
5000 ~()o(,...r
COMMON
EMITTER
0
~ f-"" ',.." 9'";L I i"'" ...... VCE=-3V
H
... -4 .... -I- .-3.0 ..; 3000

:/ 'P~ r\
'"1<1
~
-3
~
I--""
-- I-
I
2.0
..
'"
H
c
/ VV I,,,,"'~ ......
~
- ... 1000
0 I-- I-- I-'" 10- -1.4
I'""" 1.0 '"
~
~
-2
...a I p
500
~ IB--U6mA 0
300 /
~ -1 0
/
a I I
0
o
0 "'
o 2 4 -6 -8 10 -12 - 14 100
-U3 -3
\
COLLECTOR-EMITTER VOLTAGE VCE (V) -Ul 10
VCE(sat) - IC
0
COMMON EMITTER
Ic/IB=250 -20
COMMON EMITTER
Ic/ I B-250
gj -;; -3
... m
... "
~fff ~~ r-- ....,::::;
~>
oc'"
...
-1
Tc = -55"C
25
-" Tc=-55"C
25 ~
~;: -U5 ' - - 100
HH
00
0> -U3
Ul U3 -1 -3 10
-U 5
-Ul
== 100
-U3 -1 -3 -10
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
TOSHIBA CORPORATION
- 161-
TECHNICAL DATA
VCE(sat) - To
6
'" -10
o
5
C0Ml40N EMITTER
VCE=-3V
...~
H
-5
COMIKlN EMITTER
'(1'1 o~
H " /. ~e -3 IC=-5A t- r---
4. 00 IB= -20mA
j / I ....-r-
I ...l§
:3
Ii
","
'f
N
:;/~f:)I I
-12
-2
-3
-1
==
t:::
~
H 1 Ii 'I
o
o
I I
0 ./ .J 1/ -4.0 o 4.0 80 1a:J 160 200
o -0.4. -0.8 -L2 -L6 -2.0 -2.4. -2.8
CASE TEMPERATURE Tc (t)
IC - L (UNCLAMPED INDUCTIVE LOAD)

3 -2)
t -4..0
C 0Ml40N EMITTER H
o VCC=-20V
-10 RBB= 1000
lil
I
VCE=-3V Tc = 25"C
> -3- 2
-5 see Figure 2
~
~ 4'&~ II
~ -2.4. IC 5A "l§ -3
...........;,"'SOllJ) I
o
> t- :3
...
~ -L 6 '- 1"-1- ~H 1"1"
...... -1 1-1"-
1-1"-
o -1
1i -0. 8 "
~
I ~ -0.5
H
'"'"«:
~
0 -0.3
-80 -4.0 0 4.0 80 120 160 1 :3 10 30 100
CASE TEMPERATURE Tc (t) UNCLAMPED INDUCTIVE LOAD L (mH)
Pc - Tc Pc - Ta
70 5
...'"
0
,,~
60
Rth(j-C);;;; 1.92t/W
0
Rth(j-a) S62.5"C/W
~~
H~
H
DO 50
011<
'"
P'" 40 ,.....
00
PH
"'"'11<...
H«:
30
, 5 I'
"'H
om I"-
om
::0;1'>
H 20
" 0
!......
alii 10 "- 5 ~
......
~~ "-
::0;11<
o 1"-
o a:J 40 60 80 100 la:J 14.0 160 20 4.0 60 80 100 120 14.0 160
CASE TEMPERATURE Tc (t) AMBIENT(Free-Air) TEMPERATURE Ta ("C)
TOSHIBA CORPORATION
-162-
TOSHIBA SEMICONDUCTOR TIPl27
TeCHNICAL DATA
SAFE OPERATING AREA
L~~o~1
-20
..:
-10 IC LLWl'J11) * II l
Ie MAX. (CONTINUOUS)
-5 ~.. I---
0
H ..;-
1,"'1
... -3
.. 0..0\
'"~
::>
0 -1
'\.\
'fy.~
\
~
C>'?i.
...
0
0 -0.5 * SINGLE NONREPETITIVE
~ PULSE Tc= 25'(;
H -(13
0
I N TEMPERATURE
-(11
-1 -3 -10· -30 -100
IB MONITOR
TUT VCE
r----------,
-V IN
(PULSE)
o---'W\r--~---<I-:---.,....-I.
I
co
rl
MONITOR
IBn ?
t: OO.:....::4--_ _---L
II 10%
H
Ix:
Vce=-30V VCE
tr,tf<lSns, tw=20ps, Du:O;l%
(B) -VIN, RBBI and RBB2 are varied to obtain desired base current levels.
TUT
IC=t~lA
r - - - - - - - --,
R I , IC_ VCE
-VIN O-_-JwB~B_l_~_,I~~ MONITOR
(PULSE) gC ~---~
rl
II VCE VeE(aat)
L= 100mH -20V
'"
Jl
V CC=-20V VCER(SUS)
Input pulse width is increased until ICp--lA.

TOSHIBA CORPORATION
-J63 -
TOSHIBA FIELD EFFECT TRANSISTOR
TOSHIBA SEMICONDUCTOR YTFl50
TECHNICAL DATA SILICON N CHANNEL HOS TYPE
(1Z' -HOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS

CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in mm
DRIVE APPLICATIONS.
FEATURES:
.Low Drain-Source ON Resistance: RDS(ON)=0.045n(Typ.)
High Forward Transfer Admittance : IYfsl= lIS (Typ.)
,=Fl
•
.,
~25.0l.!AJ(
¢1.5 Il
. II ~ ~
I~
•
><
Low Leakage Current : IGSS=±10OnA(Max.) @VGS=±20V .,,,

IDSS= 25~A(Max.) @VDS=100V dd
+1
30.2±0.2 :0
..;
• Enhancement-Mode : Vth=2.~.OV @ VOS=VGS,IO=250UA ....
l~
~5
+0.08 ~JJ ""'-... "co ...
r...
2
MAXIMUM RATINGS (Ta=25°C) ~~. ¥ .~ dd
co
+1 ~
~i,.lL
0
OJ
CHARACTERISTIC SYMBOL RATING UNIT d .,.'"
Drain-Source Voltage VOSX 100 V 40.011AX
Drain-Gate VoltAge (RGS=IMn) VOGR 100 V
1. GATlS
Gate-Source .Voltage VGSS ±20 V 2. SOURCE
DRAIli (CASE)
DC(Tc=25°C) 10 40
JEDEC TO-204AE/TO-3
Orain Current DC(Tc=lOO°C) 10 25 A EIAJ
Pulse lOp 160 TOSHIBA
Inductive Current (Clamped) ILP 160 A Weight : l5.8g
Drain Power Oissipation 150
(Tc=25°C) Po W
Channel Temperature Tch 150 °C
Storage Temperature Range Tstg -55"'150 °C
Thermal Resistance, Junction to Case Rth(j-c) 0.83 °C!W
Thermal Resistance, Junction to Ambient Rth(j-a) 30 °C!W
Muximum Lead Temperature for Soldering
Purposes (1.6mm from case for 10 seconds) TL 300 °C
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHISA CORPORATION
-164-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25·C)

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. MAX. LINIT
Gate Leakage Current lGSS VGS=±20V, VOS=OV - - ±100 nA
Drain Cut-off Current
VOS=100V,VGS=OV,Tc=25·C - - 250 IJA
lDSS
VOS=80V ,VGS=OV,Tc=125·C - - 1000 IJA
Drain-Source Breakdown Voltage V(BR)OSS lD=250IJA, VGS=OV 100 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2501JA 2.0 - 4.0 V
Forward Transfer Admittance J¥isJ VDS=10V, ID=20A 9 11 - S
On-State Drain Current lD(ON) VDS=lOV, VGS=lOV 40 - - A
Drain-Source ON Resistance RDS(ON) ID=20A , VGS=10V - 0.045 0.055 n
Drain-Source ON Voltage VDS(ON) lD=40A , VGS=lOV - 2.0 V
Input Capacitance Ciss - 3000 pF
Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV, f=IMHz - 500 pF
Output Capacitance Coss - 1500 pF
Rise Time tr l D=20A - 100 ns
Switching Time
Turn-on Time
Fall Time
ton
tf
lO'Jl "111 rOUT
o .....
101Js,,/
g:
VIN:tr,tf<5ns
.
.-<
VD =24V
-
-
135
100
ns
ns
Turn-off Time toff D.U:>I% (Zout=4.7n) - 225 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg VGS=10V, ID=SOA, - 63 120 nC
Gate Source Charge Q~s VDS=80V - 27 - nC
Gate-Drain ("Miller") Charge Qgd - 36 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25·C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. HAX. UNIT
Continuous Source Current IS - - - 40 A
Pulse Source Current lSp - - - 160 A
Diode Forward Voltage VSD IS=40A, VGS=OV, Tc=2S·C - - 2.5 V
Reverse Recovery Time tn' Tj=150·C, IF=40A, - 600 - ns
Reverse Recovered Gharge Qrr dlF/dt=lOOA/lJs - 3.3 - IJC
TOBHIBA CORPORATION
-165 -
TOSHIBA SEMICONDUCTOR YTFISI
TECHNICAL DATA SILICON N CHANNEL MOS TYPE
(1C-HOS)

CHOPPER REGULATOR. DC-DC CONVERTER AND K>TOR Unit in mm
DRIVE APPLICATIONS. • ~2a.OIlAX ~
FEATURES:
Low Drain-Source ON Resistance: RDS(ON)sO.04SQ(Typ.) ~~~l
., . II
~
~I-
. ~
High Forward Transfer Admittance : IYfsl= llS (Typ.) ~1.5 Jl
Low Leakage Current: IGss-±100nA(Hax.) @ VGS=±20V
IDSS= 2S0UA(Hax.) @ VDSs60V
"'.-
dd
+1
Enhancement-Mode : Vt h=2.0n4.0V @VDS=VGS,ID=2S0UA
30.2±0.2
'"
.;
l~
"'

+0.0 8
~5
-t- .-E~
~~.
2 ....
v;-jj ""'" .... dd
.
;j
+1 .,
0
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDSX
RATING
60
UNIT
V
X"'l/ 40.011AX
...'" '"
d
Drain-Gate Voltage (RGS=1Mn) VOGR 60 V

1. GATE
Gate-Source Voltage VGSS ±20 V 2- SOORCE
DRAIN (CASE)
DC(Tc=25·C) ID 40
H:DEC TO-204AE/TO-3
Drain Current DC(Tc=100·C) ID 25 A EIA.
Pulse IDP 160 TOSHIBA
Inductive Current (Clamped) ILP 160 A Weight : 15.8g

Drain Power Dissipation
(Tc=2S·C) PD ISO W
Channel ·Temperature Tch 150 ·C
Storage Temperature Range Tstg -SS"'150 ·C
~uximum Lead Temperature for Soldering ·C
-166-
TECHNICAL DATA

CHARACTERISTIC SY~IBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS=±20V, VOS=OV - - ±100 nA
VOS=60V ,VGS=OV,Tc=2SoC - - 2S0 uA
Orain Cut-off Current IDSS
VOS=48V ,VGS=OV,Tc=12SoC - - 1000 UA
Drain-Source Breakdown Voltage V(BR)OSS ID=2S0UA, VGS=OV 60 - - V
Gate Threshold Voltage Vth VOS=VGS, IO=2S0UA 2.0 - 4.0 V
Forward Transfer Admittance !Vfs! VOS=lOV, IO=20A 9 11 - S
On-State Drain Current IO(ON) VOS=lOV, VGS=IOV 40 - - A
Orain-Source ON Resistance RDS(ON) IO=20A , VGS=IOV - 0.04S O.OSS n
Orain-Source ON Voltage VDS(ON) ID=40A , VGS=IOV - 2.0 V
Reverse Transfer Capacitance Crss VOS=2SV, VGS=OV, f=1MHz - SOO pF
Output Capacitance Coss - 1S00 pF
Rise Time tr I D=20A - 100 ns
Turn-on Time ton lOVn VI~l
o .... c: ~fOVOUT
• - 13S ns
Switching Time
Fall Time tf 10us:;; ...... - 100 ns
VIN:tr,tf<Sns VDD=24V
Turn-off Time toff O.U:liI% (Zout=4.7n) - 22S ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg
VGS=lOV, ID=50A, - 63 120 nC
Gate Source Charge QgS VOS=48V - 27 - nC
SOURCE-ORAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S0C)

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. HAX. UNIT
Pulse Source Current ISp - - - 160 A
Oiode Forward Voltage VSD IS=40A , VGS=OV, Tc=2SoC - - 2.S V
Reverse Recovery Time trr Tj=lSO°C, IF=40A. - 600 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/us - 3.3 - J..!C
TOSHIBA CORPORATION
-167 -
TOSHIBA SEMICONDUCTOR YTF152
( 1l'-HOS)

CHOPPER REGULATOR , DC-DC CONVERTER AND MOTOR Unit in \DID
DRIVE APPLICATIONS. Q/2 !l.nV6V ~

~
i ;1 :II
~I~
FEATURES: 'Q/21.OMAX
Low Drain-Source ON Resistance: RDS(ON)=0.06n (Typ.)

..,.., I 11 ~
. ~igh Forward Transfer Admittance : IYfsl=l1S (Typ.)

f111.5 g
. Low Leakage Current : IGss=±IOOnA(Max.) @ VGS=±20V
"'dd..
IDSS= 250uA(Max.) @ VDS=100V +1
30.2±0.2 ....10
Enhancement-Mode : Vt h=2.0-4.0V @ VDS=VGS,ID=250UA ....
l~
1~5
+0.08 ~
2
.. '" ~.c
""'" ....
MAXIMUN RATINGS (Ta=25°C) ~~. -1'~9- dd
+1 0
CHARACTERISTIC SYMBOL RATING UNIT ~"'I /" d...'" ''""

Drain-Source Voltage VDSX 100 V 4,0.0 MAX
Drain-Gate Voltage (RGS=IMn) VDGR 100 V
1. GATE
Gate-Source Voltage VGSS ±20 V 2- SOURCE
DRAIII (CASE)
DC(Tc=25°C) ID 33
JEDEC TO-204AE/TO-3
Drain Current DC(Tc=IOO°C) ID 20 A EIAJ
Inductive Current (Clamped) hp 132 A Weight : 15.8g
Drain Power Dissipation 150 W
(Tc=25°C) PD
Storage Temperature Range Tstg -55"-150 °C
Thermal Resistance, Junction to Ambient Rth(j-a) 30 °C/W
Muximum Lead Temperature for Soldering 300 °C
-168 -
TECHNICAL DATA

Gate Leakage Current IGSS VGS=±20V, VDS=OV - - ±100 nA

VDS=100V,VGS=OV,Tc~25°C - - 250 lJA
IDSS
VDS= BOV ,VGS=OV, Tc-125°C - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS ID=250lJA, VGS=OV 100 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=25OlJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV, ID=20A 9 11 - S
On-State Drain Current ID(ON) VDS=lOV, VGS=lOV 33 - - A
Drain-Source ON Resistance RDS(ON) ID=20A , VGS=lOV - 0.06 O.OB n
Drain-Source ON Voltage VDS(ON) ID=33A , VGS=lOV - 2.2 V
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=lMHz - 500 pF
Output Capacitance
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
Coss
tr
ton
tf
toff
0..... Vly~
IOn
lOlJs,;
~
VIN:tr,tf<5ns
•
.....
r
I D=20A
OOl
VD =24V
D.U:;;l% (Zout~4.711;
-
-
-
-
-
1500 pF
100 ns
135 ns
100 ns
225 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Og VGS=lOV, ID=50A, - 63 120 nC
Gate Source Charge OgS VDS=BOV - 27 - nC
Gale-Drain ("Miller") Charge Ogd - 36 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta-25°C)

Diode Forward Voltage VSD IS=33A , VGS=OV, Tc=25°C - - 2.3 V
Reverse Recovery Time trr Tj=150°C, IF=40A, - 600 - ns
Reverse Recovered Charge Orr dIF/dt=100A/lJs - 3.3 - lJC
TOSHIBA CORPORATION
-169-
SEMICONDUCTOR YTF153
TOSHIBA TECHNICAL DATA SILICON M CHANNEL HOS TYPE
( 7Z'-HOS)

CHOPPER REGULATOR , DC-DC CONVERTER AND MOTOR Unit in mm
DRIVE APPLICATIONS.
• ~25.01lA1L ~
FEATURES:
Low Drain-Source ON Resistance : RDS(ON)=0.06n (Typ.)
!~ ..w~"II
t1 .
~
f~
~
. ~igh Forward Transfer Admittance : IYfsl=llS (Typ.)

¢l.fl g ;
Low Leakage Current : IGSS=±lOOnA(Max.) @ VGS=±20V
.,,..
IDSS= 25QuA(Max.) @ VOS=60V dd
+1
3Q.2±Q.2
Enhancement-Mode : Vth=2.~.OV @ VOS=VGS,IO=250~A '"
..;
rot
l~
¢4.o!~~g v;JJ """'" ,..w
><
MAXIMUM RATINGS (Ta=25°C) ~~. 1 .~~
wW
dd
+1 ~
~/
0
CHARACTERISTIC SYMBOL RATING UNIT '"
d
rot '"
W
Drain-Source Voltage VOSX 60 V 4.Q.OIlAX

Drain-Gate Voltage (RGS=lMn) V.DGR 60 V
1. GATE
Gate-Source Voltage VGSS ±20 V 2. SOURCE
DRAIN (CASE)
DC(Tc=25°C) 10 33
JEDEC TO-204AE/TO-3
Orain Current OC(Tc=lOO°C) ID 20 A EIAJ
Pulse lop 132 TOSHIBA

Drain Power DisSipation
(Tc=25°C) PD 150 W
Storage Temperature Range TstR -55'\.150 °C
Muximum Lead 'Temperature for Soldering 300 ·C
-; 170-
TECHNICAL DATA

Gate Leakage Current IGSS VGS=±20V, VDS=OV - - !100 nA
VDS=60V ,VGS=OV,Tc=2S·C - - 2S0 IJA
IDSS
VDS=4SV ,VGS=OV,Tc=12S·C - - 1000 IJA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0IJA, VGS=OV 60 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2S0IJA 2.0 - 4.0 V
Drain-Source ON Resistance RDS(ON) ID=20A, VGS=lOV - 0.06 O.OS rl
Drain-Source ON Voltage VDS(ON) ID= 33A , VGS=lOV - 2.2 V
Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV, f=lMHz - 500 pF
Turn-on Time ton lOVn VIy~ ~loVOUT - 135 ns
Switching Time 0..... g ,..;
Fall Time tf 10IJs .,; - 100 ns
Turn-off Time toff D.U::.1% (Zout=4.7rl) - 225 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg - 63 120 nC
VGS=lOV, ID=sOA,
Gate Source Charge Q2S VDS=4SV - 27 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S·C)

Diode Forward Voltage VSD IS=33A , VGS=OV, Tc=2s·C - - 2.3 V
Reverse Recovery Time trr Tj=lsO·C, IF=40A, - 600 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/lJs - 3.3 - IJC
TOSHISA CORPORATION
-171-
(7r-HOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

DRIVE APPLICATIONS.
FEATURES:
..
..,;i
¢25.0IlAX.
~21.01!AX ,I .
;i
~
:E
:;l
Lo. Drain-Source O~ Resistance : RDS(ON)=0.5n (Typ.)
'" II . II r'J-
High Fon,ard Transfer Admittance : IYfsl=2.5s (Typ.)
Low Leakage Current : IGss=±lOOnA(Max.) @ VGS=±20V + 009
,(211.0-004- 1
IDSS= 250~A(Max.) @ VDS=200V "'
....
dd
+1
. Enhancement-Node : Vt h=2.Q'\.4.0V @ VDS=VGS,ID=250~A 302±02
:s
rl
l~
MAXHlUN RATINGS (Ta=25°C)

I¢,.o:tg~g ~lL ~ "'<I ..
<
~~. ~: del ;II
'0- +1 0
CHARACTERISTIC SYNBOL RATING UNIT ~"'l/ '"d

rl 'co"
Drain-Source Voltage VDSX 200 V 4.00IlAX.
Drain-Gate Voltage (RGS=lMn) YDGR 200 V
1. GATE
DRAIN (CASE)
DC(Tc=25°C) ID 5
JEDEC TO-20UIA/TO-3
Drain Current DC(Tc=lOOOC) ID 3 A EIAJ TC-3,TB-3
Pulse IDP 20 TOSHIBA 2-21EIB
Drain Power Dissipation 40
(Tc=25°C) PD W
Storage Temperature Range TstR -55'V150 °C
Thermal Resistance, Junction to Ambient Rth(j-a) 30 °C/I'I
Muximum Lead Temperature for Soldering 300
Purposes (1.6mm from case for 10 seconds) TL °C
rights of ihe third parties which may result from its use. No license is granted by implication
-172-
TOSHIBA SEMICONDUCTOR Y T F 2 2 0
TECHNICAL DATA

CHARACTERISTIC SnmOL TEST CONDITION NlN. TYP. NAX. UNIT

VDS=200V, VGS=OV, Tc=25"C - - 2S0 IlA
IDSS
VDS=160V, VGS=O\', Tc=125"C - - 1000 IlA
Drain-Source Breakdown Voltage V(BR)DSS ID=2501lA, VGS=O\' 200 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2501lA 2.0 - 4.0 V
Forward Transfer Admittance /Yfs/ VDS=lOV, ID=2.SA 1.3 2.S - S
On-State Drain Current ID(ON) VDS=IOV, VGS=lOV 5 - - A
Drain-Source ON Resist~nce RDS(ON) ID=2.SA, VGS=IOV - O.S 0.8 II
Drain-Source ON Voltage VDS(ON) ID= SA , VGS=lOV - 2.7 V
Reverse Transfer Capacitance Crss VDS=2SV, VC;S=OV, f-lMHz - 80 pF
-
Vlif~~~\OOT
Rise Time tr 60 ns
Turn-on Time ton lOVJl
0 ..... g -<t
- 100 ns
Switching Time
Fall Time tf lOllS Lf'l
VIN: tr, tf<5ns VDD=lOOV
- 60 ns
Turn-off Time toff D. Usl% (Zout=SOIl) - 160 n!;
Total Gate Charge
VGS=lOV, ID=6A, - 11 IS nC
Gate Source Charge QgS VDS=160V - S - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S"C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. NAX. UNIT
Continuous Source Current IS - - - S A
Diode Forward Voltage VSD IS= SA , VGS=OV, Tc=~S·C - - 2.0 V
Reverse Recovery Time trr Tj=lS0·C, IF=SA, - 3S0 - ns
Reverse Recovered Charge Qrr dIF!dt=lOOA!lls - 2.3 - lJC
TOBHIBA CORPORATION
-173 -
TECHNICAL DATA SILICON N CHANNEL MOS-TYPE

(7C -MOS)

DRIVE APPLICATIONS.
FEATllRES:
.
:i.,
¢21iOIlAX •
kino I4AX 1 ..
;i
~
:0:
:;l
Low Drain-Source ON Resistance: RDS(ON)=O.sQ (Typ. ) II ~-
'" II
. High Forward Transfer Admittance : IYfsl=2.sS (Typ.)
.@"l.o!~g~
Low Leakage Current : IGSs=±100nA(Max.) @ VGS=±20V
IDSS= 2s0\.lA(Hax.) @ VOS=150V "'
dd
+1
.
SCl2±Cl2
• Enhancement-Node : Vth=2.~.OV @ VOS=VGS,10=2s0\.lA ~
....
l~
1.0' '.0-Cl15
+Cl08~
RATINGS (Ta=2s DC)
2
"- r-co .<
~
~~
MAXn1U~l dd
.~!>- +1 0
CHARACTElUSTIC SYNBOL RATING UNIT

/'" '"
d
.... '"
01
Drain-Source Voltage VDSX 150 V 'ClOMAX.

Orain-Gate Vo1tl'ige (RGS·INrt) VOGR 150 V
1. OATE
DRAIN (CASE)
DC(Tc=25°C) 10 5
JEDEC TO-20UIA/TO-3
Drain Current OC(Tc=IOO°C) ID 3 A
EIAJ TC-S,TB-S
Pulse IDP 20 TOSHIBA 2-211ilB
Inductive Current (Clamped) hp 20 A Weight: 15.8g
(Tc E 2s0C) PD W
Channel Temperature Tch 150 DC
Storage Tempera-ture Range Tsts?' -55"'150 DC
CHARACTERISTIC SnmOL MAX. UNIT
Thermal Resi sti1nce, Junction to Case Rth(j-c) 3.12 °C/I,
Therm[J] Resistance, Junction to Ambient Rth(j-a) 30 DeN
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA CORPORATIOI\!
-174-
TOSHIBA SEMICONDUCTOR YT F 2 2 1
TECHNICAL DATA

CHARACTERISTIC SnlBOL TEST CONDITI01\ NIN. TYP. ~IAX. UNIT
Gate Leakage Current IGSS VGS=±20V. 'iDS=or - - ±100 nA
Drajn Cut-off Current

VDS=150V.VGS=OV,Tc=25"C - - 250 ~A
IDSS
VDS=120V,VGS=OV,Tc=125"C - - 1000 ]JA
Drain-Source BreakdOl'"D Vol tage V(BR)DSS ID=250~A, vGS=or 150 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250~A 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=JOV, ID=2.5A 1.3 2.5 - S
Drain-Source ON Resist~nce RDS(ON) ID=2.5A, VGS=lOV - 0.5 0.8 rl
Drain-Source ON Voltage VDS(ON) ID= SA , VGS=lOV - 2.7 V
-
VIT~~rtOUT
Rise Time tr 60 ns
Turn-on Time ton 10')1
0.... g g - 100 ns
Switching Time
Fall Time tf lO~s
VIN:tr,tf<5ns VDD= 75V
- 60 ns
Turn-off Time toff D.U:>l% (Zout=50rl) - 160 ns
Total Gate Charge
VGS=lOV, ID= 6A, - 11 15 nC
Gate Source Charge QgS VDS=120V - 5 - nC
sounCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25"C)

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. NAX. UNIT
Diode Forward Voltage VSD IS=5A , VGS=OV, Tc=25"C - - 2.0 V
Reverse Recovery Time trr Tj=l50°C, IF=5A, - 350 - ns
Reverse Recovered Charge ' Qrr dIF!dt=100A!]Js - 2.3 - ]JC
TOSHISA CORPORATION
-175 -
TOSHIBA SEMICONDUCTOR Y T F2 2 2

(7l~HOS)

CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in DID!
DRIVE APPLICATIONS.
.<
9125.0 MAX. !Il
FEATURES: <
..,..,
:01 iRf2LOMAX ,I .<
~
:01
~
LOI' Drain-Source ON Resistance : RDS(ON)=o.an (Typ. ) II II "'-
01
High Forward Transfer Admittance : /Yfs/=2.5S (Typ.)
Low Leakage Current : IGSs=±lOOnA(Max.) @ VGS=±20V ¢LO!~g~
IDSS= 250~A(Max.) @ VDS=200V
., ...
dd
+1
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250~A 3a2±a2
:s...
l~
+a08 v-;1
IJ!I,&'0-a15 ............ .....
..... i'"
2
MAXIMUN RATINGS (Ta=25'C)
~~
dd
.~ +1 0
CHARACTERISTIC SYMBOL RATING UNIT d

/ '"
Drain-Source Voltage VDSX 200 V 4.aOMAX.
Drain-Gate Voltage (RGS=lMn) VnGR 200 V
L GATE
DRAIN (CASE)
DC(Tc=25°C) ID 4
JEDEC TO-204.IIA/TO-3
Drain Current DC(Tc=lOQ'C) ID 2.5 A
EIAJ TC-3,T8-3
Pulse IDP 16 TOSHIBA liI-21EIB
(Tc=25'C) PD 40 W
Channel Temperature Tch 150 'c
Storage Temperature Range Tstg -55'V150 'c
Thermal Resistance, Junction to Ambient Rth(j-a) 30 'C/\~

Purposes (1.6mm from case for 10 seconds) TL 'c
-176-
TECHNICAL DATA


VDS=200V,VGS=OV,Tc=25°C - - 250 \.IA
IDSS
VDS=160V,VGS=OV,Tc=125°C - - 1000 \.IA
Drain-Source Breakdown Voltage V(BR)DSS ID=250\.lA, VGS=OV 200 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250\.lA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV, ID=2.5A 1.3 2.5 - S
Drain-Source ON Resistance RDS(ON) ID=2.5A, VGS=lOV - 0.8 1.2 Q
Reverse Transfer Capacitance Crss VDS=2sV, VGS=OV, f=lMHz - 80 pF
Rise Time tr I D= 2.5A - 60 ns
Turn-on Time ton lOVJ1 VI~l ~! OVOUT - 100 ns
Switching Time 0..... g -4"
Fall Time tf 10\.ls If) - 60 ns
VIN:tr,tf<5ns VDD=lOOV
Turn-off Time toff D.U:>l% (Zout=sOQ) - 160 ns
Total Gate Charge
VGS=lOV, ID= 6A, - 11 15 nC
Gate Source Charge Qgs VDS=160V - 5 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)

CHARACTER I STI C SYMBOL TEST CONDITION NIN. TYP. NAX. UNIT
Diode Forward Voltage VSD IS= 4A , VCS=OV, Tc=~5°C - - 1.8 V
Reverse Recovery Time trr Tj=lsO°C, IF=sA, - 350 - ns
Reverse Recovered'Charge Qrr dIF/dt=lOOA/\.Is - 2.3 - \.Ie
TOSHIBA CORPORATION
-177-
TOSHIBA FIEL.D EFFECT TRANSISTOR
(1[-MOS)

DRIVE APPLICATIONS.
FEATURES:
..
iii
j1!25.0IolAX.
~1.OIlAX II ..
;i
!Ij
:II
~
t?
101,' Drain-Source ON Resistance : RDS(ON)=O.SQ (Typ. ) t1
II II :1'-
High Forward Transfer Admittance: IYfsl=2.SS (Typ.)
Il!1.O:!:gg:
10w Leakage Current : IGSS=±100nA(Max.) @ VGS=±20V
IDSS= 2~A(Max.) @ VDS=lS0V ""..
dd
+1
a0.2±0.2
• Enhancement-Mode : Vt h=2.0V4.0V @VDS=VGS,ID=2S0UA !l...
1~
+0.08 ~J.
¢.4,,0-0.15 2 ............ Nil ..
iii
~~
MAXIMUM RATINGS (Ta=2S0C) dd
'Eir +1 0
... '"
CI>
CHARACTERISTIC SYNBOL RATING UNIT d til
/'
Drain-Source Voltage VDSX 150 V ,000MAX.
Drain-Gate Voltage (RGS=lMn) VDGR 150 V
1. GATE
DRAIN (CASE)
DC(Tc=2S0C) ID 4
JEDEC TO-2 OUIA/T 0-3
Drain Current DC(Tc=lOO°C) ID 2.5 A EIAJ TC-3,TB-3
Pulse IDP 16 TOSHIBA 2-211UB
(Tc=2S0C) PD W
Channel Temperature Tch 150 ·C
Thermal Resistance, Junction to Case Rth{ j-c) 3.12 ·C/W
Thermal Resistance, Junction to Ambient RthCi-a) 30 °C/W
or otherwise- under any patent or patent rights of TOSHIBA or others_ TOSHIBA CORPORATION
-178-
TOSHIBA SEMICONDUCTOR YTF223.
TECHNICAL DATA

CHARACTERI STIC SYMBOL TEST CONDITION mN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS=±20V. VDS=OV - - ±100 nA

VDS=lSOV.VGS=OV.Tc=2SoC - - 2S0 \lA
IDSS
VDS=120V. VGS=OV,Tc=12SoC - - 1000 \lA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0\lA. VGS=OV ISO - - V
Gate Threshold Voltage Vth VDS=VGS. ID=2S0\lA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV. ID=2.SA 1.3 2.S - S
On-State Drain Current ID(ON) VDS=lOV. VGS=lOV 4 - - A
Drain-Source ON Resistsnce RDS(ON) ID=2.SA. VGS=lOV - O.S 1.2 Q
Drain-Source ON Voltage VDS(ON) ID= 4A , VGS=lOV - 3.S V

Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV. f=lMHz - SO pF
IOn VI\f~ltour
Rise Time tr - 60 ns
Turn-on Time ton 0..... § - 100 ns
Switching Time C"l
Fall Time tf lOlls lI"\ - 60 ns
VIN:tr.tf<Sns VD =75V
Turn-off Time toff D. U;l;l% (Zout= 50m - 160 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg VGS=IOV. ID= 6A. - 11 15 nC
Gate Source Charge Ql1.S VDS=120V - 5 - nC
Gate-Drain ("Miller") Charge Ql1.d - 6 - nC

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. HAX. UNIT
Diode Forward Voltage VSD IS= 4A , VGS=OV, Tc=2SoC - - 1.S V
Reverse Recovery Time trr Tj=150°C, IF=5A. - 3S0 - ns
Reverse Recovered Charge Qrr dIF/dt=100A!JJS - 2.3 - \lC
TOSHIBA CORPORATION
-179-
(7Z' -MOS)

CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in _
DRIVE APPLICATIONS.
FEATURES: a
~III!.OMAX
~2:LO"U J i .. :,:S
Low Drain-Source ON Resistance: RDS(ON)=0.25Q (Typ.) :i II JI :JI-
High Forward Transfer Admittance : IYfsl=4.8S (Typ.)
Low Leakage Current : IGSS=±100nA(Max.) @ VGS=±20V JJ!1.0:!:~8: I
....
dd
+1
a0.2±0.2
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250~A
...~
1r=
+0.08 ~
MAXIMUM RATINGS (Ta-25°C)
¢'&'0-0.111 2
2S~. T .
"--0-: NIl
dd i
+1 0
CHARACTERISTIC SYNBOL RATING UNIT ~. '"d... '"co
./
Drain-Source Voltage VDSX 200 V 40.0MAX.
Drain-Gate Voltage (RGS-IMQ) VDGR 200 V
1. GATE
Gate-Source Voltage VGSS ±20 V 2. SOUROE
DUIlI (OASE)
DC(Tc=25°C) ID 9
JEDEO TO-204MA/To-a
Drain Current DC(Tc=100°C) ID 6 A
EIAJ To-a,TB-a
Pulse IDP 36 TOSHIBA 2-21E1B
Inductive Current (Clamped) Itp 36 A Weight : 15.8g
Drain Power DiSSipation 75
(Tc-25°C) PD W
Thermal Resistance, Junction to Case Rth(j-c) 1.67 °CN
Thermal Resistance, Junction to Ambient Rth(j-a) 30 °CN
or otherwise under any patent or patent rights of TOSHIBA or others. TOBHI_ CORPORATION
-180-
TOSHIBA SEMICONDUCTOR YTF23-Q
TECHNICAL DATA

CHARACTERISTIC SY~!BOL TEST CONDITION mN. TYP. MAX. UNIT

VDS=200V,VGS=OV,Tc=2SoC - - 2S0 \.lA
IDSS
VDS=160V,VGS=OV,Tc=12SoC - - 1000 \.lA-
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0IJA, VGS=OV 200 - - \'
Gate Threshold Voltage Vth VDS=VGS, ID=2S0\.lA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=JOV, ID=SA 3.0 4.8 - S
Drain-Source ON Resistence RDS(ON) ID=SA , VGS=lOV - 0.2S 0.40 Q
Drain-Source ON Voltage VDS(ON) ID=9A , VGS=lOV - 2.S V

Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV, f=IMHz - ISO pF
Rise Time tr ID=SA - SO ns
Turn-on Time ton 10Vn
0...... VI~~
c: glOVOUT
_ - 80 ns
Switching Time
F<jll Time tf lO\.ls ~ - 40 ns
Turn-off Time toff D.U~l% (Zout=lSI1) - 90 ns
Total Gate Charge
VGS=IOV, ID=12A, - 19 30 nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S0C)

Diode Forward Voltage VSD IS=9A , VGS=OV, Tc=2SoC - - 2.0 V
Reverse Recovery Time trr Tj=IS0°C, IF= 9A, - 4S0 - ns
Reverse Recovered Charge Qrr dIF/dt=IOOA/\.ls - 3.0 - IIC
TOBHIBA CORPORATION
- 181-
(7l' -MOS)

DRIVE APPLICATIONS.
FEATURES:
..
<
.,
:01
j1J'25.0IolAX •
~LOIolAX II ..
~
j
:;l
Low Drain-Source ON Resistance: RDS(ON)=O.25n (Typ.) .., II II ~I-
. High Forward Transfer Admittance : !Yfs!=4.8S (Typ.)

Low Leakage Current : IGSs=±IOOnA(Max.) @ VGS=±20V fIl:LO:!:gg~
IDSS= 250~A(Max.) @ VDS=150V "'
...
dd
+1
30.2±0.2
• Enhancement-Mode : Vt h=2.0V4.0V @ VDS=VGS,ID=250~A
...~
l~
MAXIMUM RATINGS (Ta=25 DC)

~~0-0.15
+0.08 V-;1
2 ........... . '" ;!..
~-r ./''0-
dd
+1 0
CHARACTERISTIC SYMBOL RATING UNIT '".... ''""

d
Drain-Source Voltage VDSX 150 V 40.01olAX.

L GATE
Gate-Source Voltage VGSS ±20 V 2.SOURCE
DRAIN (CASE)
DC(Tc=25 DC) ID 9
JEDEC TO-204MA/TO-3
Drain Current DC(Tc=IOO°C) ID 6 A EIAJ TC-3,TB-3
Drain POI,er Dissipation
(Tc=25 DC) PD 75 W
Storage Temperature Range Tstg -55"'150 DC
Thermal Resistiince, Junction to Case Rth(j-c) 1.67 °C/I,
Thermal Resistance, Junction to Ambient Rth(j-a) 30 °C/lv
products: No responsibility is assumed by TOSHIBA for any infringements of patents or other
-182-
TECHNICAL DATA

CHARACTERISTlC SYMBOL TEST CONDlTlON NJt\. TYP. MAX. Ut\IT
Gate Leakage Current lGSS VGS=±20V. VDS=OV - - ±100 nA
VDS=IS0V. VGS=OV.Tc=2SoC - - 2S0 IlA
Drain Cut-off Current IDSS
VDS=120V • VGS=O\,. Tc=12SoC - - 1000 IlA
Drain-Source BreakdOlm Voltage V(BR)DSS ID=2S0IlA. VGS=OV ISO - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2S0IlA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV. ID=SA 3.0 4.8 - S
Drain-Source ON Resistance RDS(ON) ID= SA • VGS=lOV - 0.2S 0.40 rI
Drain-Source ON Voltage VDS(ON) ID= 9A • VGS=lOV - 2.S V
Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV. f=lMHz - ISO pF
Rise Time tr I D= SA - SO ns
Turn-on Time ton 10VJl Vl~~VOUT - 80 ns
Switching Time 0...... ~ ~
Fall Time tf lOlls .....
- 40 ns
Turn-off Time toff D.U:;l% (Zout=lS rI) - 90 ns
Total Gate Charge 19 30
(Gate-Source Plus Gate-Drain) Qg - nC
VGS=lOV. ID=12A ,
Gate Source Charge QI!.S VDS=120V - 10 - nC

CHARACTERISTIC SYMBOL TEST CONDITlON HIN. TYP. MAX. UNIT
Diode Forward Voltage VSD IS=9A , VGS=OV, Tc=~5°C - - 2.0 V
Reverse Recovery Time trr Tj=lSO°C. IF=9A, - 450 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/lls - 3.0 - IlC
TOSHISA CORPORATION
-183 -
(7C-MOS)

DRIVE APPLICATIONS.
FEATURES:
.<
;i
¢,2MMAX •
~21.0MAX.1 .< S
::l
..,
,., ;i
",1-
Low Drain-Source ON Resistance : RDS(ON)=0.40 (Typ.) II II 01
Low Leakage Current : IGss=±lOOnA(Max.) @ VGS=±20V
+ 1109
.@:l.0-1104. 1
11)"
IDSS= 250UA(Max.) @ VDS=200V dd
+1
3112±112
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250UA
...~
1~
:¢j~0-1115
+a08 V--;1 ...........
2 Ml
S
rzJ
dd
'0- +1 0
CHARACTERISTIC SYrIBOL RATING UNIT 1 ....
/' '"d.... '"
co
Drain-Source Voltage VDSX 200 V 4.110MAX.

Drain-Gate Voltage (RGS=H!O) VDGR 200 V
l. GATE
DRAIN (CASE)
DC(Tc=2S·C) ID 8
JEDEC TO-204llIA/TO-3
Drain Current DC(Tc=100·C) ID 5 A
EIAJ TC-3,TB-3
Pulse IDP 32 TOSHIBA 2-21E1B
Inductive Current (Clamped) Itp 32 A Weight : IS.8g
(Tc=2S0C) PD 75 W
Storage Temperature Range Tstg -S5'VlSO ·C
Thermal Resist<1nce, Junction to Case Rth(j-c) 1.67 °C/W
Thermal Resistance, Junction to Ambient RthCi-a) 30 °C/l~
Muximum Lead Temperature for Soldering 300 ·C

-184-
TECHNICAL DATA

CHARACTERISTIC SnlBOL TEST CONDITION NIN. TYP. MAX. liN IT
Gate Leakage Current IGSS VGS=±20V, VDS=OV - - ±100 nft.
VDS=200V,VGS=OV,Tc=2SoC - - 250 \.JA
IDSS
VOS=160V,VGS=OV,Tc=12soC - - 1000 \.JA
Drain-Source Breakdm,on Voltage V(BR)OSS ID=2s0\.JA, VGS=OV 200 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2s0\.JA 2.0 - 4.0 V
Forward Transfer Admittance IYfsi VOS=lOV, ID=sA 3.0 4.B - S
On-State Drain Current ID(ON) VDS=lOV, VGS=lOV B - - A
Drain-Source ON Resistznce RDS(ON) 10= SA , VGS=IOV - 0.4 0.6 rI
Drain-Source ON Voltage VDS(ON) 10= BA , VGS=IOV - 3.5 V
Rise Time tr ID=sA - 50 ns
Turn-on Time ton 10Vn VI~~ gIoVOUT - 80 ns
Switching Time 0...... ~ .....
Fall Time tf lO\.Js ..... - 40 ns
VIN:tr,tf<5ns VDD=90V
Turn-off Time toff D.US1% (Zout=15r1j - 90 nE;
Total Gate Charge
VGS=lOV, ID=12A,

Diode Forward Voltage VSD IS=BA , VGS=OV, Tc=2soC - - 1.8 V
Reverse Recovery Time trr Tj=ls0°C, IF=9A, - 450 - ns
Reverse Recovered Charge Qrr dIF/dt=IOOA/\ls - 3.0 - \.JC
TOSHIBA CORPORATION
-185 -
TOSHIBA SEMICONDUCTOR Y T F-2 3 3
TECHNICAL DATA SILICON N CHANNEL_MOS TYPE

(7C-MOS)

DRIVE APPLICATIONS.
FEATURES:
.<
1!f25.0MAX •
,1 .< i~
..,i1 1II2LOMAX ;i
~I-
Low Drain-Source ON Resistance : RDS(ON)=0.40 (Typ.) t1 I II
Low Leakage Current : IGSs=±lOOnA(Max.) @VGS=±20V
+0. 09
,tLO-o.04. 1
IDSS= 2S0~A(Max.) @ VDS:l SOV "' ...
dd
+1
30.2±0.2
• Enhancement-Mode : Vt h=2.0-4.0V @ VDS=VGS,ID=2S0~A ~
....
l~
IIII,"o:!:g~~ ""-;11 ~ .....
MAXIMUl'I RATINGS (Ta=2S0C)
K.
~ TI
-~r: +1'"
i.1
dd i
0
CHARACTERISTIC SYl-IBOL RATING UNIT ]/

d
.... '"
co
Drain-Source Voltage VDSX 150 V 4. 0.0 IoIAX.

Drain-Gate Voltage (RGS=lMQ) VDGR 150 V
L GATE
DRAIN (CASE)
DC(Tc=25°C) ID 8
JEDEC TO-204.lo1A/TO-3
Drain Current DC(Tc=lOO°C) ID 5 A
EIAJ TC-3,TB-3
Inductive Current (Clamped) hp 32 A Weight : l5.8g
(Tc=25°C) PD W
CHARACTERISTIC SYMBOL MU. UNIT
Thermal Resist"mce, Junction to Case Rth(j-c) 1.67 °C/I~
Thermal Resistance, Junction to Ambient Rth(j-a) 30 °C/I;

-186-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION Nlli. TYP. MAX. UNIT
VDS=150V,VGS=OV,Tc=25°C - - 250 IJA
Drain-Source Breakdown Voltage V(BR)DSS ID=250IJA, VGS=OV 150 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=25OIJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV, ID=5A 3.0 4.B - S
On-State Drain Current ID(ON) VDS=lOV, VGS=lOV B - - A
Drain-Source ON Resistance RDS(ON) ID= SA , VGS=lOV - 0.4 0.6 fl
Drain-Source ON Voltage VDS(ON) ID= BA , VGS=lOV - 3.5 V
Input Capacitance Ciss - BOO pF
T1
10Vn VI gloVOUT
Turn-on Time ton o ...... c: ..... - BO ns
Switching Time
Fall Time tf 10IJs If)
- 40 ns
Turn-off Time toff D. U:ol% (Zout= 15fl) - 90 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg VGS=lOV, ID=12A. - 19 30 nC
SOU~CE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)

CHARACTER I STIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Source Current IS - - - B A
Diode Forward Voltage VSD IS=BA , VGS=OV, Tc=25°C - - 1.B V
Reverse Recovered Charge Qrr dIF/dt=lOOA/lJs - 3.0 - IJC
TOSHIBA CORPORATION
-187 -
TOSHIBA SEMICONDUCTOR YTF24-0
( 1C-HOS)

CHOPPER REGULATOR , DC-DC CONVERTER AND MOTOR Unit in IDID
DRIVE APPLICATIONS.
~ ~
Qf"!l.OVAY
~
FEATURES: ;;j ~2LOMAX.1
Low Drain-Source ON Resistance: RDS(ON)=0.140 (Typ.)
..,.., II II i'l
I~

¢J.tl g J,
Low Leakage Current : IGSs=±100nA(Max.) @ VGS=±20V
IDSS= 250UA(Max.) @ VDS=200V
"'dd...
+1
3!l2±!l2 '"
• Enhancement-Hode : Vt h=2.0-4.0V @ VDS=VGS.ID=250~A ...l
....
l~
I~g~" ... '"

HAXIHUH RATINGS (Ta=:25°C) ~t·~·~~ "''''
dd
+1
... ~
I' 1 A.i 0
III
CHARACTERISTIC SYl-IBOL RATING UNIT 1/
d
.... '"
Drain-Source Voltage VDSi< 200 V '!lOMAX
Drain-Gate Voltage (RGS=IHO) VDGR 200 V
1. GATB
DRAIII (CASE)
DC(Tc=25°C) ID 18
JEDEC TO-204AE/TO-3
Drain Current DC(Tc=100°C) ID 11 A EIAJ
(Tc=25°C) PD 125 W
CHARACTERISTIC SnlBOL MAX. UNIT
Thermal ResisL1DCe, Junction to Case Rth(j-c) 1.0 °CN
Thermal ReSistance, Junction to Ambient Rth(j-a) 30 °C/I.,
rights of the third parties wh.ich may result from its use. No license is granted by implication
-188-
TECHNICAL DATA

CHARACTERISTIC SnlBOL TEST CONDITION HIN. TYP. MAX. UNIT
Gate Leakage Current ICSS VCS=t20V. VDS=OV - - tl00 nA
VDS=200V. VCS=OV.Tc=25°C - - 250 ~A
IDSS
VDS=160V. VCS=OV,Tc=125°C - - 1000 ~A
Drain-Source Breakdown Voltage V(BR)DSS ID=25011A, VCS=OV 200 - - V

Cate Threshold Voltage Vth VDS=VCS. ID=25011A 2.0 - 4.0 V
Forward Transfer Admittance Yfs VDS=lOV. ID=lOA 6 9 - S
On-State Drain Current ID(ON) VDS=lOV. VCS=lOV IS - - A
Drain-Source ON Resistsnce RDS(ON) ID=lOA , VCS=lOV - 0.14 O.lS rI
Drain-Source ON Voltage VDS(ON) ID=lSA • VCS=lO\' - 2.8 V
Reverse Transfer Capacitance Crss VDS=25V. VCS=OV, f=lMHz - 300 pF
Y1
Turn-on Time ton
lOVJl VI ~rVOUT - 90 ns
Switching Time 01H! g .
Fall Time tf lOllS -i ..... - 60 ns
VIN:tr. t f<5ns VDD=75V
Turn-off Time toff D.U:ril% (Zout=4.7r1) - 140 ns
Total Cate Charge 43 60
(Cate-Source Plus Cate-Drain) Qg
VCS=lOV, ID= 22A,
- nC
Cate Source Charge Qj!.s VDS=J60V - 16 - nC
Cate-Drain ("Miller") Charge Qgd - 27 - nC
SOURCE-DRAIN DIODE RATINCS AND CHARACTERISTICS (Ta=25°C)

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. MAX. UNIT
Diode Forward Voltage VSD IS=lSA , VCS=OV, Tc=:!5°C - - 2.0 V
Reverse Recovery Time trr Tj=150°C, IF=lSA, - 650 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/\Js - 4.1 - llC
TOBHIBA CORPORATION
-189-
(7C -MOS)

CHOPPER REGULATOR, DC-DC CONVERTER AND HOTOR Unit in mm
DRIVE APPLICATIONS. .....r
i ~~
~2I!.o
FEATURES: .,..,i IIt2LOIlAXJ

. Low Drain-Source ON Resistance: ROS(ON)=0.14Q (Typ.) I II Oll-

Low Leakage Current : IGSS=±lOOnA(Max.) @ VGsz±20V
jdLII Ij
.. t-
IOSS= 25QvA(Max.) @ VOs s 150V dd
+1
• Enhancement-Mode : Vt h=2.0U4.0V @ VOS=VGS,IO=250uA
30.2±0.2
~
...
1r.=
+o.08~)J
1114.0-0.15 2 " t-O<
~
MAXIMUM RATINGS (Ta=25°C) ~~. 1/ .~~ dd
0<
... .,
+1 ~
0
CHARACTERISTIC SYNBOL RATING UNIT 1
1 .... ...d 0<
Drain-Source Voltage VOSx 150 V 4.0.01lAX.

