NAME:______________________________________

    PUID:  ______________________________________  
 
 
ECE  305  Exam  6  SOLUTIONS  Spring  2015  
May  7,  2015  
Mark  Lundstrom  
Purdue  University  
 
This  is  a  closed  book  exam.    You  may  use  a  calculator  and  the  formula  sheet  at  the  end  of  
this  exam.    Following  the  ECE  policy,  the  calculator  must  be  a  Texas  Instruments  TI-­‐30X  
IIS  scientific  calculator.  
 
There  are  three  equally  weighted  questions.    To  receive  full  credit,  you  must  show  your  
work.  
 
The  exam  is  designed  to  be  taken  in  50  minutes  –  just  like  Exams  1-­‐5,  but  you  will  have  the  
entire  2  hours  to  complete  it.  
.  
 
Be  sure  to  fill  in  your  name  and  Purdue  student  ID  at  the  top  of  the  page.  
 
DO  NOT  open  the  exam  until  told  to  do  so,  and  stop  working  immediately  when  time  is  
called.  
 
The  last  page  is  an  equation  sheet,  which  you  may  remove,  if  you  want.  
 
 
75  points  possible,  10  per  question  
 
1)   25  points  (5  point  per  part)  
 
2)   25  points  (5  points  per  part)  
 
3)   25  points  (5  points  per  part)  
 
 
 
 
 
-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐  Course  policy    -­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐-­‐  
 
I  understand  that  if  I  am  caught  cheating    in  this  course,  I  will  earn  an  F  for  the  course  and  
be  reported  to  the  Dean  of  Students.  
 
 
 
Read  and  understood:   ______________________________________________  
            signature  
ECE-­‐305     1   Spring  2015  
 Exam  6:  ECE  305   Spring  2015  
Answer  the  multiple  choice  questions  below  by  circling  the  one,  best  answer.  
   
1a)   Which  of  the  following  would  reduce  “base  width  modulation”  (i.e.  the  Early  effect)  
and,  therefore,    increase  the  output  resistance?  
a)   Increasing  the  emitter  doping.  
b)   Increasing  the  collector  doping.  
c) Increasing  the  base  width.  
d)   Increase  the  emitter  thickness.  
e)   Decrease  the  base  doping.  
 
 
1b)   If  the  emitter  injection  efficiency  is  0.97,  what  is  beta?  (Assume  active  region  of  
operation  and  a  base  transport  factor  of  one.)  
a)   0.97.  
b)   0.03.  
c)   32.  
d)   323.  
e)   97.  
 
 
1c)   What  is  the  order  of  highest  doping  density,  next  highest,  and  lowest  doping  density  
in  a  conventional  BJT?  
a)   Emitter,  base,  collector.  
b)   Emitter,  collector,  base  
c)   Base,  emitter,  collector.  
d)   Base,  collector,  emitter.  
e)   Collector,  base,  emitter.  
 
 
1d)   How  are  the  PN  junctions  biased  in  the  saturation  region  of  a  PNP  BJT?  
a)    Emitter-­‐base:  forward-­‐biased,  Base-­‐collector:    forward-­‐biased.  
b)    Emitter-­‐base:  forward-­‐biased,  Base-­‐collector:    reverse-­‐biased.  
c)    Emitter-­‐base:  reverse-­‐biased,  Base-­‐collector:    forward-­‐biased.  
d)    Emitter-­‐base:  reverse-­‐biased,  Base-­‐collector:    reverse-­‐biased.  
e)    Emitter-­‐base:  reverse-­‐biased,  Base-­‐collector:    zero-­‐biased.  
 
