2SK3476

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3476
VHF- and UHF-band Amplifier Applications
Unit: mm

· Output power: PO = 7.0 W (min)

· Gain: GP = 11.4dB (min)
· Drain efficiency: ηD = 60% (min)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 20 V

Gain-source voltage VGSS ±5 V
Drain current ID 3 A
Power dissipation PD (Note 1) 20 W
Channel temperature Tch 150 °C
Storage temperature range Tstg −45~150 °C

Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

JEDEC ―
Marking JEITA ―
TOSHIBA 2-5N1A
2 Type name

UC F
1 3
**
Dot Lo No.

1. Gate
2. Source (heat sink)
3. Drain

Caution
Please take care to avoid generating static electricity when handling this transistor.

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ¾ ¾ 5 mA

Gate-source leakage current IGSS VGS = 10 V ¾ ¾ 5 mA
Threshold voltage Vth VDS = 7.2 V, ID = 2 mA 0.55 1.05 1.55 V
Drain-source on-voltage VDS (ON) VGS = 10 V, ID = 75 mA ¾ 18 ¾ mV
Forward transconductance Yfs VDS = 7.2 V, IDS = 1 A ¾ 1 ¾ S
Input capacitance Ciss VDS = 7.2 V, VGS = 0 V, f = 1 MHz ¾ 53 ¾ pF
Output capacitance Coss VDS = 7.2 V, VGS = 0 V, f = 1 MHz ¾ 49 ¾ pF
Output power PO 7 ¾ ¾ W
VDS = 7.2 V,
Drain efficiency hD Iidle = 500 mA (VGS = adjust), 60 ¾ ¾ %
f = 520 MHz, Pi = 500 mW,
Power gain GP 11.4 ¾ ¾ dB
VDS = 6.0 V,
Low voltage output power POL Iidle = 500 mA (VGS = adjust), 5 ¾ ¾ W
f = 520 MHz, Pi = 500 mW,
VDS = 10 V, PO = 7 W,
VGS = adjust, Pi = adjust,
Load mismatch ¾ No degradation
f = 520 MHz,
VSWR LOAD 20:1 all phase

Note 1: These characteristic values are measured using measurement tools specified by Toshiba.

Output Power Test Fixture

(Test Condition: f = 520 MHz, VDS = 7.2 V, Iidle = 500 mA, Pi = 500 mW)

C11 C5
R1
C9 C4 C10
Pi PO
ZG = 50 W C1 C2 C3 L1 L2 C6 C7 C8 ZL = 50 W

C12 C13 C14 C15

R2

VGS VDS

C1: 15 pF L1: f0.6 mm enamel wire, 5.8ID, 4T R1: 2.2 W

C2: 11 pF L2: f0.6 mm enamel wire, 5.8ID, 8T R2: 1.5 kW
C3: 9 pF
C4: 30 pF
C5: 30 pF
C6: 11 pF
C7: 8 pF
C8: 9 pF
C9: 2200 pF
C10: 2200 pF
C11: 2200 pF
C12: 10000 pF
C13: 10 mF
C14: 10000 pF
C15: 10 mF

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PO – Pi PO – Pi
12 20
f = 520 MHz f = 520 MHz
VDS = 7.2 V Iidle = 500 mA
10 700 mA 9.6 V
Tc = 25°C Tc = 25°C
15
(W)

(W)
8
500 mA
PO

PO
Iidle = 300 mA
Output power

Output power
6 10
7.2 V

4
VDS = 6.0 V
5
2

0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

Input power Pi (mW) Input power Pi (mW)

hD – Pi hD – Pi
100 100
f = 520 MHz f = 520 MHz
VDS = 7.2 V Iidle = 500 mA
Tc = 25°C Tc = 25°C
80 80
(%)
(%)

700 mA
VDS = 6.0 V
Drain efficiency DD
Drain efficiency DD

60 60
500 mA 7.2 V
Iidle = 300 mA
9.6 V
40 40

20 20

0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

Input power Pi (mW) Input power Pi (mW)

PO – Pi hD – Pi
12 100
f = 520 MHz f = 520 MHz
VDS = 7.2 V
VDS = 7.2 V
10 Iidle = 500 mA
Iidle = 500 mA -20°C 80
(%)
(W)

8 -20°C
Drain efficiency DD
PO

60°C 60
60°C
Output power

6 25°C
Tc = 100°C 25°C
40
Tc = 100°C
4

20
2

0 0
0 200 400 600 800 1000 0 200 400 600 800 1000

Input power Pi (mW) Input power Pi (mW)

Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves.

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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