APM1105NU ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

· 100V/16A, D

RDS(ON)= 100mW (max.) @ VGS=10V S

RDS(ON)= 170mW (max.) @ VGS=4.5V
G
· ESD Protected
Top View of TO-252-3
· Reliable and Rugged
· Lead Free and Green Devices Available D

(RoHS Compliant)

Applications G

· Power Management in TV Inverter.

N-Channel MOSFET

Ordering and Marking Information

APM1105N Package Code

U : TO-252-3
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 175 oC
Handling Code
Temperature Range TR : Tape & Reel (2500ea/reel)
Assembly Material
Package Code G : Halogen and Lead Free Device

APM1105N U : APM1105N XXXXX - Lot Code

XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.4 - March, 2014
APM1105NU ®

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA =25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 100
V
V GSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current 5 A
TC=25°C 64
I DP 300μs Pulse Drain Current Tested A
TC=100°C 44
TC=25°C 16
ID Continuous Drain Current A
TC=100°C 11
TC=25°C 60
PD Maximum Power Dissipation W
TC=100°C 30
RqJC Thermal Resistance-Junction to Case 2.5 °C/W
RqJA Thermal Resistance-Junction to Ambient 50 °C/W
E AS Avalanche Energy, Single Pulsed (L=0.3mH) 30 mJ

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM1105NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BV DSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 100 - - V
VDS=80V, V GS=0V - - 1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS , IDS=250mA 1.5 2 2.5 V
IGSS Gate Leakage Current VGS=±16V, V DS=0V - - ±10 mA
VGS=10V, I DS=5A - 80 100
RDS(ON) a Drain-Source On-state Resistance mW
VGS=4.5V, IDS=2A - 130 170
Diode Characteristics
VSDa Diode Forward Voltage ISD =5A, V GS=0V 0.6 0.8 1.1 V
trr Reverse Recovery Time 33 47 61 ns
IDS=5A, dlSD /dt=100A/ms
Q rr Reverse Recovery Charge 61 87 113 nC

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Rev. A.4 - March, 2014
APM1105NU ®

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM1105NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics b
C iss Input Capacitance 730 940 1250
VGS=0V,
Coss Output Capacitance VDS=30V, 45 80 115 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 25 50 75
td(ON) Turn-on Delay Time - 13 24
tr Turn-on Rise Time VDD=30V, R L=30W, - 10 19
IDS=1A, VGEN =10V, ns
t d(OFF) Turn-off Delay Time RG=6W - 32 60
tf Turn-off Fall Time - 16 30
b
Gate Charge Characteristics
Qg Total Gate Charge 12 21 30
VDS=50V, VGS=10V,
Qgs Gate-Source Charge 3.4 4.9 6.4 nC
IDS=5A
Q gd Gate-Drain Charge 2.9 5.8 8.7
Note a : Pulse test ; pulse width£300ms, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.4 - March, 2014
APM1105NU ®

Typical Operating Characteristics

Power Dissipation Drain Current

70 18

60
15

50

ID - Drain Current (A)

12
Ptot - Power (W)

40
9
30

6
20

3
10
o o
TC=25 C TC=25 C,V G=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 2
Normalized Transient Thermal Resistance

100
1 Duty = 0.5

0.2
it
im
ID - Drain Current (A)

)L

10 300ms
0.1
on
s(

1ms
Rd

10ms 0.05
100ms
1 1s 0.02
0.1
DC
0.01

0.1 Single Pulse

2
Mounted on 1in pad
O o
TC=25 C RqJA :50 C/W
0.01 0.01
0.01 0.1 1 10 100 500 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ã Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com

Rev. A.4 - March, 2014
APM1105NU ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

20 220
VGS=6,7,8,9,10V
18 5.5V 200

RDS(ON) - On - Resistance (mW)

16 180 VGS=4.5V

14 160
ID - Drain Current (A)

12 5V 140

10 120

100 VGS=10V
8
4.5V
6 80

4 60
4V
2 40
3.5V
0 20
0 1 2 3 4 5 0 4 8 12 16 20

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

200 1.6
IDS=5A IDS=250 mA
180
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mW)

160
1.2

140
1.0
120
0.8
100

0.6
80

60 0.4

40 0.2
3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.4 - March, 2014
APM1105NU ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

3.0 20
V GS = 10V
IDS = 5A 10
2.5
Normalized On Resistance

IS - Source Current (A)

o
2.0 Tj=150 C

1.5 o
Tj=25 C
1

1.0

0.5

o
RON@Tj=25 C: 80mW
0.0 0.1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1400 10
Frequency=1MHz VDS=50V
9 IDS=5A
1200
8
VGS - Gate-source Voltage (V)

1000 Ciss 7
C - Capacitance (pF)

6
800
5
600
4

400 3

2
200
Coss 1
Crss
0 0
0 5 10 15 20 25 30 35 40 0 3 6 9 12 15 18 21

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ã Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com

Rev. A.4 - March, 2014
APM1105NU ®

Avalanche Test Circuit and Waveforms

VDS VDSX(SUS)
L tp

VDS
DUT
IAS

RG
VDD
VDD
EAS
tp IL
0.01W
tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

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Rev. A.4 - March, 2014
APM1105NU ®

Package Information
TO-252-3

E A
c2 E1
b3

L3

D1
D

H
L4

c
b e
SEE VIEW A
0

GAUGE PLANE SEATING PLANE

L
A1
0.25

VIEW A

S TO-252-3 RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX. 6.25 MIN.
A 2.18 2.39 0.086 0.094
A1 0.13 0.005
b 0.50 0.89 0.020 0.035
b3 4.95 5.46 0.195 0.215 6.8 MIN.
c 0.46 0.61 0.018 0.024
c2 0.46 0.89 0.018 0.035
D 5.33 6.22 0.210 0.245 6.6
D1 4.57 6.00 0.180 0.236
E 6.35 6.73 0.250 0.265
E1 3.81 6.00 0.150 0.236 3 MIN.
e 2.29 BSC 0.090 BSC
H 9.40 10.41 0.370 0.410 2.286
L 0.90 1.78 0.035 0.070
1.5 MIN.
L3 0.89 2.03 0.035 0.080
4.572
L4 1.02 0.040
0 0° 8° 0° 8° UNIT: mm
Note : Follow JEDEC TO-252 .

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Rev. A.4 - March, 2014
APM1105NU ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
330.0± 16.4+2.00 13.0+0.50
50 MIN. 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
2.00 -0.00 -0.20
TO-252-3 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10 0.6+0.00 6.80±0.20 10.40±
4.0±0.10 8.0±0.10 2.0±0.05 1.5 MIN. 2.50±0.20
-0.00 -0.40 0.20
(mm)

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Rev. A.4 - March, 2014
APM1105NU ®

Taping Direction Information

TO-252-3

USER DIRECTION OF FEED

Classification Profile

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Rev. A.4 - March, 2014
APM1105NU ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.4 - March, 2014