EPC9062 QSG
EPC9062 QSG
EPC9062 QSG
EPC9062
Quick Start Guide
100 V Half-bridge with Gate Drive, Using EPC2032
Revision 2.0
QUICK START GUIDE EPC9062
DESCRIPTION
The EPC9062 development board is a 100 V maximum device voltage, Table 1: Performance Summary (TA = 25°C) EPC9062
20|A maximum output current, half bridge with onboard gate drives, Symbol Parameter Conditions Min Max Units
featuring the EPC2032 enhancement mode (eGaN®) field effect
VDD Gate Drive Input Supply Range 7.5 12 V
transistor (FET). The purpose of this development board is to simplify the
evaluation process of the EPC2032 eGaN FET by including all the critical VIN Bus Input Voltage Range(1) 80 V
components on a single board that can be easily connected into the IOUT Switch Node Output Current (2) 20 A
majority of existing converter topologies. PWM Logic Input Voltage Input ‘High’ 3.5 5.5 V
VPWM Threshold Input ‘Low’ 0 1.5 V
The EPC9062 development board measures 2” x 2” and contains Minimum ‘High’ State Input VPWM rise and
50 ns
two EPC2032 eGaN FETs in a half bridge configuration with the uPI Pulse Width fall time < 10ns
Semiconductor uP1966A gate driver. The board also contains all critical Minimum ‘Low’ State Input Pulse VPWM rise and
200 ns
components and the layout supports optimal switching performance. Width (3) fall time < 10ns
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing
There are also various probe points to facilitate simple waveform must be kept under 100 V for EPC2032.
measurement and efficiency calculation. A block diagram of the circuit (2) Maximum current depends on die temperature – actual maximum current is affected
is given in figure 1. by switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
For more information on the EPC2032 please refer to the datasheet
available from EPC at www.epc-co.com. The datasheet should be read in
conjunction with this quick start guide.
Level shift
DC
provided off board. Anti-parallel diodes can also be installed output
using the additional pads on the right side of the EPC2032 Logic and
FETs. PWM dead-time CBypass Cout
adjust
2. With power off, connect the input power supply bus to VOUT Q2
(J9, Pin-1) and ground / return to GND (J9, Pin-2), or externally GND PGND
across the capacitor if the inductor L1 and Cout are provided Gate driver
externally. Connect the output voltage (labeled as VIN, J5, J6)
to your circuit as required, e.g., resistive load. Figure 1: Block diagram of EPC9062 development board
3. With power off, connect the gate drive supply to VDD (J1,
Pin-1) and ground return to GND (J1, Pin-2 indicated on the Optional anti-
bottom side of the board). 7.5 – 12 VDC
parallel diodes Output Inductor
4. With power off, connect the input PWM control signal to
PWM1 (J2, Pin-1) and ground return to any of GND J2 pins
+
indicated on the bottom side of the board. Note that the
VDD supply
bottom FET gate drive signal is inverted with regard to (Note polarity)
PWM1. It is also possible to use separate input PWM signals VMain supply
(Note polarity)
by removing R2 and R17 and installing 0 Ω jumpers for R14
and R16.
+
5. Turn on the gate drive supply – make sure the supply is 80 VDCmax
between 7.5 V and 12 V.
Dead-time adjust
6. Turn on the controller / PWM input source.
7. Making sure the output is not open circuit, and the input Control
supply voltage is initially 0 V, turn on the power and slowly signal
inputs
increase the voltage to the required value (do not exceed
the absolute maximum voltage). Probe switching node to
Output Capacitor
see switching operation. DC load
8. Once operational, adjust the PWM control, bus voltage, and Figure 2: Buck configuration
load within the operating range and observe the output
switching behavior, efficiency and other parameters. Optional anti-
Observe device temperature for operational limits. 7.5 – 12 VDC
parallel diodes Input Inductor
9. For shutdown, please follow steps in reverse. +
VDD supply
(Note polarity)
DC load
80 VDCmax
Dead-time adjust
Control
signal
inputs
(Note polarity)
Figure 3: Boost configuration
THERMAL CONSIDERATIONS
The EPC9062 development board showcases the Voltage measurement:
EPC2032 eGaN FET. The EPC9062 is intended for Input voltage for Buck,
Q1 gate MMCX Output voltage for Boost
bench evaluation with low ambient temperature (HIGH VOLTAGE!) (HIGH VOLTAGE!)
and convection cooling. The addition of heat-sinking
and forced air cooling can significantly increase
the current rating of these devices, but care must Q1 gate MMCX V
be taken to not exceed the absolute maximum die Switch-node
temperature of 150° C. output
NOTE. The EPC9062 development board does not have any
current or thermal protection on board. For more information
regarding the thermal performance of EPC eGaN FETs, please
consult: Switch-node oscilloscope probe
D. Reusch and J. Glaser, DC-DC Converter Handbook, a
supplement to GaN Transistors for Efficient Power Conversion, Q2 gate Ground oscilloscope probe
First Edition, Power Conversion Publications, 2015. Ground
Figure 4: Measurement top side
MEASUREMENT CONSIDERATIONS
When measuring the high frequency content switch
node, care must be taken to provide an accurate high
speed measurement. An optional two pin header
(J10) is included for switch node measurement. Switch-node oscilloscope probe
MMCX connector footprint is also provided (J15 in Ground oscilloscope probe
figure 5) to measure switch node.
