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    2 Sa 1205

    Uploaded by

    Rolando Omar Navarro
    This document provides product specifications for the 2SA1205 silicon PNP power transistor. It includes descriptions of the TO-3PN package and pin connections. Absolute maximum and characteristic ratings are given for parameters like collector current, power dissipation, and breakdown voltages. Typical values are listed for saturation voltage, current gain, transition frequency, and switching times. The package outline dimensions in millimeters are also shown.

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    © All Rights Reserved
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    2 Sa 1205

    Uploaded by

    Rolando Omar Navarro
    31 views3 pages
    This document provides product specifications for the 2SA1205 silicon PNP power transistor. It includes descriptions of the TO-3PN package and pin connections. Absolute maximum and characteristic ratings are given for parameters like collector current, power dissipation, and breakdown voltages. Typical values are listed for saturation voltage, current gain, transition frequency, and switching times. The package outline dimensions in millimeters are also shown.

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    This document provides product specifications for the 2SA1205 silicon PNP power transistor. It includes descriptions of the TO-3PN package and pin connections. Absolute maximum and characteristic ratings are given for parameters like collector current, power dissipation, and breakdown voltages. Typical values are listed for saturation voltage, current gain, transition frequency, and switching times. The package outline dimensions in millimeters are also shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    31 views3 pages

    2 Sa 1205

    Uploaded by

    Rolando Omar Navarro
    This document provides product specifications for the 2SA1205 silicon PNP power transistor. It includes descriptions of the TO-3PN package and pin connections. Absolute maximum and characteristic ratings are given for parameters like collector current, power dissipation, and breakdown voltages. Typical values are listed for saturation voltage, current gain, transition frequency, and switching times. The package outline dimensions in millimeters are also shown.

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    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1205

    DESCRIPTION
    ・With TO-3PN package
    ・High power dissipation

    APPLICATIONS
    ・For general purpose applications

    PINNING

    PIN DESCRIPTION

    1 Base
    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PN) and symbol
    3 Emitter

    Absolute maximum ratings(Ta=℃)

    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -70 V

    VCEO Collector-emitter voltage Open base -50 V

    VEBO Emitter-base voltage Open collector -6 V

    IC Collector current -12 A

    IB Base current -4 A

    PC Collector power dissipation TC=25℃ 100 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1205

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -50 V

    VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.12A -0.5 V

    ICBO Collector cut-off current VCB=-70V; IE=0 -0.1 mA

    IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA

    hFE DC current gain IC=-5A ; VCE=-0.5V 40

    fT Transition frequency IE=3A ; VCE=-12V 20 MHz

    Switching times

    ton Turn-on time 0.60 μs

    IC=-5A;RL=4Ω
    tstg Storage time IB1=-IB2=-0.12A 0.50 μs
    VCC=-20V

    tf Fall time 0.25 μs

    2
    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1205

    PACKAGE OUTLINE

    Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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