Opa 2387
Opa 2387
Opa 2387
1 Features 3 Description
• Ultra-low offset voltage: ±2 µV (maximum, tested) The OPA387, OPA2387, and OPA4387 (OPAx387)
• Zero drift: ±0.003 µV/°C family of precision amplifiers offers state-of-the-art
• Low-input bias current: 150 pA (maximum, tested) performance. With zero-drift technology, the OPAx387
• Low noise: 8.5 nV√Hz at 1 kHz offset voltage and offset drift provide unparalleled
• No 1/f noise: 177 nVPP (0.1 Hz to 10 Hz) long-term stability. With a mere 570 µA of quiescent
• Common-mode input range ±100 mV beyond current, the OPAx387 are able to achieve 5.7 MHz
supply rails of bandwidth, a broadband noise of 8.5 nV/√Hz,
• Gain bandwidth: 5.7 MHz and a 1/f noise at 177 nVPP. These specifications
• Quiescent current: 570 μA per amplifier are crucial to achieve extremely-high precision and
• Single supply: 1.7 V to 5.5 V no degradation of linearity in 16-bit to 24-bit analog
• Dual supply: ±0.85 V to ±2.75 V to digital converters (ADCs). The OPAx387 feature
• EMI and RFI filtered inputs flat bias current over temperature; therefore, little to
no calibration is needed in high input impedance
2 Applications applications over temperature.
• Electronic thermometer
All versions are specified over the industrial
• Weigh scale
temperature range of –40°C to +125°C.
• Temperature transmitter
• Ventilators Device Information
• Data acquisition (DAQ) PART NUMBER CHANNEL COUNT PACKAGE(1)
• Semiconductor test OPA387 Single DBV (SOT-23, 5)
• Lab and field instrumentation D (SOIC, 8)
• Merchant network and server PSU
OPA2387 Dual DGK (VSSOP, 8)
• Analog input module
• Pressure transmitter DSG (WSON, 8)
OPA4387 Quad PW (TSSOP, 14)
50
45
40
35
Amplifiers (%)
30
OPA387 ADC 25
Object
20
15
Radiation
Detector 10
5
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA387, OPA2387, OPA4387
SBOS984G – NOVEMBER 2020 – REVISED SEPTEMBER 2023 www.ti.com
Table of Contents
1 Features............................................................................1 7.3 Feature Description...................................................15
2 Applications..................................................................... 1 7.4 Device Functional Modes..........................................15
3 Description.......................................................................1 8 Application and Implementation.................................. 16
4 Revision History.............................................................. 2 8.1 Application Information............................................. 16
5 Pin Configuration and Functions...................................3 8.2 Typical Applications.................................................. 16
6 Specifications.................................................................. 5 8.3 Power Supply Recommendations.............................19
6.1 Absolute Maximum Ratings........................................ 5 8.4 Layout....................................................................... 19
6.2 ESD Ratings............................................................... 5 9 Device and Documentation Support............................20
6.3 Recommended Operating Conditions.........................5 9.1 Device Support......................................................... 20
6.4 Thermal Information: OPA387.................................... 6 9.2 Documentation Support............................................ 20
6.5 Thermal Information: OPA2387.................................. 6 9.3 Receiving Notification of Documentation Updates....20
6.6 Thermal Information: OPA4387.................................. 6 9.4 Support Resources................................................... 20
