Wolfspeed CPM3-1200-0016A Data Sheet External

CPM3-1200-0016A.
CPM3-1200-0016A G
Wolfspeed SiC Gen 3 MOSFET
S S S
Description
This is the Wolfspeed’s 3rd generation of high performance silicon
carbide MOSFET in a packageless bare die format to be
implemented into any custom module design. The high blocking
voltage with low on-resistance, high speed switching with low Package Types: Bare Die
PN’s: CPM3-1200-0016A
capacitance make this MOSFET ideal for high frequency switching
application including solar inverters and eVTOL.
Features Applications
• EV Chargers
• 3rd Generation SiC MOSFET
• UPS
• High blocking voltage with low on-resistance
• Solar Inverters
• High speed switching with low capacitance
• SMPS
• Fast intrinsic diode with low reverse recovery
• eVTOL
Absolute Maximum Ratings

Stress beyond those listed under absolute maximum ratings may damage the device.
Parameter Symbol Rating Unit
Drain-Source Voltage, across Tvj VDS(max) 1200 V
Maximum Gate-Source Voltage, Peak Transient Capability VGS(max) -8/+19 V

Continuous Drain Current, VGS = 15V, assumes die packaged in Tc = 25°C 115
ID A
TO-247 package with Rth(j−c) < 0.28 K/W Tc = 100°C 85
Pulsed Drain Current, tp limited by Tvj(max) ID(pulse) 250 A
Virtual Junction and Storage Temperature TVJ, Tstg -55 to +175 °C
Maximum Processing Temperature, in non-reactive ambient Tproc 325 °C
Recommended Operating Conditions
Parameter Symbol Rating Unit
Recommended Operating Gate - Source Voltage VGS(op) -4/+15 V
Rev. 03, July 2023 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power
© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.
The information in this document is subject to change without notice.
CPM3-1200-0016A. 2
Electrical Characteristics (TVJ = 25˚C)
Characteristics Symbol Min. Typ. Max. Unit Test Conditions

Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, ID =100 μA
1.8 2.5 3.6 V VDS = VGS, IDS = 21.23 mA

Gate Threshold Voltage VGS(th)
2.0 V VDS = VGS, IDS = 21.23 mA, TVJ = 175°C
Zero Gate Voltage Drain Current IDSS 1 32 μA VDS = 1200 V, VGS = 0 V
Gate-Source Leakage Current IGSS 10 100 nA VGS = 15 V, VDS = 0 V
11.2 16 20.8 VGS = 15 V, ID = 77.2 A

Drain-Source On-State Resistance RDS(on) mΩ
28.8 VGS = 15 V, ID = 77.2 A, TVJ = 175°C
53 VDS = 20 V, IDS = 77.2 A

Transconductance gfs S
47 VDS = 20 V, IDS = 77.2 A, TVJ = 175°C
Input Capacitance Ciss 6085
VGS = 0 V, VDS = 1000 V
Output Capacitance Coss 230 f = 100 kHz
pF
VAC = 25 mV
Reverse Transfer Capacitance Crss 13
Coss Stored Energy Eoss 120 μJ VDS = 1000 V, f = 100 kHz
Internal Gate Resistance RG(int) 2.6 Ω f = 1 MHz, VAC = 25 mV
Gate to Source Charge Qgs 67

VDS = 800 V, VGS = -4 V/15 V
Gate to Drain Charge Qgd 61 nC IDS = 77.2 A
Per IEC60747-8-4 pg 21
Total Gate Charge Qg 211
Reverse Diode Characteristics (TVJ = 25˚C)

Characteristics Symbol Typ. Max. Unit Test Conditions
4.6 V VGS = -4 V, ISD = 38.6 A

Diode Forward Voltage VSD
4.2 V VGS = -4 V, ISD = 38.6 A, TVJ = 175 °C
Reverse Recovery Time trr 30 ns

VGS = -4 V, ISD = 77.2 A, VR = 800 V
Reverse Recovery Charge Qrr 1238 nC
dif/dt = 4720 A/μs, TVJ = 175 °C
Peak Reverse Recovery Current Irrm 59 A
CPM3-1200-0016A. 3
Typical Performance
All the graphs are based on a die placed in a TO-247-4L package.
Figure 1. Figure 2.
Output Characteristics Tvj = -55 °C Output Characteristics Tvj = 25 °C
Figure 3. Figure 4.
Output Characteristics Tvj = 175 °C Normalized On-Resistance vs. Temperature
Figure 5. Figure 6.
On-Resistance vs. Drain Current For Various Temperatures On-Resistance vs. Temperature For Various Gate Voltages
CPM3-1200-0016A. 4
Typical Performance
Figure 7. Figure 8.
Transfer Characteristic For Various Junction Temperatures Body Diode Characteristic at Tvj = -55 °C
Figure 9. Figure 10.

