DTC125TUA / DTC125TKA / DTC125TSA

Transistors

100mA / 50V Digital transistor

(with built-in resistor)
DTC125TUA / DTC125TKA / DTC125TSA

zApplications zExternal dimensions (Unit : mm)

Inverter, Interface, Driver
DTC125TUA 2.0 0.9

zFeatures 0.3 0.2 0.7

1) Built-in bias resistors enable the configuration (3)

of an inverter circuit without connecting external

1.25

2.1
input resistors.
(2) (1)
2) The bias resistors consist of thin-film resistors

0.1Min.
0.65 0.65
with complete isolation to allow negative biasing (1) Emitter
ROHM : UMT3 1.3 0.15
of the input, and parasitic effects are almost (2) Base
EIAJ : SC-70 (3) Collector
completely eliminated. Abbreviated symbol : 0A Each lead has same dimensions

3) Only the on / off conditions need to be set for

operation, making the device design easy. DTC125TKA 2.9 1.1

4) Higher mounting densities can be achieved. 0.4 0.8

(3)
zStructure
2.8
1.6
NPN epitaxial planar silicon transistor (Resistor
built-in type) (2) (1)

0.3Min.
0.95 0.95
0.15 (1) Emitter
1.9 (2) Base
ROHM : SMT3
zPackaging specifications EIAJ : SC-59
(3) Collector
Abbreviated symbol : 0A Each lead has same dimensions
Package UMT3 SMT3 SPT
Packaging type Taping Taping Taping
Code T106 T146 TP
DTC125TSA
4.0 2.0
Part No. Basic ordering unit (pieces) 3000 3000 5000
3.0

DTC125TUA − −
3Min.

DTC125TKA − −
− −
(15Min.)

DTC125TSA
0.45

2.5 0.5 0.45

zEquivalent circuit 5.0
(1) Emitter
ROHM : SPT (1) (2) (3) (2) Collector
EIAJ : SC-72 (3) Base
Abbreviated symbol : C125TS

C
B
R1
E
E : Emitter
C : Collector
B : Base

R1=200kΩ

Rev.B 1/2
 DTC125TUA / DTC125TKA / DTC125TSA
Transistors

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Collector power DTC125TUA / DTC125TKA 200
Pc mW
dissipation DTC125TSA 300
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 50 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA
Collector cutoff current ICBO − − 0.5 µA VCB=50V
Emitter cutoff current IEBO − − 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat) − − 0.3 V IC=0.5mA , IB=0.05mA
DC current transfer ratio hFE 100 250 600 − IC=1mA , VCE=5V
Input resistance R1 140 200 260 kΩ −
Transition frequency fT ∗ − 250 − MHz VCE=10V , IE= −5mA , f=100MHz
∗ Characteristics of built-in transistor

zElectrical characteristic curves

1k 1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

VCE=5V Ta=100°C IC/IB=10/1

500 500m
DC CURRENT GAIN : hFE

200 200m

100 Ta=25°C Ta= −40°C 100m Ta=100°C

50 50m Ta=25°C

20 20m
Ta= −40°C
10 10m

5 5m

2 2m
1 1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m 10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m

COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain Fig.2 Collector-Emitter saturation voltage

vs. Collector current vs. Collector current

Rev.B 2/2
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1