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    2sk2312 - Toshiba Datasheet View Download - Datasheetbank

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    RCarlos Zelaya
    The document summarizes the key specifications of the Toshiba 2SK2312 silicon n-channel MOS field effect transistor (MOSFET). It provides the part name, manufacturer, description, and lists the electrical characteristics, source-drain ratings and characteristics, and marking details in tables. The MOSFET has a drain-source breakdown voltage of 60V minimum, drain-source on resistance of 13-17 milliohms maximum, and can handle continuous and pulse drain reverse currents up to 45A and 180A respectively.

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    2sk2312 - Toshiba Datasheet View Download - Datasheetbank

    Uploaded by

    RCarlos Zelaya
    23 views1 page
    The document summarizes the key specifications of the Toshiba 2SK2312 silicon n-channel MOS field effect transistor (MOSFET). It provides the part name, manufacturer, description, and lists the electrical characteristics, source-drain ratings and characteristics, and marking details in tables. The MOSFET has a drain-source breakdown voltage of 60V minimum, drain-source on resistance of 13-17 milliohms maximum, and can handle continuous and pulse drain reverse currents up to 45A and 180A respectively.

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    The document summarizes the key specifications of the Toshiba 2SK2312 silicon n-channel MOS field effect transistor (MOSFET). It provides the part name, manufacturer, description, and lists the electrical characteristics, source-drain ratings and characteristics, and marking details in tables. The MOSFET has a drain-source breakdown voltage of 60V minimum, drain-source on resistance of 13-17 milliohms maximum, and can handle continuous and pulse drain reverse currents up to 45A and 180A respectively.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views1 page

    2sk2312 - Toshiba Datasheet View Download - Datasheetbank

    Uploaded by

    RCarlos Zelaya
    The document summarizes the key specifications of the Toshiba 2SK2312 silicon n-channel MOS field effect transistor (MOSFET). It provides the part name, manufacturer, description, and lists the electrical characteristics, source-drain ratings and characteristics, and marking details in tables. The MOSFET has a drain-source breakdown voltage of 60V minimum, drain-source on resistance of 13-17 milliohms maximum, and can handle continuous and pulse drain reverse currents up to 45A and 180A respectively.

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    © All Rights Reserved
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    Part Name 2SK2312

    2SK2312-2002 View Datashe


    et(PDF) - Toshiba
    Part Name Description MFG CO.

    TOSHIBA Field Effect Transistor


    2SK2312 Silicon N Channel MOS Type
    (L2−π−MOSV) Toshiba

    '2SK2312' PDF (6 Pages 249.6 kB )

    2 of 6

    Electrical Characteristics (Ta = 25°C)


    Characteristics Symbol Test Condition Min Typ. Max Unit

    Gate leakage current IGSS V


    GS = ±16 V, VDS = 0 V — — ±10 μA

    Drain cut−off current IDSS V


    DS = 60 V, VGS = 0 V — — 100 μA
    Drain−source breakdown voltage V (BR) DSS I
    D = 10 mA, VGS = 0 V 60 — — V

    Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V

    VGS = 4 V, ID = 25 A — 19 25
    Drain−source ON resistance RDS (ON) mΩ
    VGS = 10 V, ID = 25 A — 13 17

    Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 28 40 — S

    Input capacitance Ciss


    —
    Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz — 550 — pF

    Output capacitance Coss — 1600 —

    Rise time tr
    —
    Turn−on time ton
    —
    Switching time ns
    Fall time tf
    —
    Turn−off time toff — 180 —

    Total gate charge (Gate−source Qg — 110 —


    plus gate−drain)
    VDD ≈ 48 V, VGS = 10 V, ID = 45 A nC
    Gate−source charge Qgs
    —
    Gate−drain (“miller”) charge Qgd — 40 —

    Source–Drain Ratings and Characteristics (Ta = 25°C)


    Characteristics Symbol Test Condition Min Typ. Max Unit

    Continuous drain reverse current


    I — — — 45 A
    (Note 1) DR
    Pulse drain reverse current
    I — — — 180 A
    (Note 1)DRP

    Forward voltage (diode) VDSF I


    DR = 45 A, VGS = 0 V — — −1.7 V
    Reverse recovery time trr IDR = 45 A, VGS = 0 V — 120 — ns
    dIDR / dt = 50 A / μs
    Reverse recovered charge Qrr — 0.2 — μC

    Marking

    2 2002-02-06

    2SK2312

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