Body Diode Characteristic at Tvj = 25 °C Body Diode Characteristic at Tvj = 175 °C

Threshold Voltage vs. Temperature Gate Charge Characteristics
CPM3-1200-0016A. 5
Typical Performance

3rd Quadrant Characteristic at Tvj = -55 °C 3rd Quadrant Characteristic at Tvj = 25 °C

3rd Quadrant Characteristic at Tvj = 175 °C Output Capacitor Stored Energy

Capacitances vs. Drain-Source Voltage (0-200V) Capacitances vs. Drain-Source Voltage (0-1200V)
CPM3-1200-0016A. 7
Product Ordering Information
Order Number Description Package
SIC MOSFET G3 IND 1200V/16mO

CPM3-1200-0013A-FY6 Bare Die Product
UV MLT
SIC MOSFET G3 IND 1200V/16mO

CPM3-1200-0013A-GQ8 Bare Die Product
UV MVF
Revision History
Revision History Date of Change Brief Summary
- 04/04/2019 Initial Release
• Removed test conditions and note section from the

Maximum Ratings Table
• Updated description for all the parameters in the Maximum
Ratings Table
• Updated footnotes
• Temperature note removed and embedded into every test
condition
• Updated test conditions for gate threshold voltage, drain-
source on-state resistance, transconductance, gate to
source charge, gate to drain charge, total gate charge,
1 01/09/2020 diode forward voltage, reverse recovery time, reverse
recovery charge and peak reverse recovery current
• Updated typical values for continuous drain current, zero
gate voltage drain current, gate-source leakage current,
drain-source on-state resistance, transconductance, input
capacitance, reverse transfer capacitance, Coss stored
energy, gate to source
• charge, gate to drain charge, total gate charge, reverse
recovery time and reverse recovery charge
• All junction temperatures changed to virtual junction
temperatures
2 01/06/2021 • Update Rth(j-c) from 0.4 K/W to 0.28 K/W
3 7/30/2023 • Document format updated
CPM3-1200-0016A. 8
Notes & Disclaimer

This document and the information contained herein are subject to change without notice. Any such change shall be
evidenced by the publication of an updated version of this document by Wolfspeed. No communication from any employee
or agent of Wolfspeed or any third party shall effect an amendment or modification of this document. No responsibility is
assumed by Wolfspeed for any infringement of patents or other rights of third parties which may result from use of the
information contained herein. No license is granted by implication or otherwise under any patent or patent rights of
Wolfspeed.
Notwithstanding any application-specific information, guidance, assistance, or support that Wolfspeed may provide, the buyer
of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without
limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products,
including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements.
This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the
product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to
equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical
equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control
systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities.
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your
Wolfspeed representative or from the Product Documentation sections of www.Wolfspeed.com.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact
your Wolfspeed representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance
information is also available upon request.
Contact info:
4600 Silicon Drive

Durham, NC 27703 USA
Tel: +1.919.313.5300
www.wolfspeed.com/power
PATENT: https://www.wolfspeed.com/legal/patents

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CPM3-1200-0016A.

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Drain-Source Voltage, across Tvj VDS(max) 1200 V

Maximum Gate-Source Voltage, Peak Transient Capability VGS(max) -8/+19 V

Virtual Junction and Storage Temperature TVJ, Tstg -55 to +175 °C

Maximum Processing Temperature, in non-reactive ambient Tproc 325 °C

Recommended Operating Conditions

Parameter Symbol Rating Unit

Recommended Operating Gate - Source Voltage VGS(op) -4/+15 V

Electrical Characteristics (TVJ = 25˚C)

Characteristics Symbol Min. Typ. Max. Unit Test Conditions

1.8 2.5 3.6 V VDS = VGS, IDS = 21.23 mA

Zero Gate Voltage Drain Current IDSS 1 32 μA VDS = 1200 V, VGS = 0 V

Gate-Source Leakage Current IGSS 10 100 nA VGS = 15 V, VDS = 0 V

11.2 16 20.8 VGS = 15 V, ID = 77.2 A

53 VDS = 20 V, IDS = 77.2 A

Coss Stored Energy Eoss 120 μJ VDS = 1000 V, f = 100 kHz

Internal Gate Resistance RG(int) 2.6 Ω f = 1 MHz, VAC = 25 mV

Gate to Source Charge Qgs 67

Reverse Diode Characteristics (TVJ = 25˚C)

4.6 V VGS = -4 V, ISD = 38.6 A

Reverse Recovery Time trr 30 ns

Peak Reverse Recovery Current Irrm 59 A

Figure 9. Figure 10.

Figure 11. Figure 12.

Figure 13. Figure 14.

Figure 15. Figure 16.

Figure 17. Figure 18.

Product Ordering Information

Order Number Description Package

SIC MOSFET G3 IND 1200V/16mO

SIC MOSFET G3 IND 1200V/16mO

- 04/04/2019 Initial Release

• Removed test conditions and note section from the

2 01/06/2021 • Update Rth(j-c) from 0.4 K/W to 0.28 K/W

3 7/30/2023 • Document format updated

Notes & Disclaimer

4600 Silicon Drive

The information in this document is subject to change without notice.

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