 
1e)   If  the  emitter  injection  efficiency  is  1.00  and  the  base  transport  factor  is  0.98,  the  
collector  current  is   100 µA ,  what  is  the  base  current?  (Assume  active  region  of  
operation.)  
a)     1 µA .  
b)     2 µA .  
c)     3 µA .  
d)     4 µA .  
e)     5 µA .  
ECE-­‐305     2   Spring  2015  
  
Exam  6  ECE  305   Spring    2015  
 
2)   The  figure  below  is  a  sketch  of  the  excess  minority  carrier  concentrations  in  the  
quasi-­‐neutral  emitter  and  base  regions  of  a  bipolar  transistor.    The  shaded  areas  are  
the  depletion  regions  and  the  black  rectangle  is  the  emitter  contact.    You  may  ignore  
recombination  and  assume  a  transistor  area  of   10 µm × 10 µm = 100 × 10−8 cm 2 .  The  
diffusion  coefficient  for  electrons  is   Dn = 10 cm 2 s  and  for  holes,   D p = 2 cm 2 s .  The  
temperature  is  300  K  ( k BT q = 0.026 V).  

 
 
Answer  the  following  questions.  
 
2a)   What  region  of  operation  is  this  transistor  biased  in?    Explain  your  answer.  
 
Solution:  
 
(Forward)  Active  region.  
 
We  see  that  there  are  excess  carriers  injected  in  the  quasi-­‐neutral  base  and  emitter  
sides  of  the  EB  PN  junction,  so  it  is  forward  biased.    There  are  no  excess  carriers  
injected  into  the  base  from  the  collector,  so  it  is  reverse  biased  (or  zero  biased).    
These  are  the  conditions  for  the  forward  active  region  of  operation.  
 
 
 
 
 
 
 
 
 
 
ECE-­‐305     3   Spring  2015  
 Exam  6  ECE  305   Spring    2015  
 
2b)   What  is  the  collector  current  in  Amperes  for  this  transistor?  
 
Solution:  
The  electron  current  density  (in  the  +x  direction)  in  the  base  is    
D 10
J En = −q n ΔnB ( 0 ) = 1.6 × 10−19 × −4
× 2.1× 1012 A/cm 2 = −0.34 A/cm 2  
WB 0.1× 10
The  electron  profile  in  the  base  is  linear,  so  the  base  transport  factor  is  close  to  one.    
(Since  we  are  told  that  there  is  no  recombination  in  the  transistors,  the  base  
transport  factor  is  exactly  one.)    Assuming  that  all  of  this  current  comes  out  the  
collector,  we  multiply  by  the  emitter  area  and  find:  
 
I C = − AE × J En = 100 × 10−8 × 0.34 A/cm 2 = 0.34 × 10−6 A  
 
I C = 0.35 µA
 
   
The  positive  sign  indicates  that  current  flows  into  the  collector  terminal.
 
 
2c)   What  is  the  base  current  in  Amperes  for  this  transistor?  
 
Solution:  
The  hole  current  density  (in  the  +x  direction)  injected  into  the  emitter  is  
D 2
WE
( )
J Ep = −q p ΔpE 0′ = 1.6 × 10−19 ×
0.2 × 10 −4
× 1.05 × 1011 A/cm 2 = −1.68 × 10−3 A/cm 2  

We  multiply  by  the  emitter  area  and  find:  

 
I B = − AE × J Ep = 100 × 10−8 × 1.68 × 10−3 A/cm 2 = 1.7 × 10−9 A  
I B = 1.7 nA  
   
The  positive  sign  indicates  that  current  flows  into  the  base  terminal.
 
2d)   What  is  the  emitter  injection  efficiency  of  this  BJT?  
 
Solution:  
 
J En IC 350 nA
γ = = = = 0.995    
J En + J Ep I C + I B 350 nA+1.7 nA

γ = 0.995  
 
Exam  6  ECE  305   Spring    2015  
ECE-­‐305     4   Spring  2015  
  
N DE
2e)   What  is  the  ratio  of  the  emitter  doping  density  to  the  base  doping  density?    i.e.:   = ?    
N AB
 
 
Solution:  
 
According  to  the  Law  of  the  Junction:  
 
n2
ΔnB ( 0 ) = i eqVBE kBT    
N AB
ni2 qVBE
ΔpE ( 0′ ) =
k BT
e  
N DE
ΔnB ( 0 ) N DE
=  
ΔpE ( 0′ ) N AB
 
Reading  from  the  plot:  
 
ΔnB ( 0 ) N DE 2.1× 1012
= = = 20  
ΔpE ( 0′ ) N AB 1.05 × 1011
 
N DE
= 20  
N AB
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
ECE-­‐305     5   Spring  2015  
 Exam  6  ECE  305   Spring    2015  
 
3) This  problem  is  about  the  transistor  show  below.  
 