6.7 Electrical Characteristics.............................................7 9.5 Trademarks............................................................... 20
6.8 Typical Characteristics................................................ 9 9.6 Electrostatic Discharge Caution................................20
7 Detailed Description......................................................14 9.7 Glossary....................................................................21
7.1 Overview................................................................... 14 10 Mechanical, Packaging, and Orderable
7.2 Functional Block Diagram......................................... 14 Information.................................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (February 2022) to Revision G (September 2023) Page
• Changed OPA2387 D (SOIC-8) package status from preview to production data (active) and added
associated thermal information...........................................................................................................................1
• Changed short-circuit current for OPA2387DGK at VS = 1.7 V from ±25 mA to ±15 mA................................... 7
OUT 1 5 V+
V± 2
±
+IN 3 4 ±IN
Not to scale
OUT A 1 8 V+
OUT A 1 8 V+
V± 4 5 +IN B V± 4 5 +IN B
Figure 5-2. OPA2387: D Package, 8-Pin SOIC and Figure 5-3. OPA2387: DSG Package, 8-Pin WSON
DGK Package, 8-Pin VSSOP With Exposed Thermal (Top View)
(Top View)
OUT A 1 14 OUT D
±IN A 2 13 ±IN D
+IN A 3 12 +IN D
V+ 4 11 V±
+IN B 5 10 +IN C
±IN B 6 9 ±IN C
OUT B 7 8 OUT C
Not to scale
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Single-supply 6
VS Supply voltage, VS = (V+) – (V–) V
Dual-supply ±3
Common-mode (V–) – 0.5 (V+) + 0.5
Input voltage, all pins V
Differential (V+) – (V–) + 0.2
Input current, all pins ±10 mA
Output short circuit(2) Continuous Continuous
TA Operating temperature –55 150 °C
TJ Junction temperature –55 150 °C
Tstg Storage temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) Short-circuit to ground, one amplifier per package.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(V–) – 0.2 V < VCM < (V+) + OPA387, OPA2387 140 150
Common-mode rejection 0.1 V, VS = 5.5 V OPA4387 130
CMRR dB
ratio
(V–) – 0.1 V < VCM < (V+), TA = –40°C to +125°C(1) 110 132
(V–) – 0.2 V < VCM < (V+) + 0.1, VS = 5.5 V,
130
TA = –40°C to +125°C(1)
INPUT CAPACITANCE
ZID Differential 100 || 3 MΩ || pF
ZICM Common-mode 60 || 3 GΩ || pF
OPEN-LOOP GAIN
OPA387, OPA2387 135 145
(V–) + 100 mV < VOUT <
OPA4387 120
(V+) – 100 mV
TA = –40°C to +125°C(1) 125
AOL Open-loop voltage gain dB
OPA387, OPA2387 132 145
(V–) + 150 mV < VOUT <
(V+) – 150 mV, OPA4387 120
RL = 2 kΩ
TA = –40°C to +125°C(1) 125
(1) Specification established from device population bench system measurements across multiple lots.
50 60
45 55
50
40
45
35
40
Amplifiers (%)
Amplifiers (%)
30 35
25 30
20 25
20
15
15
10
10
5 5
0 0
-2 -1.5 -1 -0.5 0 0.5 1 1.5 2 -5 -4 -3 -2 -1 0 1 2 3 4 5
Input Offset Voltage (PV) c110
Input Offset Voltage (PV) c100
35
50
30
40
Amplifiers (%)
Amplifiers (%)
25
20 30
15
20
10
10
5
0 0
-5 -4 -3 -2 -1 0 1 2 3 4 5 -0.02 -0.01 0 0.01 0.02
Input Offset Voltage (PV) c101
Offset Voltage Drift (PV/qC) c103
2 2
Input Offset Voltage (PV)
1 1
VCM = 2.95 V VCM = 2.85 V
0 0
-1 -1
-2 -2
-3 -3
-40 -25 -10 5 20 35 50 65 80 95 110 125 -3 -2 -1 0 1 2 3
Temperature (qC) c108
Input Common Mode Voltage (V) c111
Figure 6-5. Offset Voltage vs Temperature Figure 6-6. Offset Voltage vs Common-Mode Voltage
1 160 165
Gain
0.75 140 Phase 150
120 135
Input Offset Voltage (PV)
0.5
100 120
0.25
Gain (dB)
Phase (q)
80 105
0
60 90
-0.25
40 75
-0.5
20 60
Vs = 1.7 V
-0.75 0 45
-1 -20 30