Drain-Gate Voltage (RGS=lMQ) VOGR 150 V
L GAT.
Gate-Source Voltage VGSS ±20 V 2. SOUIIC.
DIlAIII (CASZ)
DC(Tc=25°C) 10 18
JEDEC TO-204AE/TO-3 I
Drain Current DC (Tc=lOO°C) 10 11 A EIA.J
Pulse lOp 72 TOSHIBA
Inductive Current (Clamped) hp 72 A Weight : 15.88
Drain Power DiSSipation
(Tc=25°C) Po 125 W
Storage Temperature Range Tstl! -55"'150 °C
Thermal Resistance, Junction to Case Rth( j-c) 1.0 °C/\1
Thermal Resistance, Junction to Ambient Rth(;-a) 30 °C!\1
The infonnation contained herein is presented only as a guide for the applications of our
rights' of the third parties which may result from its use. No license is granted by implication
-190-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION HIN. TYP. ~IAX. UNIT

VDS=150V,VGS=OV,Tc=25"C - - 250 uA
IDSS
VDS=120V,VGS=OV,Tc=125"C - - 1000 u.-\
Drain-Source Breakdown Voltage V(BR)DSS ID=250UA, VGS=OV 150 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250UA 2.0 - 4.0 V
On-State Drain Current ID(ON) VDS=10V, VGS=10V IS - - A
Drain-Source ON Resistance RDS(ON) ID=lOA , VGS=lOV - 0.14 O.lS rl
Drain-Source ON Voltage VDS(ON) ID= lSA , VGS=10V - 2.S V
Rise Time l.r I D-10A - 60 ns
Turn-on Time ton 10Vn VI~~ ~I OVOUT - 90 ns
Switching Time 01H! f2 ,..:
Fall Time tf 10us .,; - 60 ns
Turn-off Time toff D.USI% (Zout=4.m) - 140 nn
Total ~ate Charge
VGS=10V, ID=22A, - 43 60 nC
Gate Source Charge Q2S VDS=120V - 1.6 - nC
Gate-Drain ("Miller") Charge Q2d - 27 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25"C)

Continuous Source Current IS - - - IS A
Diode Forward Voltage VSD IS= ISA , VGS=OV, Tc=~5"C - - 2.0 V
Reverse Recovery Time trr Tj=150"C, IF=ISA, - 650 - ns
Reverse Recovered Charge Qrr dIF/dtcIOOA/lJs - 4.1 - uC
TOSHIBA CORPORATION
- 191-

(7Z' -MOS)

CUOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in IDIII
DRIVE APPLICATIONS. .1II2!lllU...· >-
FEATURES:
~
..,~ '1II21.OJW[~ ~ !
t1 II . 1/ ~I~
Low Drain-Source ON Resistance : RDS(ON)=0.2OQ (Typ.)
1111.11 'D I
~
IDSS= 250~A(Max.) @ VDS=200V , "' .
dd
+1
3Cl2±Cl2
Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250~A ......'"
l~
¢4.o!~~~ ~ll ............
~ 2.:!1
. .... H
CHARACTERISTIC SYl'IBOL RATING UNIT
"
it'~'-E~
1 ki
'1/
dd
+1
d
..... .'" ~
0
Drain-Source Voltage VDSX 200 V 4.ClOIIAJ[

Drain-Gate Voltage (RGS=IHr2) VDGR 200 V
1. GATl!:
Gate-Source Voltage VGSS ±20 V 2- SOURCl!:
DRAIII (CAn)
DC(Tc=25·C) ID 16
JEDEC TO-204AE/TO-3
Drain Current DC(Tc=lOO·C) ID 10 A EIAJ
(Tc=25·C) PD W
Channel Temperature TCA 150 ·C
Storage Temperature Range Tstg -55"'150 ·C
CHARACTERISTIC SYl'IBOL MAX. UNIT
Thermal Resistance, Junction to Case Rth(j-c) 1.0 ·C/I.
Thermal Reslstance, Junction to Ambient Rth{j-a) 30 ·CN
.
-192-
TECHNICAL DATA

CHARACTERISTIC SYHBOL TEST CONDITION mN. TYP. MAX. UNIT
VDS=200V. VGS=OV.Tc=2SoC - - 250 \.I A
IDSS
VDS=1.60V • VGS=OV. Tc=12SoC - - 1000 \.IA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0\.lA. VGS=O\, 200 - - V
Gate Threshold Voltage Vth VDS=VGS. ID=250\.lA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV. ID=lOA 6 9 - S
On-State Drain Current ID(ON) VDS=lOV. VGS=lO\, 16 - - A
Drain-Source ON Resistance RDS(OS) ID=10A. VGS=lOV - 0.20 0.22 r2
Drain-Source ON Voltage VDS(ON) ID=16A • VGS=lOV - 3.S V
Reverse Transfer Capacitance Crss VDS=2SV. VGS=OV. f=lMHz - 300 pF
Turn-on Time ton lOVn VI~~ ~l OVOUT - 90 ns
Switching Time 0 .... ~ ,.:
Fall Time tf lO\.Is .J
VIN:tr.tf<Sns VDD=7SV
- 60 ns
Turn-off Time toff D.U:;l% (Zout=4.7r2) - 140 nE
Total Gate Charge
VGS=lOV. ID=22A, - 43 60 nC
Gate Source Charge QI!S VDS=160V - 16 - nC

Diode Forward Voltage VSD IS=16A • VGS=OV. Tc=2SoC - - 1.9 V
Reverse Recovery Time trr Tj=lSO°C. IF=18A, - 650 - ns
Reverse Recovered Charge Qrr dIF!dt=lOOA!\.IS - 4.1 - \.IC
TOBHIBA CORPORATION
-193 -
TPSHIBA FIELD EFFECT TRANSISTOR
TOSHIBA SEMICONDUCTOR Y T .F 2 4 3

(1[-MOS)
HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS.

.
CHOPPER REGULATOR DC-DC CONVERTER AND MOTOR
DRIVE APPLICATIONS.
Unit in DID
~ ~
.1112 !5.01lA1I'
FEATURES: i
,.,..,
i!12LOJW[,1
OJI--';;;
~
Low Drain-Source ON Resistance : RDS(ON)=0.2OQ (Typ.) I II
~1.5 Jlj
Low Leakage Current : IGss=±IOOnA(Max.) @VGS=±20V
IDSS= 2S0UA(Max.) @ VDS=ISOV
.,
dd
.
+1.,
3a.2±a.2
Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=2S0UA ....
...
l~
MAXIMUM RATINGS (Ta=2S a C)

1~5
+0.08 ~1I
1S~.2 "l
"""" ..'"
"''''
.0. dd
H
~
+1ell
I' l....!.l 0
"1/ ... '"'"
d
Drain-Source Voltage VDSX ISO V 4.a.oJW[

Drain-Gate Voltage (RGS=lMO) VDGR ISO V
1. GATII
Gate-Source Voltage VGSS ±20 V 2. SODRCII
DRAIN (CAn)
DC(Tc=2S aC) ID 16
J"IlDEC TO-204AE/TO-3
Drain Current DC(Tc=lOO·C) ID 10 A EIAJ"
(Tc=2S·C) PD W
Channel Temperature Tch ISO ac
Storage Temperature Range Tstg -SS'VISO aC
Thermal Resist«nce, Junction to Case Rth{j-c) 1.0 ·C/I'
Thermal ReSistance, Junction to Ambient RthU-a) 30 ·C/lv
-194-
TECHNICAL DATA

CHARACTERISTIC SYHBOL TEST CONDITION NIN. TYP. MAX. UNIT
VDS=lSOV,VGS=OV,Tc=2SoC - - 2S0 lJA
IDSS
VDS=120V,VGS=OV,Tc=12SoC - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0lJA, VGS=OV ISO - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2S0lJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=10V, ID=lOA 6 9 - S
On-State Drain Current ID(ON) VDS=10V, VGS=10V 16 - - A
Drain-Source ON Resistance RDS(ON) ID= lOA, VGS=10V - 0.20 0.22 fl
Drain-Source ON Voltage VDS(ON) .
ID=16A , VGS=lOV - 3.S V
Rise Time t~ I D= lOA - 60 ns
Turn-on Time ton lOVn VI~i ~I OVOUT - 90 ns
Switching Time o ...... r;: ,.:.:
Fall Time tf lOlJs .,; - 60 ns
VIN:tr,tf<Sns VDD=7SV
Turn-off Time toft D.U:;l% (Zout=4.7fl) - 140 ns
Total Gate Charge
VGS=lOV, ID= 22A, - 43 60 nC
sounCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S0C)

Diode Forward Voltage VSD IS= 16A , VGS=OV, Tc=2SoC - - 1.9 V
Reverse Recovery Time trr Tj=lS0°C, IF=18A, - 6S0 - ns
Reverse Recovered Charge Qrr dIF!dt=100A!lJs - 4.1 - lJC
TOSHIBA CORPORATION
-195 -
SEMICONDUCTOR YTP250
TOSHIBA SILICON N CHANNEL MOS TYPE
TECHNICAL DATA
or-HOS)

CHOPPER REGULATOR , DC-DC CONVERTER AND MOTOR Unit in IDIII
DRIVE APPLICATIONS.
~ ~
fll'2!'!.O ......
i rl21.0 IoIAl[ :I
FEATURES:
,.,.., ~ 1
Low Drain-Source ON Resistance: RDS(ON)=0.07G (Typ.) I II
Ojl---"-
High Forward Transfer Admittance : IYfsl=14S (Typ.) j61.S 1 1

I
Low Leakage Current : IGSs=±I00nA(Max.) @ VGS .. ±20V

"' .
.
IDSS= 250uA(Max.) @ VDS=200V
Enhancement-Mode : Vth=2.~.OV @VDS=VGS,ID=250~A
3o.2±o.2
dd
+1
........
l~
l~gV-;-)J ........... . ..
.....
MAXIMUM RATINGS (Ta=25°C) ~~'1 dd i
CHARACTERISTIC SYNBOL RATING UNIT ~./
'0- +1ca
...d '" .
0
Drain-Source Voltage VDSX 200 V 4o.0YAr.
Drain-Gate Voltage (RGS=IMQ) VDGR 200 V

1. GATII
Gate-Source Voltage VGSS ±20 V 2. SOURCII
DRAIII (CAn)
DC(Tc=25°C) ID 30
.rIlDEC TO-204AE/TO-3
Drain Current DC(Tc=lOO°C) ID 19 A EIA.r
Inductive Current (Clamped) lLp 120 A Weight : 15.88
(Tc=25°C) PD
Storage Temperature Range Tstl!. -55"'150 ·C
Thermal Resistance, Junction to Case Rth(j-c) 0.S3 °CN
Thermal Resistance, Junction to Ambient Rth(;-a) 30 °C/\~

TOSHIBA CORPORATION
-196-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta;25°C)

Gate Leakage Current IGSS VGss±20V, Vns;OV - - ±100 nA

VnS;200V,VGS=OV,Tc=25°C - - 250 lJA
IDSS
Vns=160V,VGS;OV,Tc=125°C - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS In=250lJA, VGS=O\' 200 - - V
Gate Threshold Voltage Vth Vns=VGS, ID=250lJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=10V, ID=16A 8 14 - S
On-State Drain Current ID(ON) VDS=lOV, VGS;lOV 30 - - A
Drain-Source ON Resistance RDS(ON) ID= l6A , VGS=lOV - 0.070 0.085 fl
Rise Time tr I D- l6A - 100 ns
Turn-on Time ton lOVn VIy~VOUT - 135 ns
Switching Time 01<->1 f2: 0:
Fall Time tf lOlJs"; 11"\ - 100 ns
VIN:tr,tf<5ns VDn=95V
Turn-off Time toff D.U:;;l% (Zout=4.7fl) - 225 nfl
Total Gate Charge
VGS=lOV. ID=38A, - 79 120 nC
Gate Source Charge QIZS VDS=160V - 37 - nC
SOUr.CE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta-25°C)

Diode Forward Voltage VSD IS=30A , VGS=OV, Tc=:!5°C - - 2.0 V
Reverse Recovered Charge Qrr dIF!dt=100A!lJs - 4.7 - lJC
TOSHIBA CORPORATION
- 197-
(1Z' -MOS)

CHOPPER REGULATOi, DC-DC CONVERTER AND MOTOR Unit in II1II
m2!'1.01lA'"
FEATURES:
..,.,i ~LOIW[II ~ ~
OJ-
·
·
Low Drain-Source ON Resistance: RDS(ON)=0.07G (Typ.)
High Forward Transfer Admittance : IYfsl=14S (Typ.)
~u lJ "
Low Leakage Current : IGSs=±100nA(Max.) @VGS=±20V
., .
· Enhancement-Mode: Vt
h=2.0-4.0V @ VDS=VGS,ID=250UA 3o.a±o.a
dd
..
+1
...
.-l
l~
I~g VaJJ """" ...... ~

MAXIMUM RATINGS (Ta=25'C) ~~.-:=!-.~ ~
.. dd ~
CHARACTERISTIC SYHBOL RATING UNIT ~/ ...
+1
d ..
Q
III
Drain-Source Voltage VDSX 150 V 4oo.01lAJ:.

Drain-Gate Voltage (RGS-Htrl) VDGR 150 V
L GAT.
Gate-Source Voltage VGSS ±20 V 2. BOURC.
DRAIII (cAn)
DC(Tc=25'C) ID 30
J"IIlDIllC TO-204AE/TO-3
Drain Current DC(Tc=lOO'C) ID 19 A IIlIAJ"
-. Pulse
Inductive Current (Clamped)
IDP
Itp
120
120 A
TOSHIBA
Weight : 15.8g
iTc z 25'C) PD W
Stor·age Temperature Range TstR -55"'150 'c
Thermal Resistance, Junction to Case Rth(j-c) 0.83 'C/I'!
Thermal Resistance, Junction to Ambient Rth(j-a) 30 'C/lv
Muximum Lead Temperature for Soldering 300 'C
-198 -
TOSHIBA SEMICONDUCTOR YT F 2 5 I
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. MAX. l1NIT

VDS=150V,VGS=OV,Tc=25°C - - 250 lJA
IDSS
VDS=120V,VGS=OV,Tc=125°C - - ·1000 lJA
Gate Threshold Voltage Vth VDS=VGS, ID=250lJA 2.0 - 4.0 V
Drain-Source ON Resist<:nce RDS(ON) ID=16A , VGS=lOV - 0.070 0.085 It
OutpuJ Capacitance Coss - 1200 pF
lOVI1 VIYr~rJvOUT
Rise Time t r- - 100 ns
Turn-on Time ton - 135 ns
Switching Time 0.... g u-i
Fall Time tf lOlJs .; - 100 ns
Turn-off Time toff D.U~l% (Zout=4.7i2) - 225 n"
Total Gate Charge 79
(Gate-Source Plus Gate-Drain) Qg - 120 nC
VGS=10V, ID=38A,

Diode Forward Voltage VSD IS= 30A , VGS=OV, Tc=25°C - - 2.0 V
Reverse Recovered·Charge Qrr dIF/dt=lOOA/lJs - 4.7 - lJC
TOSHIBA CORPORATION
-199-

( 1C-HOS)
HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS

CHOPPER REGULATOR. DC-DC CONVERTER AND HOWR Unit in mm
DRIVE APPLICATIONS. ~2!1.0"AY
FEATURES: i
..,..
!1121.01WrJ ;~,~i
. Low Drain-Source ON Resistance: RDS(ON)=O.09Q (Typ.) II
High Forward Transfer Admittance : IYfsl=14S (Typ. ) 161.5 'a j
"' ...
Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250UA
3a.2±a.2
dd
+1 .
..l
....
l~
I~gv";:] " ....... H

MAXIMUM RATINGS (Ta=25°C) ~~.:2 .~ dd
+1GO ~
'.."
Q
I' 1
d
CHARACTERISTIC SYMBOL RATING UNIT / ....
Drain-Source Voltage VDSX 200 V 4.a.OIWr
Drain-Gate Voltage (RGS=HK2) VDGR 200 V
1. GATB
Gate-Source Voltage VGSS ±20 V 2. SOURCII
DRAIII (CAn)
DC(Tc=25°C) ID 25
J"IlDl!lC TO-204AE!TO-3
Drain Current DC(Tc=l00°C) ID 16 A lUAJ"
Inductive Current (Clamped) hp 100 A Weiiht : 15.88

(Tc=25°C) PD
Thermal Resistance, Junction to Ambient Rth(;-a) 30 °C!W
-200-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2s"C)

CHARACTERISTIC SYMBOL TEST CONDITION HlN. TYP. MAX. Ul'>IT
VDS=200V,VGS=OV,Tc=2s"C - - 250 \JA
IDSS
VDS=160V,VGS=OV,Tc=12s"C - - 1000 \JA
Drain-Source Breakdmm Voltage V(BR)DSS ID=2s0\JA, VGS=OV 200 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2s0IJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=IOV, ID=16A 8 14 - S
On-State Drain Current ID(ON) VDS=IOV, VGS=IOV 25 - - A
Drain-Source ON Resistance RDS(ON) ID= 16A , VCS=IOV - 0.09 0.12 n
Drain-Source ON Voltage VDS(ON) ID=2sA , VGS=lOV - 2.5 V
Reverse Transfer Capacitance Crss VDS=2sV, VCS=OV, f=IMHz - 500 pF
0...... VIT~rOlfI
lOVIl -
Turn-on Time ton 135 ns
Switching Time :;:: .,;
Fall Time tf lO\Js ..; - 100 ns
VIN:tr,tf<sns VD =9sV
Turn-off Time toff D.U~I% (Zout=4.7n) - 225 ns
Total Gate Charge
VGS=lOV. ID=38A. - 79 120 nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2s"C)

Pulse Source Current ISp - - - .100 A
Diode Forward Voltage VSD IS= 2sA • VGS=OV, Tc=2s"C - - 1.8 V
Reverse Recovery Time trr Tj=lsO"C. IF=30A, - 750 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/\Js - 4.7 - \JC
TOSHIBA CORPORATION
-201-
( 1C-HOS)

CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in IIIIlI
DRIVE APPLICATIONS.
FEATURES:
..
~
f1J2!1./)vav
f1J21.OJW[11 ~iiil~~
..,to 11 OJ
Low Drain-Source ON Resistance : RDS(ON)=0.09n (Typ.)
High Forward Transfer Admittance : iYfsi=14S (Typ.) (41.5 'g j
Low Leakage Current : IGSS=±100nA(Max.) @VGS=±20V
"'.
dd
+1
30.2±0.2 II!
Enhancement-Mode : Vth~2.~.OV @ VDS=VGS.ID=250~A ....
....
l~
1~5
+0.0 S J,<Jl """- ....
+1 ~
2
MAXIMUM RATINGS (Ta=2S0C) ~. 3
.~ ·1:;:-;
CHARACTERISTIC
SYl'IBOL
VDSX
RATING
150
UNIT
V
M./ &0.0JW[
d'" cd
.... or
0

1. GATB
Gate-Source Voltage VGSS ±20 V 2. SOURCB
DRAIII (CASZ)
DC(Tc=25°C) ID 25
JBDl!lC TO-204AE/TO-3
Drain Current DC(Tc=lOO°C) ID 16 A l!lIAJ

(Tc=2S0C) PD
Thermal Resistance, Junction to Case Rth(j-c) 0.83 °C/l,'
Thermal Resistance, Junction to Ambient Rth(;-a) 30 °C/I'
The information contained herein is presented only as a gUide tor the applIcations of our
TOBHIBA CORPORATION
or otherwise under any patent or patent rights of TOSHIBA or others,
-202-
TECHNICAL DATA

CHARACTERISTIC SnlBOL TEST CONDITION HlN. TYP. HAX. UNIT
Gate Leakage Current IGSS VGS=±20V, VDS~OV - - ±100 nA
VDS=150V,VGS=OV,Tc=25·C - - 250 uA
IDSS
VDS=120V,VGS=OV,1'c=125°C - - 1000 \lA
Drain-Source ON Resistance RDS(ON) ID= 16A , VGS=10V - 0.09 0.12 rl
Drain-Source ON Voltage VDS(ON) ID=25A , VGS=10V - 2.5 V
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=lHHz - 500 pF
Rise Time t.r I D= 16A - 100 ns
Turn-on Time ton 10"11 VIy~ ~rVOUT - 135 ns
Switching Time o ..... ~ vi
Fall Time tf lOllS .,; - 100 ns
Turn-off Time toff D.U~l% (Zout=4.7rl) - 225 ns
Total 'Gate Charge 79 120
VGS=10V, ID=38A,
Gate Source Charge QI(S VDS=l20V - 37 - nC
Gate-Drain ("Miller") Charge Ql(d - 42 - nC
sounCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)

CHARACTERISTIC SYHBOL TEST CONDITION HIN. TYP. HAX. UNIT
Reverse Recovery Time trr Tj=150·C, IF=30A, - 750 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/\ls - 4;7 - uC
TOSHIBA CORPORATION
-203-
Of-MOS)

CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
DRIVE APPLICATIONS.
,. ¢2Il.OloIAX.
Unit 1n
,.
<
mm
FEATURES: ~ ~2l.0 loIAX.~ ••

~
",1-
;II
~
Low Drain-Source ON Resistance : RDS(ON)-D.an (Typ.) '"
t1 11 . II oj

+flOIl
!lIl.o-ao ...
~
Low Leakage Current : IGsss±lOOnA(Max.) @ VGS=±20V
.,,,
IDSSs 250UA(Max.) @ VDS=500V dd
+1
3fl2±fl2
. Enhancement-Mode : Vth=2.~.OV @ VDsaVGs,Io=250uA ~
...
1~

1¢4.o!~~~ v--; 11 ............ ...01 ..
<
~TI .~
dd ;II
+1 0
CHARACTERISTIC SYMBOL RATIXG UNIT 1"-1/ '"d.... '01"

Drain-Source Voltage VDSX 500 V 4. flO MAX.
Drain-Gate Voltage (RGS*lMn) VOGR 500 V
1. GATE
DRAIN (CASE)
DC(Tc=25°C) 10 8
JEDEC TO-204.IU/TO-3
Drain Current DC(Tc=100°C) 10 5 A
EIAJ TC-3,TB-3
Pulse lOp 32 TOSHIBA 2-21E1B
(Tc=25°C) Po 125 W
Thermal Resist,~nce. Junction to Case Rth(j-c) 1.0 °C/W
TOSHISA CORPORATION
-204-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2S'C)

Orain Cut-off Current
VOS=SOOV,VGS=OV,Tc=25°C - - 250 UA
lOSS
VOS=400V,VGS=OV,Tc=125°C - - 1000 UA
Drain-Source Breakdown Voltage V(BR)OSS IO=2S0UA, VGS=OV 500 - - V
Gate Threshold Voltage Vth VOS=VGS, IO=2S0UA 2.0 - 4.0 V
Forward Transfer Admittance l¥fsl VOS=lOV, IO=4A 4 6.5 - S
On-State Orain Current ID(ON) VOS=10V, VGS=10V 8 - - A
Drain-Source ON Resistance ROS(ON) IO=4A , VGS=lOV - 0.8 0.85 n
Drain-Source ON Voltage VOS(ON) IO=8A , VGS=lOV - 7.0 V
Reverse Transfer Capacitance Crss VOS=2SV, VGS=OV, f=lMHz - 150 pF
Rise Time tr 10= 4A - 15 ns
Turn-on Time ton lOVJ1 VIYl§loVOUT - 50 ns
Switching Time 0..... ~ II)
Fall Time tf lOus ..; - 30 ns

VIN:tr,tf<5ns VOo=200V
Turn-off Time toff O.U:Ol% (Zout=4.7Q) - 120 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg VGS=lOV, IO=10A. - 42 60 nC
Gate Source Charge Qszs VOS=400V - 20 - nC
SOURCE-ORAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)

Oiode Forward Voltage VSD IS=8A • VGS=OV, Tc=25°C - - 2.0 V
Reverse Recovery Time trr Tj=lSO·C, Ir-8A. - 1100 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/us - 6.4 - IJC
TOBHIBA CORPORATION
-205-
( 1l'-MOS)

DRIVE APPLICATIONS. ¢25.0MAX. ~
x.. ,.; :&
FEATURES: ~2LOMAX~l ;i ~
Low Drain-Source ON Resistance : ROS(ON)=0.8Q (Typ.)
.,'"
:&
II 11 "ll-
01
High Forward Transfer Admit tance : IYfsl=6.5S (Typ.) 1

¢LO:!:~g~
Low Leakage Current : IGSS=±IOOnA(Max.) @ VGS=±20V
",0-
10SS= 250~A(Max.) @ VOS=450V dd
+1
3Cl2±Cl2
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=2S0~A ~
..;
l~
04.0:!:~~~ l/;1 ~ 0-01
.
,.;
~T
MHnHJ~1 RATINGS (Ta=2S·C) .$- dd
+10>
:&
0
CHARACTERISTIC SYNBOL RATING UNIT

./
d
..; '""'
Dr3in-Source Voltage VOSx 450 V 4ClOMAX.
Drain-Gate Voltage (RGS=IMQ) VDt;R 450 V
L GATE
DRAIN (CASE)
OC(Tc=25·C) 10 8
JEDEC TO-204IlA/TO-3
Drain Current DC(Tc=100·C) 10 5 A
EIAJ TC-3,TB-3
Pulse lOp 32 TOSHIBA 2-21EIB
Inductive Current (Clamped) Itp 32 A Weight : lS.8g
Orain Power Dissipation
(Tc=2S0C) Po 125 W
Storage Temperature Range TstR -55"'150 °C
CHARACTERISTIC SYMBOL KU. UNIT
Muximum Lead Temperature for Soldering ·C
TOSHIBA CORPORATION
-206-
TECHNICAL DATA

CHARACTERISTIC SY~BOL TEST CONDITION HIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS=±20V, Vns=OV - - ±100 nA
VDS=4s0V,VCS=OV,Tc=2soC - - 250 \.JA
VDS=360V,VGS=OV,Tc=12soC - - 1000 \.JA
Drain-Source Breakdown Voltage V(BR)DSS In=250l.!A, VCS=OV 450 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250\.JA 2.0 - 4.0 V
Forward Transfer Admittance IYfsi VDS=lOV, ID=4A 4 6.5 - S
On-State Drain Current ID(O:-l) VDS=lOV, VGS=lOV 8 - - A
Drain-Source ON Resistance RDS(ON) ID=4A , VGS=10V - 0.8 0.85 11
Drain-Source ON Voltage VDS(ON) In=8A , VGS=10V - 7.0 V
Rise Time tr ID=4A - 15 ns
Turn-on Time ton lOVn VIyfrVOUT - 50 ns
Switching Time o ..... ~ Si
Fall Time tf lO\.JS ..; - 30 ns
VI:-I:tr,tf<5ns VDD=200V
Turn-off Time toff D.U~I% (Zout=4.711) - 120 ns
Total Gate Charge
(Cate-Source Plus Gate-:.Drain) Qg - 42 60 nC
VGS=10V, ID=10A,
SOURCE-DRAIN DIODE RATINCS AND CHARACTERISTICS (Ta=2s0C)

CHARACTERISTIC SYMBOL TEST CONDITIO:-l HIN. TYP. NAX. UNIT
Diode Forward Voltage VSD IS=8A , VCS=OV, Tc=25°C - - 2.0 V
Reverse Recovery Time trr Tj=IS0°C, IF=8A. - 1100 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/\.Js - 6.4 - \.JC
TOBHIBA CORPORATION
-207 -
Or-MOS)

CHOPPER REGULATOR, DC-OC CONVERTER AND MOTOR Unit in mm
DRIVE APPLICATIONS.
FEATURES:
..
~
¢25.0I4AX.
kuol4Ax ..
J .,'- ;j
~
:II
~
...
Low Drain-Source ON Resistance : RDS(ON)=o.8n (Typ.) t1
n ' II
'"
. ~igh Forward Transfer Admit tance : IYfsl=6.5S (Typ. )
Low Leakage Current : IGSs=±lOOnA(Max.) @ VGS=±20V ~1.0±~8~
., ...
dd
3Cl2±Cl2 +1
En~ancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250UA !l....
1~
I~4.0-Cl15
+Cl08 ~ ...........
2 NO
g
~ ./
dd
-E)-
+1
'"
d
.... ..'"
0
Drain-Source Voltage VDSX 500 V 4ClOI4AX.

Drain-Gate Voltage (RGS=IMn) VDGR 500 V
1. GATE
Gate-S9urce Voltage VGSS ±20 V SOURCE
2.
DC(Tc=25°C) DRAIN (CASE)

ID 7
JEDEC TO-204MA/TO-3
EIAJ TC-3,TB-3
Inducti.ve Current (Clamped) ILP 28 A Weight : 15.8g
Drain Power DiSSipation 125
(Tc=25°C) PD W
CHARACTERISTIC SYNBOL MAX. UNIT
Thermal Resistance, Junction to Ambient RthCi-a) 30 °C/W
TOSHIBA CORPORATION
or otherwise under any patent or patent rights of TOSHIBA or others,
-208-
TECHNICAL DATA

Gate Leakage Current IGSS VGS=±20V, VDS=OV - - ±lOO nA

VDS=500V ,VGS=OV, Tc=25°C - - 250 lJA
IDSS
VDS=400V ,VGS=OV, Tc=125°C - - 1000 lJA
Drain-Source Breakdo"m Voltage V(BR)DSS ID=250lJA, VGS=OV 500 - - V
Forward Transfer Admittance IYfs I VDS=lOV, ID= 4A 4.0 6.5 - S
Drain-Source ON Resistcnce RDS(ON) ID= 4A , VGS=lOV - 1.0 1.1 Q

Switching Time
Rise Time
Turn-on Time
Fall Time
tr
ton
tf
lOVn
0..... VgI
10lJS..-t
VIN:tr,tf<5ns
y
ID=4A
i gr
If')
7
VOUT -
\DD=200V
-
-
15
50
30
ns
ns
ns
Turn-off Time toff D.U:;l% (Zout=4.7rI; - 120 ns
Total Gate Charge
VGS=lOV, ID=lOA. - 42 60 nC
Gate Source Charge Ogs VDS:400V - 20 - nC

Reverse Recovered Charge Qrr dIF/dt=lOOA/lls - 6.4 - lJC
TOSHIBA CORPORATIDN
-209-
( 1C-MOS)

DRIVE APPLICATIONS.
FEATURES:
..
~
..,
f/l'25.0I4AX •
~21.014AX J .
~
i~
Low Drain-Source ON Resistance : RDS(ON)=0.8n (Typ.) .., II ~I-
· 11
~igh Forward Transfer Admittance : IYfsl=6.5S (Typ.)
+0. 09
)211.0-0.04 1
· Low Leakage Current : IGSS=±lOOnA(Max.) @ VGS=±20V
.,,,
dd
+1
3Cl2±Cl2
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250~A ~
....
l~
L4.o::!:~~~ ~J, ..
~
"
1.<: . I
./
'0- +1
"'.
dd
'"..... '"
d
~
0
Cl
Drain-Source Voltage VDSX 450 V 4 ClOI4AX.

1. GATE
Gate-Source Voltage V~SS ±20 V 2. SOURCE
DRAIN (CASE)
DC(Tc=25°C) ID 7
JEDEC TO-20~IIA/TO-3
Drain Current DC(Tc=lOO·C) ID 4 A EIAJ TC-3,TB-3
Inductive Current (Clamped) ILP 28 A Weight ': 15.8g
(Tc=25·C) PD
Storage Temperature Range Tstg -55"'150 ·C
Thermal Resistance, Junction to Ambient Rth(i-a) 30 ·C/W
TOSHIBA CORPORATION
- 210-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION mN. TYP. MAX. UNIT
VDS= 450V, VGS=OV, Tc=25°C - - 250 IJA
Drain-Source Breakdm<n Voltage V(BR)DSS ID=250\JA, VGS=OV 450 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250\JA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV, ID=4A 4.0 6.5 - S
Drain-Source ON Resist&nce RDS(ON) ID=4A , VGS=lOV - 1.0 1.1 rI
Rise Time tr I D= 4A - 15 ns
Turn-on Time ton lOVJl VI!1~ §IoVOUT - 50 ns
Switching Time o ..... f2 '"
Fa1l Time tf lO\Js"'; I - 30 ns
VIN:tr,tf<5ns \DD=200V
Turn-off Time toff D. U~l% (Zout=4.7r1; - 120 ns
VGS=lOV, ID=lOA,

CHARACTERISTIC SYMBOL TEST CONDITION ~IlN • TYP. NAX. UNIT
Diode Forward Voltage VSD IS=7A , VGS=OV, Tc=:!5°C - - 1.9 V
TOBHIBA CORPORATION
-211-
(7l' -MOS)

CHOPPER REGULATOR , DC-DC CONVERTER AND MOTOR Unit in mm
DRIVE APPLICATIONS.
~
FEATURES: .><
::II
¢25.0MAX.
1¢21.0MAX~1i ><
!I~
::II
Low Drain-Source ON Resistance : ROS(ON}=0.3!1 (Typ.) '"

<"l
II 11 oJ
High Forward Transfer Admittance : iYfsi=llS (Typ.)

+1109
j2fl.O-C.O 4
~
Low Leakage Current : IGSS=±10OnA(Max.) @ VGS=±20V
IOSS= 25QuA(Max.) @ VOS=500V
"',..
dd
+1
31l2±112
Enhancement-Hode : Vth=2.~,OV @ VOS=VGS,ID=250UA ...'"'"'
l~
~1:\XnlUM RATINGS (Ta=25'C)

+1108
04.0-1115 ~
~~.
2
'f
""'"
.~~
,..Ol
dd
+1
..><
::II
0
CHARACTERISTIC
SYMBOL RATING
500
UNIT
V
~./ ...'" '"
d Ol
VDSX '1l0MAX~
Drain-Gate Voltage (RGS=l}m) VOGR 500 V
1. GATE
DRAIN (CASE)
DC(Tc=25'C) 10 13
JI!:DEC TO-204Io1A/TO-3
Drain Current DC(Tc=lOO°C) 10 8 A
EI'AJ TC-3,TB-3
Drain Power Oissipation
(Tc=25°C) Po 150 W
Storage Temperature Range Tstg -55"'150 'c
THERMAk CHARACTERISTICS
CHARACTERISTIC Sy}IBOL MAX. UNIT
Thermal ReSistance, Junction to Case Rth(j-c) 0.83 'C/W
Thermal ReSistance, Junction to Ambient Rth(j-a) 30 °C/W
Purposes (1.6mm from case for 10 seconds) h 300 'c
The information contained herein is presented only as a guide for the apphcatJOns 01 our
TOSHIBA CORPORATION
-212-
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST COt>DITION MIN. TYP. MAX. U~IT
Gate Leakage Current IGSS VGS=t20V, VDS=OV - - tl00 nA

VDS=500V,VGS=OV,Tc=25°C - - 250 ]JA
VDS=400V,VGS=OV,Tc=125°C - - 1000 ]JA
Drain-Source Breakdown Voltage V(BR)DSS ID=250]JA, VGS=OV 500 - - V
On-State Drain Current ID(O:l) VDS=lOV, VGS=lOV 13 - - A
Drain-Source ON Resistance RDS(O:l) ID=7A , VGS=10V - 0.3 0.4 It
Turn-on Time ton 10V]1 VI]1~VOUT - 85 ns
Switching Time 0..... ~ g
Fall Time tf 10IJs .J - 70 ns
Vn;: tr, tf<5ns VDD= 210V
Turn-off Time toff D. U:;l% (Zout=4.71t) - 220 ns
Total Gate Charge
VGS=lOV, ID=16A, - 82 120 nC

Diode Forward Voltage VSD IS=13A, VGS=OV, Tc=25°C - - 1.4 V
Reverse Recovery Time trr Tj=lS0°C, IF= 13A, - 1300 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/]Js - 7.4 - IJC
TOBHIBA CORPORATION
-213-
(7C -MOS)

CHOPPER REGULATOR , DC-DC CONVERTER ANO MOTOR Unit in mm
DRIVE APPLICATIONS.
§.~~
¢25.0lolAX.
FEATURES: ..
><
:&
1¢2LoMAX,1
I
LOI. Dra in-Source ON Resistance : ROS(ON)=0.3n (Typ.) '"01 If II ol
High Forward Transfer Admittance: IYfsl=llS (Typ.)

+U09
0'1.0-0.04
~I
Low Leakage Current : IGSs=±lOOnA(Max.) @ VGS=±20V
IOSS= 250UA(Max.) @ VOS=450V
"',..
dd
+1
3U2±U2 <q
Enhancement-Mode : Vth=2.~.OV @ VOS=VGS,IO=250UA rl
rl
1~
+U08 ~l
~IAXn1UH RATINGS (Ta=25°C)

04.0-U15 2
X~.
T
"-'0- ,..0.
Od
..><
::Ii
a
+1
CHARACTERIST[C SDIBOL RATING UNIT ~. '"d '"
0.
/'" rl
Drain-Source Voltage rOSX 450 V 4.UOlolAX.

Drain-Gate Voltage (RGS=IMn) VOGR 450 V
L OATE
DRAIN (CASE)
OC(Tc=25°C) 10 13
JEDEC TO-204.IIA/TO-3
Drain Current OC(Tc=lOO°C) 10 8 A
ErAJ TC-3,TB-3
Drain Power Dissi.pation
(Tc=25°C) Po 150 W
THER~AL CHARACTERISTICS
Thermal ReSistance, Junction to Ambient Rth(j-a) 30 °C/W
Purposes (l.6mm from case for 10 seconds) TL 300 °C
The information contained herein. is presented only as a guide for the applications of our
-214-
TECHNICAL DATA

VDS=450V. VGS=OV.Tc a 25°C - - 250 uA
IDSS
VDS=360V. VGS=OV. Tc-125°C - - 1000 uA
Drain-Source Breakdown Voltage V(BR)DSS ID=250uA. VGS=OV 450 - - V
Gate Threshold Voltage Vth VDS=VGS. ID=25OUA 2.0 - 4.0 V
Forward Transfer Admittance IUsl VDS=lOV. ID=7A 6 11 - S
On-State Drain Current ID(ON) VDS=lOV. VGS=IOV 13 - - A
Drain-Source ON Resistance RDS(ON) ID=7A • VGS=lOV - 0.3 0.4 rl
Drain-Source ON Voltage VDS(ON) ID=13A • VGS=lOV - 4.3 V
Reverse Transfer Capacitance Crss VDS=25V. VGS=OV. f=lMHz - 200 pF
Turn-on Time ton lOVJl Vltr~ ~f OVOUT - 85 ns
Switching Time 0.....:2 C'1
Fall Time tf lOus .J - 70 ns
VIN:tr. t f<5ns VDD=210V
Turn-off Time toff D.U:H% (Zout=4.7rl) - 220 ns
Total Gate Charge
VGS=IOV. ID-16A, - 82 120 nC

Diode Forward Voltage VSD IS=13A • VGS=OV. Tc=25·C - - 1.4 V
Reverse Recovery Time trr Tj=150·C. IF=13A. - 1300 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/us - 7.4 - uC
TOSHIBA CORPORATION
- 215-
(1C-MOS)

DRIVE APPLICATIONS.
FEATURES:
..
<C
..,..,::s
Ji!l'25.0MAX •
1¢21.OMAX ,I ..
~
~
;;l
Low Drain-Source ON Resistance : RDS(ON)=O.4n (Typ.) II II "
01 ' -
High Forward Transfer Admittance : IYfsl=l1S (Typ.)
+Cl09
J1l'LO-ClO~
~
Low Leakage Current : IGSS=±lOOnA(Max.) @ VGS:±20V
00""
IDSS= 250uA(Max.) @ VDS=500V dd
+1
Enhancement-Mode : Vth=2.0-4.0V @ VDS=VGS,ID=250UA 3Cl2±Cl2
......
IQ
1~
MAXIMU~I RATINGS (Ta=25°C)

¢4.0:!:~~~ V"'; 1 .......... N" ..
<C
~I
.>-: dd ::s
+1 0
en
CHARACTERISTIC SYMBOL RATING UNIT 1 ...
./
d
.... '"
N
Drain-Source Voltage VDSX 500 V 4ClOMAX.