 
3a)   What  is  the  region  of  operation  for  this  transistor  if   V A > 0  ?    Explain  your  answer.  
 
Solution:  
VC = VE = 0 ,  so  when  a  positive  voltage  is  put  on  the  base,   VBE = VBC = V A > 0 .    Both  
junctions  are  forward  biased,  so  the  region  of  operation  is  saturation.  
 
3b)   Use  the  Ebers-­‐Moll  equations  to  derive  an  expression  for   I D (V A ) .  
 
Solution:  
From  the  formula  sheet:  
 
(
I C (VBE,VBC ) = α F I F 0 eqVBE kBT − 1 − I R0 eqVBC ) ( kBT
− 1)  
I E (VBE ,VBC ) = I F 0 ( eqVBE kBT
− 1) − α R I R0 (e qVBC kBT
− 1)  
 
From  the  figure,  we  see:     I D = I B ,  so  
 
( )
I D = I B = I E − I C = (1− α F ) I F 0 eqVBE kBT − 1 + (1− α R ) I R0 eqVBC ( kBT
− 1)  
VBE = VBC = V A ,  so  
 
(
I D (VA ) = (1− α F ) I F 0 eqVA kBT
− 1) + (1− α R ) I R0 ( eqVA kBT
− 1)  
I D (VA ) = ((1− α F ) I F 0 + (1− α R ) I R0 ) ( eqVA kBT
− 1)  
 
This  could  be  the  answer,  but  we  can  also  remember  “reciprocity”:     α F I F 0 = α R I R0  
and  write  the  above  equation  as:  
 
I D (VA ) = 2 (1− α F ) I F 0 ( eqVA kBT
− 1)  
 
The  device  behaves  like  a  diode.  
ECE-­‐305     6   Spring  2015  
  
Exam  6  ECE  305   Spring    2015  
 
The  next  three  parts  of  question  3  are  about  the  same  transistor  biased  as  shown  in  the  
figure  above,  but  this  time  you  are  asked  to  plot  some  internal  quantities.    Assume  that  the  
emitter  and  base  regions  are  “short”  and  that  the  collector  is  “long”  and  that  
N DE = 4 × 1018 cm -3 ,   N AB = 2 × 1018 cm -3 ,  and   N DC = 4 × 1017 cm -3 .    Assume  Si  at  room  
temperature  (300  K  and k BT q = 0.026 V)  and  that   V A = 0.7 V .    Your  answers  to  questions  
3c),  3d),  and  3e)  should  be  plotted  on  the  figure  below.  
 

 
 
3c)   The  concentration  of  excess  minority  carrier  electrons  at  the  beginning  of  the  base,  
ΔnB ( 0 ) ,  is  indicated  by  the  filled  circle  on  the  figure  above.    Determine  numerical  
values  of  the  excess  minority  electron  density  at  the  two  ends  of  the  base,   ΔnB ( 0 )
 
and   ΔnB (WB )  and  sketch   ΔnB ( x )  within  the  base.  
 
Numerical  values  of:  
ΔnB ( 0 ) = ? cm -3  
ΔnB (WB ) ? cm -3  
()
Also,  plot   ΔnB x  on  the  figure  above.  (Make  it  clear  whether  your  plot  is  linear  
or  curved.)  
 
