Dual-Band Vertically Stacked Laminated Waveguide F

Download as pdf or txt
Download as pdf or txt
You are on page 1of 10

See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/224442455

Dual-Band Vertically Stacked Laminated Waveguide Filter Design in LTCC


Technology

Article in IEEE Transactions on Microwave Theory and Techniques · July 2009


DOI: 10.1109/TMTT.2009.2020833 · Source: IEEE Xplore

CITATIONS READS
82 783

3 authors, including:

Ruey-Beei Wu
National Taiwan University
282 PUBLICATIONS 4,947 CITATIONS

SEE PROFILE

Some of the authors of this publication are also working on these related projects:

You do not need to know that. View project

All content following this page was uploaded by Ruey-Beei Wu on 19 February 2015.

The user has requested enhancement of the downloaded file.


1554 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 6, JUNE 2009

Dual-Band Vertically Stacked Laminated Waveguide


Filter Design in LTCC Technology
Bo-Jiun Chen, Tze-Min Shen, and Ruey-Beei Wu, Senior Member, IEEE

Abstract—A new design method of dual-band filters with lami- with high performance, low cost, and compact size become es-
nated waveguide (or substrate integrated waveguide) is proposed sential components and are highly demanded. Several methods
by taking advantage of the existence of multiple cavity modes. The for designing dual-band filters have been proposed in the liter-
major design concept is adequately choosing geometric shape of
laminated waveguide resonators to control the frequency bands, ature. One intuitive way is to combine two independent single
and positions of open slots and feeding probes to realize the desired passband filters with an extra impedance network [1]. Alterna-
coupling coefficients and external quality factors at both bands si- tively, the dual bands can be realized from the cascaded connec-
multaneously. Two design examples with third-order and quasi-el- tion of a wideband bandpass filter and a bandstop filter [2], [3].
liptic filter responses are given and verified by experiments. By
using the low-temperature co-fired ceramic technology, the lami-
This design is suitable for two closely spaced wide passbands,
nated waveguide resonators are vertically stacked, and the filter but has the disadvantages of relatively poor return loss and large
size can be miniaturized. layout area.
Index Terms—Coupling coefficient, dual-band filter, external Recently, the method of the coupling matrix has been com-
quality factor, laminated waveguide, low-temperature co-fired ce- monly used for bandpass filter design [4]. The dual-band filters
ramic (LTCC) technology, substrate integrated waveguide (SIW). can be obtained by adjusting coupling matrix to introduce one
or two pairs of transmission zeros inside the passband, thereby
splitting the original single band into two or three [5]–[7]. This
I. INTRODUCTION method calls for significant computational efforts, and the two
ODAY, wireless communication systems are proceeding bands must be adjacent to each other. A more versatile design
T toward high stability, high reliability, and high integrity.
The demand for wider frequency bandwidth is increasing with
is to utilize coupled dual-frequency resonators, such as stepped-
impedance resonators (SIRs) [8]–[13]. Efforts should be put to
the emergence of a multitude of multimedia applications, in meet the coupling coefficients at both bands simultaneously.
particular, ultra-high data-rate personal data networking and Therefore, the design degree of freedom is somewhat limited,
point-to-point or point-to-multipoint data link. It has pushed and because of which, this concept can hardly extend to mul-
the development of technologies and systems operating at tipassband filters. One promising remedy is the introduction of
the higher microwave or even millimeter-wave frequencies. alternatively cascaded coupling structure [14], which adds extra
For example, the availability of unlicensed industrial–scien- resonators to improve the controllability of the coupling coeffi-
tific–medical (ISM) bands in the 60-GHz spectrum represents cients. However, adding extra resonators may result in a larger
a great opportunity of several applications, e.g., wireless circuit size, and sometimes increase the design complexity.
high-definition multimedia interface (HDMI) for uncom- On the other hand, the laminated waveguide, or equivalently,
pressed high-definition TV signal transmission and wireless substrate integrated waveguide (SIW) devices have become
gigabit file download for mobile device, like wireless USB3.0, popular in recent years [15], [16]. The transitions between
wireless ducking station, and portable multimedia devices. This microstrip and SIW are widely studied [17]–[19], which make
trend has been reinforced by the exponentially growth of intelli- the planar circuit integration with SIW more easily. The SIW
gent transportation applications, e.g., highway exchange-traded filters are also well developed lately [20]–[26], having not
fund (ETC) systems and automotive surveillance or collision only the advantages of traditional waveguide filters such as
avoidance radar systems. high quality factor and low loss, but also easy integration with
Corresponding to this trend, dual-band systems are devel- planar circuits. They stand on a vantage point because the
oped to meet the communication demands. In order to con- coupling coefficients can be controlled accurately at both bands
trol the RF/microwave channel characteristics, dual-band filters by slots or via spacing. A dual-band SIW filter has already
been presented in [27] using inverter coupled resonator sec-
tions to generate multiband response and transmission zeros.
Manuscript received October 16, 2008; revised February 04, 2009.
First published May 12, 2009; current version published June 10, 2009. However, the circuit size is large because the inverter coupled
This work was supported by the National Science Council under Grant resonator sections use two or three resonators to achieve dual-
NSC96-2219-E-002-017 and by the Ministry of Education under Grant or triple-band resonance, and the passbands must be close to
97R0062-03.
The authors are with the Department of Electrical Engineering and Graduate each other.
Institute of Communication Engineering, National Taiwan University, Taipei, In this study, the existence of multiple resonant modes in the
Taiwan 10617 (e-mail: rbwu@ew.ee.ntu.edu.tw) cavity formed by the SIW is fully exploited to ease the design
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org. of dual-band filters. Two design examples are given and the
Digital Object Identifier 10.1109/TMTT.2009.2020833 design methods are described. This paper is organized as fol-
0018-9480/$25.00 © 2009 IEEE
CHEN et al.: DUAL-BAND VERTICALLY STACKED LAMINATED WAVEGUIDE FILTER DESIGN IN LTCC TECHNOLOGY 1555