L GATE
DRAIN (CASE)
DC(Tc=25°C) ID 12
JEDEC TO-204I1A/TO-3
Drain ClIrrent DC(Tc=lOO°C) ID 7 A
EIAJ TC-3,TB-3
Inductive Current (Clamped) hp 48 A Weight : l5.8g
(Tc=25°C) PD 150 W
CHARACTERISTIC SYHBOL MAX. UNIT
Thermal Resistance, Junction to Case Rth(j-c) 0.83 °C/rl
or otherwise under any patent or patent righ Is of TOSHIBA or others. TOSHIBA CORPORATION
- 216-
TECHNICAL DATA

VDS=500V,VGS=OV,Tc=25°C - - 250 ].JA
IDSS
VDS=400V,VGS=OV,Tc=125°C - - 1000 ].JA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0;JA, VGS=OV SOD - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2S0].JA 2.0 - 4.0 V
Drain-Source ON Resistsnce RDS(ON) ID= 7A , VGS=lOV - 0.4 O.S II
Drain-Source ON Voltage VDS(ON) ID=12A , VGS=lOV - S.3 V
Rise Time tr I D= 7A - SO ns
Turn-on Time ton lOVn VIYi gIOVOUT - 8S ns
Switching Time 0...... g 0')
Fall Time tf lO].Js ..; - 70 ns

VIN:tr,tf<Sns VDD=2l0V
Turn-off Time toff D. U~l % (Zout=4.7i"l; - 220 ns
VGS=lOV, ID=16A, - 120 nC

CHARACTERISTIC SYMBOL TEST CONDITIO:-l NIN. TYP. ~lAX. UNIT
Diode Forward Voltage VSD IS=12A , VGS=OV, T,:=~SoC - - 1.3 V
Reverse Recovered Charge Qrr dIF/dt=lOOA/].Js - 7.4 - ].JC
TOBHIBA CORPORATION
- 217-
TECHNICAL DATA SILICON H CHAMNEL MOS TYPE
(7(-MOS)

DRIVE APPLICATIONS.
FEATURES:
~
<
¢25.0MAX.
I ~ ~
:II 1¢21.0MAX.
~ ~
Low Drain-Source ON Resistance : RDS(ON)=D.4n (Typ.) ..,
<'l
II II gJ-
. High Forward Transfer Admittance : IYfsl=l1S (Typ.)
+0. 09 1
Low Leakage Current : IGSS=±lOOnA(Max.) @ VGS=±20V ~1.0-0.04
IDSS= 2s0~A(Max.) @VDS=4s0V "'

...
dd
+1
30.2±0.2
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=2s0~A
...~
l~
MAXIMUM RATINGS (Ta=2s0C)

¢4.0!~~g ~ll ~
~~. TI '~r
,..'"
dd
.
<
:II
+1 0
CHARACTERISTIC SYMBOL RATING UNIT ~.I '" ''""

d
1/ ....
Drain-Source Voltage VDSX 450 V 40.01lAX.
1. GATE
DRAIN (CASE)
DC(Tc=2s0C) ID 12
JEDEC TO-204IfA/TO-3
Drain Current DC( Tc=1 OO°C) II) 7 A
EIAJ TC-3,TB-3
Inductive Current (Clamped) hp 48 A Weight .: IS.8g
(Tc=2S0C) PD W
TOSHISA CORPORATION
- 218-
TECHNICAL DATA


IDSS
Forward Transfer Admittance jYfsj VDS=lOV, ID=7A 6 11 - S
On-State Drain Current ID(ON) VDS=lOV, VGS=10V 12 - - A
Drain-Source ON Resistance RDS(ON) ID= 7A , VGS=10V - 0.4 0.5 r2
Rise Time ~r
I D- 7A - 50 ns
Turn-on Time ton lOVJl VIy~ ~! OVOUT - ns
Switching Time 0...... g g 85
Fall Time tf lOlJs ..; - 70 ns
VIN:tr,tf<5ns VDD=2l0V
Turn-off Time toft D. U::;l% (Zout=4.7r2i - 220 ns
Total· Gate Charge
VGS=10V, ID=16A, - 82 120 nC

Reverse Recovery Time trr Tj=150°C, IF= l3A, - 1300 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/\.Is - 7.4 - lJC
TOBHIBA CORPORATION
-219-
(lC-MOS)

Unit in !lUll
DRIVE APPLICATIONS. 1 a.3lo1AX. ;;I:l.6:ta.2
~L.
FEATURES: i.Lt!:::c 13i
XV ,;
~ <
Low Drain-Source ON Resistance: ROS(ON)=0.2Sn (Typ.)
,; .,,.
<
..,c,
:s '"
~
Low Leakage Current : IGSS=±SOOnA(Max.) @VGS=±20V ,

IOSS= 2SQuA(Max.) @ VOS=lOOV r--;!
I .z
. Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=2S0UA
I t
i ;
LHIAX. ,!
!
I
I
!
I
..,
0
... ,
0.75 . Ii I
2.5~
,;
2.5~
MAXIMUM RATINGS (Ta=2S0C) ~
CHARACTERISTIC
SYMBOL
VOSx
RATING
100
UNIT
V
50:f
Col
t1d
...
r
Ii)
•• '
·1 ~2-3-
WtJ !Q
ci
t
....
Drain-Gate VoltAge (RGS=IMn) VOGR 100 V I. GATE

Gate-Source Voltage VGSS ±20 V 2. DRAU (HEAT SINK)
3. SOURCE'
DC(Tc=2S0C) ID 8
J!:DEC TO-220AB
Orain Current DC(Tc=lOO°C) 10 5 A EIAJ SC-~6
Pulse IDP 32 TOSHI!lA 2-10A3B
Inductive Current (Clamped) Itp 32 A \.,reight : 1.9g
Drain Power Oissipation
(Tc=25°C) Po 40 W
Storage Temperature Range Tstll -SS'V1S0 °C
CHARACTERISTIC SYMBOL MAX. UnT
Thermal Resistance, Junction to Ambient Rth( i-a) 80 °C/W
The information contained herein. is presented only as a guide for the applications of our
-220-
TECHNICAL DATA

Gate Leakage Current ICSS VGS=±20V, VDS=OV - - ±SOO nA
VDS= 100V, VGS=OV,Tc=25°C - - 250 ~A
IDSS
VDS=80V ,VGS=OV,Tc=125°C - - 1000 ~A
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0~A, VCS=OV 100 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250~A 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=10V, ID=4A 1.5 2.9 - S
On-State Drain Current ID(ON) VDS=10V, VCS=lOV 8 - - A
Drain-Source ON Resistance RDS(ON) ID=4A , VGS=lOV - 0.25 0.30 rl
Drain-Source ON Voltage VDS(ON) ID=8A , VCS=lOV - 2.2 V
Turn-on Time ton 10Vn VIli~VOUT - 110 ns
Switching Time 0..... g ~
Fall Time tf lOlls If) .....
- 70 ns
Turn-off Time toff D. U,;l% (Zout= SOil) - 170 ns
Total Gate Charge 10 IS
VGS=lOV, ID=IOA, - nC

Diode Forward Voltage VSD IS=8A , VGS=OV, Tc=2SoC - - 2.S V
Reverse Recovered Charge Qrr dIF/dt=lOOA/lls - 1.6 - IlC
TOSHIBA CORPORATION
- 221-
(7C -MOS)

Unit in !l'JD
1!l311AX. ;z13.6±!l2
DRIVE APPLICATIONS.
FEATURES:
Low Drain-Source ON Resistance: ROS(ON)=0.2sn (Typ.)
High Forward Transfer Admittance: /Yfs/=2.9S (Typ.)
Low Leakage Current: IGSS=±sOOnA(Max.) @VGS=±20V
IOSS= 2sOUA(Max.) @VOS=60V
• Enhancement-Mode Vth=2.~.OV @ VOS=VGS,IO=2s0uA

Drain-Source Voltage VDSX 60 V
Drain-Gate Voltage (RGS=IMn) VDGR 60 V 1. GHE
Gate-Source Voltage VGSS ±20 V 2. DRAIY (HEAT SUK)
3. SOURCE
DC(Tc-25·C) ID 8
n:DEC TO-230AB
Drain Current DC(Tc=I00·C) 10 5 A
Pulse IDP 32 TOSHIBA 2-10A3B
(Tc=25·C) PD 40 W
Storage Tempera~ure Range Tst\! -55"-150 ·C
Thermal ReSistance, Junction to Case Rth(j-c) 3.12 ·C!W
Thermal Resistance. Junction to Ambient Rth(j-a) 80 ·C!W
products. No responsibility is assumed by TOSHIBA for any infringements of patents or "ther
TOSHIBA CORPORATION
-222-
TOSHIBA SEMICONDUCTOR YT F S 2 1
TECHNICAL DATA

Gate Leakage Current IGSS VGS=±20V, VDS=OV - - ±SOO nA
VOS=60V,VGS=OV,Tc=2S·C - - 2S0 UA
Drain Cut-off Current lOSS
VOS=48V ,VGS=OV,Tc=12S·C - - 1000 UA
Drain-Source Breakdown Voltage V(BR)DSS IO=2S0UA, VGS=OV 60 - - V
Gate Threshold Voltage Vth VDS=VGS, IO=2S0uA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VOS=lOV, ID=4A 1.S 2.9 - S
On-State Drain Current IO(ON) VOS=lOV, VGS=lOV 8 - - A
Drain-Source ON Resistance ROS(ON) IO=4A , VGS=lOV - 0.25 0.30 rI
Drain-Source ON Voltage VOS(ON) IO=8A , VGS=10V - 2.2 V
Reverse Transfer Capacitance Crss VOS=2SV, VGS=OV, f=lMHz - 100 pF
Turn-on Time ton 10VJ1 V I l i l ~f OVOUT - 110 ns
Switching Time 0..... g .
Fall Time tf 10us If)
VIN:tr,tf<Sns
r-
VOO=3QV
- 70 ns
Turn-off Time toff O.U:il% (Zout=SOrl) - 170 ns
Total Gate Charge
VGS=lOV, IO=lOA, - 10 IS nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S·C)

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. NAX. maT
Diode Forward Voltage VSO IS=8A , VGS=OV, Tc=2S·C - - 2.S V
Reverse Recovery Time trr Tj=lSO·C, IF=8A, - 280 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/us - 1.6 - \.!C
TOBHIBA CORPORATION
-223-
( 1l'-MOS)

Unit in mID
CHOPPER REGULATOR, DG-DC CONVERTER AND MOTOR
10.3 MAX. ¢3.6:t0.2
DRIVE APPLICATIONS.
J
i~r ;t~
FEATURES: ...'.,"'
~ M
<
Low Drain-Source ON Resistance: RDS(ON)=O.30n (Typ.) ,; ..,
:0;
. High Forward Transfer Admittance : IYfsl=2.9S (Typ.) <

..,'"'
0/
...'"
Low Leakage Current : IGSs=±500nA(Max.) @ VGS=±20V I-
IOSS= 250~A(Max.) @ VOS=lOOV r-- ...z
• Enhancement-Mode : Vth=2.~.OV @ VOS=VGS,IO=250UA l.eMAX. II :0;
..,...
0
,
0.7 e
I
MAXIMUM RATINGS (Ta=25°C) 2.~40 2.~40
..:li
CHARACTERISTIC
SYMBOL
VDSX
RATING
100
UNIT
V
i!1f .M~,
Nit)
..,
.
...
I
d
-1
'..
~
~2-3-
0·
oJ
Orain-Gate Voltage (RGS=lMCQ) VOGR 100 V 1. GATE
Gate-Source Voltage ±20 V 2. DRAIN (HEAT SINK)

VGSS
3. SOURCE
DC(Tc=25°C) 10 7
1EDEC TO-220AB
Drain Current DC(Tc=lOO°C) 10 4 A EIA1 sc-,e
Pulse lOp 28 TOSHIBA 2-10AlB
Orain Power Dissipation 40 W
(Tc=25°C) Po
Thermal Resistance, Junction to Ambient Rth( i-a) 80 °C/W
-224-
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25 D C)

VDS=100V,VGS=OV,Tc=25 D C - - 250 ).JA
IDSS
VDS=80V ,VGS=OV,Tc=125 D C - - 1000 ).JA
Drain-Source Breakdown Voltage V{BR)DSS ID=250).JA, VGS=OV 100 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250).JA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV, ID=4A 1.5 2.9 - S
Drain-Source ON Resistance RDS(ON) ID=4A , VGS=lOV - 0.3 0.4 fl
Drain-Source ON Voltage VDS{ON) ID=7A , VGS=10V - 2.3 V
Turn-on Time ton o ..... VI~~
lOVD c:
~rVOUT
• - 110 ns
Switching Time
Fall Time tf lO).Js ~
VIN:tr,tf<5ns
r,
DD=50V
- 70 ns
Turn-off Time toff D.U:;l% {Zout=50fl; - 170 ns
Total Gate Charge
VGS=10V, ID=IOA,
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25 D C)

Diode Forward Voltage VSD IS=8A , VGS=OV, Tc=25 D C - - 2.3 V
Reverse Recovery Time trr Tj=150 D C, IF=8A, - 280 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/).Js - 1.6 - ).JC
TOSHIBA CORPORATION
-225-
TECHNICAL DATA SILICON 5 CHANNEL HOS TYPE

( ll~HOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in mrn
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 Cl3I4AX. j!!3.6±Cl2
DRIVE APPLICATIONS.
FEATURES:
Low Drain-Source ON Resistance: RDS(ON)=0.3rl (Typ.)
High Forward Transfer Admittance: IYfsl=2.9S (Typ.)
• Low Leakage Current: IGSs=±500nA(Max.) @ VGS=±20V
IDSS= 250~A(Max.) @ VDS= 60V
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS.ID=250~A

Drain-Gate Voltage (RGS=lMrl) VDGR 60 V
1. GATE
Gate-Source Voltage VGSS ±20 V 2. DRAIN (HEAT SINK)
3. SOURCE
DC(Tc=25°C) ID 7
JEDEC TO-220AB
Drain Current DC(Tc=lOO°C) ID 4 A EIAJ SC-46
Inductive Current (Clamped) hp 28 A Weiget : 1. 9g

(Tc=25°C) PD
Thermal Resistlmce, Junction to Case Rth(j-c) 3.12 °C/W
Thermal Resi~tance. Junction to Ambient RthCi-a) 80 °C/W
TOSHIBA CORPORATION
- 226-
TOSHIBA SEMICONDUCTOR YT F S 2 3
TECHNICAL DATA

Gate Leakage Current IGSS VGS=±20V. VDS=OV - - ±SOO nA

VDS= 60V. VGS=OV.Tc=2S·C - - 2S0 lJA
IDSS
VDS= 48V. VGS=OV.Tc=12S·C - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS ID=2s0lJA• VGS=OV 60 - - V
Gate Threshold Voltage Vth VDS=VGS. ID=2s0lJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV. ID=4A 1.5 2.9 - S
On-State Drain Current ID(ON) VDS=10V, VGS=lOV 7 - - A
Drain-Source ON Resistance RDS(ON) ID=4A , VGS=10V - 0.3 0.4 rI
Drain-Source ON Voltage VDS(ON) ID=7A • VGS=lOV - 2.3 V
Reverse Transfer Capacitance Crss VDS=2sV. VGS=OV. f=IMHz - 100 pF
Switching Time
Rise Time
Turn-on Time
Fall Time
tr
ton
tf
lOTI VI~l
00<->1 g
lOlJs II)
VIN:tr.tf<sns
Tour
ID=4A
.
....
VD =30V
-
-
-
70 ns
llO ns
70 ns
Turn-off Time toff D. Ul>1 % (Zout=sO rI) - 170 ns
VGS=10V, ID=lOA, - 10 nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2s·C)

Diode Forward Voltage VSD IS=7A • VGS=OV, Tc=2s·C - - 2.3 V
Reverse Recovery Time trr Tj=IS0·C. IF=8A, - 280 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/lJs - 1.6 - lJC
TOBHIBA CORPORATION
- 227-
or-MOS)

Unit in GUll
DRIVE APPLICATIONS.
FEATURES:
~
ll..d?t:r
xy II '."
~ ...'"
.~ <
..,
.
High Forward Transfer Admittance: !Yfs!=5.5S (Typ.) <
..,'"
Cl '..."
Low Leakage Current: IGSS=±50QnA(Max.) @ VGS=±20V
IDSS= 25OUA(Max.) @ VDS=100V r-t; )
...z
• Enhancement-Mode L6l/AX. !i, 1
..,...'"
a.76 i
i 0
Ii
Drain-Gate Voltage (RGS.1Mn) VDGR 100 V 1. GATE
Gate-Source Voltage VGSS ±20 V 2. DRAIS (HEAT SINK)
3. SOURCE'
DC(Tc=25°C) In 14
J!:DEC To-aOAB
DraIn Current DC(Tc=100°C) ID 9 A EIAJ
Pulse IDP 56 TOSHI3A 2-10A3B
(Tc=25°C) Po 75 W
The information contained herein is presented only as a guide tor the applications of our
rights of the third parties which may result from its use. No license IS granted by ImplicatIOn TOBHIBA CORPORATION
-228-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYHBOL TEST CONDITION MIN.TYP. MAX. UNIT
VDS=lOOV, VGS=OV, Tc=25·C - - 250 lJA
VDS=SOV ,VGS=OV,Tc=125·C - - 1000 lJA
Forward Transfer Admittance IYfsl VDS=10V, ID=SA 4.0 5.5 - S
On-State Drain Current ID(O~) VDS=10V, VGS=10V 14 - - A
Drain-Source ON Resistence RD?(O~) ID=SA , VGS=lOV - 0.14 O.lS fl
Drain-Source ON Voltage VDS(O~) ID=14A , VGS=lOV - 2.2 V
Input Capacitance Ciss - SOO pF
Switching Time
Turn-on Time
Fall Time
ton
lOlJs _
11
l~V-D- VI~~I ~rVOUT - 105 ns
tf -:t
- 45 ns
VI~:tr,tf<5ns VDD=36V
Turn-off Time toff D.U:Ol% (Zout=15fl) - S5 ns
Total Gate Charge IS
VGS=10V, ID=lSA, - 30 nC
Gate Source Charge QgS VDS=SOV - 9 - nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25·C)

Diode Forward Voltage VSD IS=14A, VGS=OV, Tc=25·C - - 2.5 V
Reverse Recovery Time trr Tj=150·C, IF= 14A, - 360 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/lJs - 2.1 - lJC
TOSHIBA CORPORATION
-229-
( 1l'-MOS)

Unit in cun
DRIVE APPLICATIONS. -
FEATURES: lLLiY"'r
XV ~ '"1[
to-
."
..
<
.
Low Drain-Source ON Resistance: RDS(ON)-0.14Q (Typ.) ..,'"
,;
High Forward Transfer Admittance: IYfsl=5.5S (Typ.) < .t1
0''"
~
Low Leakage Current IGSS=±50OnA(Max.) @ VGS=±20V e1

I)
IDSS= 250~A(Max.) @ VDS=60V z·
,
• Enhancement-Mode Vth=2.~.OV @ VDS=VGS,ID=250~A L5MAji: i ,
~
'"
0
e1
Ii ,,
~
Q.7e
,i
'I'
Drain-Gate Voltage (RGS=lMn) VDGR 60 V I. GATE
Gate-Source Voltage VGSS ±20 V 2. DRAU (HEAT SINK)
3. SOURCE
DC(Tc=25°C) ID 14
J'EDEC TO-Z20AB
EIAJ'
Drain ~ower Dissipatioq
(Tc=25°C) PD 75 W
Storage Temperature Range Tstg -55'\,150 °C
CHARACTERISTIC SYMIlOL l1.U. UNIT
Thermal ReSistance, Junction to Ambient Rth(i-a) 80 °C/W
TOSHISA CORPORATION
-230-
SEMICONDUCTOR YT F 5 3 1
TOSHIBA
TECHNICAL DATA


VDS=60V ,VGS=OV,Tc=25°C - - 250 IJA
IDSS
VDS=4BV ,VGS=OV,Tc=125°C - - 1000 IJA
Drain-Source Breakdown Voltage V(BR)DSS ID=250IJA, VGS=OV 60 - - V
Gate Threshold Voltage Vth VOS=VGS, ID=2501JA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=10V, ID=BA 4.0 5.5 - S
On-State Drain Current IO(ON) VDS=lOV, VGS=lOV 14 - - A
Drain-Source ON Resistance RDS(ON) IO=BA , VGS=lOV -
0.14 O.lB n
Drain-Source ON Voltage VDS(ON) IO=14A , VGS=lOV - 2.2 V
Switching Time
Turn-on Time ton o ...... VI~i
10VJl
c:
~l
•
OVOUT - 105 ns
Fall Time tf 101Js:::l
V1N:tr,tf<5ns
-<t
VDD=36V
- 45 ns
Turn-off Time toff D. U:!!I% (Zout= l5r1) - B5 ns
Total Gate Charge
VGS=10V, ID=lBA, - 18 30 nC
Gate-Drain ("Miller") Charge Qgd - 9 - ne

CHARACTERISTIC SYNBOL TEST CONDITION MIN. TYP. NAX. UNIT
Diode Forward Voltage VSD 1S=14A, VGS=OV, Tc=25°C - - 2.5 V
Reverse Recovery Time trr Tj=150°C, IF= 14A, - 360 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA!lJs - 2.1 - ].)C
TOSHIBA CORPORATION
- 231-
TECHNICAL DATA SILICON H CHANNEL MOS TYPE
(?l'-MOS)

Unit in mrn
J
1 Q.3MAX. ¢3.6±Q.2
DRIVE APPLICATIONS.
FEATURES:
P*[Ul~ ~
High Forward Transfer Admittance: IYfsl=5.5S (Typ.) .-<
Low Leakage Current: IGSs=±500nA(Max.) @VGS=±20V

IDSS= 250~A(Max.) @ VDS=lOOV ri. :z;
H
• Enhancement-Mode : Vt h=2.Cl'\4.0V @ VDS=VGS,ID=250~A 1.6MAX. :E
II
0
~. '"
.-<
I
1. GATE
12 3. SOURCE
DC(Tc=25°C) ID
JEDEC TO-220AB
Drain Current DC(Tc=100·C) iD 8 A EIAJ SC-46
Pulse IDP 48 TOSHIBA 2-10A!3B
Inductive Current (Clamped) Itp 48 A Weiget : 1.9g
(Tc=25°C) PD W
Thermal Resistance, Junction to Ambient Rth(;-a) 80 °C/W
Muximum Lead 'Temperature for Soldering 300
TOSHIBA CORPORATION
-232-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST COt\DITION MIN. TYP. MAX. UNIT
Gate Leakage Current lGSS VGS=±20V, VDS=OV - - ±500 nA
VDS=100V,VGS=OV,Tc=25°C - - 250 uA
IDSS
VDS= 80V,VGS=OV,Tc=125°C - - 1000 UA
Forward Transfer Admittance l¥fsl VDS=lOV, ID=8A 4.0 5.5 - S
On-State Drain Current ID(ON) VDS=lO\', VGS=lOV 12 - - A
Drain-Source ON Resist~nce RDS(ON) ID= 8A , VGS=lOV - 0.2 0.25 II
Output Capaci tance Coss - 500 pF
Switching Time
Rise Time
Turn-on Time
Fall Time
tr
ton
tf
l~V-D- VI~:;;I
10us.....
VIN:tr,tf<5ns
'i ~rVOUT
I D-8A
-:
VDD=36V
-
-
-
75
105
45
ns
ns
ns
Turn-off Time toff D.U~l% (Zout=lSIl) - 85 ns
Total Gate Charge
VGS=lOV, ID=18A,
- 18 30 nC
Gate Source Charge QgS VDS=80A - 9 - nC

Diode Forward Voltage VSD IS= 12A , VGS=OV, Tc=~5°C - - 2.3 V
Reverse RecoverY,Time trr Tj=150°C, IF=14A, - 360 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/us - 2.1 - uC
TOSHISA CORPORATION
-233-
( 1Z'-MOS)

Unit in nun
DRIVE APPLICATIONS. I Q.3MAX. 1I'3.6±Q.2
~
FEATURES: ~j ~~ !~~<- ><
Lo'" Drain-Source ON Resistance : RDS(ON)=0.2n (Typ.)
High Forward Transfer Admittance : IYfsl=5.5S (Typ. )
.
~
'" '"~
'" ~
Low Leakage Current : IGSs=±500nA(Max.) @ VGS=±20V '"

t1
IDSS= 250~A(Max.) @ VDS= 60V

• Enhancement-Mode : Vt h=2.0-4.0V @ VDS=VGS,ID=250~A
r--; . ..
....
::0
1.6MAX.
.Q.Z.§... 'j-
II 0
t1
,..,
I
MAXHIUM RATINGS (Ta=25°C) 2.54 2.54 ~
::0
<-
CHARACTERISTIC I~
"'~ti-;j+~~
SYMBOL RATING UNIT .!..
~
'" d . oJ
1. GATE
3. SOURCE
DC(Tc=25°C) ID 12
JEDEC TO-220AB
Drain Current DC( Tc=l OO°C) ID 8 A
EIAJ SO-46
Inductive Current (Clamped) hp 48 A Wei get : 1.9g
(Tc=25°C) PD 75 W
Storage Temperature Range Tst~ -55"-150 °C
TOSHIBA CORPORATION
-234-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UIUT
Gate Leakage Current IGSS VGS=±20V. VDS=OV - - ±SOO nA
VDS= 60V,VGS=DV,Tc=2S"C - - 2S0 IJA
VDS= 48V,VGS=OV,Tc=12S"C - - 1000 IJA
Drain-Source BreakdOlm Voltage V(BR)DSS ID=2S0IJA, VGS=OV 60 - - V
Forward Transfer Admittance IYfsl VDS=lOV, ID=8A 4.0 S.5 - S
Drain-Source ON Resistance RDS(ON) ID= 8A , VGS=lOV - 0.20 0.25 fl
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=lMHz - ISO pF
Switching Time
lOVn C;
~rVOUT
•
- 105 ns
Fall Time tf, lOlls ~ ..;:t - 45 ns
Turn-off Time toft D. U~l% (Zout= lSflj - 85 ns
Total Gate Charge
VGS=lOV, ID= l8A, - 18 30 nC
Gate Source Charge QIl.S VDS=48V - 9 - nC
Gate-Drain ("Miller") Charge QRd - 9 - nC

Diode Forward Voltage VSD IS= 12A , VGS=OV, Tc=2S"C - - 2.3 V
Rev.erse Recovery Time trr Tj=150"C, IF=14A, - 360 - ns
Reverse Recovered Charge Qrr dIF/dt=100A!lJs - 2.1 - IJC
TOSHIBA CDRPDRATION
-235-
TOSHIBA SEMICONDUCTOR YTFS40
(1C-HOS)

Unit in mm
lQ.JIIAX. j3:l.6 ±Q. 2
DRIVE APPLICATIONS.
~i I
FEATURES: l1~c
XV
13g,.. ~
Low Drain-Source ON Resistance: RDS(ON)=0.07Q (Typ.) .~
<
,< ..,
:0;
High Forward Transfer Admittance : iYfsi=lOS (Typ.) <

'"
<l '"
~
Low Leakage Current : IGSs=±SOOnA(Max.) @ VGS=±20V :1
J
~.
~I
IDSS= 250uA(Max.) @ VDS=100V z
~
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS.ID=250UA '"

0
Q.7e Ii ...:1
MAXIMUM RATINGS (Ta=2S·C) 2.54- 2.54-

,.
<
CHARACTERISTIC
SYMBOL
VDSX
RATING
100
UNIT
V
~L1f1. .MJ
N
.
t']
...
I
.Ill
d ".
-1~2-3-
to
oJ
...
t
Drain-Gate Voltage (RGS=lMn) VDGR 100 V 1. GATE
Gate-Source Voltage VGSS ±20 V 2. DULY (HEAT SINK)

3. SOURCE
DC(Tc=2S"C) ID' 27
JEDEC TO-220AB
Drain Current DC(Tc=lOO·C) ID 17 A EIAJ SC-4.6
(Tc=25·C) PD 125 W
Storage Temperature Range Tst2 -55"'150 ·C
CHARACTERISTIC SYMBOL M..o\X. - UNIT
Thermal Resist,mce. Junction to Case Rth(j-c) 1.0 ·C/W
Thermal Resistance. Junction to Ambient Rth(j-a) 80 ·C/W
-236-
TOSHIBA
TECHNICAL DATA

VOS=lOOV, VGS=OV, Tc=25°C - - 250 IlA
lOSS
VOS=80V ,VGS=OV,Tc=125°C - - 1000 IlA
Drain-Source Breakdown Voltage V(BR)DSS ID=2501lA, VGS=OV 100 - - V
Gate Threshold Voltage Vth VOS=VGS, ID=25OIlA 2.0 - 4.0 V
On-State Drain Current ID(ON) VDS=10V, VCS=10V 27 - - A
Drain-Source ON Resistance RDS(ON) ID=15A , VGS=lOV - 0.07 0.085 n
Reverse Transfer Capacitance Crss VDS=25V, VGS.=OV, f=lMHz - 300 pF
Turn-on Time lOV]1 VIT~VOUT - ns
Switching Time
ton 0..... g N
90
Fall Time tf 101ls..;t . - 30 ns
Turn-off Time toff O.U:ol% (Zout=4.7..11) - llO ns
Total Gate Charge
VGS=10V, ID=34A.

CHARACTERISTIC SYMBOL TEST CONDITIO~ MIN. TYP. NAX. UNIT
Oiode Forward Voltage VSD IS= 27A , VGS=OV, Tc=25°C - - 2.5 V
Reverse Recovery Time trr Tj=150°C, IF= 27A, - 500 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/lls - 2.9 - ]JC
TOSHIBA CORPORATION
-237-

(1Z' -HOS)

Unit in CUD
DRIVE APPLICATIONS. 1a.3!MX. ;:l:l.S:!:1l2
~
FEATURES: !J.LK ;b
XV "r-
.~
~
<
'"'"
,.;
.
,i
<
High Forward Transfer Admittance : IYfsl=lOS (Typ. ) ~
Low Leakage Current : IGSS=±50QnA(Max.) @ VGS=±20V
0'"
'"
f
IDSS= 25OUA(Max.) @ VDS=60V I) ..;
Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250UA L6MAX. "
,! ~
..,"
Q
I ...
~J_ i
2.54-
,.;
MAXIMUM RATINGS (Ta=25·C) 2.11'
~
CHARACTERISTIC
SYMBOL
VDSX
RATING
60
UNIT
V
10:f:
~
t1
..
I
an
d
-1
...
ft4J:
'
~2-3-
to
N
,
..
Drain-Gate Volt~ge (RGS=IMn) VDGR 60 V 1. GATE

Gate-Source Voltage +20 V 2. DRAIN (HEAT SINK)
VGSS
3. SOURCE'
DC(Tc=25~C) 10 27
JEDEC TO-220AB
Orain Current DC(Tc=100·C) 10 17 A EIAJ SC-4.8
Pulse lOp 108 TOSHIBA 2-1.0A31l
(Tc=2S·C) PD 125 W
Storage Temperature Range Tstllt -55'\.150 ·C
Thermal Resistance, Junction to Case Rth(j-c) 1.0 ·C!W
Thermal Resistance, Junction to Ambient Rth(;· a) 80 ·C!W
TOSHIBA CORPORATION
-238-
TOSHIBA
TECHNICAL DATA

VDS=60V ,VGS=OV,Tc=25°C - - 250 uA
VDS=48V ,VGS=OV,Tc=125°C - - 1000 UA
Drain-Source Breakdown Voltage V(BR)OSS IO=250UA, VGS=OV 60 - - V
Gate Threshold Voltage Vth VOS=VGS, IO=250uA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VOS=IOV, IO=15A 6 10 - S
On-State Orain Current IO(ON) VOS=IOV, VGS=10V 27 - - A
Orain-Source ON Resistance ROS(ON) IO=15A , VGS=IOV - 0.07 0.085 n
Orain-Source ON Voltage VOS(ON) ID=27A , VGS=IOV - 2.1 V
Reverse Transfer Capacitance Crss VOS=25V, VGS=OV, f=INHz - 300 pF
Switching Time
Rise Time
Turn-on Time
Fall Time
tr
ton
tf
l~V-D VI~~I
lOus -<i
Ii
I O=15A
~f OVOUT
-
-
-
60
90
30
ns
ns
ns
VIN:tr,tf<5ns VOO=30V
Turn-off Time toff 0.l':ii1% (Zout=4.7r1) - 110 ns
Total Gate Charge
VGS=IOV, IO=34A. - 38 60 nC
Gate-Orain ("Miller") Charge Qgd - 21 - nC
SOURCE-ORAIN OIOOE RATINGS ANO CHARACTERISTICS (Ta=25°C)

CHARACTERISTIC SYMBOL TEST CONOITION NIN. TYP. HAX. UNIT
Oiode Forward Voltage VSO IS=27A , VGS=OV, Tc=25°C - - 2.5 V
Reverse Recovery Time trr Tj=150°C, IF=27A. - 500 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/us - 2.9 - I"C
TOSHISA CORPORATION
-239-
(1C .... MOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in nun
CHOPPER REGULATOR, DC-DC CONVERTER AND HOTOR
](l,314AX. .¢3.6±o.~
DRIVE APPLICATIONS.
FEATURES: ~~ ~[!~~h ~
Low Drain-Source ON Resistance : RDS(ON)=0.09~ (Typ.)
High Forward Transfer Admittance : !Yfs!=lOS (Typ.)
Low Leakage Current : IGSS=±500nA(Max.) @ VGS=±20V
Inss= 250IJA(Max.) @ Vns=lOOV
~
O>
t'l
~. .J
~
:z;
I e-
H
• Enhancement-Mode : Vt h=2.0-4.0V @ VDS=VGS,In=250IJA
II
:Ii
1.6 MAX. 0
...t'l
~
I
MAXIMUM RATINGS (Ta=25°C) 2.b4 2.54 ~
...
:Ii
CHARACTERISTIC
SYMBOL
VDSX
RATING
100
UNIT
V
~~'
.
...
. !i:F-' '1 - 2 - 3'
Drain-Gate Voltage (RGS=I~) VDGR 100 V

1. GATE
3. SOURCE
DC(Tc=~5°C) ID 24
JEDEC TO-220AB
Drain Current DC(Tc=lOO°C) ID 15 A EIAJ SO-46
Inductive Current (Clamped) ILP 96 A Weiget : 1.9g

(Tc=25°C) PD
Storage Temperature Range Tstg -55'V150 °C
CHARACTERISTIC SYMBOL M.4X. UNIT
Muximum Lead Temperature for Soldering 300 DC
TOBHIBA CORPORATION
-240-
TOSHIBA
TECHNICAL DATA


VDS=100V,VGS=OV,Tc=25"C - - 250 \.I A
IDSS
VDS= 80V,VGS=OV,Tc=125"C - - 1000 \.IA
Drain-Source Breakdo.n Voltage V(BR)DSS ID=250\.lA, VGS=OV 100 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250\.lA 2.0 - 4.0 V
Drain-Source ON Resist~nce RDS(ON) ID=15A, VGS=10V - 0.09 0.11 11
Output Capacitance
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
Coss
tr
ton
tf
toff
lOVn
0...... V~l t r i N
lO\.Is -i
VIN:tr,tf<5ns
;r
I D=15A
.
VOUT
VDD= 30V
-
-
-
-
-
800 pF
60 ns
90 ns
30 ns
110 ns
D. U::.} % (Zout=4. 711 i
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg VGS=lOV, ID=34A, - 38 60 nC
Gate Source Charge Q",s VDS= 80V - 17 - nC

Diode Forward Voltage VSD IS= 24A , VGS=OV, Tc=25"C - - 2.5 V
Reverse Recovery Time trr Tj=150·C, IF=27A - 500 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/\.IS - 2.9 - \.IC
TOBHIBA CORPORATION
-241-
( 1Z'-MOS)
1 o..3I4AX. $2I3.6±o.2
DRIVE APPLICATIONS.
~
FEATURES: ~~ ~[ :~><
'" ...~ ><
~
· Low Drain-Source ON Resistance: RDS(ON)=0.09n (Typ.)
g '" to
oil
~igh Forward Transfer Admittance : IYfsl=lOS (Typ.)
· '"
.-;
Low Leakage Current : IGSS=±500nA(Max.) @ VGS=±20V '"

IDSS= 25OUA(Max.) @ VDS= 60V .--I .J
...:>!
:z.
• Enhancement-Mode : Vt h=2.()'\.4.0V @ VDS=VGS.ID=250]JA
II
1.6MAX. 0
~. '"
.-;
I
MAXIMUH RATINGS (Ta=25°C) 2.04 2.54 ~
:>!
...
CHARACTERI.STIC SYMBOL RATING UNIT '"to "' . '" I~
.. l~~
d
.-l
Drain-Source Voltage VDSX 60 V -I - 2 - 3-
Drain-Gate Voltage (RGS=lHn) VDGR 60 V

L GATE
3. SOURCE
DC(Tc=25°C) ID 24
JEDEC TO-220AB
Dr'ain Power Dissipation 125 W
(Tc=25°C) PD
THERHAL CHARACTERISTICS
products. No responsibility is assumed by TOSHIBA for any infringements of patents Dr other
TOSHIBA CORPORATION
-242-
TOSHIBA
TECHNICAL DATA


VDS=60V ,VGS=OV,Tc=2SoC - - 2S0 lJA
IDSS
VDS=48V ,VGS=OV, Tc=12SoC - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0lJA, VGS=OV 60 - - V
Forward Transfer Admittance IYfs! VDS=10V, ID=lSA 6 10 - S
Drain-Source ON Resistance RDS(ON) ID=15A, VGS=lOV - 0.09 0.11 rI
Turn-on Time ton lOVn VIyrfVOUT - 90 ns
Switching Time 01<->1 g N
Fall Time tf lOlJs .,;
- 30 ns
Turn-off Time toff D.U:>l% (Zout=4.7Q; - 110 ns
VGS=10V, ID=34A,
- nC

Diode Forward Voltage VSD IS= 24A , VGS=OV, Tc=2SoC - - 2.5 V
Reverse Recovered Charge Qrr dIF!dt=100A!lJS - 2.9 - lJC
TOSHIBA CORPORATION
-243-
TECHNICAL DATA SILICON N CHANNEL_MOS TYPE
<7r-MOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 Cl.3I4AX. ¢3.6±Cl.2
DRIVE APPLICATIONS.
~.f-L~. ,.~=~:
;-,I [i~~=~-I-~ ~
FEATURES:
Lo" Drain-Source ON Resistance: RDS(mn=1.0n (Typ.)
High For"ard Transfer Admittance: IYfsl=I.3S (Typ.)
Low Leakage Current: IGSS=±SOOnA(Max.) @ VGS=±20V
IDSS= 2S0~A(Max.) @ VDS=200V
Enhancement-~Iode : Vt h=2.()'\.4.0V @ VDS=VGS,ID=250~A
f--!. II)
""'L::;6:..:MA=X......--IlII-1
~
..
MAXHIUN RATINGS (Ta=2S0C) 2.54 2.54 ~
CHARACTERISTIC SYNBOL RATING UNIT N 10 tD) ~

::'l d ...... ~
Drain-Source Voltage VDSX 200 V -1-2-3-~

1. GATE
:;, SOURCE
DC(Tc=25°C) ID 2.5
JEDEC TO-220AB
Drain Current DC(Tc=lOO°C) ID 1.5 A
Inductive Current (Clamped) hp 10 A Weiget : 1.9g
(Tc=25°C) PD
Storage Temperature Range TstlZ -55"'150 °C
Thermal Resistance, Junction to Case Rth(j-c) 6.4 °CN

Thermal Resistance, Junction to Ambient Rth(j-a) 80 °CN
products: No responsibility is assumed by TOSHIBA for any infringements of patents or other
-244-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SnmOL TEST Cm-WI nON NI1". TYP. NAX. llNIT
Gate Leakage Current IGSS VGS=±20V, VDS~OV - - ±500 nA
IDSS
VDS=160V,VGS=OV,Tc=125°C - - 1000 ].1';
Drain-Source BreakdOl,on Va] tage V(BR)DSS ID=250].1A, VGS=OV 200 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250].1A 2.0 - 4.0 \'
Forward Transfer Admittance IYfs I VDS=lOV, ID=1.25A 0.8 1.3 - S
On-State Drain Current ID(ON) VDS=lOV, VGS=lOV 2.5 0- - A
Drain-Source ON Resist<:nce RDS(ON) ID=I.25A, VGS=lOV - 1.0 1.5 n
Drain-Source ON Voltage VDS(ON) ID=2.5A, VGS=lOV - 2.7 V
-
Switching Time
Rise Time
Turn-on Time
tr
ton IOVJ1 VI1i1~r~\our
0..... g 00
-
25
40
ns
ns
Fall Time tf 10].1s Lr)
VIN: tr, tf<5ns VDD=100V
- 15 ns
Turn-off Time toff D.U::;l% (Zout=50S1) - 30 ns
Total Gate Charge
(Gate-Source Plus Gate-Drain) Qg - 5 7.5 nC
VGS=lOV, ID=3A.
Gate-Drain ("Miller") Charge <lgd - 3 - nC
SOU~CE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)

Continuous Source Current IS - - - 2.5 A
Diode Forward Voltage VSD IS=2.5A, VGS=OV, Tc=~5°C - - 2.0 V
Reverse Recovery Time trr Tj=150oC, IF=2.5A, - 290 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/].Js - 2.0 - ].1C
TOSHIBA CORPORATION
-245-
( 1l-MOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in rom
1 Cl3I4AX. jZl3.6±Cl2
DRIVE APPLICATIONS.
~
FEATURES: Jj ~[ !~~... ..
;i
LOI, Drain-Source ON Resistance: RDS(ON)=1.0n (Typ.)
~
'" '"....otl
High Forward Transfer Admittance: IYfs I=1.3S (Typ.)
Low Leakage Current : IGSS=±SOOnA(Max.) @ VGS=±20V
.,
::E
t'<
IDSS= 2S0uA(Max.) @ VDS=lSOV )

r--t .
'"::E
II
H
• Enhancement-~Iode : Vt h=2.(Y\.4.0V @ VDS=VGS,ID=2S0UA 1.6MAX.
.,....
0
~.
I
MAXHIUN RATINGS (Ta=25°C) 2.54 2.54 ~
...::E
CHARACTERISTIC SYNBOL RATING UNIT L1~ ~I~
-1-2-~
"l d ,.j,.' oJ
Drain-Gate Voltllge (RGS=H1f2)
VDSX
VDGR
150
150
V
V
.....
,
1. GATE
3. SOURCE
DC(Tc=25°C) ID 2.5
JEDEC TO-220AB
Drain Current DC(Tc=100°C) ID 1.5 A EIAJ SC-46
Pulse IDP 10 TOSHIBA 2-10A:lB
(Tc=2S0C) PD W
CHARACTERISTIC SYNBOL M~X. UNIT
Thermal Resi stance, Junctlon to Case Rth(j-c) 6.4 °C/I,
Thermal Resistance, JuncUon to Ambient Rth(j-a) 80 °eN
Purposes (] .6mm from case for ]0 seconds) TL °C
-246-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SnlBOL TEST C01\DITlON NIl\. TYP. MAX. liN IT
Gate Leakage Current IGSS VGS=±20V, VDS=OV - - ±500 nP.
VDS=120V, VGS=O\', Tc=125°C - - 1000 IJA
Drain-Source BreakdOl,n Vol tage V(BR)DSS ID=2501JA, VGS=OV 150 - - \'
Forward Transfer Admittance IYfsl VDS=lOV, ID=1.25A 0.8 1.3 - S
On-State Drain Current ID(ON) VDS=lOV, VGS=lOV 2.5 - - A
Drain-Source ON Resistance RDS(ON) ID=I.25A, VGS=lOV - 1.0 1.5 r?
Rise Time tr I D=I.25A - 25 ns
Turn-on Time ton lOVJl VIli1 glOVOUT - 40 ns
Switching Time 0...... g -0
Fall Time tf 10IJs Il) - 15 ns
Turn-off Time toff D.U~l% (Zout=50n) - 30 ns
Total Gate Charge 5 7.5
VGS=lOV, ID=3A,

Diode Forward Voltage VSD IS=2.5A, VGS=OV, Tc=~5"C - - 2.0 V
Reverse Recovery Time trr Tj=150°C, IF=2.5A. - 290 - ns
Reverse Recovered Charge Qrr dIF!dt=lOOA!lJs - 2.0 - IJC
TOSHIBA CORPORATION
-247-
SILICON ~ CHANNEL MOS TYPE
TECHNICAL DATA
(1r-MOS)
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR ) U3MAX. ,¢3.6±U2
DRIVE APPLICATIONS.
~:f ~[ ~~...
d
FEATURES: ><
LOI' Drain-Source 0:\ Resistance: RDS{O:,)= 1.5rl (Typ.)
High Forward Transfer Admittance: IYfs 1= 1.3S (Typ. )
..
~
'" '"~OIl
~
Low Leakage Current : IGSS=±500nA{Hax.) @ VGS=±20V

'"t'l
IDSS= 250~A(Hax.) @ VDS=200V r--1. .J
'"::;....
II
Enhancement-~lode : Vth =2.(}'\..4.0V @ VDS=VGS,ID=250~A 1.6 MAX. c
t'l
.-<
~.
I
~
...
HAXHWN RATINGS (Ta=25°C) 2.b4 2.54 ::;
l'
I..:!
CHARACTERJ STIC SYHBOL RATING UNIT
"'~
. t').... -2-3·~~
t') d . . C'tl
Drain-Source Voltage VDSX 200 V .-<
Drain-Gate Vol tf~ge (RGS=lWn VDGR 200 V

1. GATE
3. SOURCE
DC(Tc=25°C) ID 2
JEDEC TO-220AB
Drain Current DC(Tc=100°C) ID 1.25 A EIAJ SC-46
Pulse IDP 8 TOSHIBA 2-)OA3B
Drain PO"'er Dissipation 20 \\'
(Tc=25°C) PD
CHARACTERISTIC SYHI\OL MAX. UNIT
Thermol ResisL,nce, Junction to Case Rth( j-c) 6.4 °C/I'"
Thermal Resistance, Junction to Ambient Rth(j-a) 80 °C!I';
products. No responsiliility is assumed by TOSHIBA for any infringements of patents or other
TOSHISA CORPORATION
-248-
TOSHIBA
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Tn=25 D C)

CHARACTERISTIC 5mBOL TEST CONDITION mN. TYP. ~lAX. UNIT

VDS=200V,VGS=OV,Tc=25 D C - - 250 \.JA
IDSS
VDS=160V,VGS=OV,Tc=l25°C - - 1000 IJA
Drain-Source Breakdown Voltage V(BR)DSS ID=250\.JA, VGS=O\' 200 - - \'
Gate Threshold Voltage Vth VDS=VGS, ID=250\.JA 2.0 - 4.0 V
Forward Transfer Admittance l¥fsl VDS=lOV, ID=1.2SA 0.8 1.3 - S
On-State Drain Current IDCON) VDS=lOV, VGS=lOV 2 - - A
Drain-Source ON Resistence RDS(ON) ID=l.25A, VGS=lOV - 1.5 2.4 fl
Switching Time
Rise Time
Turn-on Time
Fall Time
tr
ton
t-f
lOVn Vllr'rir~our
0..... g
10\.Js IJ"\
ClO
-
-
-
25
40
15
ns
ns
ns
VIN:tr,tf<5ns VDD=lOOV
Turn-off Time toff D.U,;l% (Zout=50fl) - 30 n(;
Total Gate Charge
VGS=lOV, ID=3A, - 5 7.5 nC
Gate Source Charge ggs VDS=160V - 2 - nC

CHARACTERISTIC SYMBOL TEST CONDITION BIN. TYP. ~lAX. UNIT
Reverse Recovery Time trr Tj=l50°C, IF=2·5A. - 290 - ns
Reverse Recovered'Charge Qrr dIF/dt=lOOA/\.ls - 2.0 - \.JC
TOSHISA CORPORATION
-249-
Of-MOS)
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR lo.:.II4AX. ¢3.6±o.~
DRIVE APPLICATIONS.
FEATURES:
LOI,- Drain-Source ON Resistance: RDS(ON)=1.5n (Typ.)
High Forward Transfer Admittance : IYfs 1= 1.3S (Typ.) i
~~
~r!~~'" "::i to
...'"
ct -
Low Leakage Current : IGSS=±50OnA(Max.) @ VGS=±20V "t1

I-
IDSS= 25~A(Max.) @ VDS=150V t--- _
lz:
H
II
:I
• Enhancement-Mode : Vt h=2.(YI.4.0V @ VDS=VGS,ID=250\.lA 1.614AX. 0
t1
I
.-<
~.
NAXHlml RATINGS (Ta=25°C) 2.54 2.54 ~

:I
CHARACTERISTIC
SYMBOL
VDSX
RATING
150
UNIT
V
'1l1:f
::l d . . . oj..
'1-2-;r
>-
~I~
f
Drain-Gate VoltBge (RGS=lMn) VDGR 150 V
1. GATE
Gate-Source Voltage VGSS +20 V 2. DRAIN (HEAT SINK)
3. SOURCE
DC(Tc=25°C) 11) 2
JEDEC TO-220AB
Drain Current DC(Tc=100°C) ID 1.25 A EIAJ SO-46
Inductive Current (Clamped) 1·~ .- 8 A Weiget : 1.9g

(Tc-25°C) PD
Thermal Resi st,.nce, Junction to Case Rth{j-c) 6.4 °C/I-.'
Thermal Resistance, Junction to Ambient Rth(;-a) 80 °C/I,
Purposes (] .6mm from case for ]0 seconds) TL
TOSHISA CORPORATION
-250-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SHlBOL TEST CONOITION HlN. TYP. ~lAX. UNIT
Gate Leakage Current IGSS VGS=±20V, VOS-OV - - ±sOO nft.

