PMMD Mel Zg631

BIRLA INSTITUTE OF TECHNOLOGY & SCIENCE, PILANI
WORK INTEGRATED LEARNING PROGRAMMES

Digital Learning
Part A: Content Design
Course Title Physics and Modeling of Microelectronic Devices (PMMD)

Course No(s) MEL ZG631
Credit Units 5
Credit Model Theory + Laboratory Component
Course Author VINAY BELDE
Course Objectives
This course aims at making the basic physical concepts behind microelectronic devices clear
and imparts modeling information about these devices for their use as circuit elements in
integrated circuits Course covers the basic technology, models, properties, and concepts
associated with Semiconductors and Semiconductor
No Course Objective
CO1 To understand basic physical concepts of microelectronic devices from the perspective of
modeling information about these devices for their use as circuit elements in integrated
circuits.
CO2 To understand the mathematical modeling of the microelectronic devices.
CO3 To understan the fundamental aspects of device theory.
Text Book(s)
T1 Muller R. S and Kamins T. I., “Device Electronics for Integrated circuits”, John Wiley, 3 rd
ed., 2003
Reference Book(s) & other resources
R1 Donald A. Neamen, “Semiconductor Physics and Devices”, Fourth Ed. 2012

R2 (ii) Sze S. M., “Physics of Semiconductor Devices”, 2nd Ed., Wiley Eastern, 1981.
R3 (iii) Tyagi M. S., “ Introduction to Semiconductor Materials and Devices”, John
Wiley & Sons, 1991
Modular Content Structure
Semiconductor Physics
1.1. Fundamental of semiconductors; Crystal Structure

1.2. Density of States, Fermi distribution, Concepts of Holes, and electrons
1.3. Semiconductor under Equilibrium, Intrinsic and extrinsic
1.4. Carrier Transport Phenomenon, Drift, Diffusion, Mobility.
1.5. Non-equilibrium Excess Carriers in Semiconductor
1.6. PN Junction
1.6.1. Current in PN Junction Diode
1.7. Metal Semiconductor contact
1.8. Semiconductor Hetro Junction
1.9. The Bipolar Junction Transistor
1.10. Junction Field Effect Transistor
1.11. MOS Electronics
1.11.1. MOS CV
1.11.2. Ideal and non-ideal MOS Capacitor
1.12. MOSFET
1.12.1. MOSFET basic operation
1.12.2. MOSFET Id-Vg, Id-Vd
1.12.3. MOSFET scaling and issues
1.13. Special Semiconductor devices
Learning Outcomes:
No Learning Outcomes
LO1 Apply the fundamentals of Semiconductor Device Physics
LO2 Applications of Equilibrium in Electronic System
LO3 Understand MOS structure, energy band diagrams in equilibrium/ under bias conditions
and basic MOSFET behavior.
LO4 Understand and apply Transistor action, Various bias conditions and use in IC.
Part B: Course Handout
Academic Term First Semester 2020-2021
Course Title Physics and Modelling of Microelectronic Devices
Course No MEL ZG631
Lead Instructor VINAY BELDE
Contact List of Topic Title Topic # References

Hour (from content structure in Part A) (from content (Chap/Sec)
structure in Part A) (Text /
Reference Book)
1 Semiconductor Material, Crystal Fundamental of

Structure, Imperfections in solids, Band semiconductors;
and bond model Crystal Structure
2 Density of States, Fermi Dirac Density of States,

distribution, Distribution of electrons Fermi distribution,
and holes.
Concepts of Holes, and
electrons
3 Meaning of equilibrium, n0 and p0 Semiconductor under
equations, intrinsic fermi level, Equilibrium, Intrinsic
Statistics of donors and acceptors and extrinsic
4 Charge neutrality, position of fermi Semiconductor under

level, Equilibrium, Intrinsic
and extrinsic
5 Carrier Drift, mobility concept. Carrier Transport

Phenomenon, Drift,
Diffusion, Mobility
6 Carrier Diffusion, Graded impurity Carrier Transport

distribution Phenomenon, Drift,
Diffusion, Mobility
7 Generation & recombination, Quasi Non-equilibrium

Fermi Level Excess Carriers in
Semiconductor,
8 Effects of Impurity Distribution and PN Junction

Types of p-n junction and their
properties. Effect of Bias and Junction
Breakdown. Continuity Equation,
Localized States. Ideal- Diode Analysis
and Validity of Approximations.
9 Meaning of Equilibrium in Electronic Metal Semiconductor

System ,Ideal M-S Contact Without & contact
With Bias and Variation of Charge,
Potential, Field, etc., Schottky Contacts
10 Heterojunction materials, Electron Gas, Semiconductor Hetro