1.5 2 3 4 5 5.5 100m 1 10 100 1k 10k 100k 1M 10M
Supply Voltage (V) c112 Frequency (Hz) c114
Figure 6-7. Offset Voltage vs Supply Voltage Figure 6-8. Open-Loop Gain and Phase vs Frequency
0.5 60
VS = r0.85 V
VS = r2.75 V
40
0.25
Open Loop Gain (PV/V)
20
Gain (dB)
0 0
-20
-0.25 G= 1
-40 G= 1
G= 10
G= 100
-0.5 -60
-75 -50 -25 0 25 50 75 100 125 150 100 1k 10k 100k 1M 10M
Temperature(qC) C129
Frequency (Hz) c113
Figure 6-9. Open-Loop Gain vs Temperature Figure 6-10. Closed-Loop Gain vs Frequency
1000 0.1
IB-
Common-Mode Rejection Ratio (PV/V)
IB+ 0.08
800
IOS 0.06
Input Bias Current (pA)
0.02
400
0
200 -0.02
0 -0.04
-0.06 VS = r0.85 V, (V ) 0.1 V d VCM d (V+)
-200
-0.08
-400 -0.1
-3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150
Input Common Mode Voltage (V) Temperature (qC) C121
Figure 6-11. Input Bias Current vs Common-Mode Voltage Figure 6-12. CMRR vs Temperature
160
CMRR
140 PSRR−
PSRR+
100
80
60
40
20
0
10m 100m 1 10 100 1k 10k 100k 1M 10M
Frequency (Hz) Time (1 s/div) C130
Figure 6-13. PSRR and CMRR vs Frequency Figure 6-14. 0.1-Hz to 10-Hz Noise
20 -40
Input-Referred Voltage Noise (nV/—Hz)
-60
10
Channel Seperation (dB)
-80
7
-100
5
-120
4
3 -140
2 -160
-180
1 -200
100m 1 10 100 1k 10k 100k 100 1k 10k 100k 1M 10M
Frequency (Hz) c115 Frequency (Hz) C122
Figure 6-15. Input Voltage Noise Spectral Density vs Frequency Figure 6-16. Channel-to-Channel Crosstalk
0.1 -60 1 -40
Noise (dB)
G= 1, RL = 10 k: G= 1, RL = 10 k:
G= 1, RL = 2 k: G= 1, RL = 2 k:
G= 1, RL = 600 : G= 1, RL = 600 :
G= 1, RL = 10 k: 0.1 G= 1, RL = 10 k: -60
G= 1, RL = 2 k: G= 1, RL = 2 k:
0.01 G= 1, RL = 600 : -80 G= 1, RL = 600 :
Total Harmonic Distortion
0.01 -80
0.001 -100
0.001 -100
Figure 6-17. THD+N Ratio vs Frequency Figure 6-18. THD+N vs Output Amplitude
0.8 0.8
0.7
0.7
Quiescent Current (mA)
0.4 0.5
0.3
0.4
0.2
0.3
0.1
0 0.2
1 2 3 4 5 6 -40 -25 -10 5 20 35 50 65 80 95 110 125
Supply Voltage (V) c107
Temperature (qC) c102
Figure 6-19. Quiescent Current vs Supply Voltage Figure 6-20. Quiescent Current vs Temperature
1000 80
RISO = 0 :
RISO = 25 :
RISO = 50 :
100 60
Output Impedance :
Overshoot (%)
10 40
1 20
0.1 0
1 10 100 1k 10k 100k 1M 10M 100 1k
Frequency (Hz) Load Capacitance (pF) C124
C138
G = –1, 10 mV step
Figure 6-21. Open-Loop Output Impedance vs Frequency Figure 6-22. Small-Signal Overshoot vs Capacitive Load
80 60
RISO = 0 : Riso = 0
RISO = 25 :
RISO = 50 :
60 45
Phase Margin (°)
Overshoot (%)
40 30
20 15
0 0
100 1k 100 1k
Load Capacitance (pF) C127 Load Capacitance (pF)
G = +1, 10 mV step G = +1
Figure 6-23. Small-Signal Overshoot vs Capacitive Load Figure 6-24. Phase Margin vs Capacitive Load
VIN VIN
VOUT VOUT
Output Voltage (1 V/div)
Voltage (1 V/div)
Time (100 µs/div) C125
Time (500 ns/div) C133
G = –1
Figure 6-25. No Phase Reversal Figure 6-26. Overload Recovery
VIN VIN
VOUT VOUT
Output Voltage (2 mV/div)
Voltage (1 V/div)
G = +1 4-V step
Figure 6-27. Small-Signal Step Response Figure 6-28. Large-Signal Step Response
Rising Edge
Falling Edge
Voltage (100 µV/div)
7 Detailed Description
7.1 Overview
The OPAx387 family of zero-drift amplifiers is engineered with state-of-the-art, proprietary, precision zero-drift
technology. These amplifiers offer ultra-low input offset voltage and drift, and achieve excellent input and output
dynamic linearity. The OPAx387 operate from 1.7 V to 5.5 V, are unity-gain stable, and are designed for a wide
range of general-purpose and precision applications. The OPAx387 strengths also include a 5.7-MHz bandwidth,
8.5-nV/√Hz noise spectral density, and no 1/f noise, making the OPAx387 an excellent choice for interfacing with
sensor modules, and buffering high-fidelity, digital-to-analog converters (DACs).
