Pe Seminar - 1

IRT POLYTECHNIC COLLEGE
POWER ELECTRONICS
SEMINAR – 1
Insulated Gate Bipolar Transistor
The Insulated Gate Bipolar Transistor also called an IGBT for short, is
something of a cross between a conventional Bipolar Junction Transistor,
(BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a
semiconductor switching device.
The IGBT Transistor takes the best parts of these two types of common
transistors, the high input impedance and high switching speeds of a
MOSFET with the low saturation voltage of a bipolar transistor, and
combines them together to produce another type of transistor switching
device that is capable of handling large collector-emitter currents with
virtually zero gate current drive.
Typical IGBT
The Insulated Gate Bipolar Transistor, (IGBT) combines the insulated
gate (hence the first part of its name) technology of the MOSFET with the
output performance characteristics of a conventional bipolar transistor,
(hence the second part of its name).
The result of this hybrid combination is that the “IGBT Transistor” has the
output switching and conduction characteristics of a bipolar transistor but
is voltage-controlled like a MOSFET.
IGBTs are mainly used in power electronics applications, such as
inverters, converters and power supplies, were the demands of the solid
state switching device are not fully met by power bipolars and power
MOSFETs. High-current and high-voltage bipolars are available, but their
switching speeds are slow, while power MOSFETs may have higher
switching speeds, but high-voltage and high-current devices are
expensive and hard to achieve.
The advantage gained by the insulated gate bipolar transistor device over
a BJT or MOSFET is that it offers greater power gain than the standard
bipolar type transistor combined with the higher voltage operation and
lower input losses of the MOSFET. In effect it is an FET integrated with a
bipolar transistor in a form of Darlington type configuration as shown.
We can see that the insulated gate bipolar transistor is a three terminal,
transconductance device that combines an insulated gate N-channel
MOSFET input with a PNP bipolar transistor output connected in a type of
Darlington configuration.
As a result the terminals are labelled as: Collector, Emitter and Gate.
Two of its terminals (C-E) are associated with the conductance path which
passes current, while its third terminal (G) controls the device.
The amount of amplification achieved by the insulated gate bipolar
transistor is a ratio between its output signal and its input signal. For a
conventional bipolar junction transistor, (BJT) the amount of gain is
approximately equal to the ratio of the output current to the input current,
called Beta.
For a metal oxide semiconductor field effect transistor or MOSFET, there
is no input current as the gate is isolated from the main current carrying
channel. Therefore, an FET’s gain is equal to the ratio of output current
change to input voltage change, making it a transconductance device and
this is also true of the IGBT. Then we can treat the IGBT as a power BJT
whose base current is provided by a MOSFET.
The Insulated Gate Bipolar Transistor can be used in small signal
amplifier circuits in much the same way as the BJT or MOSFET type
transistors. But as the IGBT combines the low conduction loss of a BJT
with the high switching speed of a power MOSFET an optimal solid state
switch exists which is ideal for use in power electronics applications.
Also, the IGBT has a much lower “on-state” resistance, RON than an
equivalent MOSFET. This means that the I2R drop across the bipolar
output structure for a given switching current is much lower. The forward
blocking operation of the IGBT transistor is identical to a power MOSFET.
When used as static controlled switch, the insulated gate bipolar transistor
has voltage and current ratings similar to that of the bipolar transistor.
However, the presence of an isolated gate in an IGBT makes it a lot
simpler to drive than the BJT as much less drive power is needed.
An insulated gate bipolar transistor is simply turned “ON” or “OFF” by
activating and deactivating its Gate terminal. Applying a positive input
voltage signal across the Gate and the Emitter will keep the device in its
“ON” state, while making the input gate signal zero or slightly negative will
cause it to turn “OFF” in much the same way as a bipolar transistor or
eMOSFET. Another advantage of the IGBT is that it has a much lower on-
state channel resistance than a standard MOSFET.
IGBT Characteristics
Because the IGBT is a voltage-controlled device, it only requires a small

