TCET110.

(G) up to TCET4100
Vishay Telefunken

Optocoupler with Phototransistor Output

Description
The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
14925

D For appl. class I IV at mains voltage 300 V D For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.
Coll. Emitter

VDE Standards
These couplers perform safety functions according to the following equipment standards:
Anode Cath. 4 PIN 8 PIN 16 PIN

D VDE 0884
Optocoupler for electrical safety requirements

D IEC 950/EN 60950

Office machines (applied for reinforced isolation for mains voltage 400 VRMS)

D VDE 0804
Telecommunication apparatus and data processing

D IEC 65
Safety for mains-operated electronic and related household apparatus

Document Number 83503 Rev. A6, 08Sep99

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13929

TCET110.(G) up to TCET4100
Vishay Telefunken Order Instruction
Ordering Code CTR Ranking TCET1100/ TCET1100G1) 50 to 600% TCET1101/ TCET1101G1) 40 to 80% 1) TCET1102/ TCET1102G 63 to 125% TCET1103/ TCET1103G1) 100 to 200% TCET1104/ TCET1104G1) 160 to 320% 1) TCET1105/ TCET1105G 50 to 150% TCET1106/ TCET1106G1) 100 to 300% TCET1107/ TCET1107G1) 80 to 160% 1) TCET1108/ TCET1108G 130 to 260% TCET1109/ TCET1109G1) 200 to 400% TCET2100 50 to 600% TCET4100 50 to 600% 1) G = Leadform 10.16 mm; G is not marked on the body Remarks 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel

Features
Approvals:

D Creepage current resistance according

to VDE 0303/IEC 112 Comparative Tracking Index: CTI 175 D Thickness through insulation 0.75 mm D Internal creepage distance > 4 mm General features:

D BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002), Certificate number 7081 and 7402

D FIMKO (SETI): EN 60950,

Certificate number 11027

D Underwriters Laboratory (UL) 1577 recognized,

file number E-76222 Double Protection

D CSA (C-UL) 1577 recognized

file number E- 76222 - Double Protection

D VDE 0884, Certificate number 115667

VDE 0884 related features:

D CTR offered in 9 groups D Isolation materials according to UL94-VO D Pollution degree 2

(DIN/VDE 0110 / resp. IEC 664)

D Rated impulse voltage (transient overvoltage)

VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS

D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction:

Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2100/ TCET4100 optional; suffix letter G is not marked on the optocoupler D Coupling System U

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Document Number 83503 Rev. A6, 08Sep99

TCET110.(G) up to TCET4100
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW C

tp 10 ms Tamb 25C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C

tp/T = 0.5, tp 10 ms Tamb 25C

Coupler
Parameter Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 5 250 40 to +100 55 to +125 260 Unit kV mW C

2 mm from case t 10 s

C C

Document Number 83503 Rev. A6, 08Sep99

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TCET110.(G) up to TCET4100
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA

10

100

Coupler
Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF

110 0.3

Current Transfer Ratio (CTR)

Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA Type TCET1100(G)/ TCET2100/ TCET4100 TCET1101(G) TCET1102(G) TCET1103(G) TCET1104(G) TCET1101(G) TCET1102(G) TCET1103(G) TCET1104(G) TCET1105(G) TCET1106(G) TCET1107(G) TCET1108(G) TCET1109(G) Symbol CTR Min. 0.50 Typ. Max. 6.0 Unit

IC/IF

VCE = 5 V, IF = 10 mA

IC/IF

VCE = 5 V, IF = 1 mA

IC/IF

VCE = 5 V, IF = 5 mA

CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR CTR

0.40 0.63 1.0 1.6 0.13 0.22 0.34 0.56 0.5 1.0 0.8 1.3 2.0

0.8 1.25 2.0 3.2 0.30 0.45 0.70 0.90 1.5 3.0 1.6 2.6 4.0

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Document Number 83503 Rev. A6, 08Sep99

TCET110.(G) up to TCET4100
Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Input (Emitter)
Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA

Output (Detector)
Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW

Coupler
Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV C

Insulation Rated Parameters (according to VDE 0884)

Parameter Partial discharge test voltage Routine test Partial discharge test voltage g g Lot test (sample test) Insulation resistance Test Conditions 100%, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C
(construction test only) Ptot Total Power Dissipation ( mW ) 300 250 200 VPd 150 100 50 0 0
94 9182

Symbol Vpd VIOTM Vpd RIO RIO RIO

Min. 1.6 8 1.3 1012 1011 109

Typ.

Max.