VOS=ls0V ,VGSzOV, TC 2soC
E - - 250 \.IA
lOSS
VOS=120V ,VGS=O\', Tc=125°C - - 1000 \.IA
Drain-Source Breakdown Voltage V(BR)OSS IO=250lJA, VGS=O\' 150 - - V
Gate Threshold Voltage Vth VOS=VGS, IO=2s0lJA 2.0 - 4.0 V
Forward Transfer Ad~ittance IYfsl VOS=lOV, IO=1.2sA 0.8 1.3 - S
On-State Orain Current IO(ON) VOS=lOV, VGS=lOV 2 - - A
Orain-Source ON Resist~nce ROS(ON) IO=I.25A, VGS=10V - 1.5 2.4 Q
Orain-Source ON Voltage VOS(ON) IO=2A , VGS=lOV - 3.3 V

Input Capacitance Ciss "- ISO pF
Reverse Transfer Capacitance Crss VOS=2sV, VGS=OV, f=lMHz - 25 pF
Rise Time tr I O-l.25A - 25 ns
Turn-on Time ton . I~VD VIyITVOUT - 40 ns
Switching Time
Fall Time tf lOlJs - 15 ns
VIN:tr,tf<sns VOO=7sV
Turn-off Time toff O.U:;;l% (Zout=sOm - 30 ns
Total Gate Charge
(Gate-Source Plus Gate-Orain) Qg - 5 7.5 nC
VGS=10V, IO=3A.
Gate-Orain ("Miller") Charge Qgd - 3 - nC
SOURCE-DRAIN OIODE RATINGS ANO CHARACTERISTICS (Ta-2s0C)

Diode Forward Voltage VSD IS= 2A , VGS=OV, Tc=2soC - - 1.8 V
Reverse Recovery Time trr Tj=lsO°C, IF=2.sA, - 290 -
-
ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/\.Is - 2.0 - lJC
TOSHIBA CORPORATION
- 251-
(7! -HOS)

Unit in nun
DRIVE APPLICATIONS. lo.3l1AX. f/!3.6±o.:o
FEATURES:
LO\,' Drain-Source ON Resistance: RDS(ON)=0.5r1 (Typ.)
High Forward Transfer Admittance: IYfsl=2.5S (Typ.)
Low Leakage Current: IGSs=±500nA(Max.) @ VGS=±20V
IDSS= 250\.1 A(Max .) @ VDS=200V
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=250\.lA '"
H
:s
~.
f----..J.
~ I
Drain-Source Voltage VDSX 200 v
1. GATE
DC(Tc=25"C) Ii:> 5 3. SOURCE
JEDEC TO-220AB
Drain Current DC(Tc=lOO"C) ID 3 A
~~----~~~-+--~~
(Tc=25"C) 40 w
Channel Temperature 150 "C
Storage Temperature Range -55'1,,150 "C
Thermol Resistance, Junction to Case Rth(j-c) 3.12 "C/h'
Thermal Resistance, JuncUon to Ambient Rth(;-a) 80 "CN
Muximum Lead Temperature for Soldering 300 aC
-252-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SHIBOL TEST CO~DITION m1\. TYP. NAX. UNIT

VDS=200V,VGS=OV,Tc=25"C - - 250 wA
IDSS
VDS=160V,VGS=OV,Tc=12S"C - - 1000 lJ:\
Drain-Source Breakdown Voltage V(BR)DSS ID=250WA, VGS=OV 200 - - V
Forward Transfer Adnittance IYfsl VDS=lOV, ID=2.5A 1.3 2.5 - S
On-State Drain Current ID(ON) VDS=IOV, VGS=IOV 5 - - A
Drain-Source ON Resist<::nce RDS(ON) ID=2.5A, VGS=10V - 0.5 0.8 0
Drain-Source ON Voltage VDS(ON) ID=5A , VGS=lOV - 2.7 \'
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=!MHz - 80 pF
Hi se Time tr I D=2.5A - 60 ns
Turn-on Time ton lOVn V I T i gIOVOUT
0..... § -:t
- 100 ns
Switching Time
Fall Time tf lOlJs '" - 60 ns
Turn-off Time toff D.U~I% (Zout= 500) - 160 ns
Total Gate Charge
VGS=IOV, ID= 6A, - 11 15 nC

Diode Forward Voltage VSD IS= SA , VGS=OV, Tc=~5"C - - 2.0 V
Reverse Recovery Time trr Tj=150"C, IF=5A. - 350 - ns
TOSHIBA CORPORATION
-253 -
( 7l-MOS)

Unit in nun
1 U3MAX. ~3.6±U2
DRIVE APPLICATIONS.
~
FEATURES: ~*[ !~~ <- ..
~
LOl< Drain-Source ON Resistance : RDS(ON)=0.5fl (Typ.)
~
'" to
ot:l
High Forward Transfer Admittance: IYfsl=2.5S (Typ. ) :Ii ....
"" I-
IDSS= 250~A(Max.) @ VDS=150V f---4111 .J z
II
H
Enhancement-Node : Vt h=2.(}'\.4.0V @ VDS=VGS,ID=250~A 1.6 MAX. :Ii
0
""
....
.Q2.§.. ,
I
MAXHlUN RATINGS (Ta=25 DC) 2.04 2.54 ~
:Ii
CHARACTERISTIC
SYNBOL
VDSX
RATING
150
UNIT
V
N
i!-1f
::l
It)
, '1-2-;~
d .,j, ~ ..
t,q,..:!
'" <-
Drain-Gate Voltage (RGS=lMfl) VDGR 150 V

1. GATE
DC(Tc=25 DC) fD 5 3. SOURCE
JEDEC TO-220AB
Drain Current DC(Tc=lOODC) ID 3 A EIAJ SC-46
(Tc=25 DC) PD 40 W
Storage Temperature Range Tstg -55'\,150 DC
CHARACTERISTIC SYMBOL M,~X. UNIT
Thermal Resistance, Junction to Case Rth(j-c) 3.12 DC/I,:
Thermal Resistance" Junction to Ambient Rth( i-a) 80 DC/Iv
Muximum Lead Temperature for Soldering 300 DC
or otherwise under any patent or patent rights of TOSHIBA or others, TOSHIBA CORPORATION
-254-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION NIti. TYP. MAX. Ut\IT
VDS=ISOV,VGS=OV,Tc=2S"C - - 2S0 UA
IDSS
VDS=120V,VGS=OV,Tc=12s"C - - 1000 UA
Drain-Source Breakdm<'n Voltage V(BR)DSS ID=2s0UA, VGS=OV 150 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=2s0UA 2.0 - 4.0 V
Forward Transfer Admittance /Yfs/ VDS=IOV, ID=2.SA 1.3 2.S - S
On~State Drain Current ID(ON) Vns=IOV, VGS=IOV S - - A
Drain-Source ON Resistance RDS(ON) In=2.SA, VGS=IOV - O.S 0.8 ~
Drain-Source ON Voltage VnS(ON) ID=SA , VGS=lOV - 2.7 \'

Reverse Transfer Capacitance Crss Vns=2SV, VGS=OV, f=!MHz - 80 pF
Rise Time tr I D=2.SA - 60 ns
Turn-on Time ton lOVn V I l l i glOVOUT - 100 ns
Switching Time o~ g ...,
Fall Time tf lOUs If)
VIN:tr,tf<Sns VDn=7SA
- 60 ns
Turn-off Time toff n.UsI% (Zout=SO~) - 160 ns
VGS=IOV, ID=6A, - nC
SOUTICE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=2S0C)

CHARACTERISTIC SYNBOL TEST CONDITION MIN. TYP. NAX. UNIT
Continuous Source Current IS - - - S A
Diode Forward Voltage VSD IS=SA , VGS=OV, Tc=~S"C - - 2.0 V
Reverse Recovery Time trr Tj=lSO"C, IF=SA, - 3S0 - ns
Reverse Recovered'Charge Qrr dIF!dt=IOOA!Us - 2.3 - vC
TOSHIBA CORPORATION
-255-
( 7l-MOS)
.
1 Cl3I4AX. Ji!l3.6±Cl2
DRIVE APPLICATIONS.
FEATURES: ~*~!~~
Lo\,' Drain-Source ON Resi stance : RDS(0~\)=0.8Q (Typ.) 1---1--1--....::16::.1 ~
High Forward Transfer Admittance: IYfsl=2.SS (Typ.) "'
.-;
Low Leakage Current: IGSS=±SOOnA(Max.) @ VGS=±20V
~1.6!.'.A~=-IlI -. I r
IDSS= 2S0IJA(Hax.) @ VDS=200V
Enhancement-Hade: Vt h=2.Q'\.4.0V @ VDS=VGS,ID=2S0IJA
~.
MAXHIUN RATINGS (Ta=2S0C) 2.54 2.54 ~

:0;
r-
~~t_t~l~
!
Drain-Gate Volt~ge (RGS=lHQ) VDGR 200 V
L GATE
3. SOURCE
DC(Tc=2S0C) ID 4
JEDEC TO-220AB
Drain Current DC(Tc=lOO°C) IIi 2.S A EIAJ SC-46
(Tc=2S0C) PD W
Channel Temperature Tch ISO °C
Storage Temperature Range Tstg -SS"-lSO °C
CHARACTERISTIC 5mBOL MAX. UNIT
Thermal Resistance, Junction to Case Rth(j-c) 3.12 °C/I'I
Thermal Resistance, Junction to Ambient Rth(j-a) 80 °C/I,
or otherwise under any patent or patent rights of TOSHIBA or others. TDSHIBA CORPORATION
-256-
TOSHIBA
TECHNICAL DATA
ELECTRlCAL CHARACTERISTICS (Ta=2S"C)

CHARACTER I STl c: SnlBOL TEST CO~DITION m~. TYP. ~lAX. l1:\IT
Gate Leakaf!E' Current IGSS VGS=±201' • VDS=OV - - ±SOO nA

VDS=200V,VGS=OV,Tc=2S"C - - 250 ~A
IDSS
VDS=160V,VGS=OV,Tc=12S"C - - 1000 ).Jp,
DraIn-Source Breakdol-;n \'01 tage V(BR)DSS ID=2S0).JA, VGS=O\' 200 - - V
Gate Threshold Voltage Vth VDS=VGS. ID=2S0).JA 2.0 - 4.0 V
Forward Transfer Ad~ittance IYfsl VDS=10V. ID=2.SA 1.3 2.S - S
On-State Drain Current ID(m;) VDS=IOV. VGS=IOI' 4 .- - A
Drain-Source ON Resisto:nce RDS(ON) ID=2.SA. VGS=101' - 0.8 1.2 [I
Drain-Source OK Voltage VDS(ON) ID=4A , VGS=IOV - 3.S V

Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV, f=IMHz - 80 pf
Output Capacitance Cos s - 300 pF
Rise Time tr I D-2.SA - 60 ns
Turn-on Time ton IOVn V I T i gIOVOUT - 100 ns
Switching Time o 1<->1 c: -<t
Fall Time tf lO).Js ~ - 60 ns
VIN:tr,tf<Sns VDD=IOOV
Turn-off Time toff D.U:;l% (Zout= SOrl) - 160 ns
Total Gate Charge
VGS=IOV. ID= 6A,
- 11 IS nC

CHARACTERISTIC SYMBOL TEST CONDITION NIN. TYP. ~IAX. UNIT
Diode Forward Voltage VSD IS= 4A , VGS=OV, Tc=:!S"C - - 1.8 V
Reverse Recovery Time trr Tj=IS0"C. IF=SA, - 3S0 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/us - 2.3 - lJ C
TOBHIBA CORPORATION
-257-
(7, -MOS)
1 U3MAX. ¢3.6±Q.2
DRIVE APPLICATIONS.
FEATURES:
Low Drain-Source 0:\ Resistance: RDS(O:\)=O.8Q (Typ.)
~*UI~ ~ ~
High Forward Transfer Admittance: IYfsl=2.SS (Typ.) ...
Low Leakage Current: IGSS=±sOOnA(Hax.) @ VGS=±20V
lDSS= 250jJA(Hax.) @ VDS=150V --l.
-
'"
!;E
II
Enhancement-~lode : Vt h=2.0'C4.0V @ VDS=VGS,ID=250jJA 1.6MAX. a
.£Z.2... .
...t1
HAXIHUH RATINGS (Ta=2S °C) 2.04 2.54 ~

:;

Drain-Gate VoltAge (RGs=lHQ) VDGR 150 V
1. GATE
3. SOURCE
DC(Tc=25°C) ID 4
JEDEC TO-220AB
Drain Current DC(Tc=lOO°C) ID 2.5 A EIAJ 80-46
Pulse IDP 16 TOSHI BA 2-10A3B

(Tc=2S0C) PD
Channel Temperature Tch 150 °c
Storage Temperature Range Tstg -55"'150 °c
Therm"ll Resistance, Junction to Case Rth(j-c) 3.12 °C/\·.'
Thermal Resistance, Junction to Ambient Rth(j-a) 80 °C/I,
TOSHIBA CDRPORATION
-258-
TOSHIBA
TECHNICAL OAT A
ELECTRICAL CHARACT[RISTICS (Ta=25"C)

CHARACTERISTIC SnlBOL TEST CONDITION NIl'. TYP. NAX. llNlT

VDS=150V • VGS=OV. Tc=25"C - - 250 IJA
IDSS
VDS=120V. VGS=OV.Tc=125"C - - 1000 )JA
Drain-Source BreakdO\m Voltage \' (BR)DSS ID=250wA. VGS=O\' 150 - - V
Gate Threshold Voltage \'th VDS=VGS. ID=25OIJ A 2.0 - 4.0 V
For,,'ard Transfer Admi ttance IYfsl VDS=lOV. ID=2.5A 1.3 2.5 - S
On-State Drain Current ID(ON) VDS=lOV. VGS=10V 4 - - A
Drain-Source ON Resist<:mce RDS(ON) ID=2.5A. VGS=10V - 0.8 1.2 n
Drain-Source ON Voltage VDS(ON) ID=4A .VGS=10\' - 3.5 V
Reverse Transfer Capacitance Crss VDS=25V. VGS=OV. f=IMHz - 80 pF
Rise Time tr I D=2.5A - 60 ns
Turn-on Time ton lOVn VI1fl glOVOUT - 100 ns
Switching Time 01H! § C'"l
Fall Time tf lOIJs If) - 60 ns
VIN:tr.tf<5ns VDD= 75V
Turn-off Time toff D.U:sl% (Zout=50flj - 160 ns
Total Gate Charge
VGS=lOV. ID=6A. - 11 15 nC

CHARACTERISTIC SYMBOL TEST CONDITION NlN. TYP. ~lAX. UNIT
Diode Forward Voltage VSD IS=4A . VGS=OV. Tc=~')·C - - 1.8 V
Reverse Recovery Time trr Tj=150·C. IF=5A, - 350 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/IJs - 2.3 - IJC
TOSHIBA CORPORATION
-259-
(7Z' -MOS)

Unit in rom
DRIVE APPLICATIONS. I o.314AX. ¢3.6±o.2
~
FEATURES: ~~ ~[ !~~...
Lm,' Drain-Source Ot( Resistance : RDS(O'i)=0.25Q (Typ.)
High Forward Transfer Admittance : /Yfs/=4.8S (Typ. )
.
<
:s
01
'"
><
;i
r.
,.,III
t1
Low Leakage Current : IGSs=±500nA(Hax.) @ VGS=±20V
I-
IDSS= 250uA(Max.) @ VDS=200V I--l.
.)
Enhancement-~Iode : Vt h=2.()'\..4.0V @ VDS=VGS,ID=250WA
'":s...
II
1.6MAX. 0
,.,t1
~.
I
MAXHIUH RATINGS (Ta=25°C) 2.54 2.54 ~
:s
CHARACTERISTIC
SYNBOL
VDSX
RATING
200
UNIT
V
~l!-1f~
, -1-2-~
.-l . .
.....
. ~!..:t
Drain-Gate Voltnge (RGS=Hlit) VDGR 200 V

1. GATE
DC(Tc=25°C) 3. SOURCE
ID 9
JEDEC TO-220AB
Drain Current DC(Tc=lOO°C) ID 6 A EIAJ 8C-46
Inducti ve Current (Clamped) hp 36 A Weiget : 1.9g
(Tc=25°C) PD 75 W
Storage Temperature Range Tstg -55'\.150 °C
CHARACTERISTIC SmeOL MAX. UNIT
Thermal Resistance, Junction to Case Rth{j-c) 1.67 °C/I':
Thermal Resistance, Juncti on to Ambient Rth(j-a) 80 °C/I';
Huximum Lead Temperature for Soldering 300
-260-
SEMICONDUCTOR Y T F 6 3 0
TOSHIBA
TeCHNICAL DATA

CHARACTERISTIC SnmOL TEST CONDITION HIN. TYP. MAX. l1:-1IT
Gate LeakagE' Current IGSS VGS=±20V, VDS=OV - - ±500 nA
VDS=200V,VGS=OV,Tc=25"C - - 250 j.JA
VDS=160V,VGS=OV,Tc=125°C - - 1000 j.JA
Drain-Source Breakdo~n Voltage V(BR)DSS ID=250j.JA, VGS=OV 200 - - V
Gate Threshold Voltage Vth VDS=V GS , ID=250j.JA 2.0 - 4.0 V
For~ard Transfer Admittance IYfsl VDS=10V, ID-5A 3.0 4.S - S
On-State Drain Current ID(ON) VDS=IOV, VGS=lOV 9 - - A
Drain-Source ON Resistance RDS(ON) ID=5A , VGS=lOV - 0.25 0.40 !?
Input Capacitance Ciss - SOO pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=IMHz - 150 pF
Turn-on Time ton lOVn VI~i glOVOUT - SO ns
Switching Time 0...... ~ .....
Fall Time tf !OJ.Js ..... - 40 ns
Turn-off Time toff D.U:iiI% (Zout=15!?) - 90 ns
VGS=lOV, ID= 12A,
Gate Source Charge QQ:s VDS=160V - 10 - nC
SOU~CE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25"C)

Diode Forward Voltage VSD IS= 9A , VGS-OV, Tc=25°C - - 3.0 V
Reverse Recovery Time trr Tj=150"C, IF=9A, - 450 - ns
Reverse Recovered Charge Qrr dIF/dt=100Ah.ls - 3.0 - j.JC
TOBHIBA CORPORATION
-261-
TOSHIBA SEMICONDUCTOR Y T F6 3 1
TECHNICAL DATA SILICON N CHANNEL_HOS TYPE
( 7l-HOS)
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR J 03MAX. ~3.6±o.2
DRIVE APPLICATIONS.
~
FEATURES: ~~ ~( !-.m i,.. ><
~
Low Drain-Source ON Resistance : RDS(O~)=O.2SrI (Typ.)
g '" t'l
OIl
High Forward Transfer Admittance : IYfsl=4.8S (Typ.) ....
N
Low Leakage Current : IGSS=±SOOnA(Hax.) @ VGS=±20V '" I-
IDSS= 2S0uA(Max.) @ VDS=IS0V ~

'"....
::E
II
Enhancement-Mode : Vt h=2.(Y\.4.0V @ VDS=VGS,ID=2S0UA 1.6MAX. 0
~. '"
....
I
HAXHIUN RATINGS (Ta=2S0C) 2.04 2.54 ~
,..
.
::E
CHARACTERISTIC
SYHBOL
VDSX
RATING
ISO
UNIT
V
'" '"d
t'l
rl ... 1W
·1 - 2 - 3-
I~
Drain-Gate Voltage (RGS=lHn) VDGR ISO V

1. GATE
3. SOURCE
DC(l'c=2S0C) ID 9
JEDEC TO-220AB
Drain Current DC( Tc=l aO°C) ID 6 A EIAJ SC-46
Inductive Current (Clamped) lLp 36 A Wei get : 1.9g

Drain.Power Dissipatipn 75 W
(Tc=25°C) PD
Channel Temperature Tch ISO °C
Storage Temperature Range Tstg -SS"'IS0 °C
CHARACTERISTIC
. SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case Rth(j-c) 1.67 °C!lV
Thermal Resis~ance, Jianction to Ambient Rth(j-a) 80 °C/I~

Purposes (1.6mm from case fOT 10 seconds) TL
-262-
TOSHIBA
TECHNICAL DATA

CHARACTER I STI C SHIBOL TEST CO~DITION HH,. TYP. NAX. UNIT

VDS=150V,VGS=OV,Tc=25"C - - 250 \.JA
IDSS
VDS=120V,VGS=OV,Tc=125"C - - 1000 \.JA
Drain-Source Breakdmm Vol tage V(BR)DSS ID=250\.JA, VGS=OV 150 - - V
Gate Threshol d Voltage Vth VDS=VGS, ID=250\.JA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=10V, ID=5A 3.0 4.B - S
On-State Drain Current ID(ON) VDS=IOV, VGS=10V 9 - - A
Drain-Source ON Resist<:.nce RDS(ON) ID=5A , VGS=10V - 0.25 0.40 r2
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=IMHz - 150 pr
r"" -
Output Capacitance Coss 450 pF
Switching Time
Turn-on Time ton a ...... VIT~
lOVJ1 c: ..... - BO ns
Fall Time tf 10\.Js ~ I - 40 ns
VIN:tr,tf<5ns 'D =90V
Turn-off Time toft D.U:;I% (Zout=15 Q) - 90 ns
Total Gate Charge
VGS=10V, ID=12A, - 19 30 nC
Gate-Drain ("Miller") Charge Ckd - 9 - nC

Diode Forward Voltage VSD IS= 9A , VGS=OV, Tc=25"C - - 2.0 V
Reverse Recovered Charge Qrr dIF!dt=100A!l,ls - 3.0 - \.JC
TOBHIBA CORPORATION
-263-
( 7l-MOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in D1r:1
CHOPPER REGULATOR, OC-OC CONVERTER AND MOTOR
11l.3MAX. f/l3.6±Cl.2
DRIVE APPLICATIONS.
FEATURES:
La" Drain-Source 0:\ Resjstance : RDS(O~)=O.4rl (Typ.)
High Forward Transfer Admjttance : IY(sl=4.8s (Typ.)
Low Leakage Current : IGSS=±50OnA(Hax.) @ VGS=±20V
IDSS= 250jJA(Hax.) @ VDS=200V J
• Enhancement-~lode : Vth =2.CJ'\.4.0V @ VDS=VGS,ID=250jJA ~1.6MA~~·1II
~.
HAXIMUM RATINGS (Ta=25°C)

CHARACTERISTIC SnmOL RATING UNIT
Drajn-Gate VoltAge (RGS=1HD) VDGR 200 V
1. GATE
3. SOURCE
DC(Tc=25°C) In 8
JEDEC TO-220AB
EIAJ 8C-46
Pulse IDP 32 TOSHIBA 2-]OA3B
Inductive Current (Clamped) hp 32 A Wei get : 1. 9g

(Tc=25°C) PD W
THERHAL CHARACTERISTICS
CHARACTERISTIC SYMBOL HU. UNIT
ThermD1 RE'sj stimce, Junction to Case Rth(j-c) 1.67 °C/\':
Thermal Resjstance, Junctlon to Ambjent Rth(j-a) 80 °C/\':
The information contained herein IS presented only as a guide for the applications of Qur
-264-
TOSHIBA
TECHNICAL DATA

CHARACTERISTl C SYNBOL TEST CONDITION NIN. TYP. ~lAX. lINJT

VDS=200V,VGS=OV,Tc=2S"C - - 2S0 uA
IDSS
VDS=160V,VGS=OV,Tc=12S"C - - 1000 UA
Drain-Source BreakdOl,'n Vol tage V(BR)DSS ID=2S0UA, VGS=OV 200 - - V
Gale Threshold Volta3e Vth VDS=VGS, ID=2S0UA 2.0 - 4.0 V
Forward Transfer Admittance l)'fsl VDS=lOV, ID=SA 3.0 4.8 - S
Drain-Source ON Resist&nce RDS(ON) ID=SA , VGS=10V - 0.4 0.6 n
Drain-Source ON Voltage VDS(ON) ID=8A , VGS=10V - 3.S V
Reverse Transfer Capacitance Crss VDS=2SV, VGS=OV, f=IMHz - ISO pF
Rise Time tr ID=SA - SO ns
Turn-on Time ton lOVn V I T i ~l OVOUT - 80 ns
Switching Time 0...... C ,....,
Fall Time tf lOus ~
- 40 ns
Turn-off Time toff D.U~I% (Zout= ISO) - 90 n1:;
Total Gate Charge
VGS=lOV, In=12A. - 19 30 nC

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNlT
Diode Forward Voltage VSD IS=8A , VGS=OV, Tc=2S"C - - 1.8 V
Reverse Recovery Time lrr Tj=IS0"C, IF=9A, - 4S0 - ns
Reverse Recovered Charge Qrr dIF!dt=lOOA!IJS - 3.0 - I1C
TOBHIBA CORPORATION
-265-
SILICON .~ CHANNEL MOS TYPE
TECHNICAL DATA
(7! -HOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Unit in rom
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 Cl3MAX. J1.I3.6±Cl~
DRIVE APPLICATIONS.
~
FEATURES: ~j ~[ !~~,.. ><
<
Lm,' Drain-Source ON Resistance : RDS(ON)=0.4n (Typ. )
~
'" ::Ii
to
High Fon,ard Transfer Admittance : IYfsl=4.8S (Typ. ) ::Ii '"

rl
Low Leakage Current : IGSS=±SOOnA(Max.) @ VGS=±20V

'"t1
f-
IOSS= 2S0~A(Max.) @ VDS=IS0V l----1 :z:
H
::Ii
II
• Enhancement-~lode : Vth=2.~.OV @ VDS=VGS,ID=2S0~A 1.6 MAX. 0
t1
rl
0.76
I
MAXHlUN RATINGS (Ta=2S0C) 2.04 2.64 ~
::Ii
CHARACTERISTIC
SYHBOL
VDSX
RATING
150
UNIT
V
~~ .TW~
.-< ...
'1 - 2 -:l'
Drain-Gate VoltBge (RGS=IMn) VDGR 150 V

1. GATE
Gate-Source Voltage YGSS +20 V 2. DRAIN (HEAT SINK)
3. SOURCE
DC(Tc=,2S0C) 10 8
JEDEC TO-220AB
Pulse IDP 32 TOSHIBA 2-10A:lB
Drain PO\ver Dissipation 75 W
(Tc=,2S0C) PD
Storage Temperature Range Tst2 -55"'150 °C
Thermn] Resistance, Junction to Case Rth{j-c) 1.67 °C/I'!
Thermn] Resistance, Junction to Ambient Rth(j-a) 80 cC/I':
Muximum Lead Temperature for Soldering 300 cC
TOSHIBA CORPORATION
-266-
TOSHIBA
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Td=2~"C)
CHARACTERISTIC SYHI:IOL TEST CONDITION mi\. TYP. ~lAX.liN IT


VDS=IS0V,VGS=OV,lc=25"C - - 250 lJA
IDSS
VDS=120V,VGS=OV,Tc=12S"C - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS ID=2S0lJA, VGS=OV 150 - - \'
Gate Threshold Volta~e Vth VDS=V GS , ID=250lJA 2.0 - 4.0 \'
forward Transfer Admittance IYfsl VDS=lOV, ID=SA 3.0 4.8 - S
Drain-Source ON Resist~nce RDS(ON) ID=SA , VGS=lOV - 0.4 0.6 li
Drain-Source ON Voltage VDS(ON) ID=8A , VGS=lOV - 3.5 \'
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=lHHz - 150 pF
Rise Time tr ID=SA - 50 ns
Switching Time
lOVn
s:; .~!
. . OVOUT - 80 ns
Fall Time tf 10lJs ..... - 40 ns
Turn-off Time toff D.U~l% (Zout=ISlij - 90 n[;
(Gate-Source Plus Gate-Drain) Qg VGS=10V, ID= 12A,
- nC
Gate-Drain ("Hiller") Charge Qgd - 9 - nC

Diode Forward Voltage VSD IS= 8A , VGS=OV, Tc=~5"C - - 1.8 V
Reverse Recovered Charge Qrr dIF/dt=100A/lJs - 3.0 - lJC
TOBHIBA CORPORATION
-267-
(7Z' -MOS)

Unit in IMI
DRIVE APPLICATIONS. l!lJMAX. ;<!:J.6:!:!l2
~1-
FEATURES: i1"b{'r ;j~
XfI ...:::I. .;<
. Low Drain-Source ON Resistance : RDS(ON)=2.5~ (Typ.)
~
~
..,
:Ii
High Forward Transfer Admittance : !Yfs!=1.75S (Typ.) <

:::I ...'"
Low Leakage Current : IGSS=±500nA(Max.) @ VGS=±20V "
'" r---i ' I
IOSS= 250~A(Max.) @ VOS=500V I, I ...z
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,IO=250~A 1.5 MAX. Ii Ii " :::I
0
II,
I; ...'"
d
;
MAXIMUM RATINGS (Ta=25°C) 2.540

~
: ,I
2.54-
,.
~
I
CHARACTERISTIC
SYMBOL
VOSX
RATING
500
UNIT
V
~!1f
Col
.
t')
...
. .M~
r
III
d ".
·1 ~2·3·
co
N
.,;.
T
Drain-Gate Voltage (RGS=lMQ) VDGR 500 V I. GATE
Gate-Source Voltage VGSS ±20 V 2. Dun (HEAT SIH)
3. SOURCE
DC(Tc=25'C) 10 2.5
JEDEC TO-220AB
Drain Current OC(Tc=100'C) 10 1.5 A EIAJ se-406
Pulse lOp 10 TOSHI3A 2-10A3B
(Tc=25'C) PD 40 W
Storage Temperature Range Tstst -55'\0150 °C
Thermal Resistance, Junction to Ambient Rth(j-a) 80 'C/W
The information contained herein is' presented only as a guide for the applications of our
products. No respOnsibility is assumed by TOSHIBA for any infringements of patents or other
-268-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. ~IAX. UNIT
Gate Leakage Current IGSS VCS=±20V, VDS=OV - - ±500 nA
VOS=500V,VGS=OV,Tc=25°C - - 250 IJA
Drain Cut-off Current lOSS
VDS=400V,VGS=OV,Tc=125°C - - 1000 \JA
Drain-Source Breakdown Voltage V(BR)OSS IO=250uA, VGS=OV 500 - - V
Gate Threshold Voltage Vth i'OS=VGS, ID=250UA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VOS=lOV, ID=lA 1.0 1. 75 - S
Drain-Source ON Resistance RDS(ON) IO=lA , VGS=lOV - 2.5 3.0 rl
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, f=H!Hz - 40 pF
Switching Time
Rise Time
Turn-on Time
tr
ton lOVn VI~l
o ..... c:
lO\Js ~
g!
ID=IA
If)
OVOUT
-
-
50
110
ns
ns
Fall Time tf N
- 30 ns
VIN:tr,tf<5ns VOO=250V
Turn-off Time toff D.U~l% (Zout=50rl) - 90 ns
Total Gate Charge
VGS=lOV, ID=3A, - II 15 nC

CHARACTERISTIC SY:1BOL TEST CONDITION NIN. TYP. MAX. UNIT
Oiode Forward Voltage VSD IS=2.5A, VGS=O'l, Tc=25°C - - 1.6 V
Reverse Recovery Time trr Tj=150°C, IF=2.5A, - 600 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/\Js - 3.5 - ).!C
TOSHIBA CORPORATION
-269-

( 7l' -MOS)

Unit in !l'JD
DRIVE APPLICATIONS.
FEATURES:
Low Drain-Source ON Resistance: RDS(ON)=2.sQ (Typ.)
High Forward Transfer Admittance: IYfsl=1.7sS (Typ.)
Low Leakage Current: IGSS=±SOQnA(Max.) @ VGS=±20V
IDSS= 2sOUA(Max.) @ VDS=4s0V
• Enhancement-Mode Vth=2.~.OV @ VDS=VGS,ID=2s0UA

Drain-Gate VoltRge (RGS=IMn) VDGR 450 V 1. GHE
Gate-Source Voltage VGSS ±20 V 2. ORAn (HEAT SINK)
3. SOURCE
DC(Tc=2s·C) ID 2.5
JEDEC TO-220AB
Drain Current DC(Tc=lOO·C) ID 1.5 A EIAJ SC-~6
Pulse lOp 10 TOSHIBA 2-10A3B
Inductive Current (Cla~ped) ILP 10 A Weight : 1.9g
(Tc=2S·C) Po 40 W
Storage Temperature Range Tst!! -55'0150 ·C
Thermal Resistance, Junction to Case Rth(j-c) 3.12 ·C!W
-270-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SY~lBOL TEST CONDITION NIN. TYP. ~lAX. UNIT

VOS=450V, VGS=OV, Tc=25°C - - 250 w.\
lDSS
VDS=360V, VGS=OV, Tc=I25°C - - 1000 WA
Drain-Source Breakdown Voltage V(BR)DSS ID=250WA, VGS=OV 450 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=250WA 2.0 - 4.0 V
Forward Transfer Admittance I Yfsl VDS=IOV, ID=IA 1.0 1.75 - S
On-State Drain Current lD(ON) VDS=IOV, VGS=lOV 2.5 - - A
Drain-Source ON Resistencc RDS(ON) ID=IA , VGS=lOV - 2.5 3.0 rl
Drain-Source ON Voltage VOS(ON) IO=2.5A, VGS=lOV - 6.9 V
Reverse Transfer Capacitance Crss VOS=25V, VGS=OV, f=lMHz - 40 pF
Output Capacitance Coss - ISO pF
Rise Time tr ID=lA - 50 ns
Turn-on Time ton lOV]1 VI~1 ~f OVOUT - no ns
Switching Time 0...... c: N
Fall Time tf lOws ~ N - 30 ns
VlN:tr,tf<5ns VDD=225V
Turn-off Time toff O.U~I% (Zout=50rl) - 90 ns
Total Gate Charge
VGS=lOV, ID=3A, - II 15 nC

CHARACTERISTIC SnlBOL TEST CONDITION mN. TYP. NAX. CNIT
Diode Forward Voltage VSD IS=2.5A, VGS=OV, Tc=25°C - - 1.6 V
Reverse Recovery Time trr Tj=I50°C, IF=2.5A, - 600 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/ws - 3.5 - J.;C
TOSHISA CORPORATION
-271-
(1t-MOS)
I Cl3I4AX. j1J3.6±Cl2
DRIVE APPLICATIONS.
FEATURES:
J*OI~ ~ ~
• High Forward Transfer Admittance: IYfsl=1.75S (Typ.) ...
Low Leakage Current: IGSS=±50OnA(Max.) @ VGS=±20V
IDSS= 250uA(Max.) @ VDS=500V
• Enhancement-Mode: Vt h=2.0-4.0V @VDS=VGS,ID=250UA ~1.6MA~'"'-4III-' II
'1
~

!
Drain-Gate Voltage (RGS=lMrl) VnGR 500 V
1. GATE
3. SOURCE
JEDEC TO-220AB
Drain Current DC(Tc=100°C) ID 1 A EJAJ SO-46
r-~~~~~~--~4
(Tc=25°C) 40 W
Channel Temperature 150

Storage Temperature Range -55"'150
Purposes (1.6mm from case for 10 seconds} TL
-272-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CO~DITION NIN. TYP. MAX. U1'\IT
Gate Leakage Current IGSS VGS=±20\' , VDS=OI' - - ±500 nA
VDS=500V ,I'GS=O", Tc=25 DC - - 250 uA
IDSS
VDS=400V ,VGS=OV, Tc=125 DC - - 1000 lJA
Drain-Source Breakdown Voltage V(BR)DSS ID=250UA, VGS=O\, 500 - - \'
Gate Threshold Voltage "th VDS=VGS, ID=250UA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=lOV, ID=IA 1.0 1.75 - S
Drain-Source ON Resist~nce RDS(ON) ID= lA , VGS=lOV - 3.0 4.0 rl
Rise Time tr I D= lA - 50 ns
Turn-on Time ton lOVn VI~1 §IoVOUT - 110 ns
Switching Time o .... c: LI'\
Fall Time tf lOus ~ N - 30 ns
Turn-off Time loff D.U~l% (Zout=50rl; - 90 ns
(Gate-Source Plus Gate-Drain) Qg VGS=lOV, ID= 3A, - 11 nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25 DC)

Diode Forward Voltage VSD IS=2A , VGS=OV, T(:=~5DC - - 1.5 V
Reverse Recovered Charge Qrr dIF/dt=lOOA/lJs - 3.5 - lJC
TOSHIBA CORPORATION
-273-
(1Z'-MOS)
CHOPPER REGULATOR, DC-DC CONVERTER AND HOTOR
1 Cl3Io!AX. JZl3.6±Cl~
DRIVE APPLICATIONS.
FEATURES:
Low Drain-Source ON Resistance: RDS(ON)=3.0Q (Typ.)
~igh Forward Transfer Admittance: !Yfs!=1.7SS (Typ.)
Low Leakage Current: IGSS=±50OnA(Max.) @ VGS=±20V
IDSS= 2S0~A(Max.) @ VOS=4S0V
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=2S0~A
MAXIMUM RATINGS (Ta=2S'C)

Drain-Source Voltage VDSX 4S0 V
L GATE
3. SOURCE
DC(Tc=2S'C) 1D 2
JEDEC TO-220AB
Drain Current OC(Tc=lOO'C) 10 1 A EIAJ SC-46
Pulse IDP 8 TOSHIBA 2-10A!lB
(Tc=2S0C) Po
TOBHIBA CORPORATION
-274-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SYHBOL TEST C01>DITION HlN. TYP. MAX. UNIT
VDS=4S0V, VGS=OV, Tc=25"C - - 250 \JA
IDSS
VDS=360V, VGS=OV, Tc=125"C - - 1000 \JA
Drain-Source Breakdown Voltage V(BR)DSS ID=250\JA, VGS=OV 450 - - V
Forward Transfer Admittance IYfsl VDS=lOV, ID=IA 1.0 1.75 - S
Drain-Source ON Resistance RDS(ON) ID=lA , VGS=lOV - 3.0 4.0 st
Output Capacitance Coss - ISO pF
Rise Time tr I D= lA - 50 ns
Turn-on Time ton 10Vn VI~i ~I OVOUT - 110 ns
Switching Time 0"",, g N
Fall Time tf lO\Js Ll'\ N - 30 ns
Turn-off Time ns
toff
.
D.usl% (Zout=50st; -
.90
VGS=lOV, ID=3A.

CHARACTERISTIC SYMBOL TEST CONDITIO", MIN. TYP. HAX. UNIT
Diode Forward Voltage VSD IS=2A , VGS=OV, Tc=~5"C - - 1.5 V
Reverse Recovery Time trr Tj=150°C, IF=2.SA, - 600 - ns
Reverse Recovered Charge Qrr dIF/dt=lOOA/\Js - 3.S - \JC
TOBHIBA CORPORATION
-275-
(1Z' -HOS)

Unit in CUD
DRIVE APPLICATIONS. 1 113 KAX. ¢:J.6:!:112
FEATURES:
Low Drain-Source ON Resistance: RDS(ON)=1.3Q (Typ.)
• High Forward Transfer Admittance: IYfsl=3.2SS (Typ.)
Low Leakage Current: IGSS=±500nA(Max.) @ VGS=±20V
IOSS= 250uA(Max.) @ VOS=500V
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,IO=2S0~A

Drain-Gate Voltage (RcS=lMn) 500 V
Gate-Source Voltage ±20 V
3. SOURCE
DC(Tc=25°C) ID 4.5
Orain Current DC(Tc=100°C) 3 A
EIAJ' SC-4.6
Pulse 18 TOSHI9A 2-10A3B
Inductive Current (Clamped) 18 A !{eight : 1.9g
(Tc=25°C) 75 W
Channel Temperature 150
Storage Temperature Range -55'1,150
Thermal Resistance, Junction to Ambient Rth(j-a) 80 °C!W
TOBHIBA CORPORATION
-276-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC snlBOL TEST CONDITIO~ HIN. TYP. HAX. UNIT
VDS=500V, VGS=OV, Tc=25"C - - 250 IlA
IDSS
VDS=400V,VGS=OV,Tc=125°C - - 1000 IlA
Drain-Source Breakdown Voltage V(BR)DSS ID=2501lA, VGS=OV 500 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=25OIlA 2.0 - 4.0 V
Forward Transfer Admittance I Yfsl VDS=lOV, ID=2.5A 2.5 3.25 - S
On-State Drain Current ID(ON) \"ns=lOV, VGS=lOV 4.5 - - A
Drain-Source ON Resistance RDS(O:-l) ID=2.5A, VGS=lOV - 1.3 1.5 rI
Reverse Transfer Capacitance Crss VDS=25V, VGS=OV, £=l~rnz - 60 pF
Turn-on Time ton lOVJ1 VI~i gIOVOUT - 60 ns
Switching Time o .... S:; a-
Fall Time t£ 10IJs '""
VI:-I:tr,t£<5ns VDD=225V
- 30 ns
Turn-off Time toff D.VSl% (Zout=15r1) - 85 ns
Total Gate Charge
VGS=lOV, ID=6A, - 22 30 nC

CHARACTERISTIC S~lBOL TEST CONDITION NIN. TYP. NAX. UNIT
Reverse Recovered Charge Qrr dIF!dt=lOOA/lJs - 4.6 - wC
TOSHISA CORPORATION
-277-
SEMICONDUCTOR YT F 8 3 I
TECHNICAL DATA
(7Z' -MOS)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIO~S

Unit 1n mm
CO
H PPER REGULATOR, DC-DC CONVERTER AND MOTOR
DRIVE APPLICATIONS. 10.3 MAX. ¢:l.6:!:0.2
;t~
J,f-
FEATURES: l1-.LOC s
XV r-
.~
~
<
Low Drain-Source ON Resistance : RDS(ON)=1.3~ (Typ.) s
,.;
High Forward Transfer Admittance : IYfsl=3.2sS (Typ.) <
s '"
;1
~
Low Leakage Current : IGSS=±sOQnA(Max.) @ VGS=±20V ,.,

<l
• Enhancement-Mode :
IDSS=
Vth=2.~.OV
2s0~A(Max.) @ VDS=4s0V
@ VDS=VGS,ID=2s0~A
'i! :I ,.!
...sz
..,...
I
~i
L5MAX. 0
~Ii ,.;
MAXIMUM RATINGS (Ta=2s·C) 2.54- 2.54- <
s
CHARACTERISTIC
Orain-Source Voltage
SYMBOL
VOSx
RATING
450
UNIT
V
10:f
,
.
'"'
...
. .m~
d ".
-1 ~2-3-
oJ
t
Orain-Gate Voltage (RGS=lMn) VOGR 450 V 1. GATE
Gate-Source Voltage VGSS ±20 V 2. DRAI~ (HEAT SINK)
3- SOURCE
DC(Tc=2s·C) 10 4.5
JS:DEO TO-220AB
Orain Current OC(Tc=lOO·C) 10 3 A EIAJ SO-4.6
Orain Power Dissipation
(Tc=2s·C) Po 75 W
Storage Temperature Range TstR -55"'150 ·C
Thermal Resistance, Junction to Ambient Rth( i-a) 80 ·C/W
Purposes (1.6mm from case fo~ 10 seconds) TL 300
1.....•
TOSHIBA CDRPORIo'.TION
-278-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC snlBOL TEST CONDITION HIN. TYP. MAX. UNIT
\'DS=450V, VGS=OV, Tc=25°C - - 250 uA
VOS=360V,VGS=OV,Tc=125°C - - 1000 UA
Drain-Source Breakdown Vol tage V(BR)DSS ID=250UA, VGS=OV 450 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=25OUA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VOS=lOV, ID=2.5A 2.5 3.25 - S
Drain-Source ON Resistance RDS(ON) IO=2.5A, VGS=lOV - 1.3 1.5 Q
Orain-Source ON Voltage VDS(ON) ID=4.5A, VGS=lOV - 6.4 V

I D= 2.5A
Switching Time
Rise Time
Turn-on Time
tr
ton 10VJl VItr~
0,.... c:
gf
0\
OVOUT
-
-
30
60
ns
ns
Fall Time tf lOUs ~ , - 30 ns
VI:-I:tr,tf<5ns VOO=225V
Turn-off Time toff O. U:il% (Zout= 15Q) - 85 ns
Total Gate Charge
VGS=lOV, IO=6A, - 22 30 nC
Gate Source Charge QI1.S VDS=360V - 11 - nC
Gate-Drain ("Miller") Charge Qgd - 11 - ne

CHARACTERISTIC SYMBOL TEST CONDITIO:-l rIIN. TYP. :-IAX. UNIT
Reverse Recovered Charge Qrr dIF/dt=100A/us - 4.6 - J,;C
TOSHISA CORPORATION
-279-
TECHNICAL DATA
O[-MOS)
1 o.!3I4AX. ¢3.6±Cl~
DRIVE APPLICATIONS.
FEATURES:
• Low Drain-Source ON Resistance: RDS(ON)=l.Sn (Typ.)
• High Forward Transfer Admittance: IYfsl=3.2SS (Typ.)
• Low Leakage Current: IGSS=±SOOnA(Max.) @ VGS=±20V
IDSS= 2S0lJA(Max.) @ VDS=500V ~
• Enhancement-Mode : Vth=2.~.OV @ VDS=VGS,ID=2S0jJA

-=L~6~I4A~X,,-.-IlII-/1 ~ I
~'il
II'----~
MAXIMUM RATINGS (Ta=2S DC)

L GATE
DC(Tc=2S DC) ID 4
3. SOURCE
JEDEC TO-220AB
Drain Current DC(Tc=100 DC) ID 2.5 A EIAJ SC-46
(Tc=25 DC) PD W
Storage Temperature Range Tstg -55"'150 DC
Thermal Resistance, Junction to Ambient Rth( i-a) 80 DC/W
TOSHIBA CORPORATION
-280-
TOSHIBA
TECHNICAL DATA

CHARACTERISTIC SnlBOL TEST CONOITION HIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS=±20V. VOS=OV - - ±500 nA

VOS=500V. VGS=OV.Tc=25°C - - 250 uA
lOSS
VOS=400V. VGS=OV. Tc=125°C - - 1000 UA
Drain-Source Breakdown Voltage V(BR)OSS IO=250UA• VGS=OV 500 - - V
Gate Threshold Voltage Vth VOS=VGS. IO=25OU A 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VOS=IOV. IO=2.5A 2.5 3.25 - S
On-State Drain Current ID(ON) VDS=lOV. VGS=IOV 4 - - A
Drain-Source ON Resistc:nce RDS(ON) IO=2.5A, VGS=10V - 1.5 2.0 Q
Drain-Source ON Voltage VDS(ON) IO=4.5A, VGS=lOV - 7.4 V
Reverse Transfer Capacitance Crss VOS=25V, VGS=OV, f=Hlliz - 60 pF
Turn-on Time ton lOVn V I T i §loVOUT - 60 ns
Switching Time o ...... :;:; 0-
Fall Time tf lOus .....
VlN:tr,tf<5ns
.
VDO=225V
- 30 ns
Turn-off Time toff O.U:5I% (Zout= 15Q; - 85 ns
Total Gate Charge
VGS=IOV. ID= 6A, - 22 30 nC
Gate Source Charge QII.S VDS=400V - 11 - nC
Gate-Drain ("Miller") Charge QlI.d - 11 - nC
SOURCE-DRAIN OIODE RATINGS ANO CHARACTERISTICS (Ta=25°C)

Diode Forward Voltage
Reverse Recovery Time
VSO IS= 4A . VGS=OV,
Tj=150°C, IF= 4.5A.
Tc_~5°C
-
- -
800
1.5
- ns
V
trr
Reverse Recovered Charge Qrr dIF/dt=IOOA/us - 4.6 - uC
TCSHI_ CORPORATION
-281-
TECHNICAL DATA
O(-MOS)

Unit in nun
CHOPPER REGULATOR, DC-OC CONVERTER AND MOTOR
DRIVE APPLICATIONS. lo.3MAX. jZl3.6±o.2
~
FEATURES: Jj:. ~( -.-lli~... ...
Low Drain-Source ON Resistance: RDS(ON)= 1.5Q (Typ.)
~
'" eo::i
High Forward Transfer Admittance: IYfsl= 3.25S(Typ.) s ...'"
'"
IDSS= 250~A(Max.) @ VDS=450V r--; . z
• Enhancement-Mode : Vt h=2.0"I4.0V @ VOS=VGS,IO=250~A 1.6MAX. lir Sl
0
~ 'r-
I II, '"
rl
I
MAXIMUM RATINGS (Ta=25 DC) 2.1>4 2.54 ~
S
...
CHARACTERISTIC
Orain-Source Voltage
SYMBOL
VOSX
RATING
450
UNIT
V
1!3f
~
,
d ..
'1 -
~
2-3'~
.. ~I-!!
Drain-Gate Voltage (RGS=lMQ) VOGR 450 V
1. GATE
DC(Tc=25 DC) '10 4 3. SOURCE
JEDEC TO-220AB
Drain Current DC(Tc=lOODC) 10 2.5 A EIAJ 8C-46
(Tc=25 DC) Po W
Channel Temperature Tch ISO DC
Storage Temperature Range Tstg -55'V150 DC
Thermal Resistance, Junction to Ambient RthCi-a) 80 ·C/W
Purposes O.6mm from case for 10 secondsJ_ TL 300
-282-
SEMICONDUCTOR
TOSHIBA Y T F 8 3 3
TECHNICAL DATA


IDSS
Drain-Source Breakdown Voltage V(BR)DSS ID=2501JA, VGS=OV 450 - - V
Gate Threshold Voltage Vth VDS=VGS, ID=25OIJA 2.0 - 4.0 V
Forward Transfer Admittance IYfsl VDS=10V, ID=2.5A 2.5 3.25 - S
Drain-Source ON Resistance RDS(ON) ID=2.5A, VGS=lOV - 1.5 2.0 n
Drain-Source ON Voltage VDS(ON) ID=4·5A, VGS=10V - 7.4 V
Switching Time
Rise Time
Turn-on Time
Fall Time
tr
ton
tf
10Vn VIT~
o10IJs
1<->1 ~
.-<
gr
I D= 2.5A
'"
VOUT
-
-
-
30 ns
60 ns
30 ns
Turn-off Time toff D. U:li1% (Zout= 15n; - 85 ns
Total Gate Charge
VGS=10V, ID= 6A,

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. ~lAX. UNIT
Reverse Recovery Time trr Tj=150°C, IF= 4.5A, - 800 - ns
Reverse Recovered Charge Qrr dIF/dt=100A/lJs - 4.6 - IJC
TOSHIBA CORPORATION
-283-
TOSHIBA DIODE
TOSHIBA SEMICONDUCTOR IN914. IN914A. IN914B
TECHNICAL DATA SILICON EPITAXIAL PLANAR
Unit in rom
COMMUNICATION AND INDUSTRIAL APPLICATIONS.
HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
FEATURES:
{£1l '&.
Low Forward Voltage : VF=1. OV (Max.)
Small Total Capacitance : CT=4pF (Max.) :z:
H
::;;
Fast Reverse Recovery Time : trr=4ns (Max. ) a
Hermetically Sealded Miniature Glass Package. ""'"
r'
~
""...
CATHODE MARK /~ ~
CHARACTERISTIC SYMBOL RATING UNIT ¢o.5
.;
H
::;;
Maximum (Peak) Reverse Voltage VRM 100 V a
Reverse Voltage
Maximum (Peak) Forward Current
VR
IFM
75
450 mA
V
~ '"""
JEDEC DO 35
Average Forward Current 10 150 mA EIAJ SC-4,O
Surge Current (ltts) IFSM 2 A TOSHIBA 1-2AIA
Power Dissipation P 500 mW Weight: 0.14g
Storage Temperature Range Tstg -65 - 200 °c

lN9l4 VF(l) IF=lOmA - 0.75 1.0 V
Forward Voltage lN9l4A VF(2) IF=20mA - 0.79 1.0 V

VF(3) IF=5mA 0.62 0.67 0.72 V
IN9l4B
VF(4) IF=lOOmA, t=lOms - 0.9 1.0 V
IR(l) VR=20V - - 25 nA
Reverse Current IR(2) VR=20V, Ta=150°C - - 50 p.A
IR(3) VR=75V - - 5 ttA

Total Capacitance CT VR=O, f=lMHz - 0.9 4.0 pF
Reverse Recovery Time trr IF=lOmA, VR=6V - 2.0 4.0 ns

RL=lOo.a, Irr=lmA
-284-
SEMICONDUCTOR
TOSHIBA IN914. IN914A. IN9148
TECHNICAL DATA
1000 104
TYPICAL CHAR.
t = lOms Hi //
:;;-
lri"
Ta 25"(;
100
"
~
0 If 1if
~ ~~~(;,c '"
=f=r- '- Co/ z
'gj" TYPICAL
"~ ~.'" p 10
0
r-
V "'III" 1
>
UO
0 U2 0 U6 US 1.0 1.2 1.4 1.6
"''" 40 60 so 100
FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V)
1.50
I Ta= 25"C j.)
r;:.,. I ,,'- - 3.0
1.25 f = IMHz 0>
~
8
I "'~
@
0
'" IDO TYPICAL
IZI
H>-
-2.5
r-..
o 1'1'.[0
.'z"
0
~
U75
H
~~
g ~....
_ 2.0
"(Jill
r--
...
0
p, MO
"''''
t§~-1.0
-1.5
.'"
....0 0.25
.'" "
!i -[45
'" iilo
,
"0 100
'" '" 0 ,
UO" Ul 1
, 100
REVERSE VOLTAGE VR (V) FORWARD CURRENT
rth - t
MAXIMUM TRANSIENT
I-'
lri"
VR=75 V
:',.o~\>
.''""
'-'
z THERMAL RESISTANCE
(MOUNTING ON 1.6mm GLASS EPOXY PC
'"'" «:,,« i'l MOUNTING HOLE SPACING=12.5mmBOARD)
0
lei' ""'~ 300
"'''
",,-
'" ;ie
"'"
t" 200
H 10 III
'"
;i '"'" <-.c..,
.... V
"'z
0
V
z
'"
H
100
~ .
"
Z i--'"
l-
"''" o
I--'
25 50 75 100 125 1.50 175 10-{l 10 2 10- 1 10 100
AMBIENT TEMPERATURE Ta eC) PULSE WIDTH t (sec;
TOSHISA CORPORATION
-285-
TOSHIBA DIODE
TOSHIBA SEMICONDUCTOR IN916, IN916A, IN9168
TECHNICAL OAT A SILICON EPITAXIAL PLANAR
Unit in mm
COMMUNICATION AND INDUSTRIAL APPLICATIONS
FEATURES:
iLl{
Low Forward Voltage : VF=1.0V (Max.)
Small Total Capacitance : CT=2pF (Max.) rz.'
H
::iI
Fast Reverse Recovery Time : trr=4ns (Max.) 0
Hermetically Sealded Miniature Glass Package.