Fig. 1. (a) Geometry of a rectangular cavity resonator. (b) Magnetic and


(c) electric field patterns of TE (left) and TE (right) modes.

lows. Section II describes the characteristics of SIW resonators.


Sections III and IV provide the design procedures for dual-
band filters with third-order and quasi-elliptic responses. Fi-
nally, Section V draws some conclusions. Fig. 2. (a) Simplified configuration of a third-order filter. (b) Its side view.

II. ANALYSIS OF DUAL-BAND RESONATOR


a weak even null coupling at the mode. When two res-
Fig. 1 shows the geometry of a rectangular resonant cavity,
onators are vertically stacked with slots perforated in regions A
where , , and are the cavity’s length, width, and height,
and B, the slot in region B enhances the coupling at both modes,
respectively. The resonant frequency of the or
but the slot in region A only enhances the coupling at
mode is decided by
mode. By adjusting these two slot lengths, the coupling coeffi-
cients at both modes can be controlled easily.
(1) Since the existence of slot A enhances the coupling at the
mode, this represents some limitation in the controlling
where , , and are relative permeability and rel- the coupling mechanism in the two bands. If the desired cou-
ative permittivity of the cavity substrate, is speed of light in pling at is much smaller than that at , it would be
free space, and , , and are mode numbers of the resonator. hardly achievable by this mechanism.
Since the substrate is very thin, only TE modes need be con-
sidered in most applications. The wavenumber is zero, and III. THIRD-ORDER DUAL-BAND FILTER
and are natural integers. By properly selecting the length and Consider first a design example of third-order dual-passband
width , the two lowest resonant modes and can filter, shown in Fig. 2, in which the shorting vias to enclose the
be controlled to resonate at two desired frequencies and , cavities are neglected and the dimensions in the vertical direc-
respectively, with frequency ratio tion are enlarged for clarity. This filter contains three rectangular
resonators. Resonators 1 and 3 are arranged side by side hori-
zontally, while resonator 2 is stacked underneath vertically. The
signal is fed by a microstrip line, through a via-probe, into the
(2)
resonators. The direct couplings between resonators 1 and 2, and
between resonators 2 and 3 are realized by slots on the common
broad walls, while the cross coupling between resonators 1 and
The magnetic field patterns of a rectangular cavity resonator 3 is controlled by the spacing of vias on their common narrow
in and modes are shown in Fig. 1(b). The mag- wall.
netic field in region A is strong for the mode, but weak This filter is fabricated by low-temperature co-fired ceramic
for the mode. Therefore, when a slot is opened in region (LTCC) technology on the substrate with relative dielectric con-
A, it causes a strong magnetic coupling at the mode and stant 7.8 and loss tangent 0.0078. The fabrication process pro-
1556 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 6, JUNE 2009