Low-side gate voltage (VGS2) can be measured at
the two pin header (J22) or the MMCX (J12). Please
refer to figure 4. R7 (0 Ohm resistor) will need to be
installed.
High-side gate voltage (VGS1) can only be measured
using the MMCX connector (J11). Please refer to Switch-node MMCX
figure 4. R6 (0 Ohm resistor) will need to be installed.
Differential probe is recommended for measuring
high-side gate. IsoVu probes from Tektronix has
mating MMCX connector. Figure 5: Measurement bottom side
For regulator passive voltage probes (e.g. TPP1000)
measuring low-side gate or switch node using
MMCX connector, probe adaptor is available. PN: 10%-90% rise time 90%-10% fall time
206-0663-xx.
8 V/div 5 ns/div
NOTE. For information about measurement techniques, tr = 3.6 ns tf = 2.9 ns
the EPC website offers: “AN023 Accurately Measuring
High Speed GaN Transistors” and the How to GaN
educational video series, including: HTG09- Measurement
Optional Components
Item Qty Reference Part Description Manufacturer Part Number
1 1 Cout TBD Generic Generic
2 1 L1 TBD Generic Generic
3 3 R10, R14, R16 Resistor, 0 Ω, 1/10 W Stackpole RMCF0603ZT0R00
4 2 R6, R7 Resistor, 0.0 Ω, 1/16 W Stackpole RMCF0402ZT0R00
5 1 R18 Resistor, 4.7 Ω, 5%, 1/10 W Panasonic ERJ-2GEJ4R7X
6 3 J11, J12, J15 MMCX Connector Jack Molex 734152063
7 1 J9 7.62 mm Euro Term. Würth 691216410002
8 2 P1, P2 Trimmer, 1 kΩ, 1/4 W Murata PV37W102C01B00
9 1 D3 Schottky Diode, 40 V, 300 mA ST BAT54KFILM
10 2 D7, D8 Schottky Diode, 100 V, 2 A Vishay SS2PH10-M3
11 1 J10 Connector, .1" Male Vert. Würth 61300211121
GND
2
1 0Ω
C4 C11
.1" Male Vert. C10 1 μF, 25 V Int. Regulator 1 μF, 25 V
1 μF, 25 V
EPC2038 VIN
100 V, 2800 mΩ VIN VIN VIN
Q3
R18
VCC 1 2 5VHS1 C27 C28 C29 C30 C31
4.7 Ω C26 C32 C33 220 nF, 220 nF, 220 nF, 220 nF, 220 nF,
C12 EMPTY D4 1 μF, 220 nF, 220 nF, 100 V 100 V 100 V 100 V 100 V
VCC CD0603-Z5V1 100 V 100 V 100 V
R4 100 nF, 16 V Gbtst 5V1, 150 mW
1 2
U4 TBD VSW
NC7SZ08L6X
R17 Deadtime Upper D5
PWM1 0Ω Synchronous Boostrap Power Supply
A P1 EMPTY SDM03U40 Main Supply Input
1 2 HIN 40 V, 30 mA
Y
B 4.7 V J5
VCC TP2
4
3
2
1
1
C14 C15 R24 R6 VIN
C5 27 k 0Ω
100 nF, 25 V 100 nF, 16 V J11
22 nF, 25 V VG1 EMPTY
2
D1 1
VSW 2
SDM03U40
1
2
3
4
1
PWM1 1 R16 2 D8
EMPTY J6
R25 D6 100 V, 2 A
0Ω
EMPTY
20 Ω SDM03U40 MMCX SS2PH10-M3 J3
40 V, 30 mA EMPTY
vGS1 probe adapter
4
3
2
1
2
Direct Drive
Q1
VG1 EPC2032 SW Output
VG2
C9
VCC 0.1 μF, 25 V
1
2
3
4
U2
R5
1 2 5VHS1 VSW J4
TBD L1 TBD VOUT
R19 2.7 Ω VSW
U1 R2 Deadtime Lower D3
VG1 Sync Buck Output
PWM1 NC7SZ00L6X 0Ω 40 V, 300 mA EMPTY
A P2 EMPTY R20 0.5 Ω
1 2 LIN BAT54KFILM VOUT
HIN VSW
EMPTY D7 VOUT J9
B
4.7 V VCC Q2 100 V, 2 A 1
VCC EPC2032 SS2PH10-M3 2
R21 2.7 Ω VG2
EMPTY
C6 R9 7.62 mm Euro Term.
LIN VG2 Cout
100 nF, 25 V EMPTY
R22 0.5 Ω C20 0Ω TBD
D2 C16 C17 4.7 μF, 10 V
4.7 V 100 V, 2 A
SDM03U40
J7
uP1966A
PWM2 1 R14 2 100 pF, 50 V 100 pF, 50 V
4
3
2
1
0Ω J22
EMPTY 2
1 GND
Direct Drive
.1" Male Vert.
R7
1
2
3
1
4
0Ω
J2 EMPTY J12 TP1 J8
.1" Male Vert. VG2
1
PWM1
PWM1 2 vSW probe adapter
1 J10
2
3
EMPTY VSW
2 MMCX
1
PWM2 1
4 R1 MMCX VSW
J15
10 k vGS2 probe EMPTY 1
2
adapter vSW probe holes
2
EMPTY
PWM2
1
R15
10 k
2
EPC9062
Figure 7: EPC9062 schematic
| 6
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