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    2SD2253 SavantIC

    Uploaded by

    Nurjaman Elektro
    This document provides the product specification for the SavantIC Semiconductor 2SD2253 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-base voltage of 1700V, collector-emitter voltage of 600V, and collector current of 6A. - Electrical characteristics include a collector-emitter saturation voltage of 5V max at 5A collector current, DC current gain of 8-28, and transition frequency of 1-3MHz. - The package outline diagram shows the dimensions of the TO-3P

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SD2253 SavantIC

    Uploaded by

    Nurjaman Elektro
    24 views3 pages
    This document provides the product specification for the SavantIC Semiconductor 2SD2253 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-base voltage of 1700V, collector-emitter voltage of 600V, and collector current of 6A. - Electrical characteristics include a collector-emitter saturation voltage of 5V max at 5A collector current, DC current gain of 8-28, and transition frequency of 1-3MHz. - The package outline diagram shows the dimensions of the TO-3P

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    2SD2253_SavantIC

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    This document provides the product specification for the SavantIC Semiconductor 2SD2253 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-base voltage of 1700V, collector-emitter voltage of 600V, and collector current of 6A. - Electrical characteristics include a collector-emitter saturation voltage of 5V max at 5A collector current, DC current gain of 8-28, and transition frequency of 1-3MHz. - The package outline diagram shows the dimensions of the TO-3P

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    24 views3 pages

    2SD2253 SavantIC

    Uploaded by

    Nurjaman Elektro
    This document provides the product specification for the SavantIC Semiconductor 2SD2253 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package with a built-in damper diode for color TV horizontal output applications. - Absolute maximum ratings include a collector-base voltage of 1700V, collector-emitter voltage of 600V, and collector current of 6A. - Electrical characteristics include a collector-emitter saturation voltage of 5V max at 5A collector current, DC current gain of 8-28, and transition frequency of 1-3MHz. - The package outline diagram shows the dimensions of the TO-3P

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    © All Rights Reserved
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    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD2253

    DESCRIPTION
    www.datasheet4u.com
    ·With TO-3P(H)IS package
    ·Built-in damper diode
    ·High voltage ,high speed

    APPLICATIONS
    ·Color TV horizontal output applications

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector
    Fig.1 simplified outline (TO-3P(H)IS) and symbol
    3 Emitter

    Absolute maximum ratings (Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter 1700 V

    VCEO Collector-emitter voltage Open base 600 V

    VEBO Emitter-base voltage Open collector 5 V

    IC Collector current 6 A

    ICM Collector current-peak 12 A

    IB Base current 3 A

    PC Collector power dissipation TC=25 50 W

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD2253

    CHARACTERISTICS
    Tj=25 unless otherwise specified
    www.datasheet4u.com
    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V

    VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 5.0 V

    VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V

    ICBO Collector cut-off current VCB=500V; IE=0 10 µA

    IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA

    hFE DC current gain IC=1A ; VCE=5V 8 28

    fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz

    COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF

    VF Diode forward voltage IF=5A 2.0 V

    ts Storage time 6.0 µs


    Resistive load
    ICP=5A ;IB1=1A;IB2=-2A;RL=40A
    tf Fall time 0.4 µs

    2
    SavantIC Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD2253

    PACKAGE OUTLINE

    www.datasheet4u.com

    Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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