vides ten layers in which the upper four layers are of thickness
94 m each, and lower six layers are 46 m. The via diam-
eter is 75 m. The surface metallization is solderable silver and
the layers utilization stack-up is described in Fig. 2(b). The mi-
crostrip feeding lines utilize the first layer, resonators 1 and 3
occupy layers 2–4, and resonator 2 occupies the remaining six
layers.
This filter is designed to operate at two passbands centered at
30 and 35 GHz with fractional bandwidths of 4.5% and 4.1%,
respectively. The design is challenging if to be implemented by
SIRs since the two passbands are close to each other. For the
present design, the first step is to determine the size of cavity.
They are found to be mm and mm from (1)
and (2) in order to resonate at the above two frequencies.
The second step is to obtain the design parameters. They
are initially acquired based on low-pass prototype values of the
third-order Chebyshev frequency response with a 0.1-dB ripple
level. A cross coupling path is then introduced to achieve the
transmission zero in the desired trisection response. Since the
direct coupling and cross coupling are both magnetic couplings,
the transmission zeros appear at the upper side of the passband
[4]. The Chebyshev low-pass prototype values are , Qe
Fig. 3. (a) Structure for extracting . (b) Associated design curves with length
, and . Given fractional band- a = 5:14 mm and width b = 1:9 mm.

width and , the corresponding coupling ma-


trices and external quality factors can be calculated by [4]
band will increase and that of the higher band will decrease.
(3) The case reverses when the feeding position is away from the
center of the resonator, but still in region C where is
and thus, stronger and is weaker. The antipad size affects external
quality factors at both bands. When antipad size increases,
the external quality factors at both bands become smaller, and
vice versa.
By these two design parameters, the fractional bandwidth can
be controlled with more freedom. Fig. 3(b) shows the external
quality factor versus feeding position with different antipad
size as a parameter. The solid and dashed lines represent the
results for the first and second passbands, respectively.
and
For the design of slot perforation, the couplings between res-
(4) onators 1 and 2 are controlled by two slots on the common broad
wall, as shown in Fig. 4(a). Slot 1 is at the center of broadside,
where superscripts and are used to distinguish the two pass- i.e., in region A of Fig. 1(b), and slot 2 is at the quarter of broad-
bands. side. In this case, slot 2 will cause magnetic couplings at both
Related to the mode patterns at the two resonant frequen- bands, while slot 1 will mainly cause magnetic coupling at the
cies, the third step is to realize the coupling coefficients and first band only since the mode pattern is a null at slot
external quality factors by a suitable design of the slot perfora- 2. In the design procedure, slot 2 should be first considered to
tion and the feeding position. The feeding via-probe should be meet the desired coupling coefficient at the second band. Slot 1
located where the electric field intensity is strong. The stronger is then considered to supplement the coupling coefficient at the
the electric field, the smaller the external quality factor, and thus first band since it hardly affects the coupling at the second band.
the wider the fractional bandwidth. In order to excite the res- Fig. 4(b) shows the design graph of coupling coefficients
onator at both modes, the feeding position should be chosen at versus , length of slot 2, with , length of slot 1, as a
the places where the two modes’ electric field overlapped, e.g., parameter. The solid and dashed lines represent the results for
at region C in Fig. 1(c). Hence, there are two design parame- the first and second bands, respectively. It can be found that slot
ters shown in Fig. 3(a) to control the external quality factors: 1 causes little coupling at the second band as expected since
the feeding position and the antipad size . the dashed lines with different ’s almost overlap.
When the feeding position is closer to the center of resonator, Fig. 5(a) shows the final filter configuration after optimiza-
the mode’s electric field is stronger, while is tion with sidewalls realized by vias [16]. The filter size is 5 mm
weaker. Therefore, fractional bandwidth of the lower frequency 4 mm 0.652 mm, i.e., , where
CHEN et al.: DUAL-BAND VERTICALLY STACKED LAMINATED WAVEGUIDE FILTER DESIGN IN LTCC TECHNOLOGY 1557

