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    ss9014 Sam

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    Roni Pasla
    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low-level, low-noise pre-amplifier applications. The transistor has a high power dissipation of 450mW and high current gain (hFE) with good linearity. Key electrical characteristics include a DC current gain (hFE) of 60-1000 depending on classification, collector-base saturation voltage of 0.14-0.3V, and a current gain-bandwidth product of 150-270MHz. The transistor is packaged in a standard TO-92 case.

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    ss9014 Sam

    Uploaded by

    Roni Pasla
    8 views2 pages
    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low-level, low-noise pre-amplifier applications. The transistor has a high power dissipation of 450mW and high current gain (hFE) with good linearity. Key electrical characteristics include a DC current gain (hFE) of 60-1000 depending on classification, collector-base saturation voltage of 0.14-0.3V, and a current gain-bandwidth product of 150-270MHz. The transistor is packaged in a standard TO-92 case.

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    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low-level, low-noise pre-amplifier applications. The transistor has a high power dissipation of 450mW and high current gain (hFE) with good linearity. Key electrical characteristics include a DC current gain (hFE) of 60-1000 depending on classification, collector-base saturation voltage of 0.14-0.3V, and a current gain-bandwidth product of 150-270MHz. The transistor is packaged in a standard TO-92 case.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    8 views2 pages

    ss9014 Sam

    Uploaded by

    Roni Pasla
    This document provides specifications for an NPN epitaxial silicon transistor intended for use in low-level, low-noise pre-amplifier applications. The transistor has a high power dissipation of 450mW and high current gain (hFE) with good linearity. Key electrical characteristics include a DC current gain (hFE) of 60-1000 depending on classification, collector-base saturation voltage of 0.14-0.3V, and a current gain-bandwidth product of 150-270MHz. The transistor is packaged in a standard TO-92 case.

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    SS9014 NPN EPITAXIAL SILICON TRANSISTOR

    PRE-AMPLIFIER, LOW LEVEL & LOW NOISE


    • High total power dissipation. (PT=450mW) TO-92
    • High hFE and good linearity
    • Complementary to SS9015

    ABSOLUTE MAXIMUM RATINGS (TA=25 Î)


    Characteristic Symbol Rating Unit

    Collector-Base Voltage VCBO 50 V


    Collector-Emitter Voltage VCEO 45 V
    Emitter-Base Voltage VEBO 5 V
    Collector Current IC 100 mA

    Î
    Collector Dissipation PC 450 mW

    Î
    Junction Temperature TJ 150
    Storage Temperature T STG -55 ~ 150

    1. Emitter 2. Base 3. Collector

    ELECTRICAL CHARACTERISTICS (TA=25 Î)


    Characteristic Symbol Test Conditions Min Typ Max Unit

    Collector-Base Breakdown Voltage BVCBO À


    IC =100 , IE =0 50 V

    À
    Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 45 V
    Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 5 V
    Collector Cut-off Current ICBO VCB =50V, IE =0 50 nA
    Emitter Cut-off Current IEBO VEB =5V, IC =0 50 nA
    DC Current Gain hFE VCE =5V, IC =1mA 60 280 1000
    Collector-Base Saturation Voltage VCE (sat) IC =100mA, IB =5mA 0.14 0.3
    Base-Emitter Saturation Voltage VBE (sat) IC =100mA, IB =5mA 0.84 1.0 V
    Base-Emitter On Voltage VBE (on) VCE =5V, IC =2mA 0.58 0.63 0.7 V
    Output Capacitance COB VCB =10V, IE =0 2.2 3.5 pF
    f=1MHz
    Current Gain-Bandwidth Product fT VCE =5V, IC =10mA 150 270 MHz

    Ï
    Noise Figure NF VCE =5V, IC =0.2mA 0.9 10 dB
    f=1KHz, RS=2

    hFE CLASSIFICATION

    Classification A B C D

    hFE 60-150 100-300 200-600 400-1000


    SS9014 NPN EPITAXIAL SILICON TRANSISTOR

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