, "''"
r-'
..'""
:;]

CATHODE MARK / ' - -
,
CHARACTERISTIC SYMBOL RATING UNIT ¢Cl5
rz.'
H
::iI
Maximum (peak) Reverse Voltage VRM 100 V 0
Reverse Voltage VR 75 V "''"

Maximum (Peak) Forward Current IFM 450 rnA
JEDEC DO-35
Average Forward Current 10 150 rnA EIAJ 80-40
Surge Current (l.us) 1FSM 2 A TOSHIBA 1-2AIA
Power Dissipation P 500 rnW Weight : 0.14g

lN9l6 VF(l) IF=lOmA - 0.75 1.0 V
Forward Voltage lN9l6A VF(2) 1F=2OmA - 0.79 1.0 V

VF(3) 1F=5mA 0.63 0.68 0.73 V
lN916B
VF(4) 1F=30mA - 0.81 1.0 V
IR(l) VR=20V - - 25 nA
Reverse Current IR(2) VR=20V, Ta=150·C - - 50 .uA
IR(3) VR=75V - - 5 .uA
Total Capacitance CT VR=O, f=IMHz - 0.9 2.0 pF
IF=lOmA, VR=6V I
Reverse Recovery Time trr - 2 4 ns
RL=lOO.o., Irr=lmA
TOSHIBA CORPORATION
-286-
SEMICONDUCTOR
TOSHIBA
TECHNICAL DATA IN916. IN916A. IN9168
1000 104,
<-8
~ TYPICAL CHAR.
t = 10ms ~ ~
<c
Ta 25"(;
~ 100 // 1ci5
.!'
~
...z 10 1/
...z 102
I"l
F ~F'CJ,c
gj I- L- ,,0t- ~/fi I"l
iili=>
TYPICAL
i=> 1 ~ /J'::L
~ -.'"
0 10
A
r= 0
i°
I"l
OJ
0.1 [lj 1
f<;
0.01
..
>
I"l
o 0.2 0.4, 0.6 0.8 LO 1.2 L4, L6 4,0 60 80 100

150 ~
I 111111 Ta= 2S'C i-'

~ 1..25
I II III f = ll4Hz
f<;"
0i;
- 3.0
... II III ... ~

z -2.S
o
LOO TYPICAL
I"l f<;
H .... r-.
~
I"l
o
Z
e:: 0.75
..
f<;
I"ll"l
- 2.0
1'yp"
O.olL
I
g~-1.5 C'"-
H
o
p; o.sO I"lH
...
o<
g;... f; -LO
<A
...:;;:o 0.25
~~ -as
... I"lO
.... f<; 0
1 10 100 aOl 0.1 1 10 100
REVERSE VOLTAGE VR (V) FORWARD CURRENT IF (mA)
rth - t
MAXIMUM TRANSIENT
VR=75 V
THERMAL RESISTANCE
lei'
i-' :<,.c't>'\> ( MOUNTING ON 1.6mm GLASS EPOXY PC
"''" ,,"'>:~
300
MOUNTING HOLE SPAC ING=12.5mm BOARD )
1d' !o-
°...
A
I"l
til 200
..... 10
H
~ V
-
0
z
H
<r:
1 / 100
-
10-1 o
f.-"
o 25 50 75 100 125 150 175 10-{l 10 2 10-1 1 10 100
AMBIENT TEMPERATURE Ta Cc) PULSE WIDTH t (sec)
TOSHIBA CORPORATION
-287 -
TOSHIBA SEMICONDUCTOR TOSHIBA DIODE
TECHNICAL DATA IN4148
SILICON EPITAXIAL PLANAR TYPE
Unit in mm
HIGH VOLTAGE, ULTRA HIGH SPEED
FEATURES:
Low Forward Voltage
S~1ITCHING
: VF=1. 2V (Max.)
APPLICATIONS.
ID!
[II
Small Total Capacitance : CT=3pF (Max.) I '":.
0
Fast Reverse Recovery Time : trr=4ns (tlax. ) 00.5

''""
~
~
~
r1AXIMUt1 RATINGS (Ta=250C) CATHODE MARK

r;- ~ "
Maximum (Peak) 00.5 ~
Reverse Voltage VRM 100 V ~
Reverse Voltage 75 V '"'"
Maximum (Peak)
VR
IFM 500 rnA
1
Forward Current J EDEC DO 35
Average Forward Current 10 200 rnA EIAJ SC-40
Surge Current (1 sec) 700 rnA TOSHIBA 1-2Al A

IFSM
Power Dissipation P 500 mW Weight : 0.14g
Junction Temperature T; 175 °c

Forward Voltage VF(l) IF=lOrnA - 0.75 1.0 V

VF(2) IF=lOOmA - 0.95 1.2 V
Reverse Current IR(l) VR=20V - - 25 nA

IR(2) VR=75V - - 0.1 /LA
Total Capacitance CT VR=O, f=lMHz - 1.5 3.0 pF
Reverse Recovery Time VR=6V, IF=lOrnA - 2.0 4.0 ns

trr
RL =1000 (Fig. )
-288-
SEMICONDUCTOR
TOSHIBA IN4148
TECHNICAL DATA
Fig. trr TEST CIRCUIT OUTPUT WAVEFORM
IN~l]0RMf~"'I~ '·~'1 o,~w, o--~~----~~---
-6V U
50ns
R - VR
3D a
10 0
50
,
'~ ~ I"
--- Ta ;50"(;
125
---
---
~ 3D
// // 100
'II. 'I I 1/
H
'" 10 !J 'II, II. 'I 75
~
5 .... ~
3 I I
I I /I I I 25
'j 'j / II I I a .......... a
./
0.5
0.3
~ ~/5/$111 fir 1
,/
0.1
0.2
IV III III IJ
0.4 0.6 0.8 l.0
FORWARD VOLTAGE VF (V) 1
10 a 25 50 75 100 125
REH~SE VOLTAGE VR (V)
P - Ta
80 0
"" 60 a
z
o
...
" """ ""
H
S
co
40 0
OJ
H
'"
"" 20 0
r:: l'..
~
0 ~
o 50 100 150 200 250
AMBIENT TEMPERATURE Ta (~)
TOSHISA CORPORATION
-289-
TOSHIBA DIODE
TOSHIBA SEMICONDUCTOR IN4149
Unit in mm
HIGH VOLTAGE, ULTRA HIGH SPEED SHITCHING APPLICATIONS.
FEATURES:
~~ 's.
Low Forward Voltage : VF= 1. 2V (Max.)
Small To tal Capacitance : CT= 2pF (Max.) ,,;
H
::!I
Fast Reverse Recovery Time : trr=4ns (Max. ) 0
Hermetically Sealded Miniature Glass Package. "''"
><
;i
CATHODE MARK /::; - '"
'"
CHARACTERISTIC SYMBOL RATING UNIT ¢o.5
,,;
H
::!I
Maximum (Peak) Reverse Voltage VRM 100 V 0
Reverse Voltage VR 75 V '""'

JEDEC DO-35
Average Forward Current 10 150 rnA EIAJ 8C-40
Surge Current (ltts) IFSM 2 A TOSHIBA 1-2AIA
Storage Temperature Range Tstg -65 - 200 ·C

Forward Voltage VF(l) IF=lOrnA - 0.75 1.0 V

VF(2) IF=lOOrnA, t=lOms - 0.95 1.2 V
IR(l) VR=20V - - 25 nA
Reverse Current IR(2) VR=20V, Ta=150·C - - 50 ttA
IR(3) VR=75V - - 5 ttA

Total Capacitance CT VR=O, f=IMHz - 0.9 2.0 pF
Reverse Recovery Time VR=6V, IF=lOrnA - 2.0 4.0 ns

trr
RL=loon, Irr=lrnA
products. No responsibility is assumed by TOSHIBA for any infringements of patents o~ other
-290-
SEMICONDUCTOR
TOSHIBA IN4149
TECHNICAL OAT A
1000 104
TYPICAL CHAR. Ta 25"C
<-
13
100
t lOms
/' <- lfi3
~
"
H
'" 1/
~
E-< 10 102
z.,
::l
~ f=r-.,o,-
=~
~E=' .V,t::
0/.; .,z
E-<
::l
TYPICAL
''-'<=>" 1
~
1/'" 10
- ","
.,'"'"ro
~ 0.1 V 1
I><
0
.,>I><fll
'" 0.01
o 0.2 0.4 0.6 0.8 1.0 1.2 L4 1.6 40 60 80 100
1.50 -3.5
IIIII Ta= 25'C p
IIIII f = 1MHz 0:a
"''' - 3.0
IIIII E-<~
'-'
E-<
.,,,,
Z -2.5
.......
., WO TYPICAL H ...
'"~ - 2.0
1'1'.1>
:Z-O<'!.l;
'"z
;; 0.75 .,.,
'" r--.
H g~-1.5
'"0:: 0.50 "H E-<
«: !5 §; -LO
'" E-<
«:<=>
1><1><
:;j 0.25
E-<
o ~ ~ -0.5
E-<
"0
E-< '" 0
1 10. 100 0.01 0.1 1 10 100
rth - t
IRe Temp. ) / IRe 25 'c) - Ta
VR=75.V
., MAXIMUM TRANSIENT
1rJ3 '"Z THERMAL RESISTANCE
p
:<,.c...V '"
E-<
:';
(MOUNTING ON 1.6mm GLASS EPOXY PC
'"
0/ ",-,>">
ro 300
MOUNTING HOLE SPACING=12.5mmBOARD)
0
1d' .,~
1><,.
E-<
.,
<=>
H"
~p
;:,~
;::: 10 fll 200

H
'"E-< '.,"
~ E-<
.,
~
--
Z
0
z 1 V H
OJ
100
....
~ Z
'"
I><
E-<
o
25 50 75 100 125 150 175 10-<3 10 - 2 10 1 10 100
AMBIENT TEMPERATURE Ta eC) PULSE WIDTH t (sec)
TOSHIBA CORPORATION
-291-
SEMICONDUCTOR TOSHIBA DIODE
TOSHIBA lN4150
TECHNICAL DATA
SILICON EPITAXIAL PLANAR
TENTATIVE Unit in mm
HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. @ I~
z·
....
.•
..
0
,....
MAXIMUM RATINGS (Ta-2S·C)
CHARACTERISTIC SYMBOL RATING UNIT i
~
Maximum (Peak) Reverse Voltage
Reverse Voltage
VRM 7S V
CATHODE IlARK /
.... ~
VR SO V
Maximum (Peak) Forward Current IFM 600 mA .;
fla.:;
Average Forward Current 10 200 mA •os....
Surge Current (1 _8) IFSM 4 A ..
0
Power Dissipation P 500 mW

JEDEC 00-36
Junction Temperature Tj 200 ·C EIAJ SC-&O
Storage Temperature Range Ts_tg -6S- 200 ·C TOSHIBA 1-2AIA
Weight 0.14g
ELECTRICAL CHARACTERISTICS (Ta-2S·C)
VF(l) IF-lmA 0.S4 0.S8 0.62 V
VF(2) IF-lImA 0.66 0.70 0.74 V
Forward Voltage VF(3) IF-SImA 0.76 0.81 0.86 V
VF(4) IF-lOImA 0.82 0.87 0.92 V
VF(S) IF-201mA 0.87 0.94 1.00 V
Breakdown Voltage VBR IR-lOO_A 7S - - V
Reverse Current lR(1) VR-SOV - - 100 nA
lR(2) vi-sov, T.a-150·C - - 100 _A

Total Capacitance CT VR-O, f-!MHz - - 2.S pF
trr(l)
IF-IR-10 - 201mA
Irr-O.l IF
- - 4 ns
Reverse Recovery Time t rr (2)

IF-IR-200 - 401mA
Irr-O.l IF
- - 6 ns
trr(3)
IF-lImA, IR-lmA
Irr-O.lmA
- - 6 ns
The _information contained herein is presented only as a guide for the applications of our
rights of the third parties which may result from its use_ No license is granted by implication
TOSHIBA CORPORATION
or otherwise under any patent or patent rights of TOSHIBA or others_
-292-
TOSHIBA DIODE
TOSHIBA SEMICONDUCTOR lN4151. lN4152. lN4153
TENTATIVE Unit in mm
~~ ~
0
HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. oj
"::
S1
0
MAXIMUM RATINGS (Ta-2S·C)
''""
Maximum (Peak)
Reverse Voltage
lN41Sl/3
lN41S2
VRM
VRM
7S
40
V
V
..
~
Reverse Voltsge lN41Sl/3 VR SO V ~~
.
'"
CATHODE IIARK /
lN4lS2 VR 30 V
Maximum (Peak) Forward Current IFM 4S0 mA .;
¢0.5
Average Forward Current 10 ISO mA S1
0
Surge Current (1 ps) IFSM 2 A ''""

Power Dissipation P SOO mW
JEDEC DO 35
Junction Temperature Tj 200 i ·C EIAJ ST 4.0
Storage Temperature Range Tstg -6S- 200 ·C TOSHIBA 1-2AIA
Weight 0.14g
ELECTRICAL CHARACTERISTICS (Ta-2S·C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.UNIT
Breakdown Voltage lN4lSl/3 VBR(l) IR-SpA 7S - - V

lN41S2 VBR(2) IR-SpA 40 - - V
VF(l) IF-100pA 0.49 0.S2 O.SS V
VF(2) IF-2S0pA 0.S3 0.S6 0.S9 V
VF(J) IF-lmA 0.S9 0.63 0.67 V
Forward Voltage IN41S2/3
VF(4) IF-2mA 0.62 0.66 0.70 V
VF(S) IF-10mA 0.70 0.76 0.81 V
VF(6) IF-20mA 0.74 0.81 0.88 V
lN41S1 VF(7) IF-SOmA - - 1.00 V
lN41S2 IR(l) VR-30V - - SO nA
Reverse Current
IR(2) VR-30V, Ta-1S0·C - - SO pA
lN4lSl/3 IR(J) VR-SOV - - SO nA

IR(4) VR-SOV, Ta-1SO·C - - SO pA
Total Capacitance CT VR-O, f-lHHz - - 2 pF
Reverae Recovery Time trrCl) IF-IR-lOmA, Irr-lmA - - 4 ns

trr(2) IF-lOrnA, VR-6V,Irr-lmA - - 2 ns
~he information contained herein is presented only as a guide for the applications of our
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHISA CORPORATI·:JN
-293-
TOSHIBA DIODE
TOSHIBA SEMICONDUCTOR IN4154
Unit in mm
ULTRA HIGH SPEED SWITCHING APPLICATIONS.
FEATURES:
tEJ~ '&.
11
~
Low Forward Voltage : VF=1. OV (Max.)
,,;
H
Small Total Capacitance : CT=4pF (Max.) ::!I
0
Fast Reverse Recovery Time : t rr =2ns(Max.) '"""
~
~
::!I
MAXIMUM RATINGS (Ta=25 DC)

CATHODE MARK / - - ...""
CHARACTERISTIC SYMBOL RATING UNIT 910.5 "':

H
:>I
Maximum (peak) Reverse Voltage VRM 35 V 0
Reverse Voltage VR 25 V ""'"

JEDEC DO 35
Average Forward Current 10 150 rnA EIAJ 80-40
Surge Current (1 .as) IFSM 2 A TO£HIBA 1-2AIA

Junction Temperature Tj 200 DC
Storage Temperature Range Tstg -65- 200 DC
ELECTRICAL CHARACTERISTICS (Ta=25 DC)

Forward Voltage VF(l) IF=30mA - 1.0 V

VF(2) IF=lOOmA - 1.2 V
IR(2) VR=25V, Ta=150 DC - - 100 .aA

Total Capacitance CT VR=O, f=lMHz - 4.0 pF
VR=6V, IF=lOmA
Reverse Recovery Time trr
RL- lOOO
- 2.0 ns
-294-
SEMICONDUCTOR
TOSHIBA IN4154
TECHNICAL DATA
1000
TYPICAL CHARA.
103 Ta-25"C
'j 100
t 10 rna
/'
."
~
H
'" ~ lif
10 II
z'"' ~ ~f'?VE '01"'
z TYPICAL
"'/~ ","'If?
01
~ f= ~
~
10
~
~-
to
I/"t
" '-.'"
D
~ t
~
0
0.1
'" 10 20 30 40
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
REVERSE VOLTAGE VR (v)
FORWARD VOLTAGE VF (V)
- 3.5
1.50 I I
-;;;
II III Ta = 25"C - 3.0 JI
" 1.25
II III f=lMHz J
TYPICAL
- 2.5
tSl'P1C4.l,
"'"' 1.00
01
r-- - 2.0
"
:;, 0.75 -1.5 r--..
'"'
H
(0
P': 0.50 -1.0
."
"
H 0.2 5 -0.5
"'"'
o a
'"' , 30
0.01 0.1 1 100
FORWARD CURRENT
REVERSE VOLTAGE
rth - t
MAXIMUM TRANSIENT
VR-25V I I V THERMAL RESISTANCE
103
MOUNTING ON 1.6 men GI"ASS EPOXY
~ ~\> "'C BOARD
'0 :<,,0
MOUNTING HOLE SPACING = 12.5mm
'"
0
102 <~ 300
'"'
'"
01
20a
'"
H
H
10
."
:;;
'z"
0
V V
-
100
f0-
~
I a
r--
25 50 75 .1.25 -1.50 175 10 3 10 2 10 1 10 100
AMBIENT TEMPERATURE Ta eC) PULSE WIDTH t (sec)
TOSHIBA CORPORATION
-295-
TOSHIBA DIODE
SEMICONDUCTOR IN4446, IN4447, IN4448, IN4449
TOSHIBA
Unit in mm
~~
FEATURES: 'a
~
Low Forward Voltage : VF= 1. OV (Max.)
Small Total Capacitance : CT=4pF (Max.) "::Ii
H
Fast Reverse Recovery Time : t r r=4ns (Max.) 0
Hermetically Sealded Miniature Glass Package. ''""

,...J

":.l
'"...
CHARACTERISTIC SYMBOL RATING UNIT CATHODE MARK J'~ ~
Maximum (Peak) Reverse Voltage VRM 100 V
Reverse Voltage VR 75 V ¢U5
2:
H
::Ii
Maximum (Peak) Forward Current IFM 450 mA 0
Average Forward Current 10 150 mA ''""

Surge Current (Ips) ~FSM 2 A
JEDEC DO-35
Power Dissipation P 500 mW EIA;)" SC 40
Junction Temperature Tj 200 ·C TOSHIBA 1-2AIA
Storage Temperature Range Tstg -65 - 200 ·C Weight: 0.14g

IN4446/7 VF(l) IF=20mA - 0.79 1.0 V
VF(2) IF=5mA 0.62 0.67 0.72 V
lN4448
Forward Voltage VF(3) IF=lOOmA, t=lOms - 0.9 1.0 V
VF(4) IF=5mA 0.63 0.68 0.73 V
lN4449
VF(5) IF=30mA - 0.8 1.0 V
IR(l) VR=20V - - 25 nA
Reverse Current IR(2) VR=20V, Ta=150·C - - 50 pA
IR(3) VR=75V - - 5 IlA
Total Capacitance lN4{146/8 CT(l) VR=O, f=lMHz - 0.9 4.0 pF

lN4447/9 CT(2) VR=O, f=lMHz - 0.9 2.0 pF
IF=lOmA, VR=6V,
RL=loon, Irr=lmA
- 2 4 ns
TOSHIBA CORPORATION
-296-
SEMICONDUCTOR
TOSHIBA IN4446. IN4447. IN4448. IN4449
TECHNICAL DATA
1000 104
TYPICAL CHAR. Ta 25"(;
<-e 100
t ~Oms
/1/
~
<
lril
"
.!' 0::
H
...z 10
...z 102
oV,c t: 0/ .,
01
gj
'" 1
§ ~
~ =c-='".,0r-
~
'I>
...,0/ 7' 01
gj 10
TYPICAL
~
0 II
<=> I- ~'" '"
0
i°
01
OJ
0.1 1
&1
:>
r;.. 01
0::
0.0~·~~0.~2~~o.L4~~0.~5~~0.~B~~1~.0~-1~.2~-L~4~~L5 40 50 BO 100
0T - VR
- 3.5
I IT!I ITIT""
150 ""--'T"'T'TTT'1rrrr---,-,n 1--.-,-------.
IIIII Ta= 25"(; !-'
~ 111IHt-'-t- f = IMl1z
1.25 f---t-I-ttttttl-+-t-tl+Ii tt 0:a
r;.." -3.0
... IIIII ... ~

o ~ r;.. -2.5
H ....
o
t"---
01 1'J:1'J:
o ~ -2.0 O~l
~ 0.75~~+1~~--t-t-H+H#--+-t-~~--+-H 0101
........
g~ -L5
H
o ...
~ Q.5°I-~~~~--~~+H*--+-t-HH~~+-H
01":>
o ...g;<<=>~ - LO
~ 0.251-~~~~--~~+H*--+-t-HH~~+-H &1 ei -0.5
°... n
... r;.. 0
0.01 0.1 1 10
1 10 100 100
MAXIMUM TRANSIENT
VR=75 V
THERMAL RESISTANCE
W
!-' :<,:::,'t:V (MOUNTING ON L5mm GLASS EPOXY PC )
on
,,4.,."< MOUNTING HOLE SPACING=12.5mmBOARD
'" lrl 300
°...
<=>
01
~ 10 200
..:>
;j
0:: ...
Z V
°z 1 V 01
H
100
-
...~
0:: I-
H
,.;
0
25 50 75 100 125 150 175 10-B 10-2 10-1 1 10 llX
AMBIENT TEMPERATURE Ta ("C) PULSE WIDTH t (sec)
TOSHIBA CORPORATION
-297-
TOSHIBA lN4606
TECHNICAL DATA
SILICON EPITAXIAL PLANAR
TENTATIVE Unit in nun
l~"
COMMUNICATION AND INDUSTRI.AL APPLICATIONS.
HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. @
,
"':
i
0
"
N
I
r-'" I-'-
,...~
'"' ' " '" /'1

V I
Maximum (Peak) Reverse Voltage VRM 85 i-'- .,;01
Reverse Voltage VR 70 V
Maximum (Peak) Forward Current hM 600 rnA I .
;dae :::
Average Forward Current 10 200 rnA '-- ~
Surge Current (1 I's) IFSM 4 A ~I• ~:: I

Power Dissipation P 500 mW '----1
J EDEC DO 35
Junction Temperature Tj 200 ·C EIAJ SC 40
Storage Temperature Range Tstg -65 - 200 ·C TOSHIBA 1-2AIA
l'el.ght 0.14g
CHARACTERISTIC SYMBOL TEST CONDITION ~!IN • TYP. ~IAX. L'NIT
Breakdown Voltage VBR IR=lOOI'A 85 - - V
VF(1) IF-IOOI'A 0.54 0.60 0.66 V

VF(Z) IF=lmA 0.65 0.71 0.77 V
VF(3) IF=l!AnA 0.74 0.80 0.86 V
Forward Voltage
VF(4) IF=10!AnA 0.79 0.86 0.92 V
VF(5) IF"'20!AnA 0.86 0.93 1.00 V
VF(6) IF=250mA - - 1.10 V
lR(1) VR=50V - - 100 nA
Reverse Current IR(2) VR=50V, Ta-100·C - - 25 p.A
IR(3) VR=70V - - 250 nA

Total Capacitance CT VR=O, i=L'1Hz - - 2.5 pF
trr (1) IF=lRalOmA, Irr-lmA - - 6 ns
IF-IR-10 -20OmA
Reverse Recovery Time trr (2)
Irr-O.lIF - - 4 ns
trr(3)
IF-IR-ZOO- 400mA
Irr-O.lIF
- - 6 ns
TOSHIBA CORPORATION
-298-
TOSHIBA RECTIFIER
SEMICONDUCTOR IN4001 - IN4007
TOSHIBA
TECHNICAL DATA SILICON DIFFUSED TYPE
GENERAL PURPOSE RECTIFIER APPLICATIONS. Unit in mm

FEATURES:
Average Forward Current : IF(AV)=lA (ffJ~ '0
oj
Repetitive Peak Reverse Voltage : VR..'1=SO -lOOOV
Small Epoxy Holded Package
m -
Insulated Case ! i
"'
0.
rtAXHUt RATIrlGS
CHARACTERISTIC
IN4001
IN4002
SYMBOL RATING
SO
100
UNIT CATHODE MARK
"- .• ".
d
-Ii
0
'"
...,,;
Peak ll.everse Voltage
(Tj up to l7S'C)
IN4003
lN4004 VRM
200
400 V .¢o.?5
...----t :I- .
<0
".
IN400S 600
IN4006 800
IN4007 1000
JEDEO DO 41
lN4001 100 EIAJ -
IN4002 200 TOSHIBA 3 - 3D1A
IN4003 300 Weight : 0.3g
Non-Repetitive Peak V
Reverse Voltage IN4004 VRSM 500
lN4005 750
lN4006 1000
IN4007 1200
Average Forward Current IF (AV) 1 A
Peak Surge Current A
Non-Repetitive Isurge 33(60Hz)
Storage Temperature Tstg -65 -175 ·C

CHARACTERISTIC SYMBOL TEST CONDITION MIN. MAX. UNIT
Peak Forward Voltage VF IF'"1.0A - 1.1 V
Repetitive Peak Reverse
C rrent IR VRM-Rated - - 10 fJA
Note 1. Soldering : 5mm is the minimum to be kept between case and soldering part.
2. Lead Bending : 5mm is the minimum to be kept between case and lead bending point.
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHISA CDRPORATION
-299-
SEMICONDUCTOR lN4001 - lN4007
TOSHIBA
TECHNICAL DATA
SURGE CURRENT CHARACTERISTICS

:3 0
~V MAXIMUM ALLOWABLE NON-REPETITIVE
~ SURGE CURRENT AT 5()'C JUNCTION
c lot TDIPERATURE
~
0'"-
s
.{If/~ --""'r-..
-
1/
1
~I /
~
:3
a 0 a4. aB va Le 2.0 2.4. 2.B 3 10 30 100
INsrANTANEOUS PORWARD VOLTAOZ Vp (V) NUMBER OP CYCLES AT eOHz SINE HALP WAVI
AVERAGE FORW~~D CURRENT

CHARACTERISTICS
2
I
RESISTIVE & INDUCTIVI LOAD
0
I I I I 't
CAPACITIVE LOAD"
\
,"
.\
\,;
t\\
o 4.0 80 12() 160 200

AloIBIENT TEIoIPERATURJI Ta (t)
i' UO
TOSHIBA CORPORATION
-300-
TOSHIBA RECTIFIER
SEMICONDUCTOR IN4001A - IN4007A
TOSHIBA
TENTATIVE
Unit in mm
GENERAL PURPOSE RECTIFIER APPLICATIONS
TOSHIBA RECTIFIER lN400lA series are designed for
automatic insertion.
type. ) Their leads dia is
(Suffix "A" means aut-insertion
~O.6mm and they are obtained
tEJi
in radial or axial taping form. .;
...
.,
:0;
FEATURES:
'"
"mom*u~
Average Forward Current : IF(AV)=1. OA
'"
d
-Ii
Repetitive Peak Reverse Voltage : Vrur-SO -lOOOV 0
Plastic Mold Type. '"

z·
...
~ I- .,
:0;
MAXIMUM RATINGS I '"

lN400lA SO
JEDEC DO-41
lN4002A 100 EIAJ -
Peak Reverse Voltage IN4003A 200 TOSHIBA 3-3EIA
IN4004A VRM 400 V Weight : 0.22Sg
(Tj up to 17S·C)
IN400SA 600
IN4006A 800
IN4007A 1000
Average Forward Current
(See Note 1) IF(AV) 1 A
30(SOHz)
Peak Surge Current Isurge A
33.(60Hz)
Storage Temperature Tstg -40-17S ·C
Junction Temperature Tj -40 -17S ·C

