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600 W Half-Bridge LLC Evaluation Board: EVAL - 600W - LLC - 12V - C7 - D Digital & Analog

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600 W Half-Bridge LLC

evaluation board
EVAL_600W_LLC_12V_C7_D
digital & analog
Table of contents

1 General description

2 Efficiency results

3 Design concept

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 2


General

Description:
The “EVAL_600W_LLC_12V_C7“ - evaluation board shows how to design a Half-Bridge LLC
stage of a server SMPS with the target to meet 80+ Titanium standard efficiency requirements. On
this purpose there has been applied latest CoolMOS™ technology IPP60R180C7 600 V power
MOSFET on the primary side and OptiMOS™ low voltage power MOSFET in
SuperSO8 BSC010N04LS in the synchronous rectification secondary stage, in combination with QR
CoolSET™ ICE2QR2280Z, hi-low side driver 2EDL05N06PF, low-side Gate Driver 2EDN7524F and
a LLC Controller ICE2HS01G for the analog or XMC4200 in the digital version.

Summary of features:
› Output voltage: 12 V
› Output current: 50 A
› Efficiency @ 10% load > 95%
› Peak efficiency @ 50% load > 97,8%

The following variants are available:


› 600W 12V LLC analog version with CoolMOS™ C7, IPP60R180C7, EVAL_600W_LLC_12V_C7
› 600W 12V LLC digital version with CoolMOS™ C7, IPP60R180C7, EVAL_600W_LLC_12V_C7_D

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 3


Example of system understanding: Infineon
demo solution for Titanium HV DC/DC stage
Half-Bridge LLC with Primary HV MOSFETs SR MOSFETs
synchronous rectification in CoolMOS TM IPP60R180C7 OptiMOSTM BSC010N04LS
center tap configuration Reduced gate charge (Qg) New generation
› Reduced Eoff › Best FOM RDS(on) x Qg
Vin 350-410 VDC › High body diode ruggedness › Best FOM RDS(on) x Qoss

Vin_nom 380 VDC HB Gate Drive IC Bias QR Flyback SR MOSFETs


2EDL05N06PF controller BSC010N04LS
Vout_nom 12 VDC Non isolated LS Gate Drive ICE2QR2280Z
2EDN7524F
Iout 50 A LLC controller
Digital XMC4200 / Analog ICE2HS01G
Po 600 W

fres=f0 157 kHz

fmin 90 kHz

fmax 210 kHz


Transformer
turns ratio
16:1

Cr 66 nF

Lr 15.5 uH
Resonant inductor Transformer
Lm 195 uH RM12 core PQ35/35 core

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 4


Control board analog & digital

Two possible solution to control Infineon`s 600 W LLC evaluation board

Analog - ICE2HS01G Digital - XMC4200-Q48K256 AB


› Resonant mode controller for Half-Bridge LLC › ARM® Cortex®-M4, 80 MHz, incl. single cycle
resonant converter with synchronous DSP MAC and floating point unit (FPU)
rectification drives › 8-channel DMA + dedicated DMA for USB
› Driving signal for synchronous rectification › USB 2.0 full-speed device
which support full operation of Half-Bridge LLC › CPU Frequency: 80 MHz
resonant converter
› eFlash: 256 kB including hardware ECC
› 20-pin DSO package
› 40 kB SRAM
› 30 kHz to 1MHz switching frequency
› Package: PG-LQFP-48
› 50% duty cycle for both primary and secondary
gate drives
› Adjustable dead time with high accuracy

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 5


PCB boards layout: main power board and
control and bias daughter boards

 Power density >20 W/inch3

Controller board Bias board

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Main power board schematic (digital)

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Bias board schematic

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Analog control board schematic

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Digital control board schematic

Digital controller

Q48K256 AB
XMC4200-
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PCB structure

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BOM (rework from digital to analog)
Part Value Pcs Tolerance Device Package Description Assembling info Supplier

