UNISONIC TECHNOLOGIES CO.

, LTD
6N60-C Power MOSFET

6.2A, 600V N-CHANNEL

POWER MOSFET

 DESCRIPTION
The UTC 6N60-C is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in switching power supplies and adaptors.

 FEATURES
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

 SYMBOL

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
6N60L-TF3-T 6N60G-TF3-T TO-220F G D S Tube
6N60L-TF1-T 6N60G-TF1-T TO-220F1 G D S Tube
6N60L-TMS-T 6N60G-TMS-T TO-251S G D S Tube
6N60L-TMS2-T 6N60G-TMS2-T TO-251S2 G D S Tube
6N60L-TMS4-T 6N60G-TMS4-T TO-251S4 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

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 MARKING

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 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 6.2 A
Continuous Drain Current ID 6.2 A
Pulsed Drain Current (Note 2) IDM 24.8 A
Single Pulsed (Note 3) EAS 310 mJ
Avalanche Energy
Repetitive (Note 2) EAR 13 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns
TO-220/TO-220F1 40 W
Power Dissipation TO-251S/TO-251S2/ PD
55 W
TO-251S4
Junction Temperature TJ +150 °C
Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 17mH, IAS = 6A, VDD = 90V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220/TO-220F1 62.5 °C/W
Junction to Ambient TO-251S/TO-251S2/ θJA
110 °C/W
TO-251S4
TO-220/TO-220F1 3.2 °C/W
Junction to Case TO-251S/TO-251S2/ θJC
2.27 °C/W
TO-251S4

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 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

UNI
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX
T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V
VDS=600V, VGS=0V 10 μA
Drain-Source Leakage Current IDSS
VDS=480V, VGS=0V, TJ =125°C 100 μA
Forward VGS=30V, VDS=0V 100 nA
Gate- Source Leakage Current IGSS
Reverse VGS=-30V, VDS=0V -100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A 1.1 1.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 650 pF
Output Capacitance COSS VDS=25V, VGS=0V, f =1.0 MHz 95 pF
Reverse Transfer Capacitance CRSS 8 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 54 ns
Turn-On Rise Time tR VDD=30V, ID=1.0A, RG=25Ω 46 ns
Turn-Off Delay Time tD(OFF) (Note 1, 2) 180 ns
Turn-Off Fall Time tF 56 ns
Total Gate Charge QG 25 nC
VDS=50V, ID=1.3A, VGS=10 V
Gate-Source Charge QGS 6.6 nC
(Note 1, 2)
Gate-Drain Charge QGD 4.9 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS=0 V, IS=6.2 A 1.4 V
Maximum Continuous Drain-Source Diode
IS 6.2 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 24.8 A
Forward Current
Reverse Recovery Time trr VGS=0 V, IS=6.2 A, 290 ns
Reverse Recovery Charge QRR dIF/dt=100 A/μs (Note 1) 2.35 μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

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6N60-C Power MOSFET

 TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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6N60-C Power MOSFET
 TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS
90%

10%
VGS
tD(ON) tD(OFF)
tR tF

Switching Test Circuit Switching Waveforms

VGS

QG
10V

QGS QGD

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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6N60-C Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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