Peak Forward Voltage VFM Im=1.0A - 1.2 V
Current IRM Vrur-Rated - 10 /JA
Note 1 Resistive or inductive load, SOHz single phase half wave. Lead wire length
lOmmx 5 x 5mm 2 solder land, Ta=55·C
- 301-
SEMICONDUCTOR
TOSHIBA lN4001A - lN4007A
TECHNICAL DATA
Ta MAX - IF(AV)
0
I I I RESISTIVE AND
~ ~
I-r I I INDUCTIVE LOAD
1
01S ~ ~~!~J)
6,%!".t.tr.t
.?Ij~ 6'0 ~.t'~ I
t- {~ ~.e 111'~
.., 'I>
01-
IL Vi-,.t I- t - 'Jr ~ .to
.C.o/: <1QJ) ~
1 "'o~
<$>~~~
0
o5 I'
;. 11", "
o 0
<l>o/:<$>
I 4'<t..jl
o1
04
II
08 L2 L6 2.0 2.4 2.8 3.2
0 I
o 02 04 06 08 LO L2 L4
INSTANTANEOUS FORWARD VOLTAGE VF (V) AVERAGE FORWARD CURRENT IF(AV) (A)
TRANSIENT THERMAL IMPEDANCE SURGE FORWARD CURRENT
(JUNCTION TO AMBIENT) (NON-REPETITIVE)
50
Tj =50"(;
r\..
I"'-"'-6 OHz
~
50
"'f::::
f=::==o...
0
0
1 10 30 100
TIME t (sec) NUMBER OF CYCLES AT 50Hz AND 60Hz
PF(AV) IF(AV)
2.0
.L.
j./
V
V
,/
L
V
".
02 U4 u6 C~ ~.O .2 .4
AVERAGE FORWARD CURRENT IF(AV) (A)
TOBHIBA CORPORATION
- 302-
SEMICONDUCTOR IN4001A - IN4007A
TOSHIBA
TECHNICAL DATA
(a) Axial Lead Component Type (b) Axial Lead Component Type
(TPAl) Reel (TPA3) .•. Winding
(TPA2) ••• Winding
6.0±o,5 fiO±o.5
+2 +1.5
52-1 26-0
~~a&ECa5~~~-,~ ~
d d
-H fj
o
~~~emEe~~~-==a__~i-~~ t1=o,jIm:!!555j- +I=""",je-.JI-----I ~
L6MAX.
(L1-L2=O±o.S) ( L1- L2 = o±o.S )
(c) Radial Lead Component Type (d) Radial Lead Component Type
(TPBl) ... Reel (TPB2) ... Winding
O±2 0±2
min
..W
.. II:
~
r' .,
I
r I
,,
I
~
, ,
I I
I I
'I:
.<
ii ~
... d ~
... d
+1 +1
...'" ...'"
3.85±O,7
+0.8
5-0.2
12.7±o.3
TOSHIBA CORPORATION
- 303-
SEMICONDUCTOR TOSHIBA RECTIFIER
TOSHIBA IN4002-B - IN4007-B
TECHNICAL DATA
SILICON DIFFUSED TYPE
(TENTATIVE)
GENERAL PURPOSE RECTIFIER APPLICATIONS.

Unit in rnm
FEATURES:
· Average Forward Current

· Repetitive Peak Reverse Voltage: VRR}I=lOO'" 1000V
: IF (AV)=1. OA
$-JI
· Plastic Mold Type. -
2<
~
:s
, '0
."
~""W-
CATHODE
MAXIMUM RATINGS
'.:J
CHARACTERISTIC COLOR SYMBOL RATING ei
CODE UNIT
lN4002-B White 100
Repetitive ? -;.6 z
Peak lN4004-B Blue 400 ....
V
Reverse lN4005-B Yellow
VRR.'1
600 '"
'0
"_l
Voltage
lN4007-B Green 1000 -
Average Forward Current IF (AV) 1.0 A
(Ta=25°C) J H:DEC
Peak Surge Current Non- Isurge 33 (60Hz) A 6: rAJ -
Repetitive T0SfU3A
Junction Temperature Tj -65'" 175 °c Height: 0.137g

CHARACTERISTIC SYMBOL TEST CONDITION NIN. ~!AX. UNIT
Peak Fon-lard Voltage VFM I FN=1.0A - 1.1 V
Current
IRR.i'1 VRRM=Rated - 10 ~A
-304-
SEMICONDUCTOR
TOSHIBA TECHNICAL DATA LN4002-B - IN4007-B
(TENTATrVE)
Til MAX - rF(AV)

:3 0
0 R!SISTIVl!l AND
~ ~ r- - I . I
INDUCTIVE LOAD
10
01 <t.fD
0::::
~ i'- -1-01 •
~'"' 5
"''''<1'''~'''
~~ 3 -.~r4~ '~<I'O~C<t.\ro I
...... ,~
0 r"- D~~ 7'",
",'"
=>
o 1
v V..'"' 1/
.....
~
C
.f-l'D
10
<'I",
..
!:.J
-< a. 5 ["-.,
"-
..'"
-<
OJ
a. 3
II
'".... a. 1
0.4. 0.8 L2 1.6 2.0 2.4 2.8 3.2 0
o 0.2 0.4. 0.6 o.a
INSTANTANEOUS FORWARD VOLTAGE VF (V) AVERAGE FORWARD CUR!tE.tn
TRANSIENT THER~~AL IM"PEDANCE SURGE FORWARD CURRENT

(.TUSCTION TO A~!BIENT) (NON-REPETITIVE)
10000_ _ 50
Tj s~O'C
['...
1,",,6 OHz
~
50 i""" t'~
f"=:::=.. I !
U
0.1 1000
U
0.01 10 100 3 10 30 100
TIME: t (soc) NUl.tB1!!R OF CYCLES AT 50Hz AND 60Hz
2.0
I I V
V
1/
V I
~
A"
V
~ I
1.l.2 y.~ \}.ti G.d 1.J 1.~ d
-305-
TECHNICAL DATA lN4002-B - lN4007-B
(TENTATtVE)
(a) Axial Lead Component Type

(1PA3) •.. AMMO PAC\(
II 6.0:ta.S
n
r--1'_L=I-1 ~
j.2 MIN
( LI-La=O±US)
(c) Radial Lead Component Type

CTf8S') ... At1MO PAC~
6n~
i I .
.
.
~.
,Ir : .I'
I.
12.71:,.3 I
or otherwise under any patent or patent rights of TOSHIBA or others. TDBHIBA CORPORATION
-306-
TOSHIBA RECTIFIER
TOSHIBA SEMICONDUCTOR IN5059,lN5060,lN506l,lN5062
(TENTAT IVE)

Unit in nnn
FEATURES:
Average Forward Current
Repetitive Peak Reverse Voltage: VR1u-I=200'" 800V

: I F (AV)=1.0A
~
. Glass Passivated Rectifier • ~Jh "'075
Z
;;;
<0
111 '"
t
r~AXH~U~1 RATINGS
'"'00'" ~ U) "
~
"l
'"
CHARACTERISTIC SYMBOL RATING UNIT ¢c..75 III

l~
~
~
lN5059 200
Repetitive Peak lN5060 400
~~-
VRRM V
Reverse Voltage lN506l 600 l. ANODE
'. C.:\THODE
lN5062 800
JEDEG
Average Forward Current IF (AV) 1.0 A
EIAJ
Peak One Cycle Surge For- 45 (50Hz) TOSflIBA 3 - :j ~':"l ,\.
I FSM A
>lard Current (Non-Repetitive 50 (60Hz) l.]eight: 0.45g
Junction Temperature Tj -65'" 175 °c
Storage.Temperature Range Tstg -65'" 175 °c
ELECTRICAL CH~RACTERISTICS
CHARACTERISTIC SY~!BOL TEST CONDITION NIN. NAX. U~IT
Peak Forward Voltage VFH IFH-1.0A - 1.0 V

Current IRIU'I VRRN=Rated - 5.0 wA
Note 1. Soldering: 5mm is the minimum to be kept between case and soldering part.
2. Lead Bending: 5mm is the minimum to be kept from the case "hen bend the
lead "ire.
The information contained herein is presented only as a guide for the applications of OUf
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA CClRPORATION
- 307-
TOSHIBA SEMICONDUCTOR IN5059,lN5060,lN5061,lN5062
TECHNICAL DATA
(TENTATIVE)
PF(AV) - IF(AV)
100
50
30 DC
..... po
10 ~
~ 1¢
V
f= ~'"
3¢'-. V
gOJ ...... I- f::'""
~I t7" 6¢~ V
..'"
Z
4: ...'>
~V
..
:z;
4:
1
'"
~'"
OJ
Z
~
Cl~
Cl3
o.~ ClS 1.2 1.6 2.0 2.4 2.8 3.2
>
4:
a IL
0 0.6 1.0 3.2
INSTANTANEOUS FORWARD VOLTAGE v F (V) AVERAGE FORWARD Ct:RRENT IF(AV) (A)
Ta MAX - IF(AV) Ta /lAX - IF(AV)
SINGLE PHASE HALF WAVE

RESISTIVE LOAD
RESISTIVE LOAD
INFINITE HEAT SINK LEAD WIRE LENGTH: 10mm
LEAD WIRE LENGTH
10mm
t-
~
PRINTED CIRCUIT BOARD AREA
O~ :,..... 1/ 2OlIlll1
~ ~ r--.. V 1 / 1/3omm
0
~ 1'.. V 1000 mm:
1\\~ KV V ~ ~ VV' 300mIn 2
~ f'... k V NO HEAT SINK

~ f"~ V 100.".
\~ r-< r--.. LEAD WIRE

LENGTH 0 . . . l'\ VC 7 2
1I'.lD.
(3mm¢)
1\ ~ ~I'\
"
V
1.\1'\ V 30mm 0
V
\ 1\' 1--201lllD NO HEAT SINK ..... .....
10=
o IV
. o ~
o 0.8 1.2 1.0 o 0.4 0.8 1.2 1.6 2.0 2.4
AVutAGE FORWARD CURRENT I F( AV) (A) AVERAGE FORWARD CURREST IF(AV) (A)
-308-
SEMICONDUCTOR
TOSHIBA IN5059,lN5060,lN5061,lN5062
TECHNICAL DATA
(TENTAtIVE)
Ta MAX - [!'( AV) Rth(J-a) - L
~r-~'-------------~---------'
t:INOLE: FHA::!: HALF W,W!:
.
.., I
!60
~
No I
l'--~e~7'
g l~
$
It,'ir
0:
---t:-
se
/ . ~ 'I'
....-:;'
/i,.'to't
... :l.
40 I-- p.-::-\.\'
~'t
...
\ I
~
o I
o ('.4 c.s 1.2 1.15 2.0 2.4 Il 10 20 31l 40 -
00 -.
cO
LEAD ~IRE: LE~OTH L (~)
St:?.OE FC!r.v;"~D CU~!I\E!j!

(NQ~-REPETIT!VS)
I I " II, I !I : Tj a:u'(

0
I
I i I i I,; I ! I
\ 1 i I ill!; I
I i II i I
a\.\. I i I ill, I i I iT !
'\.\l I II!II I ill I
~ I! i d I II'; I
II! I
,II~I!I:,
,!~
I
! I! ~
, (101(" ' I
i ! I ii"; ~I ! I!: I
I' I I! I jl: 110 I 1 'i'" il! I
I ! ill I !: I I iii I
o I I I i III! I I ill', .. I
1 - lJ 30 eJ •• 0 --
:':':~!3E:t OF CY~LES AT ~OH.:: AND 150Hz
-309-
SEMICONDUCTOR TOSHIBA RECTIFIER
TOSHIBA IN5624.1N5625.1N5626.1N5627
TECHNICAL DATA
(TENTATIVE)

Unit in lIm
FEATURES:
~3
• Average Forward Current ; IF(AV)=3.ID:A
· Repetitive Peak lIleverse Voltage: VRRM=200", 8'OOV
· Passivated Rectifier.
Gla~s
~h--:
1Hz:; I ~
t I. N
~,,,~_L~
x
~
Ol
"'
!
MAXIMUM RI'\TINGS
CRA RACTERISTIC SYMBOL RATING UNIT "'1.2-5. It i.
~
z
INS62~' 200
, l
'"
~
I'
Repeltitive .Peak lNS62S 400

V"RRM V
Reve:trse Volt:age INS626 600 1. ANODE
:;. CATHODE
lN5627 BOO
Avenage Forward Current IF'(A'll~ i 3.0 A JEDEC -
EIA.! -
):l\rak One Cycle S~ge For- 100; (50Hz) -
, ~SM A TOSHIBA :3 'telA
\.;lard Current(No~Repetitive) i no; (60Hz) l.eight: 1.lg
Junct~n Temperat~ 111 -llt5", 175 °c
Storage Temperatu~ Range 'CS;ttg· -~5'" 175 °c
:
ELECT.RICAL CHARACTEIIUSTICS (Ta=2S'"C)

CHARACTERISTIC
-- t SYMBOL TEST CONll'ITION HAX.
NIN. UNIT
Peak Forward Voltage
- VFM I FM=3.0:.\\. - 1.0 V
-
IRRM VRRM=Rated - 5.0 I1A
Current
Note 1. Solderi.ng: SlI'Irn is the minimum to be. kept between case and soldering part.
2. Leadt Bending: 51D11l is the minimum to be kept from the case t,hen bend the
lead "ire.
The informatioll contained herein IS presented only as a guide for the applications of our
rights of the third pIlrties which may result from its use. No license is granted by implication
- 310-
SEMICONDUCTOR
TOSHIBA IN5624.1N5625.1N5626.1N5627
TECHNICAL DATA
(TENTATIVE)
PF(AV) - IF(AV)
50
4. 8
30 ..... ~C - fo- f-
~ iI' 4.0
1¢
0 / /' 2
3¢ V
5 (/
1/;..;
3 ,th " OJ r- r- - O¢(AI
//
/ /.3 Ib I/'
~
0.5 ~V
0.3 ~
o 0.4 0.8 1.2 1.6 2.0 2.4 o.S 1.6 2.4 :12 4.0 4.8 -
5.0
INSTANTANEOUS FORWARD VOLTAGE "F (V) AVERAGE FORWARD CURRENT IF(AV) (A)
Ta MAX - IF(AV) Ta MAX - IF(AV)

roo 200
-
SINGLE PHASE HALF WAVE SINGLE PHASE HALF WAVE
RESISTIVE LOAD
~~ RESISTIVE LOAD
~ LEAD WIRE LEtlGTH : 10 mID
~ E==:: ~ ....... INFINITE HEAT SINK
t'-..
LEAD WIRE LENGTH "- ~~ ,
~t--- PRINTED CIF.CUIT
~ ~ "- r-... !'... BOARD' AREA
t'. I-... i"""- ~ ~
...'\:
"" " lOmm '\. lOOOa:m 2
NO HEAT \ ~ 1'-.: V 20mm '- "-<!: ... k
300 m:n 2
100mm 2
SINK 30mm
\ r\."\
m
..... ~ ~ "\ '< I',
LEAD WIRE
LENGTH ,./ ~ \.
"- I"
30mm"
20mm ~ "\ \ 7mm 2 (3=¢) /' "\
10mm - f-'"
0.6 1.2 1.S 2.4 :10 :l6 0.6 1.2 1.S 2." :10 :16
AVERAGE FORWARD CURRENT IF(AV) (A) AVERA(lE FORWARD CURRENT IF(AV) (A)
SURGE FORWp~D CURRENT

Ta MAX - IF( AV) (NON-REFET ITIVE)
200 200
;-- Tj=50·C
oS ~ RESISTIVE LOAD
~EAD WIRE LENGTH: 20cm
~~
" ..... ~
PRINTED CIRCUIT
~OA!\D AREA
..... i': ~ /.1000::1m22
"" ./ 300mm "
~
~
"
"' "
l'<: tx..100ml:l2
'< l" ~OHZ
7:nm Z (3mm¢)--'" "\ 50 ~ 1-1-

o "\
o 0.6 1.2 1.8 2.4 3.0 " 3 5 10 30 50 100
AVERAGE FORWARD CUI'.REtl! Il"(AV) (A) NUMBER OF CYCLES AT 50Hz AND 60Hz
- 311-
TOSHIBA SEMICONDUCTOR TOSHIBA THYRISTOR
TECHNICAL DATA Cl06A, Cl06B, Cl06D, Cl06M

SILICON PLANAR TYPE
LOW POWER SWITCHING AND CONTROL APPLICATIONS. Unit in nun

lo.O±o.5 ¢!3.2±o.l
FEATURES:
Repetitive Peak Off-State Voltage : VDRM } =100-600V
Repetitive Peak Reverse Voltage : VRRM -¥ '"
'"d
+I
0
d
rl
J
I ~j ~ '" ~Il
Average On-State Current : IT(AV)=2.sA
Plastic Mold Type oj
L25
'"
d
+I
~, 0
t1
rl
MAXIMUM RATINGS
.~.
1
Repetitive Peak C106A 100 d ." d
+I
Off-State Voltage 123 '" l3
and Repetitive Peak C106B VDRM 200 2
V '" .j.
Reverse Voltage C106D VRRM 400 L CATHODE ~

(RGK-lkn) a ANODE (HEAT SINK)
C106M 600
!3. GATE
Non-Repeti tive Peak C106A 150
Reverse Voltage J"EDEC -
C106B 300 EIAJ" -
(Non-Repetitive <sms, VRSM V
RGK=lkn, C106D 500 TOSHIBA 13-10AIA
Tj=0-110·C) Weight : 1.sg
C106M 720
Average On-State Current
IT(AV) 2.5 A
(Half Sine Waveform Tc=32 ·C)
Note: Should be used with gate
R.M.S On-State Current IT(RMS) 4 A resistance as follows.
Peak One Cycle Surge On-State l8.2(sOHz)
Current (Non-Repetitive) ITSM A
I 2 t Limit Value (t=l-lOms)

Peak Gate Power Dissipation
Average Gate Power Dissipation
I2t
PGM
PG(AV)
20(60Hz)
1.6
0.5
0.1
A2 s
W
W
GATE
:rf0O' RaK =1 kO OR LESS
CATHODE
Peak Forward Gate Voltage VFGM 5 V
Peak Reverse Gate Voltage VRGM -6 V
Peak Forward Gate Current IGM 200 IDA
Junction Temperature Tj -40-110 ·C
The information contained herein is presented only as a guide for the applications of our EGD-Cl06A-l
-312-
SEMICONDUCTOR
TOSHIBA Cl06A. Cl06S. Cl06D. Cl06M
TECHNICAL DATA

Repetitive Peak Off-State VDRM=VRRM=Rated
Current and Repetitive Peak IDRM - 10 100 IlA
Reverse Current IRRM Tj=llO·C. RGK=lkn
Peak On-State Voltage VTM ITM=4A - 1.8 2.2 V

VD=6V, RL=loon 0.4 0.5 0.8
Gate Trigger Voltage VGT V
RGK=lkn I
Ta=-40·C 0.5 0.7 1.0
Gate Trigger Current IGT

VD=6V, RL=loon - 30 200
IlA
RGK=lkn I
Ta=-40·C - 75 500
VD=Rated, RcK=lkn
Gate Non-Trigger Voltage VGD
Tc=llO·C
0.2 - - V
Critical Rate of Rise of VDRM=Rated, RGK=lkn 15

Off-State Voltage
dv/dt - V/Ils
Tc=llO·C *10
Exponential Rise
0.3 1.0 3.0
Holding Current IH
VD=12V I Ta=-40·C 0.4 2.0 6.0 rnA
RGK=lkn
ITa=llO·C 0.14 0.6 2.0
VD=12V 0.3 1.5 4.0
Latching Current IL rnA
RGK=lkn ITa=-40·C 0.4 3.0 8.0
dl/dt<lOA/lls
-di/dt<SA/lls
IT=lA, f=60Hz
Turn-Off Time tq VD=Rated, VR ;;;;lSV - 40 100 liS
dv/dt=SV/lls, VRRM=Rated
Ta=110·C, Gate Bias=OV
lOon
Thermal Resistance Rth(j-c) Junction to Case - - 10 ·C/W
* C106M
EGD-CI06A-2
TOSHIBA CORPORATION
- 313-
SEMICONDUCTOR
TOSHIBA CI06~ Cl06e. CI06~ CI06M
TECHNICAL DATA
SURGE ON-STATE CURRENT

3... (NON-REPETITIVE)
. 20
10 ""
20
1/
"
1
II ""-
0.5 ~r=
f.)
...,...,
"
0
f=f=
'"'"
0.3 f--f-- - I I
f-+-
0.1
o
I I
0.5 LO 1.5 2.0 2.5 3.0 3.5 4.0 3 5 10 30 50 100 300
INSTANTANEOUS ON-STATE VOLTAGE VT(V) NUMBER OF OYOLI!lS
TRANSIENT THERMAL IMPEDANCE

PT(AV) - IT(AV) ("UNCTION TO CASE)
200
DO /
a = 180 0
/
/ J HALF SINE
WAVI!lFORM
1.1:: v
V f\.
O'W!JlSO·
~V OONDUOTION
~
ANGLI!l
v~
1 2 3 4 5 6 3 5 10 30 50 100 300500 1000
AVERAGI!l ON-STATE OURRENT IT(AV) (A) TIME t (ms)
Tc MAX - IT(AV)
120
HALF SINE
,
WAVEFORM
~
i,,\
\.,
f\.
QOWl8O°
OONDUOTION
ANGLE
\
\
1\ 1\
a =180· 00\
1 2 3 4 5 6
AVERAGE ON-STATE OURRENT IT(AV) (A)
EGD-C106A-3
TOSHIBA CORPORATION
-314-
SEMICONDUCTOR TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR
TOSHIBA T23238, T2323D, T2323M
TECHNICAL DATA
AC POWER CONTROL APPLICATIONS Unit in mm

1(10+0.5 ,03.2±U1
FEATURES:
Repetitive Peak Off-State Voltage : VDRM=200-600V
R.M.S On-State Current : IT(RMS)=2.5A ¥ "' '"
d
0
d
H
'" ~
I~l ~
rl
~I~
4 Trigger Mode Guarantee
High Commutating (dv/dt)
~. '"<Xl
d .. "'
t'J
High Sensitivity Type
1.25 I
"'
d
+1
0
~ t'J
rl
~ 3~
(0 10
MAXIMUM RATINGS d .'. d
+1
1 2 .'3
CHARACTERISTIC SYMBOL RATING UNIT LI)
1
lI) "'"
r-
T2323B 200 '.-1
Repetitive Peak 1. T1
T2323D VDRM 400 V 2. T2 (HEAT SINK)
Off-State Voltage il. GATE
T2323M 600
JEDEC -
R.M.S On-State Current EIAJ -
IT(RMS) 2.5 A
(Full Sine Waveform Tc=65 'C) TOSHIBA 13-10A1B
Peak One Cycle Surge On-State 23.5(50Hz) Weight : 1. 5g
ITSM A
Current (Non-R~petitive)
25(60Hz)
I 2t Limit Value (t=1-2Oms) r2t 3.4 A2s
Peak Gate Power Dissipation PGM 10 W
Average Gate Power Dissipation PG(AV) 0.1 W
Peak Gate Voltage VGM 10 V
Peak Gate Currl'nt IGM 1 A
Junction Temperature Tj -40-100 'c
Storage Temperature Range Tstg -40-150 'c
- 315-
SEMICONDUCTOR
TOSHIBA T23238. T23230. T2323M
TECHNICAL DATA

Repetitive Peak Off-State
Current IDRM VDRM=Rated VDRM' Tj-IOO·C - 0.75 rnA
I T2(+} , Gate(+} - 2.2
Gate Trigger Voltage

IT
VGT
T2(+} , Gate(-} - 2.2
V
m T2(-}, Gate(-} - 2.2
VD=12V
III T2(-}, Gate(+} - 2.2
RL=300
I T2(+}, Gate(+} - 25
Gate Trigger Current

IT
IGT
T2(+}, Gate(-} - 40
rnA
m T2(-}, Gate(-} - 25
III T2(-} , Gate(+} - 40
Peak On-State Voltage VTM ITM=IOA - 2.6 V
Gate Non-Trigger Voltage VGD VD=Rated VDRM' Tc=IOO·C O.lS - V
Holding Current IH VD=12V, Gate Open - 30 rnA
Critical Rate of Rise of VD=Rated VPRM ' Tc=IOO·C
Off-State Voltage dv/dt 10 - V//1s
Exponential Rise
Critical Rate of Rise of VD=Rated VpRM' Tc=90·C
Off-State Voltage at (dv/dt}c 1 - V//1s
Commutation Tj=lOO·C, (di/dt}c=-1.33A/ms
VD=Rated VpRM, iT=lOA(Peak)

Gate Controlled Turn-on Time tgt - 2.S /1S
IGT=6OmA, tr=O.I/1s, Tc=2S·C
Thermal Resistance Rth(j-c) Junction to Case - 8 ·C/W
Thermal Resistance Rth(j-a} Junction to Ambient - 80 ·C/W
TOSHIBA CORPORATION
-316-
SEMICONDUCTOR
TOSHIBA T23238. T23230. T2323M
TECHNICAL DATA

(NON-REPETITIVE)
20 25
= 25 "C r\
I
To RATED LOAD
10
2
5 <> '\ ~
o ""
1>1'"'
3
1
V
... <
ES '-' 15
tIl
':01
'"'
o~l 0
tIl
'" "
~
ISi° Hz
1>1
[i! ~ I===t..
D
'" 5
r-
II
U1 o
0.6 1.0 L4. L8 2.2 2.6 3.0 1 3 5 10 30 50 100
INSTANTANEOUS ON-STATE VOLTAGE VT(V) NUMBER OF CYCLES AT 50Hz AND 60 Hz
IGT(Tc )/IGT( Tc=25'C) - Tc (TYPICAL)

2.0 4.
VD= 12 V VD=12V
P RL=30n p RL=30n
on L5 on 3
'"\I I"'--,.
'"II IGT CDl,IV)
..." .......... ..."
~ !-..rGT (I)
>
...0
>.
1.0
'" .........
r-."
............ >.
H
...0 2
I~ ~
..." "
~
IGT(H)
i'-..
~
... 0.5 1
...
-
........
~ H
0
1'--
o o
-50 60 100 14,0 -60 6C 100 14,0
CASE TEMPERATURE To ("C) CASE TEMPERATURE To ("C)
Tc MAX - IT(RMS)
FULL SINE WAVEFORM
«Xl a2
o:Uo
oL1
CONDUCTION ANGLE
o
I'
1"-1-....
r-"",
FULL SINE WAVEFORM~
a=al +a2=360 o
'"
,
L
~
DO--
CONDUCTION ANGLE
a=al +a2=350 O
0.4. 0.8 L2 L6 2.0 2.4. 2.8 3.2 0.4. 0.8 L2 L6 2.0 2.4. 2.8 3.2
R.M.S ON-STATE CURRENT IT(RMS) (A) R.14.S ON-STATE CURRENT IT (RMS) (A)
TOBHIBA CORPORATION
-317-
SEMICONDUCTOR
TOSHIBA T23238, T2323D, T2323M
TECHNICAL DATA
Ta MAX - IT(RMS)
FULL SINE WAVEFORM
~
,...
'" I' CONDUCTION ANGLE
:, a=al+ a 2=360·
I'\.
20
1\
o
o 0.2 0.4. 0.6 0.8 1.0 L2 L4. L6
R.M.S ON-STATE CURRENT IT(RMS) (A)
TOSHIBA CORPORATION
- 318-
TECHNICAL DATA C122A. C122B.C122D. C122M
r~EDIUM POWER CONTROL APPLICATIONS. Unit in rnm
ID.3MAX ,03.6±D.2
FEATURES:
~[ I~~
Repetitive Peak Reverse Voltage
JEDEC TO-220AB Package
: VRRM
: IT(AV)=S.lA
1.5 MAX
~l
!>-
~
t')
"'
.-i
~
[
0.76 I "''"
2.54 2.54 ~ 1
MAXIMUM RATINGS ~"' I I ~
CHARACTERISTIC
C122A
SYMBOL RATING
100
UNIT ~~
~ ';'~"-6'"
'1'2.:iM ~3
Repetitive Peak ~1 2
Off-State Voltage C122B VDRM 200 1. CATHODE

and Repetitive Peak V
2. ANODE (HEAT SINK)
C122D VRRM 400
Reverse Voltage 3. GATE
C122M 600 .rEDEC TO-220AB
C122A 200 EIA.r SC-46
Non-Repetitive Peak
Reverse Voltage C122B 300 TOSHIBA 13-10BIA
VRSM V
(Non-Repetitive <Sms. Weight : 2g
C122D SOO
Tj=O-12S DC)
C122M 720
IT(AV) S.l A
(Half Sine Waveform Tc=77 DC)
R.M.S On-State Current IT(RMS) 8 A

Peak One Cycle Surge On-State 82 (SOHz)
ITSM A
Current (Non-Repetitive)
90 ( 60Hz)
I 2 t Limit Value (t=l-lOms) I2t 34 A2 s
Peak Gate Power Dissipation PGM S W
Peak Forward Gate Current IGM 2.8 A
Junction Temperature Tj -40-100 DC
Storage Temperature Range Tstg -40-125 DC
The information contained herein is presented only as a guide for the applications of our EGD-C122A-l
- 319-
SEMICONDUCTOR
TOSHIBA C122A. C122B. C122D. C122M
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=25'C)

IDRM VDRM=VRRM=Rated
Current and Repetitive
Peak Reverse Current Tj=lOO'C
- - 0.5 rnA
IRRM
Peak On-State Voltage VTM ITM=16A - - 1.83 V
Gate Trigger Voltage VGT

VD=6V - - 1.5
V
RL=45.o. I Ta=-40'C - - 2.0

VD*flV - - 25
rnA
RL=45.o. I
Ta=-40·C - - 40
Gate Non-Trigger Voltage VGD VD=Rated x 2/3, Tc=lOO·C 0.2 - - V
Critical Rate of Rise of VDR~Rated, Tc=lOO·C
Off-State Voltage dv/dt 30 - - V/jJ.s
Exponential Rise
Holding Current IH VD=24V - - 30

rnA
I Ta=-40'C - - 60
Latching Current IL
VD=24V - - 60
rnA
VGK=15V, 100.0.1 Ta=-40'C - - 120
Thermal Resistance Rth(~-c) Junction to Case - - 1.8 ·C/W
EGD-C122A-2
TOSHIBA CORPORATION
-320-
SEMICONDUCTOR
TECHNICAL DATA
PT(AV) - IT(AV)
20
50
FULL SINE
30 WAVEFORM
gj ~ 16
10 II ~
°<
p"",
>
.. ~ 12
N\
Oo~ L!0o
360° al a2
15
E 180° 2400°/
f-
CONDUCTION
3 r-r- ~ '",'"
"'0
8
l:WOl~ ~ ANGLE
I 7ifl
r-f-- ...,c:§' 01-1
a=al + a2
II "'~
",p" 40
a=60°./. 0'f'
1
F"'" ii
>0-0
~ I I I I
0.5 <~
o .A" I I I I
0.3 o 2 40 6 8 10 12
0.40 0.8 1.2 1.6 2.0 2.4. 2.8 3.2 3.6 4..0
AVERAGE ON-STATE CURRENT. IT(AV) (A)
INSTANTANEOUS ON-STATE VOLTAGE VT (V)
Tc MAX - IT(AV)
120
20 FULL SINE
HALF SINE WAVEFORM
WAVEFORM
100
"""l1lI ~~
f\.
0° Wl80° 80
I'..: ~ r::::: :::::: r- lGJG;°
a=60o 120° Pea 2400 360 al a2
180 0
D;Y CONDUCTION
ANGLE
CONDUCTION
ANGLE
/ 60
120° a=al+ a 2
-- 9()0 , / /
_ 60°
a=30A..&~V 400
ILe~
K' 20
o 2 6 8 10 12
2 4. 6 8 10 12
AVERAGE ON-STATE CURRENT IT(AV) (A)
AVERAGE ON-STATE CURRENT IT (AV) (A)

Tc MAX - IT(AV) (NON-REPETITIVE)
e
120
HALF SINE .
z
100
WAVEFORM
"'~ ~
-
100
~~ ""-
D
'"~~ t- I-- 80
.."'
D
\." t:::: t:-..

....... OOW l80° ~
~
« '-"
"'"
..:I ..
80
\ "I' CONDUCTION ""'::::
III
;; '", 60
......... 1-1-
;3 ..
~~
60
a=30° 60 0 320 180°
ANGLE
"':>I
"' ....'"
0
..
11';
l!li
~~
4.0
D
OJ
.
"i.,.,
40
~~ ,:;J
ol<
20
2 40 6 8 10 12 1 3 5 10 30 50 100 300
AVERAGE ON-STATE CURRENT IT (AV) (A) NUMBER OF CYCLES
EGD-C122A-3
TOSHIBA CORPORATION
-321-
SEMICONDUCTOR
TECHNICAL DATA

(JUNCTION TO CASE)
20
"'""
:3 5 10 30 50 100 300 500 1000

TIME t (ms)
EGD-C122A-4
TOSHIBA CORPORATION
- 322-
TECHNICAL DATA C203Y,C203YY,C203A,C203B,C203C,C203D
SILICON PLANAR TYPE
LOW POWER SWITCHING AND CONTROL APPLICATIONS. Unit in mm
FEATURES: .¢l5. 1 MAX
I 'I
1
I
Repetitive Peak Off-State Voltage : VDRM } 30-400V
::i'"
Repetitive Peak Reverse Vol tage
: VRRM
: IT(AV)=50OmA 0.4.0
I ...
~
0.00
,\-t " H
JEDEC TO-92 Package ::a
0.4.0
I ~1 01~ ...~ 0
1.27 1.27
ID
~fAXIMUM I{ATINGS
~l~Tl
CHARACTERISTIC SYMBOL RATING UNIT 3
C203Y 30
!
ajlajIajI
123 ......~ 2~1
Repetitive Peak C203YY 60
Off-State Voltage C203A VDRM 100 1. CATHODE
and Repetitive Peak V 2- GATE
Reverse Voltage C203B VRRM 200 3. ANODE
(RGK=1kO) C203C 300 J"EDEC TO-g2
C203D 400 EIAJ" SC-4.3
C203Y 45 TOSHIBA 13-0A1D
Weight: 0.2g
C203YY 90
Non-Repetitive Peak
Reverse Voltage C203A 150
VRSM V
(Non-Repetitive <5ms, 300 Note: Should be used with gate
C203B
Tj=0-125°C, RGK=lk.a) resistance as follows.
C203C 450
C203D 500
~MO"'
Average On-State Current 500 rnA
(Half Sine Waveform) IT (AV)
GATE RGK=lkO OR LESS
R.M.S On-State Current IT(RMS) 800 rnA
Peak One Cycle Surge On-State 7 (50Hz)
ITSM A
Current (Non-Repetitive) CATHODE
8 (60Hz)
I 2 t Limit Value (t=l-lOms) I 2t 0.25 A2s

Peak Forward Gate Current IGM 500 rnA
Junction Temperature Tj -65-125 °c
The information contained herein is presented only as a guide for the applications of our EGD-C203Y-l
-323-
SEMICONDUCTOR
TOSHIBA C203Y.C203YY.C203A.C203B.C203C.C203D
TECHNICAL DATA
ELECTRICAL CHARACT~RISTICS (Ta=2S0C)

IDRM VD~VRR~Rated
Current and Repetitive Peak - - 50 IlA
Reverse Current IRRM RGK=lkn., Tj-12S0C
Peak On-State Voltage VTM IT~lA - - 1.5 V

VD=6V - - 0.8
V
RL=loon I Ta--6SoC - - 1.0
VD=6V - - 200
IlA
RL=loon I Ta=-6SoC - - 500
VD=Rated, RGK=lkn
Gate Non-Trigger Voltage VGD
Ta=12SoC
0.2 - - V
Holding Current IH
VD=12V - - 5.0
rnA
RGK=lkn I Ta=-6SoC - - 10.0
Thermal Resistance Rth(j-c) Junction to Case - - 125

°C/W
Rth(j-a) Junction to Ambient - - 230
TOSHIBA CORPORATION
-324-
SEMICONDUCTOR
TOSHIBA C203Y,C203YY,C203A,C203B,C203C,C203D
TECHNICAL DATA

.iii 5
3
...,'" 10
(NON-REPETITIVE)
§o ~ &l
p
., /,~ 8
......
.,
0
.
~
"' ..
~
0.5
. ~
~
............. r-..,
,~
=f:";;-' '"
~ ~
6 {S0lf.
'o" '" ~
-- ;:;-V_", 0 ..
.,H ............
,,"> '" ~
p 4
0.1
'"
0.05 ~
P<
0.03 2
0.4 0.8 L2 1.6 2.0 2.4 2.8 3.2 3.6 1 3 5 10 30 50 100 300
INSTANTANEOUS ON-STATE VOLTAGE VT (V) NUMBER OF CYCLES

(JUNCTION TO AMBIENT)
LO
DCI
180 0
120° V
60° 90° , / /
a=30° ) If, HALF SINE
WAVEFORM
'f 'ffV
If/) '/ [\
OO~J8(lO
1M ~
W CONDUCTION
ANGLE
" 0.2
AVERAGE ON-STATE CURRENT
0.4 0.6 0.8 1.0
IT(AV) (A)
1.2
TIME t (8)
Ta MAX -
160r-~--.-~---r--r-~--~-------'
SINK
120~..t--t--+-t--+-l
A
OO~J80O
AVERAGE ON-STATE CURRENT IT(AV) (A)
EGD-C203Y-3
TOBHIBA CORPORATION
-325-
SEMICONDUCTOR TOSHIBA PROGRAMMABLE UNIJUNCTION TRANSISTOR
TOSHIBA 2N6027.2N6028
TECHNICAL DATA
SILICON PLANAR TYPE
THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, Unit in mm

PULSER AND TI~1ER APPLICATIONS. ¢:5.1MAX
I I
I
FEATURES: ~
..
Programmable Item : RBB, 'I, Iv and Ip
a4.5
I ..;
· Low Leakage Current

['l~~ .'"
: IGAO=lOnA(Max.) :z:
ass H
IGKS- 50nA(Max.)
a45 oj
.....
· High Pulse Output Voltage : VO= llV(Typ.)
- ~ oj
· Low Peak Current

: Ip=2lJA (Max.) 2N6027 (RG=1MO) 1.2'1 1.27
;~"
Ip=0.15~A(Max.)2N602B (Re=1Ma) 1
;:;
TT.
aio ...
123
~
..... t2
..;
3
l. ANODE
2. GA'IE
rlAXH1Ur1 RATINGS 3- CA'IHODE
CHARACTERISTIC SYMBOL RATING UNIT JEDEC 'I0-92
Gate-Cathode Forward Voltage VGKF 40 V EIAJ SC-43
TOSHIBA 13-5A1C
Gate-Cathode Reverse Voltage VGKR -5 V
Weight: 0.2g
Gate-Anode Reverse Voltage VGAR 40 V
Anode-Cathode Voltage VAK ±40 V
DC Anode Current (Note 1) IT 150 rnA
Repetitive Peak ty=lOOlls 1

Forward Current ITRM A
(1% Duty Cycle) tw=201lS 2
Non-Repetitive Peak Forward 5 A

Current (tw=lO~s) ITSM
DC Gate Current (Note 1) IG ±50 rnA

Capacitive Discharge Energy 250
E IlJ
(Note 2)
Power Dissipation (Note 1) P 300 mW

Operating Temperature Topr -50-100 ·C
The information contained herein is presented only as a guide for the applications of our EGV-2N6027-l
-326-
SEMICONDUCTOR
TOSHIBA 2N6027.2N6028
TECHNICAL DATA

FIGURE No. 2N6027 2N602S
CHARACTERISTIC SYMBOL and UNIT
CONDITION MIN. TYP. MAX. MIN. TYP. MAX.
Peak Current
(VS=lOV)
RG=lMO Ip 1,2,3 - 1. 25 2 - O.OS 0.15
IlA
RG=lOkO - 4 5 - 0.7 1.0
Offset Voltage RG=lMO 0.2 0.7 1.6 0.2 0.5 0.6 V
VT 1,2,3
(VS=lOV) RG=lOkn 0.2 0.35 0.6 0.2 0.35 0.6
Valley Current RG=IMO
Iv 1,2,3 - IS 50 - IS 25
IlA
RG=lOkn 70 270 - 25 270 -
Gate-Anode Leakage
Current IGAO 4, VS=40V - 1.0 10 - 1.0 10 nA
Gate-Cathode Leakage
Current IGKS 5, VS=40V - 5.0 50 - 5.0 50 nA
Forward Voltage VF IF=50mA - O.S 1.5 - O.S 1.5 V

Pulse Output Voltage Vo 6,7 6 11 - 6 11 - V
Pulse Voltage Rise Time tr 6,7 - 40 SO - 40 SO ns I
Note 1 Derate linearly current and powers l%/"C above 25"C.
2 E=0.5·CV2 capacitor discharge energy limiting resistor and repetition.
Ip ,IV Ill'
Fig.l PROGRAMMABLE Fig.2 EQIVALENT TEST CIRCUIT Fig.3
UJT WITH FOR FIGURE 1 USED FOR V-I ELECTRICAL
PROGRAM RESISTORS ELECTRICAL CHARACTERISTIC CHARACTERISTICS
Rl AND R2 TESTING
s.
o
'"
~ c:
'"d ...
...
L - _...._ _...J'"
Fig.4 Fig.5 Fig.6

IGAO TEST CIRCUIT IGKS TEST CIRCUIT Vo AND tr Fig.7
TEST CIRCUIT I~AVEFORM OF Vo AND tr
EGV-2N6027-2
TOSHISA CORPORATION
- 327-
SEMICONDUCTOR
TOSHIBA 2N6027. 2N6028
TECHNICAL DATA
2N6027 Ip - Ta (TYPICAL) 2N6028 Ip - Ta (TYPICAL)

100 10
VS-10V VS-10V
50 5
30 I"\.
I\.
3
1\ \ "'\.
<'
,5.
...'"
10
5
i'- i'-r-,.
" "t.,
'"'
<
,5.
...'"
1
0.5
1\ \
" r-...
"t.,
..m
to
Z
3
......
l ....JO.,
< <OO/..... ~
to
~
m
0.3
"'\. ,<~
I'\..
"0
" ./0.,
r--.,:Q r- r- ;--
" '4- i'-...,

=> =>
<> I~ Q . . . r--- ....... to of) .......
~ 1 I"'. " ~ 0.1
I': i'-
'" 0.5
'" 0.05
0.3 ...... o.Q3
" " r-....
0.1
-~ -m
AMBIENT TEMPERATURE
0 m ~ ~
Ta (t)
~ 100
0.01
-~ -m o
AMBIENT TDoIPERATURE
m 100 60
Ta (t)
80 "I'-...100
IV - Ta (TYPICAL)
1000
Vs 10V
~
t-~lOl<~- i-- --
300 I"-.... Vo - VD (TYPICAL)
-
30
<'
,3 i ' ...... ...... l- i:::: Ta=2St
...'" 100 £ 2'

c:... c:...
..m
to
z
50
30
......
........
lOOl<.a i--
:J-.....
i--
=
--=
~
..'"
< 18
>""
~
<> ~rVO c:co......
....'"
---~
o-"l q
/
=>
to :---." . . . . 1'--- to
..:I
L
.
0
I'---J~ >
~< I"
>
10
ii:.. 12 /
/
5
.:s
=>
0
/ 0.00').1'''.......
3
ii:
6
/ L..-- ...-r
/. V ........
1
- ~ -m o m to ~ ~ 100 10 20 30 '0 50
AMBIENT TDoIPERATURE Ta (t) SUPPLY VOLTAGE Vn (V)
TOSHISA CORPORATION
-328-
TOSHIBA 2N6346~ 2N6347~ 2N6348A
TECHNICAL DATA

1 Cl 3 MAX ¢3.6+Cl2
FEATURES:
Repetitive Peak Off-State Voltage : VDRM=200-600V
R.M.S On-State Current : IT(RMS)=12A
1.3
High Commutating (dv/dt) . 1.0
. +Cl25
Cl76-Cl15
I
1.6MIN L11.6MIN
MAXIMUM RATINGS
~~H~l ~ 1. Tl
2- T2 (HEAT SINK)
2N6346A 200
3. GATE
Repetitive Peak
2N6347A VDRM 400 V
Off-State Voltage JEDEC TO-220AB
2N6348A 600 EIAJ -
TOSHIBA 13-10EIA
R.M.S On-State Current
IT(RMS) 12 A
(Full Sine Waveform Tc=80·C) Weight : 1.8g
Peak One Cycle Surge On-State 113(SOHz)
ITSM A
l20(60Hz)
r 2 t Limit Value (t=l-lOms) I 2t 64 A2s
Average Gate Dissipation PG(AV) O.S W
Peak Gate Current IGM 2 A
Junction Temperature Tj -40-l25 ·C
Storage Temperature Range Tstg -40-lS0 ·C
-329-
SEMICONDUCTOR
TOSHIBA 2N6346A, 2N6347 A, 2N6348A
TeCHNICAL DATA
ELECTRICAL CHARACTERISTICS {Ta=25·C}

IDRM VDRM=Rated VDRM, Tj=llO·C - 2 rnA
Current
I T2{+} , Gate{+} - 2

II
VGT
T2{+} , Gate{-} - 2.5
V
ill T2{-}, Gate{-} - 2
VD=12V
N T2 {-} , Gate{+} - 2.5
I RL=lOO.o.
T2{+}, Gate{+} - 50
Gate Trigger Current II IGT T2{+} Gate{-} - 75 rnA
ill T2{-}, Gate{-} - 50
N T2 (-) , Gate{-} - 75
Peak On-State Voltage VTM ITW17A - 1. 75 V
Gate Non-Trigger Voltage VGD VD=Rated VDRM. Tj=llO·C
._._. ---- -
0.2 - V
Holding Current IH VD=12V, Gate open - 40 rnA
Critical Rate of Rise of VD=Rated VDRM. Tc=lOO·C
Off-State Voltage dv/dt 100 - V//J.s
Exponential Rise
Thermal Resistance Rth{j-c) Junction to Case, AC - 2.0 ·C/W
Critical Rate of Rise of VD=Rated VDRM • Tc=80·C
Off-State Voltage at {dv/dt}c 5 - V//J.s
Commutation {di/dt}c=-6.5A/rns
Turn-on Time tgt VD=Rated VDRM. ITM=l7A - 2 /J.S

IGT=l70mA, tr=O.l/J.s
TOSHIBA CORPORATION
- 330-
SEMICONDUCTOR
TOSHIBA 2N6346~ 2N6347~ 2N6348A
TECHNICAL DATA

(NON-REPETITIVE)
00 200
30
I
J..oo" RATED LOAD
I:P
10 ~ 180
5
.., o
"'l
3 = =-~ 0;
~< 120
- /1
....
OJ
~
~
1
-'!ill Z
o
I
~
::a
80
~ F=F:: 60Hz
"'lH ~
0.5
~
OJ 40
0.3
0.14
I o
0.8 1.2 1.6 2.0 2.4 2.8 3.2 1 3 5 10 30 50 100
INSTANTANEOUS ON-STATE VOLTAGE VT (V) NUMBER OF CYCLES AT 50Hz AND 60Hz
VGT(Tc)/VGT(Tc=25'C) -Tc (TYPICAL) (TYPICAL)
,....
2.0
VD=12 V
! 2.0
IGT - Tc
VD=12V
1\
!J ....o
~
RL= 100.0. RL=lOO.o.
"''" L5 H 1.5
II
0
t:.
t.... .......
.... '\.
~
...0 1.0 f"..
r-.....
I
~
o
1.0
'\
"-
0
.... r--..... t-.... i'--
...
.....- r--
~
0.5 5
0
>
o
-60 -20 20 60 100 140 -20 20 60 100 140
CASE TEMPERATURE Tc ("C) CASE TEMPERATURE Tc ('C)
z PT(AV) - IT(RMS) Tc MAX - IT(RMS)

8 2S
FULL SINE WAVEFORM
~
~
H 24 0
OJ
OJ
H
A 20 0
rr-
0: 18)'\ 0°
t---
6
CONDUCTION ANGLE 0 t---
a=a1 +a2=3600 FULL SINE WAVEFORM
,!.:Q..
0 a1 a2
1/
/"'"
4 L
I' CONDUCTION ANGLE
a=a1 +a2=3600
0 ..... 0
0
4 6 8 10 12 14 18 2 4 8 10 12 14 16
R.M.S ON-STATE CURRENT IT(RMS) (A) R.M.S ON-STATE CURRENT IT(RMS) (A)
TOSHIBA CORPORATION
- 331-
SEMICONDUCTOR
TOSHIBA 2N6346~ 2N6347~ 2N6348A
TECHNICAL DATA

(JUNCTION TO CASE)
2.0
VD= 12V
~
p
L5 1,\
'"\I
C<
~
.." f-- e
"'"
'-'
H
A
I:ti LO
'i'... II ~
-
F me
t.-" i""- r--...
0.5 .......
I:ti
H
o 0.1
-60 -20 60 100 140 1 :3 5 10 30 50 100 300 500 1000
CASE TEMPERATURE Tc (t) TIMl!l t (me and e)
TOSHIBA CORPORATION
-332-
TECHNICAL DATA 2N6395. 2N6396. 2N6397. 2N6398
MEDIUM POWER CONTROL APPLICATIONS. Unit in rom
FEATURES:
Repetitive Peak Reverse Voltage : VRRM
Average On-State Current : IT(AV)=7.6A
T. ,.
JEDEC TO-220AB Package
1.5 MAX
~ f.t-
II I,-------'::l
iI
~
2
MAXIMUM RATINGS
Repetitive Peak 2N639s 100 ~1 1
Off-State Voltage VDRM CATHODE
2N6396 200 1.
and Repetitive Peak V 2. ANODE (HEAT SINK)
Reverse Voltage 2N6397 VRRM 400 3. GATE
2N6398 600 JEDEO TO-220AB
Non-Repetitive Peak 2N639s 150 EIAJ 80-46
Reverse Voltage TOSHIBA 13-10B1A
(Non-Repetitive <sms, 2N6396 300
V
Tj=0-12s·C) 2N6397 500 Weight : 2g
2N6398 720
IT(AV) 7.6 A
(Half Sine Waveform Tc=90·C)
Peak One Cycle Surge On-State 91 (,50Hz)
ITSM A
100 (60Hz)
I 2 t Limit Value (t=l-lOms) 72

Peak Forward Gate Current IGM 2 A
The information contained herein is presented only as a guide for the applications of our EGD-2N639s-1
-333 -
SEMICONDUCTOR
TOSHIBA 2N6395, 2N6396, 2N6397, 2N6398
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONOITION MIN. TYP. MAX. UNIT
IORM VORM=VRRM'"Rated
Current and Repetitive Peak - - 2 rnA
Reverse Current IRRM Tj=125·C
Peak On-State Voltage VTM ITW0 24A - 1.7 2.2 V

Gate Trigger Voltage VGT VO=12V, RL=lOOD. - 0.7 1.5 V
Gate Trigger Current IGT - - 30 rnA
Gate Non-Trigger Voltage VGO Vo=Rated, Tc=125·C 0.2 - - V
Critical Rate of Rise of VORM=Rated, Tc=125·C
Off-State Voltage
dv/dt
Exponential Rise
30 - - V/IJS
Holding Current IH VO=12V - 6 40 rnA

ITM=l2A, IG=40mA
Gate Turn-On Time tgt
VO=Rated
- 1.0 2.0 IJS
ITM=12A, IR=12A
- 15 -
Turn-Off Time tg Vo=Rated IJI!
ITM=12A, IR=12A
VO=Rated, Tj=125·C
- 35 -
Thermal Resistance Rth(j-c) Junction to Case - - 2 ·C/W
EGO-2N6395-2
TOSHIBA CORPORATION
-334-
SEMICONDUCTOR
TOSHIBA 2N6395. 2N6396. 2N6397. 2N6398
TECHNICAL DATA
IGT - Tc (TYPICAL)
~
100 <' 16
VD=12V
OJ
gj 50 5
v ... RL= 100 n
.,...'o" 30
h- ~ 12
<:
...
~< 10
I t'-...
o"'~ ~ ~, 8
51== ~~ ~
.,"'o .... 3 I--- '"','"U
ro ... I---
"'" .......
.., r.........
...~
I--- 1---",
r- r- .....
...~ro
o
'"
H
0.5
0.4 1.2 2.0 2.8 3.6 5.2 -60 -20 20 60 100
INSTANTANEOUS ON-STATE VOLTAGE VT (V) CASE TEMPERATURE Tc ("C)
PT(AV) - IT(AV) VGT - Tc (TYPICAL)

1
DC/ VD=12V
180,,/ V ... RL= 100 n
~ 0.8 r.........
90° / ..........
60°, V / .......
a=30o '/ / 1/ HALF SINE ..........
"'"
WAVEFORM
/ !J '/ / ...........
/ 'V/ V f\.
O~J80o
............
/~ Y'
~V CONDUCTION
ANGLE
~
2 6 8 10 12 -20 20 60 100 140
AVERAGE ON-STATE CURRENT IT(AV) (A) CASE TEMPERATURE Tc ("C)
Tc MAX - IT(AV) (TYPICAL)

16
HALF SINE
WAVEFORM -:;; VD=12V
...... 5
~~~ .f\. 12
"'-
:xl
0°\..'!....JlB:l° H
I\, I": ~ .........
a=30o
" "'"
60° 90° 180 0
CONDUCTION
......... ANGLE
r---
DC
...
'gj"
OJ
'"
0
8 "-
I'--
....... r---...I-..
--
<!l
'"~
H
4
~
0
:xl
o
2 6 8 10 12 -60 -20 20 60 100
AVERAGE ON-STATE CURRENT IT(AV) (A) CASE TEMPERATURE Tc ('C)
EGD-2N6395-3
TOSHIBA CORPORATION
-335-
SEMICONDUCTOR
TOSHIBA 2N6395. 2N6396. 2N6397. 2N6398
TECHNICAL DATA
SURGE ON-STATE CURRENT TRANSIENT THERMAL IMPEDANCE

(NON-REPFTITIVE) (JUNCTION TO CASE)
20
RATED LOAD
f = 60 Hz
...........
:---..
~
r---.....
V
3 5 10 30 50 100 300 3 5 10 30 50 100 300 1000
NUMBER OF CYCLES TIME t (ma)
EGD-2N6395-4
TOSHIBA CORPORATION
-336-
TECHNICAL DATA 2N6401. 2N6402. 2N6403. 2N6404
tlEDIUM POWER CONTROL APPLICATIONS Unit in nun
10. 3 IlAX
[
,¢3.6±0.2
FEATURES:
71r~,..
I~ ,.-I
Repetitive Peak Off-State Voltage : VDRM } =100-600V X ';7 ~
III liI
Repetitive Peak Reverse Voltage : VRRM '"'"
rl
Average On-State Current : IT(AV)=lOA ~l
JEDEC TO-220AB Package 1.51lAX i
'"
0.76 '"
i 2.54 ~ 2.54 2
t-1AXI~IU~1 RATINGS
'" I r ~
CHARACTERISTIC SYMBOL RATING UNIT ~~,;,o"o.;.H '1-2'(\ - t3
2N640l 100
Repetitive Peak ~I 1
Off-State Voltage 2N6402 VDRM 200 1. CATHODE

V
and Repetitive Peak 2. ANODE (HEAT SINK)
2N6403 VRRM 400
Reverse Voltage 3. GATE
2N6404 600 .JEDEC TO-220AB
2N640l ISO EIA.J SO-46
Non-Repetitive Peak
Reverse Voltage 2N6402 300 TOSHIBA 13-10B1A
VRSM V
(Non-Repeti tive <Sms, Weight : 2g
2N6403 500
Tj=0-12S·C)
2N6404 720
IT(AV) 10 A
(Half Sine Waveform Tc=lOO·C)

Peak One Cycle Surge On-State 145 (SOliz)
ITSM A
160 (60Hz)
I 2 t Limit Value (t=l-lOms) I2t 125 A2 s
Peak Forward Gate Current IGM 2 A
The information contained herein is presented only as a guide for the applications of our EGD-2N640l-l
-337-
SEMICONDUCTOR
TOSHIBA 2N6401. 2N6402, 2N6403, 2N6404
TECHNICAL DATA

IDRM VDRM=VRRM=Rated
Current and Repetitive - - 2 mA
Peak Reverse Current IRRM Tj=125·C
Peak On-State Voltage VTM ITM=32A - - 1.7 V

VD=12V - 0.7 1.5
V
RL=50.a 1Ta=-40·C - - 2.5
Gate Trigger Current IGT VD=12V, RL=50.a - 5 30 mA
Gate Non-Trigger Voltage VGD VD=Rated, Tc=125·C 0.2 - - V
Holding Current IH VD=12V - 6.0 40 mA
I Ta=-40·C - - 60
Thermal Resistance Rth(j-c) Junction to Case - - 1.5 ·C/W
EGD-2N640l-2
TOSHISA CORPORATION
-338-
SEMICONDUCTOR
TOSHIBA 2N6401. 2N6402. 2N6403. 2N6404
TECHNICAL DATA
IGT - Tc (TYPICAL)
16
f::::: p <' VD=12V
~ ~ C
E< RL=5 0 0
H
'" 12
/
..'"
E< I"-
Ez;. /
~~
~. ~
1-'" ct'
::l:::>
0
gj
'"
...'"
H
8
'" i'--
........
r--.....
""" I--.. f-.-
..
II<
I
ill1.2 2.0 2.8 40.4 5.2
E<
«
'"
o
-60 - 20 20 60 100 140
INSTANTANEOUS ON-STATE VOLTAGE VT CV) CASE TEMPERATURE Tc ("C)
PT(AV) - IT(AV) VGT - Tc (TYPICAL)

20 1,0
I I VD=12V
180 0 I §
RL= 500
120° / DC V 0.8
90° '.,{ VI' ., ...........