Energy Band diagram. Junction
11 Transistor action, Various bias The Bipolar Junction

conditions and use in IC. npn transistor Transistor and Junction
under active bias, its function,
parameters. JFET, its working and Field Effect Transistor
analysis
12 MOS structure, energy band diagrams MOS Electronics-

in equilibrium/ under bias conditions.
Capacitance of MOS system and its
variation
13 Equilibrium and non-equilibrium MOS Electronics

analysis in MOS electronics.
Effect of oxide and interface charges
on MOS system
14 Basic MOSFET Behaviour. MOSFET
Various parameters of MOSFET.
15 Short channel effects in MOSFET. MOSFET
16 Special Semiconductor
LED, solar cell, photo detectors,
Devices
Detailed Plan for Lab work/Design work
Lab Lab Objective Lab Sheet Access Content

No URL Reference
1 Hand written report and use of Matlab to do the Class room session Class notes
calculation part and/or Quizzes only
Evaluation Scheme
No Name Type Duration Weight Day, Date, Session, Time

EC-1 Quiz-I Online - 5% September 10-20, 2020
Quiz-II Online 5% October 20-30, 2020
Quiz-III Online 5% November 10-20, 2020
EC-2 Mid-Semester Test Closed 2 hours 35% Saturday, 10/10/2020 (FN)
Book 10 AM - 12 Noon
EC-3 Comprehensive Open 3 hours 50% Saturday, 28/11/2020 (FN)
Exam Book 9 AM – 12 Noon
Syllabus for Mid-Semester Test (Closed Book): Topics in Contact Hours : 1 to 8

Syllabus for Comprehensive Exam (Open Book): All topics (Contact Hour 1 to 16)
Important links and information:
Elearn portal: https://elearn.bits-pilani.ac.in
Students are expected to visit the Elearn portal on a regular basis and stay up to date with the
latest announcements and deadlines.
Contact sessions: Students should attend the online lectures as per the schedule provided on
the Elearn portal.
Evaluation Guidelines:
1. EC-1 consists of either two Assignments or three Quizzes. Students will attempt them
through the course pages on the Elearn portal. Announcements will be made on the
portal, in a timely manner.
2. For Closed Book tests: No books or reference material of any kind will be permitted.
3. For Open Book exams: Use of books and any printed / written reference material (filed
or bound) is permitted. However, loose sheets of paper will not be allowed. Use of
calculators is permitted in all exams. Laptops/Mobiles of any kind are not allowed.
Exchange of any material is not allowed.
4. If a student is unable to appear for the Regular Test/Exam due to genuine exigencies,
the student should follow the procedure to apply for the Make-Up Test/Exam which
will be made available on the Elearn portal. The Make-Up Test/Exam will be
conducted only at selected exam centres on the dates to be announced later.
It shall be the responsibility of the individual student to be regular in maintaining the self
study schedule as given in the course handout, attend the online lectures, and take all the
prescribed evaluation components such as Assignment/Quiz, Mid-Semester Test and
Comprehensive Exam according to the evaluation scheme provided in the handout.

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BIRLA INSTITUTE OF TECHNOLOGY & SCIENCE, PILANI

WORK INTEGRATED LEARNING PROGRAMMES

Part A: Content Design

Course Title Physics and Modeling of Microelectronic Devices (PMMD)

CO2 To understand the mathematical modeling of the microelectronic devices.

CO3 To understan the fundamental aspects of device theory.

Reference Book(s) & other resources

R1 Donald A. Neamen, “Semiconductor Physics and Devices”, Fourth Ed. 2012

Modular Content Structure

1.1. Fundamental of semiconductors; Crystal Structure

LO1 Apply the fundamentals of Semiconductor Device Physics

LO2 Applications of Equilibrium in Electronic System

Part B: Course Handout

Academic Term First Semester 2020-2021

Course Title Physics and Modelling of Microelectronic Devices

Course No MEL ZG631

Lead Instructor VINAY BELDE

Contact List of Topic Title Topic # References

1 Semiconductor Material, Crystal Fundamental of

2 Density of States, Fermi Dirac Density of States,

4 Charge neutrality, position of fermi Semiconductor under

5 Carrier Drift, mobility concept. Carrier Transport

6 Carrier Diffusion, Graded impurity Carrier Transport

7 Generation & recombination, Quasi Non-equilibrium

8 Effects of Impurity Distribution and PN Junction

9 Meaning of Equilibrium in Electronic Metal Semiconductor

10 Heterojunction materials, Electron Gas, Semiconductor Hetro

11 Transistor action, Various bias The Bipolar Junction

12 MOS structure, energy band diagrams MOS Electronics-

13 Equilibrium and non-equilibrium MOS Electronics

15 Short channel effects in MOSFET. MOSFET

Detailed Plan for Lab work/Design work

Lab Lab Objective Lab Sheet Access Content

No Name Type Duration Weight Day, Date, Session, Time

Syllabus for Mid-Semester Test (Closed Book): Topics in Contact Hours : 1 to 8

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