Scribd
Upload
89 views2 pages

LED Bar Design

This document provides specifications for a GaN LED chip called the S-35EBMUD-H. The chip has a super high brightness and long lifespan. It has a chip size of 21mil×34mil and thickness of 7.9mil. Key electro-optical characteristics include a forward voltage of 2.8-3.2V at 120mA and a dominant wavelength of 447.5-460nm. Maximum ratings include a forward DC current of ≤240mA and junction temperature of ≤125°C. Characteristic curves show properties like relative intensity and voltage in relation to current and temperature.

Uploaded by

Abir Ahmed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
89 views2 pages

LED Bar Design

This document provides specifications for a GaN LED chip called the S-35EBMUD-H. The chip has a super high brightness and long lifespan. It has a chip size of 21mil×34mil and thickness of 7.9mil. Key electro-optical characteristics include a forward voltage of 2.8-3.2V at 120mA and a dominant wavelength of 447.5-460nm. Maximum ratings include a forward DC current of ≤240mA and junction temperature of ≤125°C. Characteristic curves show properties like relative intensity and voltage in relation to current and temperature.

Uploaded by

Abir Ahmed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

GaN LED

S-35EBMUD-H

◆ Product characters： ◆ Applications：


● Super high brightness with long life. ● Lighting
● All the chips are 100% tested and sorted. ● Backlight
● High uniformity with wavelength and brightness. 34

◆ Mechanical Specification：
Dimension 2.9

2.9
21
● Chip size: 21mil×34mil (533±25.4μm×864±25.4μm)
● Thickness: 7.9mil (200 ± 15μm)
● P bonding pad: 2.9mil (75 ± 10μm)
● N bonding pad: 2.9mil (75 ± 10μm) P-electrode
P-electrode N-electrode
N-electrode
Metallization
● Topside P electrode: Au

7.9
● Topside N electrode: Au
Reflector
Unit:mil
◆ Electro-optical Characteristics at 22℃：

Parameter Symbol Condition Min Typ Max Unit

Vf1 If =120mA 2.8 3.2 V


Forward voltage
Vf4 If =1μA 2.0 2.5 V

Reverse current Ir Vr=-7V 0 1 μA

Dominant wavelength λd If =120mA 447.5 460 nm

Spectral half-width ∆λ If =120mA 16 nm

I210 210 230


Radiant flux PO If =120mA mW
I230 230 250

Note：
● GaN LED chip is an electrostatic sensitive device,so ESD protection during chip handling is
recommended.
● The wavelength span is 2.5nm，the dominant wavelength maintains a tolerance of ±1.0nm.
● All measurements are done with San’an electro-optical testing equipment.
● Radiant flux measurement allows a tolerance of ±10%.
● Customer’s special requirments are also welcome.

Tel: 0592-5937000 5937001 Fax: 0592-5937060 5937019


Website: www.sanan -e. corn Email: marketing@sanan-e.com Add: #1721-1725，Lvling Road. 361009-Xiamen.PRC

Super high LED specification RevA.2017 E1


GaN LED
S-35EBMUD-H

◆ Absolute Maximum Ratings：


Parameter Symbol Condition Rating Unit
Forward DC current If Ta = 22℃ ≤240 mA
Junction temperature Tj ---- ≤125 ˚C
chip -40~+85 ˚C
Storage temperature Tstg chip-on-tape/storage 0~40 ˚C
chip-on-tape/transportation -20~+65 ˚C
Temperature during packaging ---- ---- 280(<10s) ˚C
Note：
● Maximum ratings are package dependent.The above maximum ratings were determined using a Printed
Circuit Board(PCB) without an encapsulant.Stresses in excess of the absolute maximum ratings such as
forward current and junction temperature may cause damage to the LED.
● The LED is not designed to be driven in reverse bias, we suggest it should be operated under.

◆ Characteristic Curves：
Fig.1-Relative Luminous Intensity vs. Forward Current Fig.2-Forward Current vs. Forward Voltage

Fig.3-Relative Intensity (@120mA) vs. Ambient Temperature Fig.4-Forward Voltage (@120mA) vs. Ambient Temperature

Fig.5-Dominant Wavelength (@120mA) vs. Ambient Fig.6-Maximum Driving Forward DC Current vs. Ambient
Temperature Temperature ( Derating based on Tj max=125℃)

Tel: 0592-5937000 5937001 Fax: 0592-5937060 5937019


Website: www.sanan -e. corn Email: marketing@sanan-e.com Add: #1721-1725，Lvling Road. 361009-Xiamen.PRC

Super high LED specification RevA.2017 E1

You might also like