60°/ / '/ Y I ...8~ 0.6
...........
J //. L'l / '
a=300 HALF SINK
WAVEFORM
> '"'" '-...
V '/. ~ V' gj ...........
/ L0 ~ if\.
0°l-!!.J 180°
'"
S
II<
0.4
"-.
/. ~
jP E<
CONDUCTION .,
~~
ANGLE
2 4 6 8 10 12
~ 0.2
-60 - 20 20 60 100 140
Tc MAX - IT(AV) (TYPICAL)

140 16
., e 120
r- Iol.o.
HALF SINK
WAVEFORM S\.
0° I-!!J 180 °
<'
C
........ CONDUCTION 12
~~ 0::
"'-
~~
H
."
HE< 100 a=30
i""" K
60° 90° 120° 180°
..::l'"
E<
'"'" .......
~ 0 DC
8
~0 f'.,.
H'" 80 :::>
0
HII<
«:::>
'z" 4
r-.... t--...
=-i H
I-
a~
60
H
0'"
~~ 40 0
0::
2 4 6 8 10 12 - 20 20 60 100 140
EGD-2N6401-3
TOSHIBA CORPORATION
-339-
SEMICONDUCTOR
TOSHIBA 2N6401· 2N6402. 2N6403. 2N6404
TECHNICAL DATA
SURGE ON-STATE CURRENT TRANSIENT THERMAL IMPEDANCE

(NON-REPETITIVE) (JUNCTION TO CASE)
200 20
.'"... RATED LOAD
= 60H"
~ f
..«'"
<>
...
160
...........
.........
Ol
I'
I lID
"':>I vI--
.........
om f'-...
~
OJ
~
P,
130
40
1 3510 30 50 100 200
V .....
3510
- 3050 100 300 500 1000
NUMBER OF CYCLES TIME t (ms)
EGD-2N6401-4
TOSHIBA CORPORATION
-340-
TOSHIBA SEMICONDUCTOR TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR
TECHNICAL DATA MAC222A-4. MAC222A-6. MAC222A-8


10.3MAX jlJ'3.6+ 0. 2
FEATURES:
~[
110(1 ~l
Repetitive Peak Off-State Voltage : VDRM=200-600V XV
R.M.S On-State Current : IT(RMS)=8A ....
><
;:;
1.3 '"
. 1.0 z
+0.25
0.76-0.15 I !;1
0
<'l
rl
1.6MIN II1.6 MIN
~II~~ j ~
MAXIMUM RATINGS --- 1-t-~ ~
CHARACTERISTIC !1YMBOL RATING UNIT 1. Tl
2- T2 (HEAT SINK)
MAC222A-4 200 3. GATE
Repetitive Peak
MAC222A-6 VDRM 400 V
MAc222A-8 600 EIAJ -
TOSHIBA 13-10EIA
IT(RMS) 8 A
(Full Sine Waveform Tc=90·C) Weight: 1.8g
Peak One Cycle Surge On-State 73 (50Hz)
ITSM A
Current (Non-Repetitive) 80 (60Hz)
I 2 t Limit Value (t=l-lOms) I 2t 40 A2s
Peak Gate'Power Dissipation PGM 20 W
The information .contained herein is presented only as a guide for the applications of our
TOSHIBA CORPORATION
-341-
SEMICONDUCTOR
TOSHIBA MAC222A-4, MAC222A-6, MAC222A~8
TECHNICAL DATA

Current IDRM VDRM=Rated VDRM. Tj=12SoC - 2 rnA
I T2(+) , Gate(+) - 2

n
VGT
T2(+) , Gate(-) - 2
V
ill T2(-), Gate(-) - 2
VD=l2V
lIT T2(-), Gate(+) - 2.5
RL =1000
I T2(+) , Gate(+) - 50
Gate Trigger Current n

IGT
T2(+), Gate(-) - 50
rnA
ill T2(-), Gate(-) - 50
lIT T2(-), Gate(+) - 75
Peak On-State Voltage VTM ITM=l1A - 1. 55 V
Gate Non-Trigger Voltage VGD VD=Rated VDRM, Tj=125°C 0.2 - V
Critical Rate of Rise of VD=Rated VDRM. Tc=125°C
dv/dt 10 2.2 V/l1s
Off-State Voltage, Exponential Rise
Thermal Resistance RthCi-c) Junction to case, AC - 2.2 °C/W
Critical Rate of Rise of
(dv/dt)c VD=Rated VDRM, Tc=90°C 5 -
Off-State Voltage at V/l1s
Cornmoutation (di/dt)c=-4.3A/ms
TOSHIBA CORPORATION
-342-
SEMICONDUCTOR
TOSHIBA MAC222A-4. MAC222A-6. MAC222A-8
TECHNICAL DATA

.... ( NON-REPETITIVE)
50 100
Io
30
I~
f"'"
....
I 80
RATED LOAD
"!;i
10
I.J
o ~
....
Ul~
5
I- r- r- ~rf. "....~< 60
r---:: t-- 60Hz
,<
"''-'
o
3 l - t- t-
I- r-
II ~ "1 Ul
I
'-'
t--..
Ul
p ....
....
1
,,'"'" J ",:>I
a ~ 40
50---"';
~
o "H
"....~ 0.5 f1l
P
., 20
0.3
~
Ul
'"
H
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 o
1 3 5 10 30 50 100
INSTANTANEOUS ON-STATE VOLTAGE VT CV) NUMBER OF CYCLES AT 50Hz AND 60Hz
VGT(Tc )/VGT (Tc=25'C) - Tc (TYPICAL) IGT(Tc)/IGT(Tc=25'C) -Tc (TYPICAL)

2.0 2. 0
., VD= 12V
i3' \ VD= 12 V
RL=10on RL=100.o.
'"'"II 1.5 '"'"II 1. 5 '\
...." \
r-... ...." I'\.
.... ............
:>
>.
'" 1.0
..........
l- t""'-
S
>.
....
1. 0
" "'-
...." r- ...." ......
--
'-'
.... 0.5 '-' 0. 5 I'-....
:>'" H
~ t-
o O
-60 -20 60 100
20 140 -60 -20 60 100 140
CASE TEMPERATURE Tc C'C) CASE TEMPERATURE Tc C'C)
PT(AV) - IT(RMS) Tc MAX - IT(RMS)

'....o"
H
14
FULL SINE WAVEFORM
P':
~
12
,n r- t-t-
H
m
m
H
~,......... 10 0' lBO 00
r-t-
gje ~ r- b
"" 8 CONDUCTION ANGLE
~> a;:::al +a2=360o
L FULL SING WAVEFORM
,/
~
tiiI -::, 6
E~
1/
lBO~
Ul
I
Z 0°' 0°
o V
2 CONDUCTION ANGLE
.... 1 2 3 5 6 '"/ 8
a=al+a2=360o
1 2 3 5 6 7 8
R.M.S ON-STATE CURRENT IT CRMS) CA) R.M.S ON-STATE CURRENT ITCRMS) CA)
TOBHIBA CORPORATION
-343-
SEMICONDUCTOR
TOSHIBA MAC222A-4. MAC222A-6. MAC222A-8
TECHNICAL DATA
IH - Tc (TYPICAL)
2.0
VD=12V
~ ~
III 1.5
H
~
'" ......
~
i"""-
r.....
o
-60 -20 20 60 100 14.0
CASE TEMPIIlRATURE Tc ("C)
TOBHI_ CORPORATION
-344-
TECHNICAL DATA T2500B. T2500D. T2500M


1 0.3 MAX ¢3.6+0.2
FEATURES:
~~
I~ ,.IX~ ~I
Repetitive Peak Off-State Voltage : VDRM=200-600V XV
R.M.S On-State Current : IT(RMS)=6A '"r-«
:&
4 Tirgger Mode Guarantee

1.3 '"
High Commutating (dv/dt) . 1.0 z
:;i
+0.25 0
0.'16 - 0.15 <'l
'"
1.6MIN JI11.6MIN
MAXIMUM RATINGS
~~II~~S ~ -i-:-~
:I 1
CHARACTERISTIC SYMBOL RATING UNIT 1. T1

2. T2 (HEAT SINK)
T2500B 200
3. GATE
Repetitive Peak
T2500D VDRM 400 V
T2500M 600 EIAJ -
TOSHIBA 13-10E1A
IT(ftMS) 6 A
(Full Sine Waveform Tc=80·C) Weight: 1.8g
Peak One Cycle Surge On-State 50(50Hz)
ITSM A
60(60Hz)
I 2 t Limit Value (t=l-lOms) I 2t 18 A2s
TOSHIBA CORPORATION
-345-
SEMICONDUCTOR
TOSHIBA T2500B, T2500D, T2500M
TECHNICAL DATA

Current IDRM VDRM=Rated VDRM. Tj=lOO·C - 2 rnA
I T2(+). Gate(+) - 2.5

IT T2(+). Gate(-) - 2.5
V
VGT
ill T2(-). Gate(-) - 2.5
VD=12V
N T2(-). Gate(+) - 2.5
RL=12.o.
I T2(+) , Gate(+) - 25

IT
IGT
T2(+) , Gate(-) - 60
rnA
ill T2(-), Gate(-) - 25
N T2(-), Gate(+) - 60
Peak On-State Voltage VTM ITM=3OA - 2 V
Gate Non-Trigger Voltage VGD VD=Rated VDRM. Tc=lOO·C 0.2 - V
Critical Rate of Rise of VD=Rated VDRM, Tc=lOO·C
Off-State Voltage dv/dt 100 - V//ls
Exponential Rise
Thermal Resistance Rth(j-c) Junction to 'case, AC - 2.7 ·C/W
Critical Rate of Rise of VD=Rated VDRM ' Tc=80·C
Off-State Voltage at (dv/dt)c 4 - V//ls
Commutation (di/dt)c=-3.2A/ms
TOSHIBA CORPORATION
-346-
SEMICONDUCTOR
TOSHIBA T2500B, T2500D, T2500M
TECHNICAL DATA

... (MAXIMUM) (NON-REPETITIVE)
~ 30 Tc 25 t
~
0 V
V RATED LOAD
IZl 10
!ii... 5
rJ.l~
,-< 3
,,'-'
a ...........
'"......
~
1 ~ I"
&l ...... 1'-- 60Hz
...~ 0.5
0.3 t::--...
...~ 50
"'"
H 0. 1 ).4,
0.8 1.2 L6 2.0 2.4 2.8 3.2
INSTANTANEOUS ON-STATE VOLTAGE VT (V) 3 5 10 30 50 100
NUMBER OF CYCLES AT 50Hz AND 60Hz
Tc (TYPICAL) IGT(Tc)/IGT(Tc=25'C) - Tc (TYPICAL)

2.0 2.0
VD=12V
["-...
P
It)
RL=120
p-
It)
, VD=12V
RL=120
01 1.5 01 L5
\I \I
... '\
0
r- ...
0
...0
'-'
>
1.0
--- --- H
...0 LO "'- "'-
>-...
'-'
0
...0
0.5
--- :-... >-
...
0
...0
'-' 0.5
........... ~
> H
o
-60 -20 60 100 140 -20 60 100 140
CASE TEMPERATURE Tc (t) CASE TEMPERATURE Tc (t)

14
FULL SINE WAVEFORM
12 a1 42
,B[).., FULL SINE WAVEFO't:l'''-

al a2
CONDUCTION ANGLE
«=a1 +a2=3600
i-" 0
2 V
;'
130000'
CONDUCTION ANGLE
a=a1 +a2=360o
o ILl' ""'"
o 1 2 5 6 7 8 1 2 3 4 5 6 7 8
R.M.S ON-STATE CURRENT IT (RIoIs) (A) R.M.S ON-STATE CURRENT IT (RMS) (A)
TOBHIBA CORPORATION
-347-
SEMICONDUCTOR
TOSHIBA T2500B. T2500D. T2500M
TECHNICAL DATA
IH(Tc)/IH(Tc=25"C) - Tc (TYPICAL)
2.0
VD= 12V
f\.
r-....
~ 1.0
~
........
"-,..... I'.....
...
o ........
H
¥ 0.5 r-.....
o
-60 -20 20 60 100 140
CASE TEMPERATURE Tc ("C)
TOSHI_ CORPORATION
-348-
TECHNICAL DATA MAC94A-4. MAC94A-6

AC POWER CONTROL APPLICATIONS. Unit in mm

¢5.1MAX.
FEATURES:
Repetitive Peak Off-State Voltage : Vmm=200, 400V
"
!
I
.
><
R.M.S On-State Current : IT(RMS}=0.8A

0.45
I I ..
::s
!'

0.55
.\----4 zH
::s
0.5
0;\
d ;i>< ...
oi
0 H
oi
."' 1.27 1.27

j
~~v
d 2
"
;i
MAXIMUM RATINGS
1 2 3
..
H

L T1
Repetitive Peak 200 2. GATE
!MAC94A-4 V
Off-State Voltage VDRM 3. T2
!M1\C94A-6 400 JEDEC TO 92
R.M.S On-State Current EIAJ SC-43
IT(RMS} 0.8 A
(Full Sine Waveform Tc=60·C) TOSHIBA 13-5A1 E
7. 3 (SOH;I:) Weight: 0.2g

Peak One Cycle Surge On-State
ITSM A
Current (Non-Repetitive) 8 (60H;I:)
I 2 t Limit Value (t=l-lOms) I 2t 0.26 A2s
Average Gate Power Dissipation PG(AV} 0.1 W
-349-
SEMICONDUCTOR
TOSHIBA MAC94A-4. MAC94A-6
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONOITION MIN. MAX. UNIT
Current IORM VORM=Rated VORM. Tj=110°C - 0.5 rnA
I T2(+) , Gate(+) - 2

IT
VGT
T2(+) , Gate(-) - 2
V
ill T2(-) • Gate(-) - 2
]V VO=12V T2(-). Gate(+) - 2.5
RL=100n
I T2(+) • Gate(+) - 10

IT
IGT
T2(+) , Gate(-) - 10
rnA
ill T2(-) , Gate(-) - 10
]V T2(-) , Gate(+) - 10
Peak On-State Voltage VTM ITM=1.12A - 1.5 V
Gate Non-Trigger Voltage VGO VJ)=Rated VORM, Tj=110°C 0.2 - V
Holding Current IH VO=12V, Gate open - 20 rnA
Critical Rate of Rise of VO=Rated VORM, Tc=110°C

Off-State Voltage
dv/dt
Exponential Rise
5 - V/IlS
Critical Rate of Rise of VO=Rated VORM, Tc=60°C

Off-State Voltage at (dv/dt)c 2 - V/Ils
Commutation (di/dt)c=-0.43A/ms
Thermal Resistance Rth(j-c) Junction to Case - 75 °C/W

Thermal Resistance Rth(j-a) Junction to Ambient - 200 °C/W
TOSHIBA CORPORATION
-350-
SEMICONDUCTOR MAC94A-4. MAC94A-6
TOSHIBA
TECHNICAL DATA

(NON-REPETITIVE)
5
10
1 ./
io""
~ P'"
I
o
8
'- r:- ~
RATED LOAD
~60Hz
.u
50-::::: !;::,...
0.3
,;t~ ~ f::
I-- - q'l
0.1 '""
0.05
0.03 11
0.4 0.8 1.2 L6 2.0 2.4 2.8 3 5 10 30 ro 100
INSTANTANEOUS ON-STATE VOLTAGE VT (V) NUl!BER OF CYCLES 50Hz AND 60Hz
(TYPICAL) IGT - Tc (TYPICAL)

L6
t: VD=12V
8
VD=12V
... [".. RL=1000 ...
~ RL= 1000
" i'.
<!J
1.2 H S
.......
I'-..
,............ I "
o
.......
t-....
...........
" r-...
2
r--....
........
t....
-20 20
CASE TEMPERATURE
50
Tc (~)
100 140 -ceo - 20
CASE TEMPERATURE
20 so
Tc
100
(~)
140
~ PT(AV) - IT(RMS) Tc MAX - IT(RMS)

g L4
FULL SINE WAVEFORM
~
H L2 al a2
'"'"
H
~
[lE
1*
LO
0.8
o.JUo. 1/
1-
t--t-o
I"'-
2", CONDUCTION ANGLE
1/ FULL WAVEFORM r-
0.6
a=41 +42=360° .,; al a2 L"-
o!J{)_.
Oil :::
~~
......
",Po.
I 0.4 1/
~
o
«I
0.2 V
~
CONDUCTION ANGLE
-
~
I---
0.1 --
0.2 0.3 0.4 0.5 o.S 0.7 0.8
R.M.S ON-STATE CURRENT IT(RMS) (A)
a=al +a2=350·
0.1 0.2 0.3 0.4. o.~ 0.6 0.7 0.8
R.M.S ON-STATE CURRENT IT (RMS) (A)
TOSHlaA CORPORATION
-351-
SEMICONDUCTOR
TOSHIBA MAC94A-4. MAC94-6
TECHNICAL DATA
Ta MAX - IT(RMS) (TYPICAL)

:uo 2
..
i:l
!)
'-'
lJiIJ
FULL SINE WAVEFORl4 VD= 12V
~~
:l""
~
~~
100
Ell
eo
1\
IlO
oI 1SO \
CONDUCTION ANGLE
"="1+"2=360·
360.
6 "- .......
t"-.. ........
1\ r-.
d
H~
~.
40
00
I\.
8 ~
-- to-
~ ~1 ~2 ~3 ~4 ~5 ~6 ~7 ~8
o
-60 -00 00 60 100 140
R.M.S ON-STATE CURRENT IT (Rl4S) (A) CASE TEMPERATURE To ('C)

(JUNCTION TO CASE)
2
3 i"'"'
me ~
..,..."
1
1
3 5 10 30 50 100 300500 1000
TIME t (me and e)
TOSHIBA CORPORATION
-352-
TOSHIBA MAC95-4. MAC95-6
TECHNICAL DATA
AC POWER CONTROL APPLICATIONS. Unit in IIIIIl
¢5.1MAX.
FEATURES: I' 1
Repetitive Peak Off-State Voltage : VDRM=200, 400V ! ><
:li
R.M.S On-State Current : IT(RMS)=0.8A I ..."
High Commutating (dv/dt) 0.45
0.--
.I------t ",'
~1 :li>< ::;"
H
High Sensitivity Type
0.45 d oj
0
oj rl
;l 1.27
~ (~~ 1
1.27
.<
, \2:23
:li 2
MAXIMUM RATINGS ...
rl
CHARACTERISTIC SYMBOL RATING UNIT 1. Tl

Repetitive Peak I MAC95-4 VDRM
200
V
2- GATE
T2
Off-State Voltage I MAC95-6 400 JEDEC
3.
TO-92
R.M.S On-State Current ErAJ SC-43
IT(RMS) 0.8 A
(Full Sine Waveform Tc=60·C) TOSHIBA 13-5Al E
Peak One Cycle Surge On-State 7.3(50Hz) Weight : 0.2g

Current (Non-Repetitive) ITSM A
8 (60Hz)
I 2t Limit Value (t=l-lOms) I 2t 0.26 A2s
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA CDRPORATIDN
-353-
SEMICONDUCTOR
TECHNICAL DATA

Current IDRM VDRM=Rated VDRM' Tj-llO°C - 0.5 rnA
I T2(+). Gate(+) - 2
Gate Trigger Voltage II VGT T2(+) , Gate(-) - 2 V
VD=12V
ill T2(-), Gate(-) - 2
RL=lOOn
I T2(+). Gate(+) - 5
Gate Trigger Current II IGT T2(+). Gate(-) - 5 rnA
ill T2(-), Gate(-) - 5
Peak On-State Voltage VTM ITM=1.l2A - 1.5 V
Gate Non-Trigger Voltage VGD VD=Rated VDRM!. Tj=llO°C
-_._._-- 0.2 - V
Critical Rate of Rise of VD=Rated VDRM. Tc=llO·C
Off-State Voltage dv/dt 5 - V/l1s
Exponential Rise
Critical Rate of Rise of VD=Rated VDRM. Tc=60·C
Off-State Voltage at (dv/dt)c 2 - V/l1s
Commutation (di/dt) c=-O. 43A/ms
Thermal Resistance Rth(j-c) Junction to Case - 75 °C/W

Thermal Resistance Rth(j-a) Junction to Ambient - 200 °C/W
TOSHIBA CORPORATION
-354-
SEMICONDUCTOR
TECHNICAL DATA

(NON-REPETITIVE)
10
5
3 '" RATED LOAD
~ P'" ; 8
f--- t:- r-
'"
o
~
'~<
" 6
60Hz
Q
oCJ '"~
ro ~ I::::-..
':':>1
t-- t-t-:fA ~ o ~ 4 f::1::::
t-- t- II ",H
0.1 "IV ~ro 2
~
0.05
0.03 II I o
0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 3510 3050 100
INSTANTANEOUS ON-STATE VOLTAGE vT CV) NUMBER OF CYCLES 50Hz AND 60Hz
(TYPICAL) IGT - To (TYPICAL)

~ 1.6 8
C VD=12V VD=12V
RL=1 00 n
'"
~ 1.2
...........
....... H
'"
c'l
RL=100n
6
f"- ...........
r--...
'"
0.8
........ 4
.......
r-... r--.... -.....
0.4 " 2 f"...
o o
-60 -20 20 60 100 140 -60 -20 20 60 100 140
CASE TEMPERATURE Tc COC) CASE TEMPERATURE Tc COC)
PT(AV) - IT(RMS) To MAX - IT(RMS)

"o
H
1.4
FULL SINE WAVEFORM
140
'P'":
~
1.2 120
,n
~
H
ro
ro
H
A 1.0 100 1'--....
lSO 3600
V to-
80 r--~
CONDUCTION ANGLE
<1=<11 +<12=360° ./ FULL SINE WAVEFORM T'
V r---
tV
60
~ 40
I' o I lSO',\ 3600
1/ 20
CONDUCTION ANGLE
i-'"
,.,... <1=<11 +<12=360°
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
R.M.S ON-STATE CURRENT IT CRMS) CA) R.M.S ON-STATE CURRENT ITCRMS) CA)
TOSHIBA CORPORATION
-355-
SEMICONDUCTOR
TECHNICAL DATA
Ta MAX - IT(RMS) (TYPICAL)

140 3.2
FULL SINE WAVEFORM VD= 12V
d1 d2 '<
C
i"o
lJCL
2.4
iJ:l
H
'"~
Z
1.6
r"-
I' CONDUCTION ANGLE
d=d1 +d2 = 360 0
p:;
"'
0
'" r--... ........
0 r-- r-..
, z
H
A
H
0
0.8
-r--
1'-. iJ:l
00 0.1 0.2 0.3 0.4 0.5

o
0.6 0.7 0.8 -60 -20 20 60 100 140
R.M.S ON-STATE CURRENT IT (RMS) (A) CASE TEMPERATURE To COC)

(JUNCTION TO CASE)
2
01
0
z 1
S
~~
~~ 0.5
~e
..
H
::>! "
~
0.3
IDS
~
Ill.,'.,
iJ:l~ 0.1
V
'",<; ..,
... ~
z 0.05
01
H
.....
00
z
p:;
0.03
3 5 10 30 50 100 300 500 1000

TIME t (rns and s
TOSHIBA CORPORATION
-356-
TECHNICAL DATA MAC515-4. MAC515-6. MAC515-8

AC POWER CONTROL APPLICATIONS Unit in IIHIl
~
FEATURES:
Internally Isolated Type >< d
'" //
,,?-:
k ~+,~~-f-
..:
::;; +1
Repetitive Peak Off-State Voltage : VDRM=200-600V 0
.n
0

Isolation Voltage
: IT(RMS)=lSA
: VISOL=2S00V AC
N
'"
N j\
~3
2
30.2+0.3
1T
t') d
tl
d+
t1
~
t')
1
l 2
Recognized Under the Compornent Program of Underwrites t') t')
3&OMAX 1
d d
Laboratries Inc. (UL File No. E87989)
+I +1
a>
r' ..'" 912.0 "!:~3
+0.3
¢2.5 - 0
~/><
~ d
t') • ~~ 00 N
+I +1
~ ~
+0.3 'C\l11
r1AXIMUt4 RATINGS .¢1.55-0
CHARACTERISTIC SYMBOL RATING UNIT ~~

I- . +0.3
j211.6-0
MACSlS-4 200 GATE TERMINAL

Repetitive Peak
MACSlS-6 VDRM 400 V 1. GATE (FASTON TERMINAL + 187)
Off-State Voltage
2. Tl ( N N +250 )
MACSlS-8 600
3. T2 ( N N +250 )
IT(RMS) 15 A
(Full Sine Waveform Tc=80·C) JEDEC -
EIAJ -
Peak One Cycle Surge On-State l40(SOHz) TOSHIBA
ITSM A 13 - 22A1A
Current (Non-Repetitive) 150 (60Hz) Weight : 21g
I 2t Limit Value (t=l-lOms) I 2t 110 A2s
Isolation Voltage(AC, t=l min.) VISOL 2500 V
-357-
SEMICONDUCTOR
TOSHIBA MAC515-4, MAC515-6, MAC515-8
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONOITION MIN. MAX. UNIT
IORM VORM=Rated VORM
I Tc=12S·C - 2 rnA
Current
I Tc=2S·C - 0.1 IlA
I T2(+) , Gate(+) - 2
Gate Trigger Voltage IT VGT T2(+) , Gate(-) - 2 V
VO=12V
ill T2(-) , Gate(-) - 2
RL=loon
I T2(+), Gate(+) - SO
Gate Trigger Current IT IGT T2(+) , Gate(-) - SO rnA
ill T2(-), Gate(-) - SO
Peak On-State Voltage VTM ITM=21A - 1.8 V
Gate Non-Trigger Voltage VGO VO=Rated VORM, Tc=12S·C
-
0.2 - V
Holding Current IH VO=12V, Gate open - 40 rnA
Thermal Resistance Rth(j-c) Junction to case, AC - 2 ·C/W
Critical Rate of Rise of Tc=lOO·C, VO=Rated VORM

Off-State Voltage at
(dv/dt)c 5 - V/Ils
-di/dt=-8A/ms
Commutation
TOSHIBA CORPORATION
-358-
SEMICONDUCTOR
TOSHIBA MAC515-4. MAC515-6. MAC515-8
TECHNICAL DATA

(MAXIMUM) (NON-REPETITIVE)
200
RATED LOAD
100
50
30
,.., 1/ &..
10 V ...;:::::::::
60Hz
~
5
50"'==
3 =======
1
0.6
/ LO L4 1.8 2.2 2.6 3.0 3 5 10 30 50 100
VGT(Tc)/VGT(Tc=25"C) - Tc (TYPICAL) IGT(Tc)/IGT(Tc=25·C) - Tc (TYPICAL)

2.0 2.0
VD~12V VD~12V
!J
.,
RL~ 1000 ..,., RL~1000
,
L5 L5
'"II
....
0
.........
.........
'"II
0
....
"
r-....
--
LO .... 1.0
....
>
0 r-- r- H
0 "-
I'--
~ ~
0
....0 ~ ........
.... 0.5 ~
0.5
~
....0 ....
> S
o o
-60 -20 20 60 100 14,0 -60 -20 20 60 100 140
CASE TEMPERATURE To ("C) CASE TEMPERATURE To ( "C)

35 140
sv
FULL SINE WAVEFORM
l-
I-
I-
......
FULL SINE WAVEFORM
CONDUCTION ANGLE al aZ
a=al +a2=360o
'"
'"
V
"q)..
CONDUCTION ANGLE
a=al +a2=360o
I-"" o
2 4 6 8 10 12 14 16 18 o 2 4 6 B 10 12 14 16 18
R.M.S ON-STATE CURRENT IT(RMS) (A) R.M.S ON-STATE CURRENT IT(RMS) (A)
TOSHIBA CORPORATION
-359-
SEMICONDUCTOR
TECHNICAL DATA
IH(Tc)/IH(Tc=25"C) - Tc (TYPICAL)
2.0
\ VD=12V
\ GATE OPEN
P 1.5
"II
!.'< '\
"
.. 1.0 "-
H
~
iII
" I'-.. ...........
t, 0.5
.........
iII .......... r--
H
o-60 -20 20 60 100 140

CASE TEMPERATURE To (t)
TOSHIBA CORPORATION
-360-
TECHNICAL DATA
AC POWER CONTROL APPLICATIONS Unit in nnn
FEATURES:
Internally Isolated Type >< ., //
~
r:
Repetitive Peak Off-State Voltage : VDRW200-600V
;i
0
<d
d
tl
0
oi
n~
3
T i
N N 11 '"~I
R.M.S On-State Current : IT(RMS)=25A '"
Isolation Voltage
Recognized Under the Component Program of Underweites
: VISOL=2500V AC
'"d '"d
~3
3el2+el3
3&0 MAX
~II:- ~
<'l
J
1 2
,., .,...
tl tI +el3
Laboratries Inc. (UL File No. E87989) 0>
¢2.0 "!:"g3 ¢2.5 - 0
~mr ~
'"d '"d I ' I ~I~
aJ N
;l;I ;l;I +el3

'11
oi
r1AXIMU14 RATINGS "'.... ¢1.55-0
CHARACTERISTIC RATING UNIT

~~
I-- +el3
¢1.6 - 0
SYMBOL
MAC525-4 200 GATE TERMINAL
Repetitive Peak
Off-State Voltage
MAC525-6
MAC525-8
VDRM 400
600
V
2. T1
T2
(
(
.,
1. GATE (FASTON TERMINAL + 187)
, +250 )
3. N +250 )
IT(RMS) 25 A JEDEC -
(Full Sine Waveform Tc=80·C)
EIAJ -
Peak One Cycle Surge On-State 230(50Hz) TOSHIBA 13 - 22A1A
ITSM A
250(60Hz) Weight: 2lg
I2t Limit Value (t=l-lOms) I2t 260 A2s
Isolation Voltage(AC, t=l min.) VI SOL 2500 V
-361-
SEMICONDUCTOR
TECHNICAL DATA

CHARACTERISTIC SYMBOL TEST CONnITION MIN. MAX. UNIT
. Repetitive Peak Off-State
InRM VnRM=Rated VnRM
I Tc=12SoC - 2 rnA
Current
I Tc=25°C - 0.1 IlA
I T2(+), Gate(+) - 2
Gate Trigger Voltage IT VGT T2(+), Gate(-) - 2 V
Vn=12V
ill T2(-), Gate(-) - 2
RL=lOOn
I T2(+) , Gate(+) - SO
Gate Trigger Current IT IGT T2(+), Gate(-) - 50 rnA
ill T2(-) , Gate(-) - 50
Peak On-State Voltage VTM ITM=35A - 1. 75 V
Gate Non~Trigger Voltage VGn Vn=Rated VnRM, Tc=l2SoC 0.2 - V
Holding Current IH Vn=12V, Gate open - 50 rnA
Thermal Resistance Rth(j-c) Junction to case, AC - 1.5 °C/W
Critical Rate of Rise of Tc=90°C, Vn=Rated VnRM
Off-State Voltage at (dv/dt)c 5 - V/Ils
Commutation -di/dt=-16A/ms
TOSHIBA CORPORATION
-362-
SEMICONDUCTOR
TECHNICAL DATA

(NON-REPETITIVE)
I
300 250
l'...
CJ 100
I "'" 200
RATED LOAD
'"
O'l
~ 50
CJ
O'l
"-
E-<
Cf..- 30
E-<~
.... 150
I't-.
z ..
0'-'
~ E-<'-'
OJ 60Hz
/ :J.:>l
a ~ 100 ~
O'lH r-:: ~
§
OJ 50
I
1.0
I 1.5 2.0 2.5 3.0
o
1 :3 5 10 30 50 100
IGT(Tc)/IGT (Tc=25"C) - Tc (TYPICAL)

2.0 2.0
VD=12V E-<
~ \ VD= 12V
\ RL= lOOn
P 1.5
RL= lOOn
~
CJ L5
'" "\
01
II
"
E-<
"-
"" ...........
.......
O'l
E-<'-'
~
"-
1.0
OJ
I LO .
'i'..
--...
E-< Z :>l
0> ................... o OJ
> E-<
~
O'lH
" Cl5
t, ~
OJ
Cl5 i'-. ......
E-<
t""-...
~
0>
>
Po<
o o
-60 - 20 60
"
20 100 140 -60 -20 50 100 140
CASE TEMPERATURE Tc ("C) CASE TEMPERATURE Tc ("C)
Tc MAX - IT(RMS)
140
FULL SINE
120 ""- WAVEFORM
a1 «2
!J.[)..
100
/ FULL SINE WAVEFORM r-..
al a2
/
/
Jj{J... 40
CONDUCTION
ANGLE
«:=a1 +a2=360o
1/ CONDUCTION ANGLE
20
1/ a=al+ a 2=:360o
1/ o 1 I I I I I I
510152025 30 35 40 45 0510152025 30 35 40 45
R.M.S ON-STATE CURRENT IT(RMS) (A) R.M.S ON-STATE CURRENT IT (RMS) (A)
TOBHIBA CORPORATION
-363-
SEMICONDUCTOR
TOSHIBA MAC525-4, MAC525-6, MAC525-8
TECHNICAL DATA
IH( Tc )/IH( Tc=25"C)- Tc (TYPICAL)

2.0
VD= 12V
r-. GATE OPEN
p
L5 1""-
'"'"II ~
..." ["...
LO
H
ill
..... ~
A
..."
~ 0.5
"'"'" f'-..~
ill
H
o
-60 -20 20 60 100 140
CASE TEMPERATURE To (~)
TOSHIBA CORPORATION
-364-
YTS2221. YTS2222
TECHNICAL DATA
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE Unit in mm

MIDIUM-SPEED SWITCHING AND AUDIO TO +1115
2.$-113
VHF FREQUENCY APPLICATION
.,
.... 0
dd
FEATURES:
DC Current Gain Specified : O.l-SOOmA ..
d
-Ii
+1
...
d
Low Collector-Emitter Saturation Voltage gj

: VCE(sat)zl.6V(Max.) @ IC-SOOmA, IB=SOmA
Complementary to YTS2906, YTS2907 '"
.... 0
......r - - _ . r - - - r -... --4 dd.
dd +1
+1 ~
~L-_~~-+-,~~===d:!
1. EMITTER
2. BASE
3. OOLLEC TOR
JEDEO
EIAJ SO-59
TOSHIBA 2-31"1A
Weight: 0.012g
f4AXIMUM RATINGS (Ta=2S0C)
Collector Current IC 600 mA
Base Current IB 160 mA
(Ta=2S0C) Derate Linearly 2S'C Pc
1.6 mW/"C
Junction Temperature T1 ISO ·C
Storage Temperature Range Tstg -SS -ISO ·C
YTS2221 YTS2222
Marking Type Name
11~j
EI
or otherwise under any patent or patent rights of TOSHIBA or others. TOSHI_ CORPORATION
-365-
YTS2221. YTS2222
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta-2S·C, Unless otherwise noted)

YTS2221 YTS2222
MIN. MAX. MIN MAX.
Collector Cut-off Current ICBO VCB=SOV, IE=O - 10 - 10 nA
Collector Cut-off Current ICBO VCB=SOV, IE-O, Ta=lSO·C - 10 - 10 p.A
Emitter Cut-off Cu-rent lEBO VEB"3V, IC·O - 10 - 10 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=lOp.A, IE=O 60 - 60 - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOp.A, IC-O S - S - V
VCE=lOV, IC=O.lmA 20 - 3S -
VCE=lOV, IC=1.OmA 2S - 50 -
VCE-lOV, IC=lOmA 3S - 7S -
VCE-lOV, IC-SOOmA 20 - 30 -
VCE=lV, IC=lSOmA 20 - SO -
VCE-lOV, IC-lOmA
Ta=-5S·C
15 - 3S -
Collector-Emitter
IC=150mA, IB-15mA - 0.4 - 0.4 V
IC=SOOmA, IB-SOmA - 1.6 - 1.6
Base-Emitter
Saturation Voltage VBE(sat)
IC=lSOmA, .IB-15mA 0.6 2.0 - 1.3 V
IC-SOOmA, IB=SOmA - 2.6 - 2.6
Transition Frequency fT VCE=20V,IC=20mA,f=lOOMHz 2S0 - 2S0 - MHz
Collector Output
Capacitance Cob VCB-lOV, IE=O, f=lOOkHz - 8.0 - 8.0 pF
Input Capacitance Cib VEB=O.SV, IC=O, f=lOOkHz - 30 - 30 pF
TOSHIBA CORPORATION
-366-
TECHNICAL DATA YTS2221~ YTS2222A

FOR GENERAL PUROSE USE Unit in nan

VHF FREQUENCY APPLICATION
'"
... 0
FEATURES:
DC Current Gain Specified : O.l-SOOmA
dd
+1
..
d
Low Collector-Emitter Saturation Voltage

: VCE(sat)-l.OV(Max.) @ IC=SOOmA, IB=SOmA
High Transition Frequency '"
... 0
dd
+1
: @ IC=20mA YTS2221A 250MHz(Min.)
...'"
d
YTS2222A 300MHz(Min.)
• Complementary to YTS2906A, YTS2907A.
1. EMITTER
2. BASE
3. COLLECTOR
;rEDEC
EIA;r SC-59
TOSHIBA 2-3F1A
Weight: 0.012g
MAXINUM RATINGS (Ta=25 DC)
Collector-Base Voltage VCBO 7S V
Collector-Emitter Voltag,e VCEO 40 V
(Ta=2S DC) Derate Linearly 2SDC Pc
1.6 mW/DC
Junction Temperature Tj ISO DC
Storage Temperature Range Tstg -S5 -ISO DC
YTS2221A YTS2222A
Marking Type Name Marking~__Sb~~_T~y~p~e~N~am~e
1~7--E!'3--~F:r,:r....:...u:;.::.==-
11>~
EI ~ EI ~
-367-
TeCHNICAL DATA
YTS2221A. YTS2222A

YTS222lA YTS2222A
MIN. MAX. MIN MAX.
Collector Cut-off Current ICBO VCB-60V, IE=O - 10 - 10 nA
Collector Cut-off Current ICBO VCB z 60V, IE=O, Ta-lSO·C - 10 - 10 IlA
Collector Cut-off Current ICEX VCE=60V, VBE=-3V - 10 - 10 nA
Emitter Cut-off Current lEBO VEB=3.0V, IC=O - 10 - 10 nA
Base Cut-off Current IBL VCE-60V, VBE=-3V - 20 - 20 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC-lOIlA, IE=O 75 - 75 - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOIlA, IC=O 6.0 - 6.0 - V
VCE=lOV, IC=O.lmA 20 - 35 -
VCE-lOV, IC=1.OmA 25 - SO -
VCE-lQV, IC-lOmA 35 - 75 -
DC Current Gain hFE VCE-lOV, IC-lSOmA 40 120 100 300
VCE=lOV, IC-SOOmA 2S - 40 -
VCE=lV, IC=lSOmA 20 - SO -
VCE=lOV, IC=lOmA
Ta=-SS"C
IS - 35 -
Collector-Emitter
IC-lSOmA, IB=lSmA - 0.3 - 0.3 V
IC-SOOmA, IB=SOmA - 1.0 - 1.0
Base-Emitter IC=lSOmA, IB=lSmA 0.6 1.2 0.6 1.2
Saturation Voltage VBE(sat) V
IC-SOOmA, IB-50mA - 2.0 - 2.0
Transition Frequency fT VCE=20V, IC=20mA,f=lOOMHz 2S0 - 300 - MHz
Collector Output
Capacitance Cob VCB-lOV, IE=O, f=lOOkHz - 8.0 - 8.0 pF
Input Capacitance Cib VEB=0.5V, IC-O, f-lOOkHz - 25 - 25 pF

Collector-Base VCB=20V, IE-20mA
Time Constant Cc,rbb'
f-31.8MHz
- 150 - 150 pS
VCE-lOV, IC-lOOPA
Noise Figure NF
RS-lkQ, f-lkHz - - - 4.0 dB
Delay Time td VCC-30V, VBE(off)--0.5V - 10 - 10

Switching
Time
Rise Time tr IC-lSOmA, IBl-l~ig.l - 25 - 25 ns
Storage Time tstg VCC-30V, IC-150mA - 22S - 22S
Fall Time tf IBl--IB2- lSmA Fig.2
- 60 - 60
TOBHIBA CORPORATION
-368-
TOSHIB. SEMICONDUCTOR YTS2221A. YTS2222A
TECHNICAL DATA
F11. 1 DELAY AND RISE TIM! EQUIVALENT F11. 2 STORAGE TIME AND FALL TIME
TEST CIRCUIT EQUIVALENT TEST CIRCUIT
30V 30V
lSlOOIol.
d <e.On. d
g g
Of OUTPUT
co
t-...--o
n
OUTPUT
I
lIV INPUT I
o-oJ11MI<Q---f-f of Cs· o
I
o - -2V -..I
' • • 1-100101. DUTY CYCLE. ao *

DUTY CYCLE = ao *
SCOPE RISE TIHE< 4n.
* Cs : TOTAL SHUNT CAPACITANCE
TOSHIBA CORPORATION
-369-
TECHNICAL DATA VTS2906. VTS2907
FOR HIGH-SPEED SWITCHING USE Unit in mm

DC TO VHF AMPLIFIER APPLICATIONS AND +0.5
2oll-0.3
COMPLEI·IENTARY CIRCUITRY +0.25
L5-0.15
FEATURES:
High DC Current Gain Specified -0.1--50OmA
: @ IC=-50mA, fT-200MHz(Min.)
Low Collector-Emitter Saturation Voltage dd
'"
... 0
+1
: VCE(sat)--1.6V(Max.) @ IC=-500mA, IB=-50mA ...'"d
Complementary to YTS222l, YTS2222
...
d
J,
L EMITTER
a BASE
3. COLLECTOR
JEDEC
EIAJ SO-59
TOSHIBA 2-31'1A
Weight : 0.012g
(Tas 25·C) Derate Linearly 25·C Pc
1.6 mWrC
YTS2906 YTS2907
Marking TYEe Name Marking Ty!!e Name
EI
5\~ B
2\~
or otherwise und!'f any patent or patent rights of TOSHIBA or others. TOSHIBA CORPORATION
-370-
YTS2906. YTS2907
TECHNICAL DATA

YTS2906 YTS2907
CHARACTERISTIC SYMBOL YEST CONDITION UNIT
MIN. MAX. MIN MAX.
Collector Cut-off Current ICBO VCB=-SOV, IE*O - -20 - -20 nA
Collector Cut-off Current ICBO VCB=-SOV, IE-O, Ta=lSO·C - -20 - -20 IJA
Collector Cut-off Current ICEX VCE--30V, VBE-O.SV - -SO - -SO nA
Base Cut-off Current IBL VCE--30V, VBE-O.SV - -SO - -SO nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=-lOIJA, lE=O -60 - -60 - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE==lOl'A, IC=O S.O - -S.O - V
VCE=-lOV, IC=-O.1mA 20 - 3S -
VCE--10V, IC=-1.1mA 2S - SO -
DC Current Gain hFE VCE=-lOV, IC*-llmA 3S - 7S -
VCE=-lOV, IC=-lSOmA 40 120 100 300
VCE=-lOV, IC=-SOImA 20 - 30 -
Collect.or-Emitter
VCE(sat)
IC*-lSOmA, IB=-lSmA - -0.4 - -0.4 V
Saturation Voltage
IC--SOImA, IB=-SImA - -1.6 - -1.6
Base-Emitter
IC--1SImA, IB=-lSmA - -1.3 - -1.3 V
IC=-SOOmA, IB=-SImA - -2.6 - -2.6
VCE=-20V, IC·-SOmA
Transition Frequency iT 200 - 200 - MHz
i=lOOMHz
Collector Output
Capacit.llnce Cob VCB=-lOV, IE=O, i=lOOkHz - 8.0 - 8.0 pF
VEB=-2.0V, IC=O
Input Capacitance Cib
i-100kHz
- 30 - 30 pF
TOSHISA CORPORATION
-371-
TECHNICAL DATA YTS2906A. YTS2907A
FOR HIGH SPEED SWITCHING USE Unit in mm

CO~IPLEr4ENTARY CIRCUITRY
'"
... 0
dd
FEATURES: +1
...
d
High DC Current Gain Specified : -0.1- -SOOmA
: @ IC--SOmA, fT-200MHz(Min.)
• Low Collector-Emitter Saturation Voltage
: VCE(sat)--1.6V(Max.) @ IC=-500mA, IB=-50mA
Complementary to YTS2221A, YTS2222A
1. EMITTER
2. BASE
3. OOLLI!XlTOR
JEDEO
EIAJ SO-59
TOSHIBA 2-3l!'lA
Weight : 0.012g
MAXIMUM RATINGS (Ta=2S0C)
(Ta-25°C) Derate Linearly 25°C Pc
1.6 mWrC
Thermal Resistance 625 ·C/W

YTS2906A YTS2907A
Marking Type Name Marking Type Name
IB5~:r I 2~;1
B
or otherwise under any patent or patent rights of TOSHIBA or- others. TOSHIBA CORPORATION
-372-
YTS2906~ YTS2907A
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta=2S·C, Unless otherwise noted)

YTS2906A YTS2907A
MIN. MAX. MIN. MAX.
Collector Cut-off Current ICBO VCB=-SOV, IE=O - -10 - -10 nA
Collector Cu t-off Current ICBO VCB=-50V, IE=O, Ta=lSO·C - -10 - -10 JJA
Collector Cut-off Current ICEX VCE=-30V, VBE=0.5V - -50 - -50 nA
Base Cut-off Current IBL VCE=-30V, VBE=O.SV - -50 - -50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=-lOJJA, IE=O -60 - -60 - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOJJA, IC=O 5.0 - 5.0 - V
VCE=-lOV, IC=-O.lmA 40 - 75 -
VCE=-lOV, IC=-1.OmA 40 - 100 -
DC Current Gain hFE VCE=-lOV, IC=-lOmA 40 - 100 -
VCE=-lOV, IC=-lSOmA 40 120 100 300
VCE=-lOV, IC=-50OmA 40 - 50 -
Collector-Emitter
IC=-lSOmA, IB=-lSmA - -0.4 - -0.4 V
IC=-500mA, IB=-50mA - -1.6 - -1.6
Base-Emitter
IC=-lSOmA, IB=-lSmA - -1.3 - -1.3 V
IC=-SOOmA, IB=-SOmA - -2.6 - -2.6
VCE=-20V, IC=-50mA
Transition Frequency fT 200 - 200 - MHz
f=lOOMHz
Collector Output
Capacitance Cob VCB=-lOV, IE=O, f-100kHz - 8.0 - 8.0 pF
VBE=-2.0V, IC=O
Input Capacitance Cib
f-100kHz
- 30 - 30 pF
Turn-on Time ton VCC-- 3OV , IC=-150mA - 45 - 45

Delay Time td IBl--15mA - 10 - 10
Switching
Time
Rise Time tr Fig. 1 - 40 - 40
ns
Turn-off Time toff VCC--6 •OV , IC--lSOmA - 100 - 100
Storage Time tstg -IB1-IB2=-15mA - 80 - 80
TOSHIBA CORPORATION
-373-
TOSHIBA SEMICONDUCTOR YTS2906A. YTS2907A
TECHNICAL DATA
Fig. 1 DELAY AND RISE TIME Fig. 2 STORAGE AND FALL TIME
TEST CIRCUIT TEST CIRCUIT
-30V 15V -dOV

INPUT INPUT
Zo = 600 Zo = 500
PRP = 150PPS c::
o
PRP= 150PPS
RISE TIlLE S; aOns o RISE TIME S; 200 as
til
OUTPUT OUTPUT
INPUT 1.0kO .r.;~------ INPUT 1.01<0.
TO OSC ILLOSCOPE TO OSCILLOSCOPE

c::o RISE TIME S; 5.0 ns
c::
o RISE TIME S; 5.0 ns
'" '"
TOBHI_ CORPORATION
-374-
TECHNICAL DATA YTS3903
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm

APPLICATIONS. +0.5
2.5-0.3
FEATURES:
'"
.... 0
dd
• Low Leakage Current +1
ICEV=SOnA(Max.), IEBV--SOnA(Max.) '"d
@ VCE=30V, VBE=-3V
Low Saturation Voltage dd
'"
.... 0
+1·
: VCE(sat)=0.3V(Max.) @ IC=SOmA, IB=SmA '"
....
d
• Low Collector Output Capacitance
: Cob=4pF(Max.) @ VCB=5V ....
d
I
Complementary to YTS3905 1. EIoIITTER
o
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-3FIA
~~XIMUM RATINGS (Ta=2S'C)

Base Current IB SO rnA
(Ta=2S'C) Derate Linearly 25'C Pc
1.6 mW/'C
Thermal Resistance 'C/W

