Switching (30V, 7.0A) : Transistors

SP8K3
Transistors
Switching (30V, 7.0A)

SP8K3
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter. External dimensions (Unit : mm)
SOP8
5.00.2
(5) (8)
6.00.3 3.90.15
Max.1.75
Structure Silicon N-channel MOS FET
1.50.1 0.15
1.27
0.40.1 0.1 Each lead has same dimensions
Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr. 1 and Tr. 2.
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD.
Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
Limits 30 20 7.0 28 1.6 6.4 2 150 55 to +150
Unit V V A A A A W C C
1 1 2
0.50.1
(1) (4)
0.20.1
(1) (2) (3) (4)

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE 2 BODY DIODE
A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
Thermal resistance (Ta=25C)

Parameter Channel to ambient
MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-a)
Limits 62.5
Unit C / W
1/3
SP8K3
Transistors
Electrical characteristics (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
Min. 30 1.0 5.0
Typ. 17 23 25 600 200 120 8 10 37 11 8.4 1.9 3.3
Max. 10 1 2.5 24 33 35 11.8
Unit A V A V m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.0A, VGS=10V ID=7.0A, VGS=4.5V ID=7.0A, VGS=4V ID=7.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.29 RGS=10 VDD 15V VGS=5V ID=7.0A
Body diode characteristics (Source-Drain Characteristics) (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter Forward voltage
Pulsed
Symbol VSD
Min.
Typ.
Max. 1.2
Unit V
Conditions IS=6.4A, VGS=0V
2/3
SP8K3
Transistors
Electrical characteristic curves
10000
1000
tf
1000
Ciss
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
Ta=25C f=1MHz VGS=0V
10000
CAPACITANCE : C (pF)
Ta=25C VDD=15V VGS=10V RG=10 Pulsed
10
Ta=25C 9 VDD=15V ID=7A 8 RG=10 7 Pulsed 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16
100
td (off)
100
Coss Crss
tr
10
td (on)
1 0.01
10 0.01
0.1
10
100
0.1
10
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
Ta=125C Ta=75C Ta=25C Ta= 25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
100
300 Ta=25C Pulsed 250 200 150 100 50 0
100
VGS=0V Pulsed
10
SOURCE CURRENT : Is (A)

8 10 12 14 16
10
ID=7A ID=3.5A
0.1
0.01
0.1
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
VGS=10V Pulsed
VGS=4.5V Pulsed
10000
10000
10000
VGS=4V Pulsed
1000
1000
1000
100
100
100
10
10
10
1 0.1
10
1 0.1
10
1 0.1
10
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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SP8K3

Switching (30V, 7.0A)

Structure Silicon N-channel MOS FET

0.40.1 0.1 Each lead has same dimensions

Continuous Pulsed Continuous Pulsed

Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg

Limits 30 20 7.0 28 1.6 6.4 2 150 55 to +150

(1) (2) (3) (4)

1 ESD PROTECTION DIODE 2 BODY DIODE

Thermal resistance (Ta=25C)

Symbol Rth (ch-a)

Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Min. 30 1.0 5.0

Typ. 17 23 25 600 200 120 8 10 37 11 8.4 1.9 3.3

Max. 10 1 2.5 24 33 35 11.8

Conditions IS=6.4A, VGS=0V

GATE-SOURCE VOLTAGE : VGS (V)

SWITCHING TIME : t (ns)

Ta=25C f=1MHz VGS=0V

Ta=25C VDD=15V VGS=10V RG=10 Pulsed

Ta=25C 9 VDD=15V ID=7A 8 RG=10 7 Pulsed 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16

DRAIN-SOURCE VOLTAGE : VDS (V)

DRAIN CURRENT : ID (A)

TOTAL GATE CHARGE : Qg (nC)

Fig.1 Typical Capacitance vs. Drain-Source Voltage

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)

300 Ta=25C Pulsed 250 200 150 100 50 0

DRAIN CURRENT : ID (A)

SOURCE CURRENT : Is (A)

GATE-SOURCE VOLTAGE : VGS (V)

GATE-SOURCE VOLTAGE : VGS (V)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.4 Typical Transfer Characteristics

Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

Fig.6 Source Current vs. Source-Drain Voltage

STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)

STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)

STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ()

Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ()

Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ()

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