DIGITRON SEMICONDUCTORS

MCR265 SERIES THYRISTORS

SCRs/55 Amps/50-800 Volts
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS (TJ=25°C unless otherwise noted)

RATING SYMBOL VALUE UNIT
(1)
Peak Reverse Blocking Voltage 50
MCR265-2
200
MCR265-4
VRRM 400
MCR265-6 Volts

MCR265-8 600

MCR265-10 800

Forward Current (TC=70°C) IT(RMS) 55

Amps
(All Conduction Angles) IT(AV) 35
Peak Non-repetitive Surge Current – 8.3 ms
ITSM Amps
(1/2 Cycle, Sine Wave) 550
Forward Peak Gate Power PGM 20 Watts
Forward Average Gate Power PG(AV) 0.5 Watt
Forward Peak Gate Current
lGM Amps
(300μs, 120 PPS) 2.0
Operating Junction Temperature Range TJ -40 to +125 °C
Storage Temperature Range Tstg -40 to +150 °C
1. VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative voltage, however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to ensure proper heat sinking when the device is to be used at high sustained
currents.

THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX UNIT
Thermal Resistance, Junction to Case RθJC 0.9 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

CHARACTERISTIC SYMBOL MIN TYP MAX UNIT
Peak Forward Blocking Voltage (TJ = 125°C) MCR265-2 50 - - Volts
MCR265-4 200 - -
MCR265-6 VDRM 400 - -
MCR265-8 600 - -
MCR265-10 800 - -
Peak forward blocking current
IDRM mA
(rated VDRM @ TJ = 125°C) - - 2.0
Peak reverse blocking current mA
IRRM
(rated VRRM @ TJ = 125°C) - - 2.0
Forward “on” voltage(1)
VTM Volts
(ITM = 110A) - 1.5 1.9
Gate trigger current (continuous dc)
(Anode voltage = 12Vdc, RL = 100ohms) IGT - 20 50 mA
(TC = -40°C) - 40 90
Gate trigger voltage (continuous dc)
VGT Volts
(Anode voltage = 12Vdc, RL = 100ohms) - 1.0 1.5
Gate non-trigger voltage
VGD Volts
(Anode voltage = rated VDRM, RL = 100ohms, TJ = 125°C) 0.2 - -

144 Market Street phone +1.908.245-7200 sales@digitroncorp.com

Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130116
 DIGITRON SEMICONDUCTORS
1. Pulse Width≤300μs, Duty Cycle≤2%

MCR265 SERIES THYRISTORS

SCRs/55 Amps/50-800 Volts

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

CHARACTERISTIC SYMBOL MIN TYP MAX UNIT
Holding current mA
IH
(anode voltage = 12Vdc) - 30 75
Turn-on time µs
tgt
(ITM = 55A, IGT = 200mAdc) - 1.5 -
Critical rate of rise of off-state voltage V/µs
dv/dt
(gate open, rated VDRM, exponential waveform) - 50 -

MECHANICAL CHARACTERISTICS
Case TO-220AB
Marking Alpha-numeric
Pin out See below

144 Market Street phone +1.908.245-7200 sales@digitroncorp.com

Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130116
 DIGITRON SEMICONDUCTORS
MCR265 SERIES THYRISTORS
SCRs/55 Amps/50-800 Volts

144 Market Street phone +1.908.245-7200 sales@digitroncorp.com

Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130116