Marking Type Name
11B ~;1
-375-

Collector Cut-off Current ICEV VCE=30V, VBE--3V - - 50 nA
Base Cut-off .Current IBEV VCE=30V, VBE=-3V - - -50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=lOJlA, IE=O 60 - - V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC-lmA, IB=O 40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO lE=101lA, lC-O 6 - - V
hFE(l) VCE-IV, Ic=O.lmA 20 - -
hFE(2) VCE-IV, lc=lmA 35 - -
DC Current Gain hFE(3) VCE=lV, IC=lOmA 50 - 150
hFE(S) VCE=lV, IC=lOOmA 15 - -
Collector-Emitter
Saturation Voltage
VCE(sat)l IC=lOmA, IB=lmA - - 0.2 V
VCE(sat)2 IC-50mA, IB=SmA - - 0.3
Base-Emitter
Saturation Voltage
VBE(sat)l lC-lOmA,IB=lmA 0.65 - 0.85 V
VBE(sat)2 IC=SOmA,IB=SmA - - 0.95
VCE=20V, Ie=lOmA
250 - - ~!Hz
Collector Output Capacitance Cob VeB=5V, IE=O, f=lMHz - - 4 pF

Input Capacitance Cib VEB=0.5V, Ie-O, f=lMHz - - 8 pF
Input Impedance hie 0.5 - 8 kn
Voltage Feedback Ratio hre VCE=lOV, IC=lmA 0.1 - 5 xlO-4

Collector Output Admittance hoe 1 - 40 tIS
VCE=-5V, Ie=O.lmA -
iNoise Figure NF Rg=lk.O., f=10Hz -15. 7kHz - 6 dB
IDelay Time td Yin

lOkn
~i'
~ ~C VOUT total <4 p!,~
- - 35
300na N
~
'
1Cl9Vn
vcc=3.0V
Rise Time tr -Cl5V - -0 - - 35
t r , tr<l ns. Du=2r.
Switching Time ns
Storage Time tstg
""1N97J
or equiv.
20Jl
lp
"'. ~,'rCtotal<4pF
·00' -
COl,l.,
vCc=3.0V
- 175
Fall Time tf 1Cl9Vn

- 0
- - 50
IUV
TOSHISA CORPORATION
-376-

APPLICATIONS.
FEATURES: .,
... 0
. Low Leakage Current dd
+1...
: I CEV=50nA(Max.), IBEV-50nA(Max.) d
@ VCE=30V, VBE=3V
Low Saturation Voltage "'0
dd
'"
: VCE(sat)=0.3V(Max.) @ IC=50mA, IB=5mA +1
...'"
d
Complementare to YTS3906 L ElLITTER
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-3F1A
Weight: 0.012g
r,IAXIMUI4 RATINGS (Ta=25·C)
(Ta=25·C) Derate Linearly 2S·C Pc
1.6 mW/oC

Rth{j-a) 625
Storage Temperature Tstg -55-150 ·C
Markingr-__~~~~T~yp~e~N~am~e~
1~:t
8 a-1
-377-
VTS3904
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta-2S0C)

Collector Cut-off Current ICEV - 50 nA
Base Cut-off Current IBEV - -50 nA
Collector-Base 60
V(BR)CBO V
Breakdown Voltage
Collector-Emitter 40
Breakdown Voltage V(BR) CEO IC=bnA, IB-O V
Emitter-Base 6 V
Breakdown Voltage V(BR)EBO
40
70
DC Current Gain hFE(3) VCE-1V, IC-10mA 100 300
hFE(4) 60
hFE(S) 30
Collector-Emitter VCE(sat)l IC~lOmA, IB=bnA 0.2
V
Saturation Voltage 0.3
VCE(sat) 2 IC-SOmA, IB~SmA
Base-Emitter VBE(sat)1 IC=lOmA, IB=bnA 0.65 - 0.85
V
Saturation Voltage VBE(sat)2 IC=SOmA, IB=5mA - 0.95
VCE=20V, IC=lOrnA
Transition Frequency 300 - - MHz
f-100MHz
Collector Output Capacitance Cob VCB=5V, IE-O, f=lMHz 4 pF
Input Capacitance Cib VEB-0.5V, IC=O, f=lMHz 8 pF
Input Impedance hie 1.0 10 kG
I-V_o_l_t_a.:;g_e_F_e_e_d_b_a_c_k_R_a_t_i_o_ _ _+-_h.:cr_e_----l VCE=lOV, IC=bnA 0.5 8 xlO-4
Small-Signal Current Gain hfe f=lkHz 100 400
r-----~--------------~~~~
Collector Output Admittance hoe 1.0 40
Noise Figure VCE=5V, IC=O.bnA 5 dB

NF Rg=lkO, f-lOHz -15. 7kHz
Delay Time Yin lOkG·--C:-~i""""-O~ VOUT 35

'" ..:. c to1:al <4. pF
1------+-----IICl9V3 Ftt" 8; L
Rise Time tr -Cl5vl--l-o vcc=3.0V 35
Switching Time 1-_ _ _ _ _+ _ _ _ _+t..!,r..;.'_t.!.f_<_l_D_".:..,_D_U_=_2"'_O_ _--1_ _-+__+-_---l ns
Storage Time tstg 200
Fall Time 50
TOSHIBA CORPORATION
-378-
VTS3905
TECHNICAL OAT A

APPLICATIONS. +0.5
2.5-0.3
+0.25
FEATURES: 1.5-0.15 .,
.... 0
• Low Leakage Current dd
+1
ICEV=-SOnA(Max.), IBEV=-SOnA(Max.) d "
@ VCB=-30V, VBE=3V
Low Saturation Voltage '"
.... 0
dd
+1
: VCE(sat)=-0.4V(Max.) @ IC--SOmA, IB--SmA
'"
....
d
....
: Cob=4.SpF(Max.) @ VCB=-SV d
Complementary to YTS3903 1. EIlITTER b

2. BASI!:
3. COLLECTOR
.rEDEC
EIA.r SC-59
TOSHIBA 2-31!'1A
Weigh~ : 0.012g
MAX mUM RATINGS (Ta=2S·C)
(Ta=2S·C) Derate Linearly 2S·C Pc
1.6 mW/·C
Rth(j-a) 625
Storage Temperature Tstg -SS -ISO ·C
Marking Type Name
1 st,
B
-379-
TeCHNICAL DATA YTS3905

Collector Cut-off Current ICEV VCE--30V, VBE=3V - - -50 nA
Base Cut-off Current IBEV VCE--30V, VBE=3V - - 50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=-lOItA, IE=O -40 - - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE--lOttA, IC=O -5 - - V
hFE(l) VCE--lV, IC"-O.lmA 30 - -

hFE(2) VCE--lV, IC=-lmA 40 - -
DC Current Gain hFE(3) VCE=-lV, IC=-lOmA 50 - 150
hFE(4) VCE"-lV, IC=-50mA 30 - -
hFE(5) VCE"-lV, IC=-lOOmA 15 - -
Collector-Emitter VCE(sat)1 IC=-lOmA, IB--lmA - - -0.25
V
Saturation Voltage VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4
Base-Emitter
Saturation Voltage
VBE(sat)1 IC'"-lOmA, IB=-lmA -0.65 - -0.85 V
VBE(sat)2 IC=-50mA, IB--5mA - - -0.95
VCE=-20V, IC=-lOmA
200 - - MHz
Collector Output Capacitance Cob VCB=-5V, IE"O, f=lMHz - - 4.5 pF
Input Capacitance Cib VEB"-O. 5V, IC=O,f-lMHz - - 10 pF
Input Impedance hie 0.5 - 8 kn
Voltage Feedback Ratio hre VCE=-lOV, IC"-lmA 0.1 - 5 xlO-4
Small-Siganl Current Gain hfe f=lkHz 50 - 200
Collector Output Admittance hoe 1.0 - 40 itS
VCE"-5V, IC=-O.lmA
Noise Figure NF
R,,=lkO, f-lOHz - 15. 7kHz
- - 5 dB
Delay Time td(ON) v in ~VOUT c: ' C - - 35

"' Y total<4.pF
g; ~
Rise Time tr
t1
Cl6V
-lCl6V
VCc=-3.0V
tr.tf<ln. - - 35
Switching Time 300n. Du=2'1"D ns
lOkO vOUT
~f -
Storage Time Vin - 200
tstg IN916
. *Ctotal
' <&pP
or equlv
'"vcc=-3.0V'"
Fall Time tf
9.1V:l;j
-lCl9V
-- 0
't r t tf<.l n& - - 60
201t. Du-2%
TOSHIBA CORPORATION
-380-
FOR GENERAL PURPOSE USE SWITCHING AND Af.IPLIFIER Unit in mm

APPLICATIONS. +115
2.5-113
FEATURES:
"'
... 0
dd
• Low Leakage Current +1...
ICEV=-SOnA(Max.), IBEV=SOnA(Max.) 01 d
d
@ VCE=-30V, VBE=3V
~
'"
..;
'"
N
Low Saturation Voltage ... 0 '"
.----,--r--,---f ~?
OI ...
: VCE(sat)=-0.4V(Max.) @ IC=-SOmA, IB=SmA dd
+1 '"
...
• Low Collector Output Capacitance ~~~~~~~===d~
...
: Co b=4.SpF(Max.) @ VCB=-SV d
I
L EMITTER o
Complementary to YTS3904
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA ~-3F1A
Weight : 0.012g
MAXIMUM RATINGS (Ta=2S'C)
Base Current IB -SO mA
(Ta=2S'C) Derate Linearly 2S'C Pc
1.6 'C/W
Thermal Resistance 625 'C/W
(Junction to Ambient) Rth (j-a)

Marking Type Name
I 2~;1
EI
-381-
YTS3906
TECHNICAL DATA

Collector Cut-off Current ICEV VCE"'-30V, VBE-3V - - "-50 nA
Base Cut-off Current IBEV VCE=-30V, VSE=3V - - 50 nA
Collector-Sase
Breakdown Voltage V(SR)CBO IC=-lOIlA, IE=O -40 - - V
Collector-Emitter
Breakdown Voltage V(BR) CEO IC=-lmA, IB=O -40 - - V
Emitter-Base
Breakdown Voltage V(SR)EBO IE=-lOIlA, IC=O -5 - - V
hFE(l) VCE=-lV, IC=-O.lmA 60 - -

hFE(2) VCE=-lV, IC=-lmA 80 - -
DC Current Gain hFE(3) VCE=-lV, IC=-lOrnA 100 - 300
hFE(4) VCE=-lV, IC=-sOmA 60 - -
hFE(s) VCE=-lV, IC=-lOOmA 30 - -
Collector-Emitter
Saturation Voltage
VCE(sat)l IC=-lOmA, IB=-lmA - - -0.25 V
VCE(sat)2 IC=-sOmA, IS=-smA - - -0.4
Sase-Emi tter VSE(sat)l IC=-lOmA, IS=-lmA -0.65 - -0.85 V
Saturation Voltage
VSE(sat)2 IC=-sOmA, IS=-smA - - -0.95
VCE=-20V, IC=-lOmA
250 - - MHz
Collector Output Capacitance Cob VCS=-sV, IE=O, f=lMHz - - 4.5 pF
Input Capacitance Cib VES=-O. SV , IC=O, f=!MHz - - 10 pF
Input Impedance hie 2.0 - 12 k.O.
Voltage Feedback Ratio hre vCE=-iov, IC=-lmA 1.0 - 10 XlO-4
Collector Output Admittance hoe 3.0 - 60 IlS
Noise Figure NF VCE=-sV, IC=-O.lmA - - 4 dS
Rg=lkn, f=lOHz -15. 7kHz
Delay Time td v in ~VOUT

C; I
- - 35
'" J.,Ctotal <4pF
... T
Q.5Vg Ol
vcc
'"
=-3.0V
Rise Time tr -l(l5V
300ne
t r , tf <1 ne
Du=2%
- - 35
Switching Time ns
10k.D.
~1-'''' - -
Vin 225
Storage Time tstg IN916
or equ1v.
...
10
Ol
*Ctotal <&pP'
,
,p,
alV vcc=-3.0V
Fall Time tf
-lo.9V
Uo
't r , tf<l no - - 75
20lle Du=2'!'.
TOBHIBA CORPORATION
-382-
YTS4123
TECHNICAL DATA

APPLICATIONS. +0.5
2.5-0.3
FEATURES:
· Low Leakage Current ICBO=50nA(Max.) @ VCB=20V
IEBO=50nA(Max.) @ VEB=3V
· Low Saturation Voltage
<0
• Low Collector Output Capacitance ,",0
dd
: Co b=4pF(Max.) @ VCB=5V +1'
Complementary to YTS4l25 ''""'

d
'"'d
1. EMITTER
b
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-3F1A
Weight : 0.012g
r'lAxrr~UM RATINGS (Ta=25 ·C)
Base-Emitter Voltage VEBO 5 V
Pc
(Ta=25·C) Derate Linearly 25·C 1.6 mW/·C

Marking Type Name
17~'
8
- 383-
ELECTRICAL CHARACTERISTICS (Ta~2S·C)

Emitter Cut-off Current lEBO VEB=3V, IC=O - - 50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=lO.uA, IE=O 40 - - V
Collector-Emitter
Breakdown Voltage V(BR)CEO 1C=lmA, 1B=0 30 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lO.uA, 1C=0 5 - - V
DC Current Gain hFE(l) VCE=lV, IC=2mA 50 - 150

Collector-Emitter
Saturation Voltage VCE(sat) IC=SOmA, 1B=SmA - - 0.3 V
Base-Emitter
Saturation Voltage VBE(sat) IC=SOmA, IB=5mA - - 0.95 V
Small Signal Forward VCE=20V, IC=lOmA

Current Transfer Ratio Ihfe l 2.5 - -
f=lOOMHz
VCE=20V, IC=lOmA
Transition Frequency fT 250 - - MHz
f=lOONHz
Collector Output Capacitance Cob VCB=SV, IE=O, f=lMHz - - 4 pF
Input Capacitance Cib VEB=O.SV, IC=O, f=lMHz - - 8 pF
Small Signal Current Gain hfe VCE=lOV, IC=2mA, f=lkHz 50 - 200
VCE=5V, IC=lOO.uA
Noise Figure NF
Rg=lkn, f=10Hz -15. 7kHz
- - 6 dB
TOSHIBA CORPORATION
-384-
YTS4124
TECHNICAL DATA
FOR GENERAL PURPOSE SWITCHING AND AMPLIFIER Unit in mm

APPLICATIONS.
FEATURES:
'"
.... 0
dd
· Low Leakage Current ICBO=50nA(Max.) @VCB=20V
IEBO=50nA(Max.) @ VEB=3V ..
d
-H
+1
~
d
• Low Saturation Voltage (]I

N
: VCE(sat)=0.3V(Max.) @ IC-50mA, IB=5mA
· Low Collector Output Capacitance dd
'"
.... 0
+1
: Cob=4pF(Max.) @VCB=5V '"
....
d
Complementary to YTS4l26
....
d
L EMITTER I
o
2. BASE
3. OOLLECTOR
JEDEO
EIAJ SO-59
TOSHIBA 2-3F1A
Weight : 0.012g
~IAxmUM RATINGS (Ta=25'C)
(Ta=25'C) Derate Linearly 25'C Pc
1.6 mW/'C
Thermal Resistance 625 'C/W

Junction Temperature T1 150 ·C

Marking Type Name
I Z~;r
B
The information contained herein is presented only as a gujde for the applications of our
-385-
TOSHIBA SEMICONDUCTOR YTS4124
TECHNICAL DATA

Emitter Cut-off Current lEBO VEB=3V, IC=O - - 50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=lOI'A, IE=O 30 - - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=lOI'A, IC=O 5 - - V
DC Current Gain hFE(l) VCE=lV, IC=2mA 120 - 360

hFF.(2) VCE=lV, Ic=50mA 60 - -
Collector-Emitter
Base-Emitter
Saturation Voltage VBE(sat) IC=50mA, IB=5mA - - 0.95 V
Small Signal Forward VCE=20V, IC=lOmA

Current Transfer Ratio Ihfe l
f=100MHz
3.0 - -
VCE=20V, IC=lOmA
f=100MHz
300 - - MHz
Collector Output- Capacitance Cob VCB=5V, IE=O, f=lMHz - - 4 pF

Input Capacitance Cib VEB=0.5V, IC=O, f=lMHz - - 8 pF
Small Signal Current Gain hfe VCE=lOV, IC=2mA, f=lkHz 120 - 480
VCE=5V, IC=lOOI'A
Noise Figure NF
Rg=lkn, f= 10Hz - 15. 7kHz
- - 5 dB
TOSHIBA CORPORATION
-386-
YTS4125
TECHNICAL DATA

APPLICATIONS. +0.5
2. -
FEATURES: "'
... 0
dd
• Low Leakage Current ICBO=-SOnA(Max.) @VCB--20V +1
IEBO=-SOnA(Max.) @VEB--3V "
d
• Low Saturation Voltage

: VCE(sat)=-0.4V(Max.) @ IC--SOmA, IB--SmA
..
... 0
: Cob=4.SpF(Max.) @ VCB=-SV
dd
+1 .....
d
1. EMITTER
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-3FIA
Weight : 0.012g
r4AXIMUM RATINGS (Ta=2S'C)
(Ta=2S'C) Derate Linearly 2S'C Pc
1.6 mW/'C
Thermal Resistance 'C/W
Rth(j-a) 625

-387-
YTS4125
TECHNICAL DATA

Collector Cut-off Current ICBO VCB",-20V, IE-O - - -SO nA
Emitter Cut-off Current lEBO VEB--3V, IC=O - - -SO nA
Collector-Base
Breakdown Voltage V(BR)CBO IC--lOJlA, IEaO -30 - - V
Collector-Emitter
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-lOJlA, IC=O -4 - - V
DC Current Gain hFE(l) VCE=-lV, IC'.-2mA SO - 150

hFE(2) VCE=-lV, IC=-50mA 25 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC=-50mA, IB"-5mA - - -0.4 V
Base-Emitter
Saturation Voltage VBE(sat) IC=-50mA, IB--5mA - - -0.95 V
Small Signal Forward VCE=-20V, IC=-lOmA

Current Transfer Ratio I hfe I
f=lOOMHz
2.0 - -
VCE=-20V, IC"-lOmA
f=lOOMHz
200 - - MHz
Collector Output Capacitance Cob VCB=-5V, IE=O, f-lMHz - - 4.5 pF

Input Capacitance Cib VEB=-0.5V, IC=O, f"'LMHz - - 10 pF
Small Signal Current Gain hfe VCE--I0V, IC=-2mA,f=lkHz 50 - 200
VCE=-5V, IC=-lOOJlA
Noise Figure NF
Rg=lk1l, f=10Hz -15. 7kHz
- - 5 dB
TOSHISA CORPORATION
-388-
VTS4126
TECHNICAL DATA

APPLICATIONS. +0.&
2.5-0.3
FEATURES:
'"
.... 0
dd
• Low Leakage Current ICBo~-50nA(Max.) @ VCB=-20V +1...
IEBO=-50nA(Max.) @VEB=-3V d
• Low Saturation Voltage

: VCE(sat)=-0.4V(Max.) @ IC=-50mA, IB~-5mA
• Low Collector Output Capacitance dd.

'"
... 0
+1
: Cob=4.5pF(Max.) @ Vca=-5V ....'"
d
....
d
1. EIoIITTER b
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-311'1A
Weight : O.012g
(Ta=25"C) Derate Linearly 25"C Pc
1.6 mW/"C
Thermal Resistance 625 "C/W

Storage Temperature Range Tstg -55 -150 "C
Marking Type Name
15 ~;1
B
-389-
YTS4126
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Ta~25°C)

Collector Cut-off Current ICBO VCB=-20V. IE"'O - - -50 nA
Emitter Cut-off Current lEBO VEB=-3V. IC=O - - -50 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=-lO.uA. IE-O -25 - - V
Collector-Emitter
Breakdown Voltage VCBR)CEO IC=-lmA. IB=O -25 - - V
Emitter-Base
Breakdown Voltage VCBR)EBO IE=-lO.uA. IC·O -4 - - V
DC Current Gain hFE(1) VCE=-lV. IC=-2mA 120 - 360

hFE(2) VCE--lV. IC=-50mA 60 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC=-50mA. IB=-5mA - - -0.4 V
Base-Emitter
Saturation Voltage VBE(sat) IC=-SOmA. IB=-SmA - - -0.95 V
Small Signal Forward VCE=-20V. IC=-lOmA

Current Transfer Ratio I hfe I
f=lOOMHz
2.5 - -
VCE=-20V. IC=-lOmA
f=lOOMHz
250 - - MHz
Collector Output Capacitance Cob VCB=-SV. IE=O. f=lMHz - - 4.5 pF
Input Capacitance Cib VEB-O.SV, IC=O, f=lMHz - - 10 pF
Small Signal Current Gain hfe VCE=-lOV, IC--2mA,f=lkHz 120 - 480
VCE=-5V, IC=-lOO.uA
Noise Figure NF
Rg=lk.Cl, f-10Hz -15. 7kHz
- - 4 dB
TOSHIBA CORPORATION
- 390-
YTS4400
TeCHNICAL DATA
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in DIID
APPLICATIONS. +(15
2.5-(13
+(125
L5-(111l
FEATURES: '"
... 0
dd
Low Leakage Current
: ICEV=lOOnA(Max.), IBEV~-lOOnA(Max.)
..
d Ol
+1~
d
@VCE-3sV, VBE=-0.4V ~ ""

01
Excellent DC Current Gain Linearity <0
... 0
.----t--,--+ ~l
: VCE(sat)=O. 4V(Max.) @ IC"l50mA, IB=lsmA ...'" d
: Cob=6.spF(Max.) @ VCB=sV
L EMITTER 1
o
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-3F1A
Weight : 0.012g
MAXIMU~1 RATINGS (Ta=2s·C)
(Ta=2s·C) Derate Linearly 2S·C Pc
1.6 mW'·C

Marking Type Name
I 7§>r;1
B
-391-
ELECTRICAL CHARACTERISTICS {Ta~25°C}

Collector Cut-off Current ICEV VCE'"35V, VBE'"-0.4V - - 100 nA
Base Cut-off Current IBEV VCE=35V, VBE=-0.4V - - -100 nA
Collector-Base
Breakdown Voltage V(BR}CBO 1C=O.lmA, IE=O 60 - - V
Collector-Emitter
Breakdown Voltage V(BR}CEO IC=lmA, 1B"'O 40 - - V
Emitter-Base
Breakdown Voltage V(BR}EBO 1E-O.lmA, IC=O 6 - - V
hFE(l} VCE=lV, 1C=lmA 20 - -

DC Current Gain hFE(2} VCE=lV, IC·lOmA 40 - -
hFE(3} VCE-lV, IC=150mA 50 - 150
hFE(4} VCE'"2V, IC=500mA 20 - -
Collector-Emitter
Saturation Voltage
VCE(satH IC-150mA, IB=15mA - - 0.4 V
VCE(sat)2 IC-500mA, IB=50mA - - 0.75
Base-Emitter VBE(sat)l IC=150mA, IB=15mA 0.75 - 0.95 V
Saturation Voltage
VBE(sat)2 IC"500mA, IB=50mA - - 1.2
VCE=lOV, IC=20mA
f=lOOMHz
200 - - MHz

Input Capacitanc~ Cib VEB=0.5V, IC=O, f=lMHz - - 30 pF
Input Impedance hie 0.5 - 7.5 kn
Voltage Feedback Ratio hre VCE"'lOV, IC=lmA 0.1 - 8 xlO-4
Collector Output Admittance hoe 1.0 - 30 .as
Delay Time td ~in

lkfi VOUT
~f+Ctotal <lapp
- - 15
~ ,j, tr(scope ) <4.ns
VCC=30V
Rise Time tr l6V20 .a a
t r <2na - - 20
-2nO 0uS;;29!>
Switching Time ns
lkfi vOUT
- Storage Time tstg ivin
~.t +Ctotal <lapp
g tr( scope) <4.n
,j,
- - 225
Vaa=-4.
VcC=30V
Fall Time tf 16,'f.°IJ. - - -30
-U,V
[10 tt<lIona
OilS;; 2%
TOSHISA CORPORATION
-392-
YTS4401
TECHNICAL DATA

APPLICATIONS. +o.~
2.5-0.3
FEATURES:
"'
.... 0
Low Leakage Current

: ICEV-lOOnA(Max.). IBEV=-lOOnA(Max.)
dd
+1
d
.
@VCE-3SV. VBE=-0.4V
... 0
..
.....
dd
-r---..--1'-..,....-+ ~1..
: VCE(sat)=0.4V(Max.) @ IC-lSOmA. IB-lSmA +1 ...
~ d
: Cob=6.SpF(Max.) @VCB=SV
...
d
L EMITTER I
o
Complementary to YTS4403 2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-31"1 A
Weight : 0.012g
MAXIMUl4 RATINGS (Ta=2S"C)
(Ta=2S"C) Derate Linearly 2S"C Pc
1.6 mW/"C
Thermal Resistance 62S "C/W
Junction Temperature Tj ISO "C

Storage Temperature Range Tstg -SS -ISO ·C
Marking Type Name
12~'
B
-393-

Collector Cut-off Current ICEV VCE-35V, VBE~-0.4V - - 100 nA
Base Cut-off Current IBEV VCE-35V, VBE--0.4V - - -100 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC=O.lmA, IE-O 60 - - V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC=lmA, IBzO 40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=O.lmA, IcsO 6 - - V
hFE(l) VCE=IV, IC=O.lmA 20 - -
hFE(2) VCE=IV, IC"lmA 40 - -
DC Current Gain hFE(3) VCE=IV, IC"'lOmA 80 - -
hFE(4) VCE'" IV , IC=lSOmA 100 - 300
hFE(S) VCE"'2V, IC=SOOmA 40 - -
Collector-Emitter
Saturation Voltage
VCECsat)l IC=lSOmA,IB"'lSmA - - 0.4
V
VCE(sat)2 IC=SOOmA,IB=SOmA - - 0.7S
Base-Emitter
Saturation Voltage
VBE(sat)l IC=lSOmA,IB=15mA 0.7S - 0.9S V
VBE (sat--) 2 IC=SOOmA,IB=SOmA - - 1.2
VCE=lOV, IC=20mA
f=lOOMHz
250 - - MHz

Input Capacitance Cib VEB=O.5V, IC=O, f-lMHz - - 30 pF
Input Impedance hie 1.0 - 15 kfi
Voltage Feedback Ratio hre VCE=lOV, IC=lmA 0.1 - 8 xlO-4
Small-Signal Current Gain hfe f=lkHz 40 - SOO
Collector Output Admittance hoe 1.0 - 30 .as
V1~VOUT
Delay Time td o 4o Cmta1 <lOpF - - 15
~ ,j,. t r(scope) <4.ns
VcC=30V
l6V~s
Rise Time tr
-aJlo
tr<ans
Du~a1.
- - 20
Switching Time ns
lkQ
Storage Time tstg "1n o~t'+CmtalvOUT<lOpll' - - 225
~ ,j,.tr(scops) <4.ns
VBB=-4.V
Vcc=30V
16"'~s
Fall Time tf
-uvFl:o
tt<20ns - - 30
Du~2"
The information contained herein is presented only a. a lIUide for the applications of pur
products. No r~sponsibility is. assumed by TOSHIBA for any infrinaements of patents or other
rights of the third partIes whIch may result from It. use. No license " granted by Imphcatlbn
-394-

APPLICATIONS.
FEATURES:
'"
... 0
• Low Leakage Current
: ICEV~-lOOnA(Max.), IBEV~lOOnA(Max.)
dd
.
+1
d
Excellent DC Current Gain Linerarity

: VCE(sat)=-0.4V(Max.) @ IC--l50mA, IB--15mA dd
'"
... 0
+1
Low Collector Output Capacitance ...
<Q
d
: Cob-8.5pF(Max.) @ VCB~-lOV
...
d
I
L I!lIUTTER o
2. BASE
3. COLLI!lCTOR
.rEDEC
EIA.r SC-59
TOSHIBA 2-3FIA
Weight : 0.012g
Collector-Emitte~ Voltage VCEO -40 V
Collector Power DiSSipation 200 mW
Pc
(Ta=25°C) Derate Linearly 25°C 1.6 mWrC
Thermal Resistance
Rth(j-a) 625 °C/W
Marking Type Name
15~'
B
-395-
YTS4402
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (Taa 25°C)

Collector Cut-off Current ICEV VCE=-3SV, VBE=0.4V - - -100 nA
Base Cut-off Current IBEV VCEa-35V, VBE,,0.4V - - 100 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC--O.lmA, IE-O -40 - - V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC=-lmA, IB~O -40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-O.lmA, IC-O -5 - - V
hFE(l) VCE--1V, IC=-lmA 30 - -

DC Current Gain hFE(2) VCE=-lV, IC=-lOmA 50 - -
hFE(3) VCE=-lV, IC=-150mA SO - 150
hFE(4) VCE"-2V, IC=-500mA 20 - -
Collector-Emitter
Saturation Voltage
VCE(sat)l IC=-150mA, IB=-15mA - - -0.4 V
VCE(sat)2 IC=-SOOmA, IB=-50mA - - -0.75
Base-Emitter VBE(sat)l IC=-150mA, IB=-15mA -0.75 - -0.9S V
Saturation Voltage
VBE(sat)2 IC"-SOOmA, IB=-SOmA - - -1.3
VCE=-lOV, IC=-20mA
f=lOOMHz
150 - - MHz
Collector Output Capacitance Cob VCB=-lOV, IE=O, f=lMHz - - 8.5 pF

Input Capacitance Cib VEB=-O.SV, IC=O, f=lMHz - - 30 pF
Input Impedanc.e hie 0.7S - 7.S kn
Voltage Feedback Ratio hre VCE=-lOV, IC=-lmA 0.1 - 8 xlQ-4
Collector Output Admittance hoe 1.0 - 100 IlS
lkO VOUT
Delay Time td Vin
1!,"CtXltal<lOPII' - - 15
~ ,;. t~(""ope) <"ns
VCC=-30V
Rise Time tr 2Vt:r
-16V
t~<2ns - - 20
201l.
Du:i2'}'o
Switching Time ns
- Storage Time tstg [vin
lkO
VBB=4.V
1! + -vOUT
o , CtotaJ. <lOpP
'" ,.. t~(scope) <4.n.
- .- 225
Fall Time tf avU

-16V
-- 0
VCC=-30V
tt<20ne -- - 30
20lle Du:ia9!>
TOSHIBA CORPORATION
- 396-
YTS4403
TECHNICAL DATA
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in !DID
APPLICATIONS.
FEATURES:
'"
.... 0
dd
• Low Leakage Current +1...
ICEV=-lOOnA(Max.), IBEV-lOOnA(Max.) d
@ VCE=-3sV, VBE=0.4V 3
: VCE(sat)=-0.4V(Max.) @ IC=-lsOrnA, IB=lsrnA
• Low Collector Output Capacitance
....
: Co b=8.spF(Max.) @ VCB=-lOV d
I
L EMITTER 0
2. BASE
3. COLLECTOR
JEDEC
EIAJ SC-59
TOSHIBA 2-3F1A
Weight : O.012g
14AXH·1UM RATINGS (Ta=2s·C)
Collector-Emitter. Voltage VCEO -40 V
(Ta=2s·C) Derate Linearly 2s·C Pc
1.6 mW/"C
Thermal Resistance
Rth(j-a) 625 ·C/W
Junction Temperature Ti 150 ·C
Storage Temperature Range TstlZ -55 -150 ·C
-397-

Collector Cut-off Current ICEV VCE=-35V, VBE=0.4V - - -100 nA
Base Cut~off Current IBEV VCE -35V, VBE-0.4V
2
- - 100 nA
Collector-Base
Breakdown Voltage V(BR)CBO IC--O.lmA, IE=O -40 - - V
Collector-Emitter
Breakdown Voltage V(BR)CEO IC·-lmA, IB=O -40 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE=-O.lmA, IC=O -5 - - V
hFE(l) VCE--1V, IC=-O.lmA 30 - -

hFE(2) VCE--1V, IC=-lmA 60 - -
DC Current Gain hFE(3) VCE=-lV, IC=-lOmA 100 - -
hFE(4) VCE=-lV, ·IC=-l50mA 100 - 300
hFE(5) VCE=-2V, IC=-500mA 20 - -
Collector-Emitter VCE(sat)l IC=-150mA, IB=-15mA - - -0.4 V
Saturation Voltage
VCE(sat)2 IC--500mA, IB=-50mA - - -0.75
Base-Emitter
Saturation Voltage
VBE(sat)l IC=-150mA, IB=-15mA -0.75 - -0.95 V
VBE(sat)2 IC=-500mA, IB=-50mA - - -1.3
VCE=-lOV, IC=-20mA
f=lOOMHz
200 - - MHz
Collector qutput Capacitance Cob VCB=-lOV, IE=O, f=lMHz - - 8.5 pF

Input Capacitance Cib VEB=-0.5V, IC=O, f=lMHz - - 30 pF
Input Impedance hie 1.5 - 15 ko.
Voltage Feedback Ratio h re VCE=-lOV, IC=-lmA 0.1 - 8 xlO-4
Collector Output Admittance hoe 1.0 - 100 I'S
no. c: , VOUT
Delay Time td
Vin
~r'" Ctotal <lOpP
- - 15
'" ;,. tr(scopo) <4.ne
VCC=-30V
Rise Time tr 2Vt:r

-16V
tr<Zns
Du~z9&
- - 20
Switching Time 20l's ns
Storage Time tstg Vil1 1 ko. . ~f' VOUT

o .Ctotal <lOpP - - 225
o ,
_ 0I,jp tr( scope) <4.I1.s
VBB-4.V
VcC=-30V
Fall Time tf l4.Vtjo
-16V tt<zOns - - 30
ZO;8 ou:;;z9&
TOSHIBA CORPORATIDN
-398-
TOSHIBA DIODE
SEMICONDUCTOR
TOSHIBA DLN914, DLN914A, DLN914B
Unit in mm
FEATURES:
. Low Forward Voltage
Small Total Capacitance
: VF=1.0V (Max.)
: CT=4pF (Max.)
Fast Reverse Recovery Time : trr=4ns (Max.)
t~
I
\~~~'
"
\ ~
on
,? .
. Hermetically Sealded Miniature Lead Less Glass Package •
?=: W
~
'"
CATHODE MARK .
d
+1
~
d
+
'"
m

Maximum (Peak) Forward Current IFM 450 mA
JEDEC
Average Forward Current 10 150 mA I!:IAJ
Surge Current (bs) IFSM 2 A TOSHIBA l-lDlA
Storage Temperature Range Tstg -65- 200 ·C

DLN914 VF(l) IF=lOmA - 0.75 1.0 V
Forward Voltage DLN914A VF(2) IF=20mA - 0.79 1.0 V

VF(3) IF=5mA 0.62 0.67 0.72 V
DLN914B
VF(4) IF"lOOmA, t=lOms - 0.9 1.0 V
IR(l) VR"20V - - 25 nA
Reverse Current IR(2) VR=20V, Ta=150·C - - 50 pA
IR(3) VR"75V - - 5 pA
Total Capacitance CT VR=O, f-lMHz - 0.9 4.0 pF
Reverse Recovery Time trr IF"lOmA, VR=6V - 2.0 4.0 ns

RL-lOon, I r r- lmA
rights of the third parties which may result from its use. No license i. granted by implication
TOSHIBA CORPORATION
or otherwise under any patent or patent rights of TOSHIBA or othero.
-399-
SEMICONDUCTOR
TOSHIBA DLN914, DLN914A, DLN914B
TECHNICAL DATA
104
TYPICAL CHAR. ,..... To. 25"C
t 10ma <
/1/ la3
"
.. 10
.u
~
.. lr!-
Io
~ ~F~i=
~
~ I/~
~
~/f?
z
Oil
gj
::>
0
10
TYPICAL
f- I"'l
(l1
co
ili>
I"'l
0:
(l0~,L-~(l~2~~Cl~4~~Cl~6~~(l~8~1~.0~-1~.2~~L·4~~L5 50
40 80 100
CT - VR -3.5
_
••
~Or-~nnm-'I'ITrrlllmrl.-r-----,
III Ta=25"C !...l
~ = IMHz """
o~ -3.0
.. 1251--f-+-Hfttti+-+-Ir-,IHI+tIIIl+t+--+-i f
I 111111 '"'--- -2.5
Z
: !DO r=:t::a~a~Ty~p~I~C~A~LJ:-~r1~~rwr=-='~t1 b
I"'l ..
H ""
o l':rl'l
:;;: - 2.0
~ (l75~~+4+H~-1-+tHtm--~HH~~~~
°oft,
tll"'l
g~-l.5 i""
~< I"'l;>
g; ~ -1.0
o
'"'
<I=>
&l ei! - (l5
n
.. "" 0
(l01 Cll 10 100
1 10 100
VR=75 V
....c't-'V
.......«
, I y
.
o
lrr I
&l
I
'"
.... lO
j 1
~
10-10 25 150 75 100 125 lI50 l75

AMBIENT TEMPERATURE To. ("C)
TOSHIBA CORPORATION
-400-
TOSHIBA DLN4148
TeCHNICAL DATA SILICON EPITAXIAL PLANAR
, Unit in nun
CO~1MUrHCATIONAND INDUSTIlIAL APPLICATIONS
HIGH VOLTAGE, ULTRA HIGH SPEED SHITCHING APPLICATIONS.
FEATURES:
Low Forward Voltage
Small Total Capac i tanc.,
: VF=l. 2V (Nax. )
: CT=3pF (Hax. )
,
\ '11 ~
"
,~,
,
' 0
tI...
~
Fast Reverse Recovery Time .'

t r r=4ns (llax. )
Hermetically S""ld"d Hiniature Lead Less Glass Package.
T
I ,.
..., d....
d
CATHODE MARK +i
0 "
I1AXIMUrl RATINGS (Ta=2SoC)
N
d '"
Maximum (Peak) V
Vltlj 100
Reverse Voltage
Maximum (Peak)
IFM 500 rnA J EDEC -
Forward Current EIAJ
Average Forward Current 10 200 rnA TOSHIBA l-lD1A
Surge Current (1 sec) IFSM 700 rnA Weight : 0.029g
Junction Temperature T; 175 °c
Storage Temperature Range Tst2 -65-175 °c

CHARACTERISTIC SYMBOL TEST CONDITION HlN. TYP. MAX. UNIT
Forward Voltage VF(l) IF=10mA - 0.75 1.0 V

VF(2) IF=lOOmA - 0.95 1.2 V
IR(2) VR=75V - - 0.1 JJA

Total Capacitance CT VR=O, f=HIHz - 1.5 3.0 pF
Reverse Recovery Time trr VR=6V, IF=10rnA

RL=1000 (Fig. )
- 2.0 4.0 ns
TOSHIBA CORPORATION
-401-
DLN4148
TECHNICAL DATA
Fig. trr TEST CIRCUIT OUTPUT WAVI!:I'ORM

11'
IN~1JUT
WAVl!:l'OIUlfUOITIM'
i.I.lI:r Oac.
o--~~----~~---
e: 'i! ~
o ~" .n
'"
-6V
hlJrul
II<' - V~,
:so 0 ,
~ ~V
-
T .. 150"(;
10 0
.. --. l-- 1~5 ...
00
.L ,
.L
~ 30
//.
'// 'iii III ~
100
10 ~ r;1. 'j, rl Ii- 75

./
,
, I I I I
2
I I 11/ I I 25
1 'II 'II II I a ....... 0

/'
0.0
0.3 -0/5/11111i~
~ ~ :; (to. " ~ j'-<
I""
0.1
el2
/v 11111/ Id
el4 o.~ 0.8 1.0
1
FORWARD VOLTAOI!: VI!' (V) 1

25 50 75 100 125
REVERS&: VOLTAGE VR (V)
P - Ta
40
!
......
'" 30
0 "-
...
:;.... 20 "-
'"'" "-
"-
M
~
10
I aa :;0
AMBIENT TEMPERATURE
100 "" 150 200
T" ('C)
250
TOSHIBA CORPORATION
-402-
TOSHIBA DIODE
SEMICONDUCTOR DLN4446. DLN4447. DLN4448. DLN4449
TOSHIBA
Unit in nun
FEATURES:
Low Forward Voltage
Small Total Capacitance
: VF=1.0V (Max.)
: CT=4pF (Max.)
Fast Reverse Recovery Time : t r r=4ns (Max.)
Ef% ~
\ .~.
..
_J ~
~
u>
Hermetically Sealded Miniature Lead Less Glass Package.
~
I
MAXIMUM RATINGS (Ta=2s'C) I +, +

CHARACTERISTIC SYMBOL RATING UNIT '".;. °1.
.. 3
CATHODE MARK
~

Reverse Voltage VR 75 V •
Maximum (Peak) Forward Current Inl 450 mA
Average Forward Current 10 150 mA
Surge Current (l~s) IFSM 2 A
JEDEC -
EIAJ
Junction Temperature Tj 200 ·C TOSHIBA I-lOlA
Storage Temperature Range Tstg -65 - 200 ·C Weight : 0.029g
ELECTRICAL CHARACTERISTICS (Ta=2s·C)

DLN4446/7 VF(l) IF=20mA - 0.79 1.0 V
VF(2) IF=smA 0.62 0.67 0.72 V
DLN4448
Forward Voltage VF(3) IF=lOOmA, t=lOms - 0.9 1.0 V
VF(4) IF=smA 0.63 0.68 0.73 V
DLN4449
VF(s) IF=30rnA - 0.8 1.0 V
IR(l) VR=20V - - 25 nA
Reverse Current IR(2) VR=20V, Ta=lsO·C - - 50 ~A
IR(3) VR=75V - - 5 ~A
Total Capacitance
DLN4446/8 CT(l) VR=O, f=IMHz - 0.9 4.0 pF
DLN4447/9 CT(2) VR-O, f=IMHz - 0.9 2.0 pF
IF-lOrnA, VR=6V,
RL=lOOO, Irr=lmA
- 2 4 ns
TOSHIBA CORPORATION
-403-
SEMICONDUCTOR
TOSHIBA DLN4446. DLN4447. DLN4448. DLN4449
TeCHNICAL DATA
1000 104
TYPICAL CRAIL To.-25"(;
t 10ms
1//
10
,
F F~.,Cf-
f- I-
"",.e:
y"'i"
'I' TYPICAL
1
~ I,'"
~ ..."
0.1
0.01
o 0.2 0.4 0.6 o.e 1.0 1.2 1.4. 1.6 aJ 40 60 80 100
CT - VR
~Or-'-~nnrr--r"Trrm-~'--------'
,. . , II "' To.= 25"(;
'"
~ U5~~~~I&-~,HII+I~"'~~
IIIIII f == 1KHz
...
<>
~ 1.00 ~:1:Emm:~Typ;I~C~A~~I~:-~t~j~rwt=-~~~
~ 0.75f-~+++Hrrr~-+tH+m--~-H~~-r~
....
~ Q.50f-~+++H~~-++H~--~-H~~~~
<> I
~ 0.25~~~~r-~HY~!~~~**~~
~ I I
...
0o.~.~~~ual~~~~l~O~~-U~l~OO~~
IRe Temp.)/ IRe 25 ·0) - Ta

VR=75 V
..,c't-\>
,,"1."1
1 V
10-1
o 25 so 75 100 l25 lSO 1715
AllBIENT TEIIPERATURE To. ("(;)
TOSHIBA CORPORATION
-404-
Semiconductor Products Division Area GRices
EASTERN AREA: CENTRAL AREA: WESTERN AREA:

The Burlington Business Center 1101 A Lake Cook Road 2692 Dow Avenue
67 South Bedford Street - Suite 102E Deerfield, IL 60015 Tustin, CA 92680
Burlington, MA 01803 Tel. : (312) 945-1500 Tel. : (714) 832-6300
Tel. : (617) 272-4352
I· TOSHIBA
TOSHIBA AMERICA, INC.
I Electronic Components Business Sector
Semiconductor Products Division Headquarters
2692 Dow Avenue
Tustin, CA 92680
Telephone: (714) 832-6300

Toshiba Discrete Semiconductors

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TOSHIBA AMERICA. INC.

2. Small Signal Transistors ................................... 1- 48

2N3904 ............................. 3 ~JE13008 .......................... 82

2N3905 ............................. 7 ~JE13oo9 .......................... 84

2N3906 ............................. 9 TIP29 ............................. 86

Bipolar Power Transistors MOSFET Power Transistors

~JE13002.......................... 70 YTFI50 ........................... 164

Fast-On Terminal Package

*Contact nearest Toshiba America Sales office for specification information.

2N3713 2N3055 2N3772 2N4399

TIP29 TIP31 TIP41

TIP29A TIP31A TIP120 TIP41 A TSB140*

TIP29B TIP31B TIP121 TIP41B TSB141*

TIP29C TIP31C TIP122 TIP41C TSB142*

MJE13002 MJE13004 MJE13006 MJE13008

MJE13003 MJE13005 MJE13007 MJE13009

*TSBxxx EQUIVALENT TO TIPxxx SERIES. TO-3P (BS) PACKAGE

2N3903 2N4400 MPS2222

8 YTF233 YTF232 YTF441 YTF440

TRANSISTOR - POWER MOS FET

7 YTF523 YTF522 YTF443 YTF442

8 YTF521 YTF520 YTF441 YTF440

12 YTF533 YTF532 YTF453 YTF452

400 1N4004 1N4004A 1N4003B 1N5060 1N5625

600 1N4005 1N4005A 1N4005B 1N5061 1N5626

800 1N4006 1N4006A - 1N5062 1N5627

1000 1N4007 1N4007A 1N4007B - -

*1 2fJA MAX 0.1S ....A MAX

IT(RMs) (A) .10.8 4 8 12 16

PACKAGE T0-92 TO-202 TO-220AB

100 V C203A C106A C122A 2N639S 2N6401

200 V C2038 C1068 C1228 2N6396 2N6402

600 V - C106M C122M 2N6398 2N6404

*1. Center pin gate type

400 MAC94A-6 MAC9S-6 T2323D T2S00D MAC222A-6 2N6347A MACS15-6 MACS2S-6

600 - - T2323M T2500M MAC222A-8 2N6348A MAC51S-8 MAC52S-8

*1. 4 mode trigger type

LEAD LESS DIODE

FOR GENERAL PURPOSE USE SHITO:ING ArID AI1PLIFIER Unit in mm

APPLICATIONS. 5.1 MAX

Low Leakage Current

Excellent DC Current Gain Linearity

f1Axmurl RATINGS (Ta=25°C) Weight: 0.21g

ELECTRICAL CHARACTERISTICS (Ta=25°C)

'" Input Capacitance Cib VEB=O. 5V, IC=O, f-lMHz - - 8 pF

'" VoltageImpedance hie 0.5 - 8 kO

*In accordance with JEDEC registration data.

FOil GENERAL PURPOSE USE SIHTCHING Arm A~'PLIFlm Unit in mm

Low Collector Output Capacitance

ELECTRICAL CHARACTERISTICS (Ta=25°C)

* Base Cut-off Current IBEV VCE=30V, VBE=-3V - - -50 nA

hFE(l) VCE=lV, IC=O.lmA 40 - -

Fall Time tf 10.9Vi-i.

'" In accordance with JEDEC registration data.

o 1IJ U 0.3 125

FOR GENERAL PURPOSE USE S~JITCHING AND A~lPLIFIER Unit in mm

@ VCE=-30V, VBE=3V .£!.L ' , 0;

Excellent DC Current Gain Linearity

MAXIMurl RATINGS (Ta=25°C) Weight: 0.2lg