7.2 Functional Block Diagram
GM_FF
CCOMP
CLK CLK
+IN
OUT
–IN
GM1 GM2 GM3
CCOMP
Ripple Reduction
Technology
450
+IN –
CORE
450
–IN +
V–
90
80
70
60
50
40
30
20
10M 100M 1G 5G
Frequency (Hz) c104
VREF
VCC
R5
+
U1B
ILOAD R2 R6
+ R1
VBUS +
– +
VSHUNT RSHUNT VOUT
U1A
– R3 RL
VCC
R4
where
• VSHUNT = ILOAD ´ RSHUNT
R
GainDiff_Amp = 4
• R3
R6
VREF = VCC ´
R5 + R6
•
There are two types of errors in this design: gain and offset. Gain errors are introduced by the tolerance of the
shunt resistor and the ratios of R4 to R3 and, similarly, R2 to R1. Offset errors are introduced by the voltage
divider (R5 and R6) and how closely the ratio of R4 / R3 matches R2 / R1. The latter value affects the CMRR of
the difference amplifier, ultimately translating to an offset error.
The value of VSHUNT is the ground potential for the system load because VSHUNT is a low-side measurement.
Therefore, a maximum value must be placed on VSHUNT. In this design, the maximum value for VSHUNT is set
to 100 mV. Equation 2 calculates the maximum value of the shunt resistor given a maximum shunt voltage of
100 mV and maximum load current of 1 A.
VSHUNT(Max) 100 mV
RSHUNT(Max) = = = 100 mW
ILOAD(Max) 1A (2)
The tolerance of RSHUNT is directly proportional to cost. For this design, a shunt resistor with a tolerance of 0.5%
is selected. If greater accuracy is required, select a 0.1% resistor or better.
The load current is bidirectional; therefore, the shunt voltage range is –100 mV to +100 mV. This voltage is
divided down by R1 and R2 before reaching the operational amplifier, U1A. Make sure that the voltage present at
the noninverting node of U1A is within the common-mode range of the device. Use an operational amplifier, such
as the OPAx387, that has a common-mode range that extends below the negative supply voltage. The offset
error is minimal because the OPAx387 has a typical offset voltage of merely ±0.25 µV (±5 µV, maximum).
Given a symmetric load current of –1 A to +1 A, the voltage divider resistors, R5 and R6, must be equal. To
be consistent with the shunt resistor, a tolerance of 0.5% is selected. To minimize power consumption, 10‑kΩ
resistors are used.
To set the gain of the difference amplifier, the common-mode range and output swing of the OPAx387 must
be considered. Equation 3 and Equation 4 depict the typical common-mode range and maximum output swing,
respectively, of the OPAx387 given a 3.3‑V supply.
The gain of the difference amplifier can now be calculated as shown in Equation 5.
The resistor value selected for R1 and R3 is 1 kΩ. 15.4 kΩ is selected for R2 and R4 because this number is the
nearest standard value. Therefore, the ideal gain of the difference amplifier is 15.4 V/V.
The gain error of the circuit primarily depends on R1 through R4. As a result of this dependence, 0.1% resistors
were selected. This configuration reduces the likelihood that the design requires a two-point calibration. A simple
one-point calibration, if desired, removes the offset errors introduced by the 0.5% resistors.
8.2.1.3 Application Curve
3.30
Output Voltage (V)
1.65
0
-1.0 -0.5 0 0.5 1.0
Input Current (A)
Figure 8-2. Bidirectional Current-Sensing Circuit Performance: Output Voltage vs Input Current
R4
5V 100 k
RG REF5025
R4 R2
100 k 25 k
5V
5V 5V
+SENSE
± ±
VOUT OPAx387 OPAx387
+ +
R2
10 k GND GND
±SENSE
Load Cell 200 NŸ
GND G=5+
GND RG
CAUTION
Supply voltages greater than 6 V can permanently damage the device (see Section 6.1).
8.4 Layout
8.4.1 Layout Guidelines
Pay attention to good layout practice. Keep traces short and, when possible, use a printed-circuit board (PCB)
ground plane with surface-mount components placed as close to the device pins as possible. Place a 0.1-µF
capacitor close to the supply pins. These guidelines must be applied throughout the analog circuit to improve
performance, and provide benefits such as reducing the electromagnetic interference (EMI) susceptibility.