 
 
 
 
 

ECE-­‐305     7   Spring  2015  

  
 
 
Exam  6  ECE  305   Spring    2015  
 
Solution:  
Use  the  law  of  the  junction:  
 

ΔnB ( 0 ) =
N AB
(
ni2 qVBE kBT
e )
− 1 cm = -3 1020
2 × 10 18
eqVA ( k BT
)
− 1 = 50 eqVA( k BT
) (
− 1 = 50 e0.7 0.026 − 1 )  
= 2.5 × 1013 cm -3
The  base-­‐collector  junction  has  exactly  the  same  forward  bias,  so    
ΔnB (WB ) = ΔnB ( 0 ) cm -3  
 
ΔnB ( 0 ) = ΔnB (WB ) = 2.5 × 1013 cm -3  
 
The  base  is  short,  so  in  between,  we  have  a  straight  line  for ΔnB ( x ) .    See  the  plot  
 
below  for  the  result.
   
3d)   Find  the  concentration  of  excess  minority  carrier  holes,   ΔpE ( 0′ )  at  the  beginning  of  
the  emitter.    You  may  assume  that   ΔpE (WE ) = 0  at  the  emitter  contact,   x ′ = WE .  
Determine  the  numerical  value  of     ΔpE ( 0′ )  and  plot   ΔpE ( x ′ )  in  the  emitter.    Be  sure  
that  the  scale  is  consistent  with  the  minority  electron  profile  in  the  base.  
 
Numerical  value  of:  
ΔpE ( 0′ ) = ? cm -3  
Also,  plot   ΔpE ( x ′ )  on  the  figure  above.  (Make  it  clear  whether  your  plot  is  linear  
or  curved.)  
 
 
Solution:  
Use  the  law  of  the  junction:  

ΔpE 0′ = ( ) N DE
(
ni2 qVBE kBT
e )
− 1 cm -3 =
1020
4 × 10 18
qV
e A ( k BT
)
− 1 = 25 e ( qV A k BT
) (
− 1 = 25 e0.7 0.026 − 1 )  
= 1.25 × 1012 cm -3
( )
ΔpE 0′ = 1.25 × 1012 cm -3  

This  is  two  times  smaller  than   ΔnB ( 0 )  because  the  emitter  is  doped  two  times  
heavier.  
 

ECE-­‐305     8   Spring  2015  

 The  emitter  is  short  compared  to  a  diffusion  length,  so  we  connect   ΔpE ( 0′ )  and  
ΔpE (WE )  with  a  straight  line.    See  plot  below  for  the  result.  
 
Exam  6  ECE  305   Spring    2015  
 
3e)   Find  the  concentration  of  excess  minority  carrier  holes,   ΔpC ( 0′′ )  at  the  beginning  of  
the  collector.      Determine  the  numerical  value  of     ΔpC ( 0′′ )  and  plot   ΔpC ( x ′′ )  in  the  
collector.    Be  sure  that  the  scale  is  consistent  with  the  minority  electron  profile  in  the  
base.  
 
Numerical  value  of  
( )
ΔpC 0′′ = ? cm -3  
Also,  plot   ΔpC ( x ′′ )  on  the  figure  above.    (Make  it  clear  whether  your  plot  is  linear  
or  curved.)  
 
 
 
Solution:  
Use  the  law  of  the  junction:  
 
n2
(
ΔpE ( 0′′ ) = i eqVBE kBT − 1 cm -3 =
N DC
) 1020
4 × 10 17
eqVA ( k BT
)
− 1 = 250 eqVA ( k BT
) (
− 1 = 250 e0.7 0.026 − 1)
= 1.25 × 1014 cm -3
 
ΔpE ( 0′′ ) = 1.25 × 1014 cm -3
   
This  is  five  times  larger  than   ΔnB (WB )  because  the  collector  is  doped  five  times  
lighter.  
 
The  collector  is  long  compared  to  a  diffusion  length,  so   ΔpC ( x ′′ ) begins  at   ΔpC ( 0′′ )  

( )
and  then  decays  as   ΔpC x ′′ = ΔpC 0′′ e ( ) − x ′′ Lp
.    See  plot  below  for  the  result.  
 
 

ECE-­‐305     9   Spring  2015  

  
 
 
 

ECE-­‐305     10   Spring  2015