Fig. 6. Photograph of the third-order filter.

M
M M L :; :;
Fig. 4. (a) Structure for extracting and (b) associated design curves for
4  for 1 = 0 2 0 3
:
The results marked with , , and denote
and 0 4 mm respectively.

S
Fig. 7. (a) Simulated and measured -parameters of the third-order filter.
(b) Wideband responses. (c) Group delay.

The filter performance is characterized through on-wafer


coplanar ground–signal–ground (GSG) probes. As shown in
Fig. 6, two ground pads at both sides of each feeding microstrip
line are connected to the ground plane by vias. The filter
including ground pads is measured on an Agilent E8361A net-
Fig. 5. (a) Final configuration and (b) dimensions of the third-order filter. work analyzer using short-open-load-thru (SOLT) calibration.
The simulated and measured -parameters are shown in
Fig. 7(a) and (b). The “ideal” -parameters in Fig. 7(a) de-
is the wavelength of a 50- microstrip line at 30 GHz. Other note the responses calculated from coupling matrices directly.
dimensions are shown in Fig. 5(b). A photograph of this filter is Compared to the simulated results by Ansoft’s High Frequency
shown in Fig. 6. Structure Simulator (HFSS) v.10, the measured responses in
1558 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 6, JUNE 2009

narrow wall, direct coupling between resonators 2 and 3 through


the slot opening on the broad wall, and cross coupling between
resonators 1 and 4 through aperture on the broad wall.
This filter is also designed on LTCC with the same substrate
and metal, but a more advanced fabrication process, which pro-
vides 16 layers of thickness 52 m each. The via diameter is still
75 m. The layers utilization stack-up is described in Fig. 8(b).
The microstrip feeding lines utilize layers 1, 2, 15, and 16, and
resonators 1 and 2 occupy layers 3–8, and resonators 3 and 4
occupy layers 9–14.
This filter is designed to operate at 30 and 39 GHz with frac-
tional bandwidths set at 6% both. For this design, the resonator
size is mm and mm from (1) and (2). For
a typical quasi-elliptic response with normalized transmission
zeros positioned at , the low-pass prototype values
are , , ,
, and [4]. The corresponding
coupling matrices and external quality factors can be calculated
by

(5)
Fig. 8. (a) Simplified configuration of the quasi-elliptic filter. (b) Its side view.