C3 470n/50V 1 C-EU_C0805 C0805 CAPACITOR Replace 10n/50V with 470n/50V

R19 4K3 1 ±1% R-EU_R0805 R0805 RESISTOR Replace 330R with 4K3

R20 4K3 1 ±1% R-EU_R0805 R0805 RESISTOR Replace 330R with 4K3

R36 56R 1 ±1% R-EU_R0805 R0805 RESISTOR Assemble n.a. with 56R

IC1 Board 1 Board PCB Analog_Controlcard IFX

C3 R19 & R20 R36


2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 12
Table of contents

I General description

II Efficiency results

III Design concept

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 13


Automated efficiency measurement

Combination of converter design Proper selection of SR LV device and


(resonant tank, transformer) and secondary side
proper HV device election
0,99
97.8% peak efficiency!
0,985
› Output voltage: 12 VDC
0,98
0,975
› Output current: 50 A
0,97 › Efficiency: > 95% @ 10%
0,965 load, Vin = 380 VDC
0,96 › Efficiency max: 97.8%, Vin
0,955 = 380 VDC
Highest Efficiency standard in
Efficiency

0,95
0,945 Computing applications
0,94 (HV DC/DC stage)
0,935 C7 180mOhm
0,93
0,925
0,92
0,915
0,91
0,905
0,9 0.1% Total accuracy
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49
IOUT [A]

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 14


Table of contents

1 General description

2 Efficiency results

3 Design concept

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 15


Design procedure: input data

Vin _ nom
n
2  Vout _ nom
n Vo _ min
M min  K min(Q, m, Fx ) 
Vin _ max
2
n Vo _ max
M max  K max (Q, m, Fx ) 
Vin _ min
2
2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 16
Resonant tank components and related
resonant frequencies

› n=Vin_nom/(2xVo)=380/(2*12)≈16
› Lm=195µH
› Lr=15.5µH
› Ln=Lm/Lr=12.5
› Cr=66nF

1 1
fo   157kHz fp   42.7kHz
2  Lr  Cr 2  ( Lr  Lm)  Cr

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Gain curves

DC - gain curve (600W LLC hardware revision C7)


1,2
n  Vo _ max
M max 
Vin _ min
1,1 2

1
5A

15
gain

n Vo _ min
0,9 A
M min  25
Vin _ max A

0,8 2

0,7

0,6

frequency [Hz]

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 18


Energy related calculations
(Ref. IPP60R180C7 device parameters)

2 2 n  Vo
Im ag _ min    0.672 A
 2  fsw _ max  Lm

1
Enres _ min   ( Lm  Lr )  I ² mag _ min  95.1 J
2
 Enres _ min  Encap _ max
1
Encap _ max   (2Co (er ))  V ² DS _ max  9 J
2

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 19


Qoss, Imag,pk, tdead,min, tecs relationship

IQ2
Im,pk
t
IQ 2(t )  Im, pk  (1  ) t  tecs
tecs Cds
tecs  f ( Rg , tot,Vgs, th, )
IQ 2(t )  0 t  tecs Cgd

ICHB
Im,pk
tdead , min
1
0 IC (t )dt  2  Im, pk  tecs  Im, pk  (tdead, min  tecs )  2  Qoss , @ 400 V
HB

VHB
VBULK

1 tdead, min 


t 2  Q

ecs oss, @ 400 V

2 Im, pk
tecs tdead,min

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 20


Time related calculations
(Ref. IPP60R180C7 device parameters)

2 2 n  Vo
Im ag _ min    0.672 A
 2  fsw _ max  Lm
2 2 n  Vo
Im ag _ max    1.66 A
 2  fsw _ min  Lm
tecs 2  Qoss, @ 400V
tdead, min    130 n sec
2 Im ag , max
tecs 2  Qoss, @ 400V
tdead, max    311 n sec
2 Im ag, min

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 21


Main transformer structure:
PQ35/35 core with TDK PC95 ferrite material

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Resonant choke:
RM12 core, material N87

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 23


Evaluation board
EVAL_600W_12V_LLC_C7

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 24


Support slides
600W LLC evaluation board

Evaluation board page – EVAL_600W_12V_LLC_C7

– Technical description
– Datasheets
– Parameters
– Related material
– Videos

– 650V CoolMOS™ C7
Product family pages – XMC 32-Bit Industrial Microcontroller
– Resonant Mode Controller
– Product brief – OptiMOS™ 5 40V and 60V
– Application notes
– Selection guides
– Datasheets and portfolio
– Videos
– Simulation models

2015-10-12 Copyright © Infineon Technologies AG 2015. All rights reserved. 25

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