Scribd Logo
Upload

Welcome to Scribd!

  • 18 views

    Record

    Uploaded by

    URK20EC2017 Reddy Sreekar
    This experiment aims to determine the characteristics of a Gunn diode oscillator. The equipment used includes a Gunn power supply, Gunn oscillator, PIN modulator, frequency meter, variable attenuator, and oscilloscope. Gunn diodes exhibit negative resistance over a range of applied voltages due to the transferred electron effect, allowing them to function as microwave oscillators. The procedure connects the components in a block diagram and varies the Gunn bias voltage from 0-9V while recording the current, frequency, and output voltage to generate characteristic graphs of the Gunn diode. Key characteristics like threshold voltage and valley voltage/current are determined from the results.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Record

    Uploaded by

    URK20EC2017 Reddy Sreekar
    18 views5 pages
    This experiment aims to determine the characteristics of a Gunn diode oscillator. The equipment used includes a Gunn power supply, Gunn oscillator, PIN modulator, frequency meter, variable attenuator, and oscilloscope. Gunn diodes exhibit negative resistance over a range of applied voltages due to the transferred electron effect, allowing them to function as microwave oscillators. The procedure connects the components in a block diagram and varies the Gunn bias voltage from 0-9V while recording the current, frequency, and output voltage to generate characteristic graphs of the Gunn diode. Key characteristics like threshold voltage and valley voltage/current are determined from the results.

    Original Description:

    Microwave record for microwave laboratory. For btech students ECE department

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This experiment aims to determine the characteristics of a Gunn diode oscillator. The equipment used includes a Gunn power supply, Gunn oscillator, PIN modulator, frequency meter, variable attenuator, and oscilloscope. Gunn diodes exhibit negative resistance over a range of applied voltages due to the transferred electron effect, allowing them to function as microwave oscillators. The procedure connects the components in a block diagram and varies the Gunn bias voltage from 0-9V while recording the current, frequency, and output voltage to generate characteristic graphs of the Gunn diode. Key characteristics like threshold voltage and valley voltage/current are determined from the results.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views5 pages

    Record

    Uploaded by

    URK20EC2017 Reddy Sreekar
    This experiment aims to determine the characteristics of a Gunn diode oscillator. The equipment used includes a Gunn power supply, Gunn oscillator, PIN modulator, frequency meter, variable attenuator, and oscilloscope. Gunn diodes exhibit negative resistance over a range of applied voltages due to the transferred electron effect, allowing them to function as microwave oscillators. The procedure connects the components in a block diagram and varies the Gunn bias voltage from 0-9V while recording the current, frequency, and output voltage to generate characteristic graphs of the Gunn diode. Key characteristics like threshold voltage and valley voltage/current are determined from the results.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 5

    EXPERIMENT: 02

    CHARACTERISTICS OF GUNN DIODE OSCILLATOR


    Aim:
    To determine the characteristics of a Gunn diode
    Equipments:
    o Gunn Power Supply,
    o Gunn Oscillator,
    o PIN Modulator,
    o Frequency Meter,
    o Variable Attenuator, CRO,
    o Screws and Nuts, Screw Driver, Wave Guide Stands
    o Power cords , BNC & TNC Probes
    Theory:
    Gunn diodes are negative resistance devices which are normally used as low power
    oscillator at microwave frequencies in transmitter and also as local oscillator in receiver front
    ends. J B Gunn (1963) discovered microwave oscillation in Gallium arsenide (GaAs), Indium
    phosphide (InP) and cadmium telluride (CdTe).

    5
    These are semiconductors having a closely spaced energy valley in the conduction band as
    shown in Fig. (a) for GaAs.
    When a dc voltage is applied across the material, an electric field is established across it.
    At low E-field in the material, most of the electrons will be located in the lower energy central
    valley . At higher E-field, most of the electrons will be transferred in to the high-energy satellite
    L and X valleys where the effective electron mass is larger and hence electron mobility is lower
    than that in the low energy valley. Since the conductivity is directly proportional to the
    mobility, the conductivity and hence the current decreases with an increase in E-field or voltage
    in an intermediate range, beyond a threshold value Vth as shown in Fig. (b). This is called the
    transferred electron effect and the device is also called „Transfer Electron Device (TED) or Gunn
    diode‟. Thus the material behaves as negative resistance device over a range of applied voltages
    and can be used in microwave oscillators.
    In a Gunn Oscillator, the Gunn Diode is placed in a resonant cavity. In this case the
    oscillation frequency is determined by cavity dimension than by the diode itself. Although
    Gunn Oscillator can be amplitude-modulated with the bias voltage, we have used separate PIN
    modulator through PIN diode for square wave modulation.

    Text Book Reference:


     Samuel Y Liao, Microwave Devices and Circuits, 2003, Chapter7, Pg No. 287

    Block Diagram:

    GUNN POWER
    SUPPLY

    GUNN PIN VARIABLE FREQUENCY


    OSCILLATOR MODULATOR ISOLATOR ATTENUATOR METER

    WAVEGUIDE
    CRO DETECTOR

    6
    Procedure:
    1. Connections are done as shown in the block diagram
    2. The applied Gunn voltage and Gunn current values can be read from the same meter
    on the power supply by means of a change over switch.
    3. Some safety measures has to be ensured before switching on the supply. Then the
    bias is varied from 0 to 9 V in steps of 1 V. The voltage supplied should not exceed
    9V.
    4. At each value of Gunn bias, the corresponding Gunn current is noted.
    5. A graph is plotted with the voltage in the X axis and current in the Y-axis. From the
    graph, the negative resistance of Gunn diode is determined, in the region where the
    diode shows a negative differential resistance.
    6. For each Gunn Bias voltage, the frequency meter is adjusted till a „FREQUENCY
    DIP‟ occurs in the output voltage of the CRO (or) in the VSWR meter and the
    frequency has to be noted in the Frequency Meter.
    7. Draw the Gunn bias voltage Vs output voltage graph and also draw the Gunn biad
    Voltage Vs Frequency graph

    Model Graph:

    7
    8
    Observation Table:

    Gunn Bias Voltage (V) Gunn Bias Current (mA)`

    Gunn Bias Voltage (V) Frequency (GHz) Output Voltage (mV)

    Result:
    Thus the Gunn diode characteristics are obtained
    Threshold voltage =
    Threshold current =
    Valley voltage =
    Valley current =

    You might also like