Since the bandwidths and responses are chosen to be the same


Fig. 7(a) are shifted by 0.5 GHz. The designed operational at both bands, the coupling matrices and external quality factors
frequencies are 30 and 35 GHz, while the measured ones are are the same at both bands and are given by
29.47 and 34.54 GHz. The insertion losses are 4.5 and 5.1 dB
at the two bands, respectively, which are about 0.5 dB larger
than those predicted by simulation. The errors are conjecturally
caused by the errors of the substrate dielectric constant and loss
tangent, and also the manufacturing tolerances and fabrication (6)
errors such as material shrinkage. In the wideband response
in Fig. 7(b), it is noticed that there is spurious response at
42.5 GHz, which is caused by the mode of the resonator. The feeding mechanism of this filter is similar to the previous
The measured and simulated results of group delay are shown one and is not repeated here. The external quality factor design
in Fig. 7(c). It is found that the group delay is flat in the two graph is shown in Fig. 9(b) with other notations the same as
passbands with a slight increase of, at most, 0.2 ns near the Fig. 3. The couplings between resonators 1 and 2 are controlled
skirt off. by the three windows on the common narrow wall, as shown in
Fig. 10(a). Window 1 denotes the center one, while windows 2
IV. FOURTH-ORDER QUASI-ELLIPTIC DUAL-BAND FILTER and 3 are windows at the two sides with the same width . It is
A fourth-order quasi-elliptic dual-band filter is then devel- worthy noting that windows 2 and 3 cause magnetic couplings at
oped to demonstrate the capability in the enhancement of pass- both bands, and window 1 mainly causes magnetic coupling at
band selectivity. Fig. 8(a) shows a simplified configuration of the first band at the mode of the cavity only. This can also
the filter with exaggerated dimensions in vertical direction for be easily shown from the dashed design curves in Fig. 10(b),
clarity. It contains four rectangular resonators, with resonators which depicts little dependence on the coupling coefficients on
1 and 2 arranged side by side at the upper layer and resonators 3 . Such property can greatly alleviate the selection of dimen-
and 4 directly beneath at the lower layer. The signal is also fed sion parameters to realize the desired filter responses at both
by a microstrip line, through a via-probe, into the resonators. bands.
There are direct couplings between resonators 1 and 2, and be- The couplings between resonators 2 and 3 are controlled by
tween resonators 3 and 4 through the windows on the common the two slots on common broad metal, as shown in Fig. 11(a).
CHEN et al.: DUAL-BAND VERTICALLY STACKED LAMINATED WAVEGUIDE FILTER DESIGN IN LTCC TECHNOLOGY 1559

Fig. 11. (a) Structure for extracting M . (b) Associated design curves of the
quasi-elliptic filter. The results marked with , 4, and denote M L1 =
Q . (b) Associated design curves of the 0:65;0:6;
for
Fig. 9. (a) Structure for extracting 0:55
a = 3:73 mm and width b = 2:03 mm.
and mm, respectively.
quasi-elliptic filter with length

Fig. 10. (a) Structure for extracting M . (b) Associated design curves of the
quasi-elliptic filter. The results marked with , 4, and denote M forW1 =
0:55; 0:5; and 0:45 mm, respectively.

The coupling mechanism is similar to that in the previous de-


sign. Since slot 1 is cut near the center of broad side where the Fig. 12. (a) Structure for extracting M and (b) associated design curves of
the quasi-elliptic filter. The results marked with , , 4, and } denote M
electric field for the mode is small, the desired coupling forS = 0:7;0:6;0:5; 0:4
and mm, respectively.
coefficient at the higher band can be almost exclusively deter-
mined by slot 2 near the center of the narrow side. After the
length of slot 2, , is designed from the requirement at the The electric cross-coupling path between resonators 1 and 4
higher band, the length of slot 1, , can be determined so that is provided by the aperture on the common broad wall, as shown
the desired coupling coefficients at both bands can be satisfied in Fig. 12(a). The position of the aperture should be located at
simultaneously. Nonetheless, the coupling coefficients versus places with significant electric fields at both and
with as a parameter are shown in Fig. 11(b) to facilitate modes. Similar to the feeding mechanism, when a strong electric
the design. coupling is demanded at the mode, the aperture should
1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 6, JUNE 2009

Fig. 13. (a) Final configuration. (b) Dimensions of the quasi-elliptic filter.

