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    JFET Notes

    Uploaded by

    Arman Ghosh
    Junction field effect transistors can be used as a capacitor or resistor. They are voltage controlled devices with almost zero standby power because the current passing through is controlled by the gate voltage. The input impedance is extremely high and the gate junction is reverse biased, forming a depletion region that acts as a barrier preventing flow of majority and minority charge carriers. As a voltage is applied at the gate, the depletion region's width changes, causing the drain current value to vary.

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    JFET Notes

    Uploaded by

    Arman Ghosh
    76 views12 pages
    Junction field effect transistors can be used as a capacitor or resistor. They are voltage controlled devices with almost zero standby power because the current passing through is controlled by the gate voltage. The input impedance is extremely high and the gate junction is reverse biased, forming a depletion region that acts as a barrier preventing flow of majority and minority charge carriers. As a voltage is applied at the gate, the depletion region's width changes, causing the drain current value to vary.

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    Junction field effect transistors can be used as a capacitor or resistor. They are voltage controlled devices with almost zero standby power because the current passing through is controlled by the gate voltage. The input impedance is extremely high and the gate junction is reverse biased, forming a depletion region that acts as a barrier preventing flow of majority and minority charge carriers. As a voltage is applied at the gate, the depletion region's width changes, causing the drain current value to vary.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    76 views12 pages

    JFET Notes

    Uploaded by

    Arman Ghosh
    Junction field effect transistors can be used as a capacitor or resistor. They are voltage controlled devices with almost zero standby power because the current passing through is controlled by the gate voltage. The input impedance is extremely high and the gate junction is reverse biased, forming a depletion region that acts as a barrier preventing flow of majority and minority charge carriers. As a voltage is applied at the gate, the depletion region's width changes, causing the drain current value to vary.

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