For lowest offset voltage and precision performance, optimize circuit layout and mechanical conditions. Avoid
temperature gradients that create thermoelectric (Seebeck) effects in the thermocouple junctions formed from
connecting dissimilar conductors. Cancel these thermally-generated potentials by making sure that the potentials
are equal on both input pins. Other layout and design considerations include:
• Use low thermoelectric-coefficient conditions (avoid dissimilar metals).
• Thermally isolate components from power supplies or other heat sources.
• Shield operational amplifier and input circuitry from air currents, such as cooling fans.
Follow these guidelines to reduce the likelihood of junctions being at different temperatures, which can cause
thermoelectric voltage drift of 0.1 µV/°C or higher depending on materials used.
8.4.2 Layout Example
RIN
VIN +
RG VOUT
GND RF
VS Minimize
parasitic
CBYPASS inductance by
VOUT
placing bypass
capacitor close
OUT V+ to V+.
V–
+IN –IN
Keep high
RG
impedance VIN
input signal RF
away from
Route trace under package for output to
noisy traces.
feedback resistor connection.
Note
These files require that either the TINA software or TINA-TI software be installed. Download the free
TINA-TI simulation software from the TINA-TI™ software folder.
9.7 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 27-Sep-2023
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
OPA2387DGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 2B2T Samples
OPA2387DGKT ACTIVE VSSOP DGK 8 250 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 2B2T Samples
OPA2387DR ACTIVE SOIC D 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 OP2387 Samples
OPA2387DSGR ACTIVE WSON DSG 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2N3H Samples
OPA2387DSGT ACTIVE WSON DSG 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 2N3H Samples
OPA387DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 2IMT Samples
OPA387DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 2IMT Samples
OPA4387PWR ACTIVE TSSOP PW 14 3000 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 OPA4387 Samples
OPA4387PWT ACTIVE TSSOP PW 14 250 RoHS & Green SN Level-2-260C-1 YEAR -40 to 125 OPA4387 Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 27-Sep-2023
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Sep-2023
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Sep-2023
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE OUTLINE
DBV0005A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
3.0 C
2.6
1.75 0.1 C
B A
1.45
PIN 1
INDEX AREA
1 5
2X 0.95 (0.1)
3.05
2.75
1.9 1.9
2
(0.15)
4
3
0.5
5X
0.3
0.15
0.2 C A B NOTE 5 (1.1) TYP
0.00
1.45
0.90
0 -10
0.25
GAGE PLANE 0.22
TYP
0.08 0 -10
8
TYP 0.6
0 TYP SEATING PLANE
0.3
0 -10
0 -10
4214839/H 09/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
5. Support pin may differ or may not be present.
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EXAMPLE BOARD LAYOUT
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
(1.9)
2
2X (0.95)
3 4
SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK
4214839/H 09/2023
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
DBV0005A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR
PKG
5X (1.1)
1
5
5X (0.6)
SYMM
2 (1.9)
2X(0.95)
3 4
(R0.05) TYP
(2.6)
4214839/H 09/2023
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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GENERIC PACKAGE VIEW
DSG 8 WSON - 0.8 mm max height
2 x 2, 0.5 mm pitch PLASTIC SMALL OUTLINE - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224783/A
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PACKAGE OUTLINE
DSG0008A SCALE 5.500
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2.1 B
A
1.9
0.32
PIN 1 INDEX AREA 0.18
2.1
1.9
0.4
0.2
0.8 C
0.7
SEATING PLANE
0.05 SIDE WALL
0.08 C
0.00 METAL THICKNESS
DIM A
OPTION 1 OPTION 2
0.1 0.2
EXPOSED
THERMAL PAD 0.9 0.1 (DIM A) TYP
4 5
6X 0.5
2X
9
1.5 1.6 0.1
8
1
PIN 1 ID 0.32
8X
(45 X 0.25) 0.4 0.18
8X
0.2 0.1 C A B
0.05 C
4218900/E 08/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
DSG0008A WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
8X (0.25)
(0.55)
SYMM 9
(1.6)
6X (0.5)
5
4
(1.9)
4218900/E 08/2022
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
DSG0008A WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
8X (0.25)
(0.45)
SYMM
9
6X (0.5) (0.7)
5
4
(1.9)
EXPOSED PAD 9:
87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:25X
4218900/E 08/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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