Fig. 14. (a) Simulated and measured responses of the quasi-elliptic filter.
be along the center of the narrow side. While the aperture size (b) Wideband responses. (c) Group delay.
can control the coupling strength at both bands simultaneously,
the relative strength can be adjusted by the shift in Fig. 12(a).
The design curves of the coupling coefficients at the two bands
versus the shift with aperture size as a parameter are shown
in Fig. 12(b).
The final configuration of the filter is shown in Fig. 13(a). It
is also noted that a transition is added for measurement consid-
eration. The size of this filter without the transition is 4.12 mm
3.92 mm 0.832 mm, i.e., .
Other dimensions are shown in Fig. 13(b). Fig. 15. Photograph of the quasi-elliptic filter.
The simulated and measured -parameters and group delays
are shown in Fig. 14. The measured central frequencies are 30.3
and 39.3 GHz, and insertion losses are 4.8 dB at both bands, V. DISCUSSION AND CONCLUSIONS
which are about 1 dB larger than simulation predicts. The errors In this paper, dual-band filters using laminated waveguide
are also conjecturally caused by the errors of the substrate di- and LTCC technology have been provided. By utilizing the
electric constant and loss tangent, the manufacturing tolerances, characteristics of different mode field patterns, the coupling
and fabrication errors such as material shrinkage. The maximum coefficients and external quality factors can be adjusted more
in-band group-delay deviation is less than 0.4 ns. The spurious easily and flexibly to implement the dual-band filters with
responses are also mainly caused by the mode. A photo- more dynamic specifications at both passbands. Moreover, the
graph of this filter is shown in Fig. 15. resonators of the filter can be vertically stacked to minimize the
CHEN et al.: DUAL-BAND VERTICALLY STACKED LAMINATED WAVEGUIDE FILTER DESIGN IN LTCC TECHNOLOGY 1561