Unit kV kV kV

W W W

VIOTM Phototransistor Psi ( mW ) t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s

VIOWM VIORM

IR-Diode Isi ( mA ) 0 25 50 75 100 125 150

13930

t3 ttest t4

t1

tTr = 60 s

t2

tstres

Tsi Safety Temperature ( C )

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to DIN VDE 0884

Document Number 83503 Rev. A6, 08Sep99

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TCET110.(G) up to TCET4100
Vishay Telefunken Switching Characteristics
Parameter Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure 3) g ) Symbol td tr ton ts tf toff ton toff Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 Unit ms ms ms ms ms ms ms ms

VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g )

IF

IF

+5V IC = 2 mA; adjusted through input amplitude IF

96 11698

RG = 50 W tp = 0.01 T tp = 50 ms

0 tp IC Channel I Oscilloscope Channel II 50 W 100 W RL = 1 M W 100% 90%

CL = 20 pF

95 10804

Figure 3. Test circuit, non-saturated operation

10% 0 tr td ts toff ts tf toff (= ts + tf) tf

IF

IF = 10 mA

+5V IC tp td tr ton (= td + tr)

ton pulse duration delay time rise time turn-on time

RG = 50 W tp = 0.01 T tp = 50 ms

storage time fall time turn-off time

Figure 5. Switching times

Channel I 50 W 1 kW Channel II Oscilloscope RL > 1 M W CL < 20 pF

95 10843

Figure 4. Test circuit, saturated operation

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Document Number 83503 Rev. A6, 08Sep99

TCET110.(G) up to TCET4100
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot Total Power Dissipation ( mW ) Coupled device 250 200
Phototransistor

10000 ICEO Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000

150 IR-diode 100 50 0 0 40 80 120

100

10

1 0
95 11026

25

50

75

100

96 11700

Tamb Ambient Temperature ( C )

Tamb Ambient Temperature ( C )

Figure 6. Total Power Dissipation vs. Ambient Temperature

1000.0

Figure 9. Collector Dark Current vs. Ambient Temperature

100 IC Collector Current ( mA ) VCE=5V 10

I F Forward Current ( mA )

100.0

10.0

1.0

0.1

0.1 0
96 11862

0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )
95 11027

0.1

10

100

IF Forward Current ( mA )

Figure 7. Forward Current vs. Forward Voltage

CTR rel Relative Current Transfer Ratio 2.0

Figure 10. Collector Current vs. Forward Current

100 IC Collector Current ( mA )

VCE=5V IF=5mA 1.5

20mA IF=50mA 10 10mA 5mA

1.0

2mA 1mA

0.5

0 25
95 11025

0.1 0 25 50 75
95 10985

0.1

10

100

Tamb Ambient Temperature ( C )

VCE Collector Emitter Voltage ( V )

Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature

Document Number 83503 Rev. A6, 08Sep99

Figure 11. Collector Current vs. Collector Emitter Voltage

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TCET110.(G) up to TCET4100
Vishay Telefunken
V CEsat Collector Emitter Saturation Voltage ( V ) t on / t off Turn on / Turn off Time ( m s ) 1.0 20% 0.8 CTR=50% 0.6 10 Non Saturated Operation VS=5V RL=100W

ton

6 toff 4 2 0

0.4 0.2 0 1 10 IC Collector Current ( mA ) 100

10%

0
95 11030

10

95 11028

IC Collector Current ( mA )

Figure 12. Collector Emitter Saturation Voltage vs. Collector Current

1000 CTR Current Transfer Ratio ( % ) VCE=5V 100

Figure 14. Turn on / off Time vs. Collector Current

t on / t off Turn on / Turn off Time ( m s ) 50 Saturated Operation VS=5V RL=1kW

40

30 toff 20 10 0 ton 0 5 10 15 20

10

1 0.1
95 11029

10

100
95 11031

IF Forward Current ( mA )

IF Forward Current ( mA )

Figure 13. Current Transfer Ratio vs. Forward Current Pin1 Indication Type

Figure 15. Turn on / off Time vs. Forward Current

ET1100 820UTK63
15081

Date Code (YM)

Coupling System Indicator

Company Logo

Production Location

Figure 16. Marking example

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Document Number 83503 Rev. A6, 08Sep99

TCET110.(G) up to TCET4100
Vishay Telefunken Dimensions of TCET110. in mm

14789

Dimensions of TCET110.G in mm

14792

Document Number 83503 Rev. A6, 08Sep99

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TCET110.(G) up to TCET4100
Vishay Telefunken Dimensions of TCET2100 in mm

14784

Dimensions of TCET4100 in mm

14783

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Document Number 83503 Rev. A6, 08Sep99

TCET110.(G) up to TCET4100
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 83503 Rev. A6, 08Sep99

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