voltage on the Gate to maintain conduction through the device unlike
BJT’s which require that the Base current is continuously supplied in a
sufficient enough quantity to maintain saturation.
Also the IGBT is a unidirectional device, meaning it can only switch current
in the “forward direction”, that is from Collector to Emitter unlike
MOSFET’s which have bi-directional current switching capabilities
(controlled in the forward direction and uncontrolled in the reverse
direction).
The principal of operation and Gate drive circuits for the insulated gate
bipolar transistor are very similar to that of the N-channel power MOSFET.
The basic difference is that the resistance offered by the main conducting
channel when current flows through the device in its “ON” state is very
much smaller in the IGBT. Because of this, the current ratings are much
higher when compared with an equivalent power MOSFET.
The main advantages of using the Insulated Gate Bipolar
Transistor over other types of transistor devices are its high voltage
capability, low ON-resistance, ease of drive, relatively fast switching
speeds and combined with zero gate drive current makes it a good choice
for moderate speed, high voltage applications such as in pulse-width
modulated (PWM), variable speed control, switch-mode power supplies
or solar powered DC-AC inverter and frequency converter applications
operating in the hundreds of kilohertz range.
A general comparison between BJT’s, MOSFET’s and IGBT’s is given in
the following table.
IGBT Comparison Table
Device Power Power

IGBT
Characteristic Bipolar MOSFET
Voltage Rating High <1kV High <1kV Very High >1kV
Current Rating High <500A Low <200A High >500A
Current, hFE Voltage, VGS Voltage, VGE

Input Drive
20-200 3-10V 4-8V
Input Impedance Low High High
Output Impedance Low Medium Low

Switching Speed Slow (uS) Fast (nS) Medium
Cost Low Medium High
We have seen that the Insulated Gate Bipolar Transistor is

semiconductor switching device that has the output characteristics of a
bipolar junction transistor, BJT, but is controlled like a metal oxide field
effect transistor, MOSFET.
One of the main advantages of the IGBT transistor is the simplicity by
which it can be driven “ON” by applying a positive gate voltage, or
switched “OFF” by making the gate signal zero or slightly negative
allowing it to be used in a variety of switching applications. It can also be
driven in its linear active region for use in power amplifiers.
With its lower on-state resistance and conduction losses as well as its
ability to switch high voltages at high frequencies without damage makes
the Insulated Gate Bipolar Transistor ideal for driving inductive loads
such as coil windings, electromagnets and DC motors.
Applications
Because of their high-voltage and high-current characteristics, IGBTs are
used as switching devices for motor drive systems, uninterruptible power
supplies (UPS), induction cookers, and other applications.
Figure (a) shows an example of a motor drive circuit. IGBTs are widely
used as switching devices in the inverter circuit (for DC-to-AC conversion)
for driving small to large motors. IGBTs for inverter applications are used
in home appliances such as air conditioners and refrigerators, industrial
motors, and automotive main motor controllers to improve their efficiency.
Figure (b) shows an example of a UPS circuit. IGBTs are in middle- and
large-capacity (several kVA or higher-capacity) models, contributing to
high efficiency and space saving.
Figure (c) shows an example of an induction-heating (IH) circuit. Induction

heating uses LC resonance for zero-voltage switching (ZVS) or zero-
current switching (ZCS) to reduce switching loss. Because of high
resonance voltage or resonance current, IGBTs are commonly used.
Specifically, IGBT applications include induction cookers, induction rice
cookers and microwave ovens.
(a) Motor drive circuit
(b) UPS circuit
(c) Induction cooktop

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IRT POLYTECHNIC COLLEGE

Because the IGBT is a voltage-controlled device, it only requires a small

IGBT Comparison Table

Device Power Power

Voltage Rating High <1kV High <1kV Very High >1kV

Current Rating High <500A Low <200A High >500A

Current, hFE Voltage, VGS Voltage, VGE

Input Impedance Low High High

Output Impedance Low Medium Low

Cost Low Medium High

We have seen that the Insulated Gate Bipolar Transistor is

Figure (c) shows an example of an induction-heating (IH) circuit. Induction

(a) Motor drive circuit

(b) UPS circuit

(c) Induction cooktop

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