circuit size by taking advantage of LTCC technology. The de- [11] M. H. Weng, H. W. Wu, and Y. K. Su, “Compact and low loss dual-
sign theory has been verified by simulations and measurements. band bandpass filter using pseudo-interdigital stepped impedance res-
onators for WLANs,” IEEE Microw. Wireless Compon. Lett., vol. 17,
Compared with [27], the area of the present third-order filter no. 3, pp. 187–189, Mar. 2007.
is only 60%, and that of the fourth-order filter is only 50%, it is [12] S. Sun and L. Zhu, “Novel design of dual-band microstrip bandpass
scaled by the operation frequency and material dielectric con- filters with good in-between isolation,” in Proc. Asia–Pacific Microw.
Conf., China, Dec. 2005, pp. 729–732.
stant. Also, examples in [27] only present passbands within a [13] S. Sun and L. Zhu, “Coupling dispersion of parallel-coupled mi-
very close region. The present approach has larger flexibility in crostrip lines for dual-band filters with controllable fractional pass
frequency selectivity. bandwidths,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2005, pp.
2195–2198.
It is also interesting to compare the present approach with [14] C.-F. Chen, T.-Y. Huang, and R.-B. Wu, “Design of dual- and triple-
other dual-band designs based on the SIR, e.g., [9] and [14]. passband filters using alternately cascaded multiband resonators,”
The coupling mechanism based on the SIR is basically 1-D, i.e., IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pp. 3550–3558,
Dec. 2006.
along the transmission line (say, the -direction). However, the
[15] F. Shigeki, “Waveguide line,” (in Japanese) Japan Patent 06-053 711,
coupling mechanism in the present approach can be exercised Feb. 25, 1994.
in both - and -directions and is 2-D. Hence, there is more [16] H. Uchimura, T. Takenoshita, and Fujii, “Development of a laminated
flexibility in the selective control of coupling at different bands. waveguide,” IEEE Trans. Microw. Theory Tech., vol. 46, no. 12, pp.
2438–2443, Dec. 1998.
Moreover, the laminated waveguide resonators have six surfaces [17] Y. Huang, K.-L. Wu, and M. Ehlert, “An integrated LTCC laminated
for coupling design by slots or via opening. This also makes the waveguide-to-microstrip line T-junction,” IEEE Microwave Wireless
vertical stacking for size miniaturization possible. Compon. Lett., vol. 13, no. 8, pp. 338–339, Aug. 2003.
[18] C.-K. Yau, T.-Y. Huang, T.-M. Shen, H.-Y. Chien, and R.-B. Wu, “De-
Although and modes are used to construct the sign of 30 GHz transition between microstrip line and substrate in-
dual-band filters in this paper, it is viable to employ other modes tegrated waveguide,” in Proc. Asia–Pacific Microw. Conf., Bangkok,
as well. For example, the and modes can be used Thailand, Dec. 2007, pp. 243–246.
[19] T.-H. Yang, C.-F. Chen, T.-Y. Huang, C.-L. Wang, and R.-B. Wu,
to realize two passbands, which are close to each other, while “A 60 GHz LTCC transition transition between microstrip line and
the spurious modes by other modes are reasonably far away. substrate integrated waveguide,” in Proc. Asia–Pacific Microw. Conf.,
The proposed approach can also be extended to multiband filters Suzhou, China, Dec. 2005, pp. 469–471.
[20] X. P. Chen, W. Hong, T. Cui, J. Chen, and K. Wu, “Substrate integrated
by taking advantage of more higher order modes in SIW cavi- waveguide (SIW) linear phase filter,” IEEE Microw. Wireless Compon.
ties, which can be of more complicated shape. This deserves Lett., vol. 15, no. 11, pp. 787–789, Nov. 2005.
further exploitation. As a result, these compact-size filter cir- [21] H.-Y. Chien, T.-M. Shen, T.-Y. Huang, and R.-B. Wu, “Design of a ver-
tically stacked substrate integrated folded-waveguide resonator filter in
cuits are suitable for -band multiband applications or higher LTCC,” in Proc. Asia–Pacific Microw. Conf., Bangkok, Thailand, Dec.
frequency bands in the future. 2007, pp. 675–678.
[22] T.-M. Shen, T.-Y. Lin, T.-Y. Huang, and R.-B. Wu, “A vertically
stacked quasi elliptic waveguide filter with crossly coupling vias,” in
REFERENCES Proc. Asia–Pacific Microw. Conf., Bangkok, Thailand, Dec. 2007, pp.
667–670.
[1] H. Miyake, S. Kitazawa, T. Ishizaki, T. Yamada, and Y. Nagatom, “A [23] T.-M. Shen, C.-F. Chen, T.-Y. Huang, and R.-B. Wu, “Design of verti-
miniaturized monolithic dual band filter using ceramic lamination tech- cally stacked waveguide filters in LTCC,” IEEE Trans. Microw. Theory
nique for dual mode portable telephones,” in IEEE MTT-S Int. Microw. Tech., vol. 55, no. 8, pp. 1771–1779, Aug. 2008.
Symp. Dig., Jun. 1997, vol. 2, pp. 789–792. [24] R. Valois, D. Baillargeat, S. Verdeyme, M. Lahti, and T. Jaakola,
[2] L. C. Tsai and C. W. Hsue, “Dual-band bandpass filters using “LTCC technology for 40 GHz bandpass waveguide filter,” in IEEE
equal-length coupled-serial-shunted lines and Z -transform tech- MTT-S Int. Microw. Symp. Dig., Jun. 2005, pp. 953–956.
nique,” IEEE Trans. Microw. Theory Tech., vol. 52, no. 4, pp. [25] X. P. Chen and K. Wu, “Substrate integrated waveguide cross-coupled
1111–1117, Apr. 2004. filter with negative coupling structure,” IEEE Trans. Microw. Theory
[3] K. Li, D. Kurita, and T. Matsui, “Dual-band ultra-wideband band- Tech., vol. 56, no. 1, pp. 142–149, Jan. 2008.
pass filter,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp. [26] J. A. Ruiz-Cruz, M. A. EL Sabbagh, K. A. Zaki, J. M. Rebollar, and
789–792. Y. Zhang, “Canonical ridge waveguide filters in LTCC or metallic
[4] J. S. Hong and M. J. Lancaster, Microstrip Filter for RF/Microwave resonators,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 1, pp.
Applications. New York: Wiley, 2001, ch. 8. 174–182, Jan. 2005.
[5] J. Lee, M. S. Uhm, and I. B. Yom, “A dual-passband filter of canonical [27] X. P. Chen, K. Wu, and Z. L. Li, “Dual-band and triple-band sub-
structure for satellite applications,” IEEE Microw. Wireless Compon. strate integrated waveguide filters with Chebyshev and quasi-elliptic
Lett., vol. 14, no. 6, pp. 271–273, Jun. 2004. responses,” IEEE Trans. Microw. Theory Tech., vol. 55, no. 12, pp.
[6] M. Mokhtaari, J. Bornemann, and S. Amari, “Coupling-matrix design 2569–2577, Dec. 2007.
of dual/triple-band uni-planar filters,” in IEEE MTT-S Int. Microw. [28] J. S. Hong and M. J. Lancaster, Microstrip Filter for RF/Microwave
Symp. Dig., Jun. 2006, pp. 515–518. Applications. New York: Wiley, 2001, ch. 3.
[7] J. Lee, M. S. Uhm, and I. B. Yom, “Synthesis of a self-equalized dual-
passband filter,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 4,
pp. 271–273, Apr. 2005.
[8] J. T. Kuo, T. H. Yeh, and C. C. Yah, “Design of microstrip bandpass Bo-Jiun Chen was born in Taipei, Taiwan, on July
filters with a dual-passband response,” IEEE Trans. Microw. Theory 18, 1984. He received the B.S. degree in electrical
Tech., vol. 53, no. 4, pp. 1331–1337, Apr. 2005. engineering and M.S. degree in communication en-
[9] J. T. Kuo and H. S. Cheng, “Design of quasi-elliptic function filters gineering from National Taiwan University, Taipei,
with a dual-passband response,” IEEE Microw. Wireless Compon. Lett., Taiwan, in 2006 and 2008, respectively.
vol. 14, no. 10, pp. 472–474, Oct. 2004. He is currently a Research Technician with the
[10] C. Y. Chen, C. Y. Hsu, and H. R. Chuang, “Design of miniature Center for Information and Electronics Technologies,
planar dual-band filter using dual-feeding structures and embedded National Taiwan University. His research interest is
resonators,” IEEE Microwave Wireless Compon. Lett., vol. 16, no. 12, the design of microwave and millimeter-wave filters.
pp. 669–671, Dec. 2006.
1562 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 57, NO. 6, JUNE 2009

Tze-Min Shen was born in Chiayi, Taiwan, on Au- Ruey-Beei Wu (M’91–SM’97) received the B.S.E.E.
gust 5, 1981. He received the B.S. degree in electrical and Ph.D. degrees from National Taiwan University,
engineering and M.S. degree in communication en- Taipei, Taiwan, in 1979 and 1985, respectively.
gineering from National Taiwan University, Taipei, In 1982, he joined the faculty of the Department of
Taiwan, in 2004 and 2006, respectively, and is cur- Electrical Engineering, National Taiwan University,
rently working toward the Ph.D. degree in communi- where he served as the Chairperson from 2004 to
cation engineering at National Taiwan University. 2007 and is currently a Professor. From March
His research interest is the design of microwave 1986 to February 1987, he was a Visiting Scholar
and millimeter-wave filters. with IBM, East Fishkill, NY. From August 1994 to
July 1995, he was with the Electrical Engineering
Department, University of California at Los Angeles
(UCLA). From 1998 to 2000, he was also Director of the National Center for
High-Performance Computing, and has served as Director of Planning and
Evaluation Division since November 2002, both under the National Science
Council. His areas of interest include computational electromagnetics, trans-
mission line and waveguide discontinuities, microwave and millimeter-wave
planar circuits, and interconnection modeling for computer packaging.
Dr. Wu has been an associate editor for the IEEE TRANSACTIONS ON
MICROWAVE THEORY AND TECHNIQUES since 2004. Since 2007, he has been
the chair of the IEEE Taipei